TECHNICAL DATA

P-CHANNEL J-FET
Qualified per MIL-PRF-19500/295 Devices 2N2608 Qualified Level JAN

ABSOLUTE MAXIMUM RATINGS (TA = +250C unless otherwise noted) Parameters / Test Conditions Symbol Value
Gate-Source Voltage Power Dissipation (1) TA = +250C Operating Junction & Storage Temperature Range (1) Derate linearly 1.71 mW/0C for TA > +250C. VGSS PD Top, Tstg 30 300 -65 to +200

Units
V mW 0 C TO-18 (TO-206AA)
*See appendix A for package outline

ELECTRICAL CHARACTERISTICS (TA = +250C unless otherwise noted)

PARAMETERS / TEST CONDITIONS Gate-Source Breakdown Voltage VDS = 0, IG = 1.0 Adc Gate Reverse Current VDS = 0, VGS = 30 Vdc VDS = 0, VGS = 15 Vdc Drain Current VGS = 0, VDS = 5.0 Vdc Gate-Source Cutoff Voltage VDS = 5.0 V, ID = 1.0 Adc Magnitude of Small-Signal, Common-Source Short-Circuit Forward Transfer Admittance VGS = 0, VDS = 5.0 Vdc, f = 1.0 kHz Small-Signal, Common-Source Short-Circuit Input Capacitance VGS = 0, VDS = 5.0 Vdc, f = 1.0 MHz Common-Source Spot Noise Figure VGS = 0, VDS = 5.0 Vdc, f = 1.0 kHz BW = 16%, RG = 1.0 megohms, egen = 1.82 mVdc, RL = 470 Symbol V(BR)GSS IGSS Min. 30 10 7.5 -1.0 0.75 -5.0 6.0 Max. Units Vdc Adc

IDDSS VGS(off) Yfs2 Ciss

mAdc Vdc mho pF

1,000

4,500 10

NF

3.0

dB

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