K E N D R I YA V I DYA L AYA

NARIMEDU MADURAI

P H Y S I C S I N V E S T I G AT O RY P R O J E C T

UNIJUNCTION TRANSISTOR

C RAM MUKILAN

PROJECT REPORT

UNIJUNCTION TRANSISTOR
In partial fulfillment of the requirements for AISSCE 201314 in

PHYSICS
Submitted by

C RAM MUKILAN
(

)
of class XII A1

Under the guidance of

MISS. I.SELVAMATHY (PGT - PHY)

CBSE AISSCE 2013-14

KENDRIYA VIDYALAYA
NARIMEDU MADURAI - 625002
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KENDRIYA VIDYALAYA
NARIMEDU MADURAI-625002

BONAFIDE CERTIFICATE
This is to certify that this project entitled
STUDY ON CHARACTERISTICS OF UNIJUNCTION
TRANSISTOR
Is a record of bonafide work carried out C.RAM MUKILAN
of class XII A1 in partial fulfillment of the requirements in
PHYSICS as prescribed by CBSE for AISSCE 2013-14 in
KENDRIYA VIDYALAYA, NARIMMEDU MADURAI 625
002.

DATE:
PRINCIPAL

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EXTERNAL EXAMINER
INTERNAL EXAMINER

DECLARATION

I hereby declare that the project work entitled

STUDY ON CHARACTERISTICS OF
UNIJUNCTION TRANSISTOR submitted for the
subject PHYSICS under the guidance of
MISS. I.SELVAMATHY (PGT - PHY), is a record of
original work done by me. I further declare that this
project record or any part of this has not been
submitted elsewhere for any other class.

Class:

Place:

Date:

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ACKNOWLEDEGEMENT
First and foremost, I praise and thank the Almighty,
from the depth of my heart, who has been as
unfailing source of strength, comfort and inspiration
in the completion of this project.
I wish to express my sincere thanks to
Shri.C.MUTHIAH, Principal Kendriya Vidyalaya,
Narimedu - Madurai for the successful outcome of this
project work.
I wish to express our deep and profound sense of
gratitude to my guide MISS. I. SELVAMATHY for her
expert and valuable guidance, comments and
suggestions.
Last, but not the least, I thank MY PARENTS, who
had been a part of me in every aspect of my life.
- Ram Mukilan C

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TABLE OF CONTENTS
INTRODUCTION
TRANSISTOR
UNIJUNCTION TRANSISTOR
CHARACTERISTICS OF UJT
OBJECTIVES
REQUIREMENTS
PROCEDURE
CIRCUIT DIAGRAM
OBSERVATION
RESULTS
GALLERY
BIBLIOGRAPHY
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INTRODUCTION
The discovery of electrons was a landmark in Physics, which is the reason
for the later development of physics. Any device that worked on controlled flow of
electrons is called an Electronic device. The branch of physics that deals with the
electronic devices is called Electronics.
Semiconductors and their junctions are solid - state electronic devices that
posses conductivity and resistivity intermediate to that of conductors and insulators i.e.,
(=105 - 100 m and = 10-5 100 mho m-1).
They further helped in miniaturization of electronic devices. These
semiconductors are classified on basis of their chemical composition; they are Elemental
semiconductors (Si, Ge), Compound semiconductors (CdS, GaAs), Organic polymers
(Polyaniline, Polypyrrole).
The deliberate addition of impurity to increase the conductance (i.e., to
increase charge carriers) of a pure semiconductor is called Doping. The impurity is called
Dopants and the obtained semiconductor is called Doped or Extrinsic Semiconductor.
If a trivalent impurity is doped on a pure tetravalent semiconductor. The
obtained semiconductor is called P-type semiconductors (es are the charge carriers).

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If a pentavalent impurity is doped on a pure tetravalent semiconductor . The obtained

semiconductor is called N-type semiconductors (holes are the charge carriers).
Doping of both trivalent in one half and pentavalent impurity in other same
crystal forms a P-N junction diode, this non-ohmic device is used as rectifiers (to convert
AC to DC). Zener Diode and LEDs are examples of P-N junction Diodes.

TRANSISTORS
A Junction Transistor is three terminal solid state device obtained by
growing a thin section of p-type crystal between two n-type crystals or a n-type crystal
between two p-type crystals.
The transistors were first developed by J.Bardeen and W.H.Brattain of
Bell Telephone Laboratories, USA. A transistors have two junctions, one is forward
biased (low resistance) and the other is reverse biased (high resistance).The input is given
in low resistance and the output taken in high resistance, thus it Transfers signal between
resistors and so called Transistors.

B
P-N-P TRANSISTOR

B
N-P-N TRANSISTOR

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SYMBOLS OF TRANSISTORS
As discussed above a transistor has three terminal i.e., p-n-p or n-p-n. They are
Emitter

- This section supplies charge carriers. It is forward biased w.r.t base

Collector - This section collects the charges. It is always reverse biased w.r.t base
Base

- This forms the p-n junc. with emitter and collector. The B-E junction is
forward biased while B-C junction is reverse biased.

APPICATIONS OF TRANSISTORS:
Amplification
Electronic Switch
Integrated circuits (computers)
Oscillators

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UNIJUNCTION TRANSISTOR
A Unijunction transistor is a three terminal semiconductor switching device. It has a
unique characteristic that when it is triggered, the emitter current increases until it is
limited by emitter power supply.
CONSTRUCTION:
It consists of n-type silicon bar with an electrical connection on each end. The
leads to this connection are called base leads, base one B1 and base two B2.Between
the two bases, p-n junction is formed between a p-type emitter and the bar. The lead
to this junction is called the emitter lead E.
With only one p-n junction, the device is normally a form of diode. Because
the two base terminals are taken from one section of the diode, this device is also
called double based diode. The emitter is heavily doped and the n region is lightly
doped. For this reason, the resistance between the base terminals is very high when
the emitter lead is open.

Merits Of UJT:
i.

Low Cost Device.

ii.

Low power absorbing device

iii.

Long negative resistance

iv.

Reliable.

region

Applications Of UJT:
i.

Relaxation Oscillator

ii.

Overvoltage detector.

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CHARACTERISTICS OF UJT:
The graph shows the curve between the Emitter voltage (Ve) and Emitter
Current (Ie) for a UJT at a given Voltage VBB between the bases.This is called the Emitter
characteristics
i.

Initially when vE increases from zero,There is a leakage current. This

current is due to minorty carriers in the reverse biased diode.This is
called cutt off region.

ii.

After certain point ,the forward current IE flows with increase in VE

till it attain a point.This point is called Peak voltage.

iii.

After the peak voltage, VE decreases with increase in IE .This region is

called Negative resistance region.This region is more reliable.

iv.

The negative regions lasts until the valley point reached,After which
the device is driven to Saturation region.

UJT Characteristics curve

UJT CHARACTERISTICS
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OBJECTIVES:
To study the characteristics of the given Unijunction transistor and
determine Peak Voltage.

REQUIREMENTS:
The given UJT, Power supply, Resistor, Voltmeter, milliammeter and etc.,

PROCEDURE:
Make connections as per the given circuit diagram.
Adjust rheostat so that potential across the bases B1 and B2 is 2V
(VB1B2).
Adjust the other rheostat and note the reverse deflection point in A.
Start noting the corresponding IE value for VE.
Record the observation and plot the characteristic curve.

CIRCUIT DIAGRAM:

OBSERVATION:

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VB1B2 = 2v
VEB1 (v)

IE (mA)

RESULT:
The characteristics of UJT is studied and Peak Voltage is found to be

GALLERY
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BIBLIOGRAPHY
Principle of Electronics
&Rohit Mehta

V.K. Mehta

New Simplified Physics (Vol.2)

S.L. Arora

Concepts of Physics ( Vol.2)

H.C.Verma

DC Pandey

Understanding Physics
(Optics and Modern Physics)

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