Scribd Logo
Unggah

Selamat datang di Scribd!

  • NPN Silcon Transistor C3203

    Diunggah oleh

    leopardo1234
    230 tayangan1 halaman
    This document provides specifications for an NPN silicon transistor with part number C3203. It is intended for high current applications. Key specifications include an absolute maximum collector current of 800mA, collector-emitter breakdown voltage of 30V, and DC current gain ranging from 100-320 depending on collector current and conditions. Electrical characteristics like saturation voltage, cutoff currents, and bandwidth are also listed along with HFE classifications.

    Deskripsi Asli:

    NPN SILCON TRANSISTOR C3203

    Judul Asli

    NPN SILCON TRANSISTOR C3203

    Hak Cipta

    © © All Rights Reserved

    Format Tersedia

    PDF, TXT atau baca online dari Scribd

    Apakah menurut Anda dokumen ini bermanfaat?

    Apakah konten ini tidak pantas?

    Laporkan Dokumen Ini
    This document provides specifications for an NPN silicon transistor with part number C3203. It is intended for high current applications. Key specifications include an absolute maximum collector current of 800mA, collector-emitter breakdown voltage of 30V, and DC current gain ranging from 100-320 depending on collector current and conditions. Electrical characteristics like saturation voltage, cutoff currents, and bandwidth are also listed along with HFE classifications.

    Hak Cipta:

    © All Rights Reserved
    Unduh sebagai PDF, TXT atau baca online dari Scribd
    Tandai sebagai konten tidak pantas
    230 tayangan1 halaman

    NPN Silcon Transistor C3203

    Diunggah oleh

    leopardo1234
    This document provides specifications for an NPN silicon transistor with part number C3203. It is intended for high current applications. Key specifications include an absolute maximum collector current of 800mA, collector-emitter breakdown voltage of 30V, and DC current gain ranging from 100-320 depending on collector current and conditions. Electrical characteristics like saturation voltage, cutoff currents, and bandwidth are also listed along with HFE classifications.

    Hak Cipta:

    © All Rights Reserved
    Unduh sebagai PDF, TXT atau baca online dari Scribd
    Tandai sebagai konten tidak pantas
    dari 1

    NPN S I L I C O N T RA N S I S T O R

    K I SEMICONDUCTOR

    C3203

    APPLICATIONS
    HIGH CURRENT APPLICATIONS.

    ABSOLUTE MAXIMUM RATINGSTa=25

    TO-92

    T stg Storage Temperature -55~150


    T j Junction Temperature150
    PCCollector Dissipation600mW
    1EmitterE
    2CollectorC
    3BaseB

    V CBOCollector-Base Voltage35V
    VCEOCollector-Emitter Voltage30V
    V EBO Emitter-Base Voltage5V
    I C Collector Current800mA

    ELECTRICAL CHARACTERISTICSTa=25
    Symbol

    Characteristics

    Min

    Typ

    Max

    Unit

    Test Conditions

    BVCBO

    Collector-Base Breakdown Voltage

    35

    IC=100A,

    BVCEO

    Collector-Emitter Breakdown Voltage

    30

    IC=10mA,

    BVEBO

    Emitter-Base Breakdown Voltage

    IE=1mAIC=0

    HFE1

    DC Current Gain

    100

    HFE2

    DC Current Gain

    35

    VCE(sat)

    Collector- Emitter Saturation Voltage

    320

    IE=0
    IB=0

    VCE=1V, IC=100mA
    VCE=1V, IC=700mA

    05

    0.5

    IC=500mA, IB=20mA

    0.8

    VCE=1V, IC=10mA

    VBE

    Base-Emitter Voltage

    ICBO

    Collector Cut-off Current

    100

    nA

    VCB=35V, IE=0

    IEBO

    Emitter Cut-off Current

    100

    nA

    VEB=5V, IC=0

    fT
    Cob

    Current Gain-Bandwidth Product

    Output Capacitance

    120
    13

    MHz
    pF

    HFE Classification
    O

    100200

    160320

    VCE=5V, IC=10mA
    VCB=10V, IE=0f=1MHz

    Anda mungkin juga menyukai