2.

1 Semiconductor Physics

In the problems assume the parameter given in eV and material B has a bandgap energy of 1.2 eV.
following table. Use the temperature T = 300 K unless The ratio of intrinsic concentration of material A to
otherwise stated. that of material B is
(A) 2016 (B) 47.5
Property Si Ga As Ge (C) 58.23 (D) 1048
Bandgap Energy 1.12 1.42 0.66
4. In silicon at T = 300 K the thermal-equilibrium
Dielectric Constant 11.7 13.1 16.0 concentration of electron is n0 = 5 ´ 10 4 cm -3. The hole
Effective density of concentration is
states in conduction 2.8 ´ 10 19
4.7 ´ 10 17
1.04 ´ 10 19
(A) 4.5 ´ 1015 cm -3 (B) 4.5 ´ 1015 m -3
band Nc (cm-3)
(C) 0.3 ´ 10 -6 cm -3 (D) 0.3 ´ 10 -6 m -3
Effective density of
states in valence 1.04 ´ 1019 7.0 ´ 1018 6.0 ´ 1018 5. In silicon at T = 300 K if the Fermi energy is 0.22 eV
band Nv (cm-3)
above the valence band energy, the value of p0 is
Intrinsic carrier (A) 2 ´ 1015 cm -3 (B) 1015 cm -3
concertration 1.5 ´ 10 10
1.8 ´ 10 6
2.4 ´ 10 18

ni (cm-3) (C) 3 ´ 1015 cm -3 (D) 4 ´ 1015 cm -3

Mobility 6. The thermal-equilibrium concentration of hole p0 in

Electron 1350 8500 3900
Hole 480 400 1900 silicon at T = 300 K is 1015 cm -3. The value of n0 is
(A) 3.8 ´ 108 cm -3 (B) 4.4 ´ 10 4 cm -3
(C) 2.6 ´ 10 4 cm -3 (D) 4.3 ´ 108 cm -3

7. In germanium semiconductor at T = 300 K, the

1. In germanium semiconductor material at T = 400 K
acceptor concentrations is N a = 1013 cm -3 and donor
the intrinsic concentration is
concentration is N d = 0. The thermal equilibrium
(A) 26.8 ´ 1014 cm -3 (B) 18.4 ´ 1014 cm -3
concentration p0 is
(C) 8.5 ´ 1014 cm -3 (D) 3.6 ´ 1014 cm -3
(A) 2.97 ´ 10 9 cm -3 (B) 2.68 ´ 1012 cm -3
2. The intrinsic carrier concentration in silicon is to be (C) 2.95 ´ 1013 cm -3 (D) 2.4 cm -3
no greater than ni = 1 ´ 1012 cm -3. The maximum
Statement for Q.8-9:
temperature allowed for the silicon is (Assume
E g = 112
. eV) In germanium semiconductor at T = 300 K, the
(A) 300 K (B) 360 K impurity concentration are
(C) 382 K (D) 364 K N d = 5 ´ 1015 cm -3 and N a = 0

3. Two semiconductor material have exactly the same 8. The thermal equilibrium electron concentration n0
properties except that material A has a bandgap of 1.0 is

www.nodia.co.in
108 Semiconductor Physics Chap 2.1

(A) 5 ´ 1015 cm -3 . ´ 1011 cm -3

(B) 115 position of Fermi level with respect to the center of the
. ´ 10 cm
(C) 115 9 -3
(D) 5 ´ 10 cm 6 -3 bandgap is
(A) +0.045 eV (B) - 0.046 eV
9. The thermal equilibrium hole concentration p0 is (C) +0.039 eV (D) - 0.039 eV
. ´ 1013
(A) 396 . ´ 1013 cm -3
(B) 195
(C) 4.36 ´ 1012 cm -3 . ´ 1013 cm -3
(D) 396 16. A silicon sample contains acceptor atoms at a
concentration of N a = 5 ´ 1015 cm -3. Donor atoms are
10. A sample of silicon at T = 300 K is doped with added forming and n - type compensated
boron at a concentration of 2.5 ´ 10 13
cm -3
and with semiconductor such that the Fermi level is 0.215 eV
arsenic at a concentration of 1 ´ 10 13
cm -3. The below the conduction band edge. The concentration of
material is donors atoms added are
. ´ 1013 cm -3
(A) p - type with p0 = 15 . ´ 1016 cm -3
(A) 12 (B) 4.6 ´ 1016 cm -3

. ´ 10 7 cm -3
(B) p - type with p0 = 15 . ´ 1012 cm -3
(C) 39 (D) 2.4 ´ 1012 cm -3

. ´ 1013 cm -3
(C) n - type with n0 = 15 17. A silicon semiconductor sample at T = 300 K is
. ´ 10 7 cm -3
(D) n - type with n0 = 15 doped with phosphorus atoms at a concentrations of
1015 cm -3. The position of the Fermi level with respect
11. In a sample of gallium arsenide at T = 200 K,
to the intrinsic Fermi level is
n0 = 5 p0 and N a = 0. The value of n0 is
(A) 0.3 eV (B) 0.2 eV
(A) 9.86 ´ 10 9 cm -3 (B) 7 cm -3
(C) 0.1 eV (D) 0.4 eV
(C) 4.86 ´ 10 3 cm -3 (D) 3 cm -3
18. A silicon crystal having a cross-sectional area of
12. Germanium at T = 300 K is uniformly doped with
0.001 cm 2 and a length of 20 mm is connected to its
-3
an acceptor concentration of N a = 10 cm and a donor 15
ends to a 20 V battery. At T = 300 K, we want a
concentration of N d = 0. The position of fermi energy
current of 100 mA in crystal. The concentration of
with respect to intrinsic Fermi level is
donor atoms to be added is
(A) 0.02 eV (B) 0.04 eV
(A) 2.4 ´ 1013 cm -3 (B) 4.6 ´ 1013 cm -3
(C) 0.06 eV (D)0.08 eV
(C) 7.8 ´ 1014 cm -3 (D) 8.4 ´ 1014 cm -3

13. In germanium at T = 300 K, the donor

19. The cross sectional area of silicon bar is 100 mm 2 .
-3
concentration are N d = 10 14
cm and N a = 0. The
The length of bar is 1 mm. The bar is doped with
Fermi energy level with respect to intrinsic Fermi
arsenic atoms. The resistance of bar is
level is
(A) 2.58 mW (B) 11.36 kW
(A) 0.04 eV (B) 0.08 eV
(C) 1.36 mW (D) 24.8 kW
(C) 0.42 eV (D) 0.86 eV
20. A thin film resistor is to be made from a GaAs film
14. A GaAs device is doped with a donor concentration doped n - type. The resistor is to have a value of 2 kW.
of 3 ´ 1015 cm -3. For the device to operate properly, the The resistor length is to be 200 mm and area is to be
intrinsic carrier concentration must remain less than 10 -6 cm 2 . The doping efficiency is known to be 90%.
5% of the total concentration. The maximum The mobility of electrons is 8000 cm 2 V - s. The
temperature on that the device may operate is doping needed is
(A) 763 K (B) 942 K (A) 8.7 ´ 1015 cm -3 (B) 8.7 ´ 10 21 cm -3
(C) 486 K (D) 243 K (C) 4.6 ´ 1015 cm -3 (D) 4.6 ´ 10 21 cm -3

15. For a particular semiconductor at T = 300 K 21. A silicon sample doped n - type at 1018 cm -3 have a
-3
E g = 15
. eV, m = 10 m
*
p
*
n and ni = 1 ´ 10 15
cm . The resistance of 10 W . The sample has an area of 10 -6

www.nodia.co.in
Chap 2.1 Semiconductor Physics 109

cm 2 and a length of 10 mm . The doping efficiency of 27. For a sample of GaAs scattering time is t sc = 10 -13 s
the sample is (m n = 800 cm 2 V - s) and electron’s effective mass is me* = 0.067 mo . If an
(A) 43.2% (B) 78.1% electric field of 1 kV cm is applied, the drift velocity

(C) 96.3% (D) 54.3% produced is

(A) 2.6 ´ 106 cm s (B) 263 cm s
22. Six volts is applied across a 2 cm long (C) 14.8 ´ 10 6
cm s (D) 482
semiconductor bar. The average drift velocity is 10 4
cm s. The electron mobility is 28. A gallium arsenide semiconductor at T = 300 K is
(A) 4396 cm V - s 2
(B) 3 ´ 10 cm V - s
4 2
doped with impurity concentration N d = 1016 cm -3. The
(C) 6 ´ 10 4 cm 2 V - s (D) 3333 cm 2 V - s mobility m n is 7500 cm 2 V - s. For an applied field of
10 V cm the drift current density is
23. For a particular semiconductor material following (A) 120 A cm 2 (B) 120 A cm 2
parameters are observed: (C) 12 ´ 10 4 A cm 2 (D) 12 ´ 10 4 A cm 2
m n = 1000 cm 2 V - s ,
29. In a particular semiconductor the donor impurity
m p = 600 cm 2 V - s , concentration is N d = 1014 cm -3. Assume the following
N c = N v = 1019 cm -3 parameters,

These parameters are independent of m n = 1000 cm 2 V - s,

temperature. The measured conductivity of the 32
æ T ö
intrinsic material is s = 10 (W - cm) -6 -1
at T = 300 K. N c = 2 ´ 1019ç ÷ cm -3,
è 300 ø
The conductivity at T = 500 K is
32

(A) 2 ´ 10 -4 (W - cm) -1 (B) 4 ´ 10 -5 (W - cm) -1 æ T ö

N v = 1 ´ 1019ç ÷ cm -3,
è 300 ø
(C) 2 ´ 10 -5 (W - cm) -1 (D) 6 ´ 10 -3 (W - cm) -1
E g = 11
. eV.
24. An n - type silicon sample has a resistivity of 5
An electric field of E = 10 V cm is applied. The
W - cm at T = 300 K. The mobility is m n = 1350
electric current density at 300 K is
cm 2 V - s. The donor impurity concentration is
(A) 2.3 A cm 2 (B) 1.6 A cm 2
(A) 2.86 ´ 10 -14 cm -3 (B) 9.25 ´ 1014 cm -3
(C) 9.6 A cm 2 (D) 3.4 A cm 2
-3 -15 -3
(C) 11.46 ´ 10 cm 15
. ´ 10
(D) 11 cm
Statement for Q.30-31:
25. In a silicon sample the electron concentration
A semiconductor has following parameter
drops linearly from 1018 cm -3 to 1016 cm -3 over a length
of 2.0 mm. The current density due to the electron m n = 7500 cm 2 V - s,
diffusion current is ( Dn = 35 cm 2 s). m p = 300 cm 2 V - s,
(A) 9.3 ´ 10 A cm
4 2
(B) 2.8 ´ 10 A cm 4 2
ni = 3.6 ´ 1012 cm -3
(C) 9.3 ´ 10 9A cm 2 (D) 2.8 ´ 10 9 A cm 2
30. When conductivity is minimum, the hole
26. In a GaAs sample the electrons are moving under concentration is
an electric field of 5 kV cm and the carrier (A) 7.2 ´ 1011 cm -3 (B) 1.8 ´ 1013 cm -3
16 -3
concentration is uniform at 10 cm . The electron
(C) 1.44 ´ 1011 cm -3 (D) 9 ´ 1013 cm -3
7
velocity is the saturated velocity of 10 cm s. The drift
current density is 31. The minimum conductivity is
(A) 1.6 ´ 10 A cm
4 2
(B) 2.4 ´ 10 A cm 4 2
(A) 0.6 ´ 10 -3 (W - cm) -1 . ´ 10 -3 (W - cm) -1
(B) 17
(C) 1.6 ´ 108 A cm 2 (D) 2.4 ´ 108 A cm 2 (C) 2.4 ´ 10 -3 (W - cm) -1 (D) 6.8 ´ 10 -3 (W - cm) -1

www.nodia.co.in
110 Semiconductor Physics Chap 2.1

32. A particular intrinsic semiconductor has a æ -x ö

ç ÷
ç Lp ÷
Hole concentration p0 = 1015 e è ø
cm -3,x ³ 0
resistivity of 50 (W - cm) at T = 300 K and 5 (W - cm) at
T = 330 K. If change in mobility with temperature is æ -x ö
ç ÷

neglected, the bandgap energy of the semiconductor is Electron concentration n0 = 5 ´ 1014 e è L n ø cm -3,x £ 0

(A) 1.9 eV (B) 1.3 eV Hole diffusion coefficient Dp = 10 cm 2 s

(C) 2.6 eV (D) 0.64 eV
Electron diffusion coefficients Dn = 25 cm 2 s

33. Three scattering mechanism exist in a Hole diffusion length Lp = 5 ´ 10 -4 cm,

semiconductor. If only the first mechanism were Electron diffusion length Ln = 10 -3 cm
present, the mobility would be 500 cm V - s. If only 2

The total current density at x = 0 is

the second mechanism were present, the mobility
(A) 1.2 A cm 2 (B) 5.2 A cm 2
would be 750 cm 2 V - s. If only third mechanism were
present, the mobility would be 1500 cm 2 V - s. The net (C) 3.8 A cm 2 (D) 2 A cm 2
mobility is
37. A germanium Hall device is doped with 5 ´ 1015
(A) 2750 cm 2 V - s (B) 1114 cm 2 V - s
donor atoms per cm 3 at T = 300 K. The device has the
(C) 818 cm 2 V - s (D) 250 cm 2 V - s
geometry d = 5 ´ 10 -3 cm, W = 2 ´ 10 -2 cm and L = 0.1
34. In a sample of silicon at T = 300 K, the electron cm. The current is I x = 250 mA, the applied voltage is
concentration varies linearly with distance, as shown Vx = 100 mV, and the magnetic flux is Bz = 5 ´ 10 -2
in fig. P2.1.34. The diffusion current density is found tesla. The Hall voltage is
to be J n = 0.19 A cm . If the electron diffusion
2 (A) -0.31mV (B) 0.31 mV
coefficient is Dn = 25 cm s, The electron concentration
2
(C) 3.26 mV (D) -3.26 mV
at is
Statement for Q.38-39:
5´10 14
A silicon Hall device at T = 300 K has the
geometry d = 10 -3 cm , W = 10 -2 cm, L = 10 -1 cm. The
n(cm-3)

following parameters are measured: I x = 0.75 mA,

n(0) Vx = 15 V, V H = +5.8 mV, tesla
0 0.010
x(cm)
38. The majority carrier concentration is
Fig. P2.1.34
(A) 8 ´ 1015 cm -3, n - type
-3 -3
(A) 4.86 ´ 10 cm8
(B) 2.5 ´ 10 cm
13
(B) 8 ´ 1015 cm -3, p - type
(C) 9.8 ´ 10 26 cm -3 (D) 5.4 ´ 1015 cm -3 (C) 4 ´ 1015 cm -3, n - type
(D) 4 ´ 1015 cm -3, p - type
35. The hole concentration in p - type GaAs is given by

æ xö 39. The majority carrier mobility is

p = 1016 ç 1 - ÷ cm -3 for 0 £ x £ L
è Lø (A) 430 cm 2 V - s (B) 215 cm 2 V - s

where L = 10 mm. The hole diffusion coefficient is (C) 390 cm 2 V - s (D) 195 cm 2 V - s
10 cm 2 s. The hole diffusion current density at
40. In a semiconductor n0 = 1015 cm -3 and ni = 1010
x = 5 mm is
cm -3. The excess-carrier life time is 10 -6 s. The excess
(A) 20 A cm 2 (B) 16 A cm 2
hole concentration is dp = 4 ´ 1013 cm -3. The
(C) 24 A cm 2 (D) 30 A cm 2
electron-hole recombination rate is
(A) 4 ´ 1019 cm -3s -1 (B) 4 ´ 1014 cm -3s -1
36. For a particular semiconductor sample consider
following parameters: (C) 4 ´ 10 24 cm -3s -1 (D) 4 ´ 1011 cm -3s -1

www.nodia.co.in
Chap 2.1 Semiconductor Physics 111

41. A semiconductor in thermal equilibrium, has a

hole concentration of p0 = 1016 cm -3 and an intrinsic
Solutions
concentration of ni = 1010 cm -3. The minority carrier æ -Eg ö
-ç
ç kT ÷÷
life time is 4 ´ 10 -7s. The thermal equilibrium 1. (D) n = N c N v e
2
i
è ø

recombination rate of electrons is

æ 400 ö
Vt = 0.0259ç ÷ = 0.0345
(A) 2.5 ´ 10 22 cm -3 s -1 (B) 5 ´ 1010 cm -3 s -1 è 300 ø
(C) 2.5 ´ 1010 cm -3 s -1 (D) 5 ´ 10 22 cm -3 s -1 For Ge at 300 K,
. ´ 1019, N v = 6.0 ´ 1018 , E g = 0.66 eV
N c = 104
Statement for Q.42-43:
3 æ 0 .66 ö
A n-type silicon sample contains a donor æ 400 ö -ç ÷
ni2 = 104
. ´ 1019 ´ 6.0 ´ 1018 ´ ç ÷ ´e è
0 .0345 ø

concentration of N d = 106 cm -3. The minority carrier è 300 ø

hole lifetime is t p 0 = 10 m s. Þ ni = 8.5 ´ 1014 cm -3

42. The thermal equilibrium generation rate of hole is æ -Eg ö

-ç
ç kT ÷÷

(A) 5 ´ 108 cm -3 s -1 (B) 10 4 cm -3 s -1 2. (C) n = N c N v e

2
i
è ø

3 æ 1 .12 e ö
(C) 2. 25 ´ 10 9 cm -3 s -1 (D) 10 3 cm -3 s -1 æ T ö - çè ÷
(1012 ) 2 = 2.8 ´ 1019 ´ 104
. ´ 1019ç ÷ e
kT ø

è 300 ø
43. The thermal equilibrium generation rate for -13´10 3

electron is
3
T e T
= 9.28 ´ 10 -8 , By trial T = 382 K
(A) 1125
. ´ 10 9 cm -3 s -1 (B) 2.25 ´ 10 9 cm -3 s -1
E gA
- æ E gA - E gB ö
(C) 8.9 ´ 10 -10 cm -3 s -1 (D) 4 ´ 10 9 cm -3 s -1 n2 e kT -ç
ç kT
÷÷
niA
3. (B) iA
2
= E gB = e è ø
= 2257.5 Þ = 47.5
niB - niB
44. A n -type silicon sample contains a donor e kT

concentration of N d = 1016 cm -3. The minority carrier

. ´ 1010 ) 2
ni2 (15
hole lifetime is t p 0 = 20 m s. The lifetime of the majority 4. (A) p0 = = = 4.5 ´ 1015 cm -3
n0 5 ´ 10 4
. ´ 1010 cm -3)
carrier is ( ni = 15
(A) 8.9 ´ 106 s (B) 8.9 ´ 10 -6 s -
( EF - Ev ) -0 .22

-17 -7
5. (A) p0 = N v e kT
. ´ 1019 e 0 .0259 = 2 ´ 1015 cm -3
= 104
(C) 4.5 ´ 10 s . ´ 10
(D) 113 s
( EF - Ev )
45. In a silicon semiconductor material the doping
- æN ö
6. (B) p0 = N v e kT
Þ EF - Ev = kT ln ç v ÷
concentration are N a = 1016 cm -3 and N a = 0. The è p0 ø
equilibrium recombination rate is Rp 0 = 1011 cm -3s -1 . A . ´ 1019 cm -3
At 300 K, N v = 10
uniform generation rate produces an excess- carrier æ 104
. ´ 1019 ö
EF - Ev = 0.0259 lnç ÷ = 0. 239 eV
concentration of dn = dp = 1014 cm -3. The factor, by è 1015 ø
which the total recombination rate increase is ( Ec - EF )

n0 = N c e kT
(A) 2.3 ´ 1013 (B) 4.4 ´ 1013
At 300 K, N c = 2.8 ´ 1019 cm -3
(C) 2.3 ´ 10 9 (D) 4.4 ´ 10 9
Ec - EF = 112
. - 0. 239 = 0.881 eV
n0 = 4.4 ´ 10 4 cm -3
***********
2
Na - Nd æ N ö
7. (C) p0 = + ç N a - d ÷ + ni2
2 è 2 ø

For Ge ni = 2.4 ´ 10 3
2
1013 æ 1013 ö
p0 = + ç ÷ + (2.4 ´ 1013) 2 = 2.95 ´ 1013 cm -3
2 è 2 ø

www.nodia.co.in
112 Semiconductor Physics Chap 2.1

2 2
Nd - Na æ N ö 1014 æ 1014 ö
8. (A) n0 = + ç N d - a ÷ + ni2 n0 = + ç ÷ + (2.4 ´ 1013) 2 = 1055
. ´ 1014 cm -3
2 è 2 ø 2 è 2 ø

5 ´ 1015 æ 5 ´ 1015 ö
2
æn ö æ 1055
. ´ 1014 ö
= + ç ÷ + (2.4 ´ 1013) 2 = 5 ´ 1015 cm -3 EF - EFi = kT ln ç 0 ÷ = 0.0259 ln ç ÷
è 2.4 ´ 10 ø
13
2 è 2 ø è ni ø
= 0.0383 eV
n2 (2.4 ´ 1013) 2
9. (B) p0 = i = . ´ 1013 cm -3
= 195
2.95 ´ 1013
2
p0 Nd æN ö
14. (A) n0 = + ç d ÷ + ni2
2 è 2 ø
10. (A) Since N a > N d , thus material is p-type , ni = 0.05 n0
-3
p0 = N a - N d = 2.5 ´ 10 - 1 ´ 10 = 15
. ´ 10 cm
3 3 13
Þ n0 = 15
. ´ 1015 + (15
. ´ 1015) 2 + (0.05 n0 ) 2
Þ n0 = 30075
. ´ 1015 cm -3
æ 200 ö
11. (D) kT = 0.0259ç ÷ = 0.0173 eV ni = 1504
. ´ 1014 cm -3
è 300 ø
æ -Eg ö
-ç
ç kT ÷÷
For GaAs at 300 K, n = Nc Nv e
2 è ø
i
N c = 4.7 ´ 1017 cm -3, N v = 7.0 ´ 1018 , E g = 1.42 eV
For GaAs at T = 300 K,
3 æ 1 .42 ö
æ 200 ö - çè 0 .0173 ÷ø N c = 4.7 ´ 1017, N v = 7 ´ 1018 , E g = 1.42 eV
ni2 = 4.7 ´ 1017 ´ 7.0 ´ 1018 ç ÷ e
è 300 ø 3 æ 1 .42 ´300 ö
æ T ö - çè 0 .0259T ÷ø
(1504
. ) 2 = 4.7 ´ 1017 ´ 7 ´ 1018 ç ÷ e
Þ ni = 1.48 cm -3 è 300 ø
n02 By trial and error T = 763 K
ni2 = n0 p0 = 5 p02 =
5
n0 = 5 ni = 3.3 cm -3 3 æ mp* ö
15. (A) EFi - Emidgap = kT ln ç * ÷ = 0.0446 eV
4 çm ÷
è pø
æ 400 ö
12. (A) kT = 0.0259ç ÷ = 0.0345 eV Ec - EF ö
è 300 ø - æç ÷
16. (A) n0 = N d - N a = N c e è kT ø
æ -Eg ö
-ç
ç kT ÷÷
ni2 = N c N v e è ø
For Si, N c = 2.8 ´ 1019 cm -3
0 .215 ö
- æç ÷
For Ge at 300 K, N d = 5 ´ 1015 + 2.8 ´ 1019 e è 0 .0259 ø
. ´ 1016 cm -3
= 119
-3 -3
N c = 104
. ´ 10 cm 19
, N v = 6 ´ 10 18
cm , E g = 0.66 eV
æ 400 ö
3
- æç
0 .66 ö
÷ æN ö
ni2 = 104
. ´ 1019 ´ 6 ´ 1018 ç ÷ e è 0 .0345 ø
= 7. 274 ´ 10 29 17. (A) EF - EFi = kT ln ç d ÷
è 300 ø è Ni ø
ni = 8.528 ´ 1014 cm -3 æ 1015 ö
= 0.0259 ln ç ÷ = 0.287 eV
2 . ´ 1010 ø
è 15
Na æN ö
p0 = + ç a ÷ + ni2
2 è 2 ø
V 20
2
18. (D) R = = = 200 W
1015
æ 10 ö 15 I 100m
= + ç ÷ + 7. 274 ´ 10 29
2 è 2 ø L 2 ´ 10 -3
s= = = 0.01( W - cm) -1
RA (200) (0.001)
Þ p0 = 1.489 ´ 1015 cm -3
s » em n n0 , For Si, m n = 1350.
æ p ö æ 1.489 ´ 1015 ö
EFi - EF = kT ln ç 0 ÷ = 0.0345 ln ç ÷ Þ 0.01 = (1.6 ´ 10 -19)(1350)n0
è 8.528 ´ 10 ø
14
è n0 ø
n0 = 4.6 ´ 1013 cm -3,
= 0.019 eV
n0 >> ni Þ n0 = N d
2
Nd æN ö 19. (B) N d >> ni Þ n0 = N d , s » e m n n0 ,
13. (A) n0 = + ç d ÷ + ni2
2 è 2 ø L L
R= = ,
For Ge at T = 300 K, ni = 2.4 ´ 1013 cm -3 s A em n N d A

www.nodia.co.in
Chap 2.1 Semiconductor Physics 113

=
0.1
= 11.36 kW 26. (A) J = evn = (1.6 ´ 10 -19)(10 7)(1016 ) = 1.6 A cm 2
-19
(1.6 ´ 10 )(1100)(5 ´ 1016 )(100 ´ 10 -8 )
et sc E (1.6 ´ 10 -19)(10 -13)(10 5)
27. (A) vd = =
L L me* (0.067)(9.1 ´ 10 -31 )
20. (A) R = , s » e m n n0 , R=
sA em n n0 A
= 26.2 ´ 10 3 m s = 2.6 ´ 106 cm s
L
Þ n0 =
em n AR 28. (A) N d >> ni Þ n0 = N d
n0 = 0.9 N d J = em n n0 E = (1.6 ´ 10 -19
)(7500)(1016 )(10) = 120 A cm 2
-4
20 ´ 10
= = 8.7 ´ 1015 cm -3 æ -Eg ö
(0.9)(1.6 ´ 10 )( 8000)(10 -6 )(2 ´ 10 3)
-19
-ç
ç kT ÷÷
29. (D) n = N c N v e
2
i
è ø

1 .1 ö
L L - æç ÷
21. (B) s » e m n n0 , R = , n0 = = (2 ´ 1019)(1 ´ 1019) e è 0 .0259 ø
= 7.18 ´ 1019
sA em n AR
10 ´ 10 -4 Þ ni = 8.47 ´ 10 9 cm -3
= = 7.81 ´ 1017 cm -3
(1.6 ´ 10 )( 800)(10 -6 )(10)
-19 N d >> ni Þ N d = n0
n0 7.8 ´ 10 17 J = sE = em n n0 E
Efficiency = ´ 100 = ´ 100 = 78.1 %
Nd 1018 = (1.6 ´ 10 -19)(1000)(1014 )(100) = 1.6 A cm 2

V 6 ni2
22. (D) E = = = 3 V/cm, vd = m n E, 30. (A) s = em n n0 + em p p0 and n0 =
L 2 p0
vd 10 4 ni2
mn = = = 3333 cm 2 V - s Þ s = em n + em p p0 ,
E 3 p0
ds ( -1) em n ni2
=0 = + em p
23. (D) s1 = eni (m n + m p ) dp0 p02
10 -6 = (1.6 ´ 10 -19)(1000 + 600)ni
1 1
æm ö2
÷ = 3.6 ´ 1012 æç 7500 ö÷
2
At T = 300 K, ni = 391
. ´ 10 cm 9 -3 Þ p0 = ni ç n
çm ÷ è 300 ø
æ Eg ö
è p ø
-ç
ç kT ÷÷ æN N ö
ni2 = N c N v e è ø
Þ E g = kT ln ç c 2 v ÷ = 7. 2 ´ 1011 cm -3
è ni ø
æ 1019 ö 2 s i m pm n
Þ E g = 2(0.0259) ln ç ÷ = 1122
. eV 31. (B) smin = = 2 en i m pm n
è 391
. ´ 10 9
ø mp + mn
æ 500 ö = 2 ´ 1.6 ´ 10 -19( 3.6 ´ 1012 ) (7500)( 300)
At T = 500 K , kT = 0.0259ç ÷ = 0.0432 eV,
è 300 ø
. ´ 10 -3(W - cm) -1
= 17
1 .122 ö
- æç ÷
ni2 = (1019) 2 e è 0 .0432 ø
cm -3,
1
32. (B) s = = emni ,
Þ ni = 2.29 ´ 1013 cm -3 r
= (1.6 ´ 10 -19)(2.29 ´ 1013)(1000 + 600) 1 Eg
-
-3
= 5.86 ´ 10 (W - cm) -1
r1 n e 2 kT1
= i1 = Eg
1 ni 2 -
2 kT2
1 1 r2 e
24. (B) r = =
s em n N d -
Eg æ 1
-
1 ö
ç ÷

1 1 0.1 = e 2 k è T1 T2 ø

Nd = = = 9.25 ´ 1014 cm -3
re m n 5(1.6 ´ 10 -19)(1350) E g æ 330 - 300 ö
ç ÷ = ln 10
2 k è 330 ´ 300 ø
dn
25. (B) J n = eDn E g = 22( k300) ln 10 = 1.31 eV
dx
æ 1018 - 1016 ö 1 1 1 1
= (1.6 ´ 10 -19)( 35)ç -4
÷ = 2.8 ´ 10 4 A cm 2 33. (D) = + +
è 2 ´ 10 ø m m1 m 2 m 3

www.nodia.co.in
114 Semiconductor Physics Chap 2.1

1 1 1 1 ni2 (1010 ) 2
= + + Þ m = 250 cm 2 V - s 41. (C) n0 = = = 10 4 cm -3
m 500 750 1500 p0 1016
n0 10 4
dn Rn 0 = = = 2.5 ´ 1010 cm -3s -1
34. (B) J n = eDn t n 0 4 ´ 10 -7
dx
æ 5 ´ 1014 - n(0) ö n2
0.19 = (1.6 ´ 10 -19)(25)ç ÷, 42. (C) Rn 0 =
p0
, p0 = i , n0 = N d = 106 cm -3
è 0.010 ø tp 0 n0
n(0) = 2.5 ´ 1013 cm -3 . ´ 1010 ) 2
(15
p0 = = 2.25 ´ 10 4 cm -3
16
1016
dp d æ 16 æ x ö ö e10 Dp
35. (B) J = -eDp = - eDp ç 10 ç 1 - ÷ ÷ = 2.25 ´ 10 4
dx dx è è L øø L Rn 0 = = 2.25 ´ 10 9 cm -3s -1
10 ´ 10 -6
(1.6 ´ 10 -19)(1016 )(10)
=
10 ´ 10 -4 43. (B) Recombination rate for minority and majority
J = 16 A cm 2 carrier are equal . The generation rate is equal to
Recombination rate.
dp 1015 eDp
36. (B) J p = -eDp 0 = G = Rn 0 = Rp 0 = 2.25 ´ 10 9 cm -3s -1
dx x =0 Lp
dn0 5 ´ 1014 eDn n0 p
J n = e Dn = 44. (A) Recombination rates are equal = 0,
dx Ln tn 0 tp 0
x =0

1015 eDp 5 ´ 1014 eDn N d >> ni

J = Jp + Jn = +
Lp Ln ni2
n0 = N d , p0 =
n0
æ 1015(10) 5 ´ 1014 (25) ö
= 1.6 ´ 10 -19ç -4
+ -3
÷ = 5. 2 A cm 2 n0 n2
è 15 ´ 10 10 ø tn 0 = t p 0 = 02 t p 0
p0 ni
- I x Bz æ 1016 ö
2
37. (A) V H = =ç ÷ ´ 20 ´ 10 -6 = 8.9 ´ 106 s
ned 15
. ´ 1010
è ø
(250 ´ 10 -6 )(5 ´ 10 -2 )
= = -0.313 mV
(5 ´ 10 21 )(1.6 ´ 10 -19)(5 ´ 10 -5) 45. (D) N d >> ni Þ n0 = N d
n 2
. ´ 10 )
(15 10 2

38. (B) V H is positive p-type p0 = i

= = 2. 25 ´ 10 4 cm -3
n0 1016
I x Bz I x Bz
VH = Þ p= p0 p0 2. 25 ´ 10 4
epd eV H d Rp 0 = Þ tp 0 = = = 2. 25 ´ 10 7 s
tp 0 Rp 0 1011
(0.75 ´ 10 -3)(10 -1 )
p= dp 1014
(1.6 ´ 10 -19)(5.8 ´ 10 -3)(10 -5) Rp = = = 4.44 ´ 10 20 cm -3s -1
t p 0 2.25 ´ 10 -7
= 8.08 ´ 10 21 m -3 = 8.08 ´ 1015 cm -3
Rp 4.44 ´ 10 20
= = 4.44 ´ 10 9
Ix L Rp 0 1011
39. (C) up =
epVxWd
(0.75 ´ 10 -3)(10 -3)
= -19
(1.6 ´ 10 )( 8.08 ´ 10 21 )(15)(10 -4 )(10 -5) ***********
. ´ 10 -2 m 2 V - s = 390 cm 2 V - s
m p = 39

40. (A) n-type semiconductor

dp 4 ´ 1013
R= = = 4 ´ 1019 cm -3s -1
tp 0 10 -6

www.nodia.co.in