A16-1

Appendix 16: Equation Sheet

Chapter 1: Review of Modern Physics
1.2. Quantum mechanics
p
h
=

e v
hc
h E
ph
= = =
) ( ) ( ) (
) (
2
2
2 2
x E x x V
dx
x d
m
+ = + +
+

... 2, 1, with , )
2
(
2
2
*
2
= = n
L
n
m
h
E
x
n
... 2, 1, with ,
8
2 2 2
0
4
0
= = n
n h
q m
E
n
c

1.3. Electromagnetic theory
c
) ( ) ( x
dx
x d
=
E
) (
) (
x
dx
x d
E =
|

c
| ) ( ) (
2
2
x
dx
x d
=
A16-2
Chapter 2: Semiconductor Fundamentals
2.3. Energy bands
|
o
+
=
T
T
E T E
g g
2
) 0 ( ) (
2.4. Density of states
c c c
E E E E m
h
dE
dN
L
E g > = = for ,
2 8 1
) (
2 / 3
*
3 3
t

c c
E E E g < = for , 0 ) (
2.5. Carrier distribution functions
kT E E
E
F
f
/ ) (
) (
e 1
1

+
=
kT E E
E
donor
F d
d
f
/ ) (
2
1
) (
e 1
1

+
=
kT E E
E
acceptor
F a
a
f
/ ) (
) (
e 4 1
1

+
=
1 e
1
/ ) (
) (

=
kT E E
E
BE
F
f
kT E E
E
MB
F
f
/ ) (
) (
e
1

=
2.6. Carrier densities
}

=
c
E
c o
dE E f E g n ) ( ) (
}

=
v
E
v o
dE E f E g p )] ( 1 )[ (
c F c F o
E E E E
m
n >
|
|
.
|

\
|
= for , ) (
2
3
2
2 / 3
2 / 3
2
*
2
t
and T =0 K
kT
E E
c o
c F
e N n

= with
2 / 3
2
*
]
2
[ 2
h
kT m
N
e
c
t
=
kT
E E
v o
F v
e N p

= with
2 / 3
2
*
]
2
[ 2
h
kT m
N
h
v
t
=
kT E
v c i
g
e N N n
2 /
=
2
i o o
n p n =
) ln(
4
3
2
) ln(
2
1
2
*
*
e
h v c
c
v v c
i
m
m
kT
E E
N
N
kT
E E
E +
+
= +
+
=
A16-3
kT E E
i o
i F
e n n
/ ) (
=
kT E E
i o
F i
e n p
/ ) (
=
i
o
i F
n
n
kT E E ln + =
i
o
i F
n
p
kT E E ln =
eV 6 . 13
2
0
*
r
cond
d c
m
m
E E
c
=
2 2
)
2
(
2
i
a
d
a
d
o
n
N N N N
n +

=
+ +

2 2
)
2
(
2
i
d
a
d
a
o
n
N N N N
p +

=
+ +

) exp(
kT
E F
n n n n
i n
i o

= + = o ) exp(
kT
F E
n p p p
p i
i o

= + = o
2.7. Carrier Transport
m
q v t
=
A
=
| |
| |
E

o



min max
min
) ( 1
r
N
N
+

+ =
E

n
n q J = E ) (
p n h e
p n q v p q v n q J + = + =
) (
p n
p n q
J
o + = =
A
E

) (
1 1
p n
p n q o

+
= =
sat
v
v
E
E
E

+
=
1
) (
dx
dn
D q J
n n
=
dx
dp
D q J
p p
=
t n n n
V
q
kT
D = =
t p p p
V
q
kT
D = =
dx
dn
D q n q J
n n n
+ = E
dx
dp
D q p q J
p p p
= E
) (
p n total
J J A I + =
A16-4
2.8. Carrier recombination and generation
n
p p
n n n
n n
G R U
t
0

= =
p
n n
p p p
p p
G R U
t
0

= =
) (
2
i b b
n np b U =

o
th t
t i
i
i
SHR
v N
kT
E E
n n p
n pn
U
) cosh( 2
2

+ +

=
) ( ) (
2 2
i p i n Auger
n np p n np n U I + I =
A E
x P
G G
ph
opt
light n light p
) (
, ,
o = =
) (
) (
x P
dx
x P d
opt
opt
o =
2.9. Continuity equation
) , ( ) , (
) , ( ) , (
1
t x R t x G
x
t x J
t
t x n
n n
n
q
+
c
c
=
c
c
) , ( ) , (
) , (
) , (
1
t x R t x G
x
t x J
t
t x p
p p
p
q
+
c
c
=
c
c

n
p p p
n
n t x n
x
t x n
D
t
t x n
t
c
c
c
c 0
2
2
) , ( ) , (
) , (

=
p
n n n
p
p t x p
x
t x p
D
t
t x p
t
c
c
c
c
0
2
2
) , ( ) , ( ) , (
=
n
p p p
n
n x n
x d
x n d
D
t
0
2
2
) ( ) (
0

=
p
n n n
p
p x p
x d
x p d
D
t
0
2
2
) ( ) (
0

=
2.10. The drift-diffusion model
) (
+
+ =
a
d
N N n p q
c

=
dx
dE

E =
dx
d|
E q
dx
dE
i
=
kT E F
i
i n
e n n
/ ) (
=
kT F E
i
p i
e n p
/ ) (
=
dx
dn
D q n q J
n n n
+ = E
dx
dp
D q p q J
p p p
= E
t
1
) cosh( 2
0
2
1
kT
E E
n p n
n np
x
J
i t
i
i n
q

+ +

c
c
=
t
1
) cosh( 2
0
2
1
kT
E E
n p n
n np
x
J
i t
i
i
p
q

+ +

c
c
=
A16-5
Chapter 3: Metal-Semiconductor Junctions
3.2. Structure and principle of operation
_ | u =
M B
, (n-type semiconductor) ,
M
g
B
q
E
u + = _ | , (p-type semiconductor)
type - n ,
,
q
E E
n F c
M i

u = _ | type - p , -
,
M
p F c
i
q
E E
u

+ = _ |
3.3. Electrostatic analysis
) (
2
2
+
+ = =
a
d
s s
N N n p
q
dx
d
c c
|

) sinh (sinh
2
2
2
t
F
t
F
s
i
V V
n q
dx
d | | |
c
|
+

=
i
d
a
t
F
n
N N
V 2
sinh
+

=
|

d d
x x qN x < < = 0 ) ( , and x x x
d
< = 0 ) (
x x x
x x (x
qN
x
d
d d
s
d
s =
< < =
0 ) (
0 x) - ) (
E
E
c
x x
x qN
x
x x -x) (x x
qN
x
d
s
d
d
d d
d
s
d
s =
< < =

2
) (
0 ] [
2
) (
2
2 2
c
|
c
|

s
d
s
d d
Q x qN
x
c c
= = = ) 0 ( E
s
d
d
a i
x qN
x V
c
| |
2
) 0 (
2
= = =
d
a i s
d
qN
V
x
) ( 2
=
| c

d
s
a i
d s
a
d
j
x V
N q
dV
dQ
C
c
|
c
=

= =
) ( 2

3.4. Schottky diode current
] 1 ) )[exp( exp(
max
=
t
a
t
B
c n n
V
V
V
N q J
|
E
s
d a i
N V q
c
| ) ( 2
max

= E
] 1 ) )[exp( exp( =
t
a
t
B
c R n
V
V
V
N qv J
|

m
kT
v
R
t 2
= and
|
|
|
.
|

\
|
= O
E
2 / 3 *
2
3
4
exp
B
qm |

O = n v q J
R n

A16-6
3.5. Metal-Semiconductor Contacts
3.5.1. Contact resistance to a thin semiconductor layer
2 2
2
) ( ) (

x I
dx
x I d
= with
s
c
R

d
x d
I x I
sinh
sinh
) (
0

d
x d
W
R
I x V
s
sinh
cosh
) (
0

d
W
R
R
s c
c
coth =
W
L
R
W
R
R
s
s c
+ =

2 , for d >>
3.6. Metal-Semiconductor Field Effect Transistor (MESFETs)
P i
s
d
i T
V
d qN
V = = |
c
|
2
2

(
(

|
|
.
|

\
|

+
=
P
G i
P
D G i
D d n D
V
V
V
V V
V
L
W
d N q I
2 / 3 2 / 3
) ( ) (
3
2 | |
for V
G
>V
T

(
(

|
|
.
|

\
|

=
P
G i
P T G d n sat D
V
V
V V V
L
W
d N q I
2 / 3
3
2
,
) (|
with
T G sat D
V V V =
,


Chapter 4: p-n Junctions
4.2. Structure and principle of operation
2
ln
i
a d
t i
n
N N
V = |
a i
V =| |
4.3. Electrostatic analysis of a p-n diode
p n d
x x x + =
n p a
d
a
d
x x x N N q N N n p q s s ~ + =
+ +
for , ) ( ) (
A16-7
0 ) (
) (
) (
0 ) (
=
=
=
=
x
qN x
qN x
x
d
a

x x
x x
x x
x x
n
n
p
p
s
s s
s s
s
for ,
0 for ,
0 for ,
for ,

n d n
x qN Q =
p a p
x qN Q =
n p a
d
s s
x x x x N x N
q x
dx
(x) d
s s ~ =
+
for , )) ( ) ( (
) (
c c
E

0 ) (
) (
) (
) (
) (
0 ) (
=

=
+
=
=
x
x x qN
x
x x qN
x
x
s
n d
s
p a
E
E
E
E
c
c

x x
x x
x x
x x
n
n
p
p
s
s s
s s
s
for ,
0 for ,
0 for ,
for ,

s
n d
s
p a x N q
x N q
x
c c
= = = ) 0 ( E
d
a i
x
V
x
) ( 2
) 0 (

= =
|
E
p a n d
x N x N =
d a
a
d n
N N
N
x x
+
=
d a
d
d p
N N
N
x x
+
=
s
p a
s
n d
a i
x N q x N q
V
c c
|
2 2
2 2
+ = ) )(
1 1
(
2
a i
d a
s
d
V
N N q
x + = |
c

) (
1 2
a i
d a d
a s
n
V
N N N
N
q
x
+
= |
c
) (
1 2
a i
d a a
d s
p
V
N N N
N
q
x
+
= |
c

d a
d a
a i
s
j
N N
N N
V
q
C
+
=
) ( 2|
c

d
s
j
x
C
c
=
4.4. The p-n diode current
t a
V V
n n n
e p x x p
/
0
) ( = =
t a
V V
p p p
e n x x n
/
0
) ( = =
A16-8
p n p n
L x x L x x
n n n
e B e A p x x p
/ ) ( / ) (
0
) (

+ + = >
p p p
D L t =
n p n p
L x x L x x
p p p
e D e C n x x n
/ ) ( / ) (
0
) (
+ +
+ + = s
n n n
D L t =
] sinh coth cosh )[ 1 ( ) (
'
/
0 0
p
n
p
n
p
n V V
n n n n
L
x x
L
w
L
x x
e p p x x p
t a

+ = >
] sinh coth cosh )[ 1 ( ) (
'
/
0 0
n
p
n
p
n
p
V V
p p p p
L
x x
L
w
L
x x
e n n x x n
t a
+
+
+
+ = s
n n n
x w w =
'

p p p
x w w =
'

) 1 ( ] ) ( ) ( [
/
~ + = + = =
t a
V V
s r n p p n
e I J x x J x x J A I
)] coth( ) coth( [
'
0
'
0
p
n
p
n p
n
p
n
p n
s
L
w
L
p D
L
w
L
n D
A q I + = (general case)
] [
0 0
p
n p
n
p n
s
L
p D
L
n D
A q I + = (long diode) ] [
'
0
'
0
n
n p
p
p n
s
w
p D
w
n D
A q I + = (short diode)
) 1 (
/ 2
=

t a
V V
i b b
e w b n q J ) 1 (
2
2 /
'
=
t a
V V i
SHR
e
x qn
J
t

s a a
IR V V + =
*

t a
V V
s
e J J
q /
=
mV/decade 59.6
slope
1
slope
) e log(
= =
t
V
q
p
V V
p s p
t a
I Q t ) 1 e (
/
,
= A
p
p n
p s
L
D p A
q I
0
,
=
t
p
V V
p s
p d
V
I
C
t a
t
/
,
,
e
= (long diode)
t
p r
V V
p s
p d
V
t I
C
t a
,
/
,
,
e
= (short diode) with
p
p
p r
D
w
t
2
2
'
,
=
A16-9
4.5. Reverse bias breakdown
V/cm
) cm 10 / log( 1
10 4
3 16
3
1
5
-
br
N
x

= E
qN
V
s br
i br
2
2
c
|
E
+ =
qN
x
s br
br d
c E
=
,

6 2 where ,
1
1
< <

= n
V
V
M
n
br
a

O = n v q J
R n

|
|
.
|

\
|
= O
E
2 / 3
*
2
3
4
exp
g
E
q
m

4.6. Optoelectronic devices
ph
V V
s
I I I
t a
= ) 1 e (
/

in ph
P
h
q
I
v
=
max ,

v
o
h
qP
R I
in d
ph
) e 1 )( 1 (

=
f I q i A >= < 2
2

oc sc
m m
V I
V I
= Factor Fill
1 e ion amplificat Roundtrip
2 1
2
= = R R
gL

2 1
1
ln
2
1
R R L
g =
) (
th out
I I
q
h
P =
v
q
Chapter 5: Bipolar Junction Transistors
5.2. Structure and principle of operation
BE n E E
x w w
,
'
=
BC p BE p B B
x x w w
, ,
'
=
BC n C C
x w w
,
'
=
|
|
.
|

\
|
+

=
E B E
B
BE BE i s
BE n
N N N
N
q
V
x
1
) ( 2
,
,
| c

|
|
.
|

\
|
+

=
E B B
E
BE BE i s
BE p
N N N
N
q
V
x
1
) ( 2
,
,
| c

A16-10
|
|
.
|

\
|
+

=
C B B
C
BC BC i s
BC p
N N N
N
q
V
x
1
) ( 2
,
,
| c

|
|
.
|

\
|
+

=
C B C
B BC BC i s
BC n
N N N
N
q
V
x
1
) ( 2
,
,
| c

2 ,
ln
i
E B
t BE i
n
N N
V = |
2 ,
ln
i
C B
t BC i
n
N N
V = |
B C E
I I I + =
d r p E n E E
I I I I
, , ,
+ + =
B r n E C
I I I
, ,
=
d r B r p E B
I I I I
, , ,
+ + =
E
C
I
I
= o
o
o
|

= =
1
B
C
I
I

r E T
o o o =
p E n E
n E
E
I I
I
, ,
.
+
=
n I
I I
E
B r n E
T
,
, ,

= o
E
d r E
r
I
I I
,

= o
5.3. Ideal transistor model
|
|
.
|

\
|

|
|
.
|

\
|
= 1 ) exp(
'
,
2
,
t
BE
B B
B n
E i n E
V
V
w N
D
A qn I
|
|
.
|

\
|

|
|
.
|

\
|
= 1 ) exp(
'
,
2
,
t
BE
E E
E p
E i p E
V
V
w N
D
A qn I
2
1 ) exp(
' 2
,
B
t
BE
B
i
E B n
w
V
V
N
n
A q Q
|
|
.
|

\
|
= A
n
B n
B r
Q
I
t
,
,
A
=
r
B n
n E
t
Q
I
,
,
A
=
B n
B
r
D
w
t
,
2
'
2
=
'
,
'
,
1
1
E E B n
B B E p
E
w N D
w N D
+
=
n B n
B
n
r
T
D
w t
t t
o
,
2
'
2
1 1 = =
E
B B E p
E E B n
w N D
w N D
o | ~ ~ if ,
'
,
'
,

A16-11
BC n BC p
s
B B
BC j
B
A
x x
w qN
C
Q
V
, ,
'
,
+
= =
c

BE j
B
t
BE
C
t
C
Q
V
dV
I d
V
n
,
1
ln
1
+ ~ =
A16-12
Chapter 6: MOS Capacitors
6.3 MOS analysis
S M FB
V u u =
) ln(
2
i
a
t
g
M S M
n
N
V
q
E
u = u u _ (nMOS) ) ln(
2
i
d
t
g
M S M
n
N
V
q
E
+ u = u u _ (pMOS)
Poly-silicon: ) ln(
,
a
poly a
t S poly
N
N
V = u u (p-type) ) ln(
,
2
a poly d
i
t S poly
N N
n
V = u u (n-type)
}
u =
ox
t
ox
ox ox
i
MS FB
dx x x
C
Q
V
0
) (
1

c
with
ox
ox
ox
t
C
c
=
) (
T G ox inv
V V C Q = for
T G
V V > 0 =
inv
Q for
T G
V V s
i
a
t F
n
N
V ln = | (nMOS)
i
d
t F
n
N
V ln = | (pMOS)
ox
s a s
s FB G
C
qN
V V
| c
|
2
+ + = for V
FB
<V
G
<V
T
and
F s
| | 2 0 s s (nMOS)
ox
s d s
s FB G
C
qN
V V
| c
|
2
= for V
FB
>V
G
>V
T
and
F s
| | 2 0 s s (pMOS)
F s
a
s s
d
N q
x | |
| c
2 0 for ,
2
s s =
a
F s
T d
N q
x
| c 4
,
=
ox
F a s
F FB T
C
qN
V V
| c
|
4
2 + + = (nMOS)
ox
F d s
F FB T
C
qN
V V
| c
|
4
2 = (pMOS)
FB G ox HF LF
V V C C C s = = for ,
T G FB
s
d
ox
HF LF
V V V
x
C
C C s s
+
= = for ,
1
1
c

T G
s
T d
ox
HF ox LF
V V
x
C
C C C >
+
= = for ,
1
1
and
,
c

s
D
ox
FB
L
C
C
c
+
=
1
1
with
a
t s
D
qN
V
L
c
=
A16-13
Chapter 7: MOS Field Effect Transistors
7.3. MOSFET analysis
Linear model
) ( | | for , ) (
T GS DS DS T GS ox D
V V V V V V
L
W
C I << =
Quadratic model
T GS DS DS T GS ox D
V V V
V
V V V
L
W
C I
DS
< = for , ]
2
) [(
2

T GS DS
T GS
ox sat D
V V V
V V
L
W
C I >

= for ,
2
) (
2
,

DS ox quad m
V
L
W
C g =
,
) (
, T GS ox sat m
V V
L
W
C g =
) (
, DS T GS ox quad d
V V V
L
W
C g = 0
,
=
sat d
g
Channel length modulation
T GS DS DS
T GS
ox sat D
V V V ) V (
V V
L
W
C I > +

= for , 1
2
) (
2
,

Variable depletion layer model
) ) 2 ( ) 2 (( 2
3
2

)
2
2 (
2 3 2 3
SB F DB F a s n
DS
DS
F FB GS
ox n
D
V V qN
L
W
V
V
V V
L
W C
I
+ +
=
| | c
|

} 1 ) ( 2 1 { 2
2
2
,
+ =
FB GB
s a
ox
ox
s a
F FB GS sat DS
V V
qN
C
C
qN
V V V
c
c
|
) (
*
, T GS ox n sat m
V V
L
W
C g =
|
|
|
|
|
|
.
|

\
|
+
+
=
s a
ox SB F
n n
qN
C V
c
|

2
*
) 2 ( 2
1
1
1
A16-14
7.4. Threshold voltage
) 2 ) 2 ( (
F SB F T
V V | | + = A
ox
a s
C
qN c

2
=
7.7. Advanced MOSFET issues
) exp(
t
T G
D
V
V V
I


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