= tole . SaV—m Ga etlig gs Ped Yel Vidor Cee: 7 peo, : Varishor SKB uekR . WWE CQ : SOPRICO , A00R. 9) 4202 SOR Boon tofsont Selection — Pulbe, + Plse BHODOYUN Rio cw Kor K2e2 KB. \V 208: TEBT BuP 200, aA A2ku Sous U 202: Zenner tev, TayeSIEMENS BUP 200 IGBT Preliminary data + Low forward voltage drop + High switching speed + Low tail current + Latch-up free + Avalanche rated Pint | Pin2 | Pind G Cie ie Type Vee lc Package ‘Ordering Code BUP 200 1200 |3.6A | T0-220 AB (067078-A4400-A2 Maximum Ratings Parameter Symbol Values [unit Collector-emitter voltage Yor 1200 Vv Collector-gate voltage Voor Ree = 20k 1200 Gate-emitter voltage Voe £20 DC collector current Io A Te = 25°C 36 Te = 90°C 24 ‘Pulsed collector current, f= 1 ms Topuis To = 25°C 72 To =90°C 48 ‘Avalanche energy, single pulse Eas md Ie= 1.8, Voc = 80, Roe = 252 3.3mH, T)= 25°C 35 Power dissipation Pet w Te=25°C 50 Chip or operating temperature i “$5...4150 °C Storage temperature Tata 85... + 150 Semiconductor Group Dec-06-1995SIEMENS BUP 200 Maximum Ratings Parameter Symbol Values Unit DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 85 / 150/56 Thermal Resistance IGBT thermal resistance, chip case Rinse Electrical Characteristics, at T; = 25 °C, unless otherwise specified Parameter ‘Symbol Values Unit min. typ. |max. Static Characteristics Gate threshold voltage Vee = Voe, Io = 0.1 mA Von) 45 55 65 Collector-emitter saturation voltage Veg = 18 V, Ie = 1.54, T= 25°C Voe = 15 V, Io = 1.58, T= 125°C Vee = 15V, le = 1.5, T)= 150°C Voe(sat) 28 3.3 3.8 43 Zero gate voltage collector current Vee = 1000 V, Veg = OV, T)= 25°C Vog = 1000 V, Vee = OV, T= 125°C lees = 100 Gate-emitter leakage current Vee =20V, Vee = OV Ioes o4 100 AC Characteristics Transconductance Voe=20V, g=1.5A Input capacitance Vor = 25 V, Vee = OV, f= 1 MHz 225 320 pF Output capacitance Voe = 25 V, Vor = OV, = 1 MHz 25 40 Reverse transfer capacitance Vor = 25 V, Vee = 0V, f= 1 MHz 13 24 Semiconductor Group Dec-06-1995SIEMENS BUP 200 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter |Symbol Values Unit min. |typ. [max Switching Characteristics, Inductive Load at Tj = 125°C Turn-on delay time ‘atom ns Voc = 800 V, Var = 18V, le=1.5A Reon = 100.2 - 30 50 Rise time t Veo = 800V, Vor = 15V, lo=1.5A Reon = 100.2 . 20 30 Turn-off delay time fH Veo = 600 V, Vag =-15V, Ip = 1.5 Root = 100.0 - 170 | 250 Fall time a Voc = 600 V, Vee =-15V, I= 1.5.A Root = 100.0 - 15 25 Total turn-off loss energy Eot ms Voc = 600 V, Voge =-15V, = 1.5 Reon = 100.0 : - 02 |- Semiconductor Group 3 Dec-06-1995SIEMENS BUupP 200 Power dissipation Prot = fT) parameter: T; = 150°C ‘5 w om 4 6 1 120 36 1m en Safe operating area t= (Vee) parameter: , Te = 25°C, T, $ 150°C 10, pene A & 4 ce 10 02 cr ae ‘Semiconductor Group 4 Collector current Io=£(Te) parameter: Voe215V,, T; < 150°C al baal a 20 2 08 04 00 0m 4% 8 8 10 120 <0 160 a Transient thermal impedance IGBT Zn so = Ftp) parameter: D=(,/T 104 04 we wt ww * 0 — Dec-06-1995,SIEMENS BUP 200 Typ. output characteristics to = Voce) parameter: f) = 80 us, T,= 125°C 10 BA 20/0" sn suszos Typ. transfer characteristics to= (Vee) parameter: tp = 80 Us, Vog = 20V, T,= 25°C 0 BF 20/0 300 hie =20v/ TBv ] toon kon : i / ’ ; : : s 5 ‘ i 3 ; 2 2 ov : iV. WI 1 5 i “alle —o he ‘Typ. saturation characteri ‘Typ. saturation characteristics Voetsat) = (Vee) Veeisat) = (Vee) parameter: T;= 25°C parameter: T,= 125 ww s/n 30 sos memes suse i al Sd] “CELT bala B ; Yoren ¥ Yorn ha 1H | 7 4 7 CT ‘ 5 sLL 5 A 4 LL 7 3 4 a ct 2 2 ' L i {| LN L L a 10 15 vo 20 o 10 15 vo 20 — Na he ‘Semiconductor Group 5 Dec-06-1995,SIEMENS Typ. gate charge Voe = f(Qcete) parameter: fe pug = 1A = T x 10] ‘Semiconductor Group @ 16 20 2 no > Say BUP 200 Typ. capacitances C=f (Vee) parameter: Voge = 0V, f= 1 MHz 198 Ee 0 suo cop 1 102 10! 1o Oo 3 10 15° 20 25 (30 ¥ 35 a Dec-06-1995SIEMENS BUP 200 Package Outlines Dimensions in mm Weight: 8 g 98 + AA Tt 14: 2 rie eS No} + 8 a L 1 | Tey 1 | = al e ace 8 i [4 0.15] 05 tI 1.05 ws 24 254-21 + e254 eristss 1) punch direction, burr max. 0.04 2) dip inning 3) max. 14.5 by dip finning press burr mox. 0.05 ‘Semiconductor Group Deo-06-1995This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.