18
Ai=
0.5mA
100K
1K
.
50
25
0.5
50
50
50
50
19.8
0.5
.
100 ||
1
50
CC Amplifier
20
+9V
20
?
+9V
?
?
?
100K
10K
KVL
9
1K
1K
1
1
1 ||1
0.7
||
1 1 1
1 17.4
.
.
.
100
10
100
100 ||
10
1.44
1.44
AC
100 ||{
0.7
100
1 ||
1
DC
CE
CE+RE
CB
CC
Table 5.6
25
, iC = 0
, iE = 0
vI > VBE
, iC= iB
When VC = VB
Edge of Saturation
IC=(VCC-VB)/RC=(VCC-0.7)/RC= IB
VI = RBIB + VBE
27
If VCB<0 or VBC>0
Transistor enters Saturation
VCE=VBE+VCB
VCEsat= 0.2V
28
In Deep Saturation
0.4V<VBC<0.6V
-0.4V>VCB>-0.6V
0.7V=VBE=0.7V
0.3V>VCE>0.1V
In Deep Saturation:
VCE = VCEsat = 0.2V
IC=ICsat=(VCC-VCEsat)/RC
ICsat= forced IB
The transistor in Deep Saturation is modeled as:
29