MOS Transistors

Yannis Tsividis
Small-Signal Modeling
Conductance Parameters Due to
Gate and Body Leakage
Based on Tsividis/McAndrew; Copyright Oxford University Press, 2011
1
These slides are based on Y. Tsividis and C. McAndrew,
Operation and Modeling of the MOS Transistor, Copyright
Oxford University Press, 2011. They are meant to be part of a
lecture, and may be incomplete or may not even make sense
without the accompanying narration.

Gate current

Based on Tsividis/McAndrew; Copyright Oxford University Press, 2011
2

Small-signal equivalent circuit
for the gate current

Note new choice of independent variables
Body current

Based on Tsividis/McAndrew; Copyright Oxford University Press, 2011
3
Based on Tsividis/McAndrew; Copyright Oxford University Press, 2011
4
Small-signal equivalent circuit for the gate and body currents.

Problem: If the above equations are represented directly by a
three-resistor equivalent circuit,

will interfere with

.
The difference between the currents in these two conductances
can be taken into account by including a controlled source (see book):

Based on Tsividis/McAndrew; Copyright Oxford University Press, 2011
5
Complete very-low-frequency small-signal equivalent circuit

No interference exists between elements.