Chapter 3
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
Chapter 3
3.1
If a o were to increase, the bandgap energy
would decrease and the material would begin
to behave less like a semiconductor and more
like a metal. If a o were to decrease, the
bandgap energy would increase and the
material would begin to behave more like an
insulator.
_______________________________________
3.2
Schrodinger's wave equation is:
2 2 x, t
V x x, t
2m
x 2
x, t
j
t
E
Eu x exp j kx
t
This equation may be written as
k 2 u x 2 jk
d 2 u1 x
dx 2
E
x, t u x exp j kx
t
u x
exp
x
2m
E
j kx
t
E
j kx t
jk 2 u x exp
u x
exp
x
2 u x
exp
x 2
E
j kx
t
E
j kx t
2mE
2
E
j kx t
jk 2 u x exp
2 jk
which becomes
E
x, t u x exp j kx
t
E
j kx t
jE
u x exp
2 jk
Q.E.D.
In Region II, V x VO . Assume the
same
form of the solution:
E
jku x exp j kx t
2m
du1 x
k 2 2 u1 x 0
dx
2 jk
where
2m x
u x 2 u x 2mE
2 u x 0
x
x 2
2 u x
exp
2
x
u x
E
exp j kx
t
x
E
j kx t
E
VO u x exp j kx
t
E
Eu x exp j kx
t
k 2 u x 2 jk
2mVO
u x
u x 2 u x
x
x 2
j k B exp j k x
B exp j k x 0
2mE
u x 0
2
d 2u 2 x
dx 2
2 jk
du 2 x
dx
2k k 2 2k k k 2 2
A exp j k x
B exp j k x 0
Q.E.D.
For the differential equation in u 2 x and
2mE
2
Q.E.D.
the
proposed solution, the procedure is exactly
the same as above.
_______________________________________
3.4
We have the solutions
u1 x A exp j k x
B exp j k x
3.3
We have
dx 2
for 0 x a and
du x
2 jk 1 k 2 2 u1 x 0
dx
u1 x A exp j k x
B exp j k x
u 2 x C exp j k x
D exp j k x
for b x 0 .
The first boundary condition is
u1 0 u 2 0
du1 x
j k A exp j k x
dx
j k B exp j k x
and the second derivative becomes
d 2 u1 x
dx
j k A exp j k x
2
j k B exp j k x
2
00
_______________________________________
d 2 u1 x
We find that
where again
2 2k k 2 2k k k 2 2
2mV
k 2 O u 2 x 0
k 2 2 A exp j k x
which yields
A B C D 0
dx x 0
dx x 0
which yields
k A k B k C
kD 0
The third boundary condition is
u1 a u 2 b
which yields
A exp j k a B exp j k a
C exp j k b
D exp j k b 0
dx x a
dx x b
which yields
j k A exp j k a
j k B exp j k a
j k C exp j k b
j k D exp j k b
and can be written as
k A exp j k a
k B exp j k a
k C exp j k b
k D exp j k b 0
_______________________________________
3.5
a 1.729
(ii) First point: a 2
a 2.617
_______________________________________
Consider
d
of this function.
dy
We find
dx
dx
2
1
P 1 x sin x
x cos x
dy
dy
sin x
dx
sin y
dy
Then
dx
dy
cos x
1
sin x sin y
P 2 sin x
x
x
For y ka n , n 0, 1, 2, ...
sin y 0
So that, in general,
dx
d a d
0
dy
d ka
dk
And
2mE
2
So
1 / 2
d 1 2mE
2m dE
2
2
dk
2
dk
This implies that
d
dE
n
0
for k
dk
dk
a
_______________________________________
3.6
a 1.515
a 2.375
_______________________________________
d
1
P x sin x cos x sin y
dy
3.8
(a) 1 a
2 m o E1
2
2 1.054 10 34
2 2
E1
2m o a 2
2 9.11 10 31 4.2 10 10
3.4114 10 19 J
From Problem 3.5
E2
1.729 2 1.054 10 34 2
2 9.11 10 31 4.2 10 10
1.0198 10 18 J
E E 2 E1
6.7868 10 19
4.24 eV
1.6 10 19
(b) 3 a 2
or E
2
E3
a 2
2 2 1.054 10 34 2
2 9.11 10
31
4.2 10
2
E4
2.617 2 1.054 10 34 2
2 9.11 10
31
4.2 10
10 2
2.3364 10 18 J
E E 4 E 3
2.3364 10 18 1.3646 10 18
9.718 10 19 J
or E
9.718 10 19
6.07 eV
1.6 10 19
_______________________________________
2 1.054 10 34 2
2 9.11 10 31 4.2 10 10
0.859 2 1.054 10 34 2
2 9.11 10 31 4.2 10 10
2.5172 10 19 J
E E 1 E o
3.4114 10 19 2.5172 10 19
8.942 10 20 J
8.942 10 20
0.559 eV
1.6 10 19
(b) At ka 2 , 3 a 2
or E
2m o E 3
2
E3
a 2.617
3.4114 10 19 J
At ka 0 , By trial and error,
o a 0.859
10 2
1.3646 10 18 J
From Problem 3.5,
4 a 2.617
2m o E 4
2 m o E1
Eo
1.0198 10 18 3.4114 10 19
6.7868 10 19 J
2m o E 3
E1
a 1.729
3.9
(a) At ka , 1 a
2 a 1.729
2m o E 2
a 2
2 2 1.054 10 34 2
2 9.11 10 31 4.2 10 10
1.3646 10 18 J
At ka . From Problem 3.5,
2 a 1.729
2m o E 2
2
E2
a 1.729
1.729 2 1.054 10 34 2
2 9.11 10 31 4.2 10 10
1.0198 10 18 J
E E 3 E 2
1.3646 10 18 1.0198 10 18
3.4474 10 19 J
3.4474 10 19
2.15 eV
1.6 10 19
or E
_______________________________________
E4
2.375 2 1.054 10 34 2
2 9.11 10 31 4.2 10 10
1.9242 10 18 J
E E 4 E 3
1.9242 10 18 1.3646 10 18
5.597 10 19 J
or E
3.10
(a) 1 a
2 m o E1
2
E1
_____________________________________
2 1.054 10 34 2
2 9.11 10 31 4.2 10 10
3.4114 10 19 J
From Problem 3.6, 2 a 1.515
2m o E 2
2
E2
2m o E1
2
E E 2 E1
7.830 10
3.4114 10
4.4186 10 19 J
19
4.4186 10
1.6 10 19
(b) 3 a 2
or E
2
Eo
a 2
a 0.727
0.727 2 1.054 10 34 2
2 9.11 10 31 4.2 10 10
1.8030 10 19 J
E E1 E o
1.3646 10 18 J
From Problem 3.6, 4 a 2.375
a 2.375
2m o E o
2.76 eV
2 9.11 10 31 4.2 10 10
2 9.11 10 31 4.2 10 10
19
2 2 1.054 10 34 2
2m o E 4
2 1.054 10 34 2
o a 0.727
19
E3
E1
3.4114 10 19 J
At ka 0 , By trial and error,
7.830 10 19 J
a 1.515
2 9.11 10 31 4.2 10 10
2m o E 3
3.11
(a) At ka , 1 a
1.515 2 1.054 10 34 2
5.597 10 19
3.50 eV
1.6 10 19
3.4114 10 19 1.8030 10 19
1.6084 10 19 J
or
1.6084 10 19
1.005 eV
1.6 10 19
(b) At ka 2 , 3 a 2
E
a 2
E3
d 2E
d 2E
curve
A
curve B
dk 2
dk 2
2 2 1.054 10
2 9.11 10
31
34 2
4.2 10
10
18
J
1.3646 10
At ka , From Problem 3.6,
3.14
The effective mass for a hole is given by
1 d 2E
m 2
dk 2
*
p
2 a 1.515
2m o E 2
2
E2
1.515 2 1.054 10 34 2
7.830 10 19 J
E E 3 E 2
dE
0 velocity in -x
dk
Points A,B:
1.3646 10 18 7.830 10 19
5.816 10 19 J
or E
We have that
2
d 2E
curve A d E2 curve B
2
dk
dk
a 1.515
2 9.11 10 34 4.2 10 10
5.816 10 19
3.635 eV
1.6 10 19
_______________________________________
direction
dE
0 velocity in +x
dk
Points C,D:
direction
d 2E
0
dk 2
Points A,D:
d 2E
Points B,C:
0
dk 2
positive effective mass
_______________________________________
3.12
For T 100 K,
E g 1.170
4.73 10 100
4
636 100
3.16
For A: E C i k 2
E g 1.164 eV
T
T
T
T
T
200 K,
300 K,
400 K,
500 K,
600 K,
E g 1.147 eV
E g 1.125 eV
E g 1.097 eV
E g 1.066 eV
E g 1.032 eV
_______________________________________
3.13
The effective mass is given by
1 d E
m * 2
2
dk
We have
2
At k 0.08 10 10 m
, E 0.05
eV
Or
E 0.05 1.6 10 19 8 10 21 J
So 8 10 21 C1 0.08 1010
C1 1.25 10 38
1.054 10 34
2
Now m
2C1
2 1.25 10 38
4.44 10
or m
31
kg
31
4.4437 10
mo
9.11 10 31
m 0.488 m o
, E 0.5
eV
Or
E 0.5 1.6 10 19 8 10 20 J
So 8 10
20
C1 0.08 10
10
4.44 10
32
hc c
3 10 10
E 3.429 10 14
8.75 10 5 cm 875 nm
(b) (i)
4.4437 10 32
or m
mo
9.11 10 31
(ii)
8.8873 10
3.19
(c) Curve A: Effective mass is a constant
Curve B: Effective mass is positive
around k 0 , and is negative
around k
2 1.054 10 34
m
2C 2
2 6.25 10 39
31
3.20
kg
E E O E1 cos k k O
Then
dE
E1 sin k k O
dk
m 0.976 m o
E1 sin k k O
For B: E E C 2 k 2
0.3 1.6 10
C 0.08 10
10
and
d 2E
E1 2 cos k k O
2
dk
C 2 7.5 10 38
2 1.054 10 34
2C 2
2 7.5 10 38
7.406 10
32
32
7.406 10
or m
9.11 10 31
kg
Then
1
1 d 2E
m * 2 dk 2
mo
m 0.0813 m o
_______________________________________
3.18
.
2
_______________________________________
8.8873 10 31
or m
mo
9.11 10 31
19
c
3 10 10
2.705 10 14
nm
_______________________________________
3.17
For A: E E C 2 k 2
C 2 6.25 10 39
1.109 10 4 cm 1109
m 0.0488 m o
_______________________________________
E 1.12 1.6 10 19
h
6.625 10 34
2.705 10 14 Hz
kg
(ii)
1.054 10 34
2
Now m
2C1
2 1.25 10 37
E 1.42 1.6 10 19
h
6.625 10 34
3.429 10 14 Hz
C1 1.25 10 37
or
or
m*
2
E1 2
k ko
E1 2
2
XZ
XY
x 2
y 2
z 2
3.21
m dn
4 2 / 3 mt ml
(a)
1/ 3
4 2 / 3 0.082m o 1.64m o
m
(b)
3
dn
1/ 3
0.56m o
24.39 0.6098
mo
mo
m cn
0.12m o
_______________________________________
3.22
(a) m dp
m hh
0.45m o
0.082m o
dp
cp
3/ 2 2/3
2/3
0.45 3 / 2 0.082 3 / 2
0.45 1 / 2 0.082 1 / 2
mo
mo
_______________________________________
3.23
For the 3-dimensional infinite potential well,
V x 0 when 0 x a , 0 y a , and
0 z a . In this region, the wave equation
is:
2 x, y, z
y
1 2 X
2 X
2 k x2
k x2 X 0
2
X x
x
X x A sin k x x B cos k x x
Since x, y , z 0 at x 0 , then
Similarly, we have
1 2Y
1 2Z
k y2 and
2 k z2
2
Y y
Z z
From the boundary conditions, we find
k y a n y and k z a n z
where
n y 1, 2, 3, ... and
n z 1, 2, 3, ...
m cp
0.34m o
Let
n x 1, 2, 3, ...
m hh 3 / 2 mlh 3 / 2
m hh 1 / 2 mlh 1 / 2
2 x, y, z
1 2 X 1 2 Y 1 2 Z 2mE
2 0
X x 2 Y y 2 Z z 2
so that B 0 .
Also, x, y , z 0 at x a , so that
X a 0 . Then k x a n x where
0.473m o
XYZ , we obtain
X 0 0
3/2 2/3
0.30187 0.02348
(b)
3/ 2
m lh
3/ 2
2mE
XYZ 0
2
Dividing by
2
1
2
1
m t ml
0.082m o 1.64m o
cn
2 x, y, z
z
2mE
x, y , z 0
2
k x2 k y2 k z2
2mE
0
2
2
n x2 n 2y n z2
2m
a
_______________________________________
E E nx n y nz
3.24
The total number of quantum states in the
3-dimensional potential well is given
(in k-space) by
g T k dk
where
k2
2mE
2
k 2 dk 3
a
3
g T E dE
2mE
2m n
2a 1
dE
2
E
g E
2m n
1
1
1 1
1
m
2m
dE
dE
2
E
E
Substituting these expressions into the density
of states function, we have
dk
a
g T E dE 3
m
2mE 1
dE
2
2E
Noting that
h
2
this density of states function can be
simplified and written as
g T E dE
4 a 3
h
2m 3 / 2
E dE
4 2m
g E
h3
So
g E
2 dk
Now
1
2m n E
1 1 2m n
dk
dE
2
E
Then
3/ 2
E Ec
h3
3 / 2 E c 2 kT
h3
4 2m n
E E c dE
Ec
3/2
h3
4 2m n
4 2m n
gc
k n 1 k n n 1
n
a
a
a
Now
g T k dk
1.055 10
gc E
n 2 2
k2
2
a
18
3.26
(a) Silicon, m n 1.08m o
3.25
For a one-dimensional infinite potential well,
2m n E
m 3 J 1
E
_______________________________________
3/ 2
_______________________________________
2 0.067 9.11 10 31
1.054 10 34
g E
2
3/ 2
E Ec
3
4 2m
h
3/ 2
n
Ec
2
3/ 2
2kT
3
4 21.08 9.11 10 31
6.625 10
3/ 2
34 3
E c 2 kT
7.953 10 55 2kT
2
3/ 2
2kT
3
3/ 2
0.0259 1.6 10 19
4.144 10 21 J
Then
g c 7.953 10 55 2 4.144 10 21
6.0 10 25 m
3/ 2
g c 6.0 10 19 cm
(ii) At T 400 K,
400
kT 0.0259
300
or
0.034533 eV
5.5253 10 21 J
Then
g c 7.953 10 55 2 5.5253 10 21
9.239 10 25 m
g c 9.24 10 19 cm
or
3/ 2
6.625 10
1.2288 10 54 2kT
3/ 2
2
3/ 2
2kT
3
9.272 10 23 m
3/ 2
4 2m p
h3
3/ 2
3/ 2
3/ 2
4 2 0.48 9.11 10 31
6.625 10
34 3
3/ 2
2
3/ 2
3kT
3
3/ 2
3/ 2
g 2.3564 10 55 3 4.144 10 21
3.266 10 25 m
or g 3.27 10 19 cm
E E
E 3 kT
2
3/ 2
3kT
3
3.27
(a) Silicon, m p 0.56m o
3
3/ 2
2.3564 10 55 3kT
g c 1.43 1018 cm 3
_______________________________________
3/2
or g 4.12 10 19 cm
4 2m
2.969 10 55 3kT
or g 6.34 10 19 cm
g c 1.2288 10 54 2 5.5253 10 21
g E
6.625 10
6.337 10 25 m
kT 5.5253 10 21 J
3/ 2
p
34 3
(ii) At T 400 K,
1.427 10 24 m
2
3/ 2
3kT
3
E 3 kT
g 2.969 10 55 3 5.5253 10 21
g c 1.2288 10 54 2 4.144 10 21
4 2 0.56 9.11 10 31
3/ 2
or g c 9.27 1017 cm
3/ 2
p
g 2.969 10 55 3 4.144 10 21
34 3
4 2m
2
3/ 2
E E
3
4.116 10 25 m
4 2 0.067 9.11 10 31
3/ 2
gc
0.034533 1.6 10 19
4 2m p
E E dE
3/2
(ii)At T 400 K,
kT 5.5253 10 21 J
g 2.3564 10 55 3 5.5253 10 21
5.029 10 25 m
or g 5.03 10 19 cm 3
_______________________________________
3/ 2
E
c
3
_______________________________________
h
4 21.08 9.11 10 31
6.625 10
E Ec
34 3
1.1929 10 56
For E E c ;
3.31
3/ 2
E Ec
gc 0
E E c 0.2 eV;
3
E E c 0.3 eV;
3
Wi
2.614 10 46
(ii)
3.018 10
4 2m p
46
E E
h3
31
6.625 10
4.4541 10 55
For E E ;
E E
E E
7.968 10 45
E E 0.3 eV;
m
9.758 10 45
E E 0.4 eV;
120
12!
121110!
12!
12 1110 9 8!
8!12 8!
8! 4 3 21
495
f E
3/ 2
1.127 10 46
1
E EF
1 exp
kT
(a) E E F kT , f E
g 0
E E 0.2 eV;
10 9 8
3 21
3.32
34 3
Wi
_______________________________________
3/ 2
4 2 0.56 9.11 10
(b) (i)
(b) g
10 9 8 7!
7! 3!
2.134 10 46
E E c 0.4 eV;
m
gi!
10!
N i ! g i N i ! 7!10 7 !
(a) Wi
f E 0.269
1 exp1
(b) E E F 5kT ,
1
f E
1 exp 5
f E 6.69 10 3
(c) E E F 10kT ,
1
f E
1 exp10
f E 4.54 10 5
m 3 J 1
_______________________________________
_______________________________________
3.29
3.33
(a)
(b)
3/ 2
n
3/ 2
gc
m
g
mp
3/ 2
n
3/2
gc
m
g
mp
1.08
0.56
0.067
0.48
3/ 2
2.68
1 f E 1
or
3/2
0.0521
1 exp
1
E EF
kT
1
EF E
kT
1 f E
1 exp
1
E
kT
(a)
, f E 0.269
F
1 f E 4.54 10 5
0.25
0.0259
E E ; 1 f F exp
6.43 10 5
kT
;
E
2
0.25 0.0259 2
1 f F exp
0.0259
_______________________________________
3.90 10 5
E kT ;
0.25 0.0259
0.0259
1 f F exp
3.34
E EF
(a) f F exp
kT
2.36 10 5
E Ec ;
0.30
6
9.32 10
0.0259
f F exp
kT
;
2
0.30 0.0259 2
f F exp
0.0259
6
5.66 10
E c kT ;
Ec
0.30 0.0259
0.0259
f F exp
3kT
;
2
0.25 3 0.0259 2
0.0259
1 f F exp
E 2kT ;
1.43 10 5
0.25 2 0.0259
0.0259
1 f F exp
8.70 10 6
_______________________________________
3.43 10 6
Ec
3kT
;
2
0.30 3 0.0259 2
0.0259
f F exp
E c 2kT ;
2.08 10 6
0.30 2 0.0259
0.0259
f F exp
1.26 10 6
(b)
1 f F 1
1 exp
1
E EF
kT
EF E
kT
exp
3.35
E c kT E F
E EF
exp
kT
kT
f F exp
and
EF E
kT
1 f F exp
E F E kT
kT
exp
E c kT E F
kT
So exp
E F E kT
kT
exp
E F 2.35 eV
E c E
E midgap
2
_______________________________________
1.054 10 3 2 3
29.11 10 12 10
34 2
3.36
E13
n
2ma 2
For n 6 , Filled state
2
En
1.054 10 6
2 9.11 10 12 10
2
10 2
31
1.5044 10 18 J
1.5044 10 18
9.40 eV
1.6 10 19
For n 7 , Empty state
or E 6
E7
1.054 10 7
2 9.11 10 12 10
34 2
10 2
31
2.048 10 18 J
2.048 10 18
12.8 eV
1.6 10 19
Therefore 9.40 E F 12.8 eV
or
E7
_______________________________________
10 2
31
2mE
n x2 n 2y n z2
a
For 5 electrons, the 5th electron occupies
the quantum state n x 2, n y 2, n z 1 ;
so
2 2
n x n 2y n z2
2m
a
or E13
9.194 10 19
5.746 eV
1.6 10 19
f 1 E1
1
E1 E F
kT
E
1 exp
kT
1 exp
being empty is
3.37
(a) For a 3-D infinite potential well
E5
9.194 10 19 J
34 2
E6
1 f 2 E2 1
1
E EF
1 exp 2
kT
E
exp
1
kT
1
E
E
1 exp
1 exp
kT
kT
or
1.054 10 2 2 1
2 9.11 10 12 10
34 2
31
10 2
3.761 10 19 J
or
E5
1 f 2 E2
3.761 10 19
2.35 eV
1.6 10 19
1
E
1 exp
kT
so f 1 E1 1 f 2 E 2
Q.E.D.
_______________________________________
3.39
(a) At energy E1 , we want
1
E EF
exp 1
kT
1 exp
1 exp
1
E1 E F
kT
1
E1 E F
kT
0.25
kT
0.02 exp
0.01
1
0.25
0.02 50
kT
or exp
0.25
ln 50
kT
E EF
1 exp 1
kT
1 0.01
E1 E F
exp
kT
or
E EF
1 0.01 exp 1
kT
Then
E1 E F kT ln 100
or
E1 E F 4.6kT
(b)
At E E F 4.6kT ,
f E1
1
1
1 exp 4.6
E EF
1 exp 1
kT
which yields
f E1 0.00990 0.01
_______________________________________
3.40
(a)
E EF
5.80 5.50
exp
kT
0.0259
f F exp
9.32 10 6
700
0.060433
300
(b) kT 0.0259
eV
0.30
3
6.98 10
0.060433
f F exp
EF E
kT
(c) 1 f F exp
or
kT
0.25
T
0.063906 0.0259
ln 50
300
1
0.00304
7
.15 7.0
1 exp
0.0259
or 0.304%
(b) At T 1000 K, kT 0.08633 eV
Then
f E
1
0.1496
7.15 7.0
1 exp
0.08633
or 14.96%
(c)
1
f E
0.997
6.85 7.0
1 exp
0.0259
or 99.7%
(d)
1
At E E F , f E
for all
2
temperatures
_______________________________________
f E
3.42
(a) For E E1
f E
1 exp
1
E1 E F
kT
E1 E F
exp
kT
Then
f E 9.32 10 6
At E E 2 ,
For E E 2 ,
1 f E 1
1
0.82
1 exp
0.0259
or
EF E2
kT
1 f E exp
0.30
6
f E1 exp
9.32 10
0.0259
1.12
exp
0.0259
or
1 f E 1.66 10 19
E1 E F 1.02
eV
At E E1 ,
0.82
1 f E 1 1 exp
0.0259
0.82
14
exp
1.78 10
0.0259
(b) For E F E 2 0.4 eV,
E1 E F
1.02
exp
kT
0.0259
f E exp
or
f E 7.88 10 18
At E E 2 ,
E1 E F 0.72 eV
At E E1 ,
EF E2
kT
1 f E exp
E1 E F
0.72
exp
kT
0.0259
f E exp
or
f E 8.45 10 13
At E E 2 ,
EF E2
kT
1 f E exp
0.4
exp
0.0259
or
0.4
exp
0.0259
or 1 f E 1.96 10 7
_______________________________________
3.44
E EF
f E 1 exp
kT
E1 E F
0.30
exp
kT
0.0259
or
df E
E EF
1 1 exp
dE
kT
_______________________________________
f E exp
so
1 f E 1.96 10 7
3.43
(a) At E E1
1
exp
kT
or
E EF
kT
df E
dE
E EF
1
exp
kT
kT
E EF
1 exp
kT
(a) At T 0 K, For
f E
df
E E F exp 0
0
dE
df
E E F exp
0
dE
df
At E E F
dE
(b) At T 300 K, kT 0.0259 eV
df
0
For E E F ,
dE
df
0
For E E F ,
dE
At E E F ,
1
df
0.0259
9.65
dE
1 1 2
(eV)
1
1
E EF
Eg
1 exp
1 exp
kT
2kT
f E
1.12
2 0.0259
1 exp
or
f E 4.07 10 10
Ge: E g 0.66 eV
f E
0.66
2 0.0259
1 exp
or
f E 2.93 10 6
GaAs: E g 1.42 eV
f E
1.42
2
0
.0259
1 exp
or
f E 1.24 10 12
1
1
df
0
.
04317
(eV)
5.79
2
dE
1 1
3.46
(a)
0.60
kT
10 8 exp
_______________________________________
3.45
(a) At E E midgap ,
E EF
kT
f F exp
or
0.60
ln 10 8
kT
kT
0.60
0.032572 eV
ln 10 8
300
0.032572 0.0259
kT
0.60
ln 10 6
kT
0.60
kT
0.043429
ln 10 6
300
0.043429 0.0259
or T 503 K
_______________________________________
3.47
(a) At T 200 K,
200
0.017267 eV
300
kT 0.0259
f F 0.05
1 exp
E EF
exp
kT
1
E EF
kT
1
1 19
0.05
E E F kT ln 19 0.017267 ln 19
0.05084 eV
By symmetry, for f F 0.95 ,
E E F 0.05084 eV
E E F kT ln 19 0.034533 ln 19
0.10168 eV