Chng 1.

Linh kin bn dn

Ni dung
Linh kin th ng
Cht bn dn
Diode
Transistor lng cc BJT
Transistor hiu ng trng FET

1.1. Linh kin th

ng

Khi nim v phn

loi

Linh kin th ng l linh kin ch tiu th nng lng ch

khng c kh nng sinh ra nng lng.
Quan h gia dng v p trn linh kin th ng l quan h
tuyn tnh
Cc linh kin th ng in hnh bao gm:
in tr (Resistor)
T in (Capacitor)
Cun dy (Coil)
Bin p (Transformer)

in tr (Resistor)
in tr l linh kin in t c bn, n cn tr s lu thng
ca dng in.
Tc dng ca in tr trong mch in l xc nh mc dng
v p.
n v ca in tr l Ohm k hiu l .
Bi s ca thng l Kilo, Mega v Giga
1K = 103 1M = 106 1G = 109 in tr quang

Hnh dng thc t

ca in tr

Nhit tr
4

in tr
quang

in tr (Resistor)
Cc nh sn xut khng sn xut in tr vi mi gi tr m
theo cc gi tr chun c EIA khuyn ngh, gi l tiu chun
E vi cc h chnh l:
E6 sai s 20% 100, 150, 220, 330, 470, 680
E12 sai s 10% 100, 120, 150, 180, 220, 270, 330, 390,
470, 560, 680, 820
E24 sai s 5% 100, 110, 120, 130, 150, 160, 180, 200,
220, 240, 270, 300, 330, 360, 390, 430, 470, 510, 560,
620, 680, 750, 820, 910
E48 sai s 2%
E96 sai s 1%
E128 sai s 0,25%; 0,5%; 0,1% v nh hn na
c gi tr mong mun ngi ta mc in tr theo kiu ni
5
tip, song song hoc kt hp

in tr (Resistor)
in tr c gi tr khng i hoc c th thay i (bin tr)

Bin tr

in tr c gi tr khng
i
Bin tr vi chnh (trimer): l loi c lm ch yu t
carbon, kch thc nh v phi s dng tuoclovit xoay. T
l iu chnh ca loi bin tr ny thng l logarit
6

Cch c thng s in tr
c trc tip khi thn in tr ln (in tr dy qun)
ghi gi tr in tr, cng sut v dung sai.
v d: 22 , 25W, sai s 1%
c gin tip theo quy c ch s v ch ci (in tr dn
b mt) v m mu (in tr carbon hoc in tr film)
tiu chun BS 1852 ca Anh
Quy c 1: ch s cui cng (3 hoc 4) ch h s nhn
ch ci ch n v R (hoc E hoc khng ghi) =
K= 103
M = 106
v tr ch ci ch v tr du thp phn

Cch c thng s in tr
c gin tip theo quy c ch s v ch ci (in tr dn
b mt) v m mu (in tr carbon hoc in tr film)
tiu chun BS 1852 ca Anh
Quy c 2: ch s cui cng ch h s nhn
ch ci ch dung sai :F = 1%; G = 2%; J = 5%; K =
10%
V d:

K hiu

Thng s

220F

22 1%

682J

6,8 K 5%

1K5

1,5 K

153K

15 K
10%
8

Quy c m mu
Mu

Vng
1,2
S thc

Vng 3
H s
nhn

Vng 4
Dung
sai

Vng 5
H s
nhit

en

100

Nu

101

1%

100ppm

102

2%

50ppm

Cam

103 1K

3%

15ppm

Vng

104

4%

25ppm

Lc

105

Lam

106 - 1M

Tm

107

Xm

Trng

Vch mu ca in tr
thuc E12

+ Nu ch c 3 vng mu
th sai s mc nh l 20%
9

+ Nu 6 vng mu th 3
vng u ch s thc

ng dng ca in tr
ng vai tr l phn t hn dng, trnh cho cc
linh kin b ph hng do cng dng qu ln
c s dng ch to cc dng c sinh hot
(bn l, bp in hay bng n,) hoc cc thit b
cng nghip (thit b sy, si,)
Xc nh hng s thi gian: Trong mt s mch to
xung
Phi hp tr khng
c s dng trong cc mch phn p phn cc
cho cc linh kin in t

T in
T in l linh kin th ng dng np v
phng in tch (c kh nng tch v phng nng
lng). N chn dng mt chiu nhng li cho
dng xoay chiu i qua.
K hiu v hnh dng thc t

K hiu v hnh dng thc t

ca mt s loi t in

11

T in
Cu to ca t in gm 2 tm dn in c cch in vi

nhau bng mt lp in mi.

Khi in dung ca t c tnh bng cng thc:
trong : l hng s in mi
S l tit din hiu dng ca
bn cc t
d l
bn cc
n v tnh
khong
ln cacch
in gia
dunghai
l Fara
tnhng trn thc t y l gi tr rt ln
nn ngi ta thng dng c s ca
Fara l:
MicroFara: 1F = 10-6 F
NanoFara: 1nF = 10-9 F
PicoFara:
1pF = 10-12 F
12

Bn cc

Cht in
mi

in tch

Cch c thng s trn thn

t
c trc tip: p dng cho t ha. Kch thc ln ghi
y cc thng s: in dung, in p lm vic, di nhit
.

c theo quy c v ch s v ch ci: p dng cho t a

gm hoc mica
n v tnh bng pF
V d: 150000pF = 150 nF
13

Cch c thng s trn thn

t
Cch c thng s trn thn t (gn ging in tr)
M mu: p dng cho t film gm

0
1

H s
nhn
D
x1
x10

Dung
sai khi
>10pF
20%
1%

x100

2%

x1000

3%

Mu

S
A

S
B

en
Nu

0
1

Cam

Dung
H s in p
sai khi
nhit lm vic
<10pF
TC
V
2.0pF

-6
0.1pF -33x10

-75x10-6
250v
0.25pF

150x10
6

Vng

Lc

x10k

x100k

+100%,
-0%
5%

220x10-

400v

0.5pF 330x10-

100v

Lam

x1m

470x10-

630v

14

Tm

750x10-

ng dng ca t in
T ghp tng: Cch ly thnh phn 1 chiu gia
cc tng khuch i, m bo iu kin hot ng
c lp gia cc tng trong ch 1 chiu
T thot: Loi b tn hiu khng hu ch xung t
T lc: c s dng trong cc mch lc
T cng hng: Dng trong cc mch cng hng
LC (mch cng hng ni tip hoc song song)

Cun cm
Cun cm (hay cun dy) l linh kin in t c th
lu tr nng lng t trng khi cho dng in qua.
Kh nng ny ca cun cm c o bng t cm
(L) ca n, n v l Henry (H).

K hiu v hnh dng thc t ca cc loi cun cm

16

ng dng ca cun cm
Cun cng hng: Cun
cm cng t in to
thnh mch cng hng
ni tip hoc song song
Cun chn cao tn (RF
choke)
Mch lc LC
Rle in t
My pht in

Mch
lc LC
17

RF Choke

Quan h gia dng v p trn cc

linh kin th ng
Linh kin
in tr
in tr
T in
T in

Dng in

Cun cm
Cun cm

18

in p

1.2. Cht bn
dn

Cu trc nguyn t
Cc phn t c cu to nn bi cc
nguyn t
M hnh Bohr:
Nguyn t c cu trc hnh tinh
Nguyn t gm ht nhn v cc
electron chuyn ng xung quanh
ht nhn theo qu o hnh trn
hoc hnh bu dc
Mi qu o c 1 mc nng lng
xc nh
Cc electron cng gn ht nhn th
c mc nng lng cng nh
Cc electron xa ht nhn nht, c
mc nng lng cao nht c gi l
cc electron ha tr, d dng bt ra
khi lc ht ca ht nhn tr
thnh elcotron t do

Vng nng lng trong cht

rn

ha tr: Tt c cc mc nng
Vng

lng u b in t chim ch
(vng y)
Vng dn: Cc mc nng lng u
cn trng hoc c th b chim ch 1
phn (vng trng)
Vng cm: Khng tn ti mc nng
lng no in t c th chim
ch
Nng lng vng cm:
Trong : - Nng lng vng cm
- Nng lng vng dn
- Nng lng vng ha tr

Vng
dn

Vng
cm

Vng ha tr

Vng nng lng trong cht

rn
Ty theo v tr tng i ca 3 vng trn, phn chia cht rn

lm

3 loi:
Cht cch in:
Cht bn dn:
Cht dn in:

Cht cch in
C in tr sut ln:
Mt s vt liu cch in c s dng trong k
thut in t: Mica, gm, s, polime, giy cch
in,
Glass = 1012 m mica = 9 x 1013 m
quartz = 5 x
1016 m

Cht dn in
in tr sut nh: 10-8 10-5 m
C nhiu in t t do sn sng tham gia vo qu trnh to
dng
Dng in l dng chuyn di c hng ca cc ht mang
in
to c dng in trong cht rn cn thc hin 2 qu
trnh:
To ht dn
To chuyn ng c hng ca c ht mang in di tc
dng ca in trng

Cht dn in
Vt liu dn in tt nht nhit phng l bc, vng,
nhm, ng, thic Trong , nhm v ng thng c
lm dy dn, chn linh kin, connector, bng mch in .

Cht bn dn
C in tr sut ln hn in
tr sut ca cht dn in
nhng li nh hn ca cht
cch in
C th iu khin gi tr ca
in tr ca bn dn nn c
kh nng thay i c gi tr
ca dng v p trn cc linh
kin bn dn
Mt s cht bn dn thng
dng: Si, Ge, GaAs, GaP, AlAs,
AlP. Trong , Si v Ge c
gi l cht bn dn thun. Cn
cc cht bn dn cn li c
gi l cht bn dn pha tp.

Cht bn dn thun
Si v Ge l 2 cht bn dn in

hnh nht, c 4 in t lp
ngoi cng (Nhm 4 trong bng
tun hon) v l cc cht c cu
trc tinh th.

Cc nguyn t ca Ge(Si) lin

kt vi nhau theo kiu cng ha
tr (cc nguyn t a ra cc
electron ha tr lin kt vi cc
nguyn t xung quanh)
Ti nhit phng, cht bn dn
thun khng phi l mt cht dn
in tt c th tng dn in
bng cch chiu sng hoc t

Lin kt cng ha tr ca Si

Cht bn dn thun
Khi c t nng hoc chiu

sng cung cp nng lng

ln cho cc electron ha tr
nhy t vng ha tr ln vng
dn li 1 l trng vng
ha tr
Cc cp ht dn t do ny di
tc ng ca in trng ngoi
hoc do s chnh lch v nng
chuyn di c hng to
nn dng in
Trong cht bn dn thun: Mt
ca in t v l trng bng
nhau
Phng php hiu qu v n

Cht bn dn pha tp
Cht bn dn pha tp loi N: Pha tp cht nhm V vo cht bn dn
thun. Cht pha tp c gi l tp cht cho (Donor), nng ca
electron t do= nng ca tp cht:
Cht bn dn pha tp loi P: Pha tp cht nhm III vo cht bn dn
thun. Cht pha tp c gi l tp cht nhn (Acceptor), nng ca
l trng t do= nng ca tp cht:

Cht bn dn pha tp loi N

Cht bn dn pha tp
loi P

1.3. Chuyn tip

P_N

Chuyn tip P-N

Cho 2 tinh th bn dn: 1 loi P v 1 loi N tip
xc cng ngh vi nhau, hnh thnh nn chuyn
tip.

Chuyn tip P-N

31

Khng phn cc
in trng tip xc

Min ngho -

Min ngho (ht dn) c in tr ln

32

8/2010

Phn cc thun

Cc dng ni vi cc P cn cc m ni vi
cc N (UAK >0)
Cc dng ca ngun in p ngoi s y l
trng dch chuyn t P
Cc m ca ngun in p ngoi y in t
dch chuyn t N
Dng chuyn di c hng ca cc ht mang
in (l trng v in t) to nn dng in,
c gi l dng thun, t l vi hm s m
ca in p ngoi

33

Phn cc thun

Chuyn tip dn
Chuyn tip cch in
in
34

Chuyn tip phn cc

ngc

Cc dng ngun in p ngoi ni vi N cn

cc m ni vi P
Cc m ngun s ht l trng pha bn P cn
cc dng li ht in t ca bn N.
Kt qu l min ngho m rng hn, khng
c dng in qua chuyn tip v khng c
dng in mch ngoi.

35

Phn phn
cc ngc
Khng
cc

Chuyn tip cch in

36

Diode

Cu to v k hiu
Nguyn tc lm vic ca diode
c tuyn Vn-Ampe ca diode
Phn loi v ng dng

37

Cu to v k hiu

Diode bn dn l linh kin in t gm 1 chuyn tip

P-N
A

Cc ni vi bn dn P gi l cc Anode cn cc ni vi
bn dn N gi l cc Kathode
K hiu

38

Nguyn tc lm vic ca diode

(1)
Diode lm vic da trn tnh cht dn in mt chiu ca
chuyn tip P-N.
Khi c phn cc thun (UAK > 0): diode dn in, trong
mch c dng in chy qua. Khi ny c th coi diode nh
mt kha in t ng (ngn mch) nu UAK > UD

UAK > UD

UAK < UD

39

Nguyn tc lm vic ca diode

(2)
Diode lm vic da trn tnh cht dn in mt chiu ca
chuyn tip P-N.
Khi phn cc ngc (UAK < 0): diode khng dn in, trong
mch ch c dng in ngc rt nh chy qua. Khi ny c
th coi diode nh mt kha in t m (h mch).

40

c tuyn Vn-Ampe ca
diode
Phn thun ca c tuyn (UAK > 0)
UD : in p ngng ca diode.
UD 0,3V (Ge) UD 0,7V (Si)

Ithmax l dng in thun cc i cho php

ca diode
in p ng vi gi tr Ithmax c gi l
Ubh, c gi tr 0,8V ( Ge), 1,2V (Si).
Vng phn cc thun c c trng l dng
ln (mA), in p nh v in tr nh
Phn ngc ca c tuyn (UAK < 0)
Dng ngc bo ha c gi tr rt
nh IS c nA

41

Khi UAK = Udt (in p nh thng) th

dng in ngc tng vt, gi l
hin tng nh thng chuyn tip
P-N
Udt 12V i vi diode tch sng v
khong vi chc V ti 1kV vi diode
nn in.

Phn loi v ng dng

Diode
Diode
Diode
Diode
Diode

chnh lu
n p (Zener)
bin dung (Varicap)
pht quang (LED), thu quang (Photo diode)
xuyn hm (tunnel), cao tn, xung

42

Diode chnh lu (nn in)

K hiu v hnh dng thc t

Cch xc nh cc ca diode: theo k hiu hoc

dng Vn k.
ng dng
Mch chnh lu
Mch hn bin
Mch dch mc
43

Mch chnh lu
Mch chnh lu na chu k

Mch chnh lu c chu k

44

Mch hn bin
Mch hn bin trn

Mch hn bin di

45

Mch dch mc
Lm thay i mc dc (mt chiu) ca tn hiu

46

Diode n p (Zener)
Diode Zene c cu to
tng i c bit ch
n c nng pha tp
cht rt cao, c v bng
thy tinh trong sut v
kch thc kh nh.
Diode Zene lm vic trn on c tuyn ngc, li
dng ch nh thng v in ca chuyn tip PN n nh in p. Ngha l khi b phn cc
ngc v lm vic trong vng nh thng th n
khng b hng nh cc diode khc.
in p nh thng ca diode Zene thng kh nh
(vi chc Vn tr xung) .
47

on c tuyn ngc ca diode Zene

4

0
20
40

60
80
100
120
140

in p st trn
diode gn nh khng
i

Dng in
ngc(mA)

Cc tham s quan trng ca diode n

p
in p n nh UZ
in tr trong Ri
Cng sut nh mc PZ, n l cng sut tiu tn trn diode
khi c dng IZ chy qua
PZ = U Z . I Z
Imin l tr s dng in nh nh ti im m hin tng nh
thng n nh
Imax l tr s dng in cc i qua diode c xc nh bi
cng sut tiu tn cc i diode (nu I > Imax diode s b
chy)

49

Mch n p dng diode Zener

Mch n p c ti

50

Diode bin dung (Varicap)

Gi tr in dung ca diode c tnh bng cng thc:

Trong :
: hng s in mi ca cht bn dn
S: din tch mt ct ngang ca chuyn tip P N
dtx: b dy ca chuyn tip P-N

Cv

S
d tx

Gi tr ca Cv thng rt nh, khong t 2pF n 100pF. iu chnh gi tr ny

ngi ta thay i gi tr ca dtx bng cch iu khin in p ngc t vo diode
51

Diode pht quang (LED)

LED

Khi c phn cc thun s pht ra nh sng

52

Diode thu quang

(photodiode)
RS

Power
supply

VS
Photodiode

Photodiode c phn cc ngc v

dn in khi c nh sng chiu vo
53

Transistor lng cc (BJT)

Cu to, k hiu
Kh nng khuch i
Nguyn tc hot ng
Cc s phn cc v nh im lm vic
CCc s mc c bn
B

!NPN
E

!PNP

B
E

54

Cu to Transistor NPN
N

Min Colect pha tp thp

Min Baz mng
v pha tp thp

C
P

Min Emit pha tp nhiu

N
55

Cu to Transistor PNP
P

Min Colect pha tp thp

Min Baz mng
v pha tp thp

C
N

Min Emit pha tp nhiu

P
56

K hiu Transistor NPN

Collector

C
B E

Base

Emitter
Chiu mi tn ch chiu dng in
qua chuyn tip Emit
57

K hiu Transistor PNP

Collector

C
B E

Base

Emitter
58

Tm tt v cu to ca
Transistor
Transistor c to thnh bi 2 chuyn tip P - N
ghp lin tip
Transistor c 3 cc: cc Colect (gp), cc Baz
(gc) v cc Emit (pht).
Chuyn tip gia Colect v Baz gi l chuyn
tip Colect, k hiu l JC
Chuyn tip gia Emi v Baz gi l chuyn
tip Emit, k hiu l JE
Hu ht cc ht dn pht x t min Emit, qua
min gc Baz v b thu gp ti min Colect
Dng IB c gi tr nh nhng gi vai tr iu
khin
59

Nguyn tc lm vic ca Transistor

Transistor c 2 ch lm vic ty vo trng thi phn

cc ca cc chuyn tip.
1. Transistor lm vic ch khuch i (cn gi
l ch tch cc, iu khin c)
- JE phn cc thun
- JC phn cc ngc
2. Transistor lm vic ch kha in t (khng
iu khin c)
JE v JC phn cc thun (dn bo ha)
JE v JC phn cc ngc (ngt)
60

Kh nng khuch i ca
Transistor

Vo

K =

Khuch i
Ra

Vo
61

Ra

Phn cc Transistor NPN

IC
Dng in trn 3 cc

Hu ht cc ht dn pht
Tip gip JE phnx
cc thun
Emit
vt qua
V JC t
phn
cc ngc
c min Baz do min
Colecto ht

Ch : IB nh hn nhiu
IE v IC.
62

IB
IE

Cc thnh phn dng in ch

tch cc
)

JE c phn cc thun nn cc ht a s trong Emito tng

cng khuch tn sang Baz
Cc ht a s ca Emit phun vo Baz v tr thnh cc ht
thiu s tri. Do chnh lch nng m chng s khuch tn
ti b min in tch khng gian ca chuyn tip J C.
Chuyn tip JC phn cc ngc nn s cun tri cc ht thiu s
sang min Colect.

63

Cc thnh phn dng in ch

tch cc
IE = IC + IB (thng thng IB << IC v IE )
H s truyn t dng in Emito l c
tnh bng cng thc:

Trn thc t dc thng khng khc nhiu

vi
ac v c gi tr gn bng 1 (t 0,9 n
0.998).
64

Cc thnh phn dng in ch

tch cc
H s truyn t dng in Colect : Cn gi l
h s khuych i dng in.
dc - H s khuch i dng in mt chiu

ac

- H s khuch i dng in xoay chiu

c gi tr t vi chc ti vi trm, gi tr
in hnh t 50 150
Mi quan h gia v

65

Cc mch c bn dng BJT

S khi ca mt mch khuch i n gin

66

Cc mch c bn dng BJT

C 3 cch mc c bn
Mch Emitter chung (EC)

Mch Collector chung (CC)

Mch Baz chung (BC)

67

Mch Emitter chung

S mch
Tn hiu in p xoay chiu cn khuch i c a vo gia
cc gc (B) v cc pht (E) . Tn hiu sau khi khuch i c
ly ra gia cc gp (C) v cc pht (E).
S ny c kh nng khuch i c dng v p.
Tn hiu in p ra v in p vo o pha

68

H c tuyn vo/ra mch

EC
H c tuyn vo
H c tuyn ra
I B f (U BE ) U

I C f (U CE ) I

CE const

69

B const

Mch Baz chung (BC)

S mch
Tn hiu xoay chiu c a vo cc Emit. Tn hiu sau khi
khuch i c ly ra gia Colecto v Baz.
c im ca s mc cc pht chung
Tn hiu vo v tn hiu ra ng pha
H s khuch i dng Ki = IC/IE = 0,95 0,99
H s khuch i in p KU

Vcc,
R1

R3

C2
Ur

C1
C3
+

T1

R2

R4

Uv
70

H c tuyn vo/ra mch BC

H c tuyn vo
I E f (U BE ) U

H c tuyn ra
I C f (U CB ) I

CB const

71

E const

Mch Collector chung (CC)

S mch
Tn hiu in p a vo gia cc B v C v ly ra gia
cc E v C.
Tn hiu in p vo v tn hiu in p ra ng pha
H s khuch i in p Ku ~1 in p ra lp li in p
vo cc pht mch CC cn c gi l mch lp cc pht
H s khuch i dng in ln Ki ~

72

PHN CC CHO BJT

Nguyn tc chung
ng ti tnh v im cng tc tnh
Phn cc bng dng IB c nh
Phn cc bng hi tip m in p
Phn cc bng phn p

73

Nguyn tc chung
Phn cc (hay phn p, nh thin) : Cp in p mt chiu
ph hp cho cc cc ca BJT n c th lm vic 1 trong
3 ch (khuch i, thng bo ho, ngt)
Ch khuch i: t in p mt chiu ln cc chn cc
sao cho chuyn tip TE phn cc thun v chuyn tip TC
phn cc ngc
Transistor loi NPN: UE < UB < UC
Transistor loi PNP: UE > UB >UC
Khi tnh ton ch mt chiu trong vng tch cc ta dng cc
cng thc sau:
UBE = 0.7V
IC = IB
IE= IB + IC = ( +1)IB
74

ng ti tnh v im cng tc
tnh
ng ti tnh c v trn
c tuyn ra tnh ca
transitor nghin cu
dng in v in p mt
chiu khi mc trong mt
mch c th no .
im cng tc tnh (hay
im tnh, im phn cc)
l im nm trn ng ti
tnh xc nh dng in v
in p trn transitor khi
khng c tn hiu t vo,
ngha l xc nh iu kin
phn cc cho transitor.
75

iC (mA)

Vcc/Rt

im cng
tc tnh Q

ng ti tnh
Vcc

UCE (V)

ng ti tnh v im cng tc tnh

Chn im cng tc tnh

Giao im ca ng ti tnh
v ng c tuyn ra gi l
im cng tc tnh Q. Vic
chn v tr cho Q c ngha
rt ln i vi ch lm vic
ca transistor.
Khi transistor lm vic ch
khuch i, thng thng
ngi ta chn Q nm gia
ng ti tnh (gia vng tch
cc) tn hiu u ra c th
c bin ln nht m khng
b mo.
76

n nh im cng tc tnh
V tr ca im lm vic tnh rt quan trng trong hot ng ca
BJT
Nguyn nhn dn n s thay i v tr ca im Q:
Nhit thay i
s ho gi ca linh kin theo thi gian hot ng
s khng n nh ca ngun cung cp ...

Trong yu t v nhit l yu t thng xuyn tc ng v c

th hn ch c. Do tnh cht chung ca bn dn l c tnh in
ph thuc vo nhit nn dng in v in p trn transistor
ph thuc rt nhiu vo nhit . Ngha l im lm vic tnh s b
di chuyn khi nhit thay i.
nh hng ca nhit chnh l nh hng ti hai tham s l dng
ngc ICB0 v in p UBE.
UBE bin i khong 2,2mV/0C i vi transistor loi Si v -1,8mV/0C i vi
transistor Ge.
ICB0 tng gp 2 ln khi nhit tng 100C

77

S phn cc c nh (1)
Mch phn cc c nh

VCC l ngun cung cp mt chiu

RB u t dng ngun Vcc v cc gc dn in p dng v cc gc.
RC dn in p t dng ngun Vcc v cc gp.
C1, C2: t ni tng
Dng in IB chy t dng ngun Vcc qua RB , qua BJT v m ngun.
Dng in IC chy t dng ngun Vcc qua RC , qua BJT v m ngun.

78

S phn cc c nh (2)
(xc nh im cng tc tnh Q)

PT Kirchhoff cho vng in p pha u vo ta c phng trnh:

VCC = UBE + RB .IB

IB= (VCC UBE)/RB
Khi lm vic ch khuch i U BE c gi tr rt nh do chuyn tip Emitter
phn cc thun. Nn ta c:

VCC
IB
nn phng
RBphp ny c gi

Ta thy dng IB c gi tr khng i

l
phng php phn cc bng dng IB c nh.
Vit phng trnh Kirchhoff cho vng in p pha u ra:

VCC = UCE + RC .IC phng trnh ng ti tnh

Gi tr dng IC chy qua in tr RC (dng ICQ) c tnh theo cng thc:

VI CC vo phng trnh ng ti tnh.

tm gi tr in p UCEQI ta
thay
gi tr
CQ

.
I

.
CQ
BQ
RB
Vy ta c:
Khi ny im cng tc tnh Q xc nh bng 3 gi tr (IBQ, ICQ, UCEQ)

U CEQ VCC I CQ .RC

79

S phn cc c nh (3)
ng ti tnh v im cng tc tnh
Minh ho trn c tuyn ra
tnh

v ng ti tnh ta cn
xc nh hai im:
Mt im trn trc tung tng
ng vi in UCE =0 v IC =
VCC/RC
Mt im trn trc honh tng
ng vi IC = 0 v UCE = VCC

im cng tc tnh ca
mch l giao ca ng ti
tnh v c tuyn ra
IB = VCC/ RB

80

S phn cc c nh (4)
n nh nhit
Khi nhit thay i, h s thay i lm cho IC thay i (v
IC= IB). Do im lm vic tnh Q (ICQ, UCEQ)s thay i
nhiu theo khi nhit thay i.
I C
1
H s n nh nhit
S

I CBo 1 (I B / I C )
V IB khng i nn c IB = 0. Thay vo cng thc trn c:

S= + 1
Nhn xt
H s n nh nhit S ln do ln
Mun thay i S phi thay i thay i BJT Mch b nh hng ln bi
nhit . Trong thc t ch dng cch phn cc ny khi khng yu cu n
nh nhit cao.

81

Bi tp
Cho s mch sau v h c tuyn ra nh hnh di y

Xc nh im cng tc tnh Q
Minh ho trn th c tuyn ra
Nhn xt v hot ng ca mch
82

p n

S hi tip m in p (1)
S mch

Hi tip m in p l mt phn in p ra c a ngc

tr li u vo sao cho tc dng cu n ngc pha vi in p
vo.
VCC l ngun cung cp mt chiu
RC dn in p t dng ngun VCC v cc gp.
in tr RB khng ni trc tip vi ngun VCC m ni gia cc
83
C v cc B. Ngha l cc B c cp ngun t V C, qua RB.

S hi tip m in p (2)
S ny c n nh nhit tt hn s phn dng c nh
Khi nhit tng dng IC tng ln st p trn RC tng
in p ti cc C l VC gim xung m VB = VC IB.RB do VB
cng gim xung, lm cho gc m UBE nh li, BJT dn yu i,
tc l cc dng qua BJT gim (IC gim chng li s thay i ban
u).
Qu trnh hon ton ngc li khi nhit gim im cng
tc tnh s n nh khi nhit thay i
Nh vy, nh in tr hi tip m RB m im lm vic tnh ca
mch s n nh hn.

84

Phn cc bng phn p (1)

S phn cc bng phn
p

S tng ng
Thevenin

R1, R2 to thnh mch phn p cp in p cho cc B

RC dn in p dng ngun v cc C.
RE l in tr hi tip m dng in, to in p trn cc E tu vo gi tr
dng IE i qua BJT (do vy gi l t phn cc).
Dng in trn RE s to mt st p trn n c xu hng chng li s
phn cc thun ca lp tip xc85 pht n nh nhit cho mch

Phn cc bng phn p (2)

(xc nh im cng tc tnh)

Thay s mch trn bng s tng ng Thevenin vi

cc gi tr tng ng nh sau:

VCC .R2
22.8,2k
UB

2,81(V ) RB R1 // R2 R1.R2 56.8,2 7,15k

R1 R2 56k 8.2k
R1 R2 56 8,2
phng trnh Kirchhoff in p vo nh sau:

U B I B R B U BE ( I B I C ) R E

Phng trnh ng ti tnh nh sau:

VCC I C RC I E RE U CE

T 2 phng trnh ny xc nh c Q tng t nh 2 s

trn
86

Bi tp
Cho s mch sau v h c tuyn ra nh hnh di y

Xc nh cc thnh
phn dng v p
trn cc cc ca
transistor
Xc nh im cng
tc tnh Q
Nhn xt v hot
ng ca mch

87

Ht phn:

Chuyn tip P-N (P-N junction)

Diode
Transistor lng cc (BJT)

Xem tip cc phn sau trong slide tip theo

Transistor trng (FET)

Mt s linh kin khc (UJT,
SCR, Diac, Triac ...)

88

1.4. Linh kin tch

cc