BC850
NPN Silicon AF Transistors
2
1
Type
Marking
Pin Configuration
BC846A
1As
1=B
2=E
3=C
SOT23
BC846B
1Bs
B=1
2=E
3=C
SOT23
BC847A
1Es
B=1
2=E
3=C
SOT23
BC847B
1Fs
1=B
2=E
3=C
SOT23
BC847C
1Gs
1=B
2=E
3=C
SOT23
BC848A
1Js
1=B
2=E
3=C
SOT23
BC848B
1Ks
1=B
2=E
3=C
SOT23
BC848C
1Ls
1=B
2=E
3=C
SOT23
BC849B
2Bs
1=B
2=E
3=C
SOT23
BC849C
2Cs
1=B
2=E
3=C
SOT23
BC850B
2Fs
1=B
2=E
3=C
SOT23
BC850C
2Gs
1=B
2=E
3=C
SOT23
VPS05161
Package
Nov-20-2002
BC846...BC850
Maximum Ratings
Parameter
Symbol
BC846
BC847
BC848
BC850
BC849
Unit
Collector-emitter voltage
VCEO
65
45
30
Collector-base voltage
VCBO
80
50
30
Collector-emitter voltage
VCES
80
50
30
Emitter-base voltage
VEBO
DC collector current
IC
100
mA
ICM
200
mA
IBM
200
IEM
200
Ptot
330
mW
Junction temperature
Tj
150
Storage temperature
Tstg
Thermal Resistance
240
RthJS
K/W
Symbol
Values
min.
typ.
Unit
max.
DC Characteristics
IC = 10 mA, IB = 0
BC846
65
BC847/850
45
BC848/849
30
BC846
80
BC847/850
50
BC848/849
30
V(BR)CBO
V(BR)CEO
1For calculation of R
thJA please refer to Application Note Thermal Resistance
Nov-20-2002
BC846...BC850
typ.
Unit
max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 A, VBE = 0
BC846
80
BC847/850
50
BC848/849
30
BC846/847
BC848-850
ICBO
15
nA
ICBO
V(BR)CES
V(BR)EBO
hFE -group A
140
hFE -group B
250
hFE -group C
480
hFE -group A
110
180
220
hFE -group B
200
290
450
hFE -group C
420
520
800
hFE
DC current gain 1)
IC = 2 mA, VCE = 5 V
hFE
mV
VCEsat
IC = 10 mA, IB = 0.5 mA
90
250
IC = 100 mA, IB = 5 mA
200
600
IC = 10 mA, IB = 0.5 mA
700
IC = 100 mA, IB = 5 mA
900
IC = 2 mA, VCE = 5 V
580
660
700
IC = 10 mA, VCE = 5 V
770
VBEsat
Base-emitter voltage 1)
VBE(ON)
Nov-20-2002
BC846...BC850
Unit
min.
typ.
max.
fT
250
MHz
Ccb
pF
Ceb
AC Characteristics
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Short-circuit input impedance
IC = 2 mA, VCE = 5 V, f = 1 kHz
hFE -gr.A
2.7
hFE -gr.B
4.5
hFE -gr.C
8.7
hFE -gr.A
1.5
hFE -gr.B
hFE -gr.C
hFE -gr.A
200
hFE -gr.B
330
hFE -gr.C
600
S
h22e
hFE -gr.A
18
hFE -gr.B
30
hFE -gr.C
60
1.2
dB
Vn
0.135
Noise figure
IC = 200 A, VCE = 5 V, RS = 2 k,
BC849
f = 1 kHz, f = 200 Hz
BC850
h21e
10-4
h12e
k
h11e
BC850
f = 10 ... 50 Hz
Nov-20-2002
BC846...BC850
360
mW
C CB0
( C EB0 )
300
12
pF
BC 846...850
EHP00361
10
P tot
270
240
C EB
210
180
150
120
C CB
90
60
30
0
0
15
30
45
60
75
90 105 120
0
10 -1
C 150
TS
10 0
V
VCB0
VCE = 5V
EHP00362
10 3
Ptot max
Ptot DC
EHP00363
10 3
MHz
tp
tp
D=
T
10 1
(VEB0 )
fT
10 2
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
10 2
10 0
10 -6
10
-5
10
-4
10
-3
10
-2
10
10 1
10 -1
5 10 0
10 1
mA
10 2
tp
Nov-20-2002
BC846...BC850
VCB = 30V
IC = f (VCEsat), h FE = 20
EHP00415
10 4
CB0
nA
mA
max
10 3
5
10
EHP00367
10 2
100 C
25 C
-50 C
10 1
5
typ
10
10
10 0
50
100
10 -1
150
0.1
0.2
0.4
0.3
TA
VCE = 5V
IC = f (VBEsat), hFE = 20
EHP00365
10 3
h FE 5
100 C
EHP00364
10 2
C mA
100 C
25 C
-50 C
25 C
10 2
-50 C
10 1
10 1
10 0
10 0
10 -2
V 0.5
VCEsat
10 -1
10 0
10 1
mA
10 -1
10 2
0.2
0.4
0.6
0.8
1.2
V BEsat
Nov-20-2002
BC846...BC850
VCE = 5V
IC = 2mA
EHP00368
10 2
he
EHP00369
2.0
he
h 11e
1.5
VCE = 5 V
10 1
C = 2 mA
h 21 e
h 12e
h 11 e
h 12 e
1.0
h 22 e
10 0 h
21e
0.5
5
h 22e
10 -1
10 -1
10 0
mA
10 1
10
20
VCE
20
BC 846...850
EHP00370
20
BC 846...850
EHP00371
dB
dB
15
15
10
10
0
10 -1
30
10 0
10 1
0
10 -2
10 2
VCE
10 -1
10 0
10 1
kHz 10 2
f
Nov-20-2002
BC846...BC850
20
BC 846...850
EHP00372
20
BC 846...850
EHP00373
dB
dB
15
15
RS = 1 M
100 k
10 k
RS = 1 M
100 k 10 k
10
10
500
1 k
5
500
1 k
0
10 -3
10 -2
10 -1
10 0
0
10 -3
mA 10 1
10 -2
10 -1
10 0
mA 10 1
20
BC 846...850
EHP00374
dB
F
15
R S = 1 M
100 k
10
10 k
500
5
1 k
0
10 -3
10 -2
10 -1
10 0
mA 10 1
Nov-20-2002