GENERAL DESCRIPTION
Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits.
TO-220F
CONDITIONS VBE = 0V MIN MAX 1000 450 5 10 40 1.5 UNIT V V A A W V A V s
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time
1.0
LIMITING VALUES
SYMBOL
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Emitter-base voltage(open collector) Collector current (DC) Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature
CONDITIONS VBE = 0V
MIN
Tmb 25 -55
UNIT V V V A A A W
ELECTRICAL CHARACTERISTICS
SYMBOL
Collector-emitter sustaining voltage Collector-emitter saturation voltages Base-emitter satuation voltage DC current gain Diode forward voltage Transition frequency at f = 1MHz Collector capacitance at f = 1MHz
Switching times(16KHz line deflecton circuit) Turn-off storage time Turn-off fall time
CONDITIONS VBE = 0V; VCE = VCESMmax VBE = 0V; VCE = VCESMmax Tj = 125 IB = 0A; IC = 100mA L = 25mH IC = 2.5A; IB = 0.5A IC = 2.5A; IB = 0.5A IC = 0.5A; VCE = 5V IC = 0.1A; VCE = 10V VCB = 10V IC=2.5A,IB1=-IB2=0.5A,VCC=150V
IC=2.5A,IB1=-IB2=0.5A,VCC=150V
MIN
UNIT mA mA V
10 5
1.5 1.5 50
V V V MHz pF s s
5.0 1.0
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