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BCDLite Data Sheet

GeneralDescription
BCDliteisoneoftheGLOBALFOUNDREISkeytechnologyplatformsforcosteffectivepowerman
agementandpowerconvertersolutions.Itofferstremendousdesignflexibility,isscalableandfea
turesreusabilityofitsfunctionallogicandanalogblocksacrosstheplatform.Formediumlevel
integration,BCDLiteofferagreen,laterallydiffusedmetaloxidesemiconductor(LDMOS)platform
witha180nmprocessat3.3and6.0V,averydenseOTP,a10VLDMOSat0.18m.Forhighlevel
integration,BCDLiteoffersa180,andsoon,130,and65nmplatformsforhighend,hightech
systemonchips(SoCs)andsystems.Forpowerelectronics,BCDLiteoffersadiscretegalliumnitride
powermetaloxidesemiconductor(GaNMOS)onsilicon.BCDLitetechnologyintegratescomplimen
tarymetaloxidesemiconductor(CMOS),LDMOSandbipolarplatforms.Itisbasedonthemature
BCDprocess,minussomeofmoreexpensivecomponentsofBCD.

GreenSolutions

DesignFeatures

ApplicationSegments

Toys
ConsumerElectronics
LowCostSoCs
HighlyIntegrated,HighTech

SmartPMC
DesignReusability
VoltageOptimization
CostEfficient
FunctionalSystem
Partition

PowerManagement
Audio
MEMsDriverICs
LEDDriverICs
WiredCommunications
MotorControllers

Process(nm)
600
350
220
180

130
BCDlite
65

LV&MVGateOxides(MV:3.3/5/6V)
5/12V(DG)
3.3/5/20V(DG)
2.5/5V
1.8VULLOR1.8VIC
ISO5/6VMediumVoltage
ISO8VNMOS
ISO/NonISO10VLDMOS
NonISO16VLDMOS
ISO&NonISO30VLDMOS
NonISO35VLDMOS
1.8VIC/3.3/5V(TGO)
1.8VIC/3.3/24V(DGO)
1.8ULL/6/20V(TGO)
1.5/3.3/5VLDMOS(LPBaseline)
1.8ULL/6/32V(TGO)
1.5/5VBaseline
1.2V/3.3V/5VLDMOS(DG)(LPE)

WithHighVoltageGateoxide
3.3/13.5&18V(DG)
3.3/13.5,16V,18V(DG)
1.8ULL/6/20V(TGO)
1.8ULL/6/32V(TGO)

1.5V/6V/24Vor32V(TGO)

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BCDLite Data Sheet

(a)LDNMOSDevices

(b)LDPMOSDevices

PlatformProcess0.18mPlatformRdsonPerformance

LowRdsonLDNMOSPerformance

130nmBCD5VNMOSPerformance(AnalogFriendly,LowerRdson&GoodSOA)

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BCDLite Data Sheet

2
60VLDNMOSIVcurves(BVdss68V)(CurrentRdson:75mmm )
2
(Target~70mmmm )

60VLDPMOSIVcurves(BVdss~70V)
(CurrentRdson:180mmm2,Target~150mmm2

0.18m60VPerformance

SnapbackforIsolated30VPlatformNMOS

SnapbackSOAfor6,10,12,20,24and30VNM

SOACharacterizationinPlatform(0.18mIsolated30VPlatformData)

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BCDLite Data Sheet

SchotkydiodeForwardCharacteristics

ZenerdiodeCharacteristics(Linearscale)

(d)ZenerdiodeCharacteristics (Logscale)
(b)SchotkydiodeReverseCharacteristics

Schotky&ZenerDiodeCharacteristics

DCDC
DescriptionVinVoutIoutMax(mA)PeakEfficiency%AreawithRef(mm2)
1.0Vto5.6VBoost1.02.05.6
90
400
N/A
3.0Vto16VBoost3.0 163.016
85
2000
N/A
5.5Vto1.2VBuck 2.75.50.61.4
90
800
2

Vin

Description
1.2VMicroPowerRTC2.75.5
3.3V200mALowNoise2.05.5

LDO
Isupply(A)
Max(mA)
1.0
1.2
4.0
200
1.8 3.6
50
PowerManagementIPs
Vout

Iout

AreawithRef(mm2)
0.06
0.2

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BCDLite Data Sheet

Platform0.18m(1.8V)ULL
NMOSPMOS

Parameter

0.58
Vt(V)
0.61
sat
475
Id
190
BV dss (min/type)[V]3.5/4.53.5/5.4
5.0
Iof(max)[pA/m]
5.0
Iof(typ)[pA/m]
0.4
0.4
2

2.2
Rdson(typ)[m mm ]0.6

0.13mLP

1.5/1.2VNMOS1.5/1.2VPMOS

0.18m(1.8V)IC
NMOSPMOS
0.42
0.49
600
260
3.5/4.53.5/5.4
50
50
15
3.0
0.5
1.8

0.56
220/125
3/4.7
30
2.0
1.2

0.53
530/310
3/4
30
5/3
0.32

KeyLVCoreLogicDeviceElectricalParameters

0.13umTech.Node

0.18umTechnologyNode
Parameter

Isolated6V
N/PMOS

Vt(V)
Idsat[A/m]
BVdss[V]
Iof[pA/m]

0.76/0.790.79
600/315
550
16.5
12/10.5
0.5/0.5
0.5

0.72/0.820.85
520/320
380/200
32/24
19.5/21
0.5
0.5

Rdson(typ)
[mmm2]

2.5/7.5

8.7/21

6.4

21/52

60V*LDMOS
(N/P)Targets

Isolated5V
Iso30V*LDMOS
(N/P)TargetsN/PMOS(N/P)Targets

0.58/0.680.58/0.680.8/0.8
450/270480/240
250/150
31/32
48/48
37/39
0.5
<1.0
0.5

0.8/0.8
200/150
68/68
<1.0

0.75/06
550/350
11/9
0.5/3

0.7/0.7
370/200
36/36
<1.0

20/51

75/140

2.1/4

31/75

30/79

40/80

KeyHighVoltageElectricalParameters

MMCapacitorsTyp.Cap[fF/m2]Typ.VCC1[ppm/V]
Opion1
1.5
8
180nm Opion2
5
1.0

16VLDMOS20V(Iso)
Isolated10V
30V(Iso)
40V*LDMOS
8VNMOSLDMOS(N/P)(N/P)
LDMOS(N/P)LDMOS(N/P)LDMOS(N/P)

130nm

Opion3
Opion1
Opion2

0.85

1.0
1.5

10
11

28
29
o

KeyResistors/Sq.TCR1[ppm/
C]
P+PolyR
130nm N+PolyR
HiResPolyR
(Optional)
P+PolyR
N+PolyR
130nm HiResPolyR
(Optional)

Typ.TCC1[ppm/oC]
13
10

300
700
2000
1000
315
300
2000
1000

130
2200
1700
950
50
1100
1050
1000

PassiveDevices

Remarks
Nomaskadder
Nomaskadder
+1mask
+1mask
Nomaskadder
Nomaskadder
+1mask
+1mask

Typ.OpVoltage[V]
<=6
<=20
<=32
<=20

<=6