The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group. Transistor and Diode Data Book for Design Engineers TEXAS INSTRUMENTS INCORPORATEDTYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY TRANSISTOR DATA SHEETS TRANSISTOR CHIP CHARACTERIZATION TRANSISTOR QUALITY AND RELIABILITY INFORMATION DIODE PRODUCT SPECTRUM DIODE SELECTION GUIDES DIODE INTERCHANGEABILITY DIODE DATA SHEETS. SENSISTORS®nasa 17 weer Ox, See 11, AASIAUEET: wma, 4 Tone Pond Ra, Wal OCs Sete 1g 240 cage Meee SE lh ASSSURSEET nod. me Popreead ia) an ACS RA Ah 9 ener yh ne. poe me orcs a es BP ae rat mero te 03 view ne, a es Sais 202. 7615 Mee gneone tenveran, 10700 SW. Beaverton Hr. Suis ‘Ridge. Ave. Sute ee eae Seta AE oly ‘565, Beaverton. OR 97005, ($85) 643-8799, its ‘cee a sa MO 2g Se SRE Roe acer runes 268 aman 28pm Ea a = ae ec ena, ny nha c¢ MAB, WoC, ton iy Tear on iz ean 2,08 rh Ste 2s, MP MER, em, WE Ste See etre nae terete # ra Sree trary Sie Soe seston ao a bt tet oe Sg, Mozneu, An Seance has, omen Sane ater Ci ai ee onic, tors ns, enna eee enter Sg dre Pea ae Se sneer, tas ermane spein . en, tao ND: Maren 82730 Beer auts Panumaricans Oem freuate. ane. Ovnmar 02-9170 ae eee ere eee se Fg 0 ant. aa Pd si seam wae aan it ahi Py ee Ce Bis Kine ate me sera ROE tam ut, Sem Jess apne 6: amas 88,12 f Stsiattgogaimens Se ae —— Sheree ae anager a wernstrepasntane EPR Ta SE AESMCSE wem mnin, racet i rs ng hese te amano se Texas INSTRUMENTS Pomin USA INCORPORATEDThe Transistor and Diode Data Book for Design Engineers First Edition TEXAS © INCORPORATEDIMPORTANT NOTICES. ‘Texas Instruments ceserves the right to make changes at any time Im order to improve design snd to supply the best product TH cannot assume any responsibilty for any elteuits shown oF ceprecent that they ar foe from patent infengoment. Copyriht © 1973 “Texas Instruments Incorporated “Third Printing‘THE TRANSISTOR AND DIODE DATA BOOK ‘Since 1964, when Texas Instruments introduced the first silicon transistor to the marketplace, and later with the invention of ‘the integrated circuit, TI has boon pre-eminent in the semiconductor industry. New semiconductor products are introduced almost daily; new applications for semiconductor products are being found or comtemplated at an ever-increasing rate, especially in the consumer and automotive fields. It is a difficult task for the ‘equipment detign engineer to stay abreast of all of the discrete and integrated-circuit products available to him in his efforts 10 choose the best device at the optimum cost effectiveness. It is the aim of Texas Instruments to provide the design engineer with the maximum amount of accurate product data organized in such a manner that the pertinent data may be located in ‘the least amount of time. ‘Due to the amount of data involved, it would be inconvenient to present TI's complete fine of standard discrete products in a single volume. TI's broad line of power products are described in The Power Semiconductor Data Book for Design Engineers, First Edition (CC-404); optoelectronic products are presented in The Optoelectronics Data Book for Design Engineers, First Edition (CC-405). For ease of reference, all current devices listed in those two volumes are contained in the Type Number Index (Section 0) herein. This 1248-page volume is designed to complement those two volumes and essentially eomplete the current description of TI's line of discrete semiconductors by adding all low-power silicon transistors and diodes. (Generally, “low-power denotes fre.air power dissipation of one watt or les.) This volume contains over 800 silicon transistor types (grown-junction, multijunction, unijunction, and fiekd-ffect transistors) and over 500 silicon diode types (switching, rectifying, voltage-regulating, voltage-variable-capacitance, and ‘general purpose diodes as well as multieloment diode arrays and matrices), over 150 of which are being announced for the first time. Although this volume offers specification and interchangesbility data only for low-power silicon transistors and diodes, ‘complete technical information for all TI semiconductor products is available from your nearest TI field-sles office, local authorized TI distributor, or by writing direct to: Marketing and Information Services, Texas Instruments Incorporated, P.O. Box 5012, Dallas, Texas 75222. We hope that you will find The Transistor and Diode Data Book for Design Engineers a useful addition to your technical Wibrary.Type Number IndexTYPENO. ——-SEC.PAGE wast 104 ase, 102 NASA, 102 1nas7 102 14574, 102 ase. 102 asa, 102 1489 102 INABA, 102 asi 102 rasta 102 wasz 102 14524 102 aes 102 asa 102 aca 102 Nasa 102 nae 102 Nae 102 1ae28 102 as, 102 NASA 102 1Nas38 102 1Nao4 102 INABA 102 aNaoKB, 102 Naas. 102 1NABBA 102 1aese 102 Nes 108 1Ne26. 106 Nez? 108 16628, 108 ieee eee 108 roe, 107 wees, 108 NASA, 108 rN, 108 wos 108 rN, 108 1Ne40. 108 1850, 108 1Ne50. 108 1681 108 wes2 10.10 ess, 10.10 702 see 1011 17020 roa w703 rom 17034, 101 TYPE NO. 1704 7044, 1N705 17054, 1708 17084, 1707 1707, 16708, 17008, 1700 7004, AN710 17108, wm ITA, wiz 1N712, ree aN7I3A wre ANT wns, A715 N76 ANTI6A 1N717 aNTv7A aN718 AN7108 w719 7198 1720 17208, aw77 7218 wr ww7zA, 1723 A738 1728 17244, 1725, IN725A 1726, 1726 N76, 17488, 1w7a7 w747, Texas INSTRUMENTS SEC.PAGE 10.11 tor +. toa ron tor ton 101 tot 1019 1013 1013 10.13 10.13 10.413 1013 10.13 10.13 2. 1093, 2+ 1043, 1013 10.13 10.13 10.13 10.413 1013 1013 1013 10.13 1013 1013 1013 1013 1013 10413 10.13 1013 1013 1013, 1013 1013 1013 1013 1013 1013 1013, 10.13 10.16 1015 10415 1015 INCORPORATED. TYPE NUMBER INDEX ‘TYPE NO. 1N748 1N74BA ang 1N7ABA N70 1N7608, 1N781 A761 i782 1N752A 1N783 N75 sn7s4 1N7848, 1N755, AN786A AN786 1N756A 1787 17574, 1N788, 1753, 1789 7894, 1761 1762 w7ea 1764 785, 1766 wie7 1768 760 Nove worn, words, awo1s, so16 1NO16A N91 1No17 wos7 1NOB7A 1wo578 Noss 1NOSBA noses Noo 1N96OA. os08 SEC.PAGE 1046 10.16 1015 1015, 1015, 10418 10158 1018, 1018 1048, 1045 10.15 1015 1018 1015, 10-16 1015 1045 1015 10.15 10.18 10415 1018 10.16 1017 1017 10.17 1017 10.17 10.17 107 1017 1017 1019 10.19 1019 1019 1019 1019 10.19 1019 10.72 107 1022 102 1022 1022 102 1022 1022 1TYPE NUMBER INDEX TYPENO. ——SEC.PAGE TVPENO. —SEC-PAGE TYPENO. ——SEC.PAGE 1960 1022 13070 + 1028 Tecenonae 10.46 tNge0A . 1022 tnssog =. 2... 10.30 ywasse |... 10.88 tugeos 2... 10:22 awaso?... . . 1030 rwas08 10.48 eel eee 1072 wages 2... 1030 sas07 1048, ANDBIA 02 13500. 1030 wwao0e 1048, 1Nge18 1072 wwasio |... 1090 wwarz7 10-80 twoez 2... 1022 wast... . . 1030 ine 2... 1082 aNe2A 22... 1072 wasi2 2... 1030 waren... 1082 19628 1022 13513 1030 wane... 1082 toes 2... 1022 wwasa.. . . 1030 INa7A |... 1082 N063A 102 1N3615 1030 wwa7o.. . . . 10862 1Noe38 + 1022 13516 ++ 1030 1Na7a0q |... 10.82 tneee 2... 1022 1na517 2... 1030 wast. 2... 1082 tngeaa |... 1022 waste. 5... 1030 INABA... 1082 tngeas 2... 10:22 wasia 2... 1090 wnaraz 2... 1082 woes. soz was20 =. . 1090 INA7QA 1082 1NOBBA |... 1022 was21. |... 1030 a Noes 1022 1N2622 1030 NA733A 10.82 ines 52... 1022 wasza .... . 1090 inaraa 1082 19684, 1022 wss2e =... 1030 INSTA... 1082 tngess 2... 1022 13525... 1090 1Na7a5 1082 1Noe7 2... 10:22 13526. 2... 1030 INATISA .. 1052 1N967A, 102 13627 1030 ana7os 1082 1wo67B 2... 1022 1N3s28 =... 1090 iNa7a6A. 1062 twos 2... 1022 iwas29 6... 1030 nara? 2 1082 ANoBA. .. . . 1022 3590 =. 1030 tna7a7A 10.62 wwoess |... 1022 ‘wwaoot 1032 wNa7s8.. . . 1082 twos 6... . 1022 anaooz =. . - 10.32 ina73aa 1082 1NooA... . . 1072 wana. 2. . 1032 ina7zo... . . 1082 qwoes oo. . 1022 ‘Na008 +. 1032 ANGT29R + 1052 970 1022 anaoos =... 10.32 inamao... 1082 INo70A |... 1022 waoos 2... 1032 1na7aon, 1082 iNo708 |... 1022 164007 + tos2 anamat o.. . 1082 wort 1022 anaes 10:4 iNazsia 1082 INOTIA . 2... 1022 a 1038 nave +. 1082 1No718 2s 1022 1Nats0 1038 aNava2a. |. 1082 anor. t07 wast oo... 1038 rwaTas 1082 INBZA |... 1022 anatsz 2... 1038 1wa743a, + 1082 19728 < + 1072 1Nats3, 1038 ina7aa 2 1082 1No73 ss. 1022 wate 1098 1wa7aaa, 1052 INOTBA 1022 164305, 1040 inaas.. . . 1082 19738, 1022 tnaaaa 2... 10640 ANATAGA 10-52 ina 5... 1028 wae 2... 1042 imams 2... 1082 IN20608 2... 1028 waaay 2... 1042 inavasa 1082 12070 1024 iwasas 2... 1042 tava? 10.82 IN2070A .. 1028 wna... 1042 INaza7A 1082 12071 1024 Naas 1044 wwavaao.. 1082 iN2o7”A ss. 10-08 wNasay 1048 inavaaa 10.82 12175. ‘orro. awesz2 1048 wavag.... . 1082 tnaces 2... 1028 Nasa 1046 inavaga 10.52 | OF O--Rater to The Optosisetronict Date Book for Deion Engineer, First Edition (CC-408). TEXAS, INSTRUMENTSTYPENO. ——-SEC.PAGE. 1Na760 1082 Na7eOA 1082 we7sy 2... 1082 NATTA 1082 wera s082 1NA7E28 r08 1Neoa8 1086 15228 1086 1152288 1086 1Ns2768 1086 1wez7.... 1086 1NS227A 1086 152278 1088 1nsz28 1088 NS22BA 1086 1N5z288 1088 wsz 2... 1086 1N5Z20A 1088 152298 1086 1Ne20 1086. 11N5Z30A 1058 152308 1086 wwezat 1086 ANE2aNA 1088 wean 1088 snsza2 1088 NSZ328 1086 1wsza28 1086 1Ns33 1086 N5230A 1088 152308 1086 wwezs ..... 1086. INGZMA .... 1088 N63, 1088 1NBZ5.. . . 1088, 1NSZ35A 1088 1N52368 1086 15236 1086 1152968 1086 152368 1086 1Ne237 1088 NB2a7A 1088 1N2a78 1088 1533 1086. NSZaaA 1086 e288, 1088 ansz30 10856 152208 1086 1N52008 1088 1N5240 1086 TYPENO. ——-SEC.PAGE 5240, 10-66 ‘We2408 1056 Ns241 10.86 Neat 1086 e218 1056 tws242 10.56 ‘52420 1056 152478 1086 rns243 1086 N23 1056 152438 1086 s2ea 10.86 1ws244a 10.56 tNszean 1086 wea 10.56 15245, 1056 weiss... 10-86 wee 22. 10866 152464, 1086 1Ns2468 1086 152407 1086 152474, 1086 182478 10.56 rez 10868 e240, 1056 nszaaa 1056 ts249 1086 152494, 1086 182408 10856 15250 1056 1N5750A, r086 182608 10868 wszst 1056 inszsta 1086 52518 1086 15252 10856 152528, 1086 1652528 1086 165253 1086 15253, 1086 1N52598 1086 IWS254 1086 1Ns754A, 1086 1652548 1086 1N8255, 1056 ‘INS2S5A 1086 1N52558 1086 ‘Ns256 1086 1N5256A, 10.56 sns2s68 1086 “Not snown in thie data book but sl avaliable from Taxes ineuments. (QPTOW Rafer to The Optowectronics Deee Soak for Design Enginear, Fst Edition (CC-405). POWER Refer to The Power Semiconductor Data Book for Oetign Cpnears Fl m (66-404), TEXAS, INSTRUMENTS TYPE NUMBER INDEX TYPE No. sws2s7 NS287A 11052578 ans722 e723 ws726 15725 15768 15760 ws770 ws771 ws772 1Ns772 ws774 aNs778 2nn17 2Nt18 2Ntiea 2Nt19 2N120 2N243 2N2ae 2N263 2N264 2Naa2 2Na33 SEc.PAGE 1086 1086 1056 orto opto. orto orto. ogTYPE NUMBER INDEX weno. stc.race se0-PAge TWENO, —SEC.#AGE asa... 420 Lee POWER anit owen Go anon 420 Power aia ||| POWER 2anaoae > 420 LID) rower autrza rower 2N4o0 420 rower anima romeR anaoan 222)! 22 power ania... | POWER aason | L111 power 2N17204 * poweR N40? anioson ||| power auras... | POWER Nave auinat at ania... an 2Nsas : aNiiaz act 2Ni00 on aun ania a anes 1...) aa ans : auiiso .. 469 antes |||. rowen zee |... POWER aniist a3 auiea7 ||.) POWER anes? rowen anise 0a 2aNie73 ne 2008 an ais |. | 46a 2ani074 “0 moor || ans aes aNt975 a anos 225 Lil aes ana060 |... as anon 1...) 42s LT aes 2vat02 493 any 1... aa billie anaiore || 489 rr) ee znzis0 |. POWER 2N718A an : Nats rower ang... aa ao: 2N2160 496 aN7198 ant ase anata 2... 488 a1. an a8 anaiean ||| | 40 2N7208 aa oat) aNaioa 488 amas Do ase ot 2N21004 rs ana 404 a: nase age avo...) | 436 bills 2N21044 ase aes erase lille 2Na217 a 2Ne49 428 - wiz. 489 anaso 1... 438 : 2Nz218A 23 2Nost 0 vile aaai9. | 409 avesa | “40 ; : 2N22108 433 2Ne70 uaa : wuz. 499 gens 1...) aaa POWER anz201 423 2no10 aa 2 rowen 2Nza218 499 anos 1... aa L211 rower azz... |. 489 2no12 au 2 owen 2azz2A 453 2N0v7 os 212 rowen aaa... 4108 anor aaa Lill an 2N22004 ‘4105 2N029 32 Lilian aNz03 107 2800 452 2Nier1A an 2aNzat0A 2 aso? Ie. ae anier8 an 2nzz70 2N007 96 aun. 478 2N2200 : miooe | 487 ain rowen wie 1. ats zoo 1. || aso anins |. | PoweR 2N2396 ane 2anio7 roweR anne |. POWER aNz87 on auiot™a || soWeR ann? 2... POWER aumea | any auou7e PoweR anne |. roweR aves | ano aioe 1 rowen ania |. | POWER 212200 one 210404 POWER auizo ||| rowen au |) asa POWER Meter to The Power Semiconductor Date Bock tor Design Engineers, First Edition (CC-404), a4 TEXAS, INSTRUMENTSTYPE NO. 2Nza04 2N7095 2N2306 22402 2u24320 2N2889 2N2483 N24e4 2u2007 2N2408 2N2499 2N2800 2N2537 2N2528 2N2809 2v2540 202506 2n2608 ‘22608 22608 202609 20260 202640 2n2641 2n2642 2N2643 2uz6e4 2N2646 2v2647 2w2a02 202803 2v2008 22008 202006 ‘2N2807 202880 ‘anze04 ‘N20 2029040 2N2005 220050 -2N2006 2N2006A 2N2907 2N29070 2N2913 2nzo14 ‘2N2018 2N20160 POWER.Rater to The Powar Semiconductor Data Book for Design Engineers, First Editon (CC-408), SEC-PAGE 4121 ain a2 4125, 4128 an 4129 4120 4131 4131 4131 4131 4192 ata 4192 192 4196 4198 4138, 12 ava aa a3 ava TYPENO, SEC. 2N29160 2N2017 anaes. 2N2019 2N20108 2n2920 2N20208 2N2044 2N20448 2N2045 2N20458 2N2046 2N20468 2nz072 2N2073 2N2074 INDI... 2N2076 22077 2N2078 2n2079 mae 2N2068 2N2980 2nz090 2N2001 aoa 2n2902 2n2006 2naoor ‘23002 ‘2n2003 2N3008 22005 2013006 2na007 2N2008 2na012 20015 23021 2ng022 2va023 2na024 2va025 2n2026 2N0098 2wa037 23038 zac... 2wso40 TEXAS INSTRU. PAGE POWER, Power POWER POWER POWER POWER POWER PoweR POWER, POWER POWER POWER an 4175 POWER POWER POWER POWER Power POWER a7 an a1 418 401 IMENTS TYPE NUMBER INDEX VPE NO. 2na042 2va046 203045 2N2046 2us047 2N048 2n3049 23060 2N081 2va0s2 203053 2v206s 2Nt16 2na017 2naaee 2N3245, 2N3260 2Na2508 2Ns281 2N32518 2ua2s2 2N9263 2N3263 2Na266 2Na266 2na266 2N3320 N30 2N3331 2naaae 2N3947 2Naa48 2No349 2N3360 2waast uaa? 2na18 2wsaie 2n2420 2Noa21 2N3499 Naaao 2usaas anaase 2459 203460 2vaas7 2naaoe 203405 2No4esA SEC.PAGE 18 a1 4183 ag 41a 13 4185, 4185 4185 4107 199 POWER, 4-190 4.192 4.194 4.194 POWER POWER POWER POWER, POWER 4.208 4210 4210 4210 4212 az 428 ans osTYPE NUMBER INDEX 2N3870 2Na671 2N3672 2na702 23703 2Na708 2Ng705 2n3706 2na707 2N3708 2N3700 2na710 2Ng7"1 2naria 2narie 2Na7i5 2narie 2na719 2na720 2na726 2NB7248 2n3725 2Na726A 2Na734 2Na725 2na771 2na772 2Na780 POWER-Reter to The Power Semiconductor Data 800k for Delon Engineers, Fist Edition (CC-404) a7 Power 420 am 420 420 428 4250 4750 4.282 42562 472 4.264 4264 4254 4-254 4.254 POWER POWER POWER POWER POWER POWER 4286 4.256 4.256 4.256 4202 4.262 POWER Power POWER 2N3810 2noer1 2N3819 2Noa21 2Ns822 2No924 2N3829 Na TEXAS INSTRUMENTS SEC.PAGE POWER POWER POWER 4.265 4265 4267 4267 4.207 4261 4207 4267 4270 427 aan an aan aan 478 4200 Power POWER POWER POWER POWER POWER POWER POWER POWER BRERRRREEE? EERRREESSEGg2222 RERRERRREGE q G88 POWER POWER BEERETYPE NUMBER INDEX TYPENO. —SEC-PAGE TYPENO. ——_SEC-PAGE TYPENO. —_-SEC.PAGE 2NAAIBA 4345 2nso7. . . . . 4385 ‘2Ns395 POWER Dens... 0308 Neos |... 4.067 2N5306. POWER anaes... 450 2N65050 4367 2087 + POWER 2Ness2 2... 4360 2NSOG |... POWER 2NSSES |... POWER anes... 4350 2NSO61 |... POWER 2N5380 POWER zee... 4.960 26062 += POWER 25200 POWER 2365 4362 ‘2N5063 POWER 2N5007 4403 anaes 4356 2Nses 2... POWER ‘2N5308 2. 4408: INABA... 4.386 2NSOS7 POWER 2Ns00 4407 2387 4355 2vs06s POWER :2N5400 aa 2NAB57 4385 25059 POWER 2nstor aa Nees 385, N50. 437 mney a6 2NAO5EA 4355 gee) is 4371 Nea, a8 2NA350 4355, 2Ns147 POWER 2vseao 4418 2NAB5OA 4.956 anes POWER 2N6450 aa 2n4a80 4385 2NSH49 POWER 2Ns4s1 ate 2Na9608 4355, ‘2NBI50 POWER 25460 4420 2Ne961 4355 2ns151 POWER 2NsAG1 4420 NABI, 4.385 2NSIE2 POWER 2vsse2 4420 2vas01 4380 2vs183 POWER 2N5525 aan ‘aNeso2 30 Ns. POWER 2N5526 azz 2Naa03 4380 26187 POWER 2NS545 4423 2vaaoa 4389 ‘25209 4375 2N8546 4429 2N4g01 POWER 2Ns210 4378 2N8547 4423 2Ne002 POWER 2Ns219 an 2uss49 4405 ‘2Neo03 POWER 2N6220 4379 218550 427 ‘2NA904 POWER 2Ns221 acer 2usss1 an 2N4905, POWER 2Ns272 4963 25671 POWER 2Nao08 =... . POWER 2NS223 |. 4388 2NSB72 |... POWER 2Nagi3.. . . . POWER 2N525 4387 2683 POWER anasa |... POWER 7NE2B 4390 2N5684 POWER Nos... . POWER 2N8227 + 4901 2N66BS + POWER pao? 4361 2Ns241 POWER 2NS685 |. . POWER 2Nao48 4381 2Ns245 + 4303 2NS758 |. POWER 2Nao49 4381 2Ns246 + 4383 2NS780 |. |. POWER 2Na006 4363 2Ns207 4993 2N5760 POWER en en 4363 2NEMB 4.306 2N5887.... POWER ‘2Neo08 PoweR 2Nsa01 POWER 2NS86B . |... POWER mage POWER 2Ns002 POWER 2NS80 |. . POWER ‘25000 POWER 2Ns203 POWER 2NE87 . 2... POWER 2N6001 POWER 2vssaz 4307 2Ns871 POWER aNsooz . . . . . POWER 2Ns333 POWER 2NSB72. |... POWER. 205003 ++ POWER 2Nsass 4.400 2N5873 POWER 2NS003 |... POWER. 2N5350 4400 2N8874 POWER, 2NEOO POWER 2Ne960 2... 4400 28875 POWER 2NSOOS |... POWER 2nsost |)... 4.400 28876. POWER 2vs038 * POWER 2Nee2 4400 2vs877 POWER 2N8029 POWER 2NB963 |... 4400 seas POWER 2NSOS =... 4386 25364 ++ 4400 2NSBTO |... POWER meee 2. 4365 anes... POWER 2Ns@80 POWER POWER—Aeter to The Power Semiconductor Date 200k for Design Engineers, Fret Edition (C404), TUE TEXAS, INSTRUMENTSTYPE NUMBER INDEX TyreNo. —ste.Paae TreNo. _ste.Paae TPeNo. —se0-Paae antes... POWER Wen aaa aera. aa eee 2 rover gue os aaa sra00s e140 ansees |). powen ms eae? pstzeo) | 860 ame ||) | powen aye aan svaoet |) | | aos avons || poweR gun aaa AsTeQoIA | | | 4208 anseos |). owen ae ||| aan nsroona ||| | 4200 cone rower aye ll aaa ners |) | 4am aes |). || POWER moe) aso aero? || aaa aww ||) | powen sie |) aa asrawoe ||| as wet sam mito.) | aa ‘nsT2808 sam 2see0 waz aut = erases |) | zat meat tam pie 11) fase asresn 11. 4205 weosr 1). a miss aa asrasra ||| 423s avsees || am pais 2 ass asreas || 422 aere aa auitea ase prion tae vert? aa ante aa nsrosaa aa verte “= engn 2 aaa asvaes | as neva? owen aus as6 asraror aaa 2et20 rowen anisva sas rare aa 2nez70 POWER aise a6 sra709 az mez ||| rower paisea | ass nerono |. 4354 avers 11) owen miss. | 400 aera 1. aaa sears rower anes ase asraa |) 4276 vex? rowen antes ‘set perm || 428 avert rowen nice ‘ace nereeaa 1) 4are verze rower aie 67 eran a2 nets POWER aNI7 67 sro008 azn 2ves20 POWER ain eas ASrao0e ‘ama 2N0927 rower suis on sra0s m8 neta rower a0 aan fasTso06 ‘200 2ve rower awaca aan psra0%s 208 neo rower ovata “an fnsraoa? ‘ce mises rowen aN ears saa 08 ves? rowen owa0s “78 nsra029 8 nese rower aN708 oan asvaose sn anes ||| powen anor ae psa aan avon | POWER gms 1 ‘406 nsraoso 1) aan 2N6E6 «owen awa oa rast eat aneasr 2) | owen guate 1) 2) ane ssraost aan anew 1) aaar mia | am8 never 1. 43% mnewo 1) sear aa 26 asratae aa muoss 2) aas mae 98 fnsraias sa muease 2) | aaa et 08 asratas aan moos | aaa guar aoe asrea san mows | aaa asvoa || air psa |). 4a wow 0 msraowa aa aera a0 newez ue asraiea |). | 491 nsraz00 ‘aos 2vewes ae aero || 4a noveast 1. 4338 mnowe 21) aes asvarz ‘101 nsveaoa |.) | aan mwa 1 aes ase | a0 nsreaaa |) | 4oM0 POWERRefer to The Power Semiconductor Date 800k for Design Engineers, First Edition (CC-404), —— — os Texas, INSTRUMENTSTYPE NUMBER INDEX TYPENO, ——SEC.PAGE TYPENO. —SEC.PAGE TYPENO, ——_SEC.PAGE asta 6... 434d Asra028 4308 ‘r4s0 a ASSO |... 4343 astéo7 |... 4308 ifieet ee ore ASTSOSB 4360 ABT¢028 4.308 ‘rae 5 AsTsoS 4.969 AsTa029 4.306 mss st ‘ASTS008 4an asvass |... 4311 Tusa astog7 1... 4a ABTA050 asn Tass. + POWER astsi72 4373 agraoco 4311 Tus? 2... POWER AsTs200 4378 astast 2... 4311 Tus2 a ABTS210 + 4378 asrane2 aan Tae asTs219 4377 Agrsi72 «an Tweet ‘ABTS220 a3 ozrats . 450 Tues astsa21 2. 4381 ozr2218 497 Tu96 .. : ABTS223 4.395 2722188 497 T1880 ton ASTS225 |. . 4387 pera 2... 497 Test... 107 AsTs22 4.200 2T22100 497 Ti131-1136 ave27 2... 4.301 pret... 4.184 SERIES... . POWER AsTsdoo |. 41d xT... 4154 Ti151-1186 AsToM1 oad 272908 184 SERIES... . POWER ABTBA60 4420 DzrzO6A |. 4.154 TICSERIES |. POWER AsTsse1 4420 G129 107 1072 asTsasz 4420 6130 Tio, ior ABTSS50 aaa HY mow 2... 1072 ABTE561 aan 435 Tw2 2... . 1072 ASTENG 4435 #38 Two2ta 1. 1076 asten7 4438 460 W220 1076 AsTeNe 4495 Hot T2A |... 1076 asTeuo 4430 62 TMA |... 1076 ABTSA50 4439 S400 110260 1076 aersz2 |... 4380 1.8600 TiD26a 2. 1078 ATTs391 4.208 carzaz2 TWwaA ... |. 1076 ATTEOOIA |. | 4208 272905, T1D30a 2. 1076 Arse. |... 4-208 onrazaa Two3t ++ 1082 ATT5172 an 0213726 Tios2 toa ATT]... 4431 Toe, wss .... 1082 ArT6028 4431 mist T1D34 se. 1088 ABTON 7 182 35 1082 ARTAOMA . 47 1153, ws 1082 AeT3301 4706 Tis 037 C2. 1082 ABTSOIA + 4708 TH55 T1038, 1083 ABTs992 4-208 186 1039 1083 ABT3702 4250 T187 T1040 10.85 ASTa703 4750 158 we... 1088 AgTs74 6... 4782 88 we... 1085 AgT3705 2... 4282 T60 T1043, 1085 ABTSI06 4252 m7 Te 2... 1088 ABTs707 2 4288 ™m Tibi es AnaT3708 4258 W3 ol... Tir... . 1076 ASTI700 «|... 4254 Wa 2. 1069 wor 2. 1076 ABTSNIO 4254 nee 1080 ws 2... 1076 asra7i1 4254 THaSA SERIES |. POWER rio126 1076 (OPTO™ Rate 12 The Optoeiectronies Geta Seok for Design Enginers, Fire Editon (CC 406). POWERReter 1 The Pomer Suriconductor Bets Bock for Deign hginasr, Fle Calton (26-404) Ft FOFOEFTFTHEEFTE™_e_ eRe ™94eW@PN-"=’Yanm™o™m“°"5™NMmm— TEXAS INSTRUMENTSTYPE NUMBER INDEX —— TVPENO. —SEC-PAGE TYPENO, —SEC.PAGE TYPENO. —_—SEC.PAGE Twos . 2... 1076 TWPSERIES . . . POWER T8137... 4808 Tw . 2... 1076 Tis2s 2... 4497 s138 4548 wre... . 1076 i828 + 4407 Twa... 10108, TiD130 +. 1076 1827 ss 4497 Tw2 52... 10108 Tipster 1078) mis? 4890 Tw... 10105 muors2 + 1076 T1838... 4490 twat... 10107 Twos |... 1076 Tiss ce. 4601 Tw25, fs. 10107 wise... 1076 i888 4503 Twvs068 10-109 Tote 1090 THs... 4808 Tw907 ss 10.109 Tips |... 1090 Tise2A 4505 Tiv0g |... 104100 TIF... 1090 Tise3a 4.508 TIXL SERIES |. OPTO Toa 10.90 TISeA 4.505 Tue... tt TWDMoF .. . 1090 Tiseo ... . 4807 TiovoN |... 1090 170.2... 4807 TMF... 1090 873 4500 Tiowin |... 1090 vise 4.500 ipiazF 1080 TW 4500 sion +. 1080 tise. asi Tovar +. 1090 T1886 te. 45M Town + 1090 T1887 Tir |... 1090 Tiesost es ( eceie ToMaN 2... 1090 ‘Tis90m 4516 Two... 1096 Tse. . 488 woe... 1096 TisoM 1... 4516 Twsss |... 1086 mise... 4816 Twos... 1096 TWs9M 2... 4518 woes | 1098 risog.... 4516 jw 11... 1088 Tiss 1, 4818 mre ..... 1098 894 : 2. 4508 TIOMISF . 10-100 T1896 2 4518 Tomas)... 10100 Tise6 es 4518 THOMiesF . . 10:00 97 2. 4518 Tomes)... 10100 Tis03 + 4518 TWoMieaF |... 10-100 Tis. 4518 Tuomes) .. 10100 miso... | 4820 Tomes 10-100 Tision .. . . 4820 Tomiss) 10-100 718105 as THomiesF . 10:00 misiog 4-625 ThomtB6s 10-100 18109 5 4528 TwoMassF .. . . 10-100 misi10 2 4528 Tuomas)... 10100 visit... 488 Twomassr . |. 10:00 misn2 2... 4590 Tuomas)... 10:00 m1s126 4596 woMa6ar 10.100 18126 4538 Tuomasay .. . . 10100 18128 asa TuoMzesF .. . 10-100 118129 4843 tiomaes) | 10100 nnsia3 A845 TioMaseF . . . . 10-100 mista 4505, Tomes) |... 10100 T1s138, 458 Tisenles - - . oFTO rs136 4845 Dean Engineer, Fir Eaton (CC-405). lock for Design Enginaors, Fire Eaton {CC-404), TEXAS, INSTRUMENTSGlossaryINDEX General ‘Terms and Definitions ee Letter Symbols, Terms, and Definitions ‘Signal Diodes and Rectifiers Terms and Definitions Letter Symbols, Terms, and Definitions Voltage-Rogulator and Voltage-Reference Diodes Terms and Definitions Letter Symbots, Terms, and Definitions Voltage-Veriable-Capacitance Diodes ‘Terms and Definitions... « Letter Symbols, Terms, and Definitions Multijunction Transistors Terms and Definitions Letter Symbols, Terms, and Definitions Unijunction Transistors ‘Terms and Definitions Letter Symbols, Terms, and Definitions Field-Effoct Transistors ‘Terms and Definitions. - Letter Symbols, Terms, and Definitions ‘Standards Documents 1 13 7 7 12. 112 145 17 1.27 127 129 131 137GLOSSARY GENERAL —————$—$——— GLOSSARY Introduction This glossary contains letter symbols, abbreviations, terms, and definitions commonly used with semiconductor devices. ‘Most of the information was obtained from JEDEC Publication No. 77. That document has over-riding authority where any conflict may occur. GENERAL ‘Terms and Definitions Term Definition anode aren : ‘The electrode from which the forward current flows within the deviee. anode “Pp cathode ae forward current Dipolar transistor. . ‘A transistor that uilizes charge carriers of both polarities, breakdown eee ‘A phenomenon occuring in reversebiased semiconductor junetion, the initiation of whichis observed asa transition from region of high small-signal resistance to a region of substantially lower smallsignal resistance for an increasing magnitude of reverse current. ‘breakdown region : ao ‘A region of the voltampere characteristic beyond the initiation Of breakdown for an increasing magnitude of reverse current. bbreckdown voltage... + ++ + The voltage measured at a specified current in # breakdown region. (Ref MIL-S-195000 Par. 20.3) blocking ee A state of a semiconductor device or junction which essentilly pprovonts the flow of current. cathode . : +++ ++ The electrode to which the forward current flows within the device. For diagram, see “anodk electrode. oe +++ 1+ An electrical and mechanical contact to @ region of @ semi conductor device. forwardbies The bias which tends to produce current flow in the forward direction tE > current flow forward direction. : The direction of current flow which results when the etype semiconductor region is at @ positive potential relative to the type region. (Ref ISEE 263) opencircuit . . + «A cireuit in which halving the magnitude of the terminating impedance does not produce a change in the parameter being ‘measured greater than the required accuracy of the measurement, (Ref MIL-S-195000 Par. 20.8) rectifying junction. see = + A junction in a semiconductor device which exhibits asym- ‘metrical conductance, ee Texas INSTRUMENTS12 GLOSSARY GENERAL reverse bias. ee reverse direction semiconductor device semiconductor diod@ os semiconductor junction (commonly referred to as{unction) shortcireuit, 6 ee smallsignal 0 =. static value terminal... thermal resistance (steady-state) transistor Definition ‘The bias which tends to produce current flow in the reverse direction. a current flow ‘The direction of current flow which results when the rtype semiconductor region is at @ positive potential relative to the p-type region. {A device whose essential characteristics ‘of charge carriers within a semiconductor. ‘governed by the flow =. + A semiconductor device having two terminals and exhibiting & nonlinear voltage-current characteristic; in more restricted usage, 1 semiconductor device which has the asymmetrical voltage: current characteristic exemplified by a single p-n junction. (Ref IEEE 270) {A region of transition between semiconductor regions of different electrical properties (e.9., nin, p-n, ppt semiconductors), or between a metal and a semiconductor. A circuit in which doubling the magnitude of the terminating impedance does not produce a change in the parameter being measured that is greater than the required accuracy of the measurement, (Ref MIL-S-195000 Par. 20.16) [A signal which when doubled in magnitude does not produce = change in the parameter being measured that is greater than the required accuracy of the measurement. (Ref MIL-S-19500D Par. 20.17) ‘A nonvarying value or quantity measured at @ specified fixed point, or the slope of the line from the origin to the ‘operating point on the appropriate characteristic curve. (Ref IEEE 255 Par. 2.2.1) ‘An externally available point of connection to one or more electrodes, “The temperature difference between two specified points or regions divided by the power dissipation under conditions of ‘thermal equilibrium. (Ref IEEE 223) ‘The change of temperature difference berwaen two specitiod points oF regions at the end of e time interval divided by the step- funetion change in power dissipation at the beginning of the same time interval causing the change of temperature difference. (Ref IEEE 223) ‘An active semiconductor device capable of providing power ‘amplification and having three or more terminals. (Ref 1EC 147-0 Par..0-2.8) — eee Texas, INSTRUMENTSLetter Symbols, Terms, and Definitions Symbol Term For NF average noise figuret average noise factor? ForNe* spot noise figuret spot noise factort te forward current, de ba noise current, equivalent input In reverse current, de Re (formerly 8) thermal resistence Roca thermal resistance, caseto-ambient Rosa ‘thermal resistance, formerly 03.4) junetion-to-ambient Fasc ‘thermat resistance, (formerly 64.0) iunction-to-case stors21 forward transmission coefficient GLOSSARY GENERAL Definition The ratio of (1) the total output noise power within 2 designated output frequency band when the noi temperature of the input termination(s) is at the reference noise temperature, To, at all frequencies to (2) that part of (1) caused by the noise temperature of the designated signalinput termination within 2 designated signal-input frequency band, The ratio of (1) the total output noise power per unit bandwidth (spectral density) at 2 designated output frequency when the noise temperature of the input termination(s) is at the reference noise temperature, To, at all frequencies to (2) that part of (1) caused by the noise temperature of the designated signal-input termination at a designated signal-input frequency. ‘The de current that flows through @ semiconductor junetion in the forward direction. The noise current of an ideal current source (having @ source impedance equal to infinity) in parallel with ‘the input terminals of the device that, together with the equivalent input noise voltage, represents. the Noise of the device, The de current that flows through a semiconductor junction in the reverse direction Refer to thermal resistance (steady-state), page 1-2. The thermal resistance (steady-state) from the device ase 10 the ambient. ‘The thermal resistance (steady-state) from the semiconductor junction (s) to the ambient. The thermal resistance (steady-state) from the ‘semiconductor junction(s) to a stated location on the The ratio of the voltage at the output port to the voltage incident on the input port with the output Port terminated in a purely resistive reference impedance equal to the impedance of the source of ‘the incident voltage. se often uted tor symbols F and F: however, the symbole F and F are preferred. ty in decibate (8. _ Texas INSTRUMENTS INCORPORATED 13GLOSSARY GENERAL EE EEEEESEEEE Symbot Term Definition siorsi Input reflection ‘The ratio of the voltage reflected from the input port coetficient ‘to the voltage incident on the input port with the ‘output port terminated in a purely resistive reference impedance equal to the impedance of the source of the incident voltage. mee utp rfiction The rato of the voltage etlactad frm the output coat port to te voltage Inelgenton Hw output port wth the Inout port termina in a. purly rosie ference impedance must the impedance ofthe tours of te incden von. srorsi2 reverse transmission ‘The ratio of the voltage at the input port to the coefficient ‘voltage incident on the output port with the input port terminated in a purely resistive reference impedance equal to the impedance of the source of ‘the incident voltage. Ta ‘free-air temperature ‘The air temperature measured below a device, in an or environment of substantially uniform temperature, ambient temperature cooled only by natural air convection and not materially affected by reflective and radiant surfaces. (Ref MIL-S-195000 Par. 20.20.1) “The temperature measured at a specified location on the case of # device, (Ref MIL-S-19600D Por. 20.20.2) Te ‘case temperatu w virtual junction 'A temperature representing the temperature of the ‘temperature junetion(s) calculated on the basis of @ simplified ‘model of the thermal and electrical behavior of the semiconductor device. NOTE: Thie term “virtual junction temperature” is taken from IEC standards. It is particularly applicable ‘to multijunetion semiconductors and is used in publication to denote the temperature of the active semiconductor element when required in specifications and test methods, The term “virtual junction temperature” it used interchangeably with the term “junction temperature” in this publication. Tg storage temperature ‘The temperature at which the device, without any power applied, is stored. (Ref MIL-S-195000 Par, 20.20.3) i EEE 14 TEXAS, INSTRUMENTSGLOSSARY GENERAL ee Tr To cf oe Term noise temperature Symbol reference noise temperature delay time fall time ‘tum-off time ‘tum-on time Pulse time rise time storage time Definition ‘The uniform physical absolute temperature (kelvin) ‘a multiport) would have to be maintained if it (and its sources) ‘were passive in order to make available (or deliver) the same random noise power per unit bandwidth (spectral density) at a given frequency as is actually _nailable (or delivered) from the network. ‘A specified absolute temperature (kelvin) to be ‘assumed as a noise temperature at the input ports of 2 network when calculating certain noise parameters, ‘end for normalizing purposes. When the reference noise temperature is 290 K, It is considered to be the standard reference noise temperature, The time interval from the point at which the leading edge of the input pulse has reached 10 percent of ‘maximum amplitude to the point at which the leading edge of the output pulse has reached 10 percent of its maximum amplitude. (Ref MIL-$-195000 Par. 20.11) ‘The time duration during which the trailing edge of a ‘pulse is decresting from 90 to 10 percent of its maximum amplitude. (Ref MIL-S-19500D Par. 20.12) The sum of te +t. ‘The sum of ta + te. The time duration from the point on the leading edge which is 90 percent of the maximum amplitude to the point on the trailing edge which is 90 percent of the maximum amplitude. (Ref MIL-S-19500D Par. 20.15) ‘The time duration during which the leading edge of a pulse is increasing from 10 to 90 percent of its ‘maximum amplitude, (Ref MIL-S-19500 Par. 20.13) ‘The time interval from a point 90 percent of the ‘maximum amplitude on the traling edge of the input Pulse to 2 point 90 percent of the maximum ‘amplitude on the trailing edge of the output pulse. (Reef MIL-S-195000 Par. 20.14) ——————— Texas | NSTRUMENTS 15GLOSSARY GENERAL ——_—— Symbol Term Oot _ puta erage tie “The tine duration fom he point on the leading eae vihich is 6 perant ofthe maximum ampiude 10 8 point on the talng edge which Is 60 percent ofthe maximum” amoltade. (Ref MIL-S-105000 far, 20.10) | LOUTPUT PULSE 3 2 DIAGRAM ILLUSTRATING PULSE TIME SYMBOLOGY ve forward voltage, de The de voluge scrom # semiconductor junetion Associated with te flow of forward current. Va nie voltae, “Te noise voltage ofan idl voltge source (having a ecuialet input source mpadance equ 10 zoo) In saris with the input terminal ofthe device tet, together with the saulvalent input ole current, represents the nos of the doves vr revere vote, de ‘The de voltage applied to a semiconductor junction wich ceuser the current 10 flow in the reverse Section ——_— 16 TEXAS, INSTRUMENTSGLOSSARY SIGNAL DIODES AND RECTIFIERS ‘Terms and Definitions SIGNAL DIODES AND RECTIFIERS ‘Term semiconductor rectifier diode semiconductor signal diode Letter Symbols, Terms, and Definitions (For illustration of the following currents refer to diagrams on page 1-10) ‘Symbot 'E(RMS). It te TRAV). ig, IM team 'esm 'RURMS). tee te TRAV. ig IRM in(Rec). SRM(REC) ‘RRM Teen forward current {00 table, page 1-11) forward current, repetitive peak: forward current, surge peak average rectified forward current reverse current (see table, page 1-11) ceverse recovery current (see table, page 1-11), Definition ‘A semiconductor diode having an asymmetrical voltage-current characteristic, used for rectification, and including its associated ‘housing, mounting, and cooling attachments if integral with it. Graphic symbol for a semiconductor 1 semiconductor signal diode (Ref ANS 32.2): er a ‘A semiconductor diode having an asymmetrical voltage-current characteristic and used for signal detection. jer diode and For graphic symbol, see above Definition ‘The respective value of current that flows through nductor diode or rectifier diode in the forward direction. ‘The peak value of the forward current including all repetitive transient currents, ‘The maximum (peak) surge forward current having a specified waveform and @ short specified time inter: val, The value of the forward current averaged over @ full cycle of haifsine-wave operation at 60 Hz with = ‘conduction angle of 180°. ‘The respective value of current that flows through & semiconductor diode or rectifier diode in the reverse direction. The transient component of reverse current ‘associated with a change from forward conduction to reverse voltage. ‘The maximum (peak) repetitive instantaneous reverse current. ‘The maximum (peak) surge reverse current having & specified waveform and a short specified time inter- val ee TEXAS, INSTRUMENTS18 GLOSSARY SIGNAL DIODES AND RECTIFIERS EEE Symbol Term Pr. PE(AV). forward power PF. PEM dissipation (see table, page 1-11) Pre PRIAV). reverse power dissipation PR. PRM (s2e table, page 1-11) Qs stored charge Ro thermal resistance ws junction temperature tr forward recovery time pulse time te Fite time te reverse recovery time Definition ‘The power dissipation resulting from the flow of the respective forward current. ‘The power dissipation resul respective reverse current. 19 from the flow of the ‘The total amount of charge recovered from a diode ‘minus the capacitive component of that charge when. the diode is switched from a specified conductive condition to a specified non-conductive condition with other circuit conditions (as described in EIA: JEDEC Suggested Standard No, 1) optimized to recover the largest possible amount of charge. ‘See pages 1-2 and 13, ‘See page 1-4. The time required for the current or voltage to recover to @ specified value after instantaneous switching from a stated reverse voltage condition to a stated forward current or voltage condition in a given circuit. SPECIFIED RECOVERY VOLTAGE VOLTAGE [FecoveR, TiMe—— TIME: ‘Soe pages 1-5 and 1-6. See pages 1-5 and 1-6. The time required for the current or voltage to recover to a specified value after instantaneous ‘witching from a stated forward current condition to ‘a stated reverse voltage or current condition in a given circuit. SPECIFIED ‘RECOVERY ‘CURRENT TEXAS INSTRUMENTSGLOSSARY SIGNAL DIODES AND RECTIFIERS LE ‘Symbol tw vier). eR) VF(RMS). Vf. Ve. VF(AV). ve, VEM VR(RMS). Vee Ve. VAR(AV) ve. VRM VRwM VRRM Vasu Term pulse average time breakdown voltage (de, instantaneous total value) forward voltage {see table, page 1-11) reverse voltage (see table, page 1-11) working peak reverse voltage repetitive peak reverse voltage ‘nonrepetitive peak reverse voltage Definition See page 1-6. ‘The value of voltage at which breakdown occurs. ‘The voltage drop in a semiconductor diode resulting from the respective forward current. ‘The voltage applied to a semiconductor diode which ‘causes the respective current to flow in the reverse direction. ‘The maximum instantaneous value of the reverse voltage, excluding all transient voltages, which occurs ‘cross @ semiconductor rectifier diode, ‘The maximum instantanoous value of the reverse voltage, including all repetitive transient voltages but, excluding all nonrepetitive transient voltages, which ‘occurs across a semiconductor rectifier diode, ‘The maximum instantaneous value of the reverse voltage including all nonrepetitive transient voltages ‘but excluding all repetitive transient voltages, which ‘occurs across a semiconductor rectifier diode. —— TEXAS INSTRUMENTS 19GLOSSARY SIGNAL DIODES AND RECTIFIERS DIAGRAMS ILLUSTRATING SYMBOLS FOR DIODE CURRENTS AND VOLTAGES |. FORWARD CURRENT AND VOLTAGE: Maximum (peak) surge value n cenoemrrte valve Ty / L 1 —— Average sus, 180" conduction ante, Maximum (peak) tora value 60 Hr, half sine wave Saas 1eRM— Maxienuen (paBk) Trav repetitive value ‘Average valve with alternating component — eM Maximum (peak total value MW, REVERSE CURRENT AND VOLTAGE: 4 iR(AV) ~ m7 \ 'anM <= 7 Average valve with Instantaneous Meximom (paak) repetitive value Bea genaiaceeeonet Maximum (peak! total value wanna vaiavi surge value ~ cs img (peak) tots value 110 TEXAS, INSTRUMENTS | POST OFFICE ROX S012 + DALLAR, TEXAS 78222Forward Current Forward Current, Average, 180° Conduction Angle, 60-Hz, Half Sine Wave Forward Current, Repetitive Peak Forward Current, Surge Peak Reverse Current Reverse Recovery Current Forward Power Dissipation Reverse Power Dissipation Forward Voltage Reverse Voltage Reverse Voltage, Working Peak Reverse Voltage, Repetitive Peak Reverse Voltage, Nonrepetitive Peak Breakdown Voltage —— GLOSSARY SIGNAL DIODES AND RECTIFIERS -—eeo ‘TABLE OF SYMBOLS FOR CURRENT, POWER, AND VOLTAGE RAS Vas | BE Vite, [Baw Taam reat | ORY no | Sy | Mntnaneo | 4m | suacatn | teen | arnning | emt | Sta _ Component _| Component_| Component Value 'F(RMS) 7 te Te(AV) iF 'FM = = a = 'eRM - - - - - tesM IRIRMS) tr IR TRIAV) in IRM 7 _ 7 = 'R(REC) 'RM(REC) 7 7 Pe PFIAV) PF PEM ni - PR PRIAV) PR PRM VF(RMS) Ve Ve VF(AV) vF VeEM VR(RMS) ve VR VRIAV) vR VRM S S = 7 = vawm ~ - = 7 - RRM : ae - | vase = = Vier) ial MBR) 7 TEXAS INSTRUMENTSGLOSSARY VOLTAGE-REGULATOR AND VOLTAGE-REFERENCE DIODES ‘anode cathode "VOLTAGE-REGULATOR AND VOLTAGE-REFERENCE DIODES ‘Terms and Definitions voltage-reference diode voltage-regulator diode. =. Lotter Symbols, Terms, and Definitions (For illustration of the following currents and voltages refer to diagrams on page 1-13) te 'r tz, 'zK. tM u ‘Symbol ‘Torm forward current, de reverse current, de regulator current, reference current (dc, de near breakdown ki de maximurn-rated current) junetion temperature Definition “The electrode to which the reverse current flows within the device when itis biased to operate in its breakdown region. ‘The electrode from which the reverse current flows within the device when itis biased to operate in its breakdown region. ‘A diode which is normally bissed to operate in the breskdown region of its voltage-current characteristic and which develops ‘across its terminals @ reference voltage of specified accuracy, when biased to operate throughout a specified current and temperature range. (Ref IEC 147-0, Par.0-2.3) Graphic symbol for voltage-reference diode (Ref ANS Y32.2) reverse current —p> crows) Anode envelope optional ‘A diode which is normally biased to operate in the breakdown region of its voltage-current characteristic and which develops. ‘across its terminals an essentially constant voltage throughout @ specified current range. (Ref 1EC 147-0, Par. 0-2.4) Graphic symbol for voltage regulator diode. (Ref ANS Y32.2), reverse current ——te Cathode Anode ‘envelope optional Definition ‘The value of de current that flows through the diode inthe forward direction. “The value of de current that flows through the diode: inthe roverse direction. “The value of de reverse current that flows through the diode when it is biased to operate in its breakdown rogion and at a point on its voltage-current character. istic as follows: Iz: a specified operating point between 12K and tam 12x: @ specified point near the breakdown knee point based on the maximum-rated a —— TEXAS, INSTRUMENTSGLOSSARY VOLTAGE-REGULATOR AND VOLTAGE-REFERENCE DIODES ——————— Symbol Term ve forward voltage, de VR reverse voltage, de vz, ‘regulator voltage, v2M reference voltage (de, de at maximum- rated current) 2, regulator impedance, Zeke reference impedance, am (small-signal, at 12, at izk. at IZM) BREAKDOWN KNEE ‘The voltage drop in the diode, resulting from the de forward current. ‘The voltage applied to the diode which causes the de current to flow in the reverse direction. ‘The value of de voltage across the diode when itis, biased to operate in its breakdown region and at @ voltage-current characteristic 38 Vz! at Iz (see previous page) Vz: at lzm (38 previous page) ‘The small-signal impedance of the diode when it is biased to operate in fts breakdown region and at a specified point in its voltage-current characteristic 2s follows: 2g! at Iz (see previous page) 72k: at IZ (see previous page) 2zmi at IZM (see previous page) ve DIAGRAM ILLUSTRATING SYMBOLS FOR CURRENTS AND VOLTAGES e_——— Texas, INSTRUMENTS 1413GLOSSARY VOLTAGE-VARIABLE-CAPACITANCE DIODES SS \VOLTAGE-VARIABLE-CAPACITANCE DIODES ‘Terms and Definitions Term voltage-variable- ccopacitance diode (aractor diode) -wning diode Letter Symbols, Terms, and Definiti Symbol Torr ac ‘temperature coefficient of capacitance & case capacitance Gj junction capacitance ce total capacitance ca capacitance ratio ea feo cutott frequency bs series inductance " cfficiency a figure of merit 5 series resistance, ‘small-signal w junction temperature A tworter Definition minal semiconductor device in which use is mede of the property that its capacitance varies with the applied voltage. [A voltage-variable-cepacitance diode used for rf tuning. This includes functions such as automatic frequency contro! (AFC) ‘and automatic fine tuning (AFT). Definition ‘The ratio of the change in capacitance to the change in temperature. The ratio is an average value for the total temperature change, (For symbol: Ref USAS ‘Y105-1968 Par. 3.6) ‘The capacitance between the diode terminals of the ‘case with the semiconductor chip not installed or ‘with the semiconductor chip installed but not connected. ‘The small-signal capacitance between the contacts of an uninstalled semiconductor chip. The total small-signal capacitance between the diode terminals of a complete device. (Cr Ce + Cj). ‘The ratio of total capacitance at one voltage to total capacitance at another voltage. ‘The frequency at which the figure of merit Q is equal to 1 “The inductance between specified points on the diode terminals, ‘The ratio of output power to input power. ‘Two pi (2x) times the ratio of the energy stored per cycle to the energy dissipated per cycle. ‘The total smallsignal resistance between the diode ‘terminals, ‘See page 1-4. mT TEXAS, INSTRU. IMENTSGLOSSARY MULTWUNCTION TRANSISTORS ee MULTIJUNCTION TRANSISTORS rms and Definitions Term Definition bees (8) ‘A region which ties between an emitter and a collector of & junction, emitter... saturation transistor, multijunction ‘transistor and into which minority carriers are injected. (Ref. 60 IRE 28.81) = A region through which a primary flow of charge carriers leaves the base. (Ref, 60 IRE 28.51) + A-region from which charge carriers that are minority carriers in the base are injected into the base. (Ref. 60 IRE 28.$1) ‘A semiconductor junction normally biased in the reverse direction, the current through which can be controlled by the Introduction of minority carriers into the base, (Ref. 60 IRE 281) ‘A. semiconductor junction normally biased in the forward direction to inject minority carriers into the base, (Ref. 60 IRE 28.81) A base-current and a collector.current condition resulting in 2 forward:-biesed collector junction. ‘A transistor having a base and two or more junctions. ‘Typical Graphic Symbols: (Ref. ANS Y32.2) NOTE: In the graphic symbols, the envelope is optional if no element is connected to the envelope, NPA TRIODE pave TRIODE Cotctr Cotectr = €) ~€) miter Emiter NPN, DOUBLESASE PN DOUBLE-EMITTER covecter Bae Bae mc®) Emir — Emitter LY miter caitector eae 7 titer "Raterences to bane, collactor and amittar evmbolism (8, by C6, E, and a refer tothe device terminals connected to those eeplons. TEXAS, INSTRUMENTS 145GLOSSARY MULTIJUNCTION TRANSISTORS —_—_—_— Torm Definition | A PNP. thyristor that, together with two external resistors, ‘can generate @ current-voltage characteristic similar to thet of a tunijunetion transistor. The unijunction parameters n. 'BB, IP, and ty (see pages 1-27 and 1-28) can be varied by selection of 1] the values ofthe two resistors, transistor, programmable ur EMITTER, E 82 Re ANODE, Ag Interbae Resistance gp ~ RI+R2 Rt 1 Intrinsie Standot Ration = SOEs caTHODE, K > BASE 1.81 PROGRAMMABLE UNNJUNCTION CIRCUIT VaKiVesty NEGATIVE cuTorF SATURATION = —-pie- RESISTANCE —efe- = ce REG eCION Sern 10N VelVest(ea) =~ ws DIAGRAM ILLUSTRATING CURRENT-VOLTAGE CHARACTERISTIC ‘OF THE PROGRAMMABLE UNLIUNCTION CIRCUIT — 116 TEXAS, INSTRUMENTSLetter Symbols, Terms, and Definitions ‘Symbol Term Cob, interterrinal Coe, capacitance eb (collector-to-base, collector-to-emitter, emitter-to-base) open-circuit input ‘capacitance (common-base, common-emitter) Cts, short-circuit input Cies capacitance (common-base, common-emitter) Cobo. ‘open-circuit output Coco, ‘capacitance (common-base, common-emitter) capacitance (common-base, common-emitter) obs. short-circuit output Coss Ci. short-ireuit reverse Cres transfer capacitance (common-base, common-emitter) Cte, depletion iayer Cte capacitance (collector, emitter) GLOSSARY MULTIJUNCTION TRANSISTORS Definition The direct interterminal capacitance between the terminal indicated by the first subscript and the reference terminal indicated by the second subscript, with the respective junction (collector-base, collector: emitter, emitter-base) reverse-biased and. with the ing terminal (emitter, base, collector) open circuited to de, but sc-connected to the guard ‘terminal of a three-terminal bridge. ‘This capacitance includes the interelement capaci- tances plus capacitance to the shield where the shield, is connected to one of the terminals under measure- ment. ‘The capacitance measured across the input terminals (emitter and base, base and emitter) with the collector open-circvited for ac. (Ref IEEE 255) ‘The capacitance measured across the input terminals, (emitter and base, base and emitter) with the collector short-circuited to the reference terminal for 2c. (Ref IEEE 255) ‘The capacitance measured across the output terminals. (collector and base, collector and emitter) with the input open-circuited to ac. (Ref IEEE 265) ‘The capacitance measured across the output terminals, (collector and base, collector and emitter) with the third terminal shortcircuited to the reference ‘terminal for ac. (Ref IEEE 255) ‘The capacitance measured from the output terminal to the input terminal with the respective reference ‘terminal (base or emitter) and the case, (unless connected internally to another terminal) connected 10 the guard terminal of a three-terminal bridge and with the device biased into the active region. ‘The part of the capacitance across the (collector-base, emitter-base) junction that is astociated with its depletion tayer. NOTE: This capacitance is a function of the total potential difference across the depletion layer. (Ref TEC 147-0 Par. 114.8, 4.9) _—_—— TEXAS, INSTRUMENTS 147GLOSSARY MULTWUNCTION TRANSISTORS —_—_—_—<—< << —<—$—<——————— eee ‘Symbol Toren Definition FoF noise figure, average or spot See page 1.3. fnto- smattsignal short ‘The lowest frequency st which the modulss (mognk fife ciruit forward tude) of the small-signal short-circuit forward current current transfer ratio. transter ratio is 0.707 of its value at a specified low cutoff frequency frequency (usualy 1 kHz or le). (Ret IEEE 256) 1] (common-bas, common-emiter) frnax maximum frequency “The maximum frequency at which 8 transistor can be of oxilation made to oscillate under specifi conditions. NOTE: This approximates to the frequency at which the maximum available power gbin has decreased to tunity. (Ref IEC 147-0 Per. 1.4.17) tr transition frequency “The product of the madulus (magnitude) of the or common-emitter smallsignal short-circuit forward frequency st which current transfer ratio, fel, and the frequency of small signa forward toasurement when this frequency is stficiently high current transfer to that rie Is decreasing with @ slope of approx! ratio (common-emitter) mately 6 dB per octave, (Ref IEEE 255) extrapolates to unity " frequency of unity ‘The frequency at which the modulus (magnitude) of current transfer ratio ‘the common-emitter small-signal short-circuit forward current transtr ratio, Je) has decreased to unity. (Ref 1EC 147-0 Par. 1.4.19), Gps. large signa insertion ‘The ratio, usually expressed in dB, of the signe! Gre power gain (common: ower delivered to the load to the large-signal power bate, common-emitter Gelivored tothe input. Spb. small ignal insertion ‘The ratio, usually expressed in dB, of the signal Spe power gain (common- power delivered to the load to the small-signal power base, common-eritter) delivered to the input. Gre. large-signal transducer ‘The ratio, usually expressed in dB, of the signal Gre power gain (common-base, ower delivered to the load to the maximum large commorremitter) Signal power avaiable from the source. St. small signal transducer The ratio, usually expressed in dB, of the signal Gre power gein (common-base, power delivered to the load to the maximum small: commonemitte) ‘gna power available from the source. hee. static forward current ‘The ratio of the de output current to the de input bre ‘wansfer ratio (common- eureent. (Ref MIL-S-196000 Par. 30.28) base, common-emitter) ee 118 TEXAS INSTRUMENTSPootimea) or Im(hoe) hoe (real) Rethoel heb, Term smal signal short circuit forward ‘current transfer ratio (common-base, ‘common-emitter) ‘common emitter) imaginary part of the small-signal short Circuit input impedance, (common-emitter) real part of the small- signal short-circuit input impedance, (common-emitter) small-signal open- Circuit output admittance (common-base, ‘common-emitter) imaginary part ofthe smal signal open-circui output admittance, {common-emitter) teal part of the small- signal open-circuit ‘output admittance, {common-emitter) ‘small-signal open: circuit reverse voltage ‘transfer ratio (common-base, common-emitter) current, de (base-terminal, collector-terminal, emitter-terminal) ‘current, rms value of ‘alternating component (ase-terminal, collector-terminal, emitter-terminal) GLOSSARY MULTWUNCTION TRANSISTORS Definition ‘The ratio of the ac output current to the small-signal ‘2c input current with the output short-circuited to ac. (Ref MIL-S-19500D Par. 30.20) ‘The ratio of the small-signal ac input voltage to the ac input current with the output short-circuited to ac. (Ref MIL-S-19000 Par, 30.24) The ratio of the out-of-phase (imaginary) component Of the smellsignal ac base-emitter voltage to the ac base current with the collector terminal. short- circuited to the emitter terminal for ac ‘The ratio of the in-phase (real) component of the small-signal ac base-emitter voltage to the ac base ‘current with the collector terminal short-circuited to the emitter terminal for ac. ‘The ratio of the ac output current to the small-signal ‘2 output voltage applied to the output terminal, with the input opensircuited to ac. (Ref (MIL-S-195000 Par. 30.15) The ratio of the ac collector current to the outof- phase {imaginery) component of the small-signal collector-emittor voltage with the base terminal open- circuited to ae. ‘The ratio of the ac collector current to the in-phase (real) component of the small signal collector-emitter voltage with the base terminal open-crcuited to ac. ‘The ratio of the ac input voltage to the small-signal ac output voltage with the input open-circuited to ac. (Ref MIL-S-195000 Par. 30.18) ‘The value of the de current into the terminal indicated by the subscript. The rootmean-square value of alternating current into the terminal indicated by the subscript. 7—_—_——— TEXAS, INSTRUMENTSGLOSSARY MULTIJUNCTION TRANSISTORS 120 ‘Symbol cs ic. ie omcrennaring [yg gy rt at rennaring 'BEV ‘cao Term Definition ‘current, instantaneous ‘The instantaneous total value of current ito the total value terminal indicated by the subscript. (base-terrinal, collector-terminal, cemitter-terminal) axa pean i i i peg ate j ge gun DIAGRAM ILLUSTRATING SYMBOLS AND TERMS FOR CURRENTS (Ref IEEE 255) base cutoff The de current into the base terminal when current, de collector cutoff ‘The de current into the collector terminal when itis. current, de, biased in the reverse direction with respect to the ‘emitter open base terminal and the emitter terminal is open circuited. (Ret IEEE 256) ee ——————— ————— Texas, INSTRUMENTSGLOSSARY MULTWJUNCTION TRANSISTORS Symbot Ice. leer. lees. Icev. TIE 2(0ff) Heclofs) ‘ees Imtyie) Term collector cutoff ‘current, de, with (base open, resistance between ‘base and emitter, base short-circuited to emitter, voltage between base and emitter, circuit between ‘base and emitter) emitter cutoff current emitter cutoff ‘current, de, collector open ‘emitter-collector offset current emitter cutoff current, de, base short-circuited ‘to collector Definition ‘The de current into the collector terminal when itis biased in the reverse direction® with respect to the ‘emitter terminal and the base terminal is (es indicated by the last subscript letter es follows) = opencircuited. returned to the emitter terminal through @ specified resistance. = short-circuited to the emitter terminal. \V= returned to the omitter terminal through 2 specified voltage. Xs retuned to the emitter terminal through a specified circuit. (Ref IEEE 255) "For these parameters, the collector terminal is considered to be biased in the reverse direction when it is made positive for N-P-N transistors or negative for P.N-P transistors with respect to the emitter termin ‘The current into the emitter-1 terminal of a double- emitter transistor when the emitter-1 terminal is biased with respect to the emitter-2 terminal and the ‘transistor isin the off state (the collector-base diode is not forward-biased) with specified termination of the collector and base terminals. ‘The de current into the emitter terminal when it is biased in the reverse direction with respect to the base terminal and the collector terminal is open- circuited. (Ref IEEE 255) ‘The external shortcircuit current between the ‘emitter and collector when the base-collector diode is, reverse biased. ‘The de current into the emitter terminal when it i biased in the reverse direction* with respect to the collector terminal and the base terminal is short: circuited to the collector terminal. (Ret IEEE 265) “For this parameter the emitter terminal is considered to be biased in the reverse direction when it is made positive for N-P-N transistors or Negative for P-N-P transistors with respect to the collector terminal, ‘See preferred symbol yielimeg) ee TEXAS INSTRUMENTS INCORPORATED. 121GLOSSARY MULTIJUNCTION TRANSISTORS —_—— Symbol Term Definition Iml¥oe) Soe preferred symbol Yoetimag) ly noise current, See page 1.3 equivalent input WF or NF* re, average or spot ‘See page 1-3. Pip. {arge-sgnal input ‘The product of the large-signal ac input current and mE power (common-bese, voltage with the comman reference terminat circuit commonemitter) configuration. Pip. sal signal input “The product of the smeltsignal a¢ input current and Pie power (common-base, vyoltage with the common reference terminal circuit common-emitter) configuration. Pos. farge-signal output ‘The product of the large-signal ac output current and. PoE power (commmon-bese, voltage with the common reference terminal circuit common-emitter) configuration. Pob. small-signal output ‘The product of the small signal ac output current and Poe power (common-base, voltage with the common reference terminal circuit, common-emitter) contiguration. Pr total nonreactive ‘The sum of the products of the de input currents and. power input to all voltages, Le, Terminals Vpe"ls + VoE-Ic or Veesle + Vop"Ie ree collector-base The product of the intrinsic base resistance and time constant collector capacitance under specified small-signal conditions. ree (sat) saturation resistance, The resistance betwoon the collector and emitter collector to-emitter terminals for the saturation conditions specified. (Ret IEEE 255) Relvie) See preferred symbol Vie(eal) Retvoe) See preferred symbol Yoe(real) Fete2(0n) smallsignal emitter- ‘The smollsignal resistance between the emitter emitter on-state terminals of @ doubleemitter transistor when the resistance base-collector diode is forward:biased. Ro thermal resistance ‘See pages 1-2 and 1-3. #0 0r 521. forword transmission coefficient >] The respective forward or reverse transmission Ste oF S216 (common-base, common-emitter] > coefficient with the transistor in the indicated configuration. See pages 1-3 and 1-4 SbF Stab. reverse transmission coefficient se OF 8129 (common-base, common-emitter) IF and NF abbreviation ae oftan used for 29m 12 Texas INSTRUMENTSGLOSSARY MULTWJUNCTION TRANSISTORS SU Un Uren ‘Symbol Sib OF S1tb, Bie OF S116 Sob oF $22, $00 OF $226 cere g gered Vas. Vee Vec. Vee. Ves. Vee, Ves. Vec eb Yea. eb. Yee VieR)c80 (formerly BVcgo) Term input reflection coefficient (common-base, common-emitter) ‘output reflection coefficient (common-base, common-emitter) junction temperature delay time fall time ‘turn-off time ‘umn-on time Pulse time rise time storage time se average time ‘supply vottage, de (ese, collector, emitter) voltage, de or average (base-to-collector, bbase-to-emitter, ccollector-to-bese, collector-to-emitter, ‘omitter-to-bece, emitter-to-collector) voltage, instantaneous value of alternating component (bese-to-collector, bbase-to-omitter, collector-to-base, collector-to-emitter, emitter-to-hase, ‘emitter-to-collector) breakdown voltage, collector-to-base, femittor open. Definition ‘The respective input or output reflection coefficient with the transistor in the indicated configuration. See page 1-4. ‘See page 1-4, See pages 15 and 16. See pages 1.5 and 1-6. ‘The sum of t +f, See pages 15 and 16, “The sum of t+ ty See pages 1.5 and 16. See pages 1-5 and 1-6 See pages 15 and 16. ‘See pages 15 and 16 See page 1-6. ‘The de supply voltage applied to a circuit connected ‘to the reference terminal, ‘The de voltage between the termina i first subscript and the reference terminal (stated in ‘terms of the polarity at the terminal indicated by the ficst subscript), The instantaneous value of oc voltage between the terminal indicated by the first subscript and the reference terminal. ‘The breakdown voltage between the collector terminal and the base terminal when the collector terminalis biased in the reverse direction with respect. to the bese terminal and the emitter terminal is open-circuited. (Ref IEEE 256) es TEXAS INSTRUMENTS 123124 GLOSSARY MULTIJUNCTION TRANSISTORS —S Symbol ‘W4BR)CEO (formerly BVcEO} ViBRICER (formerly BVcER) Vipryces. (fromerty BVces) ‘V(BRICEV (formerly BVcev) ‘ViBR)CEX (formerly BVCEX) WiBRETE2 V(BRIEBO. (formerly BVEBO) ‘VipR)ECO, (formerly BVeco! Veaiti: Voeifl- VeBiti): Veciti) Term breakdown voltage, collector-to-emitter with (base open, resistance between base and emitter, base short-circuited to emitter, voltage between ‘base and emitter, Gireuit between ‘base and emitter) emitter-emitter breakdown voltage ‘breakdown voltage, ‘emitter-to-base, collector open ‘breakdown voltage, ‘emitter-to-collector, base open ‘de open-circuit voltage {floating potent (collector-to-bese, collector-to-emitter, emitter-to-base, emitterto-collector) Definition ‘The breekdown voltage between the collector terminal and the emitter terminal when the collector terminal is biased in the reverse direction® with respect to the emitter terminal and the base terminal is (as indicated by the last subscript letter as follows): = opencircuited. R-returned to the emitter terminal through ‘specified resistance. short-ciceuited to the emitter terminal. V=retumed to the emitter terminal through specified voltage. returned to the emitter terminal through = specified circuit (Ref IEEE 256) “For these parameters, the collector terminal considered to be biased in the reverse direction when it is made positive for N-P-N transistors or negative for P-N-P transistors with respect to the emitter terminal ‘The breakdown voltage between the emitter terminals, of a double-emitter transistor, with specified termination between collector and base. ‘The breakdown voltage betweon the emitter and base ‘terminals when the emitter terminal is biased in the reverse direction with respect to the bese terminal ‘and the collector terminal is open-circuited. (Ref IEEE 255) ‘The breakdown voltage between the emitter and collector terminals when the emitter terminal biased in the reverse direction” with respect to the ‘collector terminal and the base terminal is open circuited. “For this parameter the emitter terminal is considered to be bissed in the reverse direction when it is made positive for N-P-N transistors oF negative for P-N-P transistors with respect to the collector terminal ‘The de open-circuit voltage {floating potential) between the terminal indicated by the first subscript ‘and the reference terminal when the remaining ‘terminalis biased in the reverse direction with respect to the reference terminal. (Ref IEEE 255) —_— TEXAS INSTRUMENTSGLOSSARY MULTWUNCTION TRANSISTORS — _ Symbol eso Vee(or) Veetea) Vceo, VoER. Vers. Veev. Veex VeBo VECIofs) Mere2(0%9)| laVerE2I0ts)laig JAVErE2(0f)l4T Va Term collector-to-base voltage, de, emitter ‘open collector-emitter offset voltage saturation voltage, collector-to-emitter collector-to-emitter voltage, dc, with (base open, resistance between ‘base and emitter, base short-circuited to emitter, voltage between base and emitter, Circuit between base ‘and emitter) emitterto-bese voltage, de, collector open emittercollector offset vottoge magnitude of the emitter-emitter offset voltage ‘magnitude of the change in offset voltage with base current magnitude of the ‘change in offset voltage with ‘temperature noise voltage, equivalent input Definition ‘The de voltage between the collector terminal and the ‘base terminal when the emitter terminal is open: circuited. ‘The open-circuit voltage between the collector and emitter. terminals when the base-emitter diode is forward:-biased. ‘The de voltage between the collector and the emitter ‘terminals for specified saturation conditions. (Ref IEEE 255) ‘The de voltage between the collector terminal and the ‘emitter terminal when the base terminal ie (as indicated by the last subscript letter as follows): (0 open circuited. Reroturned to the emitter termi specified resistance. ‘S short-circuited to the emitter terminal. ‘Ve returned to the omitter terminal through 2 specified voltage, X= returned to the emitter terminal through a specified circuit, I through a ‘The de voltage between the emitter terminal and the base terminal with the collector terminal open- circuited. ‘The open-circuit voltage between the emitter and collector when the base-collactor diode is torward- biased. ‘The absolute value of the open-circuit voltage between the two emitters of a doubleemitter ‘transistor when the base-collector diode is forward- biased. ‘The absolute value of the algebraic difference between the emitter-emitter offset voltages of & double-emitter transistor at two specified base ‘The absolute value of the algebraic difference between the emitter-emitter offset voltages of a doubleemitter transistor at two specified ambient ‘temperatures ‘See page 1-6, oo Texas INSTRUMENTS 125126 GLOSSARY MULTWUNCTION TRANSISTORS — eee Symbol Vat Vier vie Vib. Vie imag) Imtyie) Yie(reat) Relvie) Yob- Yor Yootimag) Im(¥oe) Yootreai) Relvoe) Ye. vee Term reach-through (punch-the voltage ‘small-signal short circuit forward: transfer admittance (common-base, common-emitter) small-signal short circuit input admittance (common-base, common-emitter) Imaginary part of the small-signal short-circuit input admittance {common-emitter) real part of the small-signal short circuit input admittance {common-emitter) ‘small signal short- circuit output ‘admittance (common-base, ‘common-emitter) imaginary pert of ‘the small-signal short-circuit output ‘admittance {common-emitter) real pert of the ‘small-signal short- circuit output admittance {common-emitter) smal signal short- cireuit reverse tranefor admittance (common-base, common-emitter) rou) Definition That value of reverse collector-to-base voltage at which the space-charge region of the collector-base junction extends to the spacecharge region of the emitter-base junction. (Ref 1EEE 255) ‘The ratio of rms output current to rms input voltage with the output short-circuited to ac. ‘The ratio of rms input current to rms input voltage ‘The ratio of rms input current to the rms outof- phase (imaginary) component of the input voltage ‘The ratio of rms input current to the rms in-phese {real) component of the input voltage with the output short-circuited to ac. ‘The ratio of rms output current to rms output voltege ‘with the input short-circuited to ac. ‘The ratio of rms output current to the outo-phese imaginary) component of the rms output voltage ‘with the input short-circuited to ac. ‘The ratio of rms output current to the in-phase (real) component of the rms output voltage with the input short-circuited to ac. ‘The ratio of rms input current to rms output voltage with the Input short-circuited to ac. eee TEXAS INSTRUMENTSGLOSSARY UNWJUNCTION TRANSISTORS UNIJUNCTION TRANSISTORS: ‘Terms and Definitions Letter Symbols, Terms, and Definitions Symbot Term n intrinsic standoff ratio tB2{mod) ‘interbase modulated current 'e820 (peak-point current ) raters 0 the device Definition ‘A region of a semiconductor device into which minority carriers are injected. ‘A region from which charge carriers that are minority carriers in the base are injected into the base. (Ref. 60 IRE 28.51) ‘A semiconductor junction normally biased in the forward direction to inject minority carriers into the base. (Ref 60 IRE 28.81) The point on the emitter current-voltage characteristic cor: responding to the lowest current at which dVepi/dle = 0. See page 1-16. ‘The point on the emitter current-voltage cheracteristic corres: ponding to the second lowest current at which dVEBq /dlE = 0. ‘A three-terminal semiconductor device having one junction and a stable negative-esistance characteristic over a wide temperature, range. Graphic symbols for unijunction transistors (Ref, ANS 32.2): N-2 (P-Type Base) PN (N-Type Base) =H emitter ae emitter base 1 base 1 NOTE: In the graphic symbols, the envelope is optional if no element is connected 10 the envelope. Definition ‘The ratio (VP—VFI/VB2B1, where VF is the forward voltage drop of the emitter junction, ‘The current into the base-2 terminal when the emitter ‘current is greater then the vallay-point current. ‘The current into the emitter terminal when it is biased in the reverse direction with respect to the bbave-2 terminal and the base-1 terminal is open: circuited, ‘The emitter current at the peak point. minal connected to thow resin. TEXAS, INSTRUMENTS 127GLOSSARY UNWJUNCTION TRANSISTORS —_—_—— Symbot Term Definition v valley-point current “The emitter current atthe valley point. "8B Interbase resistance ‘The resistance between the two bases with the ‘emitter current equal to zero, w junction temperature See page 1-4 tp pulse time See pages 1-5 and 1-6. w pulse average time Sea page 1-6. Vezet Interbase voltage ‘The de voltage between base 2 and base 1 Veet (sat) emitter saturation ‘The forward voltage between the emitter and base 1 voltage at an emitter current greater then the valley-point current. ost base-1 peak “The peak voltage measured across the resistor in series voltage with bese 1 when the device is operated as a relaxation oscillator in a specified circuit. vp peak point ‘The voltage between the emitter and base 1 at the voltege peak point. w valley-point ‘The voltage between the emitter and base 1 at the voltage valley point. Veet NEGATIVE, curorr _ a SATURATION __ recion resistance of °“TeGiow ve eax row | 1 1 ' | pvauiey pone \ VEGI ise — Ww: ° DIAGRAM ILLUSTRATING CURRENT-VOLTAGE CHARACTERISTIC ee 128 TEXAS, INSTRUMENTSGLOSSARY FIELD-EFFECT TRANSISTORS Terms and Definitions Term channel ee a s In the sbove drawings of the insulated-gate devices, the substrate (bulk) is shown terminated lther internally or externally. The symbol at the right ilustrates an ‘unterminated (passive) substrate, PASSIVE SUBSTRATE TEXAS INSTRUMENTSGLOSSARY FIELD-EFFECT TRANSISTORS —_—_——— Lotter Symbols, Terms, and Definitions brs, bis, bos. bes Cas Cau Cis ‘Symbo! Term ‘common source smal: ignal (forward transfer, input, output, reverse transfer) susceptance drain source capacitance drain substrate ‘capacitance shorteireult input ‘capacitance, common: short-circuit output ‘capacitance, common source short-circuit reverse ‘transfer capacitance, ‘noise figure, average or spot ‘common-source small- signal (forward transfer, input, output, reverse ‘ransfer) conductance ‘small-signal insertion ower gain, (common- gate, common source) ‘small-signal transducer Power gain (common: gate, common source) drain current, de drain cutoff current Definition The imaginary part of the corresponding admittance, See Yfs: Vis: Yos: and Yrs. Symbols in the forms bx ‘and Ycx(imag) ore equivalent. ‘The capacitance between the drain and source terminals with the gate terminal connected to the ‘uard terminal of a three-terminel bridge. ‘The capacitance between the drain and substrate terminals with the gate and source terminals, ‘The capacitance between the input terminals (gate ‘and source) with the drain short-circuited to the source for alternating current. (Ref. 1EEE 256) ‘The capacitance between the output terminals (drain ‘and source) with the gate shortcircuited to the source for alternating current. (Ref. IEEE 255) ‘The capacitance between the drain and gate terminals with the source connected to the guard terminal of a ‘three-terminal bridge. See page 1:3, ‘The real part of the corresponding admittance. See Vis Vise Yos: 2nd rs. Symbols in the forms Gx and Yxx(real) are equivalent, The retio, usually expressed in dB, of the signal Power delivered 10 the load to the signal power delivered to the input. ‘The ratio, usually expressed in dB, of the signal ‘The direct current into the drain terminal ‘The direct current into the drain terminal of a depletion-type transistor with a. specified reverse ‘gate-source voltage applied to bias the device to the off state, —_—————$—$—— TEXAS, INSTRUMENTS 131432 GLOSSARY FIELD-EFFECT TRANSISTORS _—_ — — ‘Symbol 'oton) toss. Ig 'oF Ion less, \ossF tessa im(vte), Im(vis). Imtvos). lmlvrs) Is stort 'sos Term on-state drain current ‘oro-gate-voltage drain current gate current, de forward gate current reverse gate current reverse gate current, drain short-circuited 10 source forward gate current, drain short-circuited 10 soures reverse gate current, ‘drain short-circuited to source noise current, equivalent input source current, de source cutoff current zero-gate-vottage source current Definition The direct current into the drain terminal with specified forward gate-source voltage applied to bias the device to the on state. ‘The direct current into the drain terminal when the ‘gate-source voltage is zero, This isan on-state current in a dopletion-type device, an off-state current in an enhancement-type device. ‘The direct current into the gate terminal. The direct current into the gate terminal with » forward gate-source voltage applied. See VGSF- The direct current into the gate terminal with a reverse gate-source voltage applied. See VSR. ‘The direct current into the gate terminal of a junction-gate fieldettect transistor when the gate terminal is reverse-biased with respect to the source terminal and the drain terminal is short-circuited to the source terminal. The direct current into the gate terminal of an Ingulated gate field-effect transistor with a forward gatesource voltage applied and the drain terminal short-circuited to the source terminal. See V@sF. ‘The direct current into the gate terminal of an insulated-gate field-effect transistor with @ reverse gate-source voltage applied and the drain terminal short-circuited to the source terminal. See VGgR- See page 1.3, See preferred symbols bfs oF ¥fs(imog)- Dis OF Vis(imag): Dos oF Yos(imag)- brs oF Yestmag) ‘The direct current into the source terminal. ‘The direct current into the source terminal of a doplotion-type transistor with a specified gatedrain voltage applied to bias the device to the off state. ‘The direct current into the source terminal when the ‘gate-drain voltage is 2er0, This is on on-state current in a depletion-type device, an offstate current in an enhancement-type device. SSS TEXAS, INSTRUMENTSGLOSSARY FIELD-EFFECT TRANSISTORS ——————_— — Symbot NF of NF* *dsfon) "DS{on) Retyts). Retvid, Retvos). Reyes) Sg OF S21, st5Or 8215 fg 0F 8125. 515 0° 5125 Sig Or 811g, Sis or stig $09 9F $229. 805 9F $225 vw ta(ott) Term ‘noise figure, average oF spot small-signal drein- source on-state static drain-source onetate resistence thermal resistance forward transmission coafficient (common gate, common-source) reverse transmission coefficient {common-gate, common-source) input reflection coefficient (common -gate, common source) output reflection coetficient (common-gate, common-source) junction temperature turn-off delay time Definition ‘See page 1-3. ‘The smaltsignal resistance between the drain and source terminals with a specified gate-source voltage ‘@pplied to bias the device 10 the on state. For a ‘depletion-type device, this gate-source voltege may be 00, ‘The de resistance between the drain and source ‘terminsis with a specified gate-source voltage applied ‘to bias the device to the on state. For a depletion- ‘ype device, this gate source voltage may be zero. ‘See preferred symbols: ofs OF Visreal)- is OF Vis(rea), ‘0s °F Vorireal). ‘rs OF Yes(real) ‘See pages 1-2 and 1-3. The respective forward or reverse transmission ‘coetficient with the transistor in the indicated ‘configuration. See pages 1-3 and 1-4. ‘The respective input or output reflection coefficient ‘with the transistor in the indicated configuration. See age 1-4, ‘See page 1-4. ‘The time interval from a point 90 percent of the ‘maximum amplitude on the trailing edge of the input, pulse t0 » point 90 percent of the maximum ‘amplitude on the trailing edge of the output pulse, ‘This corresponds to storage time for a multijunetion transistor. See pages 1-6 and 16. NOTE: This definition assumes a device initially in the off state with an input pulse applied of proper polarity to switch the device to the on state “RT and WF abbreviations ae oftn used for mumbots F and F: however, the nmol F and F are praterre. TEXAS, INSTRUMENTS 133134 GLOSSARY FIELD-EFFECT TRANSISTORS TEER ‘Symbol talon) fo) ceo ‘VieRiGss, V(BRIGSSF ViBRIGSSR Yop. Vas. Vss. Vos Vos ‘Term ‘turn-on delay time fell time turn-off time tumon time pulse time rise time pulse average time ‘gate-source breakdown voltage forward gate-source breakdown voltage reverse gate-source ‘breakdown voltage supply vottage, de (drain, gote, source) drain-gate vottoge rain source voltage Definition ‘The time interval from a point 10 percent of the ‘maximum amplitude on the leading edge of the input pulse t0 a point 10 percent of the maximum amplitude on the leading edge of the output pulse This corresponds to delay time for a multijunction translator. See pages 1-5 and 16. NOTE: This definition assumes a device initially the off state with an input pulse applied of proper polarity to switch the device to the on state. See pages 1.5 and 1-6 The sum of tajott + tf. See pages 1-5 and 1-8. “The sum of tafon) + te See pages 15 and 16. See pages 1.5 and 1.8. See pages 15 and 16, See poge 1-6. “The breskdown voltage between the gat and source terminals with the drain terminal short-circuited to the source terminal NOTE: The. symbot V(gAyGss ® primarily used with junction-gate fiidetfect transistors. The symbols V(BR)GSSR OF VIBRIGSSF should be used with insulated gate transistors hovng shunting dioder (or similar voltge-fimiting devices. “The breskdown voltage between the gate and source terminals with a forward gate-source voltage applied ‘and the drain terminal short-circuited to the source terminal. See VGSF. ‘The breakdown voltage between the gate and source ‘terminals with @ reverse gate-source voltage applied and the drain terminal short-circuited to the source terminal. See VGSR. “The de supply voltage applied to @ circuit connected to the reference terminal. ‘The de voltage between the drain and gate terminals. The de voltage between the drain and source terminals, —_ Texas, | INSTRUMENTSGLOSSARY FIELD-EFFECT TRANSISTORS ——— Symbot Voston) Vou Vos Vesr Vesr Vasioft) Vosith) Vou Va Vsu vfs Yis Yor Term drain source on-state voltage drain substrate voltage gate-source voltage forward gate-source voltage reverse gate-source voltage ‘gate-source cutott voltage gate-source threshold voltage gate substrate voltage noise voltage, ‘equivalent input source-substrate voltage common-source small: signal short-circuit forward transfer ‘admittance ‘common-source small- signal short-circuit Input admittance common-source small- signal shortcireuit ‘output admittance Definition ‘The de voltoge between the drain and source ‘terminals with a specified forward gate-source voltage: ‘applied to bias the device to the on state. ‘The de voltage between the drain and substrate terminals, ‘The de voltage between the gate and source terminal. ‘The de voltage between the gate and source terminals. of such polarity that an increase in its magnitude ‘causes the channel resistance to decrease, ‘The de voltage between the gate and source terminals, ‘of such polarity that an increase in its magnitude ‘causes the channel resistance to increase. ‘The reverse gatesource voltage at which the magnitude of the drain current of a depletion-type field-effect transistor has been reduced to 2 specified low value, magnitude of the drain current of an enhancementtype fieldeffect transistor hes been increased to a specified low value. ‘The de voltage between the gate and substrate terminals. ‘See page 1-6. ‘The de voltage between the source and substrate ‘terminals. The ratio of rms drain current to rms gate-source voltage with the drain terminal ac short-circuited t0 the source terminal. ‘The ratio of rms gate current to rms gatesource voltage with the drain terminal ac short-circuited to the source terminsl, ‘The ratio of rms drain current to rms drain-source voltage with the gate terminal ac short-circuited to the source terminal, —_—_—_—_—_ TEXAS, INSTRUMENTS 135GLOSSARY FIELD-EFFECT TRANSISTORS ‘Symbol Term Definition ves common source smll- The ratio of rms gate current to rms drain-source signal short cirouit voltage with the gate terminal ac short-circuited to reverse transfor the souree tari ‘admittance Yfstimog)s commonsource small: “The imaginary part of the corresponding admittance. Yislimag)- signal (forward transfor, See YS Vis, Yos. and Yrs. Symbols in the forms Yostimag)- input, output, reverse Yestimea) transfer) susceptance Ytstreat) common-source small: “The real part of the corresponding admittance. See Yistreall- signal (forward transfer, Yfs: Vie: Yos, and Yrs. Symbols in the forms ¥xx{real) Yosireal- input, output, reverse and gy re equivalent. Yesreal). transfer) conductance SSS 138 TEXAS INSTRUMENTSSTANDARDS SEMICONDUCTOR STANDARDS DOCUMENTS Following are sources of standards material relating to low-power transistors and diodes: EIA and JEDEC Standards Electronic industries Association 2001 Eye St. N.W. Washington, D.C. 20008 “Telephone: 20250-7200 E Rogistered Outlines and Gauges for Semiconductor Devices—JEDEC Publication No. 12 Preferred Lead Configurations for Field-Etfect Transistors—JEDEC Publication No. 6A, JEDEC Recommendations for Letter Symbols, Abbreviations, Terms, and Definitions for Semiconductor Device Data Sheets and Specifications—JEDEC Publication No. 77 Recommended Practice for Measurement of Transistor Lead Temperature—JEDEC Publication No. 84 Quality Program Requirements for Solid-State Device Manufacturers—JEDEC Publication No. 85 ‘Standard Test Methods for Electronic Component Parts—E1A Standard RS-186-C ‘Test Methods for the Collector-Base Time Constant and the Resistive Part of the Common-Emitter Input Impedance-E1A Standard RS-284 Forward Transient Measurement on Semiconductor Diodes—EIA Standard RS-266 Measurement of SmallSignal HF, VHF, and UHF Power Gain of Transistors-E1A Standard RS:306 Voltage Regulator Diode Noise Voltage Messurement-E1A Standard RS-207 Messurement of Transistor Noise Figure at MF through VHF-—EIA Standard RS-311A Messurement of Reverse Recovery Time for Semiconductor Diodes-EIA Standard RS-318 Characterization of a Reverse Recovery Test Fixture—E1A Standard RS-318-1 ‘Thermal Equilibrium Conditions for Measurement of Diode Static Paremeters-EIA Standard RS-320 Numbering of Electrodes in Multiple Electrode Semiconductor Devices and Designation of Units in Multiple Unit ‘Semiconductor Devices—E1A Standard RS-321A ‘The Measurement of ICrel-E1A Standard RS-340 ‘The Measurement of Transistor Noise Figure at Frequencies up to 20kHz by Sinusoidal Method—EIA Standard RS-353 Measurement of Transistor Equivalent Noise Voltage and Equivalent Noise Current at Frequencies up to 20 kHz—EIA Standard RS-364 Designation System for Discrete Semiconductor Devices—EIA Standard RS-370 ‘The Measurement of Small‘Signal VHF-UHF Transistor Short-Circuit Forward Current Transfer Ratio—EIA Standard RS-371 ‘The Measurement of Small Signal VHF-UHF Transistor Admittance Parameters-EIA Standard RS-372 Method of Diode “CQ” Massurement—E1A Standard RS-381 ‘Measurement of Small Values of Transistor Capacitance-E1A Standard RS-208 Method of Direct Measurement of Diode Stored Cherge-JEDEC Suggested Standerd No. 1 ‘The Measurement of Small‘Signal Transistor Scattering Parameters-JEDEC Tentative Standard No. 10 ——— TEXAS, INSTRUMENTS 137138 STANDARDS ee International Electrotechnical Commission (IEC) Standards ‘American National Standards Institute, Ine. 1430 Broadway New York, N.Y. 10018 ‘Telephone: 212-8681220 Publication 147: Essential Ratings and Characteristics of Semiconductor Devices and General Principles of ‘Measuring Methods. Part 0 — General and Terminology Part 1 — Essential Ratings and Characteristics art 2 — General Principles of Measuring Methods Part 3 — Reference Methods of Measurement Publication 148: Letter Symbols for Semiconductor Devices and integrated Microcircuits Publication 191: Mechanics! Standardization of Semiconductor Devices (Military Standards ‘Commanding Officer U.S. Naval Publications and Forms Center 5801 Tabor Avenue Philadelphia, Pa. 19120 MIL-$-19500: Semiconductor Devices, General Specification for MIL‘STD-105: Sampling Procedures and Tables for Inspection by Attributes MIL-STD-202: Test Methods for Electronic and Electrical Component Parts MIL-STD-760: Test Methods for Semiconductor Devices, MIL-STD-883: Test Methods and Procedures for Microelectronics —_—— TEXAS, INSTRUMENTS,Transistor Selection GuidesTRANSISTOR SELECTION GUIDES “These guides are arrayed into families according to trensistor structure and applications. These families are: FAMILY GUIDE Page Low-Level Amplifiers tee cee 2 (ee 660001000 b0000Guc0GeG tes 22 High-Voltage Amplifiers os eee aaa High-Voltage Amplifiers 2. 2 Ae eee 23 High-Frequency Amplifiers... ee 24 High-Frequency Amplifiers 2... 2 ee O06 24 NPN General Purpose. ee ee eee aco PNP General Purpose fee 27 lGinchne eee eee Det 28 Switches 2 g560 eee 210 (Giioewern) eee ee eee ea an (ciioppers) eee ee an Matched Duals... 2. at ee 242 Matched Duals... eee : ners) (eT 6 adh abo ddondo0gdod5 0000 2. 29 Unmatched Duals a sees 248 243 214 SFET P-Channel Low-Frequency, Low-Noise Amplifiers... 2 ee 244 SFET N-Channel General Purpose Amplifiers... 248 SFET P-Channel General Purpose Amplifiers ee 245 SET High-Frequency Amplifiers... . 2... tee Fes 26 IGFET High-Frequency Amplifiers 2. ee eee ete SFET N-Channel Switches and Choppers 2... 2 ee BAT SET P-Channel Switches and Choppers. ee oe aro IGFET N-Channel Switches and Choppers oo 200 IGFET P-Channel Switches and Choppers... 2. De eee 2B JFET Duals eae te 218 (gar 5 bob 6ocgspcocgcocgcaceudcGooFcaea 218 Unijunction, Conventional... - + dagadoddga000 65 249 Unijunction, Programmable. ee 249 ‘The tabular entries within these femilies are not made on the usual manner of increasing type number, which would hhave litle inherent utility, but rather are ranked by the most-significant electrical characteristic of that family. Where there is more than one transistor type having the identical primary characteristic, the types within that group are further ranked by a secondary characteristic, and s0 on. “This form of organization works most efficiently when the user's selection criteria coincides with the organizational lay-out, but should not present undue difficulties i it does not. It should be noted thet the entries are nonexclusive; that isa transistor type may appear in more than one famil ‘specifications so dictats. ‘Grown junction transistors and certain other types not recommended for new design do not appear in these guides.TRANSISTOR SELECTION GUIDES ————— N-P-N LOW-LEVEL AMPLIFIERS ‘NOISE FIGURE bre Weericeo Fe pevice . ec MINMAX ue F worse sw Tyre package’ | cHIr MAX +See puge 220. Tae 30 wv Nase TO46 wie 10nA 30- s0v 2n2432 T0418 NB toma 30. asv 2N24328 To48 nig t0ua 40:20 av TB 115.7 eH) 2N@29 Toe Nn Tome 20120 cov Fab oT ere N24 Tose nT 10ua 100300 av FaB (16.7 eH) 2Ns30 To18 wu t0na 1100-800 cov Bape 1 kHe 2N2404 T0148 nit 10uA 120-360 4sv 2N2506 7018 nu TOnA "250-500 wv Teas @ TORE INSTT? Toe wT 10,0 400.800 cov 1548.0 10H 2Na104 T0186 Nu 100 ua 100300 sov Fa (18.7 kee) 2N5200 Tos2 Nat 100A 100-300 cov Fa 116.7 we ‘ASTS200 AAA. 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Tima 0 35V ‘N28, TO-46 tema 70 2ov 2N29454, Tos mA 20. tov N26 To46 mA 90530 ov Agraoe1 Tos2 Tima ‘90350 30 ‘2NA06T Toaz mk 90390 20v ABTA061 AAA 1m 100. tov 2N20008 7046 ma 12060 sov ABT4062 0.92 T mA 780-660 ‘20 ‘2Na062 Tos ma 180-860 sov AsTa0s2 AAA 2ma 50700 s0v AsTs227 AAA 2ma 50700 ov 25227 7092 Tama "30400 av ‘ABTa0s T0982 tama 20400 av ATAOAA t092 rama, 30400 av AsTaos AAA sama, 20400 a5v ASTAOAA AAA Texas INSTRUMENTSTRANSISTOR SELECTION GUIDES V———— NPN HIGH-VOLTAGE AMPLIFIERS. Vieniczo re DEVICE : MIN on saneanax, vPE acme can v40W Tima 3 RRS Tost Wa ov ma 0. ASTSS50 ARK Naz tov 30ma 30120 znaite 10.29 Nts 1sov 25mA 20. Tis101 AAA naz 160V Tima 3 2NSS5 T097 N27 1eov ma 80. ‘ASTSS61 Aan 27 tov 25mA 20 Tist00 AAA Nz 20v 30mA 20-160 ASTE050 AAA Nts 70¥ 30mA ‘30160 ‘2NSO58 To39 Nis 300¥ 30mA 5180 ASTsO5e AAA ns 300v 30ma 35.160 205058 yoso |_nis P-NP HIGH-VOLTAGE AMPLIFIERS Vieniceo FE Device MN ete na, TYPE aseatead oe wv Tm a Fs TOs au ov tma 4 AsT3496 ANA P17 sov ma 40 2N3496 018 py vzov ma «0 2N3405 70s Pay 120 Tima a0 ASTHOT AAR Pi 120v ma ‘0. 2Na497 10.18 P17 tov toma 40100 ‘ABTS400 AMA P22 tov toma 40-180 2Ns400 082 22 tov ‘Oma 50-180 ‘203694 7039 P22 ov 50mA 100.300 2na835 70.39 P22 180 10ma 60240 ASTsA01 AAR Pea 10V 10mA 60240 2Ns401 ros2 ez 15v ‘soma 50150, "2N3696 7039 Pa 175 Oma 100:300 23637 70.30 2 +See package drawings on page 2:20. —_———— Texas, INSTRUMENTS, 2324 TRANSISTOR SELECTION GUIDES _— — —— N-P-N HIGH-FREQUENCY AMPLIFIERS 7 ViBRICEO ‘CAPACITANCE DEVICE aos min MIN, PARAMETER MAX ‘TYPE 500 Miz 12V Cob, 1.3 pF TISeAA AAR ry 300 Mite sv cob 19F Tis106 AAR N20, 380 MHz 30 Cree 04 pF Tisea ry m7 360 Mz 30 Cree OApF mis108 AAA Ni7 500 MHz 12V Ceb 13 eF TIS62A AAA Naz 480 MH 30v Con OapF Tis128 AAA N28 aso Mite 18V Cob 1.3pF 26222 ros2 Nae 450 MHz 16v. 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P20 zv s0ma 0300 | to0MmHe 247 AMA P20 25v Soma 100. 180 Maz ‘ASTSE30A AMA r20 gov 2ma 0180_| 200mne AsTar25 AMA P16 ov ma ‘50150 | 200mHe "2NGI25 Tost PAB, 3ov soma 30180 | toomHs 23703 Tos P20 3ov soma 30160 | tomes sasr3703 rose P20 zov oma 20180_| roomm: 2Nse48 AAA P20 36v 160 mA 2048 | come: aNT2 To.18 P20 BV 180mA 204s | soMn: 2utat 1099 #20 av 150ma 000 | Gombe 2w122 T0418 20 35V 160mA 3090__| com: 2uit32 1090 P20 35V T50mA e200 | eon 2wz308 Tos 920 vov 10mA 0150 | 250mm 23260 T0418 Pz sov 10mA soso | 200mHz AST3005 AAA Ps wv 10mA co160__| zoo mez 203905 092 Pas “ov toma 100300 | SooMH N26 To-18 P23 ov toma 10000 | 250s ‘ABTa908 AAA m5 ‘ov toma 100900 | 250 MHz 2N3006 092 Ps sov somA 100900 rris01 092 20 4ov somA___100.300 T1803 AMA 20 See package drawings on pege 220. —— INSTRUMENTS CORPORATE Texas |TRANSISTOR SELECTION GUIDES P.N-P GENERAL PURPOSE (Continued) Tre 7 DEVICE y on MINMAX sin TPE PACKAGE: our Tema “40-120 | 200 ir 7NZB08 TOs P20 160ma 40-120 | 20min 2N2008 T0418 P20 180mA 40-120 | 200MHz 2NS48S To48 P20 160mA 50-160___| 150. 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Device . max |_ samen | “Sane | misaas tvee_| ENDER | PacKaaer | cHir a z0V ma NT o Tor | MNEs asa zov co mA 3N218 . ro | nes son ov 50 mA nate D om | mwas 702. zov 50_ma ana17 o or | _mnes on | ostev | 26v 1 ma 3169 e To72 | _MNes 2000 tay 2sv 10 mA 3N170 e tom | nes zon | 153v 25v 10 mA ani7i e tor | Nes L300 20v Sma SN153 o yo-72 mnez IGFET P-CHANNEL SWITCHES AND CHOPPERS Talon) | Vastn) | Varioss Toten) Device . max | miNaMax | MIN MINMAX. ‘tvee_| ENMIDEPL | PACKAGE: woupa | 158V 25V 40120 mA 3N160 = To? own | is5v 25v 40:120ma Niet e ror 250.0 25v ‘ov 530mA 3Ni63 e tom 300.0 26v 2ov 3.90 mA, anes E so7 soon] —18a2v [Sov = mA NIG € 072 20.2. 36v sov & oma 3NIB6A e tom con | 1s32v | sov & mak N85 e Ton 600 2. 38v cov & ma N86, e 072 | por 1090 0 26v 30v 312mA 3Ni74 e ton | mesa JFET DUALS (N-CHANNEL) ‘oss jot ts Vos Device cur MEMAX. om Pa max Tye O5BmA 098 097 Sav NBGA TNT 0.58mA 095 0.95 av 28048 ast 05-amA 098 096 Bmv 1826 ast 05-8mA 9 0.95 1omv 205506 ans O58 mA 08 38 TO mv T1869 ane 059mA 09 09 1omv 2N6o48 ans O58ma os 09 15mv 2N8647 ans 0.58ma 09. os 10mv 1826 NB O58mA 08 08 1Smv 2NSO4T NBT 0.58mA os os 18mv 11827 aust 058mA os os 15mv 11870. 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Tos ust Sua @ 1040. 708 @ 1040, 2N6116 Toe vat SuA@ 10x0. Jona 1040. ase AAA vat LL TEXAS, INSTRUMENTSTRANSISTOR SELECTION GUIDES PACKAGE DRAWINGS Tos 0-18 1039 T0468 Tos2 JSHORT CAN VERSION| To-71 tor 1076 OF 10-78 Tosz T T0116 uv AAA 000 220 TEXAS, INSTRUMENTSTransistor InterchangeabilityTRANSISTOR INTERCHANGEABILITY ‘These lists of low-power (generally one watt or less of power dissipation in free-air) transistors are des design engineer in determining the recommended TI replacement when only the device type number is known. Also included is @ summary of the significant ratings and electrical characteristics of the referenced types. ‘These lists are extensive (approximately 4800 entries) but not definitive, An attempt was made to include all current and recently obsolete domestic types, both JEDEC registered and nonregistered. Undoubtedly there are some inadvertent ‘omissions, Purposely omitted are the European PROELECTRON types, Japanese 25 types, and “hobbyist” types. Careful engineering judgement has been used to provide the recommended TI replacement based on the specifications alone; final application might dictate another choice. Equally careful judgement should be used in selecting a replacement except where the recommended replacement type number coincides with the referenced type. In most cates, the recommended replacement has the same general package as the referenced type; that is, plastic for plastic ‘and metal for metal. For plastie-encapsulated devices, the “recommended” replacement has the same or similar terminal assignments as the referenced type although this terminal assignment may not be truly preferred. The user may consider this ORGANIZATION ‘Those interchangeability lists are divided into six broad classes as follows: Master List of Resistered Types... ss oe . 34 Master List of Nonregistered Types. bees Sees 363 Registered Field-Effect Transistors... ss beeen ee - 392 Nonrogistored Field-Eftect Transistors. bees cee 3104 acisred Unilunezion crengeores een cere epee nies 3116 Nonragistred Unijunction Transistors ee 3417 ‘The Field-Effect Transistor and Unijunction Transistor lists are subsets of the appropriate Master List, ‘oF nonregistered. her registored Every effort has been made to ensure the accuracy of each entry. However, TI makes no warranty as to the information furnished and the user assumes all risk in the use thereof. KEY TO MANUFACTURER CODES (CR — Crystalionics Division, Teledyne Incorporated M_ — Motorola Semiconductor Products F — Fairchild Semiconductor Corporation NA National Semiconductor Corporation GE — General Electric Company RC — RCA Corporation GI ~ General instrument Corporation SI ~ Siliconix, Incorporated IN — Intersil, Incorporated TI ~ Texas Instruments IncorporatedTRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES — aa EATS TECAL GuaactmaTs 5 = nl Ne emaconer oe Yeu | @ | Ceres — |ig=25°¢ Yes Vero ay souvainer sre=a8%e Tan WX @ te [MAK @ | MN | ma fw yw smarlevy tmnt] | latz fume Jor | annv7 020 jatar or | annie 10 30 jawriga own Jor | arrnea 104s tie few for | annie 130 90 fawi20—|rwm for | anz0 150s 70393 feo frame for | anaai7 150 fo oP fanteoa, Ine Jor | ana2i7 13040 99 E tet Inn foe | anaar7 1 ® 999 i" 4 1 — esta ren [or | ananir 0 1939) lantea nen foe | anaaie 0 1999 fawteza fm or | arate ay 9.99 antes few for | anazie wo 40 a9 fawtesa rm [or | anaaie 00 999 fawas” rm Jor | anaaa 7% © zea Ine Jo | anzue 7 ase lene Jor | axav08 2 3% 1s ease ene ae | axavos 20300 | mason [or | anavos 2010 mason one lor | anaes 20 50 net le Jor | axaros [7 perry Ime Jor | anasoe 0 10 ‘aezsza owe or | anaes 2% 30 aes ew [or | avane wo 4s mo] asta to sto] ae ase wen for | anazir wo 4s | moss to fis to] jazz ewe [or | anavoa 3090 fanaa |mnw for | anavos ms | na a}a os fmuazme enw Jor | anavoe ms 0 | pa a} 3 5} a naz Jrme_|ar | 2nas04 oS rasta [me [or | axavox us| oe af ao fname fone ce | anavoe ms 0a | teas a[ 3 wl a naz? me lar | anasoa 30 rsara [rer ar_| avaroe ms | ate 2 15 fanaa irre [or | anavon ms sone apa st | fnao me ar | anos as aon wor | znav06 ms jasase |e for | anaz wos |_| fawasza fm [or | anaaaa 30s . Ss assume foe | amas 10s assaf for | anaa34 moss 1 os nae new for | anaoa 148 —_—$ Texas, INSTRUMENTSTRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES ————— AAU RATIO SERIE, CURACTERTICS 3 * Me re reacneet oe Vou | @ | nina Trmaust — |ranasre Youo Vero ite Fouvaleer ete=aste Tan WOK ete |MAX @ te] MIN | mun mw vy) oayfivy oma] |e massa ren Jor | anazaa ms 1 os faassen lor | anasua ar ar) 1 3/0 faa New far | avass io fmaasa few for | 2na354 mo sas 1s faassen [or | axaasa = 0 «© + 3| # fase | for | anaae wo 4s fauasea fen [or | 2naaea mw ros fmesr ew [or | 2naa7 is 45 | mss to faeaara [ew [or | ansa7 mw ms 10 v9] fee urn or | 2naa8 as 4] asi 10 fawsata wen. Jor | 2nan8a mo 3m | ass 10 » naar een for | anaae ws 8S fawaaea_|ew [or | anaso “© 2s| oo fu Inen Jor | anau0 os uaa — |r [or | ano 8s 2s| ro ae Iwew Jor | 2nsat 8s faeasta [wen [or | anaara was as 25] 0) naa Ine Jor | anau2 Ww '@ 80 faeuza um [or | 2nauza wa 88 praas —|wew for | 2nsan ro Sts | pas new [or | anaao w 6 pagan for | ans w 8 & ass few far | ana rr) a nase je Jor | 2n2v08 135 y fess (mw [or | 2n2000 1010 a s[ 9 furor for | anaav7 m 1s is 5} wo] wert Jw lor | 2na217 ™m 2 ~ 1 5} wl | frwarta wen [or | 2nz217 m » » 15} 1] fawn fem or | anani7 moss vs sf 1} | fmuren nen lar | 2na2i7 mo 8 + 5| wl a nas new Jar | 2nz2i7 m0 15s 3 5| ml | fanaa New Jor | 2na217 = w 3s] mo | fawaran me [or [2naz07 ar er) + s| 29 urs Ine Jor | 2na217 m 8 rs ee farsa | Jor | 2naz17 m 1s 6 1 5] 2 wre |r for | anaai7 mm 1515 ee marr new [or | axaziz a) ws s| | a are new [or | av2zie mo ISS ts 5] a] 29 ar9 new Jor | axzai7 mw vs 5] ao} 29) ruven [ren for | anaztz m0 1s} a] 29 oe, TEXAS, INSTRUMENTSTRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES TAN HATE ERA GRATIS a ” Me rm macaw Oo Yau |e | & “noe Tceraamsst — ranz8tc Yoso Yoso Peel suv Jte~asre Ma MAK ote [OX @ | mn | mae fra) vy (mA) |(V) (mA) cat jmuso from for | anaarr mss 13s] ao] a0) mason fram for | anaatr m8 1 5{ wl wasp rae fos | anaen SEE UNUUNGTION NTERCHANOEABUTY ust cosa fw [us| anaaoa SEE UNUUNCTON INTERCHANGEABLY UST fears few [ur | anaare SEE UNUUNCTON WTERCHANOEABRITY st puro dew lus | anaso SEE UNUUNCTON INTERCHANGEABLY UST nasoa few us| ananan SEE UNUUNCTON INTERCHANOEABLITY UST mason few us| ananoe SE UNUUNCTON INTERCHANGEABLY UST fanani fea [us | aman ‘SEE UNUUNCTION RATERCHANGEAMUTY UST maria fom us | ananta SEE UNUUNGTON ITERCHANOEARLTY UST ware few tus | ana SEE UNUUNCTON ITERCHANOBAMLTY UST fae |e fs | ara EE UNUUNCTON ITERCHANOEAMLTY UST : + fran few [ur | anavaa {SEE UNUUNCTON ITERCHANOEARITY usT fara few fun | auaa SEE UNUUNCTON INTERCHANOEAMLTY UST fags dw tus | ara SEE UNUUNCTION ITERCHANGEABUTY UST ucan few fur | ananaa SEE UNUUNCTION INTERCHANOEABUTY UST fara dew [ur | anavae {SEE UMUUNCTON ITERCHANGEAMITY UST pease dow tus SEE UNUUNGTON INTERCHANGEABLY UST rusia ow fu AEE UNUUNCTION ITEREHANOEABUTY UST a SEE UNUUNGTON INTEREHANOEABUTY UST Prana ow Jus {SEE UNUUNGTON WTERCHANGEABRITY UST fawags” eww [sw | annus 130 as s fuss fone sw | ananas 1 10 6 fas 5] ‘| zal fausr ——_|ow for | anata vw wo] am { fws7a row [or | anavon “sw wo | ase Huse” from [or | 2No096 tae 100100] 123s deo fmusan fron for | anooas ‘sw 0100 | 1280 deo sit fron for | arate 01S ee fmsaia row Jor | raave ™ ieee |eeres| pera sia” |e [or | anaate ™m 138] |) sian fram for | anaate m % » i 5| | ansia——faow for | anaaie mo 5] me fre 5] wl to) fansion (wow [or [anaave m8 1 3{ «| 19 fausis rw for | 2vaton ww 0 seo | 5 fansis pw for | anata sw 30] 580500 | 3 soo fuser frm for | anatoa sw | mom so | sm 4 fusia _|rew [or | anavoa x | m0 so] 2 00 7 sie rw [or | anaar0 © | mo | 4 20 ‘| jausso from for | anna 3% | 2080 © 200 | 4 0 4| mss |r for | anaar © | wo “o| 2 “se 3| —_—$——$ Texas INSTRUMENTSTRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES nn RATS TEECTICAL CHARACTRETICS 3 0 " he vere sAceMeNT Of Vou |e | nan ‘onnemst — |ra-25°¢ Yao Yoro tie saUvAlENT oremasre WN MAX ee [MX ee] MM | MN iow wy teai]ovy tay] | vss lw for | 2x2270 tw 0 0 | 00 = | 280 4 300 INen Jor | aniers wo 6) wo] mo] st Not new for vs 40] 9a s|s 8 PaNs20 new [oe i ee s|4 4 — faneat fern [or vs g/t s[a 8 pier’ Jw |sw | 2nzas2 as 3} nese wr lor | ansoae aw | 20200 fnssoa [wen for | 2Na006 “sw @ | 200 res? wen [or | ansoae caw 100—«100 | 9090200 fawasza ew |r| 2na06 ‘sw 100100 | 3090 © 200 wens Inn Jor | 2Nes m © wo 8 wo fis to Pr Fanassa [em for | anene wo as] 20H ts 13150] 15] a ae? 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Voso ie QUAL te=25°e MIN MAX @ ic [MAX @ te] mm | mun fom) vv tmailivy__ ima) at |2n408 low |sw 10 10 630 1s 5 2s fane13, wn Jor | anner9 m0 75 41m 150 130] 30] 4a] faierza wn [or | angi w 75 ‘10 150 150] 30] javterze nen [or | 2na243 w 120 ‘or 130 | 2 150| 90] aor from for | asi woo wo} as vps # "| anre2a pw ce | anzv04 20 ©6300] 90 1fa 5 21640 lene | sw 25030 e 1 teat exe | sw 2500 10. 1 fanes2. low [sw 25030 1s a anes, Jee [sw 250 as. 1025 a anes Jew [or | anzare wo worm so 1s 150 0} anasa Jone [oP | 2Naaos 250 100 = 80 | 2045 1fa os ess lene [or | anasos: 20125 10] 1020 ifa aNi6s6 lene Joe | anaaos. 250123100 | 2045 1}a 5 antess [new [sw 0 7015 | 301s m0 aso 109} lanier Jen [ws | anton SEE UNUUNCTION RTEROHANGEABLIY UST Janrerva fos [us | anneria ‘SEE UNUUNCTION INTERCHANGEABLY UST fanteis few fu | anterte SEE UNUUNCTION INTERCHANGEABIUTY UST fane74 new [ce 30 45s 1s 5] sol aol 676 lene |sw Wo 45 as 1 “| fawter7 lene sw too 4s 2s| 16] lante79 Inn Jor | 2nzr02 tw 10055] 40120 | 2680 INN op | 2nz102 w 35] 40120 | erry nen |sw | 2N25a7 so 20 200) /2x1700 Inew [or | anzioz “sw 60 me wo ls 2s] A fani704 Inpn op | 2nzar8 04845 | 50200 1 {1 t0] 40] 2Ni708 Ino sw ws 2] wo}2 10 200] awi7os, NPN [sw 040 sor to | 0 00] +" earn Inn [or | anriy 0075 vox 130 [15 150] so] 70] aria jen Jor | anit Ww 75 wo 150 | 1150] 50} 79] nize fw for | 2Ni711 tw 120 wo20 130 | 2 150] 50] 79] [2N1769, Jew [sw | 2nasa7 30 os, 30 2Ni764 (aon 10 ais 1s 10 | fanies7 0 © 8 = 0] 40170150 | 8150 | | Jantea7a 0 © 8 «= 0] 40100150 | 8 150 49| aniea7e 80 = 0 = 0 | 40100150 | 8 130 140) raese wo 4s 20 | 40150100 | 14 #0 aa3e eo 4s 0 | 1250 100 | 14 0 i840 oo 25 15| 10100 50 | 14 | i869 200 100 401010 | 5 30} 3) TEXAS INSTRUMENTS, 3a344 TRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES aan RATIO eacEAL SURAT] a 1" ™ Ne rere acon on Vewen |e | ne forveatest — |tanas°c Yor Vero 1b Scuvalaer ste=25%e TaN WX @ te [MAK @ te] MIN | MN (own oar} cm] —_|vmn) miavo | for | aniev0 00 100 100.900 s 10] 30] a fiers em [or | aurea to 120 wim 1 | 5 150/30] 20 pusiz iow |W. 2 8 33) 16] prise few jsw mo 8 33| 10) fans |e [sw Ow favo |e |sw 2 8 fuiszt me [sw 2 #8 faviezz enw [sw 2 fravas—_|wew [or | anazea 7 sas | 490 7 »| 2 isat fren for | 2nazion m4 wie wo fis 5] ao] al ees fren far | 2vaio2 wo 8 | 3090 «=o | smo! faasss fren for | anaai9n 3 v0.40 100 «a facivas [wen [or | 2nazi9a “3% vwouso veo] «ol fawteas rm [or | 2naz194 ~ % wou 100] «ol nis fun lor » 00200100 10] <0] rises |uew [or @ % ‘00800 100 reo] | faves (row [or oo seo800 100 veo] oo ES INew Jor 2 3000100 73| 0 atest ew [or o » 20500 100 75| oo faviss2 [wen |e - 0 250500 100 7] 0 nies ew |r =» 515010 na) a] niess rw |sw | 2nasa7 ooo zo 0 | as 180 100] fivsta —|en [sw | 2n2597 © mo 0 | as 150 10] fnivss [new [sw a) wi 0 [as 150 Fawivsea [wen [sw | 2n2507 © win wo las 10 109| faxteea” frm |sw_ | 2n2537 0 4 wo = | 2510 200 fives fun [sw | 2n2sa7 im = to [ts 10 2m wives |e |sw_ | 2nasar ar) zoo 10 | us 150 110] fives [ren [sw | 2nasar ry wim 10 | 4s 150 10) Fiera wen Jor | anaate © wes = ‘0 |“2 so] ao] a faster urn [or | anor 10 7 wo]i2 50] 7] ol fawis7a fnew for | anto7e 0100 = wo [12 | 36 0) fane7s rm [or | 2ms7s wo 100 1s wha | | «| fives form [or | 2nazte om 9 8 | 0 ives fren [oe | anaai7 om 2 8 ee) eaves [new [or | anazi7 0 us| | five [wn [or | anazie wm 0 2s| wom 150 a] wen Joe | 202217 2 | mo 19 “0 Ine Jor | axzzi0n fm 10 #| mo ‘mo | 2 | x} new for | anzzt7 fo to | 2000] 220] 10] 9 Texas INS RUMENTS,TRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES om AA RATS TERE GUAT g 0 n Me re eed oe Yeuwn | @ | wom fonneatsr — fra=25-¢ Veno Yoxo ile Suva erenaste TaN MAK ete |RAK@ Te] ma | mae | (wo mar} nas] |e moor fone [or | anavoe wo 9% = | 150 =o [ts a0 «| feiss frm for | anaaat ots] orm Las No 0] na002 |e sw 2 o's faces mw [sw 2 5 face re [ow wos | 7 5 maces mw [sw mo 15 mas |e [sw mo nace eww fw ee) nao fren Jor | anotia wo vs to] 29 (2s as} aol a) naoi fren lor | anaar0 wd] somo 20 | xaos fm for | anaatr wo 4s] nse 0 20 | waooe dim for | amore so 75 75| 1206 = mo | 6 mo | maou fren Jor | anaaie oss | 00 00 | 9 200 7] nos row for | aniens wo 75 75| 2 = 00 | & 200 | maou dem for | ancien to 75 wos 10) ¢ to] 7s! a9 fmaoso fren [bv | anaovo. 50100 sooo [1a] 20] fanaosoa fren [ou | anaoeo mo 100 wo] soi | «| ool el fanaosce em [ou | 2na080 io too nace ium [sw 10 » wo] 7 150 159 raoe7 fun [sw “10 en ee) 159 fnaioa —_|rew Jor | anaioa “wm ws] as w | s io] as naioza— |w [or | anaioza sw 10 | aor 50. | 3 tao] 30 aioe ow [sw | anavoe mo 535 50000 [1s tao “ wai0s eww [sw | anavoe mo 5 as] iso [13 ia = fwaioe rw [or wo rrr rr praior ftw for Ww om mm | 2 20 waios item or Ww @ 7520 300 | 3 200 aeons SEE UNUUNCTON RTERCHANGEABUITY UST | fears: fron few | mos as] como lis vol 7 raica ow [ow 10 3 u praiss—|mnw low oS ul fates mw [ew isolgee zeae a fares [rw [sw 10 vd fates we [sw esses as 9 mater me [sw 8 i mars |e ler id dies a 0 fears (on Jor wo 6] 2 vo pair mw for toot arate erate a aoa P) naire nw lor OO} alt fel] rece ar oan =| fare |me [sw | ananas os | to Fi 4 TEXAS, INSTRUMENTS 345TRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES a ATS ECTOCAL GURACTENETS 5 = Mu Me re emuacount he Yeu | @ | nine ‘creams |ta=25°° Yao Yoo i fouvalget ore=asre TaN WX ete [MAX @ te] MN | min (wy) oasfovy —tmay| |v ater fone |sw_ | anavas wo 5s] 0 5 4 faezves rw [sw_ | ana0u wo 1s | 10 5 ri fanziea fon [sw | anavus wo so] 1 5 4 faeates ewe |sw | awao4e a) ss fares |orw [sw | 2navas 10 0 3] ater fone |sw_ | anarae 0 | faaisa—|ew far | 2naio2 wm | 10900150 J a5 50 | faziv2n [rem [or | 2621924 wm | t00%00 10 | 2550 2 faieze [ren Jor | 2naio20 wo 40 | 100%0 150 [18150 faezisa (wen [or | anata to 50] 4010150 | 35-150 | peaivaa —|uew [or | 2nzis4 fo = 50] dot 150 | 25150 | rates [wen for | 2nzi9a4 wo 30] aot ts | 8190 fanarea_|en [or | anzioe wo | 200s | as 180 | raven iron for | anzioaa to | 2040150 | 25150 2 raves iron [or | 2nzioua to | 2080150 [18150 fates fren [or | 2n2003 ms | 20 10 [35130 faivsn [wen [or | 2n2003 mss] 2 130 130 fauziess Jen [or | 2na243 om ss | 20, 130 130 fawziee ren jor | 2natoz ‘wm | 3585 to | 6 20 4 favzaos [new [sw sw sin | 2 10 [2210 fpaae pew [sw wots | wl 2 1 209 pane fone [sw Sw 10 10| 25100 | 880 ‘0 frazt7 —|rew [or | anzav7 wm | =| 0000 | 80 230 faze pw [or | 2n22t8 mo =| wim to | 480 250 fawaziea [wen [or | anaztea wo 73 wo | wim 10 | a 150/90) 250 pray ieow for | axaais to = a0 | 10090 «= 150 | 4180 230 Brazton —|wow [or | 2nzzion to 730 | 100300 «150 | 3 150) 50) 200 nazz0—|wew far | 2nz220 mm @ | 2080 150 | 4150 22 fan (ew [or | 2naz20 wo 0] sou 10] 4 150 22 fawzzata pw [oe | anaz214 so 73a | ami 150 | 3150/30) 200 razzz iron for | 2nzz22 so @ = 30 | 1009000 | A180 230 avazzan from [or | 2N22224 xo 730 | 100300130 | 3150] $0] 200 feazaae—_|wrw [or | 2nazz28 mo 73 | voos0 130 | 3 150/20] 200 fmazzs [wen Jou | 2N2223 0 100 ‘om 10 ]12 50 | ao] fazaa — |wen [ou | 2n22234 300100 wm 0 [120] 0] oo faze fren [or | 2naztea wo ‘ss =| ass | 480 230 frase mw [or | axazie ws | 1340 25100 “| fraser ftw [or | axaai0 Bs | sores 33 100 pane how [or wo 30200 a) fnaaso fren for | anaaie mm 3 mw] wm 1] 1 9 E EEE 346 Texas, INSTRUMENTSTRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES TAA RATS | SsETRCAL GHARACTRTIS i 0 ” Me rm saraconmner a Yes |e | von cnvmarsr — |iyas'¢ Yoro Yoo tte uvainer te=28%6 Mn WAX @ te [MAK @ | Mm | MN | wy imailovy ima] |e Iwo lor | anazion wm 2s | wom = | 1 | new |sw wo ts] atmo | 7100 220 Iw Jor | anzz4s wo 10 wo} aot | 3880 ‘| mew Jor | ana2aaa so 10] wiz 10 | 28180 | new [or | anazz0 0m sts a | | wo] wl Inew foe | axazz0 mm 2 2»! wo mal 2 1| of a new [ae | anazz0 m m ml sis mal 2 1 a] a new for | awa220 moe sl sm] | al al new Jor | axaaz0 mas as | toma | a1] eo] ol Ine |r | anazay wo 4s] mwa | 2] aso} a New lor | 2x20 sm 3m] sis | 2 “el Og new for | anazz0 mm 2 | 1090 ama] 21] ml a wen [or | anzzn os | tow aa | a | tao] ol Iw for | 2xa220 so 4s] sts ww | 2! ol lnm Jor | 2na220 so 4s so 1000) | 2] ao] al ec os | 2080 a | 2] 130] a ae la lew [sw m7 7 10 lew fw m 7 o 10 wen Jor | anzav0 ‘ws |e ee) wen far | anpan uo ww 0 | 7 2% mw |sw | 2nave as as| to 3 lme law | anaous 338] io 5 me |sw | anasas wo se] te 5 ime |sw | anznas wo 1s] te 5 Ime [sw | 2xavas Sas T me Jaw | anus ws lowe |sw | anznue wo 6 1 os lnew Jar | ansoae ee 130 lr [or | anaooa 8 7520 10 fis wo] |e px lus SEE UNUUNCTION INTERCHANGEABRITY UST Jnr Jor | annie | asia 2 “ new Jor a0 | 128m] smo lw [or ao too woo | 1235 a0 | 9200 wen |e 0 =| om | SO Inn oe 30 100 100/309 © 200 | 50 lnm |r ce) wo 10 | 5150] 1s] ao wen Jor [| 30 win fis iso] as] a New for 30120, win 10 | 3 is0| 30] 2 new |r a0 78 win 10/15 150] 30] a new [sw uo 1s 1 {as ‘= ES) TEXAS INSTRUMENTS “7 INCOMPORSTEO318 TRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES RA TINO TECTCAL CHARACTIITCD 1" * he re Bauder on Youn |e | numa ‘onrmamst — |t,=2s'c Yoro Vero tw souvalnet ste=m8re TaN WAX @ le [MAK @ te] MN | MIN _| iv may |v) ima fo) }__+ ase jn lw x00 i a [as 30 00 fnaao | |NN |W wo 0 i 1] 3s 30 309 fmaao | |N |W a er io 100] fanasat_— [en [sw | anaes ee 0 i) _—— fnaasa (nw [sw wos passa few [swe woos masse iene low wos jazsas jew [sw wo fase (ene [sw 0 fnassr |e [sw wo rasan few or | anvay 1 = «| 17020 © st] a] asso fen for | 2Na2224 wm =~ | 100.000 130 | 38190 230 Faxzason [ren [or | anzzzza wm | tomo 10 [as 0 220 fanzast |e [or | anaes fm % | win tas 10 220 fanzasia —_|wrw Jor | anata wm 0 0 | wor 150 | 2s 190 220 fawzasa” [wen [or | anaioe im =| todo 0 | as 180 250 E 4 araasaa [wow [or | anaiow wo 0 40 | 2040 © 1m [as 150 220 massa |New Jor | 2Naaa1 m 4% 3s] i | 35 190 220 raassa [wen [or | 2N2221 wm sas} 10} 25180 230 zass [wen |sw wos 7 2 faasea [rw [ow om 7 sal pase en [sw tm 0 ©] wr ol as 150 Pe) rasssa (Nsw fo 20 | aot «10 | 25130 2 fassa [New |sw 040 neo 0 | 2510 400] fase fren [sw 0 wi 10 [2510 ‘0 faassen [new [sw mo 40 ‘im to [aso 09 faxza70 jee |? mo 15s] 250 1s maar! fone for ms is] 2 20 20 fara |ewr [or | ansrve wos |e au 3 aaa fone Jor | 2nazve wo sis] me 250 20 fauzs7z— lowe |sw wo 35 35| tots as] fanza7e jen |sw wo 10] 5 73 fnaaao [wow [or | anaiva woo | 20120 190 [19190 0 frasaon —|nen [or | 2N2109 ee 109 fasas foc |re | 2nasee see Fer weeRcHANOEABLITY UST frzatea rem [re | 2629864 S25 FET INTERCHANOEABLITY UST faezaer [ren [or | anasez wo | wom] 10] aol 2 fanzase wor | annoee goo 43a | 100200 © or | 110] 130] 29 araaee itn [or | anzseo a0 78 win iso |1s 150/20] oo nase |iew for | 2n2000 “078 1oo20 so | 13 to] 30] 7) TEXAS INSTRUMENTSTRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES Q rm macnn * wun cura — |iq-24re Youo Veao fuvaine ote=2are “wn (mW) ih jaz |e jor wo sw pase enw foe m2 waars iene ar | anaova 40 ‘| asaaes fone far | anaane “0 0 ) favzaes {wn [or | anaavs “000 “a fawzses mor | suave ar a) ‘0 faase7 tw sw mm ss 209 jonas sw wo «0 10] —a ed | lew [ow wo ao 00 va| New Jor | antes “wm 190 50] New |sw | anaato mo 2] Ime |sw mo 38 Seeew i) + Ime [sw ar ar) 2 1 va] Jw Jor | anazar m 1 a eo] Iw [ou | anzoso ae) 12 0] sof “0 rm fur | anaen {828 UNUUNCTION INTERCHANGEABUTY Ust ta ohne 7 few us | anaora {SEE UNUUNCTION INTERCHANOEABLTY UST lpn fu | anaore SE UNUUNCTION INTERCHANOEABUTY UST lex Jur | anus SEE UNUUNCTION INTERCHANGEABUTY UST Jnx [us | ansoon SEE UNUNCTON NTERCIANGEABUTY UST nw fos | anaroe SEE UNUUNCTON INTERCHANGEABLY UST nw lus | ananr SEE UNUUNCTON INTERCHANGEAMITY UST law Jus | anova SEE UNUUNCTON ITERCHANOEASILTY UST pw Jur | anaore SEE UNUNCTON INTERCHANOEABITY UST faazo ew [ws | anava {8 UNUUNCTION INTIRCHANGEABRITY UST awzazoa fe us| anaoan SEE UNUUNCTION INTERCHANGEABLY UST fnacace = |e us | ance $88 UNUUNCTION INTERCHANOEABUTY UST apaaat few fs | avers SEE UNUUNCTON ITERGHANOEAIITY UST fawaeaia few [ur | anaoaa {$82 UNUUNCTION ROERCHANGEARUTY UST asain daw us | anon S28 UNUUNCTON ITERCHANOEABLITY LST waa? fow [us {88 UNUUNCTON INTERCHANGEABLY UST maze lone [sw vs 5] m0 8 1s fans iw [sw ws 0 00f a0 sas lawzaz?—|npw few sm 4% 68] et «| 0 fawzeza dem [sw | anausa mo 9% | wo as 10 Fy jawzasan |e [sw | anaaza so sas |e 1 [4s 10 E is faassen [ow mo 7s as | worm v0 [us 90] oof oo ease fren [sw soo 75 as] 100300 © go 15130] 30] 99 mags han [sw so 0,0] wot 50 | 3130] 30] 00 zeae few ew so 10 | roo 10 | 3 30] 30] 99 TEXAS, INSTRUMENTS 8320 TRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES TRI RATS RCA. TURACTIRETS i " n Me re sac one Yeu |e | vane anuast —|tan2sre Yoao Yao te TouvAlpeT ote=sre Tame WAX @ te [MAK ete] Mm | fmwy gmas|evy oman fen paar ew [sw mo 7s] 1s wl 2 1 x rane few [sw mmm 7s] os wo] 4 | 36] mae fren [sw som 73 | 7s wo] 4 30] 76] 90) fanaa [ren [or | anato2 3m 10 a0 | rans =o | aso] a0] 1 L Ine [or | anzio2 wo 10 wo sors fia so as] wen lor = 100 wen [ou | anzasa so '@ wm] tomo tft 5] 130] al wen Jou | 2N2459 co m3] tstwoo | | tS] 150] al lnm [or wo 10 woo apa new Jor wo 10 = | 20 a] 3 1 Ine or mm 0 «| x13 1 een Jor wm 10 «| @ a] 3 faxases [ren [or om | 1 apa w| fcusa rn (or zo 10 =| 2 a|3 frasas —|uen [or m im «| @ a] 3 10 fates |New for 3100] a] 3 0 furs ren [sw mos] 8 30 awe wn lw w]e 10 | a par fun lw ww | two | 4 aaa [new for | anaaie | te | 7 faaaro |e [or | anaae wo | wrt fase faxzano wen |ou | annoo mo 73 | goa [13 fxzaaoa —|new ou | 2na080 mo | 502001 [12 mass [een [sw fo s| i to fas 0 fasas (ren [or | anauea moo w| om ofa 1| | wl facziaa rm [ar | annua so = | 10080 «=o ast | so) 8 fzeasa row far | annua mo =o | 100800 «= at [ast | 180) ol fazer fren |re_ | ano7 SEE FET TERCHANOEABLITY UST | anaae rch [re | ancave S6E FET INTERCHANOEAMIITY UST fare rca |re | anzaoo S28 FET RTERCHANOEABAITY UBT feasoo fren [re | 262500 SEE FET INTEROHANOEABAITY UST aso! |e |sw_ | 262597 uo 20] SIs 10 as frasor ium [or wos wo] apis | rasta |uew [or fo 10 © as | 130800 0 wo] 1S 4| fast) fue Jar | anaii7 wm 'm =] moro = two] 1S 4] masta [new for @ » aa} 1580 s| 510] 2) 29 fasts (wn [or mo 0 «| wo 5s] 3 0 «| a rasta |uew Jor mm © «| wa =| 3 10] wal 09 masiz —|urw Jor jm os | 1590 s|3 | 20) 2) rasa |New for jm 1 =| som os | 3 0] a] a SEE Texas INSTR UMENTSTRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES A RATE TacREAL GUAR i 0 y Me rere reraconer we Youn |e | nina gnreamst — |ry-zs¢ Voao Vero a Svar jrgnaste Man AK @ te [WAX @ te] MN | Mt fw) naslov» twas] | mass irom Lor wo 1s | 0200 © 5 | s 10] 00] 100 nas fkew lor mo | iglfest soe tr fas em lor ow] i] 3 te] 3 fas | lor wo | 1] sw] 7 fnasna ww [or | wan m 0 «| om o|s ol ol al ase dw [or | an00 wm © | 10000 oor | 150] 45 rasae ito lor 1 3 | “to20 | 3 "2 pn2ss0 jw lor 10 4 |taas {2 " ras [rm Jor 104s | 2000 13 |e2eemo| era prassz in [or wo so] ss tt ol os nassa mt for = ol tos las tol masa rw for 10 wo] sim to tse fxasay frm [ow | anasar wo] soi 150 [asia 22 awasae dim [sw | anasoo a 30] 00000 so fasta 23 nasa tna [sw | anzsoe xo m0 | oso [sta 2] pnasao fam [sw | anaseo so m0 | 0am iso | asta 20) feasst ne lor 40150180 sas 100 Jia 100 faassen low xo 7s] ao * 109 frase fon [ow mo 9% | a 109 east) |New |sw m 2% 13| 3 160 ES reas |r low mos | 100 Hasse wm ler | amass wo 40s | rosa ‘or | so 150 nas me. lor 4 10 | to a] 41] “aol so nasi mn lor “10 | a] 4} x} 79 nase (enw lor “10 wo] [4 10] a5] 00 nase lone lor “10 «| wo a] 4 30] to} a9 amass ftom for | anaoas “ow to soo ro | 1 ae0| ts) jnases mw [or | ane OO Ot Sos ol ele jnasre mw lor | answe wow] wo s| sw] a] al nase7 lone for | ane wm = | om = 5 | 3 to ml al nasse ——|onw [or | anscor ao 12580 | ts0 s/s 1] m} 3 eases fon lor | ansaor wo so] som =| 3 to] la rasooa [or [or | ansanr 0125 «| om s| 3 | al al feuzsco” fom for | anscor 4 is ‘| como = 5] 3 to] ol al n2soon ome for | znoawr 4 125 too} om = 5] 3 to] ol al mason” fone for | anarve wm ow] ie 1{ 5 w| tl dol fxacoz fore [or | anarve wo] as [5s 0] af al macos iow or | anaroe wo 8 =| i{3 wl x a frases irnw or | anzeos os] oo} vw! oo 2 jzscs few for | znacos to 38 | tm a] so} wo] 39 ———— TEXAS, INSTRUMENTS 3aTRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES ee Tan TOS EGRIEAL GURACTEETSS 3 0 * ie ree nenaceoent on Youn |e | & sone formes |ran2s'e Yor Vero tie FouvAleer re=28°¢ Tan WAX @ 1c [MAK @ te] MO | Hon (nw) vy may |ivy may |_| le Jor | axaroe wo —4s| som = wa [2510 200] a leon [re SE FET RTERCHANGEABLITY UST ren |e SEE FET INTERCHANOEABUTY UST row fre | anacoe Sf FET INTERCHANGEABLITY UST lncn [re | anacon SEE FET INTERCHANOEABLITY UST Ine Jor ‘os 1 s| 9 tent [ae | annie mm» ts] wm =| 58 0p een fae | aN mo ms] om a | «0 oy le [or a0 as 10020 25 new [or | anazie mm © «| 10 20| 200| new |e ow wo] oe 200 Jwen [ou | anzsae wo ass | som at | to] as] as fnew [ou | awasuo yo ss | soo | + tol as] as wen ou | 2x64 go sas | soa =o | 110 { as} as Ine Jou | 2xasia m8 woosco =a | 1 to] 190) 8 new [ou | anes xo 03 | toa =o | 110] 20) a5 ew [ou | aezsaa wo | vos | 1 0/130] as ew [or | 2nzz224 ms teow iso | 4 10 75| 20 lex Jus | anasue £8 UNUUNCTON INTERCHANGEABUTY UST jew us| anaeer SEE UNUUNCTON INTERCHANGEAMUTY UST new [sw “ o » wo [2s 10 320 new Jou | anz2234 mm 00 {ia 0] so] al jee [ou | anazaaa 2 10 | riz 0] 9} leew Jor | 2yzzz2 wooo i|'s 1 20) faera (ren [or ae vfs} 9 fpeasra (ram [or mS r[1s sf mass |uew for ts ifs} | nase |urw [or | anzzz24 2 0 vis 5] 7 fnaerr [wen Jor | 2xaaz0 24s as | 2055 ws 8 raera (wen [cr | anzaat 20 4s as | asis0 35] 9 aera |p Jor | anaes mm 50 | 90380 laa 4] aera | [or | anaes wo 40] a0 a4 2 faaeea —_|rn [or | anrae ms | 2 re “a feces |e or | 2nsaas mo 528 | 20100 2s 50 2s] 109 fearon fnew [ar | annie mm 35-0] 30200 > fmavoe jen [or mo 0 as 102 aoa mario fren [ow “| we [as 0 ‘0 far) from [ae zo 818 | 3090 2 prar2 een ler ym 8] ems 2 maria fren for | ansros wo ise | 2090 2,3 9 EEE 32 TEXAS, INSTRUMENTSTRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES RAN RATS ECTOCAL GMAT 5 i Md Me mace oe Vou |e | 4 orm — |tqasre You Yezo Pie scuvaleer ste=asre mae wax @ te [MAK @ te] MN | Mm tow) mas}ovy__tmay| fee mara raw lor | ansrou wo wl sms 2] sow marie hen Iw m 2a] ie ol] 4 2] aro few [ou | anzaaa mo 0 =| worm 1 | to! a0] a] arate fou | anzzaa oo} worm | to] 30] farm [row [ou | anaceo mo 4s as | 30250 wa] 1 10] 100] 100 jars fnew [oa | anove sow] ass to | 1 to] vse] to ars Jen [on | anpor mo 0 wo] ese 10] 1 to] ae! toy mars fren [on | anooe mo 4s] meio ot | ta] sae] to faarze rm far | anne mos] m0 | ato a] farts (wm lor m0 18 18| 3090 2 P) marie wm or mo ote te ysmas ao] fares | [oa sow | mam = 10 | 1s | oo] 1) fmarer hoon [or wo 7s os | mom vo | a vm0] ve] aml faves fnew foe | anazien wo 733s | wie to | 50/30] 220 farer —|new [ae | anazion wo 75 as | om «to | 450] ao] 2a nar |ew for | anazie wm 73 | mo 10 | 4 so] 15] 230 fare [wen [ar | anazava wo 7s as | wore 10 | a iso] oof aso Iavarea wm lor | avazz2a wo 73 38| room 10 | 4 50| ao] 200 ‘mza00 mw ce | anavou mm 0 3s| om | 4 ts 129] maaor mw |r| anos to as] rms 10 | 4 to 129 fizaoa |r [ou | anavoa 20 smo | zor | 310] 20] al fwaacs fore Jou | anaon wo so] orm 1 | 310] 20] al fzsoa enw fou | anaeoe 20 25) | at sw! 2 wo waeas fro [ou | anavos 2 2 | wim sea eal nasa |r [ou | anasoe 202s | aoa = 0! al al fascr fon [ow | anavor 2 862s m| wim ‘3s 0] a] naeoefne fae wo | 2010 as 4 20] 109 za0Ma ne 7 0 10/2017 2s 4] x] ts) fcaaoe ren [me mo 0 ts| zor 2 [as «| 20 eal nascent Lar wo 0 1s} zim «=. 2 | 354] 20] 19 easier zo 24 0] zor = 2 | asa! 20] aa fnzaion fen |e 20 4 0} rim = 2 | as 4} 20] ta fnaear rem Jor | anaaan wow] as. wo [2s 10| a0] 250] faasr fon for | anaes so 5 as] om to | a0 2 ‘masse —|rnw [or | anavor so 50 a5] 7522s 10 | 4180 129] asso few |u| anav00 {EF NUANETION MTA NEARLTY Ut fener fron [re SHE FET RTERCHANGEABRITY UST jmanea rc |re SEE FET ROERCHANGEABRIY UST mass fren re SEE FET NTEROUNOEABUTY UST fzesa foc fre SEE FET INTERCHANGEABLY UST ee TEXAS, INSTRUMENTS 323TRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES RARNUM BATINOT EAL GARACTERTSS g 0 m Me m8 z menace he Yawn |e | © oa fovea — |ta=as'c You Vero rue fovaleer sre=25%e TaN WAX @ te [MAK @ te] Mav | mun (wy oy tra |or _tmas|__| oe cas urn |sw | anasar wo = | 000 | ao 250 wen [sw | 2n2sa7 wo 86 «=| 3001 | 410 220 een [sw | 202509 mo @ © | ou | 410 230 een [sw | 2y2sa7 wo ww | oo | A180 220 lew [sw 10 wo | tom | Fe new |sw so 10 | aia | as > wen |sw ao 1 =| ita | x Inn |sw wo 10 | ow | | fnew |sw wo wl rarer = new | sw so © | 100 =A] tA 20] new [sw so © | win ula ma x new |sw wo @ = | a] tA | wen [ae | anasv2 mo is| miso 8 =o Iw or) 2no036 wo 1 | mo wl a 1 1 nen Jor wm 1m wl mo wl a } ree for | ances go's | soi = | 210] a0] a mw [or | anaeex wos mm | 210] as] as new Jor | aaa wo 25 | 30200 20 | 100 139 wen Jo | axa2i9 mo 25] 000 20 | 1 500 130] new Jar | 2nas72 wm 13] zm a | 410] 20] aoe wow foe | avons wo | win 0 [as 190 sal me [sw m © w| Is 1 2| me |sw wo ooo] 1s 1 2 fanaa [new far | anaeea to 20] 20. 10 | 5 100 0p fanaa (row [wr | 2nzeee m0] 2 wo | 5 100 “09 fates pew [sw wo © 15| so | 4 10 20] zrasse —|uew [or | anzaie wo 0 ao] zs siz 8 naaso fun [or | 202006 wo 10 | sow | sa] a] fraest [www [or | ana0oe wo 1 | soso owls ral sol a0 fnasss [ow [sw | 2n2004 wo 2] aot a0 [is 10 a0) faansan fon [sw | 2n2004 uo 2 2 » tee] fais —_|new jor | anav0 so 130 as | soz 130 | 6 150] 50] 129 faevs [row [or | 2n720 woo v0| e200 10 | « 150] so] ta9 fawaes7 new [or | anose so ‘a 3 | S000 10] 1 150| 30] 129 fans (wm [or so 10 S| woo so | 8150] 50) 120 praaee jew [or wo wo = | so200 150 | 6 150/50] 120 faavoo (wm [or wo | som 10] 1 150/20] 129 raver fet [sw xo | ao to Jas ‘to a0] maven |uew [ou | anasir no m0 | asus [15/130] a faeaveaa |e Jou | 2navrs zo mo] tases ot | 15] 150] a ee 324 TEXAS, INSTRUMENTSTRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES ——_————— TAO ATR SESE SURAT i ” " he ree sPUCuNENT he Ven |e | & oom eraser rnzie Voso Yoo fae Suva rtemasve same | nn \E | | ow) ow wm. nea ass Ime lor | anavoe ~ © © 4 2x0] favoun ine lear | Znapoua @ © © a 2.0] fmaves nw lor | names ~@ 2 © a zm) fmasese ne lor | mavosa © ® 4 Ee jzasos [me for | anavee woo | wim io] a im 220) faves, me lor | zna0ca ww © | wim 0] 4 im 220) maser me lor | anavor wo 0 | sons | 4 ta 20) fmavera |e for | anavora 4 © | om = | 4 ES) Jaxasoe fron [or | maar @ © wl om 10 | as Pa arto wm lou | arae0o m 4 s} cae sol nasi) me |sw sw 1503s] too] 7 saris |ww fou | axania wo ass | tomo at | | fey + =| wart fre [ou | anaria moss | temo fas Py paris fiw [ou | anamis x 5] ‘wom ot | 35 «| raise fren [ou | anavisa mo 4S] fone | as «| aris frm fou | anarte wo 4s | soso | as «| warren few [ou | anariea wo asus | i000 ot fas ~ | waar from [or | anazien Ce) 1 229 lager fooe fun SE UNINGION NTERGIANOEARUTY ST fmaseo (ren [ou | anseso 0 oso} ooaee | 7 10} 900) oo facet frm ar | aaaro m Fl ‘mmo | ala al “o) ase face fren [te | annie wo | em ‘| “ee moos rw [wr | measro ~~ | mms x) wosne wen [re | aanzn set rt neencnunceanu st Hnases ent [re | avanzt Sex ret nencranceasay st faces fue [re | 2naeat fet Fe nTERCHANOEARETY UST /2na6s7 Incn re ‘SEE PET INTERCHANGEABLY UST vacate (ar | rosa 2 wo wo] a ‘ Pe proce fron lar | ta zm © | » ‘ Pred naero fm far | eee =» 2 2| & ‘ a axaeei rw lor | nave m= | o | 71] 0] aoe fxaera mm or | nave mB | 1 10] > $0] 00} a9 xsers—— | ar | ancora m & 8S iH = nasee [new [ae | avers m8] i. iy | ce += fanaere ren [re | ananan ‘8 rT nTNcHanoeanTY ust fwaene ren |r| ananay fer pr erexcruNOABTY Uist faery rch |re fat pr ermcrnoeasay st axaert ren |r fet er nmctunoea ST balks nAnoeanr |_| fmaroo [uw or | axraoa wow 00] ioomo 10] a 10] | vel marr umm or | anraoa ow to] woe to | a tse | 39) ‘al warez [nw or | anarea xo “os | om‘ [as ‘go rs nares [me or | anarea xe | we os "09 TEXAS, INSTRUMENTS 33638 TRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES —_——— TA RATIOS TaCTRCAL SURAT i 0 n Me rm racer oe Vem |e | saan fonreamsr — |ran2ste Youo Vos nie Suan rtg=asre ane MAK ete [ROK @ Te] mm | mae om om tmar}evr tay] |i area from [or | 2nar00 wo 00 | 100900 so | too 109 frames rm [or | anaes mo | soi so | 8 too too ares mm [or | 2na706 wo | ms || 1 to to9 fare |e for | 2nar07 wo | vow ct | tO 109} nave from [or | 2ns700 wo el woo sf 1 wl a mares fram [or | 2na700 wom | ass ot] to] ws nario fu for | 2nari0 wo =m | worm =| tol ool far) wm for | 2xarin wom | ree 1 | to] 0 mari2_|rew Lor wots 50 | orzo ao | 2 oo] as] al fart fren for | 2xarn wo ee | cous 10 mara om [sw | 2Na725 wo | aise 00 | 22100 2x0] fara |ew [sw too 10 m0 | aise too | 2510 2x0] fara fron [ow | 2naraa woo | wots oo | 2 tm x0 faraca rm [sw | znaraea iw | ois too | 200 a) fanazas, rm [sw | 2na725 wo 50 | ois 100 | 3810 x0| fearasn ew |sw | 267254 tw t —-| Gots 100 | 26100 2) fasarae [mw [ou | 2no010 wo as us| vasa 1 [as s0| ras] 200 naar fone [ou | 2naei0 jo 4s 5 | tasao 1 | asso | 13s] 200 marae fram Jou | 2n20s0 jm | ‘vom 150] 22150] so] 200) marae fren [Du | 2n2060 im | momo 150 | 220] so] 200 farsa fren [ow | 2nava w 9 %{ om ula 10 2x0] favsea from [sw | 2na7o4 wa] ota] ew 23) nara | [sw | 2Na735 Mo iy nia oO 23) narasa fur |sw | aNa7a5 w 7% | mow] yA 230 frase mw [ow ms | mim wla 1 3] fnarace— |urw [sw mm 5 | mim oa] ote 229 naar” [ume [sw m 7 | mo tl 2 10 230 nsrara |WIN |W mm 7 | mo tals ma 239 para [row [or | 2nsose www w0| somo af 1 10f mf aol mara iow lor iw 300 boo | asso a | 510] 30] mare (ome low. | anazue w 7 “e} om a] et 10] snares ewe [sw | 2na2as w @ @| mo tala 10 13) fares |rme [or | 2nadae m0 ol mm wla 0 veal nares [owe Jar | ansassa xm @ «| mo mlx 10 19 fears me lor | 2ruos0 wo zo = mm | 2 200 1 var7s fone [or | 2naa20 sw | 7000 00 | 2 m0 7 fnarre (vw [or vw | 2000 200 | 2 200 7 anarrr [eww lor saw 10 tao | 2000 200 | 2 200 } nara iow lor sw ‘ww | tou 200] 2 200 7 mare iow lor tw | tow m0 | 220 1 TEXAS, INSTRUMENTSTRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES — MAXI RATINGS BECTOCAL CUARACTERITS " * be ve fee be Vauwn | e | Numase oenmanest —ltq=25°¢ Yes. Vero ie EQUIVALENT ste=25%e WN MAX @ tc [MAX @ ic] MN | mnt tow) vv may ev twa fo) lana780 lone [cr tw wo] om 00 | 220 y lana7e1 lene [cr ssw 100-100 | 10.40 = 200 | 2 00 1 asarea lene Jor | 2nsos0 ssw 4040 | 1040 ways iw 1 lana79s love [ce ssw 120120] 1296 fo | 2) 10) 3 fana7v6 Incn re SEE FET INTERCHANGEABLITY UST 23797 INcH [Fe SEE FET INTERCHANGEABLY UST ana798 pup |e | ana7ee 306 | T0450 312 a] 10) oo na79e pnp jor | 2na7e9 36060 | 300900 312 4] 30] 39 zxea000 lms ou | anaas2 20 60 | tsoaso | | 2150) 100) lanaa0 pur Jou | 2nsas2 250 4 | mom = | 221] 00] a9 }ana802 ewe jou | 2nsza7 250 © 6 wo | tsoaso | | 24] 150] 09 /2naa03 Jone [ou | 2n3351 250 4 = wo | 300500 1] 2 300] 100] fanaao4 Ime [ou | 2nzas0 250 wo] 1s0450 12 a] 30) 00} fanaeoua fone [ou | 2N2950 250 60 ao | 150450 a] 2 a] 150] 20] awaaos lene [pu | 2Nzas0 250 © 6 40 | 00900 1] 2 4} 200} 100} fanaeosa fone [ou | 262950 250 © 60 do. | 300900 il | 1) e900] ptt o0l -awa80s lms ou | 2ns006 30 wo | T0480 a] 2 af 150] 109] fanaao7 one fou | 2Nae07 so = 60 | 200800, 1 | 2 41] 500] 100) /2Na008 Jove [ou | 2na808 300 wo | 150450 1 | 2 4] 130) 100) /2na90° lowe [ou | 2Naeor soo 60 | 300.900 1 | 2 1] 300} 109] [anaa10 Jew Jou | 2na810 soo wo | ts0480. 1 [2 a] 130] 109) f2ngeion fone fou | anasto soo 6 ao} 150450 nl lea 130] 29] fanaeny lene [ou | anaent 50 60 | 300900 1] 2 | 300] 100) anaeria—fene [ou | anaeit ee) 1] 2 a] 300] 20) asst Pwr [ou 30 wo | t50480 a [2 af 130] 109] peat Jrwe fou as 40 | 300900 | 2h} eo} 00 fanaa lene [ou aso wo | ts0aso a | 2h] a0] 100 anaes lene [bu 350 «ao | 300900 1 | 2 1] 200} 100] anaes lowe [ou 30 wo | tsa a]2 af 150] 100] favaeion one [ou 20 6] 150450 a] 2 A] 150} 2 anaer7 xp [ou 390 © 604 | 300900 4] 2 A] 300] 100] xaei7a few [ou 250 4g. | 300800 1] 2 a] 300] 29} eng ncn [re | anaeie. ‘SEE FET INTERCHANGEABLITY UST /2na820 roa |re | 2Na820 SEE FET INTERCHANGEABLY UST lavaeat Inc [re | anaeat SEE FET INTERCHANGEABILTY UST janaez2 Incr |re | 2Naez2 SEE FET INTERCHANGEABLY UST + />vae23 Ion re | anaeaa ‘SEE FET INTERCHANGEABLITY UST jawaaza Ion re | 2naez4 SEE FET INTERCHANGEABLY UST anae2s en |e 2 Sa 2 2 200) aNs826 INN |r | anapoa 30 as | 40160 = 10 +200) TEXAS, INSTRUMENTS338 TRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES aaa BATS ETRE GURACTIRETES 5 ” %e Tre ‘REPLACEMENT be Verte) | @ | o NUM onmeansT — |I,=25"¢ Voao Vero ie Suva jrcnasre Tan WO ete YAK ete] te | om ma }ovr_— omy | nt awaear ue ar | sor wow s| 00m 0 209 vatas rw fer xo | em x0) avaeze fone sw | noua xo) | mw Jeo 30 anaeso fre Jor | xa99 wm | so | 180 2x0) awoear fro for | anziea wo of wl a 19 2x0 roesz fron [sw wos 8 | sas 2 | 4 to x prose we ce Zo 40 | room © 10 | 4150] | 20 proese |u| | anos os | ‘oo 3 Ee =| frase me aw | rane mo 0 | 2 a)a “| ross me [sw | ana xo 101m | as alias 15] rosea me [sw | anaous xo ito | io 7 1 aeaess mw [ar | Tsu xo ‘0 'w| mo 2] to «| eaeasa frm [er | nna mo 0 wil mo 2(1 0 rm fosaa (urn [ar | nana mo wl sm 2] tw = roecea frome [er | nse wo» »| ee 2/1 m= awaeas fem |r| sa mo » | wm 2/1 0 19 araeasa [owns [wr | nso mo» w| om 2/1 0 729 nasser far | none mo 0] m0] 2 top raesia rw far | nse wo 0 | sm 0 | 2 tO top vans, rw [me | sea mo ow | wim 2] 20 129 fnaessa—_fwrw [wr | nave mo 0 wl om 2/2 0 rae fnaese, |r mr | nse mo oe} tom = 2 | 210 9 anatsen frome er | nse xo 0 | orm =] 2 ta ananse from ar | sss wom | worm faas to | anaesea [rw [wr | nsvs wo wo wl wim 2[is wo | masse en fur | ss wo S| soos 2 fas 0 | waasea rm [er | ss xo | amo 2 [as 10 > naeso. ew [ee | ns somo | tome [as 10 > wanen (row [sw wo ml oi wo las 10 a aranes Ure er | anes swe | temo | tto0 ‘eo uasesa mt mr | 2n66 cw 5830] aso 5 | to toe avaser” fen |sw wo | ome is 7s ts ‘| eases |e aw ww «| wo is|as is “| aracer (new [ar wo | mi | aso a prser7 front Jor | 2nssso mo om) 2) 1“ araerza from or | 2nsss0 [se 8] a| tt rawo row [er | 2n0570 aos 15| 002008 | 120 proses frome we % 3% 1s 10] 30] ‘9 rosea fren [rt see ret woeacnanotasuiry ust wave fem for | 2nsrnn soe 0002 1 —_— Texas INSTRUMENTSTRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES = ———— aan earoeas ECTICAL GURACTORTS n Me rm BF] wuder ne Vom |e | a ‘nveassr — |ranasre Yeao Veso Pua fouvaint rte=a5re MWK @ te [MAK © a ma |v) ma wae00n fon or wo a8 | 20502 zavor—|nem or mo | asm 2 paves fnew [sw sow | 50100] 2 mavos few | sw no | 10000 = 10 | 20 faxav0s ewe [ow sow | sor fas 10 jaxar0s enw | sw mo 4 | 10030 © Jas favor jn ou ms] wom ot ast fares |e fou ed ee waver fren [re ‘SEE FET INTENCHANOEABRITY UST anasto few lw. mo 8 ww ol pant ime lw m © 0! wm 1/3 0 jaewo enw |sw m0 w| % 1/310 fers we [sw 0 | wo 1] 3 10 pars fone [sw © =| wm =] 3 parts fone [sw ~ © »| 9% 1/30 favs |iem for sw 150130] s0200 so | S130 foray ict [re | anssas SEE PET TERGUNGEABLITY UST nave fue |e SEE PET INTERGUNGEABLTY UST fanaeaa | for mo 10 o/s as | 1 as] aol a janae20 ler |e ooo] mm 10 fas 10] 100] a fawsrat ew [or | anarar 7 10 180 | 80300 10 [a5 10] 100) a jawaeaa | |u| 20571 m » 2| win 2 0] 750 fawseas din |r 20 0 0| om 2 «} 750) fnavas |e [re | anssas SEE FET NTERCHANGEABAITY LST fuses (cn re | anssae SEE FET NTERCHANGEABRITY UST rarst fram fou mo us| aa01200 ot 300] 20] fanaee et [ou mo 45 | toot200 at 300] 200 fanaa fou mo 45] saoiz00 ot 300} 200 faves fen [ou ee ee 200] 200] fmuases | for | anaav0 sw 700 | 40280 so | os 150 «| arse | [oe | axa uo @ =| 10 10 | 330 | 0} 0 fmavar nen for | avant wo © | 0030 = 10 | 350] 100] 309 faeavas en [er wines soppetaal [ise 0 700 fawaess mt |e | amas m0 132 | ame 8 wo} 139] fawaosa |e FE SEE ET RTERCHANGEABLITY UST fares dct [re | amssus Se fr semounoU ari faaese dive fre | anssar SEE FET NTERCHANGEABRITY UST aes [nc re | anssar {SEE FET INTERCHANGEABLY UST farsa |i re | anssar SEE FET NTERCHANOEAMRITY UST sess [new [sw “2 2] 4070 = | emo 1.39] —_— Texas, INSTRUMENTSTRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES TRAD RATINGS TECTRCAL CHARACTERISTICS 3 1" 7 Me re RemLACEMENT hee Vein jo | ue fonteamst —fra=25e oso Vex rue Sauvalent sre=28°e TaN WAX @ ie [MAK @ te] MIN | MN ow tmaslivy mar] Len fnaveo fur |sw wm 0 «12| om 899 | ao 146 faeavea fone or | 2naver wo ®t | 10030 © ot [25.10] 100] a fears fone or | 2navas gow «#0 | 00300 © or | 2510] 100) a napa fone [cr | 2navee go as a8 | 50800 © on | 2510 | 280] 50 raves [ove lor | avaves mo «| asosco or [2s 10| 250) 2 aves |uen [re | 2nanes SEE FET NTERCHANOEABLITY UST fauaver [cm re | 2Naea2 SEE FEY INTERCHANOEASLITY UST fanarce fc [re | 2Nae22 SE FET INTERCHANGEABUITY UST fncavon (ren |re | 2naear {SEE FET INTERCHANOEABITY UST face jue [re | 2N3070 SEE FET INTERCHANOEAMTY LST aor |wc (re | 2N3971 [EE FET NTERCHANGEABUITY UST favre wen |re | 263972 SEE FET INTERCHANOEABUTY UST ear (rew [sw | nstas mo | aso | 200 fava oom [sw | nst33 ao 30 | 5520010 | 3 200 anaes fem [sw | 3139 3 = 30| as00 =o | 209 fanaers—|ueme [sw | 8193 yo 30 | 55200 «=o | 3 20] faxoor7 [ewe [sw | anaes ms wo] a sla s 1 nave lene [sw | 2nzva m3 wl s|as 5 } fausv7e own sw | 2Namae wm @ —35| 20 sis 5 1 feaveo few |us | 2na000 SEE UNUUNCTION INTERCHANGEAMUTY UST favor en [or | anzaie woo | wim | «190 230 fanaosa ems [or | 2Nzzta wo 5 wo 10 | 4150 250 faxcvea [ume fur | rs52 m » | » 4 309 famavea flew Jor |r m 0 | 4 rs) faxaves [rem [ar | rs0a 2] a ‘209 fansoea rc re | 2navea SEE FET INTERCHANGEABLY UST fauavea fren |re | 2Na904 SEE FET INTERCHANGEADRITY UST Fmuane fon [sw | 2ezoaaa ‘oS vo| 20] Faxaoor [ewe |sw | 2navasa 1S a») as favaooe vw [sw | 2vavusn wm 333 | 33 fuaoe fone [sw mm 0 8 #| 2 uot [ewe [sw mm» | 13 fawonr— (rve [ow 350 | 13 fanaoia—|wew |sw | axaora yo] ais 100 209 favor few [sw | 2Naore mo 50] soto 100 2x0] fawwois few [ou | 2N3380 jm «| rasa | 2s 50] 125] 200 fawore rw [ou | 2ns050 wow | vases 1 [as s0| 198) 209 Jew Jou | 2Nsas2 oo © ~—m| twos “| uate iene [ow | 2naas2 ™ © 100} | uote few [ou | 2n3350 mss 250) 50 ———————————————————— —————— TEXAS, INSTRUMENTSTRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES ———_—_—_—————— Me EATS] icra: GumAcRENS 2 " he vere B nuduan he Youn |e | sauna canmatst = |iq=25' Yoo Yao ee rouvaime ere=25%e WN MAX @ te [MAX @ | MN | MN my yw marlon twas] |v jawscao few {ou | ansas0 40 sas | x00 =a |.25 10] 250] 0 uucas iene lou | anaaso 400 @ © | 10035 © at |'23 10} 100] ao] fswoaa mw fou | 2na350 wo 0 | aos = | 250/250] 30 fanaa fee [ou | 269950 wm 4s as | 25080 © or | 2810 250/39 fanaooe fon [ou | ans050 ao 6a | 100s or fas 10] 100) ao fawaoas fone [ou | anaaso ao wo] 20800 «ot | 2510] 280] sol jzwsaas ome foe | anaoas wo wo] atm io] sta 109 fawaay ime lor | anaoar so | wim mo] sso 10 pe | at { fnwcas lowe Jor | ansoae ww | 10000 10] 1 a 189 anuaze tow |e | anaoae go 0 00 | 10030 © 00 | 5500 120 jawwoso owe for | anuozo wo = wo} aim] 1 tm rs) faxwoat fone [or | anucat so ew] worm co | sm] | te fawosa ion for | anaosa wo ao | 100900 oo] ta 20 fmucss imme for | axsoss 0% = 0 | 100300 00 | 5500 10] fnucse ime for | ansaso wo | ro20 © to fiat | 50] ao fucas ime lor | anzaso wo @ | 5030 = 0 [191] 150) aa fansose [enw or | anacoo “ws | aba 180 a jauosy ine Jar | anavou ww | 50280 150 «| jawaose —tncw |e S28 PET RTEROUNOEABRITY UST fawooe |e [re S28 FET NTEROUNOEABULTY UST Ee fawaoaz wm [ou | anaceo wo «| 20040 fast 200 zveoes wm Jou | anscvo wos us| mom | fast 130 jawou |e [ou | 2naceo 40 @ =| 00m a fas 209 jzvwoas |e [ou | anscso wo ss] sm) fas 120 waoae [wow |sw | anaroe wo 00 | 0180 100 220 woe tN sw | anaras wo 0 = 0 | worst 250 aswosa ime lar | anaose wo = | 10000 | yo anuose ime for | ansose pao} fe 20) ee n20]|eracsecl eect |(ezeetio) et fawaoso few Jor | anaoso mo | ates 7 10 jawsos dow Jor | anaost wo » x/ wm 1/7 to swosa few Jor | andoss wo 030 | wow = | 0 woos fren |e | sutra S22 eT NTEROHUNOEAMUTY UST Ee + fanaose fron [re | anaor SEE PET INTERCHANGEABRITY UST fwwos rc re | anaor SEE FET NTERCHANOEABMTY UST woes ren Jar | ansose 00150 10) 30 2» F fwaare fnew for “0 e fwoez (ror [re SEE PET INTERCHANGEAMUITY UST fawaoes | re SEE FET INTERCHANGEABLY UST fawwoee = 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50] so] a0 ! Janei24 MPN |Sw | 2N4t24 30 40 30 | 120-360 aia $0] 120] 300] uatas lon. 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(sw mts ts} aot fas te | 30) 30 anaace frome sw | anon soe ts] wwe [ae ~| fxanes fw [ow | mame v0 = al weave fa ve] | fazer cw |e’ | antco ster ermeuunotasuy ust cee ren |re_| Sutco St re nexchanoeasay UST znaaer frome [or | ansose 030 M0 | 4020010 naar fw [or | areas mo aw 10] aoa 10 naara rw [sw | srapeo wo "0 'a| sim = to] 2 wo ‘a faars rw [sw | stapes mo © is| im | 3 o ‘ee foc uon (re | ansnsa, site wmiouvouainy ut anaaos —fuor [re | anaven see Fer pmeRCHANGEAMNTY UST oe uct re | Inavst SEE FET DMERCHUNGEASLTY UST masts [me sw 2 a] wie |e m0 re masse fue |e | anata set re ERCHANGEAMRTY st het Hl nwa Yuen [re St eT nTERCHANORARATY ust mutes (re | ancuse Sr Pet NTERCHUNOEABUITY UST user |e fre | use SEE eT TERCHUNGEABLITY UST anasez fren [re | 2Naooe ft eT TRCHUNORARLTY UST oy TEXAS INSTRUMENTSTRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES 348 Ten TNS TCTCAL GURACTERTS i " he ree sence fee Youn |e | nan Tonner — |tanas'e Yoso Yoo 1 OUIVALENT ete~25% TN MAX ee [MAK @ te] mm | Me omy) toay|ovr ims] fn muses frew_|re | anaooa $88 ET RTRROUNOEABUITY UST russ: [wc [re | anier S25 ET NTRROUNOEABLITY UST fauas2 —|inct |r | anteo SEE PET INTERCHANOEABLITY UST fuss fren [re | ontet SEE FET INTERCHANGEABITY UIST fanease ow for | asrasor wo 0 «| soso | 1 1A 100 fanaass wr for | asrasor wo © | 100400) to | tt 109 fawaass —|mw|or | asrava7 mo 060 | soz to] tw 109 faneas7 wr jor ’o uo ao | 80000 = 0 | 8 10|t00| fauasse (rw or wm 20] wx 10] s 10] v0] a russe |e [or | anarve ao as as | sou = aso] 0 aus foc re | astaaea SHE FET INTERCHANOEABUT UST fase frou |e [SEE FET INTERCHANGEABLY UST | faweaea fron [re {SEE PET INTERCHANGEABLY UST wasea—|en or 0 0 | Vos =r | 2 10| too} ae fuses [wen [or | anzasa so © | 100500 = ot | 2 10| 00] 0) zneats [nen [oP wm 4% | soso | 2 10] 100] a fuses [ren [or | anzaaa ere nn ee) fuser on [sw | 2nacaa 2 12 12| 0100 to fist away nen for | ansna soo 170120 | 20. af aye 22) sf fanaser ca fre | ataser SEE FET IVTERCHANGEABUTY UST faveara wen re | ancora SEE FET WTERCHANOEASLITY UST fuses |ucn [re | anaava SEE FET INTERCHANOEABLITY UST fmuas7—|wew [ae | anaasz 0 4 | a8 40} soo) aus |wen [sw | nsit0 a0 wo| soso so | 4 130] 20] 200] fawasor (arm [ow | nsivt mio «0| wooo iso | 4 140] 40] 2a) fusce fone [sw | asravo7 no | 0150150 | 4150] 90) 39 fwuucs—frve [sw | astav07 30 4 | 100200 © 150 | 4 130) 40] 200 fawuoe ene |or sw 00 | doz | ts 10 209 xaos (ow for sw 0 00 | tos to [as 10 209 prusos |e for cov 8 | 01000. | 20 129 fzweaor few |r sw eo |mozs so | 20 189 fzneaor jen [or | anasor mo = 50] sou | kt a fananio [en Jor | anasto mo 00 | count | tt rr aatt fone | wo 152] 3 rr fasta nw foe wm 4 —0| 10050 = ot | 210] 120) a fanaaiza one [or &@ | 0050 =o | 2 0] 120] 20) fanania |r [or | anaves wo 0 | ros 1 | 2 10] 120] 20 fanasiaa one [or | anaves im © | eos | 210/20] 20) ana me lor wo = | soo = | 210/20] 20) masta fone jor © | soo =o | 2 10] 120] 20) EEE ESE Texas INSTRUMENTSTRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES a SR SRS " ad Me ve i ; m | van | Se aon on ie Savane 3 ste=25re MN WAX @ ic [MAX @ ic] MN | MN om wm tosslivy imal fuiis ow [or | anes w 0 | wm o|2 wl wl ad cica owe for | Res | owe 613 elas) BI a str re wmcuunoesoure ust Prue |r [re | hacten Set rer ecco is paar Ivor |e Zee oT HTROUANOEARTY ust rate ow [Se 2a eT oa 10 | as x vector [ow m = pls” iS S| aeaso few [ow rr 22 Js aan few [ow wow a) aw] a wf] ad pus few [ow = © ul wo s/3 3) | 2 fawess—Iper |w| anus = = -s Fact from for | ont ool mse 813 BT faeuas few or [morn ve w| wae aa] a frase farm (er | aura om = %| om 2 | frase [rw ler | ue ae = nacae’ ftom [ow | arse m © | Bim sla wl "| a fwaasr [em [or | asrzzaa wo @ 30 10030 150 [22 150| | aa faucet Jor | Seas w oo ol “ome [IS ‘0 ieee ew Aor Ww om S00 | voor | 11 x races (te [ne aster nomenon it aces Ivor re tar rv emmcunououly usr Fey Sart nemouanocsanr tot mass (hen (te Set nescuanoesony toy uae fhen [ow a i | {sd "| faeuso ew low | masw | aust ow fow | none 3 a] siz 8) | 3 rasa |rop for | aaveea 2 sl ewe BT a] cs (rw [ow | arom is aie" [a 3] ™| a faaast rw fur aa Sez UNWINCTON RRECHONGEAUTY AT faacsz (ost |u| aucse Se omuncrow ntectoncoanr” tat frasss ose [uy | pues Sz maincron ramcanouasry st fraase fur [ov | aanse eerie 1 x4 fnaass |e Jou | mass «wl = 7 rs fauese | (re | ase sare nmmcuanousuy cat auasea Wen fre | aucesn SS re nrencnnoceanry ust feast’ ye (re | pues Se ret nnmounceaar st auasza oon ee | anesra ter ernmounoeanthr ust east fen [re | ane SS et ervcunoeauy ust fawasea | re | esta SS mt hemounoosurt ust awese’ foe [re | csr Eee MSoTANCesaY Ost ————— TEXAS INSTRUMENTS 345TRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES EEE aT SR SRT 5 2 we rE REPLACEMENT, we Verio) e t nuns j ‘orncanest —[tan25"¢ Yeao Voto anal aise rc=a8 an Wa fw | my 0 tmaslivy tas Jy Puasen —|rcr fre | aansra srr nomcuncesaty ust Panss, (oon [re | aso $2 frmecuvouay ust mica (ven (re | ananson iS remaconousar ust peat (ten [re | ne iE iremaconouanrr ist a" | faaenia” or |re | anana 2a mT emecunoeanthy st rama fue |e SS rv peecunoeary Ut Beer oes |e SS rr tomcunoeury ust Pacer yon [et $3 et rectanceaytst i} fears ew or [an ta waancnon eoRlANOUSATT UST Peart ew |u| auc $2 srumenon norscianoeaar st pec eo [ow MANET MNT Ao Lan | | 0 awe foe [ow elem fo] | am are few er | aura ™ =e zal rears ew (ae nas > 3 3 za| ta ase ew |e | mate m= 3 & a) pass how [ow BB BI wooo fas | ™| | = fae few ow me ep wwe fst eee [oo eee eer fee [oe | nauen sare ermenanouaiy ust races fen [re | cer iE ir neecunooaurrst |_| fans or [re | ness cer enmcunoeanT oT ramet foe fre | neu SSru eemounooury ist ewes ven (re | nee SS rv enmounoeuury st Raaes en [we [ease $e mr nnecuanoosr ist wan Yow [or [aster ml x [se =e pee (me for. | aster Bo ele ']3 8 2 pm |e (or | Seas me S| Bao ww [ssw] | oe Pat frse_ [or | naar sf nuentron nN Ut For a ry Tex UNUARETON RIERGIANGEAA Ut pars fose (tb | aes $e unuunecnon nsclasoes st ps ose (iy | ane $8 vanmenen nectuncean st errs (ome [ow | rvs se em wo |u wl | oo fume Jor | aso me ef ome fw ef | a one iow [or anne mS) em yt BS] | fae fas iow for [nae wy 1S 1] ie te | 4] | tm arse (lew [ow | mer ™ 2 SB) sm S| 2 8] fs mann fw [or | nsoon wwe a0} some | 2 w]e Fo ee ere SB wl em Rls Bl Al al a |roe [oe | inane =m Sl em ofS] | tm Pena (nw for ee ee eel (Escoretet ae |e ae Ei — TEXAS, INSTRUMENTSTRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES Raa RATIOS Tce GomAcTERTS BY) ude va |S | on j ‘on MaARST ase Yeao Yoo es tas Souvalaer Ma WAX ee [RK @ te vm { mm imaston ima! foe usar iene foe ee ee ee 20] fmusae fea far | anasr0 mm “0 ‘x| win 2 7 fmueas fam [ae | anasro mo 5 wo] com 709 muse iw [ae | anssr0 ee) ee) 70| 709 murr |e [oo | soa 0] 309 nurse nw [ou 0 | x20 1 2 309 purse (nw [ow oo 0 4] soa = | 20] 309 music — |e fou 0 | 20 20] 309 Imusar nw [ou 0 «| sao 1 =| x0] fuse |e [ou 2 | sam 7 | 20] favre from foe | asraise m w w| win i0las 10 “| fawras fren for | Asraies mm © | wim 10 | 25130 Pr) fares row [or | asraaza zo 040 | 100300 150 | 28150 «| usar tow lus {SEE UNUUNCTON neERCHANGEABLITY UST puss few [us SEE UNUUNCTON TERCOANOEABUITY UST puss few fs ‘EE UNUUNCTION INTERCHANGEARUTY UST a all fawerss fron [or | nero mow] como | 3150 229 fuse rom foe | asraaze mo = 30 | tem = 150 | 3150 220 feuvss ftw for wo =| osm 10 | 3 ts 220 ues7 ime |e | ansaso m » »| m0 2 20] nurse [eww [ar | anaaco ™ » »/| 200 2 vo] russe iene |i | anaaeo m™m » | 20 2 ta fmusco fran |e mo = =| 10390 =] 710 2) fares fren [or so mo} tom =] 10 229 fawwrea ren [or wm | tos 0 | 7 10 229 muses tan lor so m0 | tom 6s] 10 250 russe — lew lor | anwose m 2 | wim ‘0 |% to “ ruses fone for | anaase m 2 «| wm 1/4 10 a fuses [own [or | anaror 20 | s0200 «| fauver —|uew Jor | ansror 2m © 50 @| 100400 pr faves |urw for | anzror 2m 3 © 33| 4020 a austen for | net10 mo 0 | ant 4 1% Es) faus7> [row [or | asraaza 200-0 | 1000 10 | a 150 00 faust lone lee | Astavor m 0 w| wim io] 4 ts 200 fawsr2 lowe lor | 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soo = 0 |18 20 jausois, irc |re {SEE FET RTERCHANGEABLITY UIST fausoi fren |re | 2navea SEE FET NTEROUNGEABAITY UST fansoao ecw [re SEE FET INTERCHANGEABUITY UST fausoat fren [re SEE FET INTERCHANGEABLY UST fausoz fom (sw we 0 0 | 25100 © sm | 2100 sozs fone |sw tw 3a] 40100500 | 17100 fwsozs [new |ar | anas70 wo 010] as. 10 1] 139 ausoz [new |sw 20 | soso 150 | 45-130 fansoza fun [sw 20 30 100300 © 150 | 45130 fausoae—|uew [sw 320 1s| soi 10 | 2510 fansos0 rn [sw 320 ries wo [25 10 fansoat. urn [nr | anas71 zo 1s 10] 259000 fansoaz ume [ar | 2Na571 zo 15 10| 25900 soos foc re | AsTs4e0 SEE FET INTERCHANGEABIT UST fansouo rw [or | astaoas oss | oo vw |) so ‘2 soa ow or | Astanas 0 40 | worse 150] 5 500 109 fausoaz fon |r| 2naoa0 woo | aotso | so 500 10 fansoas [cH re | 2Nsous SEE FET INTERCHANGEABLY UST + fansous (rc [re | ansous ‘SEE FET INTERCHANGEABITY UST fansoa ce re | 2Nsour SEE FET INTERCHANGEABLY Ust fausoss ens [nr | anas72 200 30 1S | 281502 F ausoss |New Jar | 2na572 zo 15] 251502 * sass eww |sw | 2nacra wo 12| so100 ao fas. 30 59 ausoss fru sw | anoeae 013-15] aot00 ost fansosr fon |sw | 2naeae eG | ct eS et fmusose [wen [or | 2nsose Tw 900-300 | 3513030 Texas INSTRUMENTSTRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES rT r aan aes | a STS i 0 he wate | vee ba Yau |e | faamerr—fynas a0 RQUIVALENT cm ae=as%e Ma WA ee [mA we] me | ae om) mailer omar] lo mses rm [or | ausoso w 20 20] sim nsoee jer | zusoso Shs rowan 047A 100K naoet ex | auzoet Sch Se rowe Data vooc ansosa ex | zusoua Sct et rowe DATA book ansoes jer | amsoee Sh $8 Powe Data nox ansos ex | Busooe ex; e rowen Data book nsoes fw sw fo as ts] soi = 0 | 23100 ss soos urn [sw | anassza = 2» 5 e | fsore wor [re | avanne $5 Fe eTecHaceaaaY usr sore trem lor | annae “0 | oom 10 | 2190 aa fxsow [wm lor wo © | mom tw | 3 tao ‘ee soar ew for | xcaee mo 7% | tow 1 | 2 To] 00] cn Jansoez fren [or | anzane “[ 0 | oom 1 | 2 v0] 100] ooo aos ve [or | ansoes 0 | twos 1] 3 t0| to] “a racer ve [or | ansoer so 303 | soem = 1 | 3 tol aso] aa faces frome [or | nore ao 3s m0 | somo 1 | sto | 350] 0 fasore fren [or | rare m0 90-8 | sao a fnsres went [re st rer porecounoeanuy ust marae uct (re fr et hrexcranoeasary Uist nsios |e [re | asne See Rrmcrunoeasay UST Fsios fren for wo | om wo |i 20 Hmsier few for 0% 30| imo two at tao 20 fmsiia fron sez et ascounotanary ist fasts fron ft et NTEROUANOABLTY UST + foie ree [re 2 FT NTROUNORAMRITY UST msriz Ime [ou ious as | 100900 ot too fst iw [ou a 3 8| tom toy este me. [ou oo 8 8| ‘emo ES fnsizo Ine fou moss | oom mr fmsrat Iw ou xo) s| imme or | asiaz me [ou xs s| oe usias ve [ou s —'s| wom fmsiae Ime oo oss | vom mr 709 maize Ime [ou wm i 8 ‘emo top jansias jum far | nave zm » | mo “la 10 29 fnsiar rm far | ne Ee ed se) te fasts row [ur | anaes mo sa | asa wo | as wo rs] fmstze —Iuew || ances mo os a] ass tao 229 fnsigo mm far | uses zm » | wa ‘S| ‘te Za) ausist fram [or | tase mo s| eo =f tte too TEXAS, INSTRUMENTS 340 INCORPORATEDTRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES cr "aa BATINOT TCTCAL CHARACTRLSTCS 5 0 " Me Ty ‘REMACEENT, te Vea{sat) ej UME ORNSAmST —|t,=25°¢ YoRo Yoo. ‘ite yeuvauneT ere=ase TAN MAX @ te [MAX @ te] MN | Mot jm) (¥)_ WM) mma) |(V}___ (may 5) musta ew |r| ansast 2m 2» | wo wl 2 10 0) fansiaa rm Jor | astazoe mo 2 © 8| ato = tat 2 fansisa rma |_| asras0 me 818] wotso | as as] nsias [wen [ar | asta7o8 m0 908] S0d00 = | 1100 | fsise [ew Jor | ansasr mo 020] 2000 180 [as 150 “a fansisy nn or | 2Nsus1 mm » | 24 10 | 25150 2 BM zesise ——frwe for | Astaose m » wi wm 3/3 0 >| austsy fone [sw | astat26 m 20 | @ tof a | | x swore [sw wm 6 s| ow la wo “op fausiat fon |sw_ | anaaca mo 086] w} 2 10 20) fausiaa fone [sw | Asraous yo 202030. o|s 9 10] fanstaa fone [sw | asrosaa mo 00] ols too} fasts (ren [sw wo 00 | wots 00 | 2 too 209 asus uw |W eo 50-30 | sorso = 100 | 2100 20) ans Ineo |e SEF FET NTERCHANOEABUTY UST wsise [wen |r SEE FET INTERCHANGEAMUTY UST frsiea (ren [re | ansaae {EE FT INTERCHANGEABLY LST usiza Jeon [or | arisiza mo 2525 100s = 10 |.25 10/100 usta fw for | 205550, ao 73] aw =] 9510} a0 faust7s |e [ar | 2N5s50, 30 199100] ast 10 | 9510] as fusize [ren [ar | anssso 3001390100 | wos 10 [9s 10] 140 aust7 |New er | 2Nas72 300 «3-2 | 25a = 3 | 410] 28] 00) ausieo fnew er | 2nas72 wo 015] 202000 es usiey [pen [ar wo as Ea 1 | fasten row [or 108s z 7 a] fawsies ren Jor | anvse m8] os 0 no| “a fawsiea em [or | ansose 500 v0] to 5s fansias [nen [oP w v0] 1 » x fansies [ren [ow x0 10 as wl a0 ausiez fun [sw wo 3s » was 1 fansigs——|wew [sw | 2nasa7 ~ © as 10 |S 150 fanstes ew |sw | 2nav24 w 60 1% Naa leases fansiee (cw [re “EE FET INTERCHANGEABLY LST fansier [new [re | anssas {SEE PET INTERCHANGEABLY LST sive fnew (re | anssua SEE FET INTERCHANOEABITY UST fmsise [Ne |r| 2Nssar SEE FET ITERCHANOEABLITY UST —__|— fnsz00 (ew or wo 20| somo | S50 900 fear rm for wo 20 | 75101 | S50 a9] exon four lar mo 25 | oa? ‘09 fanszor [wen [or | 2nsa0" ao 5-80 | 10030 = | 7 t0| 150] 29 _t aL 360 TexaS, INSTRUMENTSTRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES Aa RATE TRCTCAL CHARACTERS i 0 y rm scone on Veen |e | une, connmanst —|tq=25"¢ | Veao Yoao the ruvae ste=28°e TWN MAX ee [MAX @ le] MN | Hw nw) iw tray]oy twas] Lwin] ansato iin for | ansaio mo 0 50 | 200400 fauszie pw far | ansaie go 015] 358000 janszao mor | anszz0 01815 | 20408 fansaat owe [or | ansazt mo 1s) 1s| 308088 fansaaa on [ar | ansza mo 20S | soN80 fauszzs pm for | ansaza mo 25 | Soa fawszzs —|new |sw_ | amore most | wou 10 fansaas nn for | ansz2s no ss | am fnsaze (mw lor | ansaae mo as as| e090 fansza7— wr for | anszz7 3008] som fansaaa ime lw 300 ss | 10 jansaa0— we [sw | anavasa wm 0 =| a fanszst |r [sw | ananeaa rr a fansza_ pms [or | tans mo 7050 | 25080 = fanszaza |e [or | nsos uo 7050 | 258m fauszas ren |r| mans 30 «| 10030 = 10 fauszaa (ome [or | nova wo wo | 50800 to zuszas. [wow or 30 | aoa 10 javszae ium ar wo 40 | 10 = pour fro few | 5020 2100 500 fans mw [ow [| so» 21050 | 2 100 17) fsa |e |sw 30 | 150900 © “to fiz to 450 fawszes nen [re | ansaus SEE FET NTEROUNOEABUTY UST fansaas vc [re | aNs246 SE Fr REOUNORART St fanszar [cw [re | ansaar SHE RT RTERCHANEABRITY UST fausasa |e [re | ansaue [SEE PET INTERCHANGEABLY UST sas |nw lar | rapa 3700 | aoa = 2 Jas 10] 400 fnszaen |e [or | ropa wo 70 | ao = 2 2510] a0 fnsasz row [or | ansose “yw 30000 | 40120 100 | 1 200 FA sass ftw lor ‘rw 0 00] 00250 | 1200 > faus202 fens for w 75 sa | ae wo | st szas fren [re Serf pemcUnoeAY ut fusnee fren [re SEE FET NTERCHANGEABRITY UST suey, fre |e SEE ET INTERCHANGEABLITY UST fauszse fret [re SEE PET INTERCHANOEABLITY UST fauszeo rch |r SEE FET NTERGUANOEABLITY UST — + 4 fansa70. ncn re SRE FET INTERCHANGEAMLEY UST lansar2 nm sw mo | 0040 =o aso a] fausa7s nm [sw mo 2513 | ‘3090 1/2 9» jansarz |e [re SEE PET INTERCHANOEABITY UST TEXAS INSTRUMENTS 31 INCORPORATED‘TRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES T TRAX RATINGS, TRECTRICAL CHARACTIRETICS 3 w ad Me re seACeMENT fe Youn |e | nun formant — |tq-28"¢ Yoao Yao Ts rauvaiset ete=28% TWN MAX @ i [MAX @ te] MN | mn (ow ww tmarlivy omy] on janszre |e re {EE FET ISTERCHANGEABLIY UST ens |ew Jor “sw 40 00 | aos = | ss us fawszei [ewe or | ansese vw 75 10 | 200 01 | 20 2 fanszea few or vw 325300 | 202001 | 210 2 {|__| _ leur [sw sw v2] aio 0 [azo 09 wen Joa, oo 255 | noma = 2 | 14 200| 2000 New [ox | anssas og 2s gs) mesial ox Inn [Dx] ansszs wos | mre fia mom} new [oa ow | a2 [ta 200] x faussoe ums [Da | ansezs pre’ ee se ed fauss0e | [Da | ansszs wo 4 | mem = fia mK fausao |e [or | ana710 wo 70 | wot ot Juas 10] as faxssio ww [or | anavar wo 7% «0 | om ot [zs 10] 0 ansaid or | ns9a a0 70 30| 250500 ot 125810 nssza few |sw mo 2% 12| 080 1[2 = to) fuss few |or | anaes wo 525] wai wo as | 2 fansass [row |or | ansoz moss | 00m =o ass] a0 usass eww or mo 25 25| 250800 © | 2s 30 | 200 ansase fc (re | ansase SEE FET INTERCHANGEAMRITY UST aussso——|nc [re | aNsase SEE PET INTERCHANGEABLY UST fansaeo vc [re | ansoeo SEE FET INTERCHANGEAMUITY UST fanssor ncn [re | anszet SEE FET INTERCHANGEABUITY UST fansoo2 nc [re | ansoez SEE FET INTERCHANGEAMLITY UST faussea ncn [re | anses SEE FET INTERCHANGEAMITY UST anssea [wen [re | anssee ‘SEE PET RTERCHANGEABLITY UST fausaes fon ar | 2na700 ‘0 40 | aotz0 «= so fas wo] asses fon or | anszoz oo | 10000 «= so fas] musser fone [or 0 =o | 250500 = 50 | 250/200 fusssa |e or | ns110 ao | como | 80 220 sso |New [or | nei so 4030 | 00300150 | 3150 259 fusaza— few [or | nsit0 mo 4030 | 00400 so | 2150 259 fevsa71 |e [or | nsitt mo 4030 | woes | 3130 250 fawss7a wr [or | ansass moo | worm is | 9130 120 fanss73, one [or | asrzso7 mo @ = 30 100300 © 10 | 310 rr) fansa7a one [or | asrzso7 mo @ ~—30| 200400 10 | 3130 129 fanss7s for [or | ansua7 mo 40 30 | dow igo | 3130 180 fansave | for | ns07 oO] woos ot | 2 120] 309 fawsa77 | for | nse so | om oot | 2 10} 309 ansave mw for | astaose ao 030 | 10000 =o | 2 120] 209 jansa7e |e for | astaoso mo | wom ot | 2 100] 209 _— 342 Texas INSTRUMENTSTRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES ee aaa SURES 1 m . TYPE 5 ‘REPLACEMENT oe Vee {sot) e t NUMBER ‘onneamst — |t,_~25°¢ | Veso Vero Vote Seise roma wae | oe) om | ‘mmo nas} vy tna] [oe sown fren few | arom so | ww la wl | om reset few {ow | Asoo se 8 8/8 OLS owl | mss (owe [ow | Araros wom seas te) | moses pw [ow [Azores ie | ome fase] | oF Se eT RTRCHUNGEANATY UST noon foc (re | sr SS ter nrecunoeany st frost |e (re | aser Se et ensues ust fae por [ee | moe SS ie nmecuoceany ist laure or re | asen tar ref womcounouany ost ome ten |e |Zases ts er iwmcusoen ost ose ten Ine | Beoe omar iemcoeceaary ost nore |r fre [aoe Se et nme Ost Insore few [ow se [a=] fae Presse [ee | aso Me w]e Bl of reat nw for | nowe ie te e{3 8 Slag feats frew [ow [aeons wes x(a 8 lew [ow | neras wee ma Ine for. | noose ae) 3 " Ine for w ie 3 uj fone [sw ir ee ee lew or | ars = wl) om «|e = fom (3 | Soret S $8 Slee S/S fama for | ares @ 3 Bla 3/3 s re for ter eANNGON NTBUNCEAITY UST lear lee tat nmaciunoeany st Nes |e Sgr emmcusoear ust ne |e iin tmcnncbenrr at Ine [oe | ase So TT a0 ao fas oo] | ey Daas Ine Jor | sua ~~] mim wlan] | oa fue fw Jor | ses % 8 Sle S18 al |g frie est lor | ausse 3% 8 Rite S13 asl |g asisr—fm (oe | cn 3 3 8| Sm S17 | 18 peas fen Jn | panes Ser eGunoeauY st Beis et me | Sass SS tn trecusoeurr ust power (re [ais ig mecmcuncoeur ist reais foe’ [ow oT Sim | so] | a fasase ow low i er er fmscsr |e |r | nonss sare nrwounocanat ut eae hen me | nt SS te temcunccwnr ust sae ten [me | Femt Steer eecunocany st TEXAS, INSTRUMENTS354 TRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES —_—————— ASOAOM BATHS SECRICAL CHARACTERS 3 0 " Me re asacenent fe oe Nuno fornaarst — |tq=25"¢ Yoso Yoo ie oUVALENT temas MAN WAX @ te [MAK @ ic | mn | mn tow) ov) mai] v)__ (mad ct zusaso rc |e | ansaso Ste PET INTERCHANGEABUITY UST set ro fre | 2nsast SEE FET INTERCHANOEABLITY UST fusesa foc |e | ansaaz SEE FET INTERCHANGEABLITY UST ausass fro re SHE PET INTERCHANGEAMUTY UST fansase frm [re ‘SEE FET INTERCHANOEABUITY UST jansass foc re ‘SEE FET INTEROAANOEABLITY UST fansa7t row fre ‘SRE FET INTERCHANGEABLY UST fansarz fr fre _|_seerrammouncesnuy ust fawsara fren [re ‘SHE PET INTERCHANOEABLITY UST jansara rc fre SHE PET INTERCHANGEABLITY UST fausars fect re {SEE FET INTERCHANORABIITY UST jansare fcr |e [SEE FET INTERCHANGEABITY UST fansaea cn [re | anszas SEE FET INTERCHANOEABITY UST fansass fc [re | 2nszus [SEE FET INTERCHANGEABTTY UST fansite | fre | anszar SEE FET INTERCHANOEABLITY UST avssos fect [re SE FET NTERCHANOEABUITY UST fanssos——|rcn [re ‘SE FET INTERCHANOEABILTY UST anssor foc |e SEE FET INTERCHANGEABLY UST nssos foc |re SEE FET INTERCHANOEABLITY UST ausson facet re SEE FET INTERCHANGEABLY UST faassia fren re SEE FET INTERCHANOEABUITY ST aussis fren fre SEE FET INTERCHANOEABLTY UST fanssis irc Ire | anssas SEE FET INTERCHANOEABIITY UST anssi7 fc fre | anssae SEE FET INTERCHANOEABIITY UST fawssta (ncn [re | ansser ‘SEE PET INTERCHANGEABLY UST fanssis inc |e | 2Ns04s SEE FET INTERCHANGEABLY UST fawssa0 [Nc fre SEE FET INTERCHANOEABLITY UST asst wen [re | asses SEE FET IERGUAMGEABLITY UST fawssaa (cn [re | anssas ‘HE FET INTERCHANOEABLITY UST favssza (cn [re | 2Nssa7 SEE PET INTERCHANOEABLITY UST fanssoa ca [re | ansous SEE FET INTERCHANGEABIUTY UST fanssas |i [oa | ansszs “OR wl 1 9 200} fanssz6 lew oa | anssz6 uo OK wl. 9 200] aussi cH [re | aNsuap SEE FET NTERCHANGEABHITY UST janssea ncn Je | 2neas0 SEE FET INTERCHANGEABLY UST janssas cn [re | anasas ‘SEE FET INTERCHANGEABUTY UST fawssas cn [re | anssas ‘EE PET INTERCHANGEABLITY UST Jansser ncn |re | assur ‘SEE FET INTERCHANOEABITY UST fanssis ecu |re SEE FET INTERCHANGEABLY UST fanssay——_|ncn re | anssar SEE FET INTERCHANGEABLY UST _—_——S—————————————— —— Texas, INSTRUMENTSTRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES ———— _ aan RATINGS TESA SURAT i Z " Me Tre ‘REPLACEMENT Ld Vests) e|* nua ouneatst —|t,-25°¢ | Vono Veno vite Savane tga ase ane WAX @ te [AX ete] mae | mn fom) yo may|ivy omy |e nssso frame for | anssso 30 wo] dor to | as 30] 20) 109 mssst_ fran for | anssst Er ee ed) sss |ncn [re | 2nsnar SEE Fe wrencuANceapuy UST fussse fren [re | anszer SEE eT NTERCHAN RARITY UST fnssse ren [re | anaen SEE FET RTEROUUNGEABLTY UST fawsssr wot re | 2063 SEE FET NTEXOUANGEABLTY UST jnsss ct [re SEE FET NTERGHANGEABUITY UST fanssez_ |e fre | anssas SE2 Fe eERCHANOEABRTY UST fusses cm fre | anssaz SEE FET NTERGUNGEABLTY UST Fassett re SEE FT RTERCHANGEABUTY UST fsses ct [re SE FT RTRCHANGEABUITY UST sss | [re SE FT RTERCHANGEABLITY UST fussay [row Jor | anaazia aw sw | wim | a 10 250] faussaz rw Jor | anaza2n sw 75 | 0000 50 | 2 to 2e0| fssia mw [ar sw 20 | asi to | too 139| sora |e re SEC FT BTERUANGEABMITY UST fuss (ocr [re SEE FT RTRGANEABUITY ST ssa |r [re Se Ft mTeRCHANGEABUITY UST fsese fran [re | nsra SEE FET INTERGHANGEABLITY UST fmseae |e [re | nv $8 fr tcunoeAaT st mses (rcs [re | vars SEE FT RTERGANGEARAITY UST sor |e re S€ Ft RTERGUUNGEAUTY UST fanseua Inc fet SEE FET NTEROUANEABLTY UST ssa dren [rt SEE FET INTERCHANGEABLY UST asest—_frew [er | anasro 1 0 ~~ 13) somo 2] fansesz em [ae | 2nasro wo 7 5| mam 3 20 fnsesa fren [re | tara SE FET RTEROUNGEABLIY UST sos doc fre | wars SEE FET NTERGHANGEABLTY UST fnsose [ncn [re | ansnso SE FT RTRCHANGEARUTY UBT Fansose frac fre | arson St fet RTERCHANGEAMUTY UST Hauser fran fre | ano SEE FET INTERCHANGEABLY UST fausero frm [ae | anasro 19 15] 008 20| fase (now fre SEE FET TERGUNGEABRITY UST sri? | [re SE FT INTERCHANGEABLY UST fausrie |r [re | ansoso SEE FT INTERCHANGEABUITY UST fasree om [sw a as] wim | 310 ES fausr7 row [ar | anaoro as s| a;4a 0 900 usr |e [sw @s i 13| sim 0 |e to tsa) fas |new lw @ 4% 15] aim | 9] | aa) fusr77—__|rew_|Da mo 3535 | aso TEXAS, INSTRUMENTS 365TRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES ‘MAXUM RATINGS TRECTRICAL CHARACTERETICS i * % re REPLACEMENT oe Voi |e | Nunes fORNEAREST —ltq=25"C Veo Yee. Vote EQUIVALENT erc=28%e MIN MAX @ tc [MAX @ ic| MIN | MIN tow) 4) fear ]vy (mat one lansr7e nen ]Da 200 4040 | 2800. laus779 nen Da 200-2825 | 5000. j2ns780 IN [Da 20 © 4040 | 5000. /2ns799 Jy Du so 75 | 40170150] 300 fawsro4 lwn Jou so 75 | 100900 150 300 laNs79s wen {Du soo 4 aa | aotzo 150 | 16800 fans796 Inew ou so eo | 10030 ©=— 180 | 16 © 500 /ans797 rc |e SEE FET ROERCHANCEABLITY UST lans79e lec fre ‘SE FET INTERCHANGEABUITY UST Jans7v9 lnc |r SEE FET INTERCHANGEABIITY UST /2ns800 lrcn fre SEE FET INTERCHANGEABLITY UST fanseot Ich |re | anaes Sr RIERA UT aseoa [cw [re | 2nssar ‘SEE FET INTERCHANGEABLY LIST rasa0s Ich jre | 2nssar [SEE FET INTERCHANGEABLY UST jausaio Ie Jor | astzza2 go 8525 | 60200 2/75 30 100} fansel pwr lor | asravo7 so 3525 | 60200 2/75 %0 100} anser2 New [or oss | 150500 a[7s 50 135} jansei lone for 500-3525 | 150800 2/75 500 135] anger INew Jor | astzzzz so 5040 | 0120 275 300 109 angers lene {or | asravo7 ed 2/75 30 109 fanser6 Jew [or | asvaza2 305040 | 100200 2[zs «0 120] 2N817 lee |e | astz907 30 © 50-40 | 100200 2/75 0 129] jansere Inew |r so 3040] 150200 2)73 500 135} fanssi9 re |r so 3040 | 150.200 2/75 x0 135} 'avsez0 lew [or soo 70 wo | eot20 2|7s «0 100] avsezi eur Jor so 7 | | so120 2/75 30 109] fanse22 nen or so 7 | 100200 2) 73 30 120] fanse23 rw |r 30 70 | 100200 2|75 30 120] fansez4 New [or 30-040] 60120 2 [12 10[ 4] o0) fanseas Ine Jor 30 © 3040 | 100200 2 [425 10} 100] 90) jausezs NPN Jor 30 30 4a.| 150300 a [2s 10] 150) 99) /aNs027 nen [or 3603040. | 280.800 2 |25 10] 230] 99] 25628 nen [or | ns97 3050 a | 400800 2 [25 10 40] 90] 2nsa29 Jone Jae | 2nz60 70 30 =| 20150 2 /anse90 Ine for | astazas 310 120-« 100 | 0500 © 10 J 2s | oo) /ansea1 nen [or 31014014] 90280 = 10. | 250]. fansea2 leon [or 310160 two | 17550 = 10 |.25 50 | 25 /anse33 Ine |or 310 20010 | 3020 «= 10. | 250] /anseas lnen [sw 20 1s | a 10 aNse26 Inn |sw sw sto} 25. 2 TEXAS, INSTRUMENTSTRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES cr aM RATIOS RCTREAL GRATES i ” * he racine oe Vou |e | On NEAREST lan2s°c Yoao Yoao. ee movant sre=a8%e Ma MAK @ te [MAX @ te] me | mn (oy aslo twas} [cn museay fnew aw sw | as 100 ouseat fnew |r 30 ©2010 | 25200 as Janseaz fue |e a0 010 | 2am 2s usecase [ou | ansaur moo] sor fawseaa [eww [ou | ansaso mw] e030 fauseas fram [sw wo 00 | 25180 «wo | 6500 209 fanseasa me [sw | asi ae 00 220 fawsast [en |e | anasva 2 0 ts] ao 10 0 }—— + fanses |e [ar | anasrs 20 | we 10 1219] jansess we lor | Astaoo0 70 =| Som 10 | 4180 fawsass me lor | Asraisa 70 © =| 5030 = ts | 450, faususr fone for | astiono 7m 0 = | 50m = 10 | 4150 fausass em [or | asrzaes 70 0 wo | 30000 190 | 4 190 j2Ng902 INCH | Fe SEE FET INTERCHANGEABRITY UST passes fect [re SHE FET ITERGHANEAMUTY UST secs feet fre [EE FET INTERCHANGEABLITY UST fansvos wow [re SEE PET INTERCHANOEABUTY UST fauseos —|now re SEE FET INTERCHANGEABLY UST faesvar | |e {SEE FET INTERCHANOEABLITY UST jansros |e |e AEE PT NTERCHUNOEABAITY UST paar for [re a wr remourouonty it T fausoio |r| sw 20 20 20| 2010 =| so 70 fase |e |e SEE PET INTERCHANGEABUITY Uist fuser |e [re SEE FET INTERCHANGEABLY UST fauseaa (new [er w 40-0 | 2500 90 | 2 10] as] ausea dnc re | ansous S82 Fer nencoANOEAMAITY UST useso [ncn (re | anseso SEE FET INTERCHANGEABLY UST fuses |e re | ansost S85 FET INTERCHANOEAMLTY UST fansesz wow [re | ansrez {55 FET INTERCHANEAMRITY UST fausesa en [re | anna SHE FET NORCHANEAMRITY UST fausest ems for | rsa 200, 20 | 150950 10 fansse2 |e lor 20 45| cooisso 10 fears (wm [or 200 m0 | 1200220 10 fzusore |e [ae | anario wos 5] 150000 © 0 | 2s 0/150] 0) fausese |e lor | anucet 4 a5 25| ts0000 © to | 2550] t30] tao faweooo |e [sw | Astana wo 3s 5] 100200 = 10 foe 10] 70] 139 faweoo ewe [sw | astav0e wo 355] wos 10 | 1 v0] as] aaa Jansoca fu sw wo 3525 250800 © 10 | oe 10] 75] 149 aweoos [mw sw wo 3525 250800 © 10 | 110 | 238] 280 soos |iew for | msi “oo 50 | 100000 = 10] oe 30 | 70] 189 Texas, INSTRUMENTS ar368 TRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES "MA RATIOS CTEAL CORACTRETSS 7 " Me nn saracinent ‘a Vou | o | va frmmamst — |ta=2s'e Yoro Vero ree QUAINT ete=a5re Ma WAX @ te [MAX @ te] Mn | Ha fw) vy geaslivy ions} [en lme Jor | asravar wm 0-0 | 100300 © 10 | v0] 8] as Inn lor @ 5 | 280800 © 10.0810 | 178] 145 lm jor fo 40 | 250800 © 0 | 110] 235] aso) wen for | anarn mm 5 25] 2000 10 | as 80] 280] leur [or | anaoee wm sts | ooo 10 | asso 280] ra IW Jor | astzaa2 sm $0 | 10030 © 10] 05.10) as) 380 leer Jor | asravo7 xo 0a | com §=— 10 [0810/90] 73 new for xo | 250900 10 | 0s 10/188] 200 “|= we or mo 60-0 | 50800 10 |.o8 © 10] 225] 120 New Jor 3-7 =| 100200 ©1008. 10 | as| 0s juror | astavo7 3-7 ~~ | 100200 «= 10 | 08-10] 90] 2s wen lor so 7 = «0 | 280800 © 10 | 0s 10] 185) 190 t fawsor7 (eww {or wo 70 «| 250800 10 |. 10) 228] 129 fansoar out |ws | arveoar SEE UNUUNCTION INTERCHANOEABUITY UST nsoae frat lus | Arter [SEE UNDUNCTION INTERCHANGEABLY UST eos? fone |sw as 50a | 25150 soo | S00 | 180 fwsore (or [or | anaoe wo 25 a5 | 100800 wo [2s 10 100 faweons —|uon |ou | anaeiz mo ss] ono) fast «| faweons ow [ou | anavia wo 4s a5 | tgoa00 ot fast r) faveou7 —|ew |ou | anavis mo 4s | ono ot fas ot a Faneoss ww [ou | anavve mo sas | 50a fast a fawaose ww ou | anaviz ms | wom fas a ‘awworo wen [ou | anavie moss | ts fast a anwar) |New |u| anani9 mow | tomo fst «| fwsora (new [ow | anavz0 re «| fansoar rut [us| Artooar {58 UNLUNCTION INTERCHANOEABUTY UST Fawagae rut ws | arrecas SEE UNUUNCTION INTERCHANOLABLITY LST janet few fs SEE UNUNCTION INTERCHANOEABLTY ST — + xonis fen [ws {28 UNUUNCTION INTERCHANOBABUTY UST aries four |us | anette SEE DATA SHEET ON 26116 uott7 four ur | anani7 SEE DATA SHEET ON 246117, stra rut jus _| anette SEE DATA SHEET ON 2N6118 | wong eur [ws SEE UNUUNCTION ITERCHANOEAMLTY LST fanerzo rut Jw SEE UNUNCTION INTERCHANOEABITY UST fweisr ror [ws SEE UNUUNCTION INTERCHANGEABLY UST aneise fet | S22 UNUUNCTION INTERCHANOBAMTY UST | fraare row [or | asrsose ‘00 300300] 20 ml 1 wl 2 29 rants [row [or | asrsose 300 | 20 zl 1 wl 2» 2 favazz0 Jpn Jor | Ts100 sm 200 200| 20. | 2 2] 20) 2 saa Ine [ce | nsio1 mo 10150] 20. n|2s | x] 9 TEXAS, INSTRUMENTSTRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYP! nd EACTICAL GUAT i 0 " te vee ed ‘ Youn |e | vane ‘cnraamst — |r4=25°¢ Yoao Vero tt FoUvAlaer ore=asre man Mao] MN | me | tow o_o 1m imay| | fwzz2 rw for wow wo] 752m =a Jas 10] 78 javezza one Jae | nav mo @ = w| 7520 © fas to] 78 fzwszza dem lor wo o| 1309002 |.ias to] 129 zwszzs |r for | rues so wo| 0m = [as to] 100 jmeur (ncn |re | anousn SEE FET TERCHANOEABAITY UST faneaso |e [re | 2Nsuso {22 PT INTIRCHANOEABUTY UST faneasi ew re | 2Noust {28 PT INTERCHANOBAMUTY UST isa feen fre | ase SEE FET NTERCHANEABLTY UST favossa (ren [re | aneasa SHE PET TERGHANOEABLITY UST fanesss |v fre | amuse S28 PET NTERHANOEABUITY UST sna ln |sw | onaa 35 30 nas Inn |sw_ | anes ee) 2 asa row [sw | onas ar ry 19] sa leew [sw | onze to 0 aN Ine |sw | anon 1 10 amt Inn |sw | anz7 1 10 anes lw [sw | anoe 100 N06 new |sw | anre 100 aNer Inew |sw | anrr 100 Neo New [sw | ano 10 10 — aswea rw [sw | anro 1010 Evry leew [sw | an7o 1 10 S000 een |sw | snr to 0 {ner nen {sw | a0 0 sa] aw 2 100] aoa Jun Jaw | are tots | ao 2 109] 7a Inn jaw | sna os] aw. 2 109] N74 Iwew Jw. | ana x0 50 F) Ea New |sw | ans x0 50 | awe lwow [sw | anre 0 80 x) aN? ww [sw | an77 aa) x ane new |sw | aura ™ 0 x| Eta ew |sw | an79 040 | ina Jw [sw | anv ao 5 110) nes ln |sw | onze 20 |. 3 fee ror |r SFE nrmUANORAMUY st Ed sw [anno 200 4 |_| swt Ine |sw | onin x00 r sno? lm |sw | antiy 80 | sna Jmve |sw | antoe mm # Nou fr _|sw | anor 3 4 _—$————————qoe i i __ Texas INSTRUMENTS INCORPORNTEDTRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES —— a TS momen cuneeane ———] i 1 as Me a ed ne Youn |e | oa ‘Serer |tanas'¢ Yoo Yao ime! Rovaieet ac=asre ant wae He [MAK @ te] me | mn tov ey _ ow smat|oy _tmas| [ty me [sw | nor xo rox [re steer newacranoeanaie ust cn fre Sex re nencnanoesaay UST ag 8 PT NTERGHUNDEABLITY UST Ince [re | mas SEE ET TRCHANOEABRITY UST Je |sw | aunio ‘020 me few | suti0 mo 30 me |sw | suti0 xo le [sw [ant ar le sw | aut mw me |sw [ani x00 30 Je |sw Juin Eee) a Jnw sw | avon ar) let |sw | suo xo} 4 me sw | Seror x0 2 fre |sw | Seto mo # a —t pune fae ow [anne m0 | puna aw |sw xo | ena ws Pe) ‘| ana aw sw [anno mo # a aur [mw [sw | aro 8 rr en sr |sw | aunt x} a paris lene ow | aunt xo a wig ewe aw | ann x EB ——| fo pew [ow m0 30 “| fiat ew [sw wo 30 a puizs ne. |ow to 30 perae——_|acn [re sere nemounoean ut feaas fren {re eT aTRGUNORARRITY UST swias den re | an Set re eoeRoWANOeABATY UST faNi27 Ine |sw 200 «020 | a) fanize fen fre | ane ser rer neeROHANORARTY ust — puede [ow [amo ar) igo fon (sw | anno a) puist fone sw | aero xo} persz |e [sw | ace x0 —_ fsa (ene sw | ance =e prise [me [sw [ante xe | Jamas fone. fow | Sse xo swiss me [sw | ston x @ 340 TEXAS, INSTRUMENTSTRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES EE ARID RATS ESCA GRACES 3 0 y Me re mRACNENT te Yew |e | none Crremest — |r-25°¢ Yeao Yoo ve Ruane ete~25%e TaN WX ee [MAX oe] Mae | me omy) marley tmai| fon ane en fre S22 eT RBOUNGEABTY UST Nae men fre | avaoe SEE FET INTERCHANEASMITY UST nao nen fre | anzor SEE FET INTERGHANGEAMAITY UST ana wow |re | suo S58 FET NTEROUNGEAMITY UST ren Iwew [re | ana SEE FET TERGHANOEABAITY UST 5 tas nen Jee | oniae SEE FET NTERHANOEASUITY UST anes Iron fee | autre SEE FET NTERCHAMOEASLITY UST ans ron fee | antza Sefer AMOUNOEATY St annar tres fre | onaoe SEE FET INTERCHANOEABUITY UST tas Jno |re | anaoe SE FET INTERCHANGEABLY UST fawtep rc re | ane SEE FET INTERCHANOEABLIY UST fiatso fren fre | ane SEE FET INTERCHANOEABLITY UST + am ans cw [re SEE FET NTERGUANOEABRITY UST nase nen Jee | onnas SEE FET NTERCHANOEABUTY UST avis fuen fre | anise SEE FET NTERGUNGEABMITY UST anise fnew fre | antes SE RT NTEROUNGEABMITY UST fawtas row [re | anise SEE Fer RTERCHANGEABRITY UST fess~ fren fre | anissa SEE FET NTERCHANOEABUITY UST vise fren re | anise S62 FEY NTEROUANOEAMTY UST fvtséa fren dre | aniscn S88 FET NTERCHANGEABITY UST sear jecn [re | antsy SEE FET NTERCHANGEABRITY UST sansa ren fee | antsra SEE FET INTERHANGEABITY UST ase fren fre | anise, [SEE FET INTERCHANOEABUTY UST nisea fee fre | anise, SEE FET ITERCHANGEABLTY UST fawn fr [oe Seem eemunoeaauy oat 40 Iron |re | onreo SEE FET RTEROUNOEABLITY UST wet ron Jee | autor SEE FET RTERCHANOEABUITY UST sare ron fre | ante SEE FET NTERCHANOEABUITY UST sees ew fee | antes SEE FET NTEROUANOEABRITY UST snes ren fee | anton SEE FET NTERCHANGEAMUTY UST fates rcs fre SEE FET INTERCHANGEAMAITY UST anise fren re SEE FET INTERGUNOEABMITY UST fer fren fre {SHE FET RTERCHANEABRITY UST ates leew Ire | axis SHE FET INTERCHANEAMAITY UST snes wen |re | antes SHE FET INTERCHANOEABUY UST ea7o deem fee | antzo Se fr nemOUNOUATY it asa Inc fre | awir SEE FET TERCHANOEABAITY UST sna 72 ron fre | antes SEE FET INTERCHANOEABLITY UST jaws fren [re | arnt SEE FET INTERCHANGEABLY UST janie fret fre | anion SEE FET INTERCHANGEABLY UST Os TEXAS, INSTRUMENTS 361TRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES eS ——_ TARA RATIOS EECCAL GURACTERTS 5 3 “ me es REPLACEMENT oe Vexoat) e|t wns ‘nveamsr — tanzs'¢ Yoso Yoro ite Sawai ten as%e Wa MAK @ te [WAX @ tc] mm | mae om) mar] tmas| |e ani7s aNi70 Se FT RTRCHANGEABLTY UST ane ane SEE Fe NTERCHANOEABLTY US eazr anit SEE Ft RTERCHANGEABLITY UST anne SEE FET INTRCHANOEABLITY UST ‘SEE FET INTERCHANGEABUITY UST 3Ni76 [SEE FET INTERCHANGEABLY UST SEE FET INTERCHANGEABLY UST SEE FET INTERCHANGEABLY UST SEE FET INTERCHANGEABUITY UST SRE FET INTERCHANGEABIITY UST SEE FET INTERCHANGEABLITY UST SHE FET INTERCHANGEAMUTY UST ‘SEE FET INTERCHANGEABUITY UST ‘SEE FET INTERCHANGEABLTY UST SEE FET INTERCHANGEABILTY UST S88 FET INTERCHANGEAMLITY UST ‘SEE FET INTERCHANGEABLY UST SEE FET INTERCHANGEABLY UST 28 | $586 | £228 | 855 | 8558 | 383] 8298/2883 | 3588 aa) aana|aaaa| aaa aaae| Saaa| aaa | ARaA| aaAA ana01 SEE FET INTERCHANGEABLY UST re_| nant ‘SEE FET INTERCHANGEABILTY UST ‘sxa02 SEE FET RETERCHANGEABLTTY UST 3N203 SEE FET INTERCHANGEABLITY UST ‘N04 SEE FET INTERCHANGEABLITY UST ‘3N205 ‘SEE FET INTERCHANGEABLY UST fana08 | aN208 ‘SEE FET INTERCHANOEABLITY UST /ana07 aN207 ‘SEE FET INTERCHANGEABLITY UST 36208 3208 [SEE FET INTERCHANGEABLTY UST fae anait ‘SEE FET INTERCHANGEABLY UST Te + snear2 anai2 SEE FET INTERCHANGEABITY UST anea13 ana13 SEE FET INTERCHANGEABLY UST | aware ont SEE FET INTERCHANGEABILTY UST nas aN SEE FET INTERCHANGEABIATY UST fanane aNa16 SEE FET INTERCHANGEABLITY UST fanat7 3217 SEE FET INTERCHANGEAMITY UST — 342 Texas INSTRUMENTSTRANSISTOR INTERCHANGEABILITY MASTER LIST OF NONREGISTERED TYPES —_—. RE AST TERCTRICAL CHARACTERS 5 1" " te ead oe Youn | @ | & caneamst — |tq=25'¢ Vero Vero Vite SOU ALze stem aste WN WOK ec [MAX @ ie] MN | mH owes vy mar |ivi mad oa jaause n |rme Jor | asrazas os 10 © | worm = | as 150 | agar |e [cer | asta7o7 ow | 080) ast | 150] al vas | |New Jor | astaiy m0 035s 23s szaste | lowe |sw as 0 50} om =m | 60 130] savor |n [new [or | sor 3001818 | 400800 2 “00 saeite | Iw for | asraaey 302525] 25050 = 2 jsaeze —n |nen for | asraove 340 25 25| 150300 2 fsaoste | fren Jor | ansaan 305050 | 80340 2] a | 120 fsaiste [nfo [oe | anseao 0 ass | tos 2[ 2s] 100 fsaize | |e Jor | anseeo 30 5050 | 180840 3 50] 100] sour fm [er [or | astasor 30 4343 | to000 150 | 4150] 138] 200] aseare | [new for | rs02 so 302 | 20200 * Em) sssare |v fron [ne | anaove mo S| ae [3 2[ 2 a0) faseste [nen Jor | asrases os | 150400 vias 4 “| jassore nfo lor | asraazz 30 4030! 150800 © | 1100 “o] faser | |ien for | asrazaz 30%) wo] worm =o | 2550 ool fassere | fo [oe | asrzazz mow] worm 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INTERCHANGEABILITY MASTER LIST OF NONREGISTERED TYPES TAI RATS ECTOCAL CHARACTERISTICS 3 7 * Ne rs E menacenent he Vow | @ | & en ‘Onneanst — |ta-25°c Yoo Yce0 oe Fouvauset 3 ere~28% TAN MAX @ tc [MAX @ tc] mnt | Mn al iw) wy tmaifivy may] | ot Jaoaue rc [nem [nr | 2naasz woo 4s us| wim jazoas fac nom Jar | anaasz wo 45s | roms fasaas fac nm far | anaas wo 45s | 2790 1 fazvo fac [nem [ar | anaasz ~ 15 faoase ac [were [ar | 2nas71 m0 5] som jaoaes fac nem |r | anor mm 35 | om iaoase fac new Jar | 2nas71 mm 1 is] so 3 faves fac [nem | ~~ 8 0] wo | 120 faoore [mle |or | astaoze aso | wor 00 | s 50 109| joo ac |iew or | anza70 w we} 7035 50 jaoars ac Ine Jor | 202270 mw] 7010 30 jaoot ac |e Jor | avatar ™ wo} asi 50 1a t50 faoais rc wen [or | 2x2270 1w as) 7030 30 jaonr7 fac |new for | 2n2270 w 2| «20 10 zone fac rm [ce | 2xaoz0 w wo| az 0 0 jaoaz0 ac [ww [or | ana270 w | 2 10 Fras refs Jor | mann ww =| em jassza fac [Wen Jor | 2n2270 a we] 70390 50 faoazs fac nen [or | 2n2270, w 40| 1200 10 jasar_—|ac ew Jor | 2ns0se soo} 4025020 fosus cw [or | ansnve w ws | 35. wl s 10 vo} jassar— fac Jno Jor | 2n2270 w @ ao] 25100 aso | aso aoa |ac [wen ce | anator iw 4s] 30100 200 | 750 oss ac [nen [or wo] 2stoo 10 | 5s 150 facasa fac frm [or ‘$00 150 1 ri ass fac wen Jor | ansose w 150 1 »| iaoaso fac [wn |ce | anaoz 7 70 | 40200 190 faoast ac [NN Jor | anator w 70 | 70350 130 faosea fac lowe [or | znaosz 1 70 | 35200 150 Haoase [ac nen Jor | avatar w | sor 130 | aeaer Jac |rew Jor | 2nzi02 w 1055] 5100 200 jaoses ac [nen or w 450350 | 40160 ” joos7 fac rem [or 500 as | 15s 10 | 2510 “0 jaoose fac nen for | anazz2 00 2| 7500 © 10 | 2510 Py jose fac [nen [or 00 ta} vasa 0 | 25] us| al jaowoo fac [wen Jor | anazz2 500 we] 7500 = 10 | 2 5] 73] 20 | faoaos fac frm [ar 300 | 100 200] | Yaoaos fc fone Jor | nos0 w 50] 3020 0 zou ec [wen [or | 2n2270 w so | 4020 01 | Jaouoa fac nen or | anaroe w so | 4020 10 |14__ 150 ———— 364 Texas INSTRUMENTSTRANSISTOR INTERCHANGEABILITY MASTER LIST OF NONREGISTERED TYPES —S— MAXINUM RATINGS ECTRICAL CHARACTERISTICS 5 0 ” Me ee REPLACEMENT ie Vente) | @ | ad OR NeaET —ltq=25"C Voao VeRO 1 ite QUIVALENT Istc~25"¢ MIN MAX @ ic [MAX @ ic] MN | MIN (mw) vd (may |(V)__ (may ma Jaourz fac JN Jor w 20] 40 0 to} J4oaia ac JN [er | anor 200-3520 | 20200 2 Jaoaia rc JPN [Rr | anas7i 200-3015] 20150 3 J4ouso ac {nen for | 2nz221 Ww 3025] 100200 10 100] 29] j4oasy Jac }wew Jor | anczaaz ww 40 ao | 125300 10 125] 0) J4oas2 ac |e Jor | 22222 w 40] 75-300 10 75| 50) j4oasa fac INP or w 25 | 145400 10 | 25 10 x j4oass ac tne [or | 2nza22 w 25 | 75:00 to }25 10 E) Jaoass— |c |New or w 18 | 168-900 wo] 2 5] 165] 39] j4oass = fac inp or | aneazaz w 8 | 75.300 wo] 2 5] 75| so} jaoass, fac inom or | anezzaz0 50060. 100-200 wo] 3 1s{ 7s] 139) jaoase = |ac inp Jor | anzzzz0 tw 40] 100.00 wo} 3 15] 75] 139] { Jaous7a Jac INCH |e ‘SEE FET INTERCHANGEABUITY UST Jaouss Rc INCH [FE ‘SEE FET INTERCHANGEABUITY UST J4ousea rc INCH | FE ‘SEE FET INTERCHANGEABLITY UST J4oa72 ac |e [ar | ns 26 wo 4s ‘40.170 1 J4oa7a ac Jno [er | Ts 26 wo 4s 40278 1 Jaoua Jac Iwo |r | Ts 26 04s ws 1 }4ou7s JRC NPN [me | T8126, 1 4s 40170 1 jaowe | iNew [me | nsi26 | wo « 27-100 1 jaour7—|ac inom |ae | nsi25, 104s, aars 1 jaoue —|ac |e |e | rsi25, 19045, 40.170 1 Jaoa7e | [NPN [me | rs126 os 40.170 1 }4ouso fac iN Jae | ns126 wo 4s 27375 1 aout fac [now |e | nsi26 104s 70275 1 Jaousz fac |p |e | ns126 104s 27-90 1 jaoae [nt Jowr | sw | stan mo 28 | 30400 afas jaoaare jn lene |sw | Astao4a mo 4085 | 30400 3) cist) jaosiz ec |wen |e | anas7i 20030) 15] 90150 3 19 40st Jac [NPN Jae | aNa571 20030 15] 90150 3 10] j4asiy —|RC NPN | F w 16] 20, ” 200} j4osa7 fac lene [cr | znsos0 w 55] 50300 oli 0 Jaosse—|ac tone or | 2x00 w ss] 1590 so] 2 500 j4osse fac |Nen cr | 2N2270 w 55] 1590 soo] 2 500 jaosa =| |e Jor | 22270 ~ 30] 35200 so] 1 190 [scss ec ncn fre SEE FET INTERCHANGEABLITY UST j40ssva|ac [ncn [re ‘SEE FET INTERCHANGEAMUTY UST j4os77 jc INP | RF aw | S075 100 250) j4os7e ac [nen |r | ana8e6 “sw 55-30] 10200 gs] 1 100 500} j4oset —|RC Inrw | RF wo 4s 707s 1 CS TEXAS, INSTRUMENTS 346 INCORPORATEDTRANSISTOR INTERCHANGEABILITY MASTER LIST OF NONREGISTERED TYPES HARUN RATINGS TRECTRCAL CHARACTERITICN 7 i " ” Me ra mace oe Yawn | o | ny ORNEAREST —[Ta=25°c Voso Vor ae fava ste=25°e TIN MAX @ te [MAX @ ic] MIN | MN (ow) vv tmay|ivy —_tray| Loin nc Jum | wo 4s 290 1 lnc |New |re | snr [EE PET NTERCHANOBABLTY UST Inc |wen fre | arant SEE FET INTERCHANOEABLTY UST ic [wen fre | anatt SEE FET INTERGHANOEABLTY UST fee wen [re | anatt SEE FET INTERCHANOEABNITY UST Inc New Je su211 SHE FET INTERCHANOEABLITY UST Jc Jnen_| we wo 0 ae | 80 700 lnc [wens [or | 2n370 w as] 7500 8 fc [we or | 2xa270 w al 700 0 lec [rnp Jor | 24020 w 7| joao 10 | 2 10 Inc wen Jor | 202270 w #5| soz 150 | 8190 Je [wen] mF 00 2% ES ec |wow [re | anaty {SEE FET INTERCHANOEABRITY UST In lone or | astazen wo a] SO s|as | | In |e |sw | asravos wo 2| wim =o | 210 ao In fren |e | Asts4ea S88 FET NTERCHANOEABLIY UST Im [are [sw | asrazza moo | sor 150 | 4 190/ 20| 200 In (woe |sw | asranaa ye 0 | 003 «= 150 | 4130 | 40] asd In Jone |sw | astas07 mo 0S a0 | 0150180] 4 150] 90] 0 Jn [won jor | 2naaoo mo 0%) | owt] 2 * —t Taaiore (nun [or | ancato mo 10 0 | suo 1/2 7 a ——— Vagsete ft fone for | astasor wo 10150] 30. i]s 0 2 jane | fone [or | asravos go's | 7m © | ia 10 a0) aire [a lene jor | asravoe uo 0 «m0 | 150301 | 410 239 soos |m fren [re | astsseo S88 FET INTERCHANORABLITY UST sours |r [wen jor | Ts9e O38 so] sco = | §— 10] 250) 0) oer |n |e Jor | neva jo 30 2s| waoraoo «= | 310] 480) 0) sizm —|n fren for | astsiz2 302828 | 100s = 10 |.28 10 | 109 Tszomte |n [um [or | astszon mos 90 | wom 1/7 10) 150! a0 sziote|m |wew or | Asts210 mo 0 «© «0| eso = 1 | 7 10/80) ol fsworr|n fone [or | asrsuco goo 190-120 | aatto = to | 210 20) 00 fastaoa | fone |sw_ | astaos as ‘a ‘mw | wow [as Tastaoaa | [rw |sw | asteoaa as © 35| sao [as 2 fasratea [a [nen [or | asraisa @s @ © | 10030 © 0 | asso F fastaisa ni jue [or } asrates @ =| wom =o as 10 rs Jastazza_|n [new Jor | asraazz as @ ~~ | oom = | 4180 250 fasrazaa [nfm [or | astm as | 010 10 [as 190 [Astavor |i |r Jor | asravar se © | 100200 wo | 4150 2x0] faze! (nt [new [or | Asvaay1 as 2835 | 2508002 Jastsania [nt fron for | asraaria ass 35 | 250900 2 ——————— 368 TEXAS, INSTRUMENTSTRANSISTOR INTERCHANGEABILITY MASTER LIST OF NONREGISTERED TYPES ARRON ATR i " * re nacunner rae j Serer fucave Yao Yao feunvatoe temasee mw) yw Jastzara_|n Jaen for | asraave as os fsrasoa |n fene for | Asrasoe a 4 fasrasos |n lowe [or | Asrago8 3 © © asrases|n|wow [or | astasas as ms as fasrsry | fon [wr | asrasr easy sles | er ancoo eenera 20) 120] Jastasra | oon far | Asrasra a 3% 3] mao 5 29] 19 fasraeae | fone [or | Asraase fas 202s | br nla 6 109 fasrassta fn lowe [or | asrassea a | 1m ola 139 fasrasea | ewe for | asrasee as 4s us| 0900 1s | 4 150) 100] a0) Jasrases fn fone foe | asraoes at 6 go] to9900 50. | 180) 100] 200] lasrazer_|n nen for | Astsvar sm] roowo | 1 't0| 0 Jastaroe | Jnen for | Astavon a | eee ta) fastaroe | Jun Jor [aaron es wel ass | two] a Jasrario |n Iw Jor | astaio as | moa] te] Jasrazss fn new for | Asta asm | soso = | 10] 100 fasraear | nen fre | Asraeat SEE FT nmencHanotAbuT ust fastaeza | Jue foe | asraaza SEE FT INTRRGANGRARLTY st Jasraeas | nen fee | stanza SEE FET NTERGUANGEABLTY st fasranza | |e [re | asronze Sf FET INTERGHANOEABUTY UST fasravea|n |e [sw | astaven as | wim 0] 2 10] a0] 290 fasravos |v ew [ow | asrovoe as a] to0900 10 | 2 10 100) 00) Jasraves In Jone [sw | asraves @s 4 | soi 0 | 2510 | 50) 00) fasraos | owe [sw | Asrapon «2s 49 a| 00300 to | 25,10 | 100) 0 Jastazas | |e for | Astaaas a @ «| wm ols 109 —|— fastacar | owe [or | asteoar sw] wi | mo 109 Jastaoae |r Jone for | astacae 2s @ | 00900 100 | sam 159 Jastoae [n [owe for | Astaoae as wo | 990000 | Sam 13] Jastase [nvr for | Astaase as | toot | 7 “10 100 fasts | [rw [or | asraoee | as» «| smo i]}7 w| « Jastaco | ow for | Astaoeo a we] ws 1] > tol fastoes fn Jone for | astaost as we] mom 1 | Ft] Jastaoea [none for | Astana as | wow |] to] tm fastarza [n fnen [ow | asvarza ase] wi 2 | a 20] oo] a) Jastaiza | Jaen ow | Astatza as 38] oa =| 3a] 130] 0) fastaras | ne ow | Asteras es we] soi 2 | 4S] so} 2o0 asters | |e [sw | Asetze es 33] moo 2 | 450] a0] 200 fastezae |e for [astezae as wo] afas wl wl a asta In |e for | astazee es @ — | 00900 1 | 3st] 100] al Jastazso m Jr for | Astaaso as 4 | worm 1 | 3510] 2t0] Sol Jastaaso | we [ar | Astaaeo wo 0s | io fas to 1409 ee -———— TEXAS, INSTRUMENTS 367TRANSISTOR INTERCHANGEABILITY MASTER LIST OF NONREGISTERED TYPES AS RATINGS CRIA HARACTETICS 1 * he re senaconmet on Veen | @ | © wane fonnaamt —|rq=25'¢ Yoro Varo ae fauvAine ste=25%e ane WAX @ te [MAK @ te] MN | me (ow) wy) tmarlivy car] domme fran fr fro [ee [ass =e ee Jastasca ni Jone |sw | asteaoa a = | orm 0 | 4150] a0] 180) Jastusca |n fone |sw | asreaos | roam = tm | 4150] eo] aa fastasce |r |New |r | asteaoe os) | wom tf at «| fastaaio [n fur [or | asreato ws | ow tla «| In Jaen for | astsose em 200-00] stow | tO 30] In wen Jor | astsose mo 350280 | so = | 1 m0 20] In fone or | astsons as “2 “| 0st | a 10/130] a In [ewe [or | astsoer ws «0 | asoaco = | 210 | 250] a fastsi7a fn |en Jor | astsiz2 @s 2535] 100500 © 10 | 251000) fasts209 |x |wew Jor | astsaon a = | room = | 710/190) m0) fastszt0 [nt |wen for | astsa10 as | momo | 7 10/240) m0) [astsare | [new [or | astoaie a 15| asso 2 [4 10/ as| 120 Jastsaz0|n fren Jor | astsnz0 1315] oso wo | S50] 30} 109 fastsaat |r lowe lor | asrszai 1815] 3000 so | 150] a0} 109 fasteaza fn [urn or | asszzs @ 2 =~ | somo 2] 7 10/50] 139 fastsaas | [wow [or | asrazas as 5| x00) oo] 20f 2] Jastszz6 |n Jewe |or | astsaze 233s | ma = | 8 00/020 fastsza7|n |ewe [or | astsza7 os] om 2 | 40] 89] 109 fasts100 |n Jone jor | astsdoo @ 1 | wim | 2 10] 20) 0) sisson [nm [rww [or | astsaon so 180| como 10 | 2 10 | 109 Jastsuso n Jrcu [re | Astsueo set en HTRQUNOEABLITY UST fastsast (n frou |re | asrssot SEE FET INTERCHANGEABUTY UST jastsasz | fre [re | asrsusz SEE FET INTERCHANGEAMUTY UST ot | fastssso|n fem [or | asrssso was 1m to | cor 10-1510] 30) 100 fastssst [tt [mm [or | asrssst Gast tao | e020 © 10 | 15,10 | 50), 100 asters jn jus | asters SHE DATA SHEET ON ASTEITS fase7 fn us| aston SHE DATA SHEET ON ASTOLI7 fasten (n fw [aswne SEE DATA SHEET ON ASTENTS fastoue | |wcn [re | astouar SEE FET INTERCHANGEAMUTY UST Jasteaso | [nen |re | Astéas0 SEE FET INTERCHANGEABLY UST fntsaan [mfr far | acrsaza as 0 15] 01% = 4 | 4] 20) at fariani [a [wow [or | arraort as s| 202 faraania (n fren [or | arraan14 a 35 | momo 2 20} ao] faraaea |n fron for | arraara @ 3B] om 2 Jarsiz2 |n |e [or | artsiz2 8 25| 100800 = 10 | as 10100 fAsvorse |n four [or | asrenre SEE UNUUNCTION ITERCHANOEABLITY UST fastoniz |n Jrur [ws | astoni7 SEE UNUUNCTION INTERCHANGEAMUTY UST fastorra (n four Jur | asrorne SHE UNUUNCTION INTERCHANOBAMUTY UST fariooar jn frut [us| artecar S85 UNDUNCTIN INTERGHNOEABUTY UST a EEE 388 TEXAS, INSTRUMENTSTRANSISTOR INTERCHANGEABILITY MASTER LIST OF NONREGISTERED TYPES ————— a RATS EECCA GRACES 5 = ‘ Me ree smacune he Yawn | | noe onvearsst — |rynasrc Yoo Vero Viet SauvALneT ste=25°6 MN MAK @ te [MAK @ te] MN | mn inv vw early ima) |e Jarreoas fn Jour Jus | arreone SEE UNUUNCTION INTERCHANGEABLY UST faataoe | lowe |sw | astana as | 302 fas Fastaoua In lowe |sw | astanda oss] oma fs faeravoz_ fn lone Jor | asroree as | wm =o sf 100 fararoa |r fone [or | astavos as | sor so as 20 1o0| fasraoa fn fnew lor | Asvavou @s 0 = sa] om = | 6100 100) jasra7os fn fnew for | Asvovos as 0 =| som =| 8100 100) jsraros |n fren for | Atvaroe as | m0 =| 1 10 100) faeravor |r [oe | aaravar x 30| woo | 1 v0) too] fasravos [a from [oe | Asravoe wo] aso = | 10] as Jasravor In fnew lor | Asraror w wl ews 1] 1] fasra7io |n fnew for | asrario x | v0 = 1 | 1 to] a9} jsraiy fn few for | asrarny a0 m0| aon | 110] 100] fasts [n fone for | arraoxs as © «| wm 10] 3 50 100] fastaoar [nt lone Jor | Asraoar @s 0 © | 40120100 | 3500 109} faaraoze fn fore Jor | asreoze es | 0900 1 | S800 159] fastaoar | lone Jor | asrsoar «0 | 100300 10 | 3 s00 159] fastaose |n lone lee | Asreose es wo} tom | >to] 100) Jastaose fn fone for | Astaose a» wl] seo 11 Ft es Jastaco in fone for | Astaoco a» wl] sus 1] > ls fasrasi |r few [or | astaoer as» 0| sam 7 | 7 jastansa fn fone for | Attaoea @ 3» 30] 190880 10 | 100 faetsiz2 In |new lor | aarsize as 2525 | 100300 0} 109 eros foe] dsc | teas cx set rower DATA BOOK leroy for] [sc | ncaa ‘SR SEE POWER DATA BOOK | jcioww for} Isc | reas SCR. SEE POWER DATA BOOK Jean fox |e Jee | ansast SEE FET ITERCHANGEABMITY UST fco0o fen |e fre SEE FET NTERCHANGEABAITY UST jessr dex |oecn |re SEE FET INTERUNOEABRITY UST Joos fex|ncn |re | ansuso S25 FET INTERUANGEAMUITY UST eos fox lice |re | anauco SEE FET INTERCHANGEABLY UST Jessa fox jinn fre | anaase SEE FET INTERCHANGEAMATY LST ses fea ncn [re SEE FET INTERCHANGEABLY UST sso fen |New |e SEE FET INTERCHANGEABAIY UST snr fen |uen |e SEE FET INTERCHANGEABLY UST corn fen |ncn fre | ansaso [SEE FET RERCHANGEAMUTY UST fonsoo fox fice [re | anaasy SEE FET NTEROHANGEABAITY UST fowor fen |nc |re | anaaso SEE FET NTERCHANGEABRITY UST Jeusoa fen |wcn |re | anaes SEE FET INTERCHANOEASRITY UST femeos fen [ncn fee | anaes SEE FET INTERCHANGEABLY UST ———— TEXAS, INSTRUMENTS.TRANSISTOR INTERCHANGEABILITY MASTER LIST OF NONREGISTERED TYPES ee A CATS SERA GURATRT 5 u " Me ve roaccnt he Veuwy | @ | sana Tonveamsy — anzst¢ Yoso Vero nae Sunaise rtenaste Ta AK ote [ROK we] oa | ne om mM) marty tmay| |e Jowsso fen |rcn fre SEE FET INTERHANGEABUTY ust fonect lex |e [re | anaase SEE FT RTERCHANGEABLITY UST fonecz [ex |e [re | anaase SEE FT NTERGHANGEABLITY UST fonses fox |ren [re | znass7 Se Fe eRcHANOEARATY UST fonees [en [ncn [re | avaase TEE PT TERGHANGEABLITY UST fonees [ex |nen [re | anassr SEE FET NTERGHANEABLITY UST fonece —lengnen [re | 2naase SEE FET NTENGUNOEABUTY LST fomeer fen |nen fre | 2naass See Pe neRCHANOEABLTY UST fowsr7_fen|wen [re SEE FT NTERGHANORABUTY UST fezso fex|wen rE BEE FET RTERCHANGEABUTY UST preoe Joel far | nse 0 32 sx) ise foe|nen [Da | 2nssas rth pes [14 200 “| paves [ce|mr [or [ner moss | wom 2 [78 eo 109 paz Joe|me or | ns01 sos 5 | 15090 © 2 | 78 500 135] pare loe|me jor | nse so 0] | worm 2 175 500 | pares loe|me jor | nse so | tom 2 | 75 500 120) pares loe|mw [or | non wo | wom 2/73 so va5 -—— Yaser—foelone or mo wo | soo | 75 a0 135 pave |oelene lor | nsor mo 7 | wim 2 [78 50 | pzret0 fo lmwe or | ns91 so 70 | veo2m = 2 | 75 500 125] i" pm forlme |or | aww mo | wm 2] as 0 bare |oelme Jor | 2xsosi xo | room = 2 | 2510 ams loe|me Jor | 2Ha0ei mo] | tao 2 fas 10 oame —foe|me [or | 2naose mo | 2m 2 | as 10 foams |or|me Jor | 2naoso rae lee ame [oe lme lor | 2xsost xo} | toon = 2 510 bam for|me lor | 2u0si so | tm 2 [sto ozme | |rew [ou | ozs wo s| i | 0 ao] fomare | fren fou |ozuze ~ %| vom 10] 4 150 22) fomzztea |n fren [ov | ozrazica 3s | tomo = 1s | 3180 = oaazi9- {n |wew [ou | oerzi9 f | tooo 150 | 4s 220 oration fn fren [ou | ozrzzica % | tooo wo] 3] | 20 fomaves | |e fou | oxaves « 0| wom ol 4 190 20) orasesa |n fone [ou | pzravosa © | rom =o | 40 20) pam lochen |sw | rsita so 5 | ‘som 100 | 2100 | azrt —foe|nen fer | 2xuose m2 | om 2 fas to Ef sara Jochen [wr | avarve wo 0 | sono 0 vas sara foelten er | ananos xo 30 | t00200 0 t59 sare [oe lnm mr | ananos wo 0 | 130300 10 7 ba2oa1 foelvow [or | ns90 go 33s | 40200 Ee to9 nee 370 TEXAS INSTRUMENTSTRANSISTOR INTERCHANGEABILITY MASTER LIST OF NONREGISTERED TYPES ASN RATS BECCA SURAT 5 z " Me rm maraconnet fe Van |e | om cnmmasst — |ry-asre Yoao Vero he souvalnet ete~a5re WN MAX @ te [MX @ ie] Mn | san (my tmar]evy tomy] Jey pazoa2 joel Jor | nero moss] sos a 7s 500 tas pszoze Joelen [or | nevo sm © wl! wim 2/95 50 2 fossoasfoe|wn Jor | nse0 so 0 ao | 100200 = | 75 S00 129 Jessoae foe|nen lor | nsso m0 | 15000 §=— 2 95 S00 135 oaspar|oelten [or so 0a | 5050 a [7s 00 10] Josso2e |oe|wm Jor | nsvo wm 7% w| wim 2 | 5s 00 2 Josso20 Jos|wm Jor | nss0 mo 7m | om = 18 teo 129 Joa foe |nen [sw | nsiae ee ed as a fovsse [nv Inco [re {SEE ET ITERCHANGEABLITY UST oussso fw |e [re | ansoar SEE FET NTEXGUNOEABUITY UST oo [nv Inc |re | anseso S28 ET NTEXGUNOEAMTY UST roy |v [ncn fre | asraezt SE PET RTEEOUUNOEABTY UST fm wc [re | anonsa SEE PET RCTERGUNGEABLTY UST Ime Jon [re 205950 ‘SEE FET INTERCHANGEABLY LST lw Jc |e ‘SEE FET INTERCHANGEABLTY UST mcr |e SEE FET NTERCHANGEABRITY UST rio [mw [ncn [re {SEE PET RTERGHANGEABLITY UST enya Ic re | sro SEF FET NTERGUNOEABLITY UST Jeniz, fu fc fre | nsza SEE FET NTERCHANORABLIY UST era fou |e fre | srs {SEE FET NTERGHANGEABLITY LST + a soo inv cn [re | ansas SEE FET INTERHUNOEABAITY UST fensor fr hem Jor | Aaron mw] worm = 150 {15 130] 28] 50 loo |r Iam |sw mo 35] fs 10 209 feos |r fnew [sw m 0 13] wim la 0 0 feoen lr fren [or | arava wo 7s wo | wor iso fia 130 a5] oo fewzz |r |r Jor | ansuun mo 0s] w050 150 15 150/33] oo ees |e new |sw m 2» | wim 0] 2 wo 09] feuzo |e [new for | astzzes m0 | wm 150 | 5150] 0] 80 ft from Jor | asriee m0 wo | oom 50 | s 150 so} oo lr Jaen |sw mo 0 13] som 10 2s to 309 lr Jaen Jar | aravve m 7m | 22m 0/1 v0] 20) 220 a ee) m 4 2s} om 0] 5 0} 30) 300 Ir lowe [ar | vse mo 0s | ae a[a4 of © 3] om | 2 22) Ia fren [ou mo 0s v[a “ao Im Jrew [ou wo 9s] 1]2 % ‘co| Im fron [ou wo 3s | td) cage 10 | Im fone [Dv wo 0 | w/a 1 20] TEXAS, INSTRUMENTS 4316 TRANSISTOR INTERCHANGEABILITY MASTER LIST OF NONREGISTERED TYPES aT Se SASS 8 0 " te iad (REPLACEMENT. we ‘Vet{eat) ej won fonMaamst —|t,=25°¢ Veo Vero aes ose eeassre aoe YA we | ‘om ono toa) touo|__ lo I fur [ou | naa @ 0 ul s wfa ol | a Ms Ren foo | Sots SS 8) Bo Se] 3s] | Ma hes foo | Sera @ 8 S) Sols el | Bay Ma few fou | bean S 8 8) se sts el | a Ie fer Jou oe sp we fae | i [ou eS 2 8S owls owl | i een fou @ 2 SR els el | a Ms ew foo BB] oe PR] | ey ape for oo wee Poon paso] | Meow foo = S$ 4s] 1] te] | a i few foo SB 2 ele t]4 wf | se is few foo SB 2 BS ule wl | Im few [ou wo | wim ola v0] 200 i few [ou S 8 8) BR is] s ie] | a i fen foo @ 3 S| BR isl tis] | a it Rew foo S 2 8) 8R is|s is} | ls few fou me | wie fas of | al i @ 8 8) a Ri By | i ew [ou 2 8 8] Bie lo) | a it rw [ow | oes 2 8 Bl Sie w(t | | amy Is few Jou [oars ime ef wm fae oe Ms [ose fou. | Sean S 8 8) is] 4 is} | ml Ms [ose fou. | eens 2 2 Slime i |4 i) | a fe se fou | Sxaser & § 2 ‘sie “Sf as 8] ool am Te ew fou [mane wm | wim paso wl ol Ms lowe Joo. | ans S 8 Bi eie 1 |B el se bestia (aloe [oo | a SB] teas 1 |S ta] tm estar” (a [re [oo 8 Be an [3s ao] | ras [a low fou wm | mime we ae veo] | aa izes [a lowe lou Ss ese MYT MP | i least (a los. foo 2 8 S| ke 4 ‘e sco | (rw foo js 8 fe 3] ao] | oa oso [a low [ou = el rr oawee [a fre. foo 2 3 3% 3}2 8) | sl oars (a fe |. | mans = 8 Bow | 4 wel | So oar (fr [oo | nase 8 Rl em me] tte] | ae faoaoos [m [wre [ou | ancase m0 wl wm wo | a vol ‘200 owes lesion de | Sas ste nacanoaiaury ot nie foiloor fre | anre $3 fr trecuavoussue ut sir’ forfeon [ee Sie ernescuncty Ut TEXAS, INSTRUMENTSTRANSISTOR INTERCHANGEABILITY MASTER LIST OF NONREGISTERED TYPES ——EE 5 2 " te TYPE (REPLACEMENT ie Veneer) elt a nee re seo vee z co i Me eect Zine cle lS marble k Sesemoahe pear: eke |e seem Saree |. © | Seseocmcan ss SEER [x | Sexes ee eck te | sme jmemsst |i ech |re | ano |SEE FET INTERCHANGEABUITY UST SRE Ss | Sees aaa re x kek Sateen a SER i ee | Seimamtens Sle Ge: | seins = er i ree. ke |e ert iss IS |e Speer ee Ele fi inecons ee —— ree. ls |e momma ese EFS fe epson se EES fe ines ee —— reer eke |e se meet on SE | am =| Sean ee BIS |e Epson Se ee ee }MF3304 [mM [PNP [SW 200 16 12] 30120 10 | 23 10 600] ee cee (| ere fe RE [ow | Siesatemenin [mre2004 |m [ncn [re | 2naseo. ‘SEE FET INTERCHANGEABLY UST mx kick ke | ssemams Se ke i | Sexes Se EG ee | sees SS ex tek ia | susmems mer kei ke | | Seeemre eee fs |e freon ete —— me Ck les | ssa er AS UE le =| Beceem SAFER Se | sees Texas, INSTRUMENTS anTRANSISTOR INTERCHANGEABILITY MASTER LIST OF NONREGISTERED TYPES SS TAR RATES ECRRAL GRATER 3 0 Me re memaconnet fe Ven | o | © ve Torveatst — |t,-2s°c Vero Vero rue souvalae? ste=a8re mane WAX ee [MAK @ tc] | om) my om smarfevy —tmas| {se In vc |re | 2naseo $e8 Fer NRCHANOEABUITY UST Im wen [re | nae SHE FT RTRHANGEABRITY UST Im Iwo [re | ares SEE FET NTEREHANOEABLIY UST lc fron [re | ans SE FT INTERCHANGEABUITY UST Im wc [re SEE FET INTERCHANOEABLITY UST lh fost |e SEE FEY INTERCHANOEABLITY UST lm fen [re | x00 SEE FET INTERCHANOEABLTY UST Im Jc |e | anon SEE FT INTERCHANGEABLY UST Im wc [re | anzoa “SEE FET RTERGHANGEABIITY UST Im Jncn |e | axao7 SEE FeT INTERCHANGEABLY UST fm Jen |e SEE FET ITERCHANGEABLTY UST lm row [re SEE FET INTERCHANGEABLY UST Im fron [re SEE FET ROERGUNGEABUITY UST Im row [re SHE FET RTERHANOEABTY UST fm Jon |r BSE FET IETERCHANOEABLY UST Im cn |r SEE FET INTERCHANGEABLY UST fwresoraw from [re {$EE FET RERUANGEABLITY UST fwsizo, | wen for | ansose to 275 250) 2520 © «0 | 50 15 usa | new Jor | ansose to 30s | 2520 © 0 | 530 43] fmssico fa fone for tow "so ao | 2100 A | 7A »| fmeior_|w |rrw [or vow 0 | asi mwa] 7 2A | furo | from [sw wo 13 a| tim = wo fas 8 sm wrens | fron [ar wo 80s] ow || sf moier2 |w [ren [or | 2nsose tw 173 v75| a0900 woo | 6 100/99 fmnivet [wm [row [oe mo] 0 ao] fmwzase fu |wen lor | 2nsoso w 3000] as ola 2 130 fmuzase |m |wew [or | 2nsos9 wos 7s] 30 ols 2 ‘so funzzso | wen Jor | 2Nsose ws 7s] a mia 139] fanzasa | wen [or | anaes mo wo «| om ofa 1] ol a fawzasa fu from Jor | 2nzasa mo | cosmo fast | ts) Fmwzers [a [ene [sw | 2nzena mo 132] aos wo] 28 40) fmwacoo fm [ren for | 2ns0se w veo | 20. 0 139] fansoor | len [or | ansosr w v0 | 20. 10 10 fansoo2 | |wen [oe | 2nsose w x00 | 20. 10 10) fana00. | fnew for | ansose w 20 | 20. 10 30 fawzcos fa fren [or | anata w t0 | 30 » | Fnwacor | [wr [or | ansose w veo | 30 0 | fumsz2a | |wen |sw | 2na724 M4 | asi 500 00 za fmms72s |m |wew |sw | 2Na725 7 | asi 50 | 600 20) fusz26 | [ene [sw w | mim 0 Ey 20) ————— oe om Texas INSTRUMENTSTRANSISTOR INTERCHANGEABILITY MASTER LIST OF NONREGISTERED TYPES LL aR TT eR RTS 3 " n re seu we vam | S| 6 ee Sree yaa Yao vero a ovata irenate Tan waa Yo | we mon tnsyfon ts] [oa faomes [a ren [ow we 2 0 we wf 2 | | a foros oes xe Bi mm | 3 | | Sal fares | [rw |w se S| "om lel "S| ramos few so S| wow to fst aa] 2s azano a Jor [or | ae ‘wi we) mw] a wo rican | te for | aces w i t| me mls races | foe. | ee oe as | aR aces | fe [or mw ie] mois are fu = « »p = es acre ae se] am] 1 aw] | Fa ces fc [nee | anne peg re geen geilies ores a re cur [re {or mo | ‘ae Es raaasa a Jor [ow = =| =m =a rinaass fu foe Se em ml som] wl aaace (|e [oe * ® mls Blu SB! | racer |u| lor Sm] Ss Slo S| sens fw Jor | Boe ‘se e| wo | s | | ai fare ft Ire | ‘om 8] So om] 3 ie] | seer fa [re |o tee) aoe} 3 ie] | race lo {or B's] RS ma vaca fw Yor rr ra rngeea Iu fe for ss S| & oy tans fe far | aan = © ele 4 rH rosario fer | esr mou owl t re naan Jo fe or Parr = 00] Pe fmsezs fc face lot | secs sete rouse ust fiona fact (re | away Se rr nrmowceam ist rior fee _| oss ietre newouncasay st | hice Yu fc [ve] asa terre nmmcuncenair ust frios fc fen [re | ua Ser nscuncesay st rice fe re | rsa istre neeousousy st rior fu few re | Danse Sater nectar it rion fu for Joep aaene 2a er rexaunceaatr us rorior ft fen foe | aes Seer nrscusceay ist fra fon fre | ais tier nemouoos st fritz | foc e_| eis Ste nomcuancea it ho fx fcr lee Set er nrtouncessu us cst foe fae Set er mrsauoss ot rs Wee |e Set ernesouncessu st rier fc foot | asa Set er nencuea st Texas, INSTRUMENTS 319TRANSISTOR INTERCHANGEABILITY MASTER LIST OF NONREGISTERED TYPES HARIRI RATINGS TRECTUCAL GHARACTERISTS, i 2 " te re EACENENT oe Youve | @ | NUMER ‘or miamest — |t,=25°C Veo Vero vite EQUIVALENT 3 te=25°C mn MAX @ Ie [MAX @ ic] MIN | MIN ow mM toni |v) tad it }urassos | |e [sw oo 812 | 40200 © 300 39,200 400) jweaar2s |m |e |sw | azra7es 600 40} 3520 100 | 45500 250) jwesion | Jone |sw | Astana 0s mw | oun as jwessoua |m lone |sw | aeTaoca 30 as | 30400 sa [wes70s [mw [xen [sw 30 ss |e wls 10 200] jwes7osa |m [NPN [sw no 80515 | 2040 wl s 10 200] lweseaa[m |urw [sw | 2na003 ao 40 25. wo] 25 10 350] Jwesera—[m [Ne fer | rise val 50) 13) |E 2 a|4 10 20] fmeszae9 | [en [sw 3040 wi 10 |.25 10 00] jweszzii|o |New lor | asra70: 310 3080 2 2» jwesz7i2_ | wen [ce | asta7I0 310 75205 2 0 lwesazis | [wen [sw | 2na003 310 2090 2 30 Inesz7r4 |w [xen [sw | ana904 moe | 75225 2 0 Jwesz923. |m |New [or | asta7io mo 5 99| Jwesz24 [a |New |cr | asts7i0 Pr 150| jwesze2s|m |New [or | Asra7t1 m 358 23 fuesz026 [a [ren [or | asra700 someting ae 35 jwessaez | |nen [cr | azras92 aio 255 | 150.900 2 159] Jwessa9a [a [wow [cr | ns9s 02525 | 90180 2 90 Jwessaee [a |New [or | ns96 no 0255 | 35110 2 s [wossaes [m [wen [or | ns9« mo 2525 150800 2 150] ]wesases | [new Jar | nse3 303012 | 20200, 8 600] wosaeas |i lowe [or | asrzese p08 5 | wo sos s0| 25| 100) ]weszeata | fone [or | astaesea 302825 | 100. 30 [25 50| 100] 130] [wesseae | fone |sw | 2naaza 20°C 6] so «0 [a6 10 00] jwrsseao | lene [sw | 2naaza 300122 | 90100 | 20 00) wrsaeas |m [wen {sw | 2No903 20 = 45] 30100 | 230 330) jwesseea | |Nen [RF | 2Naoo4 mo sas | wots 10 200} [mesaee |w [wow [ar | znaoos aio sas | 100400 10 200] jwesazoz_|m Jor [or | asts702 30s | 0300 = 50 2s 50 1109} iwesa70s | Jone |cr | asts709 30 90] 010 50 aso 109} lwesazos |m |wen [or | asts704 no = 0-30 | 10900 = 50 | 6 100 109} Iwesa70s|w [new [or | asra70s 30 «020 | sotso | 8 tO 109] }wesa70s | |now |or | asTa708 30 40-20 | 2040050 | 100 109] ]uesazo7 | [wen |or | asta707 303030 | 100400 a { 1 10] 109} ]uesazoa_ | wen [cr | asTa708 310300 | 8660 rfa rf a) juesazoe |w [wen [or | astaz00 m0 | asta rf 1 wl a juesa7io a |wew [or | asta7i0 30 = 0 | 90320 1] 1 wl 90) Jnesa7it | |New [oe | asta7i1 3io 30-30] 180660. rv] 1 10] 129] jwesa7a1 |m |New [or | ns96 i «| see 340 TEXAS, INSTRUMENTSTRANSISTOR INTERCHANGEABILITY MASTER LIST OF NONREGISTERED TYPES eee aE | — aera i . ” te 1 ‘REPLACEMENT Ld Veseet) | @ | & nue ounmarst = |t,-25° Yoro Yao tio oo ; uae ararea ares Pe Po Pa malon ew] |e wasirz fu few for [amare Sele ataa sel ceseteeeel| S0are [aes ests bal fl |e Ss pee et alee val ico fa few fu | Pat, peeeet | cies ss fa fen |% |, cole tag Gal deen rssia fu few Jor amare eae ana = [fier eaetaT pecan peed ora are sepesbie || eee sess a Row foe. amaze mo eles. Alle pass ft ct foe | az, 6 ole ails issu fw Jor far a eae poss, fa fos or [aes sekarohaee [eee acl Hocerst al fees fora ama oe (oeee || essere peas fi ioe [oe |e oo ales alls | ese alfa] ord aco iets] facaoeemtll races fs Pct [oe [azn Sale| ieee oa ills ses fa ime oe | Arua ge |ieeesesesl|s sss al ese oral cna 5B dies ils feist fu few Jor amare TeRae sata] eooria | GEt= res, fen for. [azar ee clecee ele ress [fet [oe | are peerless apete ress: ft fe foe | are eeetehaics | eese ttee| sais +——} essa Ju fr Jor Tame eels eea Estee a a= ees a eel ors ee isl ol Peed a A ord meets 3 cise, fa fom | | Ba elas set el E ieasra bs few [w [amen coke < ats |e aera poses fa ox fe [see aeeiehada|icieeee | aes reg ffm |e |, foes tatcllees | le sis fa fom |B | Rae Soo Ble aie Ale oon aif eel] arma alesse | creer pyar |e ree fe hex [essa Bete epee a |e ele tee rset fe Rew [op | sais sett al gosntaca|fsipce|ee irc csc fa era cet Be So | tose ele elles fess fu fro Jor Tasane Pa = = | aaosal | oEEon ale eases fa lee, |e [ane mS alse als el Tg reed [fe |p| tne sot ofl fiececgee a) esos) fell es fe [or | ts oe a[s" 8s 8) || asee hu few [rs el somaya |iksoom mrs ets |p |i pees ele) |e ce Sept aaron sl cles ea is recs, a how | [ty Settles tts fla Feo a soe tsetse csmeyeeer sl estes ae TEXAS INSTRUMENTS 381TRANSISTOR INTERCHANGEABILITY MASTER LIST OF NONREGISTERED TYPES — r TAR RATIOS Tic GuRACTORATCS ———] n ” Me 1 REPLACIAENT, - Venieat) ein pert ORNIARET — |Ta=28"¢ Vexo VoIo aie Scuvaine ste=asee Tan WAX ete [AX @ te] Mn | me om inailivy _tman| || Tu row [or | nave sm 0 w| o wlas 2] Im [row Jor | nses m | 10 [35 to | Im from for | astaror MM ch liso alo x Iu frm for | nave 0 wo| “owes x In [row Joa | anssas x0 70 w|i 0 Im frm Joa | anssas so} ea 1 Jr 100 135 Im Jew [ox | anssas So 30 16 to [ts 100 u35 Iw fren for | nasa x00 w| “ow 's [aso tas In Jr [or | astvor 00 wo] = 70 | 25 100 | In lone Jor | astavar 500 w] to | 25 100 | In lon fa so 000 | ome 0 109 Iu one [oa mo 00 | 7H 0 109 Iu [ew Jor | asraron 200 w| ono s|a5 5 Im from far | nse mo 0 «| mom m5 Im frm Jar | nso xo | orm ts |as 10 ° Im from far | rsa mo mo | ists | a5 10 | Iw ew far | nsvas wo 90 | 2 “eal Im [ome [er | mst35 so 30 | 3 Py Im frome [Re mo 5 | ats 4 | Dm fom} nos | t]3 4 Fe Im fren Jar | nse ao ao | as < 0 Im lene far | mss mm 4 | 20 ‘ 22) ln Jew [ar | nsio8 mo | am =| oo x0 Jursvit |i fnew fre | soe no | mam | a0 3e0| fmrsiiaa im fren [or | nse wo 0 wl mao «(3 0 2x0] wes | row [er | netae poole asta gst) 7] 3» 22) mesa [on |r [er | ansroe no ras 5/3 2x0) fwensa |w frve jor | nsioe mo wo | ois | as 10 ‘| Inesnas | len far | noioe mo so | oi sas v0 ‘ol jurssisa |i lino [ae a % »| » a3 | fwrsior | |rom [or | anssso Sto wo 1] S020 = | 210] mo] a lwrsior |u |rme [sw | znaa2o no ‘2 «| worm to fas 10 sx fosioe|w lowe sw | anaczo no «| wuo las v0 720] osist [a fone or | ansaoo So 0100 | oases | 30] 20] fmucert | few Jus | anaoot Sef UNUUNCTON INTERCHANGEABIITY UST Imuaar2—[w fom Jus | anaooe SE UNUUNCTON TERCHANGEABLTY UST rmsaara [wm [ew [ur | anaava SEE UNUUNCTON INTERCHANGEABUTY UST Imuaera | [ow fur | anaona SEE UNUUNGTION INTERCHANGEABLY UST reaco |wajven [re | anoeao SEE rt RTERCHANOEABUTY UST reso [waiver [re | anoeza SEE PT INTERCHANGEABUTY UST Se ——— 342 TEXAS, INSTRUMENTSTRANSISTOR INTERCHANGEABILITY MASTER LIST OF NONREGISTERED TYPES RAIMI BATOS TRACTREAL GURACTRNETS n be vm umacinar oa Yawn |e | nomen oumuast franz" Yao Vaio 1 scovalner pte=28%e WN MAX @ te [MAX @ | Mm | MN om imarlivy _cmas| {owe +—|— {mow esoe —|ualincn re | ante SEE PET RTERCHANGEABLTY UST esto |NalNncH [re | anager SEE PET INTERCHANGEABLY UST ests |wAlNcH [re | anager SEE FET INTERCHANOEABLITY UST weszo [nal [re | anaezz SEE FET INTERCHANOEABLTY UST esa |nalnncn [re | anaezt {SHE FET INTERCHANGEABLY UST saa falc |re | anaszz SEE FET INTERCHANGEABUTY UST esas |nalnicn |re | anaezt SEE PET RTERCHANGEABUTY UST Inrs30|nalnon fre | 2Nsas9 SEE PET INTERCHANGEABLY UST fessy—|ualivcw [re | ana4e0 {SEE FET INTERCHANOEABUTY UST wessz|ualnvcn re | 2nsuse SEE FET ITERCHANOEABLTY UST saa [Nal Joe | anauco SHE FET INTERCHANGEABUTY UST sao |ua|NcH [re SEE FET INTERCHANGEABLY UST rsa |ualivcn [re {EE FET INTERCHANGEABLY UST wrsaz—|ualicn |r ‘SEE FET INTERCHANGEABLY UST esas |NA|IcH |r SEE PET INTERCHANGEABUTY UST nesta |ua|incn [re SEE FET NTEROUNOEABUTY UST tases |ualnece [re SEE FET ROTERCHANGEABLITY UST rreses |ualnice |re SHE FET INTERCHANGEABLY UST reas Nalco |re SEE PET INTERCHANGEABUITY UST nrcss —|nalnce |r SEE FET INTERCHANGEABLY UST fercsss [nalncn [re {SHE FET RTERGHANGEABLITY UST esas? |walnc |re | ansuse SEE FET INTERCHANGEABLITY UST wesase |walnce |re | anause SHE FET ITERCHANGEABLITY UST ursase—|ualnen [re | anus SEE FET INTERCHANGEABLY UST pwses falven [re | auae cer preciosa sr fwrsaae Jalen |re | anaare SEE PET INTERCHANGEABIT UST Iwrssss |walnen re SEE FET NTERCHANOEABLITY UST essa |nalncn [re | anaaet sa nr emmennousary ut nesese—nalncn |re | anaava ‘SEE FET INTERCHANGEABLY UST weseao —|nalncn |re | 2naaoa {SEE FET INTERCHANGEABLY UST esesa|ualncn fre | anaass SEE FET INTERCHANGEABUITY UST ses |nalncn |re | anass7 {SEE FET INTERCHANGEABLY UST fazrazza [n [ww [or | azra222 13 4 | tomo 10 | «150 230 Jazra0s |x |mw jor | azravos 1s 4 4@| tom 10 | 4150 20 Jarrszes In |r |sw | czrsnu 13 4@ | 010500 | sso 173 jazrszas_ |n |wen [sw | azravas ee ee ee) 259 fseioor ~ [F |wn ar | anasou oss | wow 10 209 seiooa |e fawn ne | anases 20 4348] 100400 10 209 jseicr0 fr |e [or | ns95 wm 1s] 2 209 serisa |e for [or | ansusn 00s | 0% iso fis 150] 25] 0 a Texas JNSTRUMENTS 383TRANSISTOR INTERCHANGEABILITY MASTER LIST OF NONREGISTERED TYPES ee Ta TOS TETRA ARACTIRTIS 3 " n he re ren AceMnt hn Yeu |e | vane forneusst — |tan2s' Yao Yoo 1 Souvainer ere~asre TaN WX @ te [MAK @ te] MN | mun (my) ima }ovr tna] se2001 |r |wew Jor | 2ususo wm ss w/w wl 7 1 20 sezoce ft [new for | ansuas mm 3 | wow = | 710 20) escort [new far m 2» 2/ 2 2] % 10 9 sesooz |r [New [ae mo 012 | 20 e|% 10 0 fsesoos [efron [or mo 0 5; amos ‘09 ecco ft |new for wo 35 | rot000 fst “| fsewooe tren lor mo 03 35| moot ast «| fseso10 fr |rew for mo 38] oto ast «| fseaazo |e wen [or mm 0 | tos wl 2 v0 1ea| seioz) |r fun [or m 4 45] doors, «10 | 210 150) seiozz |r [wen Jor x © — | 120200 «0 | 210 209 ses001 fe [new far | nsi08 m 0 0] 0 4 | sesoca |r [ren [ur | nsi0e 2 | 0 « “a0 sesocs ft fnew [ar | nsea m © wo] » ‘ 220] sesoos ft from [ar | nsea mo | O ts] 2 10 pr) sesozs fe |r [ar | ns0e 30 0 30] 20. wis 2» x0) sewoor |e fww [or | ns0e mo 0 0] soz | 1100 a) sewoo2 |r [wen foe | nser mo 30 | 150400 © | 1100 r secox |r [wow [or | msi mo Go| 10030 «150 | 18130 220 secozca |t fren [or | nsitt mo @ =| 100300 150 | 18180 230 secant |r [ww Jor mow wo | 100900150 | 18150 220 sesoata |r [new lor mo = wo] 100900150 | 18150 220 secoz2” |t [wen [or | nsine zo = @| 100900 150 [18180 220 sesoz3 fF |e Jor mo | tom = 150 | 18130 Es) eros |r |e [or | anssso wo 100 to] sows | 2 as| ao] a se7ors |r |new [or | 2nssso to wo wo] sos = wo] 2s] a] a se7o17 |r |e lor | 2ussst wo 10 © wo| mos =| 2s] wo] ol seaot2 |e [new for ed wo | 75 0 ES) sesoso |r [wow Jor | asrazza mo 0 | oso 0 [a2 130 130) seasuo |r [rw lor | asravo7 mo | 4050 «10 | 2510 1 suzoze |v wen [re SEE FET NTEACHANOEABLITY UST suzo2y |v [wen [re SEE FET INTERGHANGEABLITY UST su20or | [ren fre SEE FET INTERCHANGEASRITY UST su2002 fm |New |re | anssas SEE FET INTERCHANGEABLY UST suzoaa fn [new fre | anssas SEE FET INTERCHANGEABLY UST uzoea | [rem fre | anssa7 SEE FET INTERCHANOEABLIY UST fsuzoas |v uc [re | anssar SEE FET INTERCHANGEABLY UST su209e fn wen |e | anssas SEE FET RTERCHANOEABLITY UST | |suzorea ne |wen [re | anssas SEE FET INTERCHANOEABLITY UST | |suzoren ne [ncn fre S28 FET NTERCHANOEABLITY UST ————— | 84 TEXAS, INSTRUMENTSTRANSISTOR INTERCHANGEABILITY MASTER LIST OF NONREGISTERED TYPES —————_———— TAN ATRGE SEEREAL CURATORS 3 . a me re neuen he Yew |e | NUMER OnnearesT — |t,=25° Vero Varo pee fouvaier etenas°e Tat MAK @ te [AK @ te] mn | me mm tmasevy may] [te suaoee |v en [re | ansser SEE FET NTERGHANGEABUTY ust suaosea. jim |wen [re | ansser SEE FET NTERGHANEABLTY UST saz fn few ar | nstar as aa | ae 1 «| eae fowe er | rie woo | 1 =| fsaar: | fr [or | asraone as 5 | osm a seavoz |i fone for | ansaar wo 5 | wom = so fas wo 109 ares fn few for | ansace wo | wim fas m0 io savor fn fiw for | ansaap xo 500 | room =o | e100 top sxs7os | wow [or | ansaso mo 500 | soi wo | 8 100 109 sxa7o | |ow [or | ansast mo | mem =| 1 too 109 saa | |ew [or | asrarar mo 9000 | roam = | + Yo 100) se7on | |rew for | asraron mo 30] ase | to] as jsazer [nm |rew Jor | astaror Sua eee sos] | ass eae eae samo | |rmw Jor | asrario uo 3 | vam = 1] tte] sam |n fren for | astarn xo 300 | soso = ot | ito] 0 seaais—f fren [re | ansnanr so SEE Fer TERCHANCEABAY UST fxaez0 | fron [re | astsusoren SEE FE INTERGHANGEABUTY ST seas |r |mww lor | astose 0 2090/1004 =a | 7 10/100 suase | je lor | asose wo | aso 11 Zo es ease |i |mme for | astaoco wo | us tt el] faust fr [owe for | aster wo | wm 17 vl oo sucez |i |rwe [or | astiosz so 3m | teow = 1 | > tol 00 suase |i hho er | ansroo 30 te | 5 2 eo] fmuor | rem far | rsa x | ‘ ‘c0| face fr fron Jar | vse mo | 7 a] orf fn far | nse oa |e 00 fnaiz_— ft frm for | anaroe uo 530 | 100200 so | 100 too naif from Jor | anaros ee) eee ES aia fa from [or | anaros uo 00 | wm | 1 100 7o9 ais fa from [or | anaror xo 00] comm = | 1 to! 00] fais ft row Jor | 2naroe xo | sw 1] tol es frat? fnew for | 2nario wo > | wat] tio] fare | www [or xo >| ow 1/1 10] 10 fruso fn wm Jor ™ » © | fuss fn |rew for ™ © 7» ,| us| |rew for 2% | so |r 190 «| fuss | row Jor 0 | 2000 13180 Pa usa | |row Jor wm 4 © | ein 1s 189 | usa In |now Jor rm 15 rasa fn |i for ms @ | isso See TEXAS INSTRUMENTSTRANSISTOR INTERCHANGEABILITY MASTER LIST OF NONREGISTERED TYPES Ss TARR RATINGS ESTOEAL SURAT. 5 1 * Ne TYPE REPLACEMENT ad Vee{eat) elf mine Tonneamst — |t,=25%¢ oso Vce0 ioe Rauwat ete~28% TN WAX @ te [MAX @ te] Mn | MN (mw wy marlin tmay| | otn jrusa—|n |e Jor | anssa 23 | ors 10 frars—|n |e [or | anazisa 125 420 | 120280 © 10 ruse | |nrw for | 2nsao wo 70 10. a]is 3 fnsoa_— fn few [or | 2naro2 mm 2 25| som = [250 100] rrsoe (nt lowe [or | anazos. mo 00 | soi 2580 140] frsta jn [nc re | nsia SEE FET INTERCHANGEABRIT UST festa fnew |e | mse mo 3513 | 20 0 re) frsas fn |e [re | nsas SEE FET INTERCHANGEABUTY UST frsze |r [new [re | moze SEE FET RTERCHANGEADUITY UST fnsz7 |r |e |e, | nsa7 SEE FET INTERCHANGEABLY UST frsze jr [rene nr” | nse 0 a) 0/3 ‘ sao frsar | [new far | rea m © | 0 4 sc fnsso fn [row [er | sto m0 | 2 4 ‘a fnsat_ |r juew |r | ns108 mo | 30 4 Pe) rss jn [new [re | ansaue ‘SEE FET INTERCHANGEABLIT ist nsaz_— [a [ome far | nar eases selena igs 1 «| frsse—[n fowr [ar | nsae as onl os 7 | fsa |n|wen fre | ns75 ‘SEE FET INTERCHANGEABLIT UST sas fm [owe fu | saa [SEE UMUUNCTION INTERCHANGEAMUITY UST sa jt [row [sw 0 3520 | 20 wl s 2] fnses—_|n [new [sw mo 0 | sm wl 4 10 2 fnsae | Jun |sw mo 8613] sor = [2520 a0 freer [n [wen [sw mo 80 ts| 2040 510 0) rsae_— [a [tow swe 2 = «© 15| worm to fs to sea fnsao [nuns [sw mo 0 3 om [2s 30 a isso |n [ewe |sw | 2naaza mo 22] wots 0 | 20 a frsst fm [wen |sw mo 3% 2] sm = | 210 “a fnssz_—|m juew [sw 2 © »| wim wil 2% 250] rissa (a [ne [sw per eers xa] jnssa | fone |sw 2 2 12] wm = | 210 sao] jnsss | |nrm [sw mo 0 15| 2010 © | 2 300 fnsse fm [wen |e | ansosrsa SEE FET INTERCHANGEABUTY UST fnsse fu [ecw [oe | ansnasrsn SEE FET INTERCHANGEAMUITY UST jnseo |r |e or | ns00 25 40 28] 100% = 50. | 6 00 fnset |r frm or | rset as © | om «= as fnsez |r from |r | mssza a » 2] % 4 saa] Frees | [rem nr | nsoan ~» 2)» a a] frees | fore nr | rian 2] a ‘ ao fnser (nec [re Ste FT NERCHANOEABLITY UST nse |n Jc re | soo SEE FET INTERCHANGEABLY UST SS 386 TEXAS, INSTRUMENTSTRANSISTOR INTERCHANGEABILITY MASTER LIST OF NONREGISTERED TYPES ————— TAN RATIOS TSECTUCAL GURACTERETCS iz 0 m Me ve mmaconet te Vern | S| numa, formant — lta-2s°c Yexo Vero ig fuvalne : brenare Ta ee | ee] a | ow ww imarlivy cma] | ote Ins In Jno fee | nsor SEE FET NTERCHANGEABLTY UST Ins In wow fre | nsv0 SEE FET INTERCHANGEABLY UST Jns7a_ [nt Iwen foe | nse SEE FET INTERCHANGEABUTY UST fnsze | |ncn |re | sre SEE PET NTERCHANOEABLTY UST jnszs | [wow [re | nevs ‘SEE FET NTEROHANGEABUTY UST nse |n won fre | aston SEE FET INTERCHANGEABLY UST Insre |i |von re | Astouso SEE FET INTERCHANGEABLY UST jnsaa_ fn [nw fee 20 4025 | 0 s 9 fossa [numa far | nsea 0S | m0 4 350 fnsas [nme fae | nstoe 2 4 »| 2 4 300 Insas In |rm |ae | rises os | wm =a ss a] jnsez [nme far | riser oss s| or | | sas se] Insan fn [cn [re | ansaas SEE FET INTERCHANGEAMAITY UST jnsae—|n |nem fer | nse “35 as om =a] ss 09] fnsro—|n |e Jor | ns00 os 0 © | 109 «= as 80 inset fn |r Joe | nso as wo} tam = fas fnsea [nun [or | neva ws 0 | 100% so fas sea, dn one foe | nso 2s © | om =o as nsse In rem lor | neve 2s © wl 20m 280) 200] mses [n |e for | nses as 00 a0 | 100200 =| 5 100] 100) 200 Inses | [uw [or | nsve ws 65/5530 100 | 5 100) | aco jnser In fren lor | ns0r @s 0 | 25070 0 230] 200 jnsea [nfm lor | nse0 ss =~ co] 10090 © | +100) 00} 00 insee—|n [nen [cr | nsop ws as] 's30 © 100 | 3100) eo} 200 fnsioo |r [ren [or | nsi00 aso ooo fsa wo Inston Jue Jor | nstor as 10 10 | oo a) 1 3 | Inston nen for | ansose #0 10 180] 0 ult 2 Insta fn |e for | 2ns0s9 to 150150] 30. ae 2 Instoe | [mer [er | nsiow ws | om 1 | sm 3 Insts [a |e far | nsios os 45s | mots | S20 0] frstos [a |e Jor | neve mo as | ss200 100 | $100) 100] 209 jrstoz fn |wen for | nsor mo ~~ | 3520 © 100 | 5 100 40] 20) Frston |r wen er a0 el 2 00 stor [a [wen for 2s @ = 30| 10000150 | 4180 259 nsito|n fen Jor 2s © = | somo | 4150 209 nstt [a |apne Jor 2s @ | 100200 0 | 4150 230 =| fnsiiz|n lw [or as | 10m so | a 150 200 Insta |n |wen | sw m © w| ‘wi 10] 3 10 209 Insta |r |rrns | sw mo = «=| Sots to | Ato 0] frets |n fren | sw 7% 0 | wots 100 | 100 0] TEXAS INSTRUMENTS 7TRANSISTOR INTERCHANGEABILITY MASTER LIST OF NONREGISTERED TYPES ——_ a ETAT ACTS 5 A ” ~ TYPE ‘REPLACEMENT. we Vee{eat) e Ls NUMBER ‘onneanest — |t,_~25°C Veso Vor ae rouvalnt srenaste Tin Wa ee [MAK ot] mn | ss om ym imasfivy ima] |e fnsirs—|n foowe [sw | nsias mo 0 0 | soso tm | 4 100 204 sis {noon far | nstzs a © %| » 7 aa size fr foe for rstae & & x = ols» ‘ee size {nl [ow far | nstae so | 2 a In owe [me | naxae uo 0 | ats = Po fn freee fsw | nsisa me 530 | coi | 3 tao 220 fn foe. [sw | reise yoo | sot | to | atmo 29 In frome [sw | metas yo | coi to | 3100 E In fem [ow | meize yo | sow 10 | 4 100 7s In fre [ar | nsrar a & nl ol Ih [owe Jar | nize onl a ‘ = fa frow fre SEE FET RTEOHANOEABLIY UST fon de rem |e SEE FET NTERGUNGEAGNITY UST foe fst pen re Se ret TEROUANGEABRIY UST far fst ren re See fet wrencuanoeAaAy UST tia fat fron [re HEFT INTERCHANGEABLY UST ls prow [re See eT TEROUNGEAMNITE UST ls fro [re SEE eT NTERCHANGEABLTY UST fs fron fre | anzeon SEE fet NTEXGHANGEABITY UST fm [rcs [re | anaes EFT nencnaNeAMRTY UST foes Jar cw [re | anaase “ee rT wrexGunoeamnTY ust fee fst cn re | 2raate Se PT INTERQHANOEABIUTY UST fir fat en re | axa SEE PET NTERONANOEABUTY UST tise fat won fre | ansase SEE FET INTERGIANGEAMTY UST fave fa [naw |e | ansase Se eT TEOUNGEADATY UST fico fst cn |re | anssar Sf eT INTERCHANGEABLY UST for fst cn [re | anasor SE eT INTEROUANGRABUTY UST ce nen |e | 2rateo SEE FET NTEXGLANGEAMTY UST fez Isc re SEE PT TERGUANGEABNITY UST aaa fuer Se eT NTEROUNGEARLTY UST ast nen re | anssas SE PT NTERGUANEABLTY UST fase fnew re | anssas SEE PT NTEROUNOEABLITY Ut ass Ince [re | ansser GEE eT ReTeROUNGEABATY UST ae new |re | anssar SE eT RTERCUUNGEABLTY UST as nen re | ansoas Se eT NTEROUANGEABLITY UST te ot |re SE PT NTEROUNGEAMLTY UST wa fa fnew fre 2 Fe RTEGUNGEAMTY UST te fot ven [ee SEE fet RTERGUNOEABLIY UST oa fst ew foe Sez rer wrescunoeaauy UST tzu fw fue [re SHE Fe ntERCHANGEABRTY UST —_—_——— 348 TEXAS, INSTRUMENTSTRANSISTOR INTERCHANGEABILITY MASTER LIST OF NONREGISTERED TYPES os Ld ray " ae vez hacate Yoo Yao oun |e rte=25°¢ WN MAX @ tc [MAX @ ic] MN | mn fmw) ov) ma |v) tay co) SEE FET INTERCHANGEAMLITY UST [SEE PET INTERCHANGEABLY UST ‘SEE FET INTERCHANGEABLITY UST [SEE FET INTERCHANGEABLTY UST i H ‘POUNRITY . il ‘SEE FET INTERCHANGEABLY UST ‘SE FET INTERCHANGEABLY UST ‘SEE FET INTERCHANGEABLY UST Sa ReRCLNORALTY gs bb5/ BE 5868) 6888 § nt aaa ‘SEE PET INTERCHANGEABLITY UST ‘SEE PET INTERCHANGEABUITY UST ‘SEE FET INTERCHANGEABLITY UST ‘SEE FET INTERCHANGEABLY UST He i ‘SEE FET INTERCHANGEABUITY UST ‘SEE FET INTERCHANGEABLTY UST ‘SEE FET INTERCHANGEABLY UST SEE FET INTERCHANGEABLY UST ‘SEE FET INTERCHANGEABLITY UST SEE FET INTERCHANGEABUITY UST SSE FET INTERCHANGEABLY UST SEE FET NTERCHANGEABUITY UST ‘SEE FET INTERCHANGEABUITY UST ‘SEE FET INTERCHANGEABLITY UST ‘SEE FET INTERCHANGEABLITY UST SEE FET NTERCHANGEAMMIY UST SEE FET INTERCHANGEAMITY UST SRE FET INTERCHANGEABLTY UST ‘SEE FET INTERCHANGEABLITY UST SEE FET RTROUNGEAMUTY UST ‘SEE FET INTERCHANGEABLITY UST SEE FET INTERCANGEABUITY UST SEE FET INTERCHANGEABUTY UST SEE FET INTERCHANGEABLY UST 828/ S998] 2898] FESS] S998] FREE EFF | Feee | esee | sees | cece | Sees] Cees EEE i ‘SEE FET INTERCHANGEABLITY UST [SRE PET INTERCHANGEABUITY UST ‘SEE FET INTERCHANGEABLITY UST ‘SEE PET INTERCHANGEABLITY UST ue I ‘SEE FET INTERCHANGEABLY UST ‘SEE FET INTERCHANGEABLY UST [SEE FET INTERCHANGEABLITY UST ‘SEE FET INTERCHANGEABLTY UST t 5865/8855 / 2383/9985 | 5558 | 5558 | 5555 | 6558 aaaa[aaaa| aaaa|aaaa| aaaalaaaa aaa i —— Texas, INSTRUMENTS 3400340 TRANSISTOR INTERCHANGEABILITY MASTER LIST OF NONREGISTERED TYPES "Han TINO TECTUCAL GURACTRNETCS 5 x * %e ne REPLACEMENT he Veiw |e | pi fname — |t,~as°c | Yoxo Vero vi rauvalsnt ete=25% TAN WX @ te [MAK @ | MIN | Mn iow) marley mas] | ot Jurzas |v fue re | anausr SEE FET INTERCHANGEABLY UST rata fin [wow |e | anaase SEE FET INTERCHANOEABLTY UST rass |v [won [re SEE FET INTERCHANGEABLY UST urate |in fue |e | ansas SEE FET INTERCHANGEABUITY UST | foiae7 |v [ce |re | anasco {SHE FET INTERCHANGEABLY UST fuiaa1 | nc re | 2Navee SEE PET INTERCHANGEABLY UST rea | [wen fre | anaase SHE FET INTERCHANGEABLITY UST raza | [wen [re | ansase SEE FET INTERCHANGEABLY UST fuiaze |v [cw [re | ansaee SEE FET INTERCHANOEABLITY UST jizz |v |ucn [re SEE PET INTERCHANGEABLITY UST furria |v |New [re | ansaso SEE ET INTERCHANGEABRITY UST foisave | [wen fre | ansaas ‘SEE FET INTERCHANOEABITY UST fuiesre fv uc [re | nero SEE FET ITERCHANOEABLITY UST Tuiesee fm ic fre | ns7a SEE FET INTERCHANGEABLY UST Juiesse in |Nc [re | 875 SEE FET INTERCHANOEABLITY UST issue fin [Ncw |re | anszas SEE FET NTERCHANOEABLTY UST fusc00 iv [co [re | ansas {SEE PET INTERCHANOEABIITY UST voce in |NcH re | anause SEE FET INTERCHANOEABIITY UST 2002 fn [ncn |e SEE FET INTERGUNOEAMTY UST fusor in [nce re | ansase SE FET INTERCHANGEABLY UST fusorr (mv [ncn [re | ansase SEE FET INTERCHANGEABLY UST foso12 | |New fre | 2nsaso SEE FETINTERCHANOEABLITY UST fuczo. in cw |re | ansase SEE FET INTERCHANOEABITY UST jucat | [nen fre SEE FET INTERCHANGEABUTY UST fucioo |v cw [re | ansoen ‘SEE FET INTERCHANGEABLITY UST fucrro fm [cw fre | 2nsaco SEE FET NTEROUANGEABITY UST ucts |v nc |re | anaase SEE FET INTERCHANGEABLY UST ucts fm fac |e SEE FET INTERCHANGEABLY UST fuciss |v fnew fre | ansoee SEE FET INTERCHANGEABLY UST fvcaoo in |NcH |e SE FET INTERCHANGEABLITY UST fuczor | |New fre | asa SE FET INTERCHANGEABLY UST fucaro 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| MEMEO GIN 1G NaN 20 10 7 1 1 ween aw || anaate 3 | co | ase | 3] ass tem pao, fw | | ansaar |e |e] ass anim wees || a | | een as “| ae ae om araoos |x Iw | | anaase |e te] ase gem aeons | w ||anaaar x» | = to | Ges sim fnraoar fx fw a | | ancaoo = pe ~ | an nm mean |n |u a | | nase 3 | os | cst em mecom (mw a | | anaear 3 |e S| Gee Geom fmeaoro (mw > | | ase Bf it | css tom neon uw Jw a = | | as nm econ (w 3 | ve | ase mor om fmeaors fu 3 || anasse tr | ass | 8] aes eo wears | [wa || dnasse eo | tte | Bs | sos ie rears [x fw a || ansooo 2 | ae || css anim weiss um w 3 | | dnaeo % | as || Gs oe om wesoot—|u[u io] | Se | yas || css seo weer [mnie] | Su s S| css "tet ae 3408 TEXAS, INSTRUMENTSTRANSISTOR INTERCHANGEABILITY NONREGISTERED FIELD-EFFECT TRANSISTORS —_—_———— SEERA GURACTERTICS 1 samo | toss rm E 3) mucnen | oan una ‘Onveatest | ‘cate bd |G | ont panameran i 5 souvaine | voce | jen) June max] mm max | max | ova MAK @ [omar tmatfimmber tombe] (oF tm Ineeoooa Jw Jp vo] ] arse 20 3 | os ae wm urea Im | to 2 2 43 ani ures = | [wo 2 2 “3 | ass ae fwrexos |u| to] | sos 8 ae | “S fwrsce [mw of | snaon | sm0 33 fwecso0e = [mw to] | anaes x | te ‘ wero [wr tol | anaor 33. | s1078 7) cus tse om meen (upto 2 | “107s 7 | oss ism |mre«007 Im les 40 st 7 | css 2m ™ Imrewooe tm po | ste 7| oss in im frescos =| |p 3 a | vss 7| os in om nrewro—|u|p a | iss >| ass am om areas [w rs «| aaas | 7 | ass anim Iwerion| |e | 3 a | te as | >| Gus ae m fries dw | as | ssa 273 | 3 | Ges asm fwewor2 (wn w | ‘ou | ass 7 | css amo Imwraeaa | [wo 1no823 | sm 3 7) as an Iworiez” fw fw 3 ar | aussie a | 20 a7s | 7 | ass an om fweres mf ansess 3 | ts ws >| oss an om fwerios [MIN ansos2 3 | 2 uss | 7 | ass arm ines tm [wo aNsrat = | se 36 7) as an im rie = |u| ansree 3 | to | 2s 3 | oss ae om Iwerior =m fu 3 neve 2 | tm ‘ S| css ian ow furricg dm | 3 far | arcane a | 1sae as [os | ease ie Inerion _|wJw > for | arose a | sm ae 7) was wert Tm IN 2 for | anasrs x» | 320 sa [4s | ous ise om weri2 Tm | [ar | annie a | tas ts werizo Im Nw 3 | oe tia fas | ous 7m uray Iw fw vo | 300 wo [as | ous on im nena |u| to a | 220 oie] 4s | cus yee ist Iles Jon | ansase @ | au a 7 | Me 2300 ik sco inal 3 naw a | te 2 5] ous tae om aor ‘tral > Teaas is | 190 2 3 | as tan mesos nal imate 3] ous | as a} oases te misto ual anaset x | » nestt [naw inaest we | os = peso [nal anoeaz ~ | v0 = east inal 3 inoeat x» | a2 * neszz [nal nase > | to z sis (nal) noe ze | az x ec Texas INSTRUMENTS 3409TRANSISTOR INTERCHANGEABILITY NONREGISTERED FIELD-EFFECT TRANSISTORS —_—— TEECTRCAL CHARACTERISTICS 5 " sar | toss me f esracemet | pram rumnen ‘on weanst | GATE ed Cee | omnen PARAMETER 5 rouvauet | vourace | “Ip(en) [min max] MIN MAX | MAX SYMBOL MAX @ f (0) [temas tomas] combo) (ome | tw ee F590 fealN 9 Ne 0 10 = F531 NaN 3 2N3400 Ey 12 ao F832 NalN 3 2s 7 110 s esa NAN 2Na460 ~» | 42 va e580 nal 3 25 2s | ces ser ese NAN 3 3 as | cess i3rF 0M Nese NAN 25 25 | cS 1h NFS83 NaN 25 25 | css 1PF sea aly 3 15 25 | ces aR esas. NaN 5 25) css isp rasa NAIN 3 2 | 10 so | css 25pm erry NAN 3 25 | 100. so | cess 25°F 0M reas NaN a 20 | 130 Pa eee nese NAN 20 | 100. so | crs 25rF 0M NFSA87 NAN annase 25 15 1s 7 | css am OM NS4s8 NAN 3 2N8439 25 29 1555 7 | oss ar OM hrsase Ina[N 9 2Nsse 25 416 28 7 | ces an Nrsaas nal 9 erry 2 410 a s | ces irr om F546 Nal 3 Err 2 220 35 | ces trem N55 NaN ob S| css 12m hrse38 nay 72NAa91 30 | 30 vo | cess am e539 NaN 2nase2 xo | 2 to | cess ame F560 NaN 3 2NA393 30 * 10} css 4mm esas [nal Nass vo | ao wo | css ase om sess INa[N 9 72NAaS7 so [1s 10 | cess ashe om su2028 med so | asia ey su2029 in| so | as “ su20a1 in JN so | 88 * suz0s2 No 2Nss4s 0 110 1 suz033 me JN 2N8845 50 320 25 suz0s4 me JN 2NssA7 50 v0 vs suzoas mw JN 2NSSA7 0 520 2s su20%6 Iw [No N54, 20 +. suzovea |i Ns 2Ns545 ” a suzos [IN ” 15. suz0%9 me ssa 20 1 fsuzoma [mw [No 2547 0 18 1 sxa819 nN 3 [ar | anseaorsa 25 220 265 8 | css are om sx9820 In ps Jar | astsaaoven ea aus as 22] cess err sta in [No sia x S13 175 o| ces arr im ee 3410 TEXAS, INSTRUMENTSTRANSISTOR INTERCHANGEABILITY NONREGISTERED FIELD-EFFECT TRANSISTORS _—— RTT 1 RATED: loss om |Sle gl E| wuduen | So NUMBER #| (OR NEAREST OATE a Se OTHER PARAMETER, Z BQUIVALENT VoutAdt | *lo(en) pam acpoan| | eee eos a im mee SS ae eee ee me RR) |S ee ie me RAG | et ee ee Pe HIG tL Les ee fee ee oe se ealpe or kairo esp meee a seem ate se eel omc se ei eeeee (team cee aes) eerie a me ORRIE Ba esol eee (ts) feces epee ip letli= San eran ae ee tale tee ie a pec acim lapel pee ea ae Se Ea AA aes ea nileshse ies eee ee males Sar me ORR SP] se TE apis Ree elle sent |e Sie Pe lel lel | cece | sao SF mensanle pelea pes Saleaoon ol me LE Se ace re neem Ba fecun nee ike sa eal ABE een ce See ele ea gales oS realest a sles er: a | sss OR asso | eso ae al soe ee eee ese pe Bei ere wma ee eee a lft bossa n lente ean scotia greg ge a ete ae (eee pe eset AR BA ees) trees pease BAD die Fs see aime yalea | a=omenl on gee 2a 2] ea sec || eel) aisech amen Fe Texas INSTRUMENTS 31TRANSISTOR INTERCHANGEABILITY NONREGISTERED FIELD-EFFECT TRANSISTORS RETRIAL RAST 7 1 sar | toss re | emncenerr | crane nummer E onneanet | oATE bd | Ce | onan paRAMerER 5 ‘EQUIVALENT voutace | tofen) lm max] mw wax | wax src WAX @ F omar tmailtmmer tombe] or ) nas lm wo esas ~o | 3s tase sw 3 3 | v0 m| oss ase om zat sly 3 3 | ‘te jo | css tse oes si [ny 3 eo | ue | oss imei a [wo wo | 100 7 | ass asm mn > | ‘ns im |e fo | oes mf wo | aus hae Yor [x wo | ms 4 vaso fm fre | fs fizsoa fin fw | aes ast im foe ‘o | as 4 jase dm wo wo | os tasz min 3 3 | So 10 ass am ow ass fm foe a | 540 S10 ass ian ase im fre usse » | w | ass “am m ass In [w > aeaseo 2 | 20100 | om en iM ase min 3 nates 20 | “too | ass ae im as n|n 3 nsoer a | Seo s10 ass an ars sw ~ | 32 £ a [css Sw fant [wo wo | aa = 2) ass an taza si|N 3 ~ | 1 * 2] ass Sem mst Iw ~ | 1 ‘ 2 | ass Sm ow zs ale 3 | ts * 2| ass Sm im fawn dat [wo | ses * a | ass rm tne sin 3 | 38 v3 | ass me donee ale 3 | 3s 3 | ase tm te si fea wo | 3s 3 3] ess i ans [wo wo | ae 3 «| ass mn zee sin 3 x | 3s 3 | ass ie ass sin 3 | 3s 3 cus im a90 si fe = | se ess im a [wo ~ | 20 ut son im 300 afr 3 a | “Sev wa | | aus ss im sor slp | ito ta | | aus tae mw aoe ifr x | 3 y | as “7mm sos a leo wo | ves w | as 7 w vee fe wo | sas 2 | as 7m om iste st |e anssar 2 | 20 | 1020 ess asm om usta sin 2nsoer | tow eto ess iam — 3412 TEXAS INSTRUMENTSTRANSISTOR INTERCHANGEABILITY NONREGISTERED FIELD-EFFECT TRANSISTORS —— . um | toss rm B | macnn | cea mem E ones | can bl | one parameter 5 reuvaume | vousoe | oem fmm max] mm max | max] sr MAX @ f | L 1 [tmat teatime) toma of lua fac erry =o | 138 as «| as an om luz | IN mnsase = | ‘ss s ¢| aes ae om wa tml nase o | ais | 3s ¢| ass ian om fr fn inssee * = S| as ae om fora dow anssae 2 w| os enw joe dN araase * 2s | oss Seow fost owe = i Ww] ass sm ik fret ase o w| as sm om forms fav fw % aia ass an jose fale avast x to oss tm im jw dein inaseo x cus om jst dw nanos x ous tam fuisza dae [wo naar ‘wm | aso @ | ass tam jis few maar wo | i ¢| ass tae om fois fun mnsser eo | a 1 S| ass ae om fois fw x | tts s o | ass aim foam masse | as a 3) ass tan foie few ens xo | tas + ¢| ass an om owe mn ta | | aus Sem fore fw T7 | i to] ous Sem fe nf + * fame to 173 2 |e | as nm mae I neous x | Ss + rae jcc fu nace wo |i | ess amo jot tm masse wo | ‘ae Es oss anim im fe ~ | xs 2 out an wm im fre aause x | 3 | ass lm mle 2 maa x ie oss ae im [ne mnaeo % £ oss teow mle a ansase ~» | aa > 2 | ass ww in 3 wo | ine 2 | ass mw in 3 anssei we | sz 2 S| ass sew Coe nsseo a | 48 ie S| ass ise om [na ea » | 18 rs ) ass isn mln 3 | 43 ‘+ | css ism in mln anaes x | io a] css te fe fee so .| 1020 “ | ass amon mle > isso wo | 7 | os anim IN |n mnssea wo | lan | as >| css ami mle 3 nso = | ts > >| oss anim mle masse s_| ito | a wl os em —_—— TEXAS, INSTRUMENTS 3413TRANSISTOR INTERCHANGEABILITY NONREGISTERED FIELD-EFFECT TRANSISTORS Sacra CRATES J " ur | os 1m r ranacumm | RAB una con vuaast | oatt bd | Ge] orem ana 5 souvamer | voursoe | “o(on) wax | max | sro. MAX @ mu toma | i) ecaet ix [No INS6T ” = 2) ass sm 1ve290 IN |X must F) | ass 7m east mn 3 ar » a3 | css 7M vea0o mp 2Na031 » » + | css 25M Ee oe vesat Im [po nares 30 | css ato im |p aro » o | cass vea20 mp3 name » oss vera m|y 3 238 a cro mn a snes o eres IN| 3 asses * lucror mn 3 muss » vers NN 2N0823 » Jocrae [wl a 2x30 Py versa im [nN mats » ere fi mss x0 verst im IN 3 2st EF juc7s2 ND [ 269458 0 versa mfx 3 ass » uerse fn 3 ass » ess im |X 3 mass » | |e verse im [xa Ouse ry eats mrs naan 2 cast mr 3 nase 2 eas me aon Es cess mPa mason a | 2 se vcess mfr 3 maser a | ae ive vero [mF io * 24 css san om verze fm fro anes x | +390 ass 1M jucanso fw lw asses wo | as + ueasz | IN aNs506 oo | Sas ® vena = JN JN aussa7 o | ‘4s t vezr2s = [MN 23045 » | sas t vase [w [n> 2x20 | sas + vezi» = JN JN 2nsou7 » | 26 a veaz Jw | 2Nsou7 » | s if veniaa [me [N 2nsou7 oe] 2 2 vane (m|w aNso7 ~» | ss vares = |wPc aso » | ‘0 as| ass im om — 34 TEXAS, INSTRUMENTSTRANSISTOR INTERCHANGEABILITY REGISTERED UNWUNCTION TRANSISTORS al SHARAGTERATICN £ 1 j nurcacement | PO — " eel tomy | en ima | oar | war aueen un | rw] anwar wo | ares | ana 7 fa] aN un | ew] angen fo | are sae wz] 2 2Naemn un | oa] anaes wo | Gee 148 ete la 290 un | ra anaso wo | aan 04a sia] a ‘2Nao4 ur | px | auaron woo {san “sha . 2 aero un | AN] anapon wo | san saa : 2 aun un | ax] aunt wm | Gas 8 . 2 Evan ur | px] aapia wo | Aras soa 2 Dann un [ow] arn oo | aren see . 2 ur un | sx | anuva wo | Gen ‘sos . 2 urn tun | nn | guaran wo | ze so ‘ 2 ur | pa | navn wo | an see . 2 un | rw] nara wo | aren an7s a ose un | nw] anapaa wo | was a7 2 tun | pa] anapon wm | was ans 2 un | pw wm | aan ans 2 un | ow wo | sis 4275 [2 un | pw wo | saa 7s 2 un | aw wo | sant an75 ry un | ex| amen ao | ae pvt 2 rae aso | azen a8 a | un | ex a | 47an oe e | o3 un | ax a0 | an 7.0 3 | a un | pa ao | ase 45.70 0 un | rx meee ao | a7as sha s |» |]. tn | px] ease ao | azas ‘sean s |= un | px] use ao | 478 va oe] ef un | pw] zur a0 | 4201 ‘saa s |] un | ex] meena aso | eae S102 s |» |. un | pm) asco ao | San ie a] elu un | ea] aun ao | a7ee eae » |e un |x| musa ao | ars seas ~ | 2 un | ew] mame wo | was | oan 7 || a tun | ra] anana ao | a0 eas s [a ]u un | ea] anaan ao | sae perry s || a um |x| anaoas wo | eaen | eae e| ea un | rx] avers wo | 4700 a7 s |» | a un | aw] aweraa ao | was a7 s|~]a un | pw] nanan mo | was ‘23s o |e] ou un | ra 30 | ane ars s|[mlu ur | ew aso | aaan a7 s |» | un | ne ao | aan as al erode ee TEXAS, INSTRUMENTS. 36 "INCORPORATEDTRANSISTOR INTERCHANGEABILITY REGISTERED UNIJUNCTION TRANSISTORS CHARACTERISTICS i & EE ‘TYPE sje n . ' A nuwaer i 3 | rertacamenr | "2 | w | | ose my | ear ima | war | ow um | ex| menos ‘300 O75 7] s | un | x] aeasar x0 on a} a] un | ex] 2nap00 300 fos 2 | wo] 4 un | “0 a9 + |» | 2 un | en] awrara 00 are . |= ur | pw] anaes ‘00 ‘ars 2 | 2» ur | ew | 2uaass 0 708s «| 2 un | 00 ‘seat s | 4 un | wo | aren on . | un | es fo | a29h os elles un | oe 20 | aya “sb.t0 a ur | ra 2Nave0 wo | “us ‘oo 1 | 2 aah un | pw] aes wo | azaa 3675 aplasia as ans un | pw] 2aase ao | 4791 Jos a] a] a ass un | pa] ness ao | 4793 os 6 | 4 | os 2Nut70 um | x] 2a mo | asa ‘sors 2] s]% part on | ew | aasr mo | aan Fos 7 Ts fa rd un | ex] anaes wo | 49 ‘ssa 2] 3s] oa uae un | px] anaapt ao | tan aha a [2 | o muses un | pa] naar mo | aia om 2) 2 | a arsed un | pw] auaasa wo | aa Peas z [0 a9 un | px | zoe mo | tat ‘S09 aa aan un | pw] nana wo | 42 ‘aoa 2 | 2 Ear) un | pw wo | an yeas 2] 4 seat un | ea wo [eas 7a 7. |o 2anso27 pat |mmen| arreoa7 ‘See Det Shot On A716027 2nso2s ur |rien | A7reo28 ‘Ses Dot Shot On ATTSG28 anon On |" oo | 55a2 542 1 fs [om Noni un | pw wo | sas ee + fw fo Nati rut | mam Son 2N6116 ote Shoat 2NeNT7 rut |pwm| 2N6117 S00 2N6117 Dae Sheet anon" rut |mwen| aNsrie Seo 2N6I18 Doe Shot 2NONI9: pur | PNeN eal 6120 nn |r ana ur [par 2nsi38 ur |e see 3416 TEXAS INSTRUMENTSTRANSISTOR INTERCHANGEABILITY NONREGISTERED UNWUNCTION TRANSISTORS a els] E we All es numaer | {i | $ | repracemenr | 'O ‘8 " v 'e | '620 iji)° ee [a ale) ae [ileal See Poa Hl ed So | BER) So me [afl ae ce |tiahsc] se ae lz lle Se fs] see eee Bets] Se eee: Taam Yo fn re [ae an ee a sie] Re an E: SP PHS) Be, BE} 3 | 3/3 TEXAS, INSTRUMENTSTransistor Data SheetsTRANSISTOR DATA SHEETS CONTENTS In this section are data sheets for most of the Texas Instruments line of standard, low-power silicon transistors. (For reference 10 TI's ine of silicon power transistors see either Section 0, Type Number Index, or The Power Semiconductor Data Book. Excluded from this volume are data sheets for certain obsolescent types listed and £0 indicated in Section 0, Type Number Index, Loose-lest data sheets for these devices may be available upon request. DERIVED TYPES Many of the JEDEC-registered types are available in repackaged form. The designations of these repackaged devices are derived from the original JEDEG type numbers by replacing the 2N or 3N prefix with a prefix explained in the table below. “Repackaging” may mean providing a platic-encapsulated (Silectt) equivalant for a metal-cesed type (for example, the AS12222 is 0 Silect 10C-mil pin-ircle equivalent for the metal-cased 2N2222) or perhaps different basing (lead locations) ‘rom the registered type (for example, the AST3004 is a Silect 100-mil pin-ircle equivalent of the plastic-encapsulated, 2N3904 which is registered with the ininelead 70-92 package.) In the case of the A&T prefix for unmounted transistor chips, “repackaging” means no packege at all In any case, the specifications for the pretixed devices are as close to the registered devices as packaging will pormit. PREFIXES FOR REPACKAGED TRANSISTORS. AST Microsilect* (obsolescent, not covered in this book) ‘ast | _ Unencpauated wars chips (ot covered ints bok) ast, ast ae tnanaisron | VEAP CED EAD 269! bee me at ae 7 fate foun Dron Gu Pogue Uniuntion | Gaede Gow Arade ner ee eso a Silect' Package “Multijunetion Base Emitter Collector an, at an 123 Taansron | A TAD TERS ©) baie eee Provunmais niuntn | arose Cred Gr 5 at ne ied TO-82 Silectt Package “Muitijunetion ‘Emitter Bese Collectoreat [Unencapeulated beamn-lead transistor chips (not covered in this book) est Beam-teod transistors, 100-mil pin circle (not covered in this book) } eT Beam-Lead transistors, 200-mil pin circle {not covered in this book) vr ae tec this book) oer Dual transistors, short-can version of TO-78 package oar Quod transistors, TO-116 plastic dduat-in-tine package ORGANIZATION Data Sheets are organized in alphanumeric order with numbers taking precedence over letters. The exception to this it that derived types are placed immediately after the registered types from which they were derived. CHIP.CHARACTERIZATION REFERENCE . ‘Transistor chip families are characterized in Seotion 6. Reference to the related chip family is made on the lower righthand corner of each data sheet, if appropriate, Exceptions: ‘© Grown junetion bars are not characterized. (© Bar-type unijunetion transistors are not characterized. (© When the observed values of the characteristics of the basic chips are not applicable to specific devices becuse of hhighty selective screening or special diffusions, chip-family references are omitted. © Transistor types containing two darlington-connected chips do have the chip-femily reference but it should be noted that while the characterization data does apply to the individual chips, it does not apply directly to the darlington-connected pairs.TYPE 2N117 N-P-N GROWN-JUNCTION SILICON TRANSISTOR BULLETIN NO. DLS 88000, MARCH 1968 9 to 20 beta spread Specifically designed for high gain at high temperatures mechanical data ‘Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams, cae pee) og ieee | Lao i oA absolute maximum ratings at 25°C amblent texcept where advanced tomparatvre ere Indlated! Collector Voltage Referred to Bae. . + &v Emitter Voltage Referred to Base... Bg fy) Collector Current. ee : sss 85 mA pica) 9 00000600 90 4 4 toe. 88 mA Collector Dissipation $e ee 180 mw S| Sp ttt tino kw at 150°C Fe 50 mW [unction temperature Maximum Range... ce ee OSE to 178°C common base design characteristics at T] = 25°C tercept where edvanced tempereives are Indlnted) 7 envenonanon—Compared we 10 shor, 208 nd Yond wth 7g PRINTED IN USA Texas, INSTRUMENTS “ RAS MSTROMENS RESERVES THE MGT TO. MARE NGS AT ANY TIME oer orricu wox Holt + DALLAS, TEKAR Ta882 TW OWDER TO IMPROVE ORION AO TO SUPPLY THE AST PEDOUCT POSETYPE 2N1I8 N-P-N GROWN-JUNCTION SILICON TRANSISTOR BULLETIN NO. DLS 89697, MARCH 1958 18 to 40 beta spread Specifically designed for high goin at high temperatures mechanical date "Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams. ESS 0 | absolute maximum ratings at 25°C amblent {exces where edvenced tempertures or indlated! Collector Voltage Referred to Base aaah "sy fame Wingeneetonee S ay Grr. Cue Set bt asim Sie bbb bbl tt lama Calor Dian Slept se aw wr ire SEPP bb tb 2 2 too mw Junction temperature Trem Range 6 oda - 5 + 05°C to 4175°C t= thm = 2m Camel Ne —Campae 18s at, 10 ad Lee a we mnto MUSA. ara 42 TEXAS, INSTRUMENTS oer comca ax ott» aan, TAS iat {es mgRONENS MEISTER 10 uae vanes aT eT [ORDER TO IMPROVE OSL AMD TO SOP. TH ST ODOC PES18 to mechanical date TYPE 2N118A N-P-N GROWN-JUNCTION SILICON TRANSISTOR BULLETIN NO, OLS 79808, MARCH 1968—REVISED MARCH 1973 86 beta spread Specifically designed for high gain at high temperatures Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams. t 1 couse oe =o} Stone Lt ome mae chrolore meximom ratings at 25°C amblent tonagt tor etened tempore we Ide Collector Voltage Referred to Base Emitter Voltage Referred to Base Collector Current Emitter Current. Collector Dissipation | at 100°C } at 150°C junction temperature ‘Maximum Range . 2 50 mw “65°C to +175°C common base design characteristics at Tj = 25°C_texept where advanced temperatures ore indeatedl tat condone ssecee | mon | ate Calecor Breakdown Vatugs|—te= Sa | reo | vat Calc Cato Curent) | Vou = 2 | atior-c} | Vee = 5¥ o fa suse} | vee= 57 | ts np Ingedce Veu= eo | @ | om ue ete Vee= a | 12 | ho FovsuckVtage ao | Ven = 5 fiom | Kins arent Trier Rato | Vex = 5¥ 097s | 0890 Pot Gain Ver = 2 3 o tise Fewe"t Ver = 57 a o Froquncy Ct Veo= 5 ime ‘Output Capacitance (Ime) | Veg= SV 7 2 nal Sstton Resins” gz Zana wo | ao | oom =n: R, = 28 Conran Neon 8m it, 10nd een wn ara Pinto ms usa TEXAS, INSTRUMENTS Hs ROT ENS THE GT 10 MAE UGE AT wh TE our ormce nox tnt 2 DALLA, TAS Pena W-OROER TO aPEDYE OLICK HNO" TO SuPRY THE AST PRODUCT POSE, a3TYPE 2N1I9. N-P-N GROWN-JUNCTION SILICON TRANSISTOR BULLETIN NO. OLS S800, MARCH 1 36 to 86 beta spread Specifically designed for high gain at high temperatures mechanical date ‘Welded case with glast-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams. ee =} 2 uaoe oon te Suet “ot absolute maximum ratings at 25°C ambient tescept where edvonced tempersters ere Indiated] Collector Voltage Referred to Base... : : to AY Emitter Voltage Referred to Base... eee ee 1v Collector Current... : : 5 +5 95 mA Emitter Current : ee - 2. 25 mA Collector Dissipation ee ee ew, at 100°C. 100 mw at 150°C 50 mW Iunction temperature ‘Maximum Range... : 6560 + + B5°C to +175°C common base design characteristics at Tj = 25°C tercept where advanced temparotres ove indicotd | min, [2000 | wwe. | one Calor Breakdown Voog® 6 vat ‘alate Cutt Carrent) 2 ry ‘ioo-c) | Vex= » ” asc} | Veo= 2 oA ha | tage impedance aces Onn Bax | OetatAdtance 0 | oe] tz | ante ha | Feedback Vote Ratio | a | i009 ‘ars hm | Corte Tanster Ratio oars | ~ase | 0509 Pe, | Power aint @ Pn ne | Nae Fewest a rn fa |Freueney Co ‘ me a | Ont Capctancs im) 7 ni Ree | Setraon Resstance® im | hm cannes tit «thy I Ry = 20k ‘Laman in —Compara 1 ohn tty, 100 tnd wate SE EEEEEEEEe! a4 TEXAS, INSTRUMENTS owt ornven tox wit sone, Tesh rasta HAS. STUMENTS ESRES THE HT 10 MAKE HANGS AT ANT TM "WONDER TO TMPROVE DESIGN AND TO SUPLY THE REST PROQUCT POSGLE.TYPE 2N120 N-P-N GROWN-JUNCTION SILICON TRANSISTOR 76 to 333 beta spread Specifically designed for high gain at high temperatures mechanical deta ‘Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams. absolute maximum ratings at 25°C ambient texcept where edvanced temperctores ore indicated! Collector Voltage Referred to Base “sv Emitter Voltage Referred to Base foe Bae iv Collector. Current te 555 Sot 5 mk Emitter Current Po De 25 ma. Collector Dissipation 150 mw at 100° 100 mw at 150°C 50 mW Junction temperature . Maximum Range. 65°C to +175°C common base design characteristes at Tj = 25°C (exept where odvenced tompereiors art indkotdl test conditions min,_[Sener_| max. oni ‘Weso] _ ColcerBrakiown votage | Te= SA [ie-0 | vat] Nexo" | atc cao Corat) | ves = Vf ie =0 2 ” 10? ¢} » os asec} 2° os ne | ape impedance a | nm hon | Capa Aditance as | 12 | ammo tee |Feedback Vtage Rao oo | 1 io tin | Curent YansterRaio =a99 | ‘0987 Pee | Power ais? es & NF | Nae gare 2 ® fax | Frequency Cott 7 me Coy | Output Cpucionce ime) 7 a es | Situation Resist le = Sma wo | a0 Ohm conmen Unie Yhg= 1B, = 2 ‘Canal an—Conar 1 he in, 108 ed gt with TEXAS, INSTRUMENTS ets stows SMS HE MEAT YO ANE CANES A A Tg oor onmce wx sis » Duan, TEA rset |W OWDER TO TMPEOVE DESIGN AO TO SUPPLY THE AEST PRODUCT POSSETYPES 2N243, 2N244 N-P-N GROWN-JUNCTION SILICON TRANSISTORS BULLETIN NO. OLS 612208, DECEMBER 1961 mechanical date The transistor is in an oval welded package with glass-to-metal hermetic seal between case and leads. Unit weight it approximately 1 gram. The mounting clip is hardware supplied with the transistor. [AL LEADS ARE INSULATED FROM THE CASE ane $988 on, oan +000 ia8t0 ‘obsolute maximum ratings at 25°C case temperature (unless otherwise noted) CC Jp dbo cUGcunUoGuodbDoubonGG oy Clb occucaugsu00dcu0uGc00Gc0G 60 ma Total Device Dissipation (see note 1). 750 mw Collector Junction Operating Temperature... ee ee +150°C Storege Towporivns Nenue cece) ee iT 55% 10 +150°C OTE: 1, Dna 50% ce tne a the 6 2, HEC pd de 46 Texas INSTRUMENTSTYPES 2N243, 2N244 N-P-N GROWN-JUNCTION SILICON TRANSISTORS —————— slectrical characteristics ct 25°C case temperature (unless otherwise noted) Parameter mie yp | max” | onl Tose Gale Cutt Cort TT ae Tso Golctor Cato Creat 6 ca cso Clee tase irsakdown Votone @ ¥ ‘Weao _Gollecer Enter Breakdown Velions a v Rese Enter Voto 7 ‘C Collector ter Sarton 350" | cher asin ‘AE Corner Bose Forwerd Great a9 [a9 | 098 ‘Troster Reto 0961 |-097 | “ose9 Tha AC Comment Tape Impedance 2] 0 | oe Bx} s00xI0] POWER GAIN TEST CIRCUIT 100 ts ss 78 Tran eames on tapas Shey te fe Hoe pte ln, TEXAS, INS TRUMENTS ar ‘AAS WSTROMENTS RESERVES, THE GAT TO MAKE CHANGES A ANY TIME 1 OFDER TO TPEOVE DESIGN ARO TO SUPPLY THE AST PRODUCT POSE,TYPE 2N332 N-P-N GROWN-JUNCTION SILICON TRANSISTOR BULLETIN NO. OLS 691098, MARCH 1960 Beta From 9 to 20 Spotifically designed for high gain at high temperatures mechanical data Welded case with glass-to-metal hermetic seal between case and leads. Unit weight is approximately T gram. All JEDECTOS dimensions and notes are applicable. 7 cE msoATED FROM OSE Collector Voltage Referred to Base Emitier Voltage Referred to Base Collector Currents. Emiter Current. Device Dissipation} < at 100°C at 150°C function temperature Maximum Range... Input Impedance Stinat Adair Stern raner Pato IN USA “a TEXAS INSTRUMENTS a oer onmet wox tous « BALLAe, TEXAS 7223 NAS STROMENS RESAVES THE. GAT TO MAKE GANGS AT AN TE TW ORDER TO PROVE DESIGN AMD TO SUPLT THE EST PRODI PSSTYPE 2N333 N-P-N GROWN-JUNCTION SILICON TRANSISTOR BULLETIN NO, DLS 801096, MARCH 1980 Beta From 18 to 40 Specifically designed for high gain at high temperatures mechanical date Welded case with glamstometal hermetic seal between case. and leads. Unit wei 1 gram. All JEDEC TO-S dimensions and notes are applicable: - approximately ai LEAS LATIN FROM ASE cbeolute manimum ratings at 25°C emblent [except where advanced temperatures are Indicated] Gollector Voltage Referred to Bae. . . 1 1 1... ee AY Emitter Voltage Referred to Bae ©). ff) 2) ll tw Collector Current ee Fe Dot kms Emitter Curret. 2 2 2 oD DoDD of ot lags ma Device Disipation Pos. 2 2 2 2 2 tof of of aso mw at lore } 6 bd6964 44 22D 100 mw ewe; ct tof somw Junction temperature Maximum Range Be etc lec common bave design charectertsties at Ty 25°C [except where advanced temperatures are Indlested] Galleiorroakdown Vo Collector Eat ean “Common Enter ttetbe {Venretlonsl Helue—Compared Yo 1000 chm rsioer, 1000 con and | eycle bend width Texas, INSTRUMENTS oe ee coe ere ' QHDER TO IMPROVE DESIGN AND TO SUPRLY TRE EST PODOC PSSTYPE 2N334 N-P-N GROWN-JUNCTION SILICON TRANSISTOR BULLETIN NO, OLS 601097, MARCH 1960 Beta From 18 to 90 Specifically designed for high gain at high temperatures mechanical data Welded case with glass 1 gram. All JEDEC TO. Ca TT volte maximem vetings at 25°C emblent (sept whe aévneed tmparatn nae tal hermetic seal between case, and leads. Unit weight is approximately jimensions and notes are applicable. Collector Voltage Referred to Bue... - eee tt et ts AY Ermiter Voluge Refonedto Bese 2020202) Fs FF RY preity Go b 66 6 9 6 8 oo 0 oe oo fae Emitter Current... 2 2 Ste =25 mA Device Disipation } 2 2 2 2 2 2 1 2 2 2 fof foi ffs somw at 100°C Pid pbbobo bob bol off 2 100 mw at 150°C Pipi iii ol tot tf so mw function Maximum Range... 1 cee + 68°C to +175°C common base design characteristics ot T;= 25°C [except where advanced tempersture are Indicated] mnie USA 379 440 TEXAS, INSTRUMENTS oer once Won tis Balan, TELA Test Tes mus ASRS THE GAT To MAKE NGS AT AM Ti 1 O¥DE TO MROVE DESIGN AKO TO SUPLT TE RST PROUT POSURE.TYPE 2N335 N-P-N GROWN-JUNCTION SILICON TRANSISTOR BULLETIN No. DLS 291098. MARCH 1950 Beta From 36 to 90 Specifically designed for high gain at high temperatures mechanical data Welded cau with lasstowmetal hermetis seal beween cate and lead, Unit weight is approximate! 1 gram. All JEDEC TOSS dimensions and notes are appl " . ALL LEAS SHAT FROM SE ‘absolute maximum ratings at 25°C ambient {except where advanced temperatures ate indicated! Collector Voltage Referred to Base . BY Emitter Voltage Referted to Base : aly, Collector Current 225 mA Emitter Current. | ‘ olor DD bb 12s ma Device Dissipation } | Be : 11150 mW at 100°C) Pb fbb bl lof ff ff 100 mw at 150°C} : : 5645665 4 5 50 mW junction temperature Maximum Range ~65°C to +175°C 379 PINK IN USA TEXAS, INSTRUMENTS INCORPORATED “a teas sens eas TH MOAT TO ANKE NES A A TE oer orice nox 18» DALLAR, TXAS 78R2 woe To ara ST SUPT EST ONL POSETYPE 2N336 N-P-N GROWN-JUNCTION SILICON TRANSISTOR BULLETIN NO, DLS 691030, MARCH 1989 Beta From 76 to 333 Specifically designed for high gain at high temperatures mechanical data Welded case with glass-tommetal hermetic seal between case, and leads. Unit weight is approximately 1 gram. All JEDEG TOS dimensions and notes are applicable. . | See | absolute maximam ratings at 25°C ambient Collector Voltage Referred to Base... - oe AY Emitter Voltage Referred to Base > - . s+ s+ ey ay Collector Current. : 5 oo Doll DD 25 ma Eminer Curren. eo Se ee Device’ Dinipation | 544660456005 5 D1 1450 mW. rire } sf Pe fae) aw au 1S0;C 2) ee eee ee eee ee 50 mi junction temperature Maximum Range tout cantons i Set Were T= HA =O s Velr iy vas. kao 2 in Yas ‘sv ° OA Yas By ° saa at v Sima % Shem hat iv Tima 12 ihe her Sv ka cima xo Ret wv Zima “0.997 Ne Ima 30 db fe x Ima 2 is a, a Yas ov Ima 130 at Re. hE 22mA_le= BmA 1200 Ohm Tcammoe Emiter —{farite tanventonal Nolse—Comparad fe 1000 ohm racer, 1008 con and | cycle bard wih jo mast USA 373 a2 TEXAS, INSTRUMENTS ovr orn nox eis + SALUAR Texas 782 TOUS. sTIUMENSHESERES THE AT TO MAKE CHANGES AT KY TE 1 ORDER TO ABROVE DESIGN NO TO SUPPLY THE REST PRODUCT POSSETYPE 2N337 N-P-N GROWN-JUNCTION SILICON TRANSISTOR SULLETIN NO OLS 69265, MAY 1960-REVISED APRIL. 1060 FOR SWITCHING AND GENERAL PURPOSE APPLICATIONS © Guaranteed 20-55 DC Beta © Low Collector Capacity © 10 me min Alpha-Cutotf © High Goin at Low Levels mechanical date Welded case with glass-to-metal hermetic seal between case and leads. Unit weight is approximately 1 gram. All JEDEC TO-S dimensions and notes are applicable. be ES en T | ‘absolute maximum ratings at 25°C ambient temperature (unless otherwise noted) Collector-Bose Voltage. 7 . 1 My Collector Emitter Voltages ss ee ee ee OY Collector Current © 2 20me Emitter Current... PID DDD. ome ‘otal Device Disipation (Derate Imw/*C for Advanced Temperatures)... ss sss 125m Storage Temperature Range... Botabosocs 1 ol 1 este te 150°C leetrclcharacartic at 26°C umbanttomperatre (unis otherwie noted) peremeters on Tose | te toa er teste tre ot 15exo | carton tte atone Tee | tatetnte tare Noe Eaters ter oe ‘ nme et tpt o S| ommend att Roe = AS [Ante ownage ate a nna fom ae Tot ae + lteter Tate tte TSe] | eococtie Foret otomdertte “ [eet ict ry = Slee bet [Seent| Cooma ae Sa nr so ‘sattching characteristics Tee [Rowan Tins Tas ns FT va To 2 [mete fo Yo at te = i rerte os ie + Tem pommel ving ae ben PY 3 pnt, By le SP test circuit TO see we —_ vn “a tent ht sy oon TN oF wn ons et tn TEXAS, INSTRUMENTS ang EUs MSN ENE 1 TO AE UNE AT A roar onnce on sat aiuae, rexee 7st 1 ORDER TO TAPROVE SION ARO TO SUPPLY THC BEST PRODUC POSSETYPE 2N338 N-P-N GROWN-JUNCTION SILICON TRANSISTOR FOR SWITCHING AND GENERAL PURPOSE APPLICATIONS © Guaranteed 45-150 DC Beta. © © Low Collector Capacity © 20 me min Alpha-Cutoft © High Gain at Low Levels mechenleal date ‘Welded case with glassto-metal hermetic seal between case and leads. Unit weight is approximateh 1 gram, All JEDEC TO dimensions and notes are applicable. ee " 7 LEA ATE FROM OE absolute maximum ratings at 25°C ambient temperature (unless otherwi icaliector ase) Velioge |) 8 ee ep es be BY Collector-Emitter Voltage . ao : : i ++ 90v (Collate Girrena feet) esr eee ee mel Emitor Curent. 2 2. De ee 20ma Total Device Dissipation (Derote Ifo Advanced Temp Poe ee 2 125m Storage Temperature Range . 65°C to +150°C OF, ———— parameters tet conditions in| te | mex Toxo [aes ee 7 10 | ca temo Cet “ So |ttererten baer Yop 6 eto | tact ttn Foe * TGS | Eetetee tnaow oho i wf fw |» ‘ rm | Xf ans! “tn |e | sme] | « a [om = 2 3 | at «| w | oe Tae Yasin Cntr ye PaT om | ne se to Gt o 4 Tine me ew poss mB en pa igo FW 38pm ay Ge text eleeult Dome nur a enone corre fat heen wx et 11 cot ene sp epi ony te eae 7 ans Texas, INSTRUMENTS spe hr fy en fom pe ign coer ore wor ete + luae, TEXAS 7988 TOA WSRMENS AEE THE MT To ARE CAMS A wn TE "W-OWDER TO IMPROVE DESIGN AO TO SUPPLY THE BEST PRODUCT POSSETYPES 2N339 THRU 2N343 N-P-N GROWN-JUNCTION SILICON eer BULLETIN NO. OLS 702056, JUNE 1963-REVISED MARCH 1 Watt at 25°C Case Temperature Designed for ‘Audio and Servo Amplifier Applications mechanical date The transistor is in an welded packoge with glass-to-metal hermetic seal between cose ond leads. Unit ‘weight is approximately 1.5 grams. “JEDEC TO-11. ‘A non-insulated mounting clip (TI P/N 10-31-052-006) is provided with each transistor. Material is beryllium copper, cadmium plated — gold iridited. ri ‘os ae ete now me cat Chg i aE ne a fe!” * 1B EOE eC ‘ALL DIMENSIONS 1M INCHES absolute maximum ratings at 25°C case temperature (unless otherwise noted) “Collector Current. an gGoocGce ude “Total Device Dissipation (see note i)... God od fatal Device Dissipation at 100°C Case Temperature (se note?). | 2)! ‘Total Device Dissipotion ot 125°C Case Temperature (see note 1). 1. *Storage and Operating Collector Junction Temperature Range: - Storage and Operating Collector Junction Temperoture Range (T! Guarantee). - . 65° to +175*C Hectrical characteristics at 25°C case temperature (unless otherwise noted) aun_| ae [awe [mee ‘win | mes | | ee [le [mast [me ; St el ae} ae a Pa} a Perememer ‘li ot Cart ‘Ga oo Gt | iE ‘acorn se eto Toi a ‘eons aoe Tair Stor Teta We cata Sern Rs 7 Coe word (ovat Trt Rt Tarn Tp pect Tent Cue hie Te Ca Beer or EA J = "log ee ae ows | fat | fas | fae ITE 1 fae tamed tpt cpl ft erate tmp ered by Tee leona me Dit Doig Caw ope ads HEE rod tae ees TEXAS INSTRUMENTS 5 INCORPORATED. este] | we a = a ae a *) 1 #7 @] al al a] oFTYPES 2N339 THRU 2N343 N-P-N GROWN-JUNCTION SILICON TRANSISTORS ‘functional tests at 25°C case temperature perameter toot eonaltlons Ta= iw k= ‘ r Gr Common-Emitter Power Goin ‘ Vea = 73s Te = 10a aH3AT Radke Ot Y= Oty owen oain vest cRCUIT a “ uo tote Cm THERMAL CHARACTERISTICS DISSIPATION DEBATING CURVE yo igo a, 34 0 sie iis as ieee | ite = oy TNT IN USA 1 cot gn oy seem et “16 Texas, INSTRUMENTS of oa ay hon oe lg oer orvon wo ets Bnuanm, TRA TSR Tis STRMEATS RESEVES THE TO MAKE GUNG AT AY TNE 1 OfOER TO IMPROVE DESIGN AKO TO SUPPLY THE BEST FRODUT POSE79 TYPES AST404, AST404A, A8T404, ABT404A P-N-P SILICON TRANSISTORS BULLETIN NO. D8 7311078, MARCH 1873 SILECTt TRANSISTORSt FOR LOW-COST REPLACEMENT OF GERMANIUM 2N404, 2N404A © ABT404, ABT404A Have Standard 70-18 100-mil Pin-Circle Configuration © A8T404, ABT404A Have Same Outline and Basing es Motorola MPS404, MPS404A mechanical data ‘Those transistors are encapsulated in a plastic compound specitically designed for this purpose, using # highly ‘mechanized process developed by Taxes Instruments. The case will withstand soldering temperatures. without etormation. These devices exhibit stable characteristics under high-humidity conditions and are capable of meeting MIL-STD-202C, Method 1068. The transistors are incensitive to light, ‘ABT#O4, ABTAOAA sas el el NOTES: A. Lad dlametar ie not controlled in tle eae. ‘ALL JEDEC TO.92 DIMENSIONS AND NOTES ARE APPLICABLE absolute maximum ratings at 25°C free-sir temperature (unless otherwise noted) ‘ABTAO4 — ABTA04A, ‘ABTAO4 §—ABTA04A, Collector Bove Voltage. ~2V | -40V Collector-Emitter Voltage (Seo Note 1) | 1. ceo ce “V0 -35V Emitter Base Voltage 2. lets -2V 0 -25V Continuous Collector Current | |. | - oa — 150 mA Continuous Device Dissipation at (or below) 25°C Free-Air Temperature (See Note 2) 625 mw —> Continuous Device Dissipation at (or below) 25°C Lead Temperature (See Note 3). | <——1.25W ——e Storage Temperature Range. ee LL 68°C to 150°C Lead Temperature 1/16 Inch from Case for 10 Seconds NOTES: 1. Theve values apply when the base-emitter dlode fe open 100 KE, Cig < 12 9F ©, 7 < 1.8 nC when the tranaetor turns off monotonically at shown by the solid ne. ——$——— eee Pe TERMS NSTROMENS USENET TEXAS INSTRUMENTS 0 MARE OUNCES AT aN Me IW OLE To PROVE Stk ADO SOML TL HS PROT TOME INCORPORATED. aigTVPES 2N489 THRU 2N493, 2N489A THRU 2N493A, 2N489B THRU 2N493B P-N BAR-TYPE SILICON UNIJUNCTION TRANSISTORS BULLETIN NO. DLS 729190, OCTOBER 1962_REVISED MARCH 1973 Designed for Medium-Power Switching, Oscillator and Pulse Timing Circuits © Highly Stable Negative Resistance ‘and Firing Voltoge © Low Firing Current © High Pulse Current Capobilities © Simplified Cireuit Design *mechanieal dota Package outline is similar to JEDEC TO-S except for lead position. Approximate weight is one gram. eo pera sass ea rate handing THe vation in aot ids ‘at exceed 0.010. Lone menue | ‘he actual device. he pial erie goers igincaec ee eae a eee ‘the lad diameter is not controled, DIMENSIONS ARE IN INCHES UNLESS OTHERWISE SPECIFIED. ‘absolute maximum ratings at 25°C free-air temperature (unless otherwise noted) oeer™Sh™—r = c“§§€hLlrL Lc (rr LL Interbate Voltage ae eee rt nn no eS8e Note T RMS Emitter Currer : bo PDD D DD DDS rome eee meal remperature (See Note 2) 1 ds0mw See Noe 3, 4), 600 Operating Temperature Range . 65°C to 140°C Opertng Temperate Range, Sabited (See Note) e0 1 Dass te 175°C Storage Temperature Range - PEDDIE DDD DDD looses. sec lead Temperature Ne Inch from Case for 10 Seconds Ss ve ts et ee et + 260°C OTE 1, fer matnam itn tgs Feet 4 Dt inh Ye HC ir pris we to 19 7% 4 Beer eS heals pate oth te 42 n°. 4 tal tee pe sition tb kindy etal te EC ote date a 420 TEXAS, INSTRUMENTSTYPES 2N489 THRU 2N493, 2N489A THRU 2N493A, 2N489B THRU 2N493B P-N BAR-TYPE SILICON UNIJUNCTION TRANSISTORS “electrical characteristics at 25°C free-air temperature (unless otherwise noted) anaeren sr conomons vere Peg see Tc at Aa om oe mame ofa po oy af ae 7 ee Saabs oa paar a oe aa tape Te ip ee aa ris 4 4 = ite a ae : DU ies z a Veriisan — Eritter Bave-Ooe 2m, a wer orate ao ber a ot aoe io 7 ; 7 Somnnae ite 7 fz : Eger Baru FOR ty OF 6A AND Ty OF 50°C, MAX. ‘ALLOWABLE V,, WOULD Be s8VOUS, FIGURE 1— INTERBASE VOLTAGE RATING CURVE fa — STATIC INTERBASE RESISTANCE — ka We =28°C, Ving #3) 7 th oc 7 ea 3 43020100 ‘Ven ims) MAXIMUM ALLOWABLE INTERBASE VOLTAGE —v (FOR 40-mw EB, DISSIPATION) esti apn my mp sown by 15 S/N ots DEC ad date Texas INSTRUMENTSTYPES 2N489 THRU 2N493, 2N489A THRU 2N493A, 2N489B THRU 2N493B P-N BAR-TYPE SILICON UNIJUNCTION TRANSISTORS ‘PARAMETER MEASUREMENT INFORMATION Eeitor (€) FIGURE 2 —UNIJUNCTION TRANSISTOR NOMENCLATURE FIGURE 9 GENERAL STATIC EMITTER CHARACTERISTIC CURVE eee eee eee How ” lr is defined interme 1 the peck-peint vologe, Vp- by means of the equation: Vp = 7) Vu + Vp where Vy oboe! 036 voll at 25°C and decrcstt with temperature at ebou! 2 mlvlt/dep. “The cireit vied fo maonure 1) is shown in the Figure. tn thi cul B,C; and the uijunetion ranitor form relaxation orl later, cnd the remcindar of the choi! sens ax peak-oltoge detector withthe aioda D, ovtomaticolly wlrodting the vlioge Vp Te wae the cout, the “eat” button iv puthed, and My fodivuted to make the errant mater M, reed fll sole, The “cal” button then in releoved ond the value of 7) ia vend directly from the mater, with 7) = 1 corresponding to fllacale deflation of 100 at. TS, orl the fering rc: 7sen | nasr & Soka, 1.00 100 yo FIGURE $—TEST CIRCUIT FOR INTRINSIC STANDOFF RATIO (7) 422 TEXAS, INSTRUMENTS UMS MGTRUMENTS RESERVES THE MIT TO WAKE OUNCE AT ANT TO (w O¥DeR TO HPROVE DESIGN AKO TO SUPLY THE BEST PRODUCT PosTYPES 2N696, 2NGS7, 2N717, 2N718, 2N718A, 2N730, 2N731, 2N956, 2N1420, 2N1507, 2N1613, 2NT/11 ‘N SILICON TRANSISTORS 12471, MAY 1963-REVISED AUQUST 1980 Highly Reliable, Versatile Devices Designed for ‘Amplifier, Switching ond Oscillator Applications from <0.1 ma to >150 ma, de to 30 me © High Voltage + Low Leakage © Useful hye Over Wide Current Range ‘mechanical dete Device types 2N717, 2N718, 2N718A, 2N730, 2N731, and 2N956 ore in JEDEC TO-18 packages. Device types 2N696, 2NG97, 2N1420, 2N1507, 2N1613, and 2N1711 are in JEDEC TO-5 packages. ‘absolute maximum ratings at 25°C free-air temperature (unless otherwise noted) ‘BRGRS| BZ [anrvaa [EW739 [anose [ENT20 anvera awi7ty | uw ac Voge Anion ene lcemlael ae nlarsm|aaelar tern Yoog eto | 0 | @ | 9 ww | wee Collector-Emitter Voltage (See Note 2) 2 ¥ Tne Voie STS as eso Cale re 7 i 1-8 a 25% Free-Ale Temperature t tt tt t {Sea Note Indicated in Parentheses) —m-| (3) (5) ” ul ) 8 (10) 110) ‘Total Device Dissipation et (or below) 2 Ws 1 1S Ww 1 30 cy . 25°C Cose Temperature: t t +t t {See Note Indicated ia Pareatheras)—e- | (4) (6) o) o cu 4) my my Taal ara Dpotn [es ta) eas ta] ise 100°C Cose Tempersture: t tt tt t Operating Cotlector Junction Temperature Ws} | W5tt | 200 | WStt | 200 st 20 EF La ‘Storage Temperature Ronge, °C te 200°C YET sw th Snatch) opt es en fmm_eomets_sornen_ e_H4, woe mer, ata en GY be pate os 2h sear ates Sngutene tt rte pe oe el ee sae 8 BAUS cd SATAN ath sere deratog 5h ty aa —_ Gretna arte, 790, and "HUST beeps os {bow ety Siviea ara Stale wim erent aren er the aco melaeee tare Fert bow ty mms are Tbe tee Sioa ve. co ted ee TEXAS INSTRUMENTS 423TYPES 2N696, 2N697, 2N717, 2N718, 2N730, 2N731 N-P-N SILICON TRANSISTORS Leen ee ee EEE ‘electrical characteristics at 25°C free-air temperature (unless otherwise noted) sary ners Toit Sine [Bon PARAMETER, ‘TEST CONDITIONS Tos——| snare | SNOT on aaa Ne aa a aT a CC Se eee hae Ra F a canta pear Ta ee Ying tr ttre Wn sts te de fe apa a a te a tego ‘eC Ce “| = a Tea Goat Cor rm at taal State award Care aa Tag tos Ear Vato 2 eon Cicer Ena iain Wap i Tsp Gon faint ple hg iit oan Rg a at / ‘Sall-Sinal Comment = os Sie anne = To pa emer Rave ae nid neta mo [a [ue [as ae s| #] #} *)e “anna Op th Se apet Capacitance * * ” ano SEDC ca ate —————_— reste IN USA au TEXAS, INSTRUMENTS ovr ormot tox ets * DALLAR TOAA8 rast THA WSR RESERVES THE NG TO MAKE MAGS AT a TEBULLETIN NO. TYPES 2NG98, 2NG89, 2N719, 2N7I9A, 2N720, 2N720A, 2N870, ay 2N1889, 2N1890, 2N1693 N SILICON TRANSISTORS 739442, MAY 1963-REVISED MARCH 1073 Highly Reliable, Versatile Devices Designed for ‘Amplifier, Switching and Osdilctor Applications from <0.1 ma to >150 ma, de to 30 me + High Voltage + Low Leakoge + Useful hp, Over Wide Current Range mechanical deta Device typex 2N719, 2N719A, 2N720, 2N720A, 2NE70 ond 2N871 ore In JEDEC TO-18 packages’ Device types 2N69B, 2N699, 2N1889, 2N1890, and 2N1893 are In JEDEC TO-39 packages®, ‘THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE CARE ‘absolute maximum ratings at 25°C free-air temperature (unless otherwise noted) ‘anove | aneoe | 20718 [anon anraoa N70 |2N1887laneva | UNIT Cao aoe i Collector-Emitter Vottoge (See Hote 1) wo 0 wo * 100 0 0 100 ¥ Gollector-Emitter Voltage (See Note 2) 0 wo a a a 0 ¥ Enis aoe These ‘tar Gr 18 we Tal Devas a Bo [|] Saas 0 25°C FeAl fnpucoy 7 | os . (See Note Indicated in Parenthests)———e= | (3) 6) (7) o (9) 0) 3) 3) Device Dissipation at (or below) 30 20 WS 1 cry cry 30 30 25°C crops se] 3 tf] oe | w {See Note Indicated in Porenthess)—pe | (4) (0) (e) 10) (10) (10) 4 4) ‘Storage Temperature Ronge 65°C to 200°C NOTES. Twos when te bem es yg) ol a ht 2 Th vl ep whe he hse dae op can. 4 ete ty o 20°C frp a eno 437 me /%, 4 Doe nat 30°C clamp 72 we 5 Den Yo 58 ale pt oft oe of 48 eC 4 Dre ery e159 case ho 1 me 7, bre tty 3% hr omprtr t o 24 *% 1. Bt inert 758 cee opera ha to 180 me /% 4. ute vty 298°C ta mpi th te 2 me 18. bt Her 200% ce pt a hf 1 {SEDEC rhea date ‘The gRDEC rpared wut for theme vt TOS. O30 fata widun TOS wre excep oad ont Texas, INSTRUMENTS CORPORA rome inramans gorim fome i in O30 panes srorcoeed 7328 or hier mean ol need pation aoe 626 wig C2 dete inet to Tq HOC ot he fia of Aarne. or fOW a Tec 36 Gri ae Ten 100 €) aed tty te Sen BoC a Ser of B72t NC ‘Team Iogwamantsqureninn he teas 24718 ow ane ater Smenon ‘Ssrormred. end thown for ypan a7 EuraOA, IG? med NTN wh eprops ‘Sretg tector shorn Net B se T8 USES CHIP NZS 425TYPES 2N6: 2N719, 2N719A N-P-N SILICON TRANSISTORS electrical characteristics ot 25°C free-air (unless otherwise noted) 7O-18-0) a7 BATA, PARAMETER ast conpitions [To-ate| amare | —aNamm, ner TRIN MAX fain MAK] Awe AIA cto ietson Vane te Yomcto taser Yole fe “alr mice eden Vere Tne Yoo Vaeaee Ylge Tai ca 7 w ego lla oat Gat ee Boe Me ‘Tromfer Rate Yee Yates bRE EPR E-[-[-[-[- om ae Woe bem 1 Sheet, =| Waban | a @|e wile «[ se @ Sng toe a w sme fa tH 12 io i ry oat i 1 ste Sr to 1 7 H o z Tmt Yong, timer Nott Satin Yap Taal Spat Comet apt tens oa Sil Cee Me tans Yas Tim Rate Ye 3 i iH rr 1 4] we ws oe 7 a Tr ra we | we CEE Sa Spt Ne omen Capt hanes HE Snot pe Me Feet Cove Tour Rae Sa Sige a) Senta Tah tae 7 Se Opt Out Capes ” a ” Py into mUSA. 426 TEXAS, INSTRUMENTS oer ormce pox vor » Data, TEXAS Tass NMS MSROMENS REEVES THE EAT TO MAKE NGS AT AY TiTYPES 2N696, 2N697, 2N717, 2N718, 2N718A, 2N730, 2N731, 2N956, 2N1420, 2N1507, 2N1613, 2NT/11 sxssreulbPM SICON TRANSISTORS Highly Reliable, Versatile Devices Designed for ‘Amplifier, Switching ond Oscillator Applications from <0.1 ma to >150 ma, de to 30 me + High Voltage + Low Leakage + Useful hp Over Wide Current Range mechanical date Device types 2N717, 2N718, 2N718A, 2N730, 2N731, and 2N9S6 are in JEDEC TO-18 packages. Device types 2N696, 2N697, 2N1420, 2N1507, 2N1613, and 2N1711 are in JEDEC TO-5 packages. jo Tos ou ‘absolute maximum ratings at 25°C free-air temperature (unless otherwise noted) BREGE | ANTI Tanriea [B30 [anvse [ENT429 fawiera wi7iy [uN (lca esa Yolioge @foets [ets le pw ps ty ColeorEnier Yotope (oe tow) | | @ | 0 | | so | -s| so] 0 [wv Cole EntorYoope (ne Het 2) 2 v Emitter-Rose Voltage 5 5 7 | 3s 7 7 7 ¥ Collar Garent 18 we Tell Davis Dispoion at (w babe) | 06 | ea] 05 | 0s | 05 Ca 25°C ewe Tempura + | tt tt (See Note indkated in Portree | 3) | (5) ola co | ao, Tote Devin Disption ot (or Below) 2] 15 ws [| 20 [30 | 80] w 25°C Case Tompartoa + | tt id a ‘(See Note Indicated in Parentheses)—e- | (4) (6) (8) (6) a) (OF mm) a) Tote Govier Oispation ot a 100% Coa Temperate + | + tt + ‘Opacing Coco uncon Tomperators | 17ST | STF | 200 _[ WSF | W00 | st | 200 | m0 | * Stroy Temperate fone IST te O° {01.1 an spi woe he sr ice Fg) ae en tex tmtrmants_yorotns ie type 0086, Wee nur, ata, ead ZA0G07 me be copa ee 5 tee amy Boe Ngee ef BRU" ini cpr ene ‘4 Borate tnsariy to 75°C case tampunives at the ty of 133 mw/C. Semele eesareeeeeer rales Soe toy WU oe tape ee a VE ‘Hieas tmtromets_ grees pet 20717, Deca lnserty te 20°C front temparetone at the vate of 2.86 ww /C. ‘TTI, 24790, ond 2N731 to be capable of the {teensy 200% cam temper at the rate af 19 eC, ‘Sartaa ata bunss wa Soecoten’ Seca ee, 4 bea tty TC hoa epanon be feat Son ewe thane Fd 1. bu tne 162°C ale apt a he rate of ASE me T Dete Mao be IHC ce ep at eine of 2 we "indecte SEDEC rpd dete. TEXAS, INSTRUMENTS a2TYPES 2N696, 2NG97, 2N717, 2N718, 2N718A, 2N730, 2N731 N-P-N SILICON TRANSISTORS _——_—_—— electrical characteristics at 25°C free-air temperature (unless otherwise noted) ur [aie TO-e au7a0_| 26731 PARAMETER TEST CONDITIONS TWOS—o| aNere | 2Ne97 on ae ma | A TA Times ia ae Wr sae tate oes] Tae Gal Bae ta Te ine tan aaa Ytmuao tnt tae a Acar |e lin : ~ 1 we a 1s m7 ae | ee vexo to Cot = aa | Tege Calletor Cott Core pe i aie Gi i Sn fre Cer Ye ent ae aap eae oo apap a a Tea ES Wa BPs so Tipe omer = Me gat Impedance o Sst Came Se Mm ft tate ati imma — | tape Adon me oo eee i tte Seal ip ome ie Ihal__ Fee rr Rat mw [es fe fas Se rene x} wf «| »[« oro Sie tape Capac * ej# ATE 12: Ths pumas be mad ng pe Sate pee tae te pad eer iF 98 pn, ahmed th ht a in et tacts SEE gd at ———— 428 TEXAS INSTRUMENTSTYPES 2N717, 2N718, 2N7I8A, 2NS56, 2N1420, 2N1507, 2N1613, 2NT/N N-P-N SILICON TRANSISTORS ‘electrical characteristics ot 25°C free-air temperature (unless otherwise noted) a PARAMETER ‘ania | aniser [aor] UT ‘Ciara Beaks aap ole [5 7 ‘le iar Boao Who Fy ‘te ar Soe Wee ap Oo nie Hon Voge ata] a ws | | x| FE}.|. we 7 test oman a | ae ‘etre tainoce ata | ae Te ipl mae aoe Se Few oa dhe oe Te Sit ants Dal Few oe rr ete abee|salaete [ee Cameten ptt Ser wf sl sl Cemeten Ope ale nets JEDEC rgd et Texas INSTRUMENTS azo indonbon eoTYPES 2N717, 2N718, 2N718A, 2N956, 2N1613, 2NT/11 N-P-N SILICON TRANSISTORS ‘operating characterlstics at 25°C free-alr temperature PARAMETER TEST CONDITIONS Spot Hoke Figure * switching characteristics at 25°C free-air temperature ~ ~— To-1s—-[__an7i8a PARAMETER TEST CONDITIONS ToS—e|—_aNt613__| UNIT Te | MAX m | 0 | mm 1, Toa Siting Time | Se Fiore 1 *PARAMETER MEASUREMENT INFORMATION. inpur eo WAVEFORM: AT POINT A. +20 v~ ‘ourrut WAVEFORM giv 9420 © ourrur FIGURE | — SWITCHING TIME MEASUREMENT CIRCUIT FOR 2N718A AND 2N1613 PU = 15 ome. At ty OTE: 1. Te inet wen pid by «macy rly ol gn wth th fling rc 150 ma, de to $0 me * High Voltage + Low Leakage + Useful hp, Over Wide Current Range mechanical dete Device types 2N719, 2N719A, 2N720, 2N720A, 2N870 and 2N871 are in JEDEC TO-18 packages”. Device types 2N698, 2N699, 2N1889, 2N1890, and 2N1893 are in JEDEC TO-39 packages*. HS ST TO. __THECOLLECTOR IS IN ELECTRICAL CONTACT WITHTHE CASE TO20¢ ‘absolute maximum ratings at 25°C free- temperature (unless otherwise noted) ‘anave | aNeve au7190 awraca [3Na7e fanveva | unr | Gaia Samw Voge Tae] ita _| ae a0] too 1 |v Ctr Emer Vote (See WoT) Cs 10 Cac Emir Voge (Hoe 2) o @_| 0-0 ay | Emitte-Bose Volioge 7 5 5 7 7 7 7 v Coe ant To ose Total Deva Dipton fr Bw) ae ts | oa_| 0s] as [05 [0a or 25°C Freee Tnpertve +] ot . (ee Mo indestd in Ponotemt—e| 3) | | | mm | om | | om Tete Deva Disipeton to bei) 30 | 20 [is | a a] 30-30 25°C Case Te + + + + t . (Soe ndaaied in fortems)——e| | | | om | om | om] | ‘SorogeTemperoture Range eae 45°C 700°C 011: 1 wap he ean ic oe a a mu inranant pont, See Senn 2 i ye svn barter ote ee 7a 2. ber ia m 38% tran nt 63 ma /% 4 Set tnt 29°C cn mgr 7 5. bee tet 0% tea pt tof 8 & Sel tant 15 cn apt a ha tt 3. bron ta TC br map 20 eee ee ore {st ety TSC cn gto to 18 0% on aD wo ep fe eo Son 1 Bo tet BEY ea pt eo 28 me peor andre fo" pe TION, 1, boom tt Cc pan 3 Bea Feat nd BN sh Sermon henna TS {AEC mgmare an “The JEOES rare ution or tae sin TO, "TOL fas rain 70.8 wn te oncapton of na one, TEXAS, INSTRUMENTS anTYPES 2N698, 2NG99, 2N719, 2N719A, 2N720, 2N720A N-P-N SILICON TRANSISTORS jS— electrical characteristics at 25°C free-air temperature (unless otherwise noted) To.18al FCO MELILY PARAMETER must conomons [To-aye! _aneve | anor unr THIN MAK IN MAK [ NAR] MIN WO ‘aaa 1 7 Vimeo a ry ry 0 ‘ac Eni etc40 tidus Yap eee ee * : “ata Ym teas nee ” * “ * . Tree 7 z 7 rouse Weedon Yas z o z 7 oe cI a toes ea me ego li Coa 6 [oe ” a = Yano Ent at Cart a i: E =a tor Tg = ae, Ty = 5 State avd Carn heat tee Cswaien | ee | oc} pe eee eS a * ee Te = 150 ma Sen Rove 1 Fy ey cy 1 a — eee te ae = ee ee oe — ms Taf te Stra oe a 3 sa aT] Tranter sie vw] ae a we] oo So i Tat fall ical (eT = Me Ferwaré Corvst ae na ela ee aces Searle leaia ita er Se Opan-Cirealt s wl oe See GTE 17 Tow purnston a mene wg pl agen, WB Pen slew ma be ‘eeind scour he meat ada JEDEC reps 432 TEXAS, INSTRUMENTSTYPES 2N719, 2N719A, 26720, 2N720A, 2N870, 2N871, 2N1889, 2N1890, 2N1893 -M SILICON TRANSISTORS ee “electrical characteristics at 25°C free-air temperature (unless otherwise noted) Tose] aura —[-anrsea | —aNero [tua vanasurran rast conomons [10-30] anieva —|_aninns | anier0—| uur RR] INNO MMA HIN BE voce | eam uae = meas onelr Vimeo Sire Iga Me, =e temen * a ry , ‘acta Yimica tase Yotae = : e : Tair on 7 7 7 7 nso Sean Ya 7 2 cI = mm Nexo tc Cal rt = a am om 7 a = ao co 10 ee = = cy % Si Fa at ‘eet to = 7 p= wa lake =e a ; aa ig Hen kT 7 Od Ig = ae Sr Bo TT i i ‘acta ig = Baie be ate Yeu Semen Yolo lg = my Set Th z 7 intial te=im tae | a ® =» fo ar -) ine tee lez im. t= 1h we 7. + fo rr = i HT] it Ses a] a Se toe te aa 7 HT] eee te= smn (oI a as ‘eta ea tm t woe o 7 03 [ane es Semper ame lg = ie tate uw Ty v7 13 | ame - a le = len tthe » owls om |e mw | oom Soret ot rato e=imw tate | 6 6 owls = ha us u u fe a w w ule rn “ " " wln 26181 pmo ™ sm ‘ane ihm Bcf hig hing we bt cao 8 chen fae ‘let cary he meme “ttt EE gt te rs FINED US. TEXAS, INSTRUMENTS 43 1eUs Son EES KE MT 10 AE ue A ANY TA out crrioe ox ott DALLAB, TEA 7sE2 1 OHDER TO TMPROVE DESIGN AMD TO SUPLY THE RST ROC POSSETYPES 2N721, 2N722 P-N-P SILICON TRANSISTORS BULLETIN NO. DL'S 7911976, JUNE 1973 FOR MEDIUM-SPEED, MEDIUM-POWER, GENERAL PURPOSE AMPLIFIER APPLICATIONS © f7...60 MHz min (2N722) mechanical data THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE CASE ‘ALL JEDEC TO-18 DIMENSIONS AND NOTES ARE APPLICABLE “absolute maximum ratings at 26°C free-air temperature (unless otherwise noted) Collector-Bese Voltage 2. , ‘i . s+ -6ov Collector-Emitter Voltage (See Note 1) stern -35V Collector-Emitter Voltage (SeeNote2) ee : -60V EmitterBase Voltage. 2 fe ya 6 Continuous Device Disipation at (or below) 26°C Free-Air Temperature (See Note3). 2s se es 04W ‘Continuous Device Dissipation at (or below) 25°C Case Temperature (See Note 4)... te 15 W ‘Storage Temperature Range. See se 65% to 200°C Lead Temperature 1/16 Inch from Case for 10Seconds «2... 1 we beeen es SORE *4RDEC rained dete, This date sheet contain all applicable reprtared date n tfect a the time of publication USES CHIP P20 au TEXAS, ANSTRUD IMENTSTYPES 2N721, 2N722 P-N-P SILICON TRANSISTORS caer anna ‘electrical characteristics at 25°C free-air temperature (unless otherwise noted) suomi | aura PARAMETER ‘esr CONDITIONS a at Tor Vignicag” Coveior Sow Bveakiown Volpe | 1e=~T004A. ig =0 =so_ | 0 v Vipnloeo” Collector Emit Beekdow Vata 700mAIg>0,_SaNows | =a5 | 36 v [Wismcen Collector Emitter Beskown Vale TOOTA Rigg = 10, Se Nows | =50 | 60 v lector Cutott Current Vog=—30V, ig 70 = at ‘cao, ranceacmen Vog=-30V, te = 0, Tan 150°C 100° Teo] “* Tee Entra Coane 1e=0. =100 | = t00] oa Static Forward Current Transfer Ratio ton —8 eo tote | = 3 re State Fnward Curt Trans Rt texte Tonnoes Fea — Vee Sean Vana ig==i60mA, Seno aia[-_salv Wee a) Calas ir Saion VE er Se Now 5 =ts[ as] : al Sel Coron ae i= fete [a6] a8 38) ‘ib Input Impedance Te=—SmA, t= 1 kHe 10 10} Ign -tma, ft kt Be 7 ‘Smali-Signal Common Base Cree 10-4 me me overs Vttape Tranter Ratio ae ox 3 ion-ma, te ae ean: ral Signal Common ae Teams 1 7 fob Oueput Admittance fet kHE s nee . Small Signal Common Tetisie [78 so} 5100 ve Forward Current Transfer Ratio faa kHe 20, 30 ‘ral Sigel Common Emir 120m Brel Forward Current Transfer Ratio 28 uy Comon-Bont Open-Cret Zz 5 Cobo Output Cepacitance fero iors a need Cam cemmon Be OoeGiet Veg--08V, 1en0, f= tMHe 100 0] oF NOTE 6, Toa parameters mus be maeured sing Puta eave ty = 200, dy evel < 1% sebee meer THERMAL INFORMATION FREE-AIR TEMPERATURE CASE TEMPERATURE z DISSIPATION DERATING CURVE ISSIPATION DERATING CURVI % 500 = 16 Z § 8 gu 2 400 a 3 a i N 212 2 x0 20 3 é 3 3 os 3 3 5 200 zo 8 fF E04 2 é 5 302 iol NI _ © 0 25 50 75 100 125 150 175 200 0 2 50 75 100 125 160 175 200 Ta-Free-Air Temperature—"C ‘Tc—Case Temperature—"C loves ricune 2 TEXAS, INSTRUMENTS 435 aus nstTOMENS RESENES THE GAT TO ARE CHANGES A a TM Tone TO TuPROVE EIGN ARO TO SUPPLY THE BEST PRODOT POSSE.TYPES 2N696, 2N697, 2N717, 2N718, ZN718A, 2N730, ‘2N731, 2N956, 2N1420, 2N1507, 2N1613, 2NT/1 N-P-N SILICON TRANSISTORS BULLETIN NO, DLS 699471, MAY 1963-REVISED AUGUST 1968 Highly Reliable, Versatile Devices Designed for ‘Amplifier, Switching and Oscillator Applications from <0.1 ma to >150 ma, de to 30 me + High Voltage + Low Leakage + Useful hy; Over Wide Current Range ‘tmechanleal data Device types 2N717, 2N718, 2N718A, 2N730, 2N731, ond 2N956 are in JEDEC TO-18 packages. Device types 2N696, 2N697, 2N1420, 2N1507, 2N1613, and 2N1711 are in JEDEC TO-5 packoges, at alies= = a | oe yore we cOUECTOR Is mt cma, COMTNCT WH THE GE TOS 3 | Tow 105 ‘absolute maximum ratings at 25°C free-air temperature (unless otherwise noted) INGE | BN7TZ [anion [2N7RO [anose [ANTEZ® frets [ani7iy | UNIT ‘aon Wo A Collector-Emitter Voltage (See Note 1) a o 50 a 0 » 30 a ¥ Caer ae Ro 2 a : Tats ep Shes eo ae ot ia im at Te aes bapa ae ag aes pas as tae ‘25°C Free-Ale Ternperature 7 + tT t ‘(See Wote Indicated in Parentheses)—e-| (3) (5) a cul a @ 10) 10) ‘Toto! Device Dissipation at (or below) 20 Ww 1s WS ry 20 30 30 w 25°C Cav Tapert + | tt + + {Sea Hote Indicated in Porvatheses}—om | (4) (6) (8) (6) ) 4 cy on Tar peter epee 100°C Coxe Temperature: + tt tt - py aes Tages [USE| ste aor aL ee ‘Steroge Temperature Range HSC to 200°C eee a ee sere 1 Ne tie ree = ‘1, Dace nearly 10 175°C trw-ir semporetore ot the rate of 4.0 ew/C®. BROS cod “4, Dovate Hineriy te T7S%C cone temperature at the rate of 12.3 mre/C*. tenes chown te tetee 10 ond 11. Se tee er eae rec clae aee , ope mou Price ts oe cee eerie tot ear ao Se {Se A ae” open mm Ye Ste Stolen oe ceo aes nee seer fate aet eee ten mere ere Site eS Sean ear 436 TEXAS, INSTRUMENTSTYPES 2NG96, 2NG97, 2N717, 2N718, 2N730, 2N731 N-P-N SILICON TRANSISTORS en EEEEEEEe lectrical characteristics at 25°C free-air temperature (unless otherwise noted) a aa aeoala ‘PARAMETER TEST CONDITIONS: TOs—e| 2Neve | 2NOT7 = ne msm aa tm E oe a = aie =e : eee per Vimeo Entree Baden ap Ps ee ego Oct el Comat ~ = afr oe Te ia Gt = = To a tot Gert = shee Fed Gat Se Tait Rate ale ala eo Te ane We apap a fs esa Cola Si oe ifs os ps cd ae pt ingot a Sea Spe nme Soe tow te Teme a atin Goma te — ct Ont Kite ae ‘aS ConEaio Sse Forward Grater Ratio “SeatSiect Comme Elo Dal Fever tate wf fe fs nda EDC gn 6 EE EEEEEEEEEEEEEEEe ara mNeD I US TEXAS, INSTRUMENTS 437 es seas EYES HE NRT TO MAE CUES AT AY oer ormce mo ete » alias, XA 7832 Ione To env Bo SUPT AS CUT POSETYPES 2N849, 2N850 N-P-N SILICON TRANSISTORS BULLETIN NO. DLS 652401, MARCH 1962_REVISED OCTOBER 1968 DESIGNED FOR HIGH-SPEED SWITCHING APPLICATIONS mechanical deta The transistors are in a hermetically seoled welded package meeting the JEDEC TO-50 outline, ue eas msssted . (CASE OUTLINE ee ‘absolute maximum ratings at 25°C free-air temperature (unless otherwise noted) Collector-Base Voltage . 20 Coleco Emier Valiage (soe note 1 Emiter-Base Voltage. . Collector Current eee Total Device Dissipation of 25°C Free-Air Temperature (vee note 2). 1 1) 1). T_T Selector Junction Operating Temperture : Storage Temperature Range . characteristics at 25°C free-air temperature (unless etherwise noted) tolectrical PARAMETER [sr consrron i AX ONT Tex Clits Cotoll art [05 [ae lector Coa Crent [30a tector Gao Cet eT pa tector Cao caret c 10_| pe Enter Coot Gare | we Chuan Breakdown Voge w 7 FVimicex Clade Erie Breakiown Yotoge 7 n Vmcao Calero teak Votoge 5 ¥ Vimjsro rites Base Breakdown Volloge Ts yr ‘og Sti Frwar Core! Toste Ratio Mee te Tag nrg - [erpor-s “Hsin Golo Emir StronYoape Te, le = 10me [sy Pe 0%, k= 10m, 1 100m ‘ « Ge Common-Base Output Capacitance vy e=0, f= Tm 5 a 1 “switching characteristics at 25°C free-air temperature PARAMETER TEST CONDITIONS: = WAX [ONT ' To___Tom-n Tie Tey = 3 m9, gy = Io ‘| wwe tay To Tine Yeo =3¥, R= 2700, (0 Gre &) _ [sae Te = me, Veo = 10¥, fe Get mi B_ | owe iD joven Tee RS 1, by = [tga] = 10a East 35 | ee ‘hw pret mat Be mec wih pletion of 38 cmc end ay le 2 pat ATES. Ts wl appln wa the Sear oe 6 open. 2. uct TSC ee ogni a af Bw 2. Dt is SC ce emp a he a Bw] dice DEC pin TEXAS, INSTRUMENTS ' 438TYPES 2N849, 2N850 N-P-N SILICON TRANSISTORS Vert “ Veen eee ie INPUT AND OUTPUT PULSE WAVEFORMS. ‘cincurT B INPUT AND OUTPUT PULSE WAVEFORMS NOTES: «) All cepethenene In pf. 1B) Al editor 21%, 01 w, HER, ) Decoupling copeciors (250 are pled ecroa the power supply trminclt te Vcg ond Vay. | 2 The lpet to ouch crit vppled by © Modal 30) Lumetion Marcrpaley Polke Geneccior (2qy = $0 1) or equivalent fale te Hina = 1 mie, PW & 400 reve, Duty Cycle = 2%, 10) Output wereterms_ are monitored by « Model 1ZAB Lomaton Sampling Oxlloscope (Zi = $0 0, tn < lamer equivalent, | tats REE te ete yr rent USA 1 Spee ay ae fap me Texas, INSTRUMENTS ens ss KERNS THE OT 0 MAE CUES AT a ont ornoe wo eit» one, ve ret TWPORBER TO IMPROVE DXSICN AO TO SUPPLY TW BEST PROUT POSE.TYPES 2N851, 2N852 N-P-N SILICON TRANSISTORS BULLETIN NO. OL 687400, MARCH 1962-REVISEO SEPTEMBER 1965 DESIGNED FOR HIGH-SPEED SWITCHING APPLICATIONS ome sens _ =e ‘absolute maximum ratings at 25°C free-alr temperature(uniess otherwise noted) Collector-Bowe Voltage. 2 : Collector-Emitter Voltage (see note 1). 1 2 lt : alttee-Oone) Veltope ait mere se : : Collector Curent. bt Total Device Dissipation at 25°C Free-Ale Temperature (see note 2). 2 | Total Device Dissipation at 25°C Case Temperature (see note 3)... ss Collector Junction Operating Temperature». - 2... et Storage Temperature Range. . “electrical characteristics at 25°C free-air temperature (unless otherwise TARARITER TET CONDITION TAR RAO Tea Caer Gora Taz iy, TT pe Teg — lor a Gr My, Ta | pe Teel Co Gor Yee =10¥, pe Ts Ete Go Ga Y= le ee icicle Ent nto age | le = 0 mI Tf 7 Visscher taka | le = 18 pa, = 8 a . Visino Earn tain Ves [= Wee, k=O 5 n We SH Fore Go Tc ate | Yon = 028y, = Ye 2 te etenioeeiciee| oct bone me Te = as —10 ‘tm ‘Soe Fava Cort roo | You = tay, Ie = 100m mae aad ast 18 tee Tender ao |e Ya Dee Tote oa Ce few ene Yooge TL Yar Bein Yohoge Toy Fie taint Ye ao euler Enter eho Toog wa Plena Gece nie Sten Vator ay Selig! mor tnt Inel__Ferwer Carat Tron Btle 2 = Gener tow Orpen | Yes = 84, = che “switching characterlatics at 25°C free-alt_temperature FARRER AKU] 10 [on bot ices 100 ne ho A Tame caNerh th mara fer Tom Tan aur ‘emt 100 me In itt A i i [eae igewatoas a1 me ‘Then prone De moe ih «pl tn NOTES: 1. Tree ts wa he ean de ped ees JEDEE pit dete 28 mice ed «4 ee oT poe 2 et ay eS tale pte a 2. en ay 73% se pat aa ot 8 ——— 480 Texas, INSTRUMENTS aTYPES 2N851, 2N852 N-P-N SILICON TRANSISTORS PARAMETER MEASUREMENT INFORMATION ex enon E —— te [my | [mer [top h=b] oe Te |e 5 eae Bat areal tees eroeed ome |e ey Tar fs a ST oo_[ a0 [ata =ta fo P08 P56 asf is a “Topranc vao "Piet baw-amttorvoliogs, “OF” sate. ecurr B NOTES, 0) All copettnees In ut 1) All radors & 1%, 0.1 w, HPR encopt R260 w at 100 me ‘cepoctors (2840 ere pled scrou the power supply terminals te Vg and Van, ued for 1.8 14 at let thon TO% duty yea fr 100 ma toy fe taep case Fompercivre below 30% 1) The input te s0ch cei supped by @ Medel 203 Lamatron MerurpRalay Pulte Ounereter (Zuy = $9 0) or equivalent Pula rine vines 1 nee: FW 2= 300 nue, Duty Cyle = 2%, ‘1 Outpt wevetorms ore monitored by « Medel 12.8 Lumatron Sampling Oulletepe (2i= $0 0, su ine < tame) equvaent ra PUNTED USA tpn ha yo hr ten pte ger TEXAS INSTRUMENTS INCORPORATED nt ‘TAS MSTHOMENTS RESERVES THE HT YO MAKE ANGE AT AMY TIME roar ormioe nox soit + DALLAR, TEXAR 78202 1 OMDER 10 IMPROVE DESIGN ARO TO SUPPLY THE REST PRODUCT POSSE,TYPES 2N698, 2NG99, 2N719, 2N7I9A, 2N720, 2N720A, 2N870, 2NBT1, 2N1889, 2N1890, 2N1893 N-P-N SILICON TRANSISTORS BULLETIN NO. OL,S 739842, MAY 1969-REVIGED MARCH 1973, Highly Reliable, Versatile Devices Designed for ‘Amplifier, Switching and Oscillator Applications from <0. ma to >150 ma, de to 30 me ‘+ High Voltage + Low Leakage + Useful hg, Over Wide Current Ronge mechanical date Device types 2N719, 2N719A, 2N720, 2N720A, 2N870 ond 2N871 are in JEDEC TO-18 packages’. Device types 2N68, 2N699, 2N1889, 2N18990, and 2N1893 are in JEDEC TO-39 packages*. wove | 20099 | 20788 [anzi9a anra0n] anvevs | unt Collactor-Base Voltage 120 10 170. 120 70 © alec iter Yoga T a n Can-Eir Yop (Hote 2) a ace F Fair Ba Yoo Toes? : ter Cr 18 . tl rao (] aaa es | oss 25°C Fae fey + | . ‘(S00 Mote Indicated in Porentheses|—e- | (3) (5) m ful mo om a (3) TaD spt fr bw 30] eps] a ta] ta] eae 25° Cases + |r| e |e |» ‘(S00 Mote Indicated in Porantheses)—o- | (4) (6) (Ul {10) (10) 0) @ ” orgs Teper Hoge Sew TOC OTE 1. Th ria wo th Bsa stn yg) te a fs th 18 1 Thre opin we he hese es ped Yoo 2. due eye BC ele peta ee 437 me /%. co 4 ete e 30°C ce tampon at Wm 4 bet eS oie pts af the ele 42 9% 4 Deter 015% empath to 113 07°C 2. eel te SSC fle eget a ae of 27 /*. Geen of Auranre, or toma Tec Zee Werte nt Tes 1008) etd tosey to Jes svc at Sermo 7 mre. re ‘Yeas tarumants panes ts type 28718 1 bee nt eS ce amperes th te a WB me, ata Sespiee 4 bate ae 8° ovate emptor of 2.8 SoMirered end howe tor pee OTTO. 10, Hert 200% cv prt a ef 1 Bo {IEDC ror date ‘Ste aEOED rpmured ute for wom dere TOS. "Toe fe wibin TOS whos encaponaf ad eng 442 TEXAS, INSTRUMENTS ”TYPES 2N720, 2N720A, 2N870, 2N871, 2N1889, 2N1890. 2N1893 N-P-N SILICON TRANSISTORS | lectrical_ characteristics at 25°C free-cir temperature (unless otherwise noted) YOxlee| ano —[~anrvoA Tantra —[ Sar vasaorer rast conomons [70:8e] anions —|~ avers | “an90 | un HRW wn HAT RAE A Se * mo ft 5 Vemtcto tanto Yolte ” « « : awe 5 VemCeR vckdown Yolbepe . “ : ‘cn a 7 7 imo Vie ae z : . z = ae oe Tecwo Caller atett Carron safe ca mi aaale “a a ‘woe ot [| aaa a ae x * * io Cat re Trane te ” ape 2a ‘ [bee Emitter Valea a a re — a 7 wie inn aie 1 wee Sie oe z 5 fi aly eat =» [= »[s »[a » [om wpe pe ae oe ry Ve Tae | wee] Se] ee = te Ve 15 is el ; wwe a fet [el pu Renrece ry as as 03 | pe | el = fs m= [sm |= = Me Ferword Corraat Toanste tato satel ae ‘ali pal fate texwmtamm fas fas fas “ a tate e et . " “ wf ir ons eee ter ; fe te x ® 8 5 ole ape Copactonce Nn OTE 1: Th parame mat ame wi pol edge, PS 80 yc, Boe = 2% ee iam st bec Te beg binge at cane change en ‘eid cy he mena TEXAS, INSTRUMENTS a3 Tens mR HESERMES TE WMT TO MAKE NGS A AY Ta root orrce wx sit = Baluas: YOU Yast 1W ORDER TO THPROVEDLIGN AKO TO SUPPLY THE BEST PROUT POSSE,TYPES 2NS10, 2NST1, 2N912, 2N1973, 2N1974, 2N1975 N-P-N SILICON TRANSISTORS BULLETIN NO, DLS 733861, MAY 1963—REVISED MARCH 1973 HIGHLY RELIABLE, VERSATILE DEVICES CHARACTERIZED ESPECIALLY FOR SMALL-SIGNAL APPLICATIONS. ¢ High Voltage # Low Leakage © Useful hFE Over Wide Current Range © Both Common-Emitter and Common-Baso ‘Small-Signal Characterization mechanical data Tanst0, 2N011, 2Ne12 THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE CASE [ALL DIMENSIONS ‘ARE IN INCHES UNLESS OTHERWISE srecirieo a /AULJEDEC TO-1 DIMENSIONS AND NOTES ARE APPLICABLE fara, awiava Tivers THE COLLECTOR ISN ELECTRICAL CONTACT WITH THE CASE ALL DIMENSIONS Unvess OTHERWISE ALL JEDEC TO-90 DIMENSIONS AND NOTES ARE APPLICABLE* absolute maximum ratings at 25°C free-air temperature (unless otherwise noted) 2No10 © -2N1973 2No11 = 2N1974 2No12 21975 Collector-Base Voltage ee eee — 10092 > Collector-Emitter Voltage (See Note) ee ee 805 Collector-Emittar Voltage (See Note2) 5... Dili S==¢0v-—> Emitter-Base Volto Dill vt Continuous Device Dissipation et (or below) 25°C Free-Air Temperature (See Notes 3and4). 2. ee cece O5Wt 8 w* Continuous Device Dissipation at (or below) 25°C Case ane Fiowt ‘Temperature (See NotesSand6) ee 4 3w* Storage Temperature Range. . eee ~88°C to 200°C* Lead Temperature 1/16 Inch from Case for 10 Seconds ss ee — 30°e —> nearly to 200" C case trperetre a "Sarat Ineriy 0 200°C cose temperature atte rtes of 87.1 mw/*C forthe YOwat rating SsEDEC regieered det. This cts sheet co ‘the JEOEC regirured outline tr tee devices it TOS, TOD. (pierantad by Toran Instrumente in eddtion 39 the JEDEC regltered valve which Is lo shown, an 448 Texas, INSTRUMENTSTYPES 2NS10, 2NSTI, 2N912, 2N1973, 2N1974, 2N1975 N-P-N SILICON TRANSISTORS Ties] ae a rataweron a a Tonia isa Bate a af a ; Vimeo eit Den To @ @ a i Yimin Boson Yo = w O : Vinita halen Wi 7a 7a 7 : 5 a ale Ye Cate Cort is i ore toa oa 3 2 as] % 7m 7 We or at Bt 5 ¥ a # we aa Pa ate aa fs eta tae ‘ os oy 09) ole 4 a ule Venun (iit etn oa 1 12] wate tape ome a i moa CO KC CO Te tape Geman tae] aie] ae wt hot tee | see] sa tht nor 3 5 fia Sie atone ia 1 i [ome See Ya=S% te=Sm, tte 100 1000 0 | be Tet nmorae 7 ape Fervesd Comet Woot Nae Ya = 5, * 40 wo] 20 50 amma oa, eaten tote * 15 [ume mone Tt aw | Y= eee |i a @ Sete tty, a ule Gy Commmon-Base Open-Creult pa | Wnty oe atm . 5 «|e npet Copacitonce: os operating cheracterlsles at 25°C free-air temperature eas see ae vans Toss [puters awivre | awrors] uw mae ane 1 ie te a " ° ‘ay Gre SB. Po wih mo et Sang wen dw a nts EDE apie Bt. ——_— << — — TEXAS INSTRUMENTS 445 aus sees RESENES THe HAT TO MAKE CUMS, Aa TM rev orrice wox soit = DALLAS, EKA 7anat 1 O¥DER TO APEOVE DESIGN AnD TO SUPPLY THE HST ODOT POSE.TYPE 2NS917 N-P-N SILICON TRANSISTOR BULLETIN NO. OLS 655549, JUNE 1964~REVISED SEPTEMBER 10 DESIGNED FOR USE IN VHF AND UNF AMPLIFIER AND OSCILLATOR APPLICATIONS + Guaranteed Unneutralized Power Gain—9 db min at 200 Mc + Low Cobo— 1.7 pf max + Low Noise Figure —3 db typ at 60 Me TE active exewents LEENA SLATED FROM THE ast useage 1022 pensions ‘no wares ARE aPrLMLE ey pivehpel (Geeihote ea er ee ee eee ee ee ee 1S ielow) 25°C free-air Temperature (See Note 2) 2 >. + + 200mw Total Device Dissipation at (or below) 25°C Cote Temperature (See Note 3). +.» 300mw Speroing Coleco Incton Temperowre «ov vss es 13008 Storoge Temperature Range see ss Ll lt ls lt lt tt 2 | 468eCt@ 200% Yelectrical characteristics at 25°C free-air temperature (unless otherwise noted) FARAMETER TEST CONDITIONST TIN] ART ORT] Vinycng ler ase Breokdawn Votoge 30 ¥ Tomycxo Clear Enter Breakdown Yologe 5 ¥ Visyoo Enter Boe Breakdown Votioge 3 ¥ 1] 9 levo _Cllador Gaol Gre k olf Gent as Teg Ste Forward Garret Tense Rio [200 Yoe_Boe-Fiter Vtiage ta7_[—v Vena Colleen Staton Voie asf [hay SS! Con Enter fF Forward Coren Troser Baio Conmon- Base Open Gra Seve output Copaions zee Cormon-bse Oper Ct oe uw | ow TE toledo bse Tine Conta 75 | pee NOTES: 1 Th vl gps whet Sse ait bes pci 2. tt ast 20°C tae umpire ath vate a. /C, 2, Bl any 1 20"C ca pets athe te 172 4 Thin pre et Be mie ng pe ale, P= 20 pn, Dry Cle = in Fo Ms otra hed pnd owt at (tog Hr ll means xp Pear ete EEC ged date Uses cHIP N22 —_——— 4.48 Texas, INSTRUMENTS“TYPE 2NS17 N-P-N SILICON TRANSISTOR ‘operating choracteristics at 25°C free-air temperature The ot te} tig tt seman sp Pa EF i erm he fete pnd * PARAMETER MEASUREMENT INFORMATION CIRCUIT COMPONENT INFORMATION. Cl, C2, ond C9: 0.05 yf 2, 1.5 = 109 = Ch ond C5: 1600 pf toson Chong C7: 3 15 ph DETECTOR erg mh 22k Uh WAZ AWG, 2m 1D (Zend 13, 200Me RFC a Las 1/22 AWG, Dem ID 1 ond 02: NOMS for equivalent) [OURE 1 — UNNEUTRALIZED 200-Ke INSERTION POWER GAIN TEST CIRCUIT (Cl and C2: 1000 pt ond 13: $00Me REC L271 GAWG, 378° OD, 11/4" length Double Stub Tuner cont of the following bing (or equivalent 2 GR Type 076 TEE 1 GR Type 874-020 Adjuetble Stub UGR Type B74LA Adjatoble Line w os GR Type B7LWND Shorea Tentntion FOURE 2~ S00.e OSCALATOR POWER OUTPUT TEST CIRCUIT dat 8 ge a 978 Tce tes oy my I oy Gi tome et yt opt! gee TEXAS, INSTRUMENTS ‘aus seoMcs RSEVES THE MCAT YO MARE CUWCES AT ANY TM oer ormce wox nein » Datuam, TXAM raaza 1 OHDER TO APEDYE DESIGN AKOTO SUPPLY THE AST PROUT POSSETYPE 2N918 N-P-N SILICON TRANSISTOR BULLETIN NO. DL8 7311008, MARCH 1873, FOR VHF AND UHF AMPLIFIER AND OSCILLATOR APPLICATIONS © Low Noise Figure . . . 6 dB max at 60 MHz © High Neutralized Power Gain... 15 dB min at 200 MHz © High Oscillator Power Output . . . 30 mW min at 600 MHz “mechanical data ‘THE ACTIVE ELEMENTS ARE ELECTRICALLY INSULATED FROM THE CASE a absolute maximum ratings at 26°C free-air temperature (unless otherwise noted) Colctor Base Voltage rin vanes vtec e ees 2OV Colectoremiter Valage(SeeWow Le eee 15V Emit Bem Voluge ee ee DELETED it iioay Continuous Clete Curent S| | eee ee 50mA Continuous Device Dissipation at (or below) 25: °C Free-Air Temperature (Soe Note 2) we ee ee 200MW Continuous Device Dissipation at (or below) 26°C Case ee ture Jl Note a See ee ee 300 mW Storage Temperature Range... se sees 65°C to 200°C Lead Temperature 1/16 Inch from Case for 60 Seconds eee oe . 300°C “electrical characteristics at 25°C free-air temperature (unless otherwise noted) PARAMETER TEST CONDITIONS? mite _wax [ont] Wanicag_ Sales am Sreigown Voto igre 20 v ighigeg_Calsarenitar weakaown VoTues [1c FSA ga, Sevow eT 7 WiSRIEBD Entre Brown Vora ig 10m Igo a 7 Venn Tove wpe 190 Calor att Caran Yann et of ge ae Farr aro For nto Wee = 1. lg * 3m z sees CALI TL [Wetiaal — cotstaremr seuraion Vals ——[ p= TmA le =TOmA Ks Ire] Smelt Sane! Common Siri Voe=10V, tgn4ma, t=t0omHz | 6 9 Forward Current Transfer Ratio ce hal Gomes Opie Vea 10V. gO. tear ae ote Output Capecttance Ves=0,_le=0, F= 140 ee Ene ae Veo=08V,ig0, t= 140K a | oF Etat Tie Coe SC % NOTES: 4. This valu polis wien the bess-emitte diode w open-lculted. frevirtamperature at tha ree of 114 mW/*C, ‘sJEDEC registered det, Ths date aneet contalne ll applicable reghtered data In eect atthe time of publlstion. ‘the fourth led (css) a flouting forall meuramanta except power gain. For tha masurement, the fourth led la grounded. ‘USES CHIP N22 EE EEE EEE meal 279 us TEXAS, INSTRUMENTSTYPE 2N918 N-P-N SILICON TRANSISTOR ‘operating characteristics at 26°C free-air tamperature ARATE F teetNan Fa aad Gag id Bata no ors ‘Pe __Ernittar insertion Power Gain See Figure 1 Fo Onciiator Power Output Vep= 8V, 7 Colieetor Ecieney See Figure 2 “PARAMETER MEASUREMENT INFORMATION. cncumt seneMariC MIVTRALIZATION ADJUSTMENT PROCEDURE ‘Attar tuning amplifier x for nermel gain meaivromen, reveie Input ond eurput connections and tune 12 fer minimum indication ‘on detector. Ths sequence Ia repeated until optimum vatings ere ‘obtained for ell voles, ‘CIRCUIT COMPONENT INFORMATION ch a-1a6 ce: 0.08 ue Sava cr: 1000 9F fr: oon oi 776" eoaeh 144309 (or mqubatond. La: BT 16 AWG 1/8" 10, 7/8" tenth, ‘Turna Revo 8 101 La: 200 HE RFE FIQURE 1-NEUTRALIZED 200-MHr INSERTION POWER GAIN, ccncurr scnemanic ‘CMCUIT COMPONENT INFORMATION LEAD 4 (CASE) Escape eee FLOATING courrur ahd L4: 0.2 ut, Onmite 2460 (or auivatent) come La 2 #16 AWG, 376" 00, 1-1/4" eng stus DoubieStub Tuner consists ofthe flloning ee omnes FIGURE 2-500.¢MHz OSCILLATOR POWER OUTPUT "The fourth lad (ea a flosting forall measuramants except power gain, For this massuremant, the fourth lad Ie grounded. ——— 573, PRINIED IN USA i aeceea aar wel ner soa toca eee Texas, INSTRUMENTS 0 {EUS MORONS HEISE NRT YO MAKE UNG A AT oer ormoe x eit» ona, rae ree 1 ONDE To IMPROVE DEIN AND To SUPLY THE REST oOo PossTYPE D2T918 DUAL N-P-N SILICON TRANSISTOR BULLETIN NO. OL:S 7911877, MARCH 1973 ‘TWO TRANSISTORS IN ONE PACKAGE FOR VHF AND UHF AMPLIFIER AND OSCILLATOR APPLICATIONS © Low Noise Figure... 6 dB max at 60 MHz ‘© High Neutralized Power Gain . . . 15 dB min at 200 MHz ‘© High Oscillator Power Output . . . 30 mW min at 600 MHz ALL LEADS INSULATED FROM CASE coutecront Bitfren 1 EMITTER ALL DIMENSIONS ARE IN INCHES Base. ONCESS Stnenmise sreciries eottecton2 absolute maximum ratings at 26°C free-air temperature (unless otherwise noted) Collector-Base Voltage. ee eee Collector-Emitter Voltage (See Note 1) se eee ee 1B Emitter-Bae Volto oe tee eee Dillosv Continuous Collector Current 2 Lilt soma Continuous Device Dissipation at (or below) 26°C Free-Air Temperature (See Note 2): Each Triode . . . . 200mW Total Device | |_|. 300mW Storage Temperature Range. eee 65°G to 200°C Lead Temperature 1/16 Inch from Case for 10Seconds ss Begddesuaede 300°C electrical characteristics at 25°C free-air temperature (unless otherwise noted) PARAMETER "TEST CONDITIONS [min TvP_wax [ONT Vipnies0_Cotlector Sa» Breakdown Vales Tete, te=0 30 Vv VipR}GE0 Collector miter Breakdown Volto Ig= Sma. Seton STF v Vi@h}E60_Emitar ae Bresiown Vottoe Te= 105A 1¢=0 3 v ctor Vea 18V-1e=0) eo L $e00_ Calector Cutott Current Vop=15V.e=0, Tas OE TL ieeg Sete Forward Gare Troster Ratlo | Vee =1V, Io= 3A 25 Vac Bese Emiter Vole Tg" TMA, ig= 10mA Tv Vc ga) Collector Emit Saturation Valome ig TA, Ig= TOMA, oa fv Smal Signal Common-Emiter Ihre) Sma lone! Comman-Emite | Vee" 10V, Ign4ma, f= 100MM: | 6 8 ‘Common-Sae Open Circuit Vou=10V, 1e=0, fot Mne a Soto Output Capactanon Vee=0,le=0, f= 1 Witz 7 ‘Gommon-Beee Open CiruTt V,ig=0, fet MHe E ae VeB=OSV.Io=0, fo 1 MH 2| oF Tee Clectr-Bane Tine Constant Veg=10V, 1g =a mA, (= 705 MA 3 = NOTES: 1. This valve apoios whan the baseamiter doce is open-circuit. 2. pent nary to 176°¢ towel wmperotre st theres of 1.38 mW" for ach ‘lode and 2 mC forthe tte deve. 3. This peremetar must be massed Using puloe ewchniaues ty 300, duty evel < 2%, ses cHiP N22 ed 450 Texas, INSTRUMENTSTYPE O2T918 DUAL N-P-N SILICON TRANSISTOR operating characteristics at 25°C free-air temperature PARAMETER Tesi conorrions Vee=8,Ierima, Rg=aaoa, F Speen Fe vesev. 6 Veo 12V, ig=8ma, = 2000 Spe ‘See Figure 1 g___etia Povr t Vos 18¥, 1e= 8m = BOONE Gao Er Seatioue 2 PARAMETER MEASUREMENT INFORMATION. ceeurr ScHeMATIC [NEUTRALIZATION ADJUSTMENT PROCEDURE After tuning emplfiar 02 for norm! gein meatsremat inp) end output connections and tune 12 for minimum indication fom detector. This sequence ik repeated until optimum satings ore blaine forall voriables CCMCUTT COMPONENT INFORMATION cu 2-129 ce: 0.05 uF C2and C7! 10008F i: 100 10500 Sa 1-790 main bETECTOR Ga and oo 001 ue USK T #16 AWG, 5/16" 1D, 7/16" tnt urna Ratio ~ 2 101 0.40.86 nit, Miler #4905 (or aqubalent). 8 T #16 AWG 1/8" ID, 7/8” length, ‘Turns Ratio = 8104 200 Mir REC. FIGURE 1-NEUTRALIZED 200 MHz INSERTION POWER GAIN ccmcurr scmsmanic ‘CIRCUIT COMPONENT INFORMATION (ot ana c3: 1000 9F e: ourrur at 1, La, and Ls 0.2 ut, Ohmite 2460 (or aquivaiet) pouste Lz 27 #16 AWG, 978" 00, 1-1/4" length stup Double Stub Tuner consis ofthe fllontng Tuner plumbing (or aqulvetant 2GR Tyeeg74 Tee 374-020 Adjustable Sub s74-LA Adjustable Line '874_WN3 Shorecireur FIQURE 2-500-MHe OSCILLATOR POWER OUTPUT es ra manr> wUSA tar pe pt Texas, INSTRUMENTS 4st ous SHON ESS THE GT To MAE ANGE AT ANY Te oer comex wor wit» cone, TEX ra IW ORDER TO mPEOVE EIGN AKO TO SuPRY THE AST PROUT POSSETYPES 2N929, 2N930 N-P-N SILICON TRANSISTORS BULLETIN NO. DLS 653559, MAY 1969-REVISED SEPTEMBER 1968 FOR LOW-LEVEL, LOW-NOISE, HIGH-GAIN, AMPLIFIER APPLICATIONS © Guorantoed hye at 10 pa, T, —=— 55°C ond 25°C © Guorunteed Low-Noise Characteristics at 10 pa © Usable ot Collector Currents as Low as 1 pa ‘*mechanieal date we ouecto os w ELECT Conracy wow te ase ‘absolute maximum ratings at 25°C free-air temperature (unless otherwise noted) Collector-Bose Volioge. - 2. + 5 . My Collector-Emitter Voltage (See Note 1) : My EmitierBase Volioge 2. ee Sy COME pao FOboc docu oo Oboe od cod 30 ma Total Device Dissipation at (or below) 25°C Free-Air Temperature (See Note 2). . . . 300 mw Totel Device Dissipation at (or below) 25°C Case Temperature (See Note 3)... . 600 mw Operating Collector Junction Temperature. 5 2 ee 17sec Storage Temperature Range. = 65°C to + 200°C TES: 1. Th alee epi wh the basi de spn eed. 4 bute Inset SSC teats eprint te ee 2 eC, 2. ete ety SC cee mp tthe of 42 aC, “Ines HEC oie tr on 452 TEXAS, INSTRUMENTSTYPES 2N929, 2N930 N-P-N SILICON TRANSISTORS electrical characteristics at 25°C free-air temperature (unless otherwise noted) PARAMETER TEST CONDMONS ae ato | un] | Yemuceo Collector-Emitter Breckdown Voltage | Ic = 10 ma, ly = 0, (See Nowe 4) | 45 4s v 3 f 7 73 wpe 10 wpe 7 wm a 7 w | @ | m fw le] | 7° ” Ie ‘Static Ferword Current Transfer Ratio e TY 30 wl | Ya taokaia Vow ww |e pls ease Ent Sota Walp ie whe ha Steel Comment * _tpet impedence ted Cede 7a | eae ies Tao tate i ie ‘Smncll-Signol Common-Bese ee Output Nation Vea =5¥, o | 1 | 0 | 10 |pmhe| Soa Spal meni be Forword Current Transfer Ratio Vor = 5, © | 30 | 10 | oO lo i Stoners | teas, A u & Commen-base Open-Grestt Output Capacttonce Yoo = 5%, ' sie soperating choracerstis at 25°C freee temperatore ranameaa THT commons aura T2098 Tar Saints hawa 7 7 Ta HF _brompe tote Fg Moka Namdvidth 10 cps to 157 be Texas, INSTRUMENTS exs STOMA ES HET TO AE UGE AT AY TE cost orn oon sas Dauian, Tes 7088 1 OE To PROVE OSION MOTO SOY TA EST PROUT POSSEN-P-N SILI BULLETIN NO, DLS 692471, MAY 1963-REVISED AUGUST 1968 Highly Reliable, Versatile Devices Designed for ‘Amplifier, Switching and Oscillator Applications from <0.1 ma to >150 may de to 30 me + High Voltage + Low Leakage + Useful hyp Over Wide Current Range *mechanical data TYPES' 2NG96, 2N697, 2N717, ZN718, 2N718A, 2N730, 2N731, 2N956, 2N1420, 2N1507. 2N1613, Z2NTI1 ICON TRANSISTORS Device types 2N717, 2N718, 2N7IBA, 2N730, 2N731, and 2N956 are in JEDEC TO-18 packages. Device types 2N6%6, 2N697, 2N1420, 21507, 2N1613, and 2N1711 are in JEDEC TO-S packages. ro.8 THE COLLECTOR 1S IN ELECTRICAL CONTACT WITH THE CASE Tow TOs ‘absolute maximum ratings at 25°C free-air temperature (unless otherwise noted) BAGS | BATT, [anrien EW? [anoso ENTAZEFnera|aniziy [UNIT ‘lea Yoon @|e [6s |e >s|o@ lefts [. Glecorinite Yolone Geo | fo | 9 | @ | 0 | w | | fv Coleco Enter Voope (oe Hof 2) 2 n ia es Yooge sos ps es a Gtr Gat io 19 1 [-« Total Deve Despaton aw tebw) | 08] G4] OS | 0s [os | 0s | os | os | w 25°C Free Torpercare + | tt + + foe Hae Indicted i Foentise)—or|_ |) | om | m 1m | @ | on | oo Toll Dave Dipton ater bolw) | 20” | 15] 18 ] 1s] 1 | 20 [a0 [30 |= 25°C Cosa Temperature + | oH tt + fee Wot Indeed i Fernie |) |__| wm | | | wo | an | oy Tol Bars Dispaton ot to] es |e Pas fie ie fw 100°C Cse Tempero + | tt H# + puting Goadue ncn Tnparcors | WSF StF | moo [Ustt | moo | ws | oo {ame | * SoageTenpertve Bangs ASE fo 10% OTE: 1. The wae apie sh the emir ins lg) ape oo thar atm 2. Thc yaa op wha th Sesatr da epost 4 be Hoey Ye TS fest mp atte rote of 8 me. 1 be wef SEC can apo ate fe of Ee. 5 Dune Unset 5% toate fon atte tte of 247 eC. {eter SC can tpt he tea 10/2 2. bute Hse DIME ter Imponton the tte af 246 we. 1 bute tea Be 2086 coe Naps at the te of 8 e/ 1. te meaty SC tocalt tape he tte af 3.3 me /C%- 10. bat nye RC fro topes at fe ae 86 me 1. Beate tnely Ye °C com ompre at thew 172 w/C ‘Inc JRE itn dt. ‘Treas, tasromente guarantees tt types 20606, ‘purr, 20020, fond BWis07 te be copele at te ‘= rgiared ond shown for 7pe8 SATG12 and 2NI7IL wih epproite erating fecire stew in Motes TO ond’ TT TEXAS, INSTRUMENTS ona. 2N1420, 2N1507, 2N1613, 2NTIM N-P-N SILICON TRANSISTORS TYPES 2N718A, 2N95\ *electrical characteristics at 25°C free-alt temperature (unless otherwise noted) rote] anriea 86 PaRaMTTER rast conomons [“yo-s=of amieis | amieao | anisor [amin] ONT TRINA NMA BE A Teaicao (oleae Beaten Vow Be _je__[s | Fiscao, cater Beate Yoho 8 * Tier far Bohne Yee fama) wee o 7 mao.‘ bade Yate 7 ? + a [a a ie * a eso) oe coe oe o aa | 7 wm Teer el ot 7m Taso Ene Cot Got or Toe_| on |e = E) oy Static Fran at = ul] Strate etl » * aa | we [if = « Ten tort Yoew wpa a as Vearan leona San Wipe psf is | is | Tol Sip! Comme te H_# eo nat an wt oop Te rn Seats! Came ee we we Me ew atop Tot Bat 7 ir we wee ed ame ae as | ae bon mite arte ae ae ‘aS Comm nor ae od See Foon Cort Tn ate s_ ee a 22 ie 12 ‘ume Op Ch = aloe See opt Comte : ae " ‘uma to Op Cr el crceaea e=es zim ” wl ow ‘Son ewitehing charactriatics for typat 2N71BA and 2N161S on pages 430 or 4-72, “operating characteristics at 25°C free-air temperature PaRaneTEe ‘ast conoimons ser Sgt ere sfefefule STE 17 The proms mao mend wing pul gon PH 200 pn, Bay Gul Ph, Fale wh mas wh et ‘Seen poate an te ou trey mone tots JME itd dete nt ng dao co — ma PRIN IN USA. TEXAS, INSTRUMENTS 455 ent SOUT EERE EAGT 0 MARE UNS A A oer orc wox wns « DALLAS TEXAS 724 1 nDER TO IPHONE SCH AND TO SUP TE ARS ROQUC POSSETYPE 2N997 N-P-N DARLINGTON-CONNECTED SILICON TRANSISTOR BULLETIN NO. DL'6 7211677, MARCH 1972—REVISED MARCH 1073, TWO TRIODES INTERNALLY CONNECTED IN DARLINGTON CONFIGURATION © Very High Gain . .. 1000 min at 100 uA © Low Leakage... 10 nA max at 60 V ¢ Rugged Internal Connections “mechanical date amore ‘THE COLLECTOR I$ IN ELEC- w+ TRICAL CONTACT WITH THE [etl case ar (KS: ALL JEDECT0-18 OIMENSIONS ey Ee {AND NOTES ARE APPLICABLE i Es hue Cho “absolute maximum ratings at 25°C free-air temperature (unless otherwise noted) Collector-Base Voltage. eo oO oe +. 7V Collector Emittar Voltage (See Note 1) Se danbdco00n + 40v Emitter-Base Voltage... cee oe 5 eee nN Continuous Collector Current so Le 300mA Continuous Device Disipation at (or below) 25°C Free-Air Temperature (See Note 2) te. O5W Continuous Device Dissipation at (or below) 25°C Case Temperature (See Note 3)... a 15W Storage Temperature Range... ss : bu od + 85°C to 200°C Lod Temperature 1/16 Inch from Case for 1OSeconds ee es + + 300°C ‘electrical characteristics at 25°C free-air temperature (unless otherwise noted) PARAMETER a "TEST CONDITIONS: n_MAX [ONT ‘VianjGu0_Cotecior Boe Breekdown Varies Ten T00HA, te =O 75 v ViBRICEO Callecior rite Brevkdown Volpe 1g= 300A, 1g 0, SeeNowa | 2 v ViBR)e80 Emitter-Bese Breakdown Voltage: Te= 10H, Ic=0 7 T Veg V, ie =0 Tol na B ctor rent 80 ican eae Ves = 60V, Ta= 150°C TO] HA Tea0 Eni Cet Curent Vep=5V, TOL na. Vee = TOV, 000 Vee = 10. 2060 hee State Forward Currant Tranter Ratio Voe= 10, Bes Nowe a | 700 FORO] Vee =10V, l= 109mA, Ta = ~55°C, See Nota 4 000 Vee Bow Eriner Vora Vor =10V, les 100m, SeeNows | 09 V8] v Vee tat) Colector Smit Seivation VoVioge Tg TmA, 1g = 1007mA, See Nowe TeV Tans Conran Bee Oper-Cirek Output Copacomes | Veg =10V, eso, 11 Wir 3 PF NOTES: 1, Thievaie alin when te entre alos open-creuitd Fe teeie tempersa 2. Shows purematare must be mestured using pul Yechriguen. y= 3008 uty evela 2% Je DEC rapstared dts. Thin dat seat contin al apliabe raitred ts etect the time of publication. Uses cH 23 — mo 1 Us 456 TEXAS, INSTRUMENTS our cones wax ens» Baas, Txae reat Us TOME ESE HE MGT To MAE ONCE AT TE (ORDER TO WOE DESIGN AND TO SUPT THE AEST ODOT ORSMETYPE 2N991 N-P-N DARLINGTON-CONNECTED SILICON TRANSISTOR BULLETIN NO. DL. 7911699, JUNE 1972 ‘TWO TRIODES INTERNALLY CONNECTED IN DARLINGTON CONFIGURATION (© Very High hee .. . 1600 min at 10 mA. © Low Icgo . . 10 nA max at 90 V © Rugged Internal Connections “mechanical data ‘THE COLLECTOR {8 IN ELECTRICAL CONTACT WITH THE CASE ‘ALL JEDEC TO-72 DIMENSIONS AND NOTES ARE APPLICABLE “absolute maximum ratings at 26°C free-air temperature (unless otherwise noted) Ccollector-Base Voltage : tov Collector-Emittr Voltage (SeeNote 1). 2. 6Ov EmittorBene Voltage 1Bv Continuous Collector Current: 500 ma Continuous Device Dissipation st (or below) 25°C Free-Air Temperature (See Note 2). - O5W Continuous Device Dissipation at (or below) 25°C Case Temperature (See Note 3) 2. 18 Storage Temperature Range... + 85°C to 200°C {Lead Temperature 1/16 Inch from Case for 10Seconds | | | 300°6 NOTES: 1. This lus appli wna the anitaroae loge are opa-iete 2, Dera tiaariy 0 200°C transi aparece ote eof 286 mC. 2 Dart loery to 200°C cae tempereture at he ate oF 103 mW/-C~ +2206 regard dec. Tht ta dee conaie al eplcabie reirared ota in facta the tine ot Uses TWO N23 CHIPS TEXAS INSTRUMENTS 457TYPE 2N998 N-P-N DARLINGTON-CONNECTED SILICON TRANSISTOR nn EEE electrical characteristics at 25°C free-air temperature (unless otherwise noted) PARAMETER Test conomions? tain _wak [one Vignicag Galecior Be Braskdown Vatogs Tea t0OnA, te=0 10 Vign)¢E0_Caector iter Breakdown Volage Ig=90mA,ig=0, Seow a | 00 Vignhene-Enitarae Brataown Vohone igs 1007 Tg= 0 Vog=00V,—le=0 1 Calc Cutotf Curent c20 Cutt Cu oS 150 Er Be te=o = Veg, —le= 1A a vee referer TmeRete TYEE TeY lectin etree BD Vee =8V,1e= 100 mA Ses Now 4 [2000 Sais Foard CROTON RTS . ote ve me rome Ion t0ma, Seenows | 28 Vag tno rir Voge lg= Bk, Sena Tapv Te an) Caloctor Ear Sa VOTE igs BOM See Rowe Sra Spal CONE 1 ote Me Forward Curent Tranefar Re Clonal Mead Conmon-Bee Open-irelt eno, tte 20 Seve output Cpscance e or more Ope Sis a jy ign0, t= 1 Me 0| oF Input Copacancn “operating characteristics at 25°C free-air temperature PARAMETER. ‘TEST CONDITIONS IN _ WAX [UNIT Vee =10V, 1g=O.1mA, Fg= Ska. t= tkHR, F ‘Spot Noise Figure e| oe = 20082 NOTE 4: Thane parametere mutt be messured using pute techniques. tw = 300 Hs, duty evele < 1% Tall macsurements exceot hee (et ode) and F ara mace with the arittart,base2 terminal lnc 8) open. THERMAL INFORMATION tan Cin De tn t Bee 8 8 Meme Cont Ori pte Tafa ampere Fone Yona "6 FIQURE 1 FIaune 2 ‘n Texas INSTRUMENTS oer orrice nox sols + BALLAn, THHAR Tent Tenis TROMENTS RESERVES THE IW ORDER TO TKPROVE DESIGN AND TOTYPE 2N999 N-P-N DARLINGTON-CONNECTED SILICON TRANSISTOR ‘TWO TRIODES INTERNALLY CONNECTED IN DARLINGTON CONFIGURATION © Very High hrE . ..4000 min at 10 mA, © Low IcBO... 10 nA max at 60 V ¢ Rugged Internal Connections ‘mechanical data ‘THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE CASE ALL JEDEC TO-72 DIMENSIONS AND NOTES ARE APPLICABLE “absolute maximum ratings at 25°C free-air temperature (unless otherwise noted) (Collector Hass Votrage ee se ee eee ee ov Collector-Emitter Voltage (See Note 1) eee ov EmitterBase Voltage. ee 16V Continuous Collector Curent 2 ee ‘500 ma Continuous Device Dissipation at (or below) 25°C Free Air Temperature (See Note2) ww Os W Continuous Device Dissipation at (or below) 25°C Case Temperature (See Note3) . . 2... ss. . 18 ‘Storage Temperature Range. se ee * 165°C to 200°C Lead Temperature 1/16 lnch from Case for 10Seconds ee 300°C nearly "0 200°C trees temperature st th rte of 2.96 mW/C. iearty to 200" enee temperature atthe rate of 10.3 mW/C. ‘UBDEC regieered eta, The date sheet contain all applicable ropietrad data i afact atthe time of publiation. Uses Two N23 CHIPS. Texas, INSTRUMENTS 459TYPE 2N999 N-P-N DARLINGTON-CONNECTED SILICON TRANSISTOR “electrical characteristics at 25°C free-air temperature (unless otherwise noted) TaRaTER TET EOROTONET noo Ti Gace down Var igaiboam, Tes 8 7 ‘ViBR}CEO Collector Emitter Breekdown Voltage 1g=20mA, Ig 0, SeaNow a 60. v VigR)/EB0 Emitter-Base Breakdown Voltage te=100uA, I= 0 18 v. —————— gua ie=0 ole ‘C80 ‘or ire 1e=0, Tas 150°C 10] oA, Tagg Ear aa Cat ize wpa igs oram 7a _ ig 1Omn~ Geetows [ate ten Sate Fonemt cone ig 10d, Soe Nowed | e00 TOR ro ‘en Ic = 100mA, Ta = 85°C, c vs TAS -88C, | 5909 Ta For Cra Tae Rao ore {Each Triode) c Sew Vag ta ier Vaio ig iOma, Showa wal Wee ance aS Va (gs WORA Sete sv Comets oer Cato commen ee Oo feo. t= wow | Coane aT Cee tea teow 10] oF Input Capacitance c scoot hcg (each triode) are made with the emiter-t, bab:2 terminal (esd 4) open NOTE 4: Theve perameters must be manaured using pulee techniques iy = 300s, duty cycle <1. Py-Maximum Continuous Device Dissipation—mW ‘THERMAL INFORMATION FREE-AIR TEMPERATURE DISSIPATION DERATING CURVE ‘CASE TEMPERATURE DISSIPATION DERATING CURVE 2 18 18 14 12 K 1 os os oa 02 25 50 75 100 125 150 175 200 ‘TA-Free-Ait Temperature FIGURE 1 Texas, INSTRUMENTS Py—Maximum Continuous Device Dissipation-W ° 0 25 60 75 ‘To-Caso Temperature—°C FIGURE 2 Pano IN USA 100 125 150 175 200 TEXAS _WSTROMENS RESERVES THE BERT TO MARE GUANGS AT ARY TE |W-ORDER 10 IMPROVE DE‘ AND T SURLY TE EST ODUCT PSSTYPES 2N1131, 2N1I32 P-N-P SILICON TRANSISTORS BULLETIN NO, DLS 731778, JUNE 1964—REVISED MARCH 1973 GENERAL PURPOSE MEDIUM-POWER TRANSISTORS © 2 Watts at 25°C Case Temperature © Complements to 2N696 and 2N697 © 10-ohm Saturation Resistance (max) mechanical dota "THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE CASE ALL JEDEC T0.09 DIMENSIONS AND NOTES ARE APPLICABLE @bsolute maximum ratings at 25°C ambient temperature (unless otherwise noted) Collector-Base Voltoge. ee ee 50 ColederEmier Velge Gee nee) SL lle iil 2-35 Emiter-Base Voltage... ee ot : Collector Current... a fod Total Device Dissipation at 25°C case temperature (See note 2). ss es fs 1 20W Total Device Dissipation at 100°C case temperature (See note 2). 2. ee ee Ow eT ———————— + O.bw Operating Junction Temperature... 2 ee ee : De TSC Storage Temperature Range... 65°C to 200°C NOTES: 1. This value applon when the base-emitter diode open-circulte. | Dares lineary to 176°C casa emparature atthe rete of 13.3 mW/C. | arte lineary to 476°C ambient tamperature at the rate of 4 mW/ C Uses cH p20 —_— — TEXAS, INSTRUMENTS 461TYPES 2N1131, 2N1132 P-N-P SILICON TRANSISTORS ‘electrical characteristics at 25°C ambient temperature (unless otherwise noted) Perera Test Condens 1 eso | Calctor Rovers Coroet | Vey = —30v, ke = 0 eso | Gallector Rovers Corent | Vey he =v ie = 0 ise exo | Enitor Rovers Corent Bile Ymero| Galeor Ba Baka Yotoge —Iotya ie =O Yotloge “Yimicso| GoleorEmite Breakdown | Ic = —100ma,ly= 0 Yetoge te “Vomicee | Gllecer-Eniter Breakdown | Jc — —100mo, 10 obs hee | DC Forward Corent Ver = —10 Tronsor Rata le = 150m ‘ans anise Transfer Reto “hee | 0C Forword rant Yer = —10v le Smo Dest anise 1s 3B Bose Eitor Vlogs ty = —15 ale = —150 me Valoge Collector miter Sotration | y= —15mo,t¢ = —150 me | AC Common Eniter Foreeré Curent Traater Ratio nat ania Ge) Common Boe np (portance Co | Common Bere Outpet opeitance be | AC Common Emitter Forward Curent Tamer Ratio nist ama 5 % | AC Common miter Forward Corent Tansee Ratio 231 ania Impedonce rs 0 af ‘dette phe VottogeTronter Ratio | f°" = ke the | A Common Bow Revers | Vox = —S¥jh4 = Tmo ‘axi0 ‘These measorements must be made with o pulse duration <300 micseconds end o dty cle <2 parce i TEXAS, INSTRUMENTS IAS GTROMENTS RESERVES THE MKT To. AEE NGS A wT IME 1 DFO TO IMPROVE DESIGN AND TD SUPLY TRE BST RODE FOSSIL,TYPES 2N149 THRU 2NTI53 N-P-N GROWN-JUNCTION TRANSISTORS BULLETIN NO. DLS €02237, DECEMBER 1961 -REVISED APRIL 1960 mechonical date ‘The transistor is in on oval welded package with glassto-metal hermetic seal between case and leads. Unit weight fs approximately 1 gram. ALL LEADS ARE INSULATED FROM THE CASE aor +828 ow au 10 -——_ 2100 = 000 lata ante een es 0010 ‘absolute maximum ratings at 25°C free-air temperature (unless otherwise noted) Collecor-Bose Voltage... ee ee fatal Device Dialpotion (See Nowe i) 2 2 LLL DDD tom Total Devies Dinpation af 100°C Free-AirTomperature © 2 St ll lll lm Total Device Diuipation at 150°C Froe-Ale Temperature» 2s |. sy clan Collector Junction Operating Temperature vse ss se HITEC Storage Temperature Range = PED D DDE DD DDD LD tabedee #175 8181 ft tn bce ptt i Co ns HOR pte TEXAS, INSTRUMENTSTYPES 2NTH49 THRU 2NT1153 N-P-N GROWN-JUNCTION SILICON TRANSISTORS electrical characteristics at 25°C free-air temperature (unless otherwise noted) a ee % a ue : oH to» tort ome : rk : 3 Fox eager Ea rat] a} a 7 = = tag ne see aa —— oe teetee —gee ast} 7 fae Common-ase Alpha Yea = pine " — 1S? uw ate ms |u| ae | ae eA Cen Ferd gua | osu | “as | Sas rent Troneter Rate mnisz | 09735 | 0.98 Seth Bs | 3] SF | 38 is i aan a = — ee a} a} Som =| ae ae he Sea ans 0] 400x104 | 1000x104 Veitoge Tronsor NTS? 0! 400% 10% | 1000x104 N83 0} 400x104 | 10002 10+ aoe toca ce TH he pa Se ae ere Spe Comnon-Emitier mist w o eae Ca 2152 a ime a [|e NIE IN USA aes Wray cats ven 468 TEXAS, INSTRUMENTS im ps ikinpm aur comes nox ent » aan, rei reste Yous ROE REAVS TH RAT TO AUKE CNG AA TE (Wooen To eROLE SGN ANDO SOPRA ET ROT OSLmechanical date - FORMERLY TYPES 951, 952, AND 953, RESPECTIVELY solute maximum ratings at 25°C Collector-Base Voltage Collector Current... Total Device Dissipation (See Note 1). Total Device Dissipotion ot 100°C Case Temperature... Total Device Dissipation at 125°C Case Temperature. Collector Junction Operating Temperature... . Storage Temperature Range... . - NOTE 1 Dts ty e130 ee emptor be /*E edt DEE ghd dee Texas INSTRUMENTS 2NIIS4 2NI155 2NI756 50v By = 120v 60ma 50ma 40ma <—— 150 mw > << 150" __, 4 - 55°C t0 150°C > TYPES 2N1154, 2N1I55, 2N1156 N-P-N GROWN-JUNCTION SILICON TRANSISTORS BULLETIN NO, OLS 662280, JANUARY 1962-REVISED MAY 1968 465TYPES 2N1154, 2N1155, 2N1156 N-P-N GROWN-JUNCTION SILICON TRANSISTORS ——— electrical characteristics at 25°C case temperature —— tet ends we [ae [em | aoa eee | ae > Le leo Collector Cutoff Current Vor = O0v le=0 T NNISS 6 oo Tasty aoe | ise TL atime k= tae | mH Tale Ya baste Wottee lea Ben | ish vio te= me | 2Ntis6 |. i= tome | mise 300 | obm teauy UC Colder-Emiter Sotraton =a Leon te=15 aNnnss 30 [om er 400 | oh aNns4 te Gm ton Fred Cot tease | Ane | oy | ot — aNmis6 Pry Ver =10¥ p= Smo bs Caan lp gto mst 2 | a mm amet a Comore opt Moe ass 2 | ane mist vn K Gamo fe anne vet te au io *functional tests at 25°C case temperature cam ‘0 amis | 0 . Se Gemmtaie ee ams | 2 ams | 9 « “0 Texas, INSTRUMENTSTYPES 2N1154, 2N1I55, 2N1156 N-P-N GROWN-JUNCTION SILICON TRANSISTORS POWER GAIN TEST CIRCUIT TYPICAL CHARACTERISTICS ‘COMMON-BASE CHARACTERISTICS COMMON BASE CHARACTERISTICS EMITTER CURRENT CASE TEMPERATURE (CHARACTERISTICS - RELATIVE TO VAWE AT Ig ~ -5.mo . 2s 020-8000 le EMITTER CURRENT — mo (CHARACTERISTICS - RELATIVE TO VALUE AT f= 25° € ‘hoo io, 0200 2 Te —CASE TEMPERATURE" C —_—— 73 PRNIEO HUSA TEXAS, INSTRUMENTS RAs stems SEES THE LAT TO MARE OUNCES AT aT TE frost orrice box sata + DALLAS, EKA 74888 IW OMBER TO TuPEOVE DESIGN AKO TO SUPPLY THE BEST ROOT POSE, 467TYPES 2N696, 2N697, 2N717, 2N718, 2N71BA, 2N730. 2N731, 2N956, 2N1420, 2N1507, 2N1613, 2NT/N1 N-P-N SILICON TRANSISTORS BULLETIN NO, DLS 699471, MAY 1963- REVISED AUGUST 1969, Highly Reliable, Versatile Devices Designed for ‘Amplifier, Switching ond Oscillator Applications from <0.1 ma to >150 ma, de to 30 me ‘+ High Voltage + Low Leckage ‘+ Useful hy, Over Wide Current Range ‘mechanical deta Device types 2N717, 2N718, 2N718A, 2N730, 2N731, and 2N956 are in JEDEC TO-18 packages. Device types 2N696, 2N697, 2N1420, 2N1507, 2N1613, and 2N1711 are in JEDEC TO-S packages. ee ei] To.18 ‘THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE CASE Tos Tow 105s ‘absolute maximum ratings at 25°C free-air temperature (unless otherwise noted) FRE] BATT [awrven |2W730 [anose [FNTSZS aurora fawt7vy_| unit ‘dor ase Wotoge Ce Glare Volos Gor Mem] | | so | | | ef | ee ClctorEmitir Vtioge (See Note 2) 3 o Fn Votoge spss fr ps p77 ty Collar Crent 1 10 ww | Total Deven Dspation ot (or below) te | [os] os | 0s] 04) 08 | 08 | w 25°C Feel Temparctre + | tt it + {G10 Hate indated in Preathers)—em| os) | is) | oy | mm | mm | @ | om | om Total Deven Dispation ot (r below) mw] 1s | a pis |] 20] 30] 90] ‘25°C ose Temperature + | # +t + Gio Wote indie in Porattows)—ee |) |) | wy | | @ | wm | on | on Tote Device Dipation ot a 100°C Com Tampere + | ca + Tpwatiog Coco lnc Tampere | SF | TStF | moo [wstt | me _| st |e [amo | * Stocoge Temperate Henge ESC te 200°C OES 1. he ran pls vo he beam eins (yg) ao th ‘eras tmaramonts orate ts ype 296, Wome 3 copnle 2. te apie wie the Bees ia pe cet 2 dete Uamty be TC fate mgt tthe vale at AD eC 4 mee Ant) SC co mgr tthe tte a 123. eC 5. tre Hnety 0 TS Hal tegen tthe cate of 247 /C. {Seve Im We TPC ce tea a a 18 oe ‘tee Intrenet avons te tyes 2077, 4. bron tno eC Ses tre ate at 2a we Ma, savbe ona SDI ne seat ot ws {bor tne te 2c ope at oot Moe ‘a aniptn a rire end sh fr re 4% bee Ise VEC toate grt the fle of 22 me fer mewn ta Hote 7 nt © 1. bows vaty Te BAC feat mpc ate te AS wo, 1. Soa ny Ye 380 cme Yompets atthe f f ILE wes nts MEE ed 408 Texas INSTRUMENTSTYPES 2N718A, 2N956, 2N1420, 2N1507, 2N1613, 2NT711 N-P-N SILICON TRANSISTORS eee “electrical choracteristics at 25°C free-air temperature (unless otherwise noted) rote] aren awase PARAMETER Tos=o| anions | anvate | anisor [anim | YN TAS a BO A Tsao ton tai Wao oa oe Ce a} [eo Gli at fates Yat # [ese xe bat Wo a_i a Vimo. Eaters bats Ya 7 7 : ap = Nexo ellecio Catt Carrnt a - 7 a a ae ~ “ we ‘a a ot ia ii Ga rt a rs a = Sit od rm kp <5 | aie = Ta eet aps Yessan_li tae San pps | 1, iat Caner "HW a nh ne <4 a vr Te hg Sint oe we ww Fn Tae 7 oe we r Tnaiipd Gomer o a ae ort tine 7 | ae Seep en 1 a Se ae or dr ae i a Te il onan Wad rv Co em tt a | eee eee coronal sl! ow] «fol» Cease Sos Oph o Son $4 ee. * wl) on ‘Se operating and ewitching charactorsies Yor ype NTIGA, ZNOES, ZNTGTS, nd 2NI711 on page 430, OTE 12: Thon penis mabe mre wg po eng P20 on, Dy Cra SP, Pale wih mat be ch ht Bango eng da at ce ‘hate rid cc te moa, ats BEC rind de a) 273 MINTED INUSA TEXAS, INSTRUMENTS 469 Tens SEMEN HESERVES THE GAL TO MAKE CANES AT AMT TIME oer onmce wox eit» DALLAR TERRA rat ‘WTR 10 ROVE BION Ano TO SOY TH ST PROT POSETYPE 2N1566 N-P-N SILICON TRANSISTOR BULLETIN NO, OL.6 7911058, MARCH 1973 FOR GENERAL PURPOSE AMPLIFIER APPLICATIONS © VIBR)CEO ---60V e hFE 60 to 200 mechanical data ‘THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE CASE a > [ALL JEDEC TO-39 DIMENSIONS AND NOTES ARE APPLICABLE? ‘absolute maximum ratings at 25°C free-air temperature (unless otherwise noted) Collector-Base Voltage oo gogun eeopodoo sov Coco Erte Vtg (ee Note 1) aoe ee pes 60V Emitwer-Base Voltage. 2 eee ers pens BY Continuous Collector Currer Fi. 50mA, Continuous Device Dissipation at (or below) 25°C Free-Air Tewoeare (See Note2) |. 600 mW ‘Storage Temperature Range 7 L111 1” “ese t0 200% Lead Temperature 1/16 Inch from Case for 10 Seconds Dt ae 230°C ‘electrical characteristics at 25°C free-air temperature (unless otherwise noted) PARAMETER. TERT CONDITIONS. THIN MAX TONTT ViBRICEO Collector Bare Breakdown Voltage i= 100A, t=O 20" v VisA)ceo Collector Emiter Breakdown Vortape ig=10mA,Ig=0, Sw Nowe | 60" v OV. te=0 7 Yeso _Calactor Cutoff Current yee TE so] A Teng Eriter Canal Carent BV, IerO. Tor aA Thee Sttie Forward Gurrent Tranafer Ratio SV, igs Sma, SeeNowS | 60" 200 Vag Bow itr Votioge Tma,—I¢= Oma, Sw Nowe 3 [oss" 1.8] V Wee at) Collector Ein Soratan Voge igi ZmA Ie 10mA, Seow d Thy ‘Sra Sipe! Common Ear Ne Voe=8V, Ie=SmA, fet kite vf xe : Input impedance See acme im Veg=8V_te= tA @ » Smal Sign! Common Emitear VoE= SV TC=EMAY yy yyy [SOT DO "Forward Current Transfer Ratio Vor=5¥, c= 5m < ‘Saal Signal Coron Ear oar Pol Forward Curent Tenster Ratio SSS peek Serer keener | A ‘Commmon-Bave Oper-Grit Vee" EV. ter, f= 1 Mie 10%] oe Cove output capactence ieee ° NOTES: 1, The valus ples whan the bnew diode 2. Beenwlinaaiy to 173° tree tempers 3; Pheu peremeves muntbemesniredonng pune echign y= 900 Ay ove < 2% ‘7ne JeD6C coitere outing for thi deveeeTO.5. 70:3 ft within TOS with he exception of ed ang. IEDC roaara ru sheet canal a appeal eter et infer at etme of rele Uses cnr za “n Texas, INSTRUMENTS eee eee eee |W O}OER 10 MPROVE DESIGN AMO TO SUPLY THE HST PROD PSS.TYPES 2N696, 2N697, 2N717, 2N718, 2N718A, 2N730, 2N731, 2N956, 2N1420, 2N1507, 2N1613, ZNT/11 N-P-N SILICON TRANSISTORS SULLETIN NO. DL-S 693471, MAY 1963-REVISED AUGUST. Highly Reliable, Versatile Devices Designed for ‘Amplifier, Switching and Oscillator Applications from <0.1 ma to >150 ma, de to $0 me h Voltage + Low Leckoge ‘+ Useful hy, Over Wide Current Range ‘mechanteal data Device types 2N717, 2N718, 2N718A, 2N730, 2N731, and 2N9S6 are in JEDEC TO-18 packoges. Device types 2N696, 2N6#7, 2N1420, 2N1507, 2N1613, and 2N1711 are in JEDEC TO-5 packages Ete e | EG Tee T Tl ntnarse Semon” ta Sg 1 O18 TOS E To18 ‘THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE CASE Tos ‘absolute maximum ratings ot 25°C free-air temperature (unless otherwise noted) BREPS | BAZTZ [anrven [AW73® [anose NTSB anrera anizny [unit era Voge [a Catedrnitr etop Ga RoR] || a | | wt tf Car na Ye Ret 2) 3 u ie oe Seat CaecerGoat ia 1 tee Tel Dea Dane oor es) 8h] ex |S —]-as] 05] 0g] aa} ta ‘25°C Froe-Alr Temperature + tt * t (See Wote Indicated in Parentheses)—p-| (3) (5) ” o 7 cu (10) (10) Tot Dein tation tor nb) 29] 18} ta] 18} 18} tsa ‘25°C Case Temperature t tt tt t {See Note Indicated in Porentheses}—em | (4) (Cl (8) (6) {e) 4) m) my Tal Bresso wus] a Pasa a 100°C Case Temperature, + tt tt t Operating Collector Junction Temperature st [ste | 200 [arstt | m0 | wst [200 200 - Seg Teper Rage aC HOC YOU De sig) op et‘ Iman prac mene wow 1h ir ry — terete» pt Sae'atpeos aun tt 2 ea tay WE bar agree te fd BRAS ce testes een 4, Dera nearly to 175%C cose tomporetore ot the rate of 13.2 me/C*. ee een ele) eee atm ny I Pre owe tt 2a oof : se ope mu 1am ten fra ge as at 24 ON aie, "ea aa OF see ts {be Indy SOC one tapos oth te He ‘Bulan’ ea swess wim eopoptet earig To, 4 ham nay fra mop et Sa ae Shake ret 3 an mee fe ope te oat PE 1 hae ty 0 oe ome a a are Texas In STRUMENTS anTYPES 2N718A, 2N956, 2N1420, 2N1507, 2N1613, 2NT711 N-P-N SILICON TRANSISTORS an lectrical characteristics at 25°C free-air temperature (unless otherwise noted) Toe] anriea ae PARAMETER TEST CONDITIONS: ct aniera | awvezo | anise | amin) ONT TAN AR a mS Timea Gna Fat 7 Te [as 7 Te Gantt es Tae z F HESS cee Boma eof roe | F ‘ime ten ber Ye 7 7 : Te 7m ir ww = leno a Cat Ce at % ca ie a 7 = ain er a Ca ® z % a % se oe Co i any Renee | # ¥ Tee a a af ieee = gba oo apart a ‘aati Sin Ya sate wpe Seca Gone fal email anol 5 ae aes rate — Ta = i * Signal Commee-Bave fark wt Se to et 7 we aiid ear wa ea ae Sept tot te aa ae Tea Ge We a Me Few oe ed tte =m oe Oa) Fe oa er tte wife fe omer or yam Soe Output Capacitance s * x * ” tet . «| # at 25°C free-air temperature mes] aor 11st conDmons ma war - wee | wa rr | ma meee Eee eet Le ‘witching characteristics at 25°C free-air temperature ease test conosmons owe 1 fig Tw ‘fg 1° = ‘STE Then promos wo bemrowrd wry pb iingos, PW = 310 pn, Dey Cee PK, Fae wih met ch et Daag eb doen ce ge gente then he oa aca ote mer. tot REC rn deta rine referenced figure ie shown on page 430. Texas INSTRUMENTS TAS NSEUMENS RESERVES THE MIGHT TO MAKE GUNG AT ANY TOME (WOFDER TO IaREOVE CEIGK AMO TO SUPPLY THE HST PRODUCT POSE,TYPES 2N1671, 2N1671A, 2N167IB, 2N2160 P-N BAR-TYPE SILICON UNWJUNCTION TRANSISTORS BULLETIN NO. DLS 683180, OCTOBER 19¢2—REVISEO MAY 1908, Designed for Mediom-Pewer Switching, Oselletor and Pulse Timing Circuits © Highly Stable Negative Resistance ‘ond Firing Voltage © Low Firing Current © High Pulse Current Copabilities © Simplified Circuit Design *mechanieal dete Package outline is similar to JEDEC TO-6 except for lead position. Approximately weight is 1 gram. "ALL LEADS INSULATED FROM CASE. ‘absolute maximum ratings at 25°C free-air temperature (unless otherwise noted) gino saae mea amare Emiter-Bote Reverie Voltage. . fe aM Emitior-Base Reverse Vohiage below 140°C Junction Temperature | |. | | “wv heseibcee| Volioge Saistem crete erarerar ar Sebi l lll gsy 3sy wiiwhcerlo GaGcodudnodddd b4085 50 C14 DC Emiter Curent 2 ll! Go oabdGha 70 ma Pook Emitter Current (SeeNote 1) ee ll ae Peck Emitter Current below 140°C Junction Temperature . ae a Total Device Dissipation oto blow) 25°C Freer Tempraivrs (See! Note 2 89° Operating Temperature Range (See Note 3). - Saree cere ‘Storage Temperature Range (See Note 4). 3 st ll) eset te 1508 Lead Temperature Xs Inch from Case for 10 Seconds | 1 1. se + 260°C 260% OTE: Cpt dure — 10 oo, a te — al ene pote npn et eed by sl cet, 1 bana To VC tle tmp the tea 2 me/9C (S417 to ermal rc ce = 06°C) 4 Yam iasrmits get «asin ope tempo a SPC tel. Bete Hey fhe reo 3 /C. ‘Lam nme orton © matin ope pte a WIC nde DEC pt tate 2 Texas INSTRUMENTS ana4 TYPES 2N1671, 2NIG7IA, 2NI67IB, 2N2160 P-N BAR-TYPE SILICON UNIJUNCTION TRANSISTORS “anie7i ‘amieria [aware — [a Lien! Ca [gS wt etn te([nto [ste | ele 7. ie Se tae wo [oa Pae Perfo Pee Pao Tejano atin Goat CO Tmo —_ Ea tw Gort oy =P 7 =| ip Poneto = B + = [Mees Eat etn Foe z 5 5 7 Ty Yale nie Gv 7 7 7 7 = Yon Pawdie Prt Pe Yap 7 7 7 7 I “Ines DEC date PARAMETER MEASUREMENT INFORMATION. nse Slondalt Roto ~ This porometer is defined in terme ov a M100 A Full Seale Vaan + Mp where 4 obout 0.56 vol at 25°C ond, wih temperature 100 2 SY, een, wi he lig eae asa WS tphey, = Ov sed te mactvre it shown In the igure, In Cand the enncton transistor form « ralonetion ox lator, and eter with the dade Dy ovtomet Vp Te we the creat, dived to moke the curent mater My raed ful le, The “eal” totter then i “ih 7 shout 2 milivale/ deg of the inet 2 peck voltage ly wbrocting the vellage ton pushed, ond 8, he "eat led ond the valve of 1) is eeod diecly from Corrnponding te fllacla dellcion of FlOURE 1 — TEST CIRCUIT FOR INTRINSIC STANDOFF RATIO (n) OURE 2— Voy, TEST CIRCUTT Texas INSTRUMENTS EMITTER —AASE-ONE VOLTAGE ‘EMITTER CURRENT PHOURE 3— GENERAL STATIC EMITTER CHARACTERISTIC CURVE 1 eat ee oy respi fre lt ho 1 npr tat Dry fe em pee igre. i AAS NSTRUMENTS RESENES THE MT TO. WAKE ONG AT TIME 1 O¥DER 10 IMPROVE DESIGN AKO TO SuPLY THE WST PRODUCT POSE, onTYPES 2N696, 2N697, 2N717, 2N718, 2N718A, 2N730, 2N731, 2N956, 2N1420, 2N1507, 2N1613, 2NTN N-P-N SILICON TRANSISTORS GULLETIN NO, OLS 692471, MAY 1963-REVIGED AUGUST 1960 Highly Reliable, Versatile Devices Designed for Amplifier, Switching and Oscillator Applications from <0.1 ma to >150 ma, de to 30 me © High Voltage + Low Leakage + Useful hye Over Wide Current Range ‘*mechanieal data Device types 2N717, 2N718, 2N71BA, 2N730, 2N731, and 2N9S6 are in JEDEC TO-18 packages. Device types 2N696, 2697, 2N1420, 2N1507, 2N1613, and 2N1711 are in JEDEC TO-5 packages. Tos ‘THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE CASE Tos ‘absolute maximum ratings of 25°C free-air temperature (unless otherwise noted) BNGRS | 2N71Z | anziea [2N730 [anose [2N1420 [awrers [anizi | UNIT Coiector Base Voltoge a « 5 a 5 a 5 5 v “cllcorEmitor Vohoge (oe Hote 1) | 40 | @ | 50 | @ | 0 | 0 | 50 | |v “Colactor-Emitter Voltage (See Nete 2) 2 v Se pee es tt chow oes | n ir aot fae eae epee pees 25°C Froe-Air Temperature + tt + + {See Note Indicated in Parenthbeses)—e| (3) (5) a (u) a o (10) 110) Tate pee Tap ep 25°C Cose Temperature + t tt t {See Mote Indicated in Porentheses}——m- | (4) (@ e) 6) (8) 4 4M) a Total Device Dissipation at ry O75 10 O75 19 0 W W . 100°C Cose Temperature. + tt tt + ‘Operating Collector Junction Temperature vst [inst [200 Tirstt [200 Wst 200 200 c ‘Storage Temperature Ronge 65°C to 200°C eee ae we eee ee Ste eee eae eat materia gee ee 4 ete tery USPC cee tpt ae te af 12 eC, a eee 5 Done Muy fe USC nce ampere att soe of 247 me /C. ‘6 Bevate Nnewly No LSC case temperature at the vate of 1A ome /C®. ‘Figen, Neemenee everett toes, 20717 7 Ao em ee ee eo 28 SATU, 20, at DUS fo be soil of {dome tty fe 20°C con pe era Ho sey Ae yee 4 ben ty WIRE neal pees athe eo 338 w/e, Srnec tone Pome ee 1 dons ney Ye 20°C Tava poten at ee ot 48 me 1 Dot ye 30% con ego the ato mee tee HDC gd dt uses cx nae Texas, INSTRUMENTS a5TYPES 2N718A, 2N956, 2N1420, 2N1507, 2N1613, 2NT7N N-P-N SILICON TRANSISTORS _—— —— “electrical characteristics at 25°C free-air temperature (unless otherwise noted) rote] aurea Nose anansren vest connmons | “rogme| ania | awieao | amiaey |amiviz | °*™ TR RAR] wb WA DAR A meio Ginrton tains Yao a [ojos Tmtao (tortie bere Ye % q Tyce icra ders Wr Ee ee Vimrao Eanes badew Yee , , . | = [a Cae Nexo all Cal at caw | me ‘ain i i Ga fort ear se % imei Saat * aa ae a - Teg oe ta Wo wf | Yessir ei ewan Yoo a Sauls! Gone a ai] ae Salt pd wo 71 a i i Salsa! nme tse wt wt aK fle em ae 3 iD we we “ali! Gone a a5 [ae Soe Spt atone ate ap ae Sipe Comment te ae | Se Feed Cot Tf Bate oa 8 esi Sipal Game ji | ive Comet Tt Bae ase Senna al 8] 8] 8] comet Oe , Sete peta a= le ° ol] ‘Se aitching charctarnis fr fvpes ANT IA aed 2NBS on pope 490 or O72 ‘operating chorocterlstics at 25°C free-air temperature arse moe pananeren TST cONoATIONS can aureis—] vnir Te [marr | wae 1 Sy as Fe sts fefulea G78 1, Then pram be mead wg le eniq PHS 30 , {oage pra thas he qd sey oe meee 106 gid ete iy Cle Sa in wg met hh igo bing dw a 416 TEXAS, INSTRUMENTS oer once oox sit » DALAR TEXAS 782 ean MENT EEE HHO 0 AE OUNCES A a Te 1 nOER TO INPOAE DESIGN AKO TO SUPPLY THE BEST PRODUCT POSLETYPES 2N698, 2NG99, 2N719, 2N7I9A, 2N720, 2N720A, 2N870, 2N871, 2N1889, 2N1890, 2N1893 N SILICON TRANSISTORS BULLETIN NO. DL'S 733442, MAY 1963-REVIGED MARCH 1973 Highly Reliable, Versatile Devices Designed for Amplifier, Switching and Oscillator Applications from <0.1 ma to >150 ma, de to 30 me + High Voltage + Low Leakage + Useful yy Over Wide Current Range mechanical date Device types 2N719, 2N719A, 2N720, 2N720A, 2N870 and 2NB71 are in JEDEC TO-18 packages". Device types 2N698, 2N699, 2N1889, 2N1890, ond 2N1893 are in JEDEC TO-39 packages’ fo = | . areas ‘ - = tLe oxemarl B TOI _THECOLLECTOR ISIN ELECTRICAL CONTACT WITHTHE CASE _ TOW ‘absolute maximum ratings at 25°C free-air temperature (unless otherwise noted) ‘2maoe | amoos | 24712 [anrs0n]anzaon] 28870 [261809[ara9a | unit [ater Voge ao | ef tao] a0] toe | 100 | ae] [lec nr Ytogs Ge Rote T Cs aan Yoge Get Note) @ ee | Emitter-Base Voltoge 7 s s 7 7 7 7 7 ¥ Cole Gat 18 we To evi spin a alow oa] faa 058s as] 25° Tr Ai Teper +f . (See Mote Indicated in Porentheses}—= ao (5) a” m a cus 3 8) Teil iD a(n 30] 8] ts Papa a0] 25°C ta Tnpere e] td tft |e Gerteeledioedintecteni—e| wy | | «| oo | oy | am} w| @ Serge Teper Hage aCe HPC NST 1h i ane ani as gap to a "te teronons gman han dn a 1 toon aches aban Ste evn Sik phage ne Fat ohio 2. twat ma Yo OC fae emp ate ea 37 m/C Sree ae {hs tay hon open he mt Fd oe La sisues un seese + Rema wane nee wrton taco Site anette and aoe PPh tetas an WlBeTaliounetscrente 1 ditty nt icatopenon wont 20 2 a 1 hata MC son open rtd ee rsranans sommes is orm Bee 4 ba a ah nea opener a Sport eae ape oa Son oC san peor avn ee Sok Bata Su lees ‘Sect lrtor show ie Nowe Sand 18. The SEOEE raed oie for th devo 705. 10.30 fale witun TOS wks th scan ot ea ert oe ee Texas INSTRUMENTS “nTYPES 2N720, 2N720A, 2N870, 2N871, 2NI -N SILICON TRANSISTORS ee 2N1890, 2N1893 electrical characteristics at 25°C free-air temperature (unless otherwise noted) | to-tee| 2720 ‘N20, -aN87O. ‘ust conomons [ T0-39e aNie93, ‘890 —| unr ain Tain MA In ma ‘aa Vimct0 aden Yl ‘lnc ne Vimo tadeen Yt “alter itr Mimic tnaoon Yao mir toe Niomi90_tackéown Volto exo lat Cet cart xo Eni Cot art ls |e |efefelelele| |< ‘Se awe Comat fee Trae Hate 7 Flt) |-[-[- Ise tet ee sm, = Te 7 fy we ‘aS one ee apt Mince ees aos a aT 1” 0 [pai TiS (ome nl Se Fawed Ge Fw Rt ar tate Sale Cooma Ferd Gare Teer Bate as Comoe se Ga tre tpt Captor wr oy fy pect apt Cece s ole TE Te Tn proton te monn i ol wg. P1300 pe. ‘he id este sch Ting dig tut Sl cava cage ge fen te ‘apie cy he mre nce IEEE gee ee TEXAS, INSTRUMENTS xe SM RAs STROMENS RESERVES THE HEAT TO WAKE ONES TW-OFDCR To TKPROVE DESIGN AMO TO SUPLY THE BEST PGC Ps se Te me,