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i g Objective Questions 3

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Electrical Engineering Objective Questions

1 . Circulating current protection scheme


used in
a) busbar
b) Transformer
c) Feeder
d) None of the above
2. Time -graded protection scheme used in
a) busbar
b) Transformer
c) Feeder
d) Transmission line

1 0. FET is a
a) Bipolar device
b) Current controlled device
c)Three terminal semiconductor device
d) none of the above

11 . Zener diode is a
a) Voltage regulator diode
b) Breakdown diode
3. Carrier current protection scheme used in c) Current regulator diode
d) a and b are correct
a) Busbar
b) Transformer
c) Feeder
d) Reactor
1 2. Epitaxial growth method used in
a) IC Fabrication b) MOSFET Fabrication
4. FET is a
c) BJT Fabrication d) None of the above
a) Bipolar device b) Unipolar device
c) Curent Controlled device
d) None of the above
5. BJT is a
a) Unipolar device b) Voltage controlled device
c) Bipolar device d) None of the above
6. Current carrier holes are electrons for
a) N Channel JFET
b) P ChannelJFET
c) a & b are correct
d) None of the above
7. In Enhancement mode the MOSFET
operates when
a) Gate voltage is negative
b) Drain voltage is negative
c) Source Voltage is positive
d) Gate voltage is positive
8. MOSFET operates in
a) only in enhancement method
b) only in depletion method
c) a and b are correct
d) None of the above

1 -a
8-c

2-c
9-b

3-c
1 0-c

4-b
11 -d

5-c
1 2-a

6-a

7-d

9. Power MOSFET is a
a) Current controlled device
b) Voltage controlled device
c) a & b are correct
d) none of the above

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