1.

Design a Transistor Oscillator at 6 GHz using an FET in CS

configuration, driving a 50 load on drain side. The Sparameters at 50 are:
S11 = 0.9 150, S21 = 2.6 50
S12 = 0.2 -15, S22 = 0.5 105
Calculate and plot output stability for |IN| >> 1. Choose T so
that |IN| >> 1. Design load and terminating networks. (10
Marks | May 2014)
Ans: Given

Step 1:
Plotting stability circle on smith chart for load side matching network because at
load side S11 is associated and which tending towards 1.

2. Consider two Power BJT amplifiers used in circuit configuration

shown below having following specifications:
Amplifier
Go (dB)
Gi (dB)
Pi (dBm)
1
8
7
27
2
10
9
22

Assume that operating frequency is 1 GHz and input power is 5.5 dBm.
Specify correct BJT amplifiers that must be used at each stage to
obtain 29.5 dBm output power. Assume each two way divider/combiner
has 0.5 dB insertion loss. (10 Marks | May 2014)

ANS:

3. A MESFET is biased for large-signal class A operation with the

following small-signal S-parameters at 5 GHz:
S11 = 0.55 -150, S12 = 0.04 20
S21 = 3.5 170, S22 = 0.45 30
The large signal S21 = 2.8 180
Design a large-scale class A amplifier with maximum
transducer gain in 50 system. (10 Marks | Dec 2014)

4. For an ideal transformer with turns ratio

n=

n1
n 2 , prove that the

scattering matrix is

[ ]

n 21
n2+ 1
S=
2n
n2+ 1

2n
n2+ 1
1n2
n2+ 1

(10 Marks | May 2014)

ANS:Relation between S-parameter and ABCD parameters

We know that ABCD Parameter of Transformer is

For N : 1 term
From standard equation and given parameters we can calculate