Leo Esaki
The Nobel Prize in Physics 1973
NEGATIVE RESISTANCE
•
DEVICE
It is a device which exhibits a negative
incremental resistance over a limited range of
V-I characteristic.
• It is of two types :-
1. Current controllable type : V-I curve is a
multi valued function of
voltage and single valued function of
current .eg:- UJT, p-n-p-n diode
2. Voltage controllable type : V-I curve is a
multi valued function of current and single
valued function of voltage. eg:- SCS, Tunnel
diode -
TUNNEL DIODE (Esaki Diode)
• It was introduced by Leo Esaki in 1958.
EV
• Heavily-doped p-n junction
– Impurity concentration is 1 part in 10^3 as compared to 1 part in 10^8 in p-n
junction diode
• Width of the depletion layer is very small
(about 100 A).
• It is generally made up of Ge and GaAs.
• It shows tunneling phenomenon.
• Circuit symbol of tunnel diode is :
WHAT IS TUNNELING
• Classically, carrier must have energy at least
equal to potential-barrier height to cross the
junction .
• But according to Quantum mechanics there is
finite probability that it can penetrate through the
barrier for a thin width.
• This phenomenon is
called tunneling and
hence the Esaki Diode
is know as
Tunnel Diode.
CHARACTERISTIC OF TUNNEL DIODE
Ip
Forward Current
- Ve Resistance Region
Reference:-
Dan Wheeler ,”Advanced Semiconductor Devices” . Chapter –”Tunneling Devices”.( Microsoft ppt.)
ENERGY BAND DIAGRAM
Reference:-
D.A.Neamen,”Semiconductor Physics and Devices,”TataMcGraw-Hill,3rd edition,2002 ( Microsoft
AT ZERO BIAS
Simplified energy-band diagram and I-V characteristics of the tunnel diode at zero bias.
Reference:-
D.A.Neamen,”Semiconductor Physics and Devices,”TataMcGraw-Hill,3rd edition,2002 ( Microsoft
AT SMALL FORWARD VOLTAGE
Simplified energy-band diagram and I-V characteristics of the tunnel diode at a slight forward bias.
Simplified energy-band diagraam and I-V characteristics of the tunnel diode at a forward bias
producing maximum tunneling current.
Simplified energy-band diagram and I-V characteristics of the tunnel diode at a higher forward
bias producing less tunneling current.
Simplified energy-band diagram and I-V characteristics of the tunnel diode at a forward bias
for which the diffusion current dominates.
Reference :-
Don Arney ,”Diode and Diode circuits”, Chapter -9(”Negative Differential Resistance”Microsoft ppt.)
ASTABLE OPERATION OF TUNNEL DIODE
Reference:-
Don Arney ,”Diode and Diode circuits”, Chapter -9(”Negative Differential Resistance”, Microsoft ppt.)
BISTABLE OPERATION OF TUNNEL DIODE
Reference:-
Don Arney ,”Diode and Diode circuits”, Chapter -9(”Negative Differential Resistance”,Microsoft ppt.)
NEGATIVE RESISATANCE AMPLIFIER
•If Cj is tuned out then – g will represent the tunnel diode.
In absence of diode the maximum power will be gl=gs
P max=is^2/4gs
•With diode the load voltage VL= is /(gs-g+gl)
•Power delivered to load is
PL=glVL^2=gl.is^2/(gs-g+gl)^2
is gs gl -g
Ap = PL/Pmax = 4gs.gl/(gs-g+gl)^2
•For maximum power transfer gl=gs.
Ap=4.gl^2/(2gl-g)^2
=4.gl^2/(4gl^2 – 4gl.g + g ^2 )
Reference:- Kenndy,G. and B. Davis,”Electronics Communication system,” Tata McGraw-Hill,4th
edition,pp.440-447,1999.
=4.gl^2/(4gl^2 + g(g – 4.gl))
TUNNEL DIODE OSCILLATOR
•A tunnel diode, biased at
the center point of the
negative-resistance range
and coupled to a tuned
circuit or cavity, produces
a very stable oscillator.
• The oscillation frequency
is the same as the tuned
circuit or cavity frequency.
•Microwave tunnel-diode
oscillators are useful in
applications that require REFERENCE:-
microwatts or a few
milliwatts of power, such
as local oscillators for Kenndy,G. and B. Davis,”Electronics
Communication system,” Tata McGraw-
microwave. Hill,4th edition,pp.440-447,1999.
TUNNEL DIODE AS AMPLIFIER
•The low-noise
generation, gain ratios of
up to 30 dB, high
reliability, and light
weight make these
amplifiers ideal for use as
the first stage of
amplification in
communications and
radar receivers.
•The tunnel diode is
biased to the center point
REFERENCE:-
of its negative-resistance
region, but a
CIRCULATOR replaces Kenndy,G. and B. Davis,”Electronics
Communication system,” Tata McGraw-
the tuned cavity Hill,4th edition,pp.440-447,1999.
**OTHER APPLICATIONS**
• Used in high speed switching circuit.
• Used as pulse generator.
• Used for storage of binary information.
• Used for the construction of shift
register.
• Sensor modulator for telemetry of
temperature in human beings and
animals.
• Used in electron tunneling microscope.
ADVANTAGES OF TUNNEL DIODE