EE 221

Problem 1

Problem Set 8
A symmetrical p + n p + Si bipolar transistor has the following properties: Emitter Base
A = 104 cm 2 Wb = 1 m N a = 1017 N d = 1015 cm 3

n = 0.1 s p = 10 s p = 200 n = 1300cm 2 V s n = 700 p = 450

a) Calculate the saturation current I ES = I CS b) With VEB = 0.3V and VCB = 40V , calculate the base current I B , assuming perfect emitter injection efficiency. c) Calculate the emitter injection efficiency and the amplification factor , assuming the emitter region is long compared to Ln . Solution:

Problem 2

A Si p-n-p transistor has the following properties at room temperature: n = p = 0.1 s

Dn = D p = 10 cm 2 s

N E = 1019 cm3 = emitter concentration

N B = 1016 cm 3 = base concentration N C = 1016 cm 3 = collector concentration WE = emitter Width = 3 m W = metallurgical base width = 15 m = distance between base-emitter junction and base-collector junction A = cross-sectional area = 105 cm 2 Calculate the neutral base width Wb for VCB = 0 and VEB = 0.2V , repeat for 0.6V

Solution:

For the given p-n-p transistor, calculate the neutral base width Wb

Problem 3:

A Si p-n-p BJT has the following parameters at room temperature.

Emitter Base Collector 18 3 16 N a = 5 10 cm N d = 10 N a = 1015 n = 0.1 s p = 25 n = 2 2 n = 150 cm V s n = 1500 n = 1500 p = 100 cm 2 V s p = 400 p = 450 Base width, Wb = 0.2 m Area = 104 cm 2 Calculate the of the transistor form B and , and using the charge control model. Comment on the results. For the given Si p-n-p BJT, Calculate the of the transistor in terms of B and , and using the charge control model. Comment on the results.

Solution:

Problem 4:

Three n-p-n transistors are identical except that transistor #2 has a base region twice as long as transistor #1, and transistor #3 has a base region doped twice as heavily as transistor #1. All other dopings and lengths are identical for the three transistors. Which transistors have the largest value of each parameter listed below? Give clear mathematical reasons for each of your answers. a) Emitter injection efficiency. b) Base transport factor. c) Punch through voltage. d) Collector junction capacitance with VCB reverse biased at 10V . e) Common emitter current gain.
1 2 3

W
n p n

2W

N a = N1

N1

2 N1

Solution: