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BC846...

BC850
NPN Silicon AF Transistors

 For AF input stages and driver applications


 High current gain

 Low collector-emitter saturation voltage


 Low noise between 30 Hz and 15 kHz
 Complementary types: BC856, BC857, BC858

BC859, BC860 (PNP)

2
1

Type

Marking

Pin Configuration

BC846A

1As

1=B

2=E

3=C

SOT23

BC846B

1Bs

B=1

2=E

3=C

SOT23

BC847A

1Es

B=1

2=E

3=C

SOT23

BC847B

1Fs

1=B

2=E

3=C

SOT23

BC847C

1Gs

1=B

2=E

3=C

SOT23

BC848A

1Js

1=B

2=E

3=C

SOT23

BC848B

1Ks

1=B

2=E

3=C

SOT23

BC848C

1Ls

1=B

2=E

3=C

SOT23

BC849B

2Bs

1=B

2=E

3=C

SOT23

BC849C

2Cs

1=B

2=E

3=C

SOT23

BC850B

2Fs

1=B

2=E

3=C

SOT23

BC850C

2Gs

1=B

2=E

3=C

SOT23

VPS05161

Package

Nov-20-2002

BC846...BC850

Maximum Ratings
Parameter

Symbol

BC846

BC847

BC848

BC850

BC849

Unit

Collector-emitter voltage

VCEO

65

45

30

Collector-base voltage

VCBO

80

50

30

Collector-emitter voltage

VCES

80

50

30

Emitter-base voltage

VEBO

DC collector current

IC

100

mA

Peak collector current

ICM

200

mA

Peak base current

IBM

200

Peak emitter current

IEM

200

Total power dissipation, TS = 71 C

Ptot

330

mW

Junction temperature

Tj

150

Storage temperature

Tstg

-65 ... 150

Thermal Resistance

Junction - soldering point1)

240

RthJS

K/W

Electrical Characteristics at TA = 25C, unless otherwise specified.


Parameter

Symbol

Values
min.

typ.

Unit
max.

DC Characteristics
IC = 10 mA, IB = 0

BC846

65

BC847/850

45

BC848/849

30

BC846

80

BC847/850

50

BC848/849

30

V(BR)CBO

Collector-base breakdown voltage


IC = 10 A, IE = 0

V(BR)CEO

Collector-emitter breakdown voltage

1For calculation of R
thJA please refer to Application Note Thermal Resistance

Nov-20-2002

BC846...BC850

Electrical Characteristics at TA = 25C, unless otherwise specified.


Parameter
Symbol
Values
min.

typ.

Unit
max.

DC Characteristics
Collector-emitter breakdown voltage
IC = 10 A, VBE = 0

BC846

80

BC847/850

50

BC848/849

30

BC846/847

BC848-850

ICBO

15

nA

ICBO

Emitter-base breakdown voltage


IE = 1 A, IC = 0

V(BR)CES

V(BR)EBO

Collector cutoff current


VCB = 40 V, IE = 0
Collector cutoff current
VCB = 30 V, IE = 0 , TA = 150 C
DC current gain 1)
IC = 10 A, VCE = 5 V

hFE -group A

140

hFE -group B

250

hFE -group C

480

hFE -group A

110

180

220

hFE -group B

200

290

450

hFE -group C

420

520

800

hFE

DC current gain 1)
IC = 2 mA, VCE = 5 V

hFE

Collector-emitter saturation voltage1)

mV

VCEsat

IC = 10 mA, IB = 0.5 mA

90

250

IC = 100 mA, IB = 5 mA

200

600

IC = 10 mA, IB = 0.5 mA

700

IC = 100 mA, IB = 5 mA

900

IC = 2 mA, VCE = 5 V

580

660

700

IC = 10 mA, VCE = 5 V

770

Base-emitter saturation voltage 1)

VBEsat

Base-emitter voltage 1)

VBE(ON)

1) Pulse test: t =300s, D = 2%

Nov-20-2002

BC846...BC850

Electrical Characteristics at TA = 25C, unless otherwise specified.


Parameter
Symbol
Values

Unit

min.

typ.

max.

fT

250

MHz

Ccb

pF

Ceb

AC Characteristics
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Short-circuit input impedance
IC = 2 mA, VCE = 5 V, f = 1 kHz

hFE -gr.A

2.7

hFE -gr.B

4.5

hFE -gr.C

8.7

Open-circuit reverse voltage transf.ratio


IC = 2 mA, VCE = 5 V, f = 1 kHz

hFE -gr.A

1.5

hFE -gr.B

hFE -gr.C

hFE -gr.A

200

hFE -gr.B

330

hFE -gr.C

600

S

h22e

hFE -gr.A

18

hFE -gr.B

30

hFE -gr.C

60

1.2

dB

Vn

0.135

Noise figure
IC = 200 A, VCE = 5 V, RS = 2 k,

BC849

f = 1 kHz,  f = 200 Hz

BC850

Equivalent noise voltage


IC = 200 A, VCE = 5 V, RS = 2 k,

h21e

Open-circuit output admittance


IC = 2 mA, VCE = 5 V, f = 1 kHz

10-4

h12e

Short-circuit forward current transf.ratio


IC = 2 mA, VCE = 5 V, f = 1 kHz

k

h11e

BC850

f = 10 ... 50 Hz

Nov-20-2002

BC846...BC850

Collector-base capacitance CCB = f (VCBO)


Emitter-base capacitance CEB = f (VEBO)

Total power dissipation Ptot = f(TS)

360

mW

C CB0
( C EB0 )

300

12
pF

BC 846...850

EHP00361

10

P tot

270
240

C EB

210
180

150
120

C CB

90
60

30
0
0

15

30

45

60

75

90 105 120

0
10 -1

C 150
TS

10 0

V
VCB0

Permissible pulse load

Transition frequency fT = f (IC)

Ptotmax / PtotDC = f (tp )

VCE = 5V
EHP00362

10 3
Ptot max
Ptot DC

EHP00363

10 3
MHz

tp

tp
D=
T

10 1
(VEB0 )

fT

10 2

D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5

10 1

10 2

10 0
10 -6

10

-5

10

-4

10

-3

10

-2

10

10 1
10 -1

5 10 0

10 1

mA

10 2

tp

Nov-20-2002

BC846...BC850

Collector cutoff current ICBO = f (TA)

Collector-emitter saturation voltage

VCB = 30V

IC = f (VCEsat), h FE = 20
EHP00415

10 4

CB0

nA

mA

max

10 3
5

10

EHP00367

10 2

100 C
25 C
-50 C

10 1
5

typ

10
10

10 0

50

100

10 -1

150

0.1

0.2

0.4

0.3

TA

DC current gain hFE = f (IC )

Base-emitter saturation voltage

VCE = 5V

IC = f (VBEsat), hFE = 20
EHP00365

10 3

h FE 5

100 C

EHP00364

10 2

C mA
100 C
25 C
-50 C

25 C
10 2

-50 C

10 1

10 1

10 0

10 0
10 -2

V 0.5
VCEsat

10 -1

10 0

10 1

mA

10 -1

10 2

0.2

0.4

0.6

0.8

1.2

V BEsat

Nov-20-2002

BC846...BC850

h parameter he = f (IC) normalized

h parameter he = f (VCE) normalized

VCE = 5V

IC = 2mA
EHP00368

10 2
he

EHP00369

2.0

he
h 11e

1.5

VCE = 5 V

10 1

C = 2 mA
h 21 e

h 12e

h 11 e

h 12 e

1.0

h 22 e
10 0 h
21e
0.5

5
h 22e
10 -1

10 -1

10 0

mA

10 1

10

20

VCE

Noise figure F = f (VCE )

Noise figure F = f (f)

IC = 0.2mA, RS = 2k, f = 1kHz

IC = 0.2mA, VCE = 5V, R S = 2k

20

BC 846...850

EHP00370

20

BC 846...850

EHP00371

dB

dB

15

15

10

10

0
10 -1

30

10 0

10 1

0
10 -2

10 2

VCE

10 -1

10 0

10 1

kHz 10 2
f

Nov-20-2002

BC846...BC850

Noise figure F = f (IC )

Noise figure F = f (IC)

VCE = 5V, f = 120Hz

VCE = 5V, f = 1kHz

20

BC 846...850

EHP00372

20

BC 846...850

EHP00373

dB

dB

15

15
RS = 1 M

100 k

10 k

RS = 1 M

100 k 10 k

10

10
500

1 k
5

500

1 k

0
10 -3

10 -2

10 -1

10 0

0
10 -3

mA 10 1

10 -2

10 -1

10 0

mA 10 1

Noise figure F = f (IC )


VCE = 5V, f = 10kHz

20

BC 846...850

EHP00374

dB

F
15

R S = 1 M
100 k

10

10 k

500

5
1 k

0
10 -3

10 -2

10 -1

10 0

mA 10 1

Nov-20-2002

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