PN Junction

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PN junction is formed when a P type semiconductor material meet an N type semiconductor material. junction

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e
Anode P region

e e e e e e e e e N region

cathode

A P-type region has free holes and an N-type region has free electrons.

PN Junction
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Depletion region
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Anode P region

e e e

e e e e e e e N region

cathode

Some of the free electrons in the N region cross the junction to fill some of the holes in the P region. When one of the electrons in the N-type material leaves its parent atom, that atom becomes a positive ion. When the electron joins another atom on the P region, that atom becomes a negative ion.

PN Junction
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Formation of the barrier potential

Ionization or barrier potential

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Anode P region

+ + +
N region

cathode

The result is that a depletion region is formed which does not has free electrons and holes. The positive ions and the negative ions create an ionization potential or barrier potential. The barrier potential is 0.7V for silicon and 0.3V for germanium.

PN Junction
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Contains carriers- should semi-conduct

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Contains carriers- should semi-conduct

e Anode P region

e e e e e e e N region
Contains no carriers- should insulate

cathode

Forward bias
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The figure shows a PN junction diode is connected to an external battery in such that the depletion region is eliminated. The positive terminal of battery repel holes on the P type and pushes them toward junction. The negative terminal of battery repels the electrons and pushes them toward the junction. This collapses (removes) the depletion region.

Reverse bias
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The positive terminal of the battery is applied to the N type material. This attracts the free electrons away from the junction . The negative terminal of the battery attracts the holes in the P type material. This makes the depletion region wider than it was when no voltage was applied.