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AP4525GEH

RoHS-compliant Product

Advanced Power
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Electronics Corp.

N AND P-CHANNEL ENHANCEMENT


MODE POWER MOSFET

Simple Drive Requirement

N-CH BVDSS

D1/D2

40V

RDS(ON)

Good Thermal Performance


Fast Switching Performance

S1

28m

ID
G1

S2

15A

P-CH BVDSS

G2

TO-252-4L

Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.

-40V

RDS(ON)

42m

ID

-12A

D1

D2

G1

G2

S1

S2

Absolute Maximum Ratings


Symbol

Parameter

Rating
N-channel

Units

P-channel

VDS

Drain-Source Voltage

40

-40

VGS

Gate-Source Voltage

16

16

ID@TA=25

Continuous Drain Current

15.0

-12.0

ID@TA=70

Continuous Drain Current

12.0

-10.0

50

-50

IDM

Pulsed Drain Current

PD@TA=25

Total Power Dissipation

10.4

Linear Derating Factor

0.083

W/

TSTG

Storage Temperature Range

-55 to 150

TJ

Operating Junction Temperature Range

-55 to 150

Thermal Data
Symbol

Parameter

Value

Unit

Rthj-c

Maximum Thermal Resistance, Junction-case

12

/W

Rthj-a

Maximum Thermal Resistance, Junction-ambient

110

/W

Data and specifications subject to change without notice

1
200809235

AP4525GEH
o

N-CH Electrical Characteristics@ Tj=25 C(unless otherwise specified)


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Symbol

Parameter

Test Conditions

Min.

Typ.

40

0.03

V/

VGS=10V, ID=6A

28

VGS=4.5V, ID=4A

32

BVDSS

Drain-Source Breakdown Voltage

BVDSS/Tj

Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA

RDS(ON)

VGS=0V, ID=250uA

Static Drain-Source On-Resistance

Max. Units

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250uA

gfs

Forward Transconductance

VDS=10V, ID=6A

IDSS

Drain-Source Leakage Current

VDS=40V, VGS=0V

uA

Drain-Source Leakage Current (T j=70 C) VDS=32V, VGS=0V

25

uA

Gate-Source Leakage

VGS=16V

30

uA

ID=6A

14

nC

IGSS

Qg

Total Gate Charge

Qgs

Gate-Source Charge

VDS=20V

1.5

nC

Qgd

Gate-Drain ("Miller") Charge

VGS=4.5V

nC

td(on)

Turn-on Delay Time

VDS=20V

ns

tr

Rise Time

ID=6A

20

ns

td(off)

Turn-off Delay Time

RG=3,VGS=10V

20

ns

tf

Fall Time

RD=3.3

ns

Ciss

Input Capacitance

VGS=0V

580

930

pF

Coss

Output Capacitance

VDS=25V

100

pF

Crss

Reverse Transfer Capacitance

f=1.0MHz

70

pF

Rg

Gate Resistance

f=1.0MHz

Min.

Typ.

IS=15A, VGS=0V

1.8

Source-Drain Diode
Symbol
VSD

Parameter
Forward On Voltage

2
2

Test Conditions

Max. Units

trr

Reverse Recovery Time

IS=6A, VGS=0V

20

ns

Qrr

Reverse Recovery Charge

dI/dt=100A/s

15

nC

AP4525GEH
P-CH Electrical Characteristics@T j=25oC(unless otherwise specified)

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Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown Voltage

-40

BVDSS/Tj

Breakdown Voltage Temperature Coefficient Reference to 25,ID=-1mA

-0.03

V/

RDS(ON)

Static Drain-Source On-Resistance2

VGS=-10V, ID=-5A

42

VGS=-4.5V, ID=-3A

60

-0.8

-2.5

VGS=0V, ID=-250uA

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=-250uA

gfs

Forward Transconductance

VDS=-10V, ID=-5A

IDSS

Drain-Source Leakage Current

VDS=-40V, VGS=0V

-1

uA

Drain-Source Leakage Current (Tj=70 C) VDS=-32V, VGS=0V

-25

uA

Gate-Source Leakage

VGS=16V

30

uA

IGSS

Qg

Total Gate Charge

ID=-5A

24

nC

Qgs

Gate-Source Charge

VDS=-20V

nC

Qgd

Gate-Drain ("Miller") Charge

VGS=-4.5V

nC

td(on)

Turn-on Delay Time

VDS=-20V

8.5

ns

tr

Rise Time

ID=-5A

15

ns

td(off)

Turn-off Delay Time

RG=3,VGS=-10V

27

ns

tf

Fall Time

RD=4

25

ns

Ciss

Input Capacitance

VGS=0V

770

1230

pF

Coss

Output Capacitance

VDS=-20V

165

pF

Crss

Reverse Transfer Capacitance

f=1.0MHz

115

pF

Rg

Gate Resistance

f=1.0MHz

Min.

Typ.

Max.

Units

IS=-12A, VGS=0V

-1.8

Source-Drain Diode
Symbol
VSD

Parameter
2

Forward On Voltage

Test Conditions

trr

Reverse Recovery Time

IS=-5A, VGS=0V

20

ns

Qrr

Reverse Recovery Charge

dI/dt=-100A/s

16

nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.N-CH , P-CH are same .
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.

AP4525GEH
N-Channel
50

50

T A = 25 C

ID , Drain Current (A)

40

10V
7.0V
5.0V
4.5V

T A = 150 C

40

ID , Drain Current (A)

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10V
7.0V
5.0V
4.5V

30

20

V G =3.0V

30

20

V G =3.0V
10

10

0
0

V DS , Drain-to-Source Voltage (V)

V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

120

ID=4A
T A =25 o C

1.6

Normalized RDS(ON)

RDS(ON) (m )

100

ID=6A
V G =10V

80

60

1.2

40

0.8

20
2

25

10

50

75

100

125

150

T j , Junction Temperature ( o C)

V GS , Gate-to-Source Voltage (V)

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance


v.s. Junction Temperature
1.6

14

Normalized VGS(th) (V)

12

10

IS(A)

T j =150 o C

T j =25 o C

1.2

0.8

0.4

0
0

0.2

0.4

0.6

0.8

1.2

1.4

V SD , Source-to-Drain Voltage (V)

Fig 5. Forward Characteristic of

Reverse Diode

1.6

-50

50

100

150

T j , Junction Temperature ( C)

Fig 6. Gate Threshold Voltage v.s.


Junction Temperature
4

AP4525GEH
N-Channel
f=1.0MHz
1000

VGS , Gate to Source Voltage (V)

12

C iss

I D =6A

www.datasheet4u.com V =20V
DS

C (pF)

C oss

100

C rss

10

0
0

10

15

20

Q G , Total Gate Charge (nC)

13

17

21

25

29

V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

ID (A)

10

100us

1ms
10ms
100ms
1s
DC

T A =25 o C
Single Pulse
0.1

Normalized Thermal Response (Rthjc)

100

Duty factor=0.5

0.2

0.1

0.1
0.05

PDM
0.02

t
T

0.01

Duty factor = t/T


Peak Tj = PDM x Rthjc + TC

Single Pulse

0.01
0.1

10

100

0.00001

0.0001

V DS , Drain-to-Source Voltage (V)

0.001

0.01

0.1

t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

50

VG
V DS =5V
ID , Drain Current (A)

40

T j =25 o C

T j =150 o C

QG
4.5V

30

QGS

QGD

20

10

Charge

0
0

V GS , Gate-to-Source Voltage (V)

Fig 11. Transfer Characteristics

Fig 12. Gate Charge Waveform

AP4525GEH
P-Channel
50

50

-10V
-7.0V
-5.0V
-4.5V

-ID , Drain Current (A)

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40

T A = 150 C

40

30

V G = - 3.0V

20

-10V
-7.0V
-5.0V
-4.5V

-ID , Drain Current (A)

T A = 25 C

30

20

V G = - 3.0V

10

10

0
0

-V DS , Drain-to-Source Voltage (V)

-V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1.6

200

I D = -3 A

I D = -5A
V G = -10V

T A =25 o C

170

Normalized RDS(ON)

RDS(ON) (m)

1.4
140

110

80

1.2

1.0

50

0.8

20
2

25

10

-V GS ,Gate-to-Source Voltage (V)

50

75

100

125

150

T j , Junction Temperature ( C)

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance


v.s. Junction Temperature
1.6

12

Normalized -VGS(th) (V)

10

-IS(A)

T j =150 o C

T j =25 o C

1.2

0.8

0.4
0.1

0.3

0.5

0.7

0.9

1.1

1.3

-V SD , Source-to-Drain Voltage (V)

Fig 5. Forward Characteristic of

Reverse Diode

1.5

-50

50

100

150

T j , Junction Temperature ( C)

Fig 6. Gate Threshold Voltage v.s.


Junction Temperature
6

AP4525GEH
P-Channel

-VGS , Gate to Source Voltage (V)

12

f=1.0MHz

10000

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I D = -5 A
V DS = - 2 0 V

1000

C (pF)

C iss

C oss
C rss

100

10
0

12

16

20

Q G , Total Gate Charge (nC)

13

17

21

25

29

-V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

100

Normalized Thermal Response (Rthjc)

Duty factor=0.5

10

-ID (A)

100us

1ms
1

10ms
100ms
1s
DC

T c =25 C
Single Pulse
0.1

0.2

0.1

0.1
0.05

PDM
0.02

t
T

0.01

Duty factor = t/T


Peak Tj = PDM x Rthjc + T C

Single Pulse

0.01
0.1

10

100

0.00001

0.0001

-V DS , Drain-to-Source Voltage (V)

0.001

0.01

0.1

t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

50

VG

V DS =-5V
-ID , Drain Current (A)

40

T j =25 o C

QG

T j =150 o C

30

-4.5V
QGS

QGD

20

10

Charge

0
0

-V GS , Gate-to-Source Voltage (V)

Fig 11. Transfer Characteristics

Fig 12. Gate Charge Waveform

ADVANCED POWER ELECTRONICS CORP.

Package Outline : TO-252(4L)

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Millimeters

SYMBOLS

MIN

NOM

MAX

6.40

6.6

6.80

5.2

5.35

5.50

9.40

9.80

10.20

2.40

2.70

3.00

1.27 REF.

P
S

E3

C
M

R
D

0.50

0.65

0.80

E3

3.50

4.00

4.50

0.80

1.00

1.20

0.40

0.50

0.60

2.20

2.30

2.40

0.45

0.50

0.55

0.00

0.075

0.15

0.90

1.20

1.50

5.40

5.60

5.80

1.All Dimensions Are in Millimeters.

2.Dimension Does Not Include Mold Protrusions.

Part Marking Information & Packing : TO-252(4L)


Part Number
Package Code
meet Rohs requirement

4525GEH

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