Si1433DH

New Product

Vishay Siliconix

P-Channel 30-V (D-S) MOSFET

FEATURES
D TrenchFETr Power MOSFETS: 1.8-V Rated
D Thermally Enhanced SC-70 Package

PRODUCT SUMMARY
VDS (V)

rDS(on) (W)

ID (A)

0.150 @ VGS = - 10 V

- 2.2

0.260 @ VGS = - 4.5 V

- 1.6

APPLICATIONS
D Load Switches
- Notebook PCs
- Servers

- 30

SOT-363
SC-70 (6-LEADS)
D

BE

XX

YY

Marking Code

Lot Traceability
and Date Code

Part # Code
Top View
Ordering Information: Si1433DH-T1

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 secs

Steady State

Drain-Source Voltage

VDS

- 30

Gate-Source Voltage

VGS

"20

Continuous Drain Current (TJ = 150_C)a

TA = 25_C

- 2.2

- 1.9

- 1.7

- 1.4

ID
TA = 85_C

Pulsed Drain Current

IDM

Continuous Diode Current (Diode Conduction)a

IS
TA = 25_C

Maximum Power Dissipationa

Unit

TA = 85_C

Operating Junction and Storage Temperature Range

PD

-8
- 1.4

- 0.9

1.45

0.95

0.75

0.5

TJ, Tstg

W
_C

- 55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol
t v 5 sec

M i
Maximum
JJunction-to-Ambient
ti t A bi ta
Maximum Junction-to-Foot (Drain)

Steady State
Steady State

RthJA
RthJF

Typical

Maximum

65

85

105

130

38

48

Unit

_C/W
C/W

Notes
a. Surface Mounted on 1 x 1 FR4 Board.
Document Number: 72323
S-31668Rev. A, 11-Aug-03

www.vishay.com

Si1433DH
New Product

Vishay Siliconix

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

VGS(th)

VDS = VGS, ID = - 100 mA

-1

Typ

Max

Unit

-3

"100

nA

Static
Gate Threshold Voltage
Gate-Body Leakage

IGSS

Zero Gate Voltage Drain Current

IDSS

On-State Drain Currenta

ID(on)

Drain Source On-State

Drain-Source
On State Resistancea

-1
-5

VDS = - 5 V, VGS = - 4.5 V

mA

-4

A
0.120

0.150

VGS = - 4.5 V, ID = - 1.6 A

0.210

0.260

gfs

VDS = - 10 V, ID = - 2.2 A

VSD

IS = - 1.2 A, VGS = 0 V

- 0.85

- 1.2

3.1

rDS(on)

Voltagea

VDS = - 16 V, VGS = 0 V
VDS = - 16 V, VGS = 0 V, TJ = 85_C

VGS = - 10 V, ID = - 2.2 A

Forward Transconductancea
Diode Forward

VDS = 0 V, VGS = "8 V

W
S
V

Dynamicb
Total Gate Charge

Qg

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

11

17

tr

17

26

18

27

13

20

Rise Time
Turn-Off Delay Time

VDS = - 15 V, VGS = - 4.5 V, ID = - 2.2 A

nC

1.6

VDD = - 15 V, RL = 15 W
ID ^ - 1 A, VGEN = - 10 V, RG = 6 W

td(off)

Fall Time

1.0

tf

ns

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Output Characteristics

Transfer Characteristics

8
TC = - 55_C

VGS = 10 thru 5 V

7
I D - Drain Current (A)

I D - Drain Current (A)

25_C
6
5
4V
4
3
2

6
5
125_C
4
3
2

1
3V

0
0

VDS - Drain-to-Source Voltage (V)

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VGS - Gate-to-Source Voltage (V)

Document Number: 72323

S-31668Rev. A, 11-Aug-03

Si1433DH
New Product

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Capacitance
350

0.60

280
C - Capacitance (pF)

r DS(on)- On-Resistance ( W )

On-Resistance vs. Drain Current

0.75

0.45

0.30
VGS = 4.5 V
VGS = 10 V

0.15

Ciss
210

140
Coss
70
Crss

0.00

0
0

ID - Drain Current (A)

Gate Charge

24

30

On-Resistance vs. Junction Temperature

1.6

VDS = 15 V
ID = 2.2 A

VGS = 10 V
ID = 2.2 A

r DS(on)- On-Resistance ( W )
(Normalized)

V GS - Gate-to-Source Voltage (V)

18

VDS - Drain-to-Source Voltage (V)

10

0
0

1.4

1.2

1.0

0.8

0.6
- 50

- 25

Qg - Total Gate Charge (nC)

Source-Drain Diode Forward Voltage

50

75

100

125

150

On-Resistance vs. Gate-to-Source Voltage

0.70

r DS(on)- On-Resistance ( W )

TJ = 150_C
1

TJ = 25_C

0.56

0.42
ID = 2.2 A
0.28

0.14

0.00

0.1
0.00

25

TJ - Junction Temperature (_C)

10

I S - Source Current (A)

12

0.3

0.6

0.9

1.2

VSD - Source-to-Drain Voltage (V)

Document Number: 72323

S-31668Rev. A, 11-Aug-03

1.5

10

VGS - Gate-to-Source Voltage (V)

www.vishay.com

Si1433DH
New Product

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Single Pulse Power, Junction-to-Ambient
35

0.4

28

0.2

21

Power (W)

V GS(th) Variance (V)

Threshold Voltage
0.6

ID = 250 mA

0.0

14

- 0.2

- 0.4
- 50

- 25

25

50

75

100

125

0
0.001

150

0.01

TJ - Temperature (_C)

0.1

10

Time (sec)

Safe Operating Area

10

I D - Drain Current (A)

Limited by
rDS(on)

1 ms

10 ms
100 ms
1s

0.1
TC = 25_C
Single Pulse

10 s
dc

0.01
0.1

10

100

VDS - Drain-to-Source Voltage (V)

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

Normalized Effective Transient

Thermal Impedance

1
Duty Cycle = 0.5

0.2
Notes:

0.1
PDM

0.1

0.05
t1
t2
1. Duty Cycle, D =

0.02

t1
t2

2. Per Unit Base = RthJA = 105_C/W

3. TJM - TA = PDMZthJA(t)
4. Surface Mounted

Single Pulse
0.01
10 -4

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10 -3

10 -2

10 -1
1
Square Wave Pulse Duration (sec)

10

100

600

Document Number: 72323

S-31668Rev. A, 11-Aug-03

Si1433DH
New Product

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Normalized Thermal Transient Impedance, Junction-to-Foot
2

Normalized Effective Transient

Thermal Impedance

1
Duty Cycle = 0.5

0.2
0.1
0.1

0.05
0.02
Single Pulse

0.01
10 -4

Document Number: 72323

S-31668Rev. A, 11-Aug-03

10 -3

10 -2
10 -1
Square Wave Pulse Duration (sec)

10

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