Allegro Power Transistors

POWER TRANSISTORS
SANKEN ELECTRIC CO.,LTD. Bulletin No

T01EE0
( July,2001)
C AU T I O N / WA R N I N G
• The information in this publication has been carefully checked and is believed to be
accurate; however, no responsibility is assumed for inaccuracies.
• Sanken reserves the right to make changes without further notice to any products herein in
the interest of improvements in the performance, reliability, or manufacturability
of its products. Before placing an order, Sanken advises its customers to obtain the
latest version of the relevant information to verify that the information being relied upon
is current.
• Application and operation examples described in this catalog are quoted for the sole
purpose of reference for the use of the products herein and Sanken can assume no
responsibility for any infringement of industrial property rights, intellectual property
rights or any other rights of Sanken or any third party which may result from its use.
• When using the products herein, the applicability and suitability of such products for the
intended purpose or object shall be reviewed at the users responsibility.
• Although Sanken undertakes to enhance the quality and reliability of its products, the
occurrence of failure and defect of semiconductor products at a certain rate is inevitable.
Users of Sanken products are requested to take, at their own risk, preventative measures
including safety design of the equipment or systems against any possible injury, death, fires
or damages to the society due to device failure or malfunction.
• Sanken products listed in this catalog are designed and intended for the use as components
in general purpose electronic equipment or apparatus (home appliances, office equipment,
telecommunication equipment, measuring equipment, etc.).
Before placing an order, the user’s written consent to the specifications is requested.
• When considering the use of Sanken products in the applications where higher reliability
is required (transportation equipment and its control systems, traffic signal control
systems or equipment, fire/crime alarm systems, various safety devices, etc.), please
contact your nearest Sanken sales representative to discuss and obtain written confirmation
of your specifications.
• The use of Sanken products without the written consent of Sanken in the applications
where extremely high reliability is required (aerospace equipment, nuclear power control
systems, life support systems, etc.) is strictly prohibited.
• Anti radioactive ray design is not considered for the products listed herein.
• This publication shall not be reproduced in whole or in part without prior written approval
from Sanken.
Contents SANKEN POWER TRANSISTORS
Transistor Selection Guide..2 B1559............................47 C4138 ...........................91 C5333 .........................135
Reliability.........................6 B1560............................48 C4139 ...........................92 C5370 .........................136
Temperature Derating in B1570............................49 C4140 ...........................93 D1769 .........................137
Safe Operating Area.........9 B1587............................50 C4153 ...........................94 D1785 .........................138
Accessories.....................9 B1588............................51 C4296 ...........................95 D1796 .........................139
Switching Characteristics B1647............................52 C4297 ...........................96 D2014 .........................140
Test Circuit....................10 B1648............................53 C4298 ...........................97 D2015 .........................141
Symbols and Term...........10 B1649............................54 C4299 ...........................98 D2016 .........................142
A1186............................11 B1659............................55 C4300 ...........................99 D2017 .........................143
A1215............................12 B1685............................56 C4301 .........................100 D2045 .........................144
A1216............................13 B1686............................57 C4304 .........................101 D2081 .........................145
A1262............................14 B1687............................58 C4381/2 ......................102 D2082 .........................146
A1294............................15 C2023 ...........................59 C4388 .........................103 D2083 .........................147
A1295............................16 C2837 ...........................60 C4418 .........................104 D2141 .........................148
A1303............................17 C2921 ...........................61 C4434 .........................105 D2389 .........................149
A1386/A ........................18 C2922 ...........................62 C4445 .........................106 D2390 .........................150
A1488/A ........................19 C3179 ...........................63 C4466 .........................107 D2401 .........................151
A1492............................20 C3263 ...........................64 C4467 .........................108 D2438 .........................152
A1493............................21 C3264 ...........................65 C4468 .........................109 D2439 .........................153
A1494............................22 C3284 ...........................66 C4495 .........................110 D2557 .........................154
A1567............................23 C3519/A ........................67 C4511 .........................111 D2558 .........................155
A1568............................24 C3678 ...........................68 C4512 .........................112 D2560 .........................156
A1667/8.........................25 C3679 ...........................69 C4517/A......................113 D2561 .........................157
A1673............................26 C3680 ...........................70 C4518/A......................114 D2562 .........................158
A1693............................27 C3830 ...........................71 C4546 .........................115 D2589 .........................159
A1694............................28 C3831 ...........................72 C4557 .........................116 D2641 .........................160
A1695............................29 C3832 ...........................73 C4662 .........................117 D2642 .........................161
A1725............................30 C3833 ...........................74 C4706 .........................118 D2643 .........................162
A1726............................31 C3834 ...........................75 C4883/A......................119 SAH02 ........................163
A1746............................32 C3835 ...........................76 C4886 .........................120 SAH03 ........................164
A1859/A ........................33 C3851/A ........................77 C4907 .........................121 SAP09N ......................165
A1860............................34 C3852/A ........................78 C4908 .........................122 SAP09P ......................166
A1907............................35 C3856 ...........................79 C5002 .........................123 SAP10N ......................167
A1908............................36 C3857 ...........................80 C5003 .........................124 SAP10P ......................168
A1909............................37 C3858 ...........................81 C5071 .........................125 SAP16N ......................169
A2042............................38 C3890 ...........................82 C5099 .........................126 SAP16P ......................170
B1257............................39 C3927 ...........................83 C5100 .........................127 SAP Series
B1258............................40 C4020 ...........................84 C5101 .........................128 Application
Information................171
B1259............................41 C4024 ...........................85 C5124 .........................129
Discontinued Parts
B1351............................42 C4064 ...........................86 C5130 .........................130
Guide ........................176
B1352............................43 C4065 ...........................87 C5239 .........................131
B1382............................44 C4073 ...........................88 C5249 .........................132
B1383............................45 C4130 ...........................89 C5271 .........................133
B1420............................46 C4131 ...........................90 C5287 .........................134
1
Transistor Selection Guide
■ VCEO-IC
800 C3678 C3679 C3680 C5124
C4020 C4300 C4301
C4299 C5002
C4304 C5003
C4445
C4908
600 C5249 C4706
550 C4517 C4518 C3927
C4517A C4518A C4557
C5239 C5287
500 C3830 C3831
C4907
400 C4073 C3832 C4138 C3833 C4139 C4140
C4418 C3890 C4296 C4297 C4298
C4662 C4130 C5071 C4434
C5130 C4546
380 D2141
300 C2023
C5333
250 D2017
230 A1294 A1295
C3263 C3264
200 A1668 D2016 C5271 A1493 A1494
C4382 D2557 C3857 C3858
D2558
180 A1859A A1386A A1216
C4883A A1492 C2922
A1673
C3519A
C3856
C4388
Collector–Emitter Voltage VCEO(V)
160 A1215
A1386
C2921
C3519
150 A1667 B1559 A1186 B1570 A1303 B1647 B1648
A1859 B1587 B1560 D2401 A1860 B1649 D2561
C4381 D2389 B1588 C3284 D2560
C4883 D2438 C2837 C4886 D2562
D2390
D2439
140 A1695
A1909
C4468
C5101
120 D2015 D1769 C3834 A1694 B1259 B1382 B1383
D1785 C3835 A1908 D2081 B1420 D2083
D2045 C4153 C4467 D2082
C5100
110 B1659
B1685
B1686
B1687
D2489
D2641
D2642
D2643
100 B1258
80 C3852A A1488A A1693
C3851A A1725
D2014 A1726
A1907
C4466
C4511
C4512
C5099
60 C3852 A1262 A1568
A1488 B1351
B1257 B1352
C3179 C4065
C3851
D1796
50 C4495 A2042 A1567 C4131
C4024 A1746
C4064
40 C5370
2 3 4 5 6 7 8 10 12 14 15 16 17 18 25
Collector Current IC(A)
2
■ Transistors for Switch Mode Power Supplies (for AC80 – 130V input)
MT-25 FM20 MT–100 FM100

VCBO(V) VCEO(V) IC (A)
(TO220) (TO220F) (TO3P) (TO3PF)
250 200 5 C5271
C4073
5 C4418
C4662
C3832 C3890
7
C4130
500 400 10 C4138 C4296
C3833 C4297
12
C5071
C4139 C4298
15
C4434
18 C4140
5 C5130
400
7 C4546
600 6 C3830 C4907
500
10 C3831
600 3 C5249
■ Transistors for Switch Mode Power Supplies (for AC180 – 280V input)
MT-25 FM20 MT–100 FM100

VCBO(V) VCEO(V) IC (A)
(TO220) (TO220F) (TO3P) (TO3PF)
3 C5239 C4517(A)
900 550 5 C4518(A) C5287
(1000) 10 C3927 C4557
600 14 C4706
C4020 C4908
3 C3678 C4299
900 800 C4304 C4445
5 C3679 C4300
7 C3680 C4301
3
Transistors for Audio Amplifiers
■ Single Transistors
● Single Emitter
Part No. PC(W) VCEO(V) IC (A) hFE(min) fT(MHz) Package
2SA1725/2SC4511 30 FM20 (TO220F)
2SA1726/2SC4512 50 MT-25 (TO220)

80 6
2SA1693/2SC4466 60 MT-100 (TO3P)
2SA1907/2SC5099 60
FM100 (TO3PF)
2SA1908/2SC5100 75
120 8
2SA1694/2SC4467 80 MT-100 (TO3P)
50 20
2SA1909/2SC5101 80 140 10
FM100 (TO3PF)
2SA1673/2SC4388 85 180 15
2SA1695/2SC4468 100 140 10

MT-100 (TO3P)
2SA1492/2SC3856 130 180 15
2SA1493/2SC3857 150 15
200 MT-200 (2-screw mount)
2SA1494/2SC3858 200 17
● LAPT (Multi emitter for High Frequency)
2SA1860/2SC4886 80 14 50 FM100 (TO3PF)
2SA1186/2SC2837 100 150 10 60
2SA1303/2SC3284 125 14 50
2SA1386/2SC3519 130 160 MT-100 (TO3P)

40
50
2SA1386A/2SC3519A 130 180
15
2SA1294/2SC3263 130 230 35
2SA1215/2SC2921 150 160 50
2SA1216/2SC2922 200 180 40 MT-200 (2-screw mount)

17
2SA1295/2SC3264 200 230 35
● Transistors with built in temperature compensation diodes for audio amplifier
Part No. PC(W) VCEO(V) IC (A) hFE(min) Emitter Resistor(Ω)
SAP09P/SAP09N 80 150 10 5000 0.22
SAP10P/SAP10N 100 150 12 5000 0.22
SAP16P/SAP16N 150 160 15 5000 0.22
4
■ Darlington Transistors
2SB1686 100
30 FM20 (TO220F)
2SD2642 60
2SB1659 100
50 MT-25 (TO220)
2SD2589 60
110 6
2SB1685 100
60 MT-100 (TO3P)
2SD2641 60
2SB1687 100
60
2SD2643 60
FM100 (TO3PF)
2SB1587 65
75 8
2SD2438 80
2SB1559 65
80 150 10 MT-100 (TO3P)
2SD2389 80
5000
2SB1588 50
80
2SD2439 55
15 FM100 (TO3PF)
2SB1649 45
85 200
2SD2562 70
2SB1560 50
100 10
2SD2390 55
150 MT-100 (TO3P)
2SB1647 45
130 15
2SD2560 70
2SB1570 50
150 12
2SD2401 55
150 MT-200 (2-screw mount)
2SB1648 45
200 17
2SD2561 70
■ Temperature compensation Transistors and Driver Transistors

Part No. PC(W) VCEO(V) IC (A) hFE(min) fT(MHz) Package Remarks
2SC4495 25 50 3 500 40 Temperature compensation
2SC4883 150 Driver, Complement 2SA1859

20 2 60 120 FM20
2SC4883A 180 (TO220F) Driver, Complement 2SA1859A
2SA1859 –150 Driver, Complement 2SC4883

20 –2 60 60
2SA1859A –180 Driver, Complement 2SC4883A
5
Reliability
1. Definition of Reliability 4. Applications Considered on Reliability
The word reliablity is an abstract term which refers to the degree to a) The type and specifications of our transistors and semiconductor
which equipment or components, such as semiconductor devices, are devices vary depending on the application that will be required by
resistant to failure. Reliability can be and is often measured quantitatively. their intended use. Customer should, therefore, determine
Reliability is defined as “whether equipment or components (such as which type will best suit their purposes.
a semiconductor device) under given conditions perform the same at b) Note that high temperratures or long soldering periods must be avoid-
the end of a given period as at the beginning.” ed during soldering, as heat can be transmitted through external
leads into the interior. This may cause deterioration if the maximum
2. Reliability Function allowable temperature is exceeded.
In general, there are three types of failure modes in electronic com- c) When using the trasistor
Ma
ponents:
S ec
xA
under pulse operation or
ond
llo
1. Infant failure Max.Allowable
wa
ary wer
inductive load, the Safe
bl e
Current
Bre
Po
2. Random failure Operating Area (SOA) for
akd
Voltage Vceo(Max)
3. Wear-out failure
o
Collector Current Ic(A)
wn
the current and voltage must
Allowable
Loc
Max.
not be exceeded (Figure 2).
us
General Electronic
(a) Equipment or SOA(Safe Operating Area)
Components
(b)
Failure Rate (λ)
Semiconductor
Devices
Estimation
Collector-Emitter Voltage Vce(V)
Figure 2 SOA
Initial Random or Wear-out d) The reliability of transistors and semiconductor devices is greatly
Failure Chance Failure Failure
affected by the stress of junction temperature. If we accept in general
Time (t)
proceed in the form of Arrhenius equation, the relationship between
Figure 1 Bath Tub Curve the junction temperature Tj and lifespan L can be expressed with
These three types of failure describe “bathtub curve” shown in the following empirical formula
Figure 1. Infant failures can be attributed to trouble in the production n L = A+ B ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅(4)
process and can be eliminated by aging befor shipment to customers, Tj
stricter control of the production process and quality control measures. It is, hence, very important to derate the junction temperature to
Semiconductor devices such as transistors, unlike electronic equipment, assure a high reliability rate.
take a considerable amount of time to reach the stage where wear-out
failure begins to occur. And, as shown in Figure 1 (b), they also last 5. Reliability Test
much longer than electronic equipment. This shows that the longer they Sanken bases its test methods and conditions on the following
are used the more stable they actually become. standards. Tests are conducted under these or stricter conditions,
The reduction that occurs in random failures can be approximated by The details of these are shown in Table 1.
Weibull distribution, logarithmic normal distribution, or gamma distri- • MIL-STD-202F (Test method for electrical and electronic com-
bution, but Weibull distribution best expresses the phenomenon that ponents)
occurs with transistors. • MIL-STD-750C (Test method for semiconductor equipment)
• JIS C 7021 (Endurance test and environmental test method for
3. Quantitative Expression of Reliability individual semiconductor devices)
While there are many ways to quantitatively express reliability, two • JIS C 7022 (Endurance test and environmental test method for
criteria, failure rate and life span, are generally used to define the integrated circuits of semiconductors)
reliability of semiconductors such as transistrors.
a) Failure Rate (FR) 6. Quality Assurance
Failure rate often refers to instantaneous failures or λ (t). In general To ensure high quality and high reliability, quality control and produc-
of reliability theory, however, the cumulative failure rate, or Relia- tion process control procedures are executed from the receipt of parts
bility Index, is through the entire production process. Our quality assurance system
r(t) is shown in Figure 3.
F⋅R= ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅(1)
N⋅t
Where N = Net quantity used, and
r(t) = Net quantitiy failed after t hours
If we assign t the arbitrary
F ⋅ R = r × 100 (%/1,000 hours)⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅(2)

N
In situations where the cumulative failure rate is small, failure is ex-
pressed in units of one Fit, 10-9 (failures/hours).
b) Life Span(L)
Life Span can be expressed in terms of average lifespan or as Mean
Time Between Failure (MTBF), but assuming that random failure
is shown by the Index Distribution [λ (t) = constant], then Life Span
or L can be shown by the equation
1
L = ⋅ (hours)⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅(3)
F R
6
Reliability
Table 1: Test Methods and Conditions
Test Details of the Testing Method LTPD(%)
Collector dissipation with maximum junction temperature is applied continuously at

Continuous Operations Test *5/1000hrs
room temperature to judge lifespan and reliability under transistor operating conditions.
Power equal to that used in the Continuous Operations Test is applied intermittently 5/1000hrs
Intermittent Operation Test
to test the transistor’s lifespan and reliability under on and off conditions.
High Temperature Storage Test Confirms the highest storage temperature and operating temperature of transistors. 5/1000hrs
Low Temperature Storage Test Confirms the lowest storage temperature of transistors. 5/1000hrs
Tested at RH=85% and TA=85°C for the effects of the interaction between
Moisture Resistance Test temperature and humidity, and the effects of surface insulation between electrodes 5/1000hrs
and high temperature/high humidity.
Tested at Tstg min – Room temp. – Tstg max – Room temp. for 10 cycles (one cycle
Heat Cycle Test 30 min. –5 min. –30 min. –5 min.) to detect mechanical faults and characteristic 5
changes caused by thermal expansion and shrinkage of the transistor.
Tested at 100°C (5 min.), 25°C (within 3 sec.), 0°C (5 min.) for 10 cycles to check for
Heat Shock Test mechanical faults and characteristic changes caused by thermal expansion and 5
shrinkage of transistor.
Tested at 260 ± 5°C, 10 ± 1 sec, by dipping lead wire to 1.5mm from the seating plane
Soldering Heat Test in solder bath to check for characteristic changes caused by drastic temperature rises 5
of exterior lead wire.
Tested at amplitude 1.52mm, vibration frequency 10-55 Hz in directions of X, Y, Z, for
Vibrations Test 2 hours each (total 6 hours) to check for characteristic changes caused by vibration 5
during operation and transportion.
Tested by dropping 10 times from 75 cm height to check for mechanical endurance
Drop Test 5
and characteristic changes caused by shock during handling.
∗ Reliability Standard : 60%
Figure 3 Quality Assurance System
Material Purchasing
Incoming Inspection Physical and Chemical Inspection
Production Process Quality Control

Production Process Control
Specialized Tests for all units
Marking Periodical Quality Assurance Test

Packing 1. Operational Life (continuous) Test
2. Operational Life (intermittent) Test
3. High Temperature Storage Test
Shipping Inspection 4. Low Temperature Storage Test
5. Moisture Resistance Test
Shipment 6. Heat Cycle Test
7. Heat Shock Test
8. Soldering Heat Test
9. Vibaration Test
10. Drop Test
7
Reliability
7. Notes Regarding Storage, Characteristic Tests, and Handling
Since reliability can be affected adversely by improper storage
environment and handling methods during Characteristic tests,
please observe the following cautions.
a) Cautions for Storage
1. Ensure that storage conditions comply with the standard
temperature (5 to 35°C) and the standard relative humidity
(arround 40 to 75%) and avoid storage locations that
experience extreme changes in temperature or humidity.
2. Avod locations where dust or harmful gases are present,
and avoid direct sunlight.
3. Reinspect for rust in leads and solderbility that have been
stored for a long time.
b) Cautions for Characteristic Tests and Handling
1. When characteristic tests are carried out during inspection
testing and other standard test periods, protect the transistor
from surges of power from the testing device, shorts between
the transistor and the heatsink
c) Silicone Grease
When using a heatsink, please coat the back surface of the
transistor and both surfaces of the insulating plate with a thin
layer of silicone grease to improve heat transfer between the
transistor and the heatsink.
Recommended Silicone Grease
• G-746 (Shin-Etsu Chemical)
• YG6260 (GE Toshiba Silicone)
• SC102 (Dow Corning Toray Silicone)
d) Torque when Tightening Screws
Thermal resistance increases when tightening torque is small,
and radiation effects are decreased. When the torque is too
high, the screw can cut, the heatsink can be deformed, and/or
distortion can arise in the product’s frame. To avoid these
problems, Table 2 shows the recommended tightening torques
for each product type.
Table 2. Screw Tightening Torques
Package Screw Tightening Torque
MT25 (TO-220) 0.490 to 0.686 N · m (5 to 7kgf · cm)
FM20 (TO-220 Full Mold) 0.490 to 0.686 N · m (5 to 7kgf · cm)
MT100 (TO-3P) 0.686 to 0.822 N · m (7 to 9kgf · cm)
FM100 (TO-3P Full Mold) 0.686 to 0.822 N · m (7 to 9kgf · cm)
MT200 ( two-point mount) 0.686 to 0.822 N · m (7 to 9kgf · cm)
2GR ( one-point mount) 0.686 to 0.822 N · m (7 to 9kgf · cm)
e) Soldering Temperature
In general, the transistor is subjected to high temperatures when
it is mounted on the printed circuit board, whether from flow solder
from a solderbath, or, in hand operations from a soldering iron.
The testing method and test conditions (JIS-C-7021 standards)
for a transistor’s heat resistance during soldering are:
At a distance of 1.5mm from the transistor’s main body,
apply 260°C for 10 seconds, and 350°C for 3 seconds.
However, please stay well within these limits and for as short
a time as possible during actual soldering.
8
Reliability
■ Temperature Derating in Safe Operating Area
Flange (case) temperature is typically described as 25°C, but it must be derated subject to the operating
temperature.
This derating curve is determined by manufacturing conditions of devices, materials used etc. and in case of a
silicon transistor, breakdown voltage and DC Current Gain are significantly deteriorated in the temperature
range of 260°C to 360°C.
Hence, the collector current must be derated by using the derating curve in Fig.2 where the breakdown point is
set at 260°C.
Pc 100
lim
itin
Derating coefficient DF (%)

ga
Collector Current Ic (A)
re S/
a B
lim
Pc
itin
S/
B
Collector Current
lim
50 ar
lim
ea
itin
itin
ga
ga
rea
rea
Tc=25°C
0
0 50 100 150 200 250 300
Collector-Emitter Voltage VCE (V)
Case Temp Tc (°C)
Fig.1 Safe Operating Area Fig.2 Derating Curve of Safe Operating Area
Derating coefficient is obtained from temperature in Fig.2 and it must be applied to the current value of the safe
operating area in order to obtain the derated current.
■ Accessories
✩ Sanken Transistors do not include accessories. Accessories may be attached at a cost if requested.
✩ Sanken transistor case is a standard size, and can be used with any generally sold accessories.
• Insulater: Mica, with a thickness of 0.06mm, +0.045 –0.005 allowance • Insulation Bush for MT-25 (TO220)
Type Name:Mold(10)Mica Type Name:Mold(14)Mica Type Name:Mold(9)Mica
ø3.2 +0.1
–0
2–ø3.2 +0.1
–0
ø3.75 +0.1
–0
12.0±0.1
±0.1
10.0
6.0±0.2
3.7±0.1
+0.2
7.0
24.0±0.1
14.0±0.1
3.1
±0.1
–0
20.0
2.5±0.2 1.5±0.2
5.0±0.1
7.0 ±0.1
24.38±0.1
19.4±0.1 R0.5 +0.2
24.0 –0 R0.5 39.0±0.1 R0.5
9
Switching Characteristics
■ Typical Switching Characteristics (Common Emitter)
VCC RL IC VB2 VBB1 VBB2 IB1 IB2 tr tstg tf
(V) (Ω) (A) (V) (V) (V) (A) (A) (µs) (µs) (µs)
■Switching Characteristics Test Circuit/Measurement Wave Forms

PNP +VBB2
IB2
0 IC –VCC Base
20µs Current 0 0
R2
IB1
IB2
D.U.T Collector
Current 0.1IC 0
50µs IB1
IC
0
0.9IC
R1
ton tstg tf
–VBB1 RL
GND 0
NPN +VBB1
IB2
0 IC VCC Base
50µs R1 Current 0 0
IB1
IB1
D.U.T Collector 0.9IC
Current 0
IB2
IC
0.1IC
0 R2
20µs ton tstg tf
–VBB2 RL
GND 0
Symbols
Symbol Item Definition
VCBO Collector-Base Voltage DC Voltage between Collector and Base when Emitter is open
VCEO Collector-Emitter Voltage Voltage between Collector and Emitter when Base is open and voltage is reversely applied to Collector junction
VEBO Emitter-Base Voltage DC voltage between Emitter and Base when Collector is open
IC Collector Current DC current passing through Collector electrode
IB Base Current DC current passing through Base electrode
PC Collector Power Dissipation Power consumed at Collector junction
Tj Operating Junction Temperature Maximum allowable temperature value at absolute maximum ratings
Tstg Storage Temperature Maximum allowable range of ambient temperature at non-operation
ICBO Collector Cutoff Current Collector current when Emitter is open and a specified reverse voltage is applied between Collector and Base
IEBO Emitter Cutoff Current Emitter current when Collector is open and a specified reverse voltage is applied between Emitter and Base
V(BR)CEO Collector-Emitter Saturation Voltage Breakdown voltage between Collector and Emitter when Base is open
hFE DC Current Gain Ratio of DC output current and DC input current at a specified voltage and current (Emitter common)
VCE(sat) Collector-Emitter Saturation Voltage DC voltage between Collector and Emitter under specified saturation conditions
VBE(sat) Base-Emitter Saturation Voltage DC voltage between Base and Emitter under specified saturation conditions
VFEC Emitter-Collector Diode Forward Voltage Diode forward voltage between Emitter and Collector when Base is open
fT Cut-off Frequency Frequency at the specified voltage and current where hFE is 1 (0dB)
Cob Collector Junction capacitance Junction capacitance between collector and Base at a specified voltage and frequency
• Ta=25°C unless otherwise specified.
10
LAPT 2SA1186
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2837) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit
15.6±0.4 4.8±0.2
5.0±0.2
µA
2.0
1.8
VCBO –150 V ICBO VCB=–150V –100max 9.6 2.0±0.1
VCEO –150 V IEBO VEB=–5V –100max µA
19.9±0.3
VEBO –5 V V(BR)CEO IC=–25mA –150min V
4.0
a
IC –10 A hFE VCE=–4V, IC=–3A 50min∗ ø3.2±0.1
b
IB –2 A VCE(sat) IC=–5A, IB=–0.5A –2.0max V
PC 100(Ta=25°C) W fT VCE=–12V, IE=1A 60typ MHz 2
4.0max
20.0min
Tj 150 °C COB VCB=–80V, f=1MHz 110typ pF 3
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2
-0.1 0.65 +0.2
-0.1
5.45±0.1 5.45±0.1 1.4

■Typical Switching Characteristics (Common Emitter) B C E
VCC RL IC VB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g

(V) (Ω) (A) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
–60 12 –5 5 –500 500 0.25typ 0.8typ 0.2typ b. Lot No.
I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =–4V)
–10 –3 –10
Collector-Emitter Saturation Voltage V C E (s at) (V )
A
A 60m
A
m –1
m
00
00
–2 mA
–4
–8 –120 –8
Collector Current I C (A)

A
– 0m
1 0
–8 0m A –2
–6 –6
–60mA
I C =–10A
p)
–4 –40mA –4
)
p)
Tem
emp
Tem
–1
eT
se
se
(Ca
Cas
I B =–20m A
Ca
–2 –2
˚C
˚C (
C(
–5A
125
25˚
–30
0 0 0
0 –1 –2 –3 –4 0 –0.5 –1.0 –1.5 –2.0 0 –1 –2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a ( ˚ C/W)
(V C E =–4V) (V C E =–4V)
300 200 3
125˚C
DC C urrent G ain h FE
DC Curr ent Gain h FE
Transient Thermal Resistance
25˚C
Typ 100
100 1
–30˚C
50 0.5
50
20 30 0.2
–0.02 –0.1 –0.5 –1 –5 –10 –0.02 –0.1 –0.5 –1 –5 –10 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
80 –30 100
M aximum Power Dissip ation P C (W)
Cu t-of f Fr eque ncy f T ( MH Z )
–10
60
Collecto r Cur rent I C (A)
W
10
ith
yp
ms
In
T –5
fin
D
C
ite
he
40 50
at
si
nk
–1
20
Without Heatsink
–0.5 Natural Cooling
Without Heatsink
0 –0.2 3.5
0
0.02 0.1 1 10 –2 –10 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
11
LAPT 2SA1215
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-200
VCBO –160 V ICBO VCB=–160V –100max µA 36.4±0.3 6.0±0.2
24.4±0.2
VCEO –160 V IEBO VEB=–5V –100max µA 2-ø3.2±0.1 9
2.1
7
IC –15 A hFE VCE=–4V, IC=–5A 50min∗
21.4±0.3
a
IB –4 A VCE(sat) IC=–5A, IB=–0.5A –2.0max V b
PC 150(Tc=25°C) W fT VCE=–12V, IE=2A 50typ MHz
2
4.0max
20.0min
Tj 150 °C COB VCB=–10V, f=1MHz 400typ pF
3
0.65 +0.2
-0.1
-0.1
5.45±0.1 5.45±0.1 3.0 +0.3

■Typical Switching Characteristics (Common Emitter)
-0.1
B C E

(V C E =–4V)
–16 –3 –15
A A A A
m 0m 0m 0m A
50 –60 –50 –40 –30
0m
–7
mA
–200

–12
–1 50 m A –2 –10
–10 0mA
–8
p)
mp)
emp
em
eT
e Te
se T
–50mA –1 –5
Cas
I C =–10A
Cas
(Ca
–4
˚C (
˚C (
25˚C
125
I B =–20mA –5A
–30
0 0 0
0 –1 –2 –3 –4 0 –0.2 –0.4 –0.6 –0.8 –1.0 0 –1 –2

θ j- a ( ˚C/W)
(V C E =–4V) (V C E =–4V)
200 200 2
125˚C
1
100 Typ
100 25˚C
0.5
50 –30˚C
50
10 30 0.1
–0.02 –0.1 –0.5 –1 –5 –10 –15 –0.02 –0.1 –0.5 –1 –5 –10 –15 1 10 100 1000 2000

(V C E =–12V)
80 –40 160
Ma xim um Powe r Dissipat io n P C (W)
10
Cut- off F req uency f T ( MH Z )
60 120
s
–10
Collector Curr ent I C (A)
D
p C
ith
Ty
In
–5
fin
ite
40 80
he
at
si
nk
–1
20 40
Without Heatsink
Without Heatsink
5
0 –0.2 0
0.02 0.1 1 10 –2 –10 –100 –200 0 25 50 75 100 125 150
12
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2922)
LAPT 2SA1216
Application : Audio and General Purpose
Symbol Ratings Unit SymboI Conditions Ratings Unit
36.4±0.3 6.0±0.2
VCBO –180 V VCBO VCB=–180V –100max µA
24.4±0.2 2.1
7
30min∗
21.4±0.3
IC –17 A hFE VCE=–4V, IC=–8A a
PC 200(Tc=25°C) W fT VCE=–12V, IE=2A 40typ MHz 2
4.0max
20.0min
0.65 +0.2
Tstg –55 to +150 °C ∗hFE Rank O(30 to 60), Y(50 to 100), P(70 to 140), G(90 to 180) 1.05 +0.2
-0.1
-0.1
5.45±0.1 5.45±0.1 3.0 +0.3

-0.1

(V) (Ω) (A) (V) (A) (A) (µs) (µs) (µs) a. Part No.
I C – V CE Characteristics (Typical) V CE ( sa t ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =–4V)
–17 –3 –17
5A
A mA
A
m 0
–40
m
–1
00
–1.
00
–15 –7 –15
–5
A
–3 00 m

–2 00 mA –2
–10 –10
–150mA
p)
em
p)
)
emp
e T
–100mA
Tem
Cas
e T
–1
ase
–5 –5
˚C(
Cas
C(C
–50mA
125
˚C(
I C =–10A
25˚
–30
I B =–20mA
–5A
0 0 0
0 –1 –2 –3 –4 0 –0.2 –0.4 –0.6 –0.8 –1.0 0 –1 –2 –2.4

θ j - a (˚ C/W)
(V C E =–4V) (V C E =–4V)
300 200 2
125˚C
DC Cur rent Gain h F E
DC Curr ent Gain h F E
100 1
25˚C
100
Typ
–30˚C
50 0.5
50
10 10 0.1
–0.02 –0.1 –0.5 –1 –5 –10 –17 –0.02 –0.1 –0.5 –1 –5 –10 –17 1 10 100 1000 2000

(V C E =–12V)
60 –50 200
M aximum Power Dissipa ti on P C (W)
10
160
m
Cu t-off Fre quen cy f T (MH Z )
DC
–10
ith
Collect or Cur ren t I C (A)
T yp
40
In
fin
–5 120
ite
he
at
si
nk
80
20
–1
Without Heatsink 40
–0.5
Natural Cooling
Without Heatsink
5
0 –0.2 0
0.02 0.1 1 10 –2 –10 –100 –300 0 25 50 75 100 125 150
13
2SA1262
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-25(TO220)
10.2±0.2 4.8±0.2
3.0±0.2
VCBO –60 V ICBO VCB=–60V –100max µA 2.0±0.1

16.0±0.7
IC A hFE VCE=–4V, IC=–1A 40min
8.8±0.2
a ø3.75±0.2
–4
–0.6max V b
IB –1 A VCE(sat) IC=–2A, IB=–0.2A
PC 30(Tc=25°C) W fT VCE=–12V, IE=0.2A 15typ MHz 1.35
4.0max
12.0min
Tstg –55 to +150 °C 0.65 +0.2
-0.1
■Typical Switching Characteristics (Common Emitter) 2.5

B C E
2.5 1.4
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.6g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
–20 10 –2 –10 5 –200 200 0.25typ 0.75typ 0.25typ b. Lot No.

(V C E =–4V)
–4 –1.5 –4
A A
0m –60m
–50m A
–8
–40m A

–3 –3
–30mA –1.0
–2 –20mA –2
)
emp
p)
mp)
e Tem
eT
e Te
Cas
–0.5
(Cas
(Cas
–10mA
˚C (
–1 –1
125
–30˚C
25˚C
I C =–3A
I B =–5mA
–2A
–1A
0 0 0
0 –1 –2 –3 –4 –5 –6 –0.1 –0.5 –0.1 –0.5 –1 0 –0.5 –1.0 –1.5

θ j- a ( ˚ C/W)
(V C E =–4V) (V C E =–4V)
500 200 5
125˚C
D C Cur r ent Gai n h F E
100 25˚C
Typ
–30˚C
100
50
50
1
20 20 0.7
–0.01 –0.1 –0.5 –1 –4 –0.02 –0.1 –1 –4 1 10 100 1000

(V C E =–12V)
60 –10 30
1m
–5
M aximum Po wer Dissipat io n P C (W)
50
s
10
m
Cut- off F req uency f T (M H Z )
10
W
0m
ith
Collector Cur rent I C (A)
D
s
40 C 20
In
Typ
fin
ite
he
30 –1
at
si
nk
–0.5 Without Heatsink

20 10
Natural Cooling
10
Without Heatsink
2
0 –0.1
0
0.005 0.01 0.05 0.1 0.5 1 3 –2 –5 –10 –50 –100 0 25 50 75 100 125 150
Emitter C urrent I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
14
LAPT 2SA1294
15.6±0.4 4.8±0.2
5.0±0.2
µA
2.0
1.8

VEBO V V(BR)CEO
19.9±0.3
–5 IC=–25mA –230min V
4.0
a
b
4.0max
20.0min
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), Y(70 to 140) 1.05 +0.2
-0.1 0.65 +0.2
-0.1
5.45±0.1 5.45±0.1 1.4


(V C E =–4V)
Collector-Emitter Saturation Voltage V C E (sa t) (V )
–15 – 3 –15
5A
A
.0A
. .0 A
.0
–1 –1
–2
mA
–3
00
–5

A
0m
–30
–10 mA –2 –10
– 200
–1 00 mA
)
mp
mp)
)
emp
eTe
eTe
–5 –1 –5
seT
Cas
–50mA I C =–10A
Cas
(Ca
˚C (
˚C (
125
25˚C
–30
I B =–20mA
–5A
0 0 0
0 –1 –2 –3 –4 0 –0.5 –1.0 –1.5 –2.0 0 –1 –2 –2.5

θ j- a ( ˚ C/W)
(V C E =–4V) (V C E =–4V)
200 200 3
125˚C
100 Typ 100 25˚C

1
50 50 –30˚C
0.5
10 10 0.1
–0.02 –0.1 –0.5 –1 –5 –10 –15 –0.02 –0.1 –0.5 –1 –5 –10 –15 1 10 100 1000 2000

(V C E =–12V)
60 –40 130
10
m
s
Ma ximum Po we r Dissipa ti on P C (W)
–10
100
Cut-o ff F requ ency f T (MH Z )
DC
W
ith
–5
40
In
p
fin
Ty
ite
he
at
si
–1
nk
50
20 –0.5
Without Heatsink
Natural Cooling
–0.1
Without Heatsink
3.5
0 –0.05 0
0.02 0.1 1 10 –3 –10 –100 –300 0 25 50 75 100 125 150
15
LAPT 2SA1295
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3264) Application : Audio and General
µA 36.4±0.3 6.0±0.2
VCBO –230 V ICBO VCB=–230V –100max
24.4±0.2
2.1
7
IC A hFE VCE=–4V, IC=–5A 50min∗
21.4±0.3
–17 a
2
4.0max
20.0min
3
-0.1
0.65 +0.2
-0.1
5.45±0.1 5.45±0.1 3.0 +0.3

-0.1

B C E

(V C E =–4V)
Collector-Emitter Saturation Voltage V C E (s a t) (V )
–17 – 3 –17
0A A
A
. .5 A
–1
.0
–2 – 1.0
–3
–15 –15
0 mA
–50

0mA
–30 –2
–10 mA –10
–200
p)
mp)
em
–1 00 mA
eT
e Te
–1
Cas
–5 I C =–10A –5
Cas
–50mA
˚C (
˚C (
125
25˚C
–30
I B =–20mA –5A
0 0 0
0 –1 –2 –3 –4 0 –0.5 –1.0 –1.5 –2.0 0 –0.8 –1.6 –2.4 –3.2

θ j- a ( ˚C/W)
(V C E =–4V) (V C E =–4V)
200 200 2
125˚C
DC Cur rent Gain h FE
100 Typ 100 25˚C 1
50 50 –30˚C 0.5
10 10 0.1
–0.02 –0.1 –0.5 –1 –5 –10 –17 –0.02 –0.1 –0.5 –1 –5 –10 –17 1 10 100 1000 2000

(V C E =–12V)
60 –40 200
10
m
s
–10 D 160
C
–5
ith
40
In
p
fin
Ty 120
ite
he
at
–1
si
nk
–0.5 80
20
Without Heatsink
Natural Cooling
40
–0.1
Without Heatsink
5
0 –0.05 0
0.02 0.1 1 10 –3 –10 –100 –300 0 25 50 75 100 125 150
16
LAPT 2SA1303
15.6±0.4 4.8±0.2
5.0±0.2
2.0
1.8
VCBO –150 V ICBO VCB=–150V –100max µA 9.6 2.0±0.1
19.9±0.3
4.0
a ø3.2±0.1
IC –14 A hFE VCE=–4V, IC=–5A 50min
b
4.0max
20.0min
-0.1 0.65 +0.2
-0.1
5.45±0.1 5.45±0.1 1.4


(V C E =–4V)
–3 –14
A A
A
–6 mA
m m mA
m
00 00 00
00
–3
00
–5 –4 mA
–200
–7
–12

–1 50 m A
–10
–2
–10 0mA
–8
p)
Tem
)
emp
p)
se
Tem
eT
(Ca
–50mA –5
Cas
–1
ase
˚C
I C =–10A
˚C (
–4
125
C (C
–30
25˚
I B =–20mA –5A
0 0 0
0 –1 –2 –3 –4 0 –0.2 –0.4 –0.6 –0.8 –1.0 0 –1 –2

θ j- a ( ˚C/W)
(V C E =–4V) (V C E =–4V)
200 200 3
125˚C
100 Typ 25˚C 1

100
–30˚C 0.5
50
50
20 30 0.1
–0.02 –0.1 –0.5 –1 –5 –10 –14 –0.02 –0.1 –0.5 –1 –5 –10 –14 1 10 100 1000 2000

(V C E =–12V)
80 –40 130
1m
Maxim um Power Dissip ation P C (W)

10
s
10
60 100
0m
Cut- off F req uency f T (MH Z )
–10
W
Co lle ctor Cu rr ent I C (A)
ith
D
C
p
In
Ty
fin
–5
ite
he
40
at
si
nk
50
–1
20 Without Heatsink
Natural Cooling
–0.5
Without Heatsink
3.5
0 –0.2 0
0.02 0.1 1 10 –3 –10 –100 –200 0 25 50 75 100 125 150
17
LAPT 2SA1386/1386A
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3519/A) Application : Audio and General Purpose
Ratings Ratings
Symbol Unit Symbol Conditions Unit 4.8±0.2
2SA1386 2SA1386A 2SA1386 2SA1386A 15.6±0.4
5.0±0.2
2.0
1.8
9.6 2.0±0.1
VCBO –160 –180 V –100max –100max µA
ICBO
VCEO –160 –180 V VCB= –160 –180 V
19.9±0.3
µA
4.0
VEBO –5 V IEBO VEB=–5V –100max a ø3.2±0.1
IC –15 A V(BR)CEO IC=–25mA –160min –180min V b
IB –4 A hFE VCE=–4V, IC=–5A 50min∗

2
4.0max
VCE(sat)
20.0min
PC 130(Tc=25°C) W IC=–5A, IB=–0.5A –2.0max V
3
Tj 150 °C fT VCE=–12V, IE=2A 40typ MHz
1.05 +0.2
-0.1 0.65 +0.2
-0.1
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 500typ pF
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 5.45±0.1 5.45±0.1 1.4
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.

(V C E =–4V)
–15 –3 –15
A A
m m –3 00 m A
A
0
00 40
m
–5 –
00
–7

–200mA
–10 –2 –10
–150mA
–100mA
p)
mp)
mp)
em
e Te
eT
e Te
–5 –1 –5
Cas
(Cas
(Cas
–50mA
˚C (
25˚C
–30˚C
I C =–10A
I B =–20mA 125
–5A
0 0 0
0 –1 –2 –3 –4 0 –0.2 –0.4 –0.6 –0.8 –1.0 0 –1 –2

θ j - a (˚C /W )
(V C E =–4V) (V C E =–4V)
300 200 3
125˚C
100
1
100 25˚C
Typ
–30˚C 0.5
50
10 20 0.1
–0.02 –0.1 –0.5 –1 –5 –10 –15 –0.02 –0.1 –0.5 –1 –5 –10 –15 1 10 100 1000 2000

(V C E =–12V)
60 –40 130
10
ms
Ma xim um Powe r Dissipation P C ( W)
–10 DC
100
Cut-o ff Fr eque ncy f T (MH Z )
–5
ith
Collecto r Cur ren t I C ( A)
p
40 Ty
In
fin
ite
he
at
–1
si
nk
Without Heatsink
–0.5 Natural Cooling 50
20
1.2SA1386
2.2SA1386A
–0.1
1 Without Heatsink
2 3.5
0 –0.05 0
0.02 0.1 1 10 –3 –10 –50 –100 –200 0 25 50 75 100 125 150
18
2SA1488/1488A
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3851/A) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20 (TO220F)
Ratings Ratings
2SA1488 2SA1488A 10.1±0.2
4.0±0.2
2SA1488 2SA1488A 2.8 c0.5
VCBO –60 –80 V –100max –100max µA
ICBO
8.4±0.2
VCEO –60 –80 V VCB= –60 –80 V
16.9±0.3
VEBO –6 V IEBO VEB=–6V –100max µA ø3.3±0.2
a
IC –4 V(BR)CEO IC=–25mA
0.8±0.2
A –60min –80min V b
IB –1 A hFE VCE=–4V, IC=–1A 40min
±0.2
3.9
PC 25(Tc=25°C) W VCE(sat) IC=–2A, IB=–0.2A –0.5max V
13.0min
1.35±0.15
Tj 150 °C fT VCE=–12V, IE=0.2A 15typ MHz
1.35±0.15
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 90typ pF 0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2
B C E

(V C E =–4V)
–4 –1.5 –4
A A
0m –60m
–50m A
–8
–40m A

–3 –3
–30mA –1.0
–2 –20mA –2
)
emp
p)
mp)
e Tem
eT
e Te
Cas
–0.5
(Cas
(Cas
–10mA
˚C (
–1 –1
–30˚C
125
25˚C
I C =–3A
I B =–5mA
–2A
–1A
0 0 0
0 –1 –2 –3 –4 –5 –6 –0.1 –0.5 –0.1 –0.5 –1 0 –0.5 –1.0 –1.5

θ j - a (˚ C/W)
(V C E =–4V) (V C E =–4V)
500 200 5
125˚C
100 25˚C
Typ
–30˚C
100
50
50
1
20 20 0.7
–0.01 –0.1 –0.5 –1 –4 –0.02 –0.1 –1 –4 1 10 100 1000

(V C E =–12V)
60 –10 30
Natural Cooling
1m Silicone Grease
–5 100ms s Heatsink: Aluminum
M aximu m Power Dissi pation P C (W)
50 10
m in mm
s
Cu t-off Fre quen cy f T ( MH Z )
40 DC 20
Typ W
ith
–1 In
fin
30 ite
150x150x2
–0.5 he
1 00x 1 0 at
Without Heatsink 0x si
20 2 nk
Natural Cooling 10
50x50x2
10
–0.1
Without Heatsink
2
0 –0.05
0
0.005 0.01 0.05 0.1 0.5 1 3 3 5 10 50 100 0 25 50 75 100 125 150
19
2SA1492
15.6±0.4 4.8±0.2
5.0±0.2
2.0
1.8
VCBO –180 V ICBO VCB=–180V –100max µA 9.6 2.0±0.1
19.9±0.3
4.0
a
50min∗
ø3.2±0.1
IC –15 A hFE VCE=–4V, IC=–3A
b
PC 130(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 2
4.0max
20.0min
-0.1 0.65 +0.2
-0.1
5.45±0.1 5.45±0.1 1.4


(V C E =–4V)
–15 – 3 –15
6A
–0.
A
–1
4A
–0.

A
– 0 .2
–10 –2 –10
–0 .1 A
mp)
Temp)
Temp
e Te
–5 –50mA –1 –5
Cas
(Case
(Case
˚C (
25˚C
–30˚C
I B =–20mA I C =–10A 125
–5A
0 0 0
0 –1 –2 –3 –4 0 –0.5 –1.0 –1.5 –2.0 0 –1 –2

θ j - a (˚C/W)
(V C E =–4V) (V C E =–4V)
300 200 3
125˚C
25˚C
Typ
100
–30˚C 1
100
0.5
50
50
10 20 0.1
–0.02 –0.1 –0.5 –1 –5 –10 –15 –0.02 –0.1 –0.5 –1 –5 –10 –15 1 10 100 1000 2000

(V C E =–12V)
30 –40 130
3m
s
10
M aximum Power Dissipa ti on P C ( W)
m
10 s
–10 0m 100
Cut- off F re quen cy f T (MH Z )
s
W
Typ
ith
D
In
–5 C
fin
20
ite
he
at
si
nk
–1 50
10
–0.5
Without Heatsink
Natural Cooling
Without Heatsink
3.5
0 –0.1 0
0.02 0.1 1 10 –3 –10 –100 –200 0 25 50 75 100 125 150
20
2SA1493
36.4±0.3 6.0±0.2
VCBO –200 V ICBO VCB=–200V –100max µA 24.4±0.2 2.1
7
21.4±0.3
IC –15 A hFE VCE=–4V, IC=–5A 50min∗ a
IB –5 VCE(sat) IC=–10A, IB=–1A – 3.0max V b
A
4.0max
20.0min
0.65 +0.2
-0.1
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
1.05 +0.2
-0.1
5.45±0.1 5.45±0.1 3.0 +0.3

-0.1

(V C E =–4V)
–15 –3 –15
A mA
5A
–1 60
0
– mA
–1.
–400

A
–200m
–10 –2 –10
–1 00 mA
mp)
)
emp)
I B =–5 0m A
Temp
eTe
–5 –1 –5
(CaseT
Cas
(Case
I C =–15A
˚C (
25˚C
–30˚C
–10A 125
–5A
0 0 0
0 –1 –2 –3 –4 0 –1 –2 –3 –4 0 –1 –2
Collector-Emi tter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

θ j- a (˚C /W )
(V C E =–4V) (V C E =–4V)
300 200 2
125˚C
25˚C 1
Typ 100
–30˚C
100
0.5
50
50
10 20 0.1
–0.02 –0.1 –0.5 –1 –5 –10 –15 –0.02 –0.1 –0.5 –1 –5 –10 –15 1 10 100 1000 2000

(V C E =–12V)
30 –50 160
3m
20 s 10ms
m
s
Maximu m Power Dissip ation P C (W)
Typ
D 10
C
Cut- off F re quen cy f T ( MH Z )
–10 0m 120
W
Co lle ctor Cu rr ent I C ( A)
s
ith
20
In
–5
fin
ite
he
80
at
si
nk
–1
10
–0.5 Without Heatsink 40
Natural Cooling
Without Heatsink
5
0 –0.1 0
0.02 0.1 1 10 –2 –10 –100 –300 0 25 50 75 100 125 150
21
2SA1494
µA 36.4±0.3 6.0±0.2
24.4±0.2
2.1
7
IC hFE VCE=–4V, IC=–8A 50min∗
21.4±0.3
–17 A a
IB –5 A VCE(sat) IC=–10A, IB=–1A –2.5max V b
2
4.0max
20.0min
3
Tstg –55 to +150 °C ∗hFE Rank Y(50 to 100), P(70 to 140), G(90 to 180) 1.05 +0.2
-0.1
0.65 +0.2
-0.1
5.45±0.1 5.45±0.1 3.0 +0.3

-0.1
B C E

(V C E =–4V)
–17 –3 –17
–1A
A
mA
.5
0
–60
–1
–15 –15
0mA
–40

A –2
–200m
–10 –10
–1 00 m A
mp)
)
Temp
)
e Te
Temp
–1
(Case
(Cas
–5 –50mA –5
(Case
I C =–15A
125˚C
–30˚C
25˚C
I B =–20mA –10A
–5A
0 0 0
0 –1 –2 –3 –4 0 –1 –2 –3 0 –1 –2

θ j - a (˚C /W)
(V C E =–4V) (V C E =–4V)
300 200 2
125˚C
Typ 25˚C 1
100
100
–30˚C
0.5
50
50
10 20 0.1
–0.02 –0.1 –0.5 –1 –5 –10 –17 –0.02 –0.1 –0.5 –1 –5 –10 –17 1 10 100 1000 2000

(V C E =–12V)
30 –50 200
20 3m
m s
s 10ms
160
10
Typ
Cut- off Fr equ ency f T (MH Z )
0m
–10
W
D
ith
C
20
In
–5
fin
120
ite
he
at
si
nk
80
–1
10

Natural Cooling 40
Without Heatsink
5
0 –0.1 0
0.02 0.1 1 10 –2 –10 –100 –300 0 25 50 75 100 125 150
22
LOW VCE (sat) 2SA1567
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4064) Application : DC Motor Driver, Chopper Regulator and General Purpose
Symbol Ratings Unit Symbol Conditions Ratings Unit 4.2±0.2
10.1±0.2
4.0±0.2
2.8 c0.5
VCBO –50 V ICBO VCB=–50V –100max µA
8.4±0.2
16.9±0.3
ø3.3±0.2
a
IC –12 A hFE VCE=–1V, IC=–6A 50min
0.8±0.2
b
40typ MHz
±0.2
3.9
PC 35(Tc=25°C) W fT VCE=–12V, IE=0.5A
13.0min
Tj 150 °C COB VCB=–10V, f=1MHz 330typ pF 1.35±0.15
1.35±0.15
Tstg –55 to +150 °C
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
B C E

(V C E =–1V)
–12 –1.5 –12

A
mA
0m
–15
00
–10 0m A
–2
–10 –10
I B=

–8 –1.0 –8
–60mA
I C= –
12A
–9A
–6 –40mA –6
–6A
mp)
p)
mp)
–3A
Tem
–1A
e Te
e Te
se
–4 –20mA –0.5 –4
(Cas
(Cas
(Ca
˚C
–30˚C
25˚C
–10mA
125
–2 –2
–5mA
0 0 0
0 –1 –2 –3 –4 –5 –6 –2 –10 –100 –1000 –3000 0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

θ j- a (˚ C/W)
(V C E =–1V) (V C E =–1V)
500 500 4
125˚C
Typ
25˚C
–30˚C
100 100 1
50 50 0.5
30 30 0.3
–0.02 –0.1 –1 –10 –0.02 –0.1 –1 –10 1 10 100 1000

(V C E =–12V)
50 –30 35
1m Natural Cooling
s Silicone Grease
30
Maximu m Power Dissi pation P C (W)
–10 Heatsink: Aluminum

10
10
m
Typ 0m in mm
Cut- off Fr equ ency f T (M H Z )
40 s
–5 DC
W
ith
20
In
fin
30
ite
–1
he
150x150x2
at
–0.5
si
nk
Without Heatsink 100x100x2

Natural Cooling 10
20
50x50x2
–0.1
Without Heatsink
2
0 –0.05
0
0.05 0.1 1 12 –3 –5 –10 –50 –100 0 25 50 75 100 125 150
23
E
( 250 Ω )
Built-in Diode at C–E

Low VCE (sat) 2SA1568 B
Equivalent
curcuit C
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4065) Application : DC Motor Driver, Chopper Regulator and General Purpose
10.1±0.2 4.2±0.2
4.0±0.2
VCBO –60 V ICBO VCB=–60V –100max µA 2.8 c0.5
VCEO –60 V IEBO VEB=–6V –60max mA
8.4±0.2
16.9±0.3
ø3.3±0.2
IC –12
+ A hFE VCE=–1V, IC=–6A 50min a
0.8±0.2
b
PC 35(Tc=25°C) W VFEC IECO=–10A –2.5max V
±0.2
3.9
13.0min
Tj 150 °C fT VCE=–12V, IE=0.5A 40typ MHz 1.35±0.15
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 330typ pF 1.35±0.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
B C E

(V C E =–1V)
–12 –1.4 –12

0mA
–15
mA
00
–10 –1 00 mA –10
–2
I B=

–1.0
I C=
–8 –8
–60mA
–12
A
–9A
–6 –40mA –6
–6A
mp)
p)
mp)
Tem
–3 A
e Te
e Te
–0.5
se
–4 –4
–1A
(Cas
(Cas
(Ca
–20mA
˚C
–30˚C
25˚C
125
–2 –10mA –2
0 0 0
0 –1 –2 –3 –4 –5 –6 –7 –10 –100 –1000 –3000 0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2

θ j - a (˚C /W)
(V C E =–1V) (V C E =–1V)
300 300 4
Typ 125˚C
25˚C
100 100 –30˚C

10 10
0.5
2 2 0.3
–0.02 –0.1 –1 –10 –0.02 –0.1 –1 –10 1 10 100 1000

(V C E =–12V)
50 –30 35
1m Natural Cooling
s Silicone Grease
30
Maximu m Power Dissi pation P C (W)

10
Typ 10
m
0m in mm
40 s
–5 DC
W
ith
20
In
fin
30
ite
–1
he
150x150x2
at
–0.5
si
nk

Natural Cooling 10
20
50x50x2
–0.1
Without Heatsink
2
0 –0.05
0
0.05 0.1 1 10 –3 –5 –10 –50 –100 0 25 50 75 100 125 150
24
2SA1667/1668
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4381/4382) Application : TV Vertical Output, Audio Output Driver and General Purpose
Ratings Ratings
Symbol Unit Symbol Conditions Unit
2SA1667 2SA1668 2SA1667 2SA1668 10.1±0.2 4.2±0.2
4.0±0.2
2.8 c0.5
VCBO –150 –200 V –10max –10max µA
ICBO
VCEO –150 –200
8.4±0.2
V VCB= –150 –200 V
16.9±0.3
VEBO –6 V IEBO VEB=–6V –10max µA ø3.3±0.2
a
IC –2 A V(BR)CEO IC=–25mA –150min –200min V
0.8±0.2
b
IB –1 A hFE VCE=–10V, IC=–0.7A 60min
±0.2
3.9
PC 25(Tc=25°C) W VCE(sat) IC=–0.7A, IB=–0.07A –1.0max V
13.0min
1.35±0.15
0.85 +0.2
-0.1
0.45 +0.2 2.4±0.2
-0.1
2.54 2.54
2.2±0.2
B C E

(V C E =–10V)
–2.0 –3 –2
A
0m
–5
–1.6 –1.6

–2
–1.2 –1.2
mp)
Temp)
)
Temp
e Te
–0.8 I B =–5mA/Step –0.8
(Cas
(Case
(Case
–1
125˚C
–30˚C
25˚C
–0.4 –0.4
I C =–2A
–0 .5A –1A
0 0 0
0 –2 –4 –6 –8 –10 –2 –10 –100 –1000 0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2

θ j- a (˚C /W )
(V C E =–10V) (V C E =–10V)
400 400 5
125˚C
25˚C
Typ
–30˚C
100
100
1
40 30 0.5
–0.01 –0.1 –1 –2 –0.01 –0.1 –1 –2 1 10 100 1000

(V C E =–12V)
50 –5 25
Natural Cooling
1m
5m
Silicone Grease
20
Heatsink: Aluminum
s
ms
M aximu m Power Dissipat io n P C (W)
in mm
40 20
D
–1 C
Typ
W
ith
30
In
150x150x2
fin
ite
1 00x 1 0
he
0x
2
at
20 10
–0.1
si
nk
Without Heatsink
Natural Cooling 50x50x2
10 1.2SA1667
2.2SA1668
Without Heatsink
1 2 2
0 –0.01
0
0.01 0.1 1 2 –1 –10 –100 –300 0 25 50 75 100 125 150
25
2SA1673
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
0.8±0.2
15.6±0.2 5.5±0.2
VCBO –180 V ICBO VCB=–180V –10max µA 3.45 ±0.2
µA
5.5
9.5±0.2
VCEO –180 V IEBO VEB=–6V –10max
23.0±0.3
ø3.3±0.2
1.6
3.0
PC 85(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz
3.3
Tj 150 °C COB VCB=–10V, f=1MHz 500typ pF 1.75 0.8
16.2
2.15
-0.1
5.45±0.1 5.45±0.1 0.65 +0.2

-0.1 3.35
■Typical Switching Characteristics (Common Emitter) 1.5 4.4 1.5
B C E

(V C E =–4V)
–15 – 3 –15
A 6A
–1 –0. A
–0.4

A
– 0 .2
–10 –2 –10
–0 .1 A
mp)
)
p)
Temp
ase Tem
e Te
–5 –50mA –1 –5
Cas
(Case
˚C (
–30˚C (C
25˚C
125
I B =–20mA I C =–10A
–5A
0 0 0
0 –1 –2 –3 –4 0 –0.5 –1.0 –1.5 –2.0 0 –1 –2

θ j - a (˚ C/W)
(V C E =–4V) (V C E =–4V)
300 200 3
125˚C
25˚C
Typ 100
–30˚C 1
100
0.5
50
50
10 20 0.1
–0.02 –0.1 –0.5 –1 –5 –10 –15 –0.02 –0.1 –0.5 –1 –5 –10 –15 1 10 100 1000 2000

(V C E =–12V)
30 –40 100
3m
s
10
m
M aximu m Power Dissip ation P C (W)
10 s
0m 80
Typ –10
s
20 D
ith
–5 C
In
60
fin
ite
–2
he
at
si
nk
–1 40
10
–0.5
Without Heatsink
Natural Cooling 20
–0.2
Without Heatsink
3.5
0 –0.1 0
0.02 0.1 1 10 –3 –10 –100 –200 0 25 50 75 100 125 150
26
2SA1693
15.6±0.4 4.8±0.2
5.0±0.2
µA
2.0
1.8

19.9±0.3
4.0
IC –6 A hFE VCE=–4V, IC=–2A 50min∗ a ø3.2±0.1
b
4.0max
20.0min
-0.1 0.65 +0.2
-0.1

B C E
5.45±0.1 1.4
–30 10 –3 –10 5 –0.3 0.3 0.18typ 1.10typ 0.21typ b. Lot No.

(V C E =–4V)
–6 –3 –6
A mA
0
0 0m 15 –1 00 m A
–
–2
–8 0m A

–4 –2 –4
–50mA
–30mA
mp)
)
mp)
Temp
e Te
–20mA
e Te
–2 –1 –2
Cas
(Case
(Cas
˚C (
I B =–10mA I C =–6A
–30˚C
25˚C
125
–4A
–2A
0 0 0
0 –1 –2 –3 –4 0 –0.5 –1.0 –1.5 0 –1 –2

θ j- a ( ˚ C/W)
(V C E =–4V) (V C E =–4V)
300 300 5
125˚C
Typ
25˚C
100 100 –30˚C

1
50
50
0.5
30 30 0.3
–0.02 –0.1 –0.5 –1 –5 –6 –0.02 –0.1 –0.5 –1 –5 –6 1 10 100 1000 2000

(V C E =–12V)
30 –20 60
–10 10
m
Typ s
100ms
Cut -off Fre quen cy f T (M H Z )
–5
W
ith
20 DC 40
In
fin
ite
he
at
si
–1
nk
10 –0.5 20
Without Heatsink
Natural Cooling
Without Heatsink
3.5
0 –0.1 0
0.02 0.05 0.1 0.5 1 5 6 –5 –10 –50 –100 0 25 50 75 100 125 150
27
2SA1694
15.6±0.4 4.8±0.2
5.0±0.2
µA
2.0
–10max
1.8
VCBO –120 V ICBO VCB=–120V 9.6 2.0±0.1

19.9±0.3
4.0
b
4.0max
20.0min
-0.1 0.65 +0.2
-0.1
5.45±0.1 5.45±0.1 1.4

I C – V CE Characteristics (Typical) V CE ( s a t ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V CE =–4V)
–8 –3 –8
A A
A
0m 0m
m
0 5
–1
50
–2 mA
–3
–100

–6 –7 5m A –6
–2
–50mA
–4 –4
mp)
mp)
mp)
–25mA
e Te
e Te
e Te
–1
Cas
(Cas
(Cas
–2 –2
˚C (
I C =–8A
I B =–10mA
–30˚C
25˚C
125
–4A
–2A
0 0 0
0 –1 –2 –3 –4 0 –0.1 –0.2 –0.3 –0.4 –0.5 –0.6 –0.7 –0.8 –0.9 –1.0 0 –0.5 –1.0 –1.5

θ j - a ( ˚ C/W)
(V C E =–4V) (V C E =–4V)
200 300 3
Typ 125˚C
25˚C
100
100 1
–30˚C
50
50 0.5
30 30 0.3
–0.02 –0.1 –0.5 –1 –5 –8 –0.02 –0.1 –0.5 –1 –5 –8 1 10 100 1000

(V C E =–12V)
30 –20 80
10
m
–10 100ms s
Typ –5 DC 60
W
ith
Co lle ctor Cu rren t I C (A)
20
In
fin
ite
he
40
at
si
–1
nk
10
–0.5
20
Without Heatsink
Natural Cooling
Without Heatsink
3.5
0 –0.1
0.02 0.05 0.1 0.5 1 5 8 0
–5 –10 –50 –100 –200 0 25 50 75 100 12 5 150
28
2SA1695
15.6±0.4 4.8±0.2
µA
5.0±0.2
2.0
1.8
9.6 2.0±0.1

19.9±0.3
4.0
b
4.0max
20.0min
-0.1 0.65 +0.2
-0.1
■Typical Switching Characteristics (Common Emitter) 5.45±0.1 5.45±0.1 1.4

B C E

(V C E =–4V)
–10 –3 –10
A
A
mA 0 0m 0m
00 –3 –2
0
0m
A
–4 –15
–8 –8

mA
–100
–7 5m A –2
–6 –6
–50mA
p)
–4 –4
mp)
)
Tem
Temp
–1
e Te
se
–25mA
(Ca
(Case
(Cas
–2
˚C
–2
I C =–10A
25˚C
125
–30˚C
I B =–10mA
–5A
0 0 0
0 –1 –2 –3 –4 0 –0.5 –1.0 –1.5 –2.0 0 –1 –1.5

θ j- a ( ˚C/W)
(V C E =–4V) (V C E =–4V)
200 200 3
125˚C
Typ
25˚C
100 1
100
–30˚C
0.5
50 50
30 30 0.1
–0.02 –0.1 –0.5 –1 –5 –10 –0.02 –0.1 –0.5 –1 –5 –10 1 10 100 1000 2000

(V C E =–12V)
30 –30 100
Maximu m Power Diss ip ation P C (W)
–10
10
DC
ith
0m
Co lle ctor Cu rren t I C ( A)
–5
3m
20
s
In
Typ
fin
s
ite
he
50
10
at
si
ms
nk
–1
10
–0.5
Without Heatsink
Natural Cooling
Without Heatsink
3.5
0 –0.1 0
0.02 0.1 1 10 –3 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
29
2SA1725
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
10.1±0.2 4.2±0.2
4.0±0.2
VCBO –80 V ICBO VCB=–80V –10max µA 2.8 c0.5
8.4±0.2
VEBO V(BR)CEO IC=–25mA –80min V
16.9±0.3
–6 V
ø3.3±0.2
0.8±0.2
b
±0.2
3.9
13.0min
Tj 150 °C COB VCB=–10V, f=1MHz 150typ pF 1.35±0.15
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.35±0.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
B C E
I C – V CE Characteristics (Typical) V CE ( s a t ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V CE =–4V)
–6 –3 –6
m
A
0 mA
00 – 15 –1 00 m
A
–2
–5 –8 0m A

–4 –2 –4
–50mA
–3 –30mA
p)
mp)
Tem
)
emp
–20mA
e Te
–2 –1 –2
se
se T
(Ca
(Cas
(Ca
I B =–10mA I C =–6A
˚C
125
–30˚C
25˚C
–1 –4A
–2A
0 0 0
0 –1 –2 –3 –4 0 –0.5 –1.0 –1.5 0 –0.5 –1 –1.5

θ j- a ( ˚C/W)
(V C E =–4V) (V C E =–4V)
300 300 5
125˚C
Typ
25˚C
100 100 –30˚C
50 50
0.5
30 30 0.4
–0.02 –0.1 –0.5 –1 –5 –6 –0.02 –0.1 –0.5 –1 –5 –6 1 10 100 1000 2000

(V C E =–12V)
30 –20 30
–10
10
Typ m
100ms s
–5
Cut -off Fre quen cy f T ( MH Z )
DC
ith
Collecto r Cur ren t I C (A)
20 20
In
fin
ite
he
–1
at
si
nk
–0.5
10 10
Without Heatsink
Natural Cooling
2
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 6 –3 –5 –10 –50 –100 0 25 50 75 100 125 150
30
2SA1726
10.2±0.2 4.8±0.2
3.0±0.2

V(BR)CEO IC=–25mA
16.0±0.7
VEBO –6 V –80min V
50min∗
8.8±0.2
a ø3.75±0.2
b
PC 50(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 1.35
4.0max
12.0min
-0.1
2.5 2.5 1.4


(V CE =–4V)
–6 –3 –6
A A
Collector-Emitter Saturation Voltage V C E (s at) (V)
m
0m 50 A
0 –1 –1 00 m
–2
–8 0m A

–4 –2 –4
–50mA
–30mA
p)
mp)
Tem
)
emp
–20mA
e Te
–2 –1 –2
se
se T
(Ca
(Cas
(Ca
I B =–10mA I C =–6A
˚C
125
–30˚C
25˚C
–4A
–2A
0 0 0
0 –1 –2 –3 –4 0 –0.5 –1.0 –1.5 0 –0.5 –1 –1.5

θ j- a ( ˚ C/ W)
(V C E =–4V) (V C E =–4V)
300 300 5
125˚C
Typ
25˚C
100 100 –30˚C
50 50
0.5
30 30 0.4
–0.02 –0.1 –0.5 –1 –5 –6 –0.02 –0.1 –0.5 –1 –5 –6 1 10 100 1000 2000

(V C E =–12V)
30 –20 50
–10
100ms 10
Ma xim um Powe r Dissipation P C (W)
Typ m
–5 s 40
Cu t-of f Fr eque ncy f T (MH Z )
DC
ith
20
In
fin
30
ite
he
–1
at
si
nk
–0.5 20
10
Without Heatsink
Natural Cooling 10
–0.1
Without Heatsink
2
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 6 –3 –5 –10 –50 –100 0 25 50 75 100 1 25 150
31
LOW VCE (sat) 2SA1746
Silicon PNP Epitaxial Planar Transistor Application : Chopper Regulator, Switch and General Purpose
0.8±0.2
15.6±0.2 5.5±0.2
µA
5.5
9.5±0.2
23.0±0.3
ø3.3±0.2
IC –12(Pulse–20) A hFE VCE=–1V, IC=–5A 50min a
1.6
IB –4 A VCE(sat) IC=–5A, IB=–80mA –0.5max V b
3.0
PC 60(Tc=25°C) W VBE(sat) IC=–5A, IB=–80mA –1.2max V
3.3
Tj 150 °C fT VCE=–12V, IE=1A 25typ MHz 1.75 0.8
16.2
2.15
1.05 +0.2
-0.1
5.45±0.1 5.45±0.1 0.65 +0.2

-0.1 3.35
–20 4 –5 –10 5 –80 80 0.5typ 0.6typ 0.3typ B C E b. Lot No.

(V C E =–1V)
–12
–12 –12mA –1.5

–100 mA
–10 –10
–70mA

–8 –1.0 –8
–50mA
p)
)
em
emp
–6 –6
mp)
seT
–30m A
seT
(Ca
eTe
(Ca
–4 –0.5 –4
(Cas
˚C
25˚C
125
I C =–10A
–30˚C
I B =–10mA
–2 –5A –2
–3A
–1A
0 0 0
0 –1 –2 –3 –4 –5 –6 –3 –10 –100 –1000 0 –0.5 –1.0 –1.5

θ j - a (˚ C/W)
(V C E =–1V) (V C E =–1V)
500 500 4
125˚C
Typ
25˚C
1
–30˚C
100 100 0.5
50 50 0.2
–0.03 –0.1 –0.5 –1 –5 –10 –0.03 –0.1 –0.5 –1 –5 –10 1 10 100 1000

(V C E =–12V)
40 –30 60
10
0µ
1m

s
10
s
m
s
–10
30
Collector Curre nt I C (A)
Typ 40
W
–5
ith
In
fin
20
ite
he
at
si
20
nk
10 –1
Without Heatsink
Natural Cooling
Without Heatsink
3.5
0 –0.3 0
0.1 1 10 –3 –10 –50 –100 0 25 50 75 100 125 150
32
2SA1859/1859A
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4883/A) Application : Audio Output Driver and TV Velocity-modulation
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C)
External Dimensions FM20(TO220F)
Ratings Ratings
2SA1859 2SA1859A 2SA1859 2SA1859A 10.1±0.2 4.2±0.2
4.0±0.2
VCBO –150 –180 V –10max µA 2.8 c0.5
ICBO
VCEO –150 –180 V VCB= –150 –180 V
8.4±0.2
16.9±0.3
VEBO –6 V IEBO VEB=–6V –10max µA
ø3.3±0.2
IC –2 A a
V(BR)CEO IC=–10mA –150min –180min V
0.8±0.2
b
IB –1 A hFE VCE=–10V, IC=–0.7A 60 to 240
PC 20(Tc=25°C) W VCE(sat) –1.0max
±0.2
3.9
IC=–0.7A, IB=–70mA V
13.0min
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
–20 20 –1 –10 5 –100 100 0.5typ 1.0typ 0.5typ
B C E b. Lot No.

(V C E =–4V)
–2 –3 –2
A
A
0m
5mA
0m
m
–1
00
–3
–6
–1

–10 mA
–2
–1 –1
mp)
p)
p)
I B =–5mA
aseTem
eTe
eTem
–1
Cas
(Cas
˚C (
–30˚C (C
25˚C
125
I C =–2A
–0.5A –1A
0 0 0
0 –2 –4 –6 –8 –10 –2 –5 –10 –50 –100 –500 –1000 0 –0.5 –1

(V C E =–4V) (V C E =–4V)
θ j - a (˚ C/W)
300 300 7
125˚C
5
Typ 25˚C
100 100 –30˚C
50 50 1
–0.01 –0.1 –0.5 –1 –2 –0.01 –0.1 –0.5 –1 –2 1 10 100 1000 2000

(V C E =–12V)
100 –5 20
1m
10

ms
s
10
80
D
0m
–1 C
W
Typ
s
ith
In
–0.5
fin
60
ite
he
10
at
si
nk
40
–0.1
Without Heatsink
–0.5
Natural Cooling
20
1.2SA1859
2.2SA1859A
Without Heatsink
1 2 2
0 –0.01
0.01 0.05 0.1 0.5 1 2 0
–1 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
33
LAPT 2SA1860
0.8±0.2
15.6±0.2 5.5±0.2
µA
5.5
9.5±0.2
23.0±0.3
ø3.3±0.2
1.6
3.0
3.3
16.2
2.15
-0.1
5.45±0.1 5.45±0.1 0.65 +0.2

-0.1 3.35
1.5 4.4 1.5

(V C E =–4V)
–14 –3 –14
A
m mA
mA
mA mA
00 500 400 00
00
–6 – – –3
mA
–7
–200

–1 50 m A
–10 –10
–2
–100 mA
p)
p)
Tem
)
emp
Tem
–5 –50mA –5
–1
se
eT
ase
(Ca
I C =–10A
Cas
C (C
˚C
˚C (
I B =–20mA
125
25˚
–5A
–30
0 0 0
0 –1 –2 –3 –4 0 –0.2 –0.4 –0.6 –0.8 –1.0 0 –1 –2

θ j- a ( ˚C/W)
(V C E =–4V) (V C E =–4V)
200 200 3
125˚C
100 Typ 1
100 25˚C
–30˚C 0.5
50
50
20 30 0.1
–0.02 –0.1 –0.5 –1 –5 –10 –14 –0.02 –0.1 –0.5 –1 –5 –10 –14 1 10 100 1000 2000

(V C E =–12V)
80 –40 80
1m
10 s
10 m
–10 s
0m
Cu t-off Fre quen cy f T (M H Z )
60 D 60
W
C s
ith
Typ –5
In
fin
ite
he
40 40
at
si
–1
nk
–0.5
20 Without Heatsink 20
Natural Cooling
–0.1
Without Heatsink
3.5
0 –0.05
0.02 0.1 1 10 0
–2 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
34
2SA1907
0.8±0.2
15.6±0.2 5.5±0.2
µA
5.5
IEBO –10max
9.5±0.2
VCEO –80 V VEB=–6V
23.0±0.3
50min∗
ø3.3±0.2
1.6
3.0
3.3
16.2
2.15
1.05 +0.2
-0.1
5.45±0.1 5.45±0.1 0.65 +0.2

-0.1 3.35
–30 10 –3 –10 5 –0.3 0.3 0.18typ 1.10typ 0.21typ B C E b. Lot No.

(V CE =–4V)
–6 –3 –6
A A
m
0m 50 A
0 –1 –1 00 m
–2
–5 –8 0m A

–4 –2 –4
–50mA
–3 –30mA
p)
mp)
Tem
)
emp
–20mA
e Te
–2 –1 –2
se
se T
(Ca
(Cas
(Ca
I B =–10mA I C =–6A
˚C
125
–30˚C
25˚C
–1 –4A
–2A
0 0 0
0 –1 –2 –3 –4 0 –0.5 –1.0 –1.5 0 –1 –1.5

θ j- a ( ˚C/W)
(V C E =–4V) (V C E =–4V)
300 300 5
125˚C
Typ
25˚C
100 100 –30˚C

1
50 50
0.5
30 30 0.3
–0.02 –0.1 –0.5 –1 –5 –6 –0.02 –0.1 –0.5 –1 –5 –6 1 10 100 1000 2000

(V C E =–12V)
30 –20 60
–10 1m
Typ s
10
10 ms
W
–5 0m
ith
s
Collecto r Cur rent I C ( A)
DC
20 40
In
fin
ite
he
at
si
nk
–1
10 20
–0.5
Without Heatsink
Natural Cooling
Without Heatsink
3.5
0 –0.1 0
0.02 0.05 0.1 0.5 1 5 6 –5 –10 –50 –100 0 25 50 75 100 125 150
35
2SA1908
0.8±0.2
15.6±0.2 5.5±0.2
µA
5.5
IEBO VEB=–6V –10max
9.5±0.2
VCEO –120 V
23.0±0.3
50min∗
ø3.3±0.2
1.6
3.0
3.3
16.2
2.15
1.05 +0.2
-0.1
5.45±0.1 5.45±0.1 0.65 +0.2

-0.1 3.35
1.5 4.4 1.5

(V C E =–4V)
–8 –3 –8
A
A
A
m m
m
00 50
–1
50
–2 mA
–3
–100

–6 –7 5m A –6
–2
–50mA
–4 –4
mp)
mp)
mp)
–25mA
e Te
e Te
e Te
–1
Cas
(Cas
(Cas
–2 –2
˚C (
I C =–8A
I B =–10mA
–30˚C
25˚C
125
–4A
–2A
0 0 0
0 –1 –2 –3 –4 0 –0.2 –0.4 –0.6 –0.8 –1.0 0 –0.5 –1.0 –1.5

θ j - a (˚C/W)
(V C E =–4V) (V C E =–4V)
200 300 4
125˚C
Typ
25˚C
100 100
1
–30˚C
0.5
50 50
30 30 0.2
–0.02 –0.1 –0.5 –1 –5 –8 –0.02 –0.1 –0.5 –1 –5 –8 1 10 100 1000 2000

(V C E =–12V)
30 –20 80
–10 10
m
10 s
0m
Typ s
Cut-o ff Fr eque ncy f T ( MH Z )
–5 DC 60
W
ith
20
In
fin
ite
he
40
at
si
–1
nk
10
–0.5
Without Heatsink 20
Natural Cooling
Without Heatsink
3.5
0 –0.1 0
0.02 0.05 0.1 0.5 1 5 8 –5 –10 –50 –100 –150 0 25 50 75 100 125 150
36
2SA1909
0.8±0.2
15.6±0.2 5.5±0.2
µA
5.5
9.5±0.2
23.0±0.3
ø3.3±0.2
1.6
3.0
3.3
16.2
2.15
-0.1
5.45±0.1 5.45±0.1 0.65 +0.2

-0.1 3.35
1.5 4.4 1.5

(V C E =–4V)
–10 –3 –10
A A
m m m A
00 00 00 A
–4 –3 –2 0m
–15
–8 –8

mA
–100
–7 5m A –2
–6 –6
–50mA
p)
–4 –4
mp)
)
Tem
Temp
–1
e Te
se
–25mA
(Ca
(Case
(Cas
–2
˚C
–2
I C =–10A
25˚C
125
–30˚C
I B =–10mA
–5A
0 0 0
0 –1 –2 –3 –4 0 –0.5 –1.0 –1.5 –2.0 0 –1 –1.5

θ j - a (˚C /W)
(V C E =–4V) (V C E =–4V)
200 200 3
125˚C
Typ
100 1
100 25˚C
–30˚C
0.5
50
50
30 20 0.1
–0.02 –0.1 –0.5 –1 –5 –10 –0.02 –0.1 –0.5 –1 –5 –10 1 10 100 1000 2000

(V C E =–12V)
30 –30 80
M aximum Po wer Dissipation P C (W)
–10
10
60
W
10
ms
ith
–5
0m
20 D
In
C
s
Typ
fin
ite
he
40
at
si
nk
–1
10
–0.5
Without Heatsink 20
Natural Cooling
Without Heatsink
3.5
0 –0.1
0.02 0.1 1 10 0
–3 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
37
2SA2042
Silicon PNP Epitaxial Planar Transistor Application : Audio and General Purpose
10.1±0.2 4.2±0.2
4.0±0.2
VCBO −50 V ICBO VCB＝−50V −10max µA 2.8 c0.5
VCEO −50 V IEBO VEB＝−6V −10max µA
8.4±0.2
16.9±0.3
VEBO −6 V V(BR)CEO IC＝−25mA −50min V
ø3.3±0.2
IC −10（pulse−20） A hFE VCE＝−2V, IC＝−1A 130∼310 a
0.8±0.2
b
IB −3 A VCE(sat) IC＝−5A, IB＝−0.1A −0.5max V
PC 30(Tc＝25°C) W fT VCE＝−12V, IE＝0.5A 60typ MHz
±0.2
3.9
13.0min
Tj 150 °C COB VCB＝−10V, f＝1MHz 375typ pF 1.35±0.15
Tstg −55 to ＋150 °C 1.35±0.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
38
(2 k Ω)(6 5 0Ω) E
Darlington 2SB1257 B
Equivalent circuit C
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2014) Application : Driver for Solenoid, Relay and Motor and General Purpose
0.8±0.2
Symbol Ratings Unit Symbol Conditions Ratings Unit 15.6±0.2 5.5±0.2
3.45 ±0.2
5.5
9.5±0.2
23.0±0.3
ø3.3±0.2
1.6
b
IB –1 A VCE(sat) IC=–3A, IB=–6mA –1.5max V
3.0
3.3
PC 25(Tc=25°C) W VBE(sat) IC=–3A, IB=–6mA –2max V
1.75 0.8
16.2
2.15
-0.1
5.45±0.1 5.45±0.1 0.65 +0.2

-0.1 3.35

(V C E =–2V)
–6 –3 –4
mA
A
– 1 .8
3m
–1 .5 m A
2.
=–
–5
IB

–1.2 mA –3
–4 –2
–1.0mA
mp)
–0.8mA
)
–3 –2
Temp
)
Temp
e Te
–3A
(Cas
(Case
(Case
–2 –1 –2A
125˚C
25˚C
–1
–30˚C
I C =–1A
–1
0 –0.6 0
0 –1 –2 –3 –4 –5 –6 –0.2 –0.5 –1 –5 –10 –50 0 –1 –2 –2.2

θ j - a (˚ C/W)
(V C E =–2V) (V C E =–2V)
8000 8000 5
5000
Typ 5000
DC Cur r ent Gai n h F E
1000 1000 5˚C

12
˚C
500 500 25
0˚C
–3
100 100
1
50 50
20 20 0.7
–0.02 –0.1 –0.5 –1 –5 –6 –0.02 –0.05 –0.1 –0.5 –1 –5 –6 1 10 100 1000

(V C E =–12V)
240 –10 25
Natural Cooling
Silicone Grease
Maxim um Power Dissipation P C (W)
1m
200 in mm
20
10
s
m
DC
s
Typ
Co lle ctor Cu rre nt I C ( A)
160
W
ith
In
–1 150x150x2
fin
120
ite
1 00x 1 0
he
0x
2
at
–0.5 10
si
nk
80
50x50x2
Without Heatsink
40 Natural Cooling
Without Heatsink
–0.1 2
0 –0.07 0
0.05 0.1 0.5 1 4 –3 –5 –10 –70 0 25 50 75 100 125 150
39
(3 k Ω)(1 0 0Ω) E
Darlington
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD1785)
2SB1258 B
Application : Driver for Solenoid, Relay and Motor and General Purpose
10.1±0.2
4.0±0.2
2.8 c0.5
8.4±0.2
16.9±0.3
ø3.3±0.2
IC –6(Pulse–10) hFE VCE=–2V, IC=–3A 1000min a
A
0.8±0.2
b
PC 30(Tc=25°C) VBE(sat) IC=–3A, IB=–6mA –2max V
±0.2
3.9
W
13.0min
Tstg COB 100typ 1.35±0.15

–55 to +150 °C VCB=–10V, f=1MHz pF
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
B C E

(V C E =–4V)
–6 –3 –6
mA mA
–2.0
A
4
2.
4m
–
–1 .8 m A
3.
=–
–5 –5
IB

–1.2 mA
–4 –4
–0.9mA –2
–3 –3
mp)
)
Temp
Temp
e Te
(Cas
(Case
–2
(Case
–2
–6A
125˚C
25˚C
–4A
–30˚C
–1 –1 I C =–2A –1
0 –0.6 0
0 –1 –2 –3 –4 –5 –6 –0.5 –1 –10 –100 –200 0 –1 –2 –2.2

θ j- a ( ˚ C/ W)
(V C E =–4V) (V C E =–4V)
8000 8000 5
Typ
5000 5000
5˚C
12
˚C
1000 25
1000
500
0˚C
500 –3
1
100
80 30 0.5
–0.03 –0.1 –0.5 –1 –6 –0.03 –0.1 –0.5 –1 –6 1 10 100 1000

(V C E =–12V)
120 –20 30
Typ –10 Natural Cooling

10
Silicone Grease
100
50
0µ
Heatsink: Aluminum
1m
0µ
10
–5
s
in mm
Cu t-off Fr eque ncy f T ( MH Z )
s
m
DC
s
80 20
W
ith
In
fin
60 –1 150x150x2
ite
he
100x100x2
at
–0.5
si
40 10
nk

Natural Cooling
20
2
0 –0.05 0
0.05 0.1 0.5 1 5 6 –3 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
40
(3 k Ω)(1 0 0Ω) E
Darlington
2SB1259 B
Application : Driver for Solenoid, Relay and Motor and General Purpose
4.0±0.2
2.8 c0.5
8.4±0.2
16.9±0.3
VEBO –6 V V(BR)CEO IC=–10mA –120min V ø3.3±0.2
a
IC –10(Pulse–15) A hFE VCE=–4V, IC=–5A 2000min
0.8±0.2
b
±0.2
3.9
13.0min
1.35±0.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
B C E

(V C E =–4V)
–15 –3 –10
A m A
A
0m 10
0m
–
–2
–5
A
–5m
–8

A
–3m
–10 –2
–2mA
–6
mp)
Temp
)
Temp
I C =–10A
e Te
I B =–1mA
(Case
–4
(Cas
(Case
–5 –1 –5A
125˚C
25˚C
–1A
–30˚C
–2
0 0 0
0 –1 –2 –3 –4 –5 –6 –0.2 –1 –10 –100 –1000 0 –1 –2 –2.2

(V C E =–4V) (V C E =–4V)
θ j - a (˚C /W)
20000 20000 5
10000 10000
Typ
5000 5000
5˚C
12
˚C
1000 25
1000
500 0˚C
500 –3 1
100
100 0.5
50
50 20 0.3
–0.03 –0.1 –0.5 –1 –5 –10 –0.02 –0.1 –0.5 –1 –5 –10 1 10 100 1000

(V C E =–12V)
200 –20 30
Natural Cooling
10
–10
Typ
0µ
Silicone Grease
1m
Heatsink: Aluminum
10
–5
s
in mm
DC
s
20
W
ith
In
–1
fin
100 150x150x2
ite
–0.5
he
100x100x2
at
si
10
nk
Without Heatsink
–0.1
Without Heatsink
–0.05 2
0 –0.03 0
0.05 0.1 0.5 1 5 10 –3 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
41
(2 k Ω)(1 0 0Ω) E
Silicon PNP Epitaxial Planar Transistor Application : Driver for Printer Head, Solenoid, Relay, Motor and General Purpose
Symbol Ratings Unit Symbol Condition Ratings Unit 4.2±0.2
10.1±0.2
4.0±0.2
2.8 c0.5
8.4±0.2
16.9±0.3
ø3.3±0.2
IC –12(Pulse–20) hFE VCE=–4V, IC=–10A 2000min a
A
0.8±0.2
b
±0.2
3.9
13.0min
Tj 150 °C fT VCE=–12V, IE=1A 130typ MHz 1.35±0.15
Tstg COB VCB=–10V, f=1MHz 170typ 1.35±0.15

–55 to +150 °C pF
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
B C E

(V C E =–4V)
–20 –3 –20
A
–6m
A
0m
–4 m A
–1
–3 mA

–15 –15
–2m A –2
–10 –10
)
emp
)
emp
I B =–1mA I C =–10A
mp)
eT
se T
e Te
Cas
–1 –5A
(Ca
–1A
˚C (
(Cas
–5 –5
25˚C
125
–30˚C
0 0 0
0 –1 –2 –3 –4 –5 –6 –0.1 –1 –10 –100 0 –1 –2 –2.4

θ j- a ( ˚C/W)
(V C E =–4V) (V C E =–4V)
20000 20000 5
C
10000 5˚
10000 Typ 12
˚C
5000 25
5000 ˚C
–30
1
1000 0.5
1000
800 500 0.3
–0.3 –1 –5 –10 –20 –0.3 –0.5 –1 –5 –10 –20 1 10 100 1000

(V C E =–12V)
240 –30 30
Natural Cooling
Silicone Grease
Ma ximum Po we r Dissipatio n P C (W)
1m
200 –10
Heatsink: Aluminum
10
s
m
DC in mm
s
–5
160 20
W
Typ
ith
In
fin
120 150x150x2
ite
–1
he
100x100x2
at
–0.5
si
80 10
nk
Without Heatsink
40
2
0 –0.05 0
0.05 0.1 0.5 1 5 10 20 –2 –5 –10 –50 –100 0 25 50 75 100 125 150
42
(2 k Ω)(1 0 0Ω) E
Silicon PNP Epitaxial Planar Transistor Application : Driver for Printer Head, Solenoid, Relay, Motor and General Purpose
0.8±0.2
15.6±0.2 5.5±0.2
5.5
9.5±0.2
23.0±0.3
ø3.3±0.2
1.6
b
3.0
PC 60(Tc=25°C) VBE(sat) IC=–10A, IB=–20mA –2.0max V
3.3
W
Tj fT 130typ 1.75 0.8
150 °C VCE=–12V, IE=1A MHz
16.2
2.15
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 170typ pF +0.2
1.05 -0.1
5.45±0.1 5.45±0.1 0.65 +0.2

-0.1 3.35
1.5 4.4 1.5

(V C E =–4V)
–20 –3 –20
A
–6m
A
m
–4 m A
10
=–
IB
–3 mA

–15 –15
–2m A –2
–10 –10
)
emp
)
emp
–1mA I C =–10A
mp)
eT
se T
e Te
Cas
–1 –5A
(Ca
–1A
˚C (
(Cas
–5 –5
25˚C
125
–30˚C
0 0 0
0 –1 –2 –3 –4 –5 –6 –0.1 –1 –10 –100 0 –1 –2 –2.4

θ j- a ( ˚C/W)
(V C E =–4V) (V C E =–4V)
20000 20000 5
C
10000 5˚
12
10000 Typ
˚C
5000 25
5000 ˚C
–30
1
1000 0.5
1000
800 500 0.3
–0.3 –1 –5 –10 –20 –0.3 –0.5 –1 –5 –10 –20 1 10 100 1000

(V C E =–12V)
240 –30 60
DC
1m
200 –10
10
s
m
–5
160 40
W
Typ
ith
In
fin
120
ite
–1
he
at
–0.5
si
80 20
nk
Without Heatsink
Natural Cooling
40
3.5
0 –0.05 0
0.05 0.1 0.5 1 5 10 20 –2 –5 –10 –50 –100 0 50 100 150
43
(2 k Ω) (80Ω) E
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2082) Application : Chopper Regulator, DC Motor Driver and General Purpose
0.8±0.2
15.6±0.2 5.5±0.2
5.5
9.5±0.2
VEBO –6 V(BR)CEO IC=–10mA –120min V
23.0±0.3
V
ø3.3±0.2
1.6
IB –1 VCE(sat) IC=–8A, IB=–16mA –1.5max V b
A
3.0
3.3
16.2
2.15
1.05 +0.2
-0.1
5.45±0.1 5.45±0.1 0.65 +0.2

-0.1 3.35
1.5 4.4 1.5

(V C E =–4V)
–26 –3 –16
A
m A
A
20 –12m
0m
–
–4

–20 –6 mA –12
–2
p)
I C =–16A
–3m A
Tem
)
emp
mp)
–8
se
se T
e Te
(Ca
–8A
(Ca
–10
(Cas
I B =–1.5m A
˚C
–1 –4A
125
25˚C
–30˚C
–4
0 0 0
0 –1 –2 –3 –4 –5 –6 –0.5 –1 –10 –100 0 –1 –2 –2.4

θ j - a ( ˚ C/ W)
(V C E =–4V) (V C E =–4V)
20000 20000 3
10000 10000
Typ 5˚C
12
5000 5000 1
˚C
25
˚C
– 30
0.5
1000 1000
500 500 0.2

–0.3 –0.5 –1 –5 –10 –16 –0.3 –0.5 –1 –5 –10 –16 1 10 100 1000

(V C E =–12V)
100 –50 80
10
1m 0µ
10 s s
Typ m
–10 s
DC 60
W
ith
–5
In
fin
ite
he
50
at
40
–1
si
nk
–0.5
Without Heatsink
Natural Cooling 20
–0.1

3.5
0 –0.03 0
0.05 0.1 0.5 1 5 10 16 –3 –5 –10 –50 –100 –200 0 50 100 150
44
(2 k Ω) (80Ω) E
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2083) Application : Chopper Regulator, DC Motor Driver and General Purpose
15.6±0.4 4.8±0.2
5.0±0.2
µA
2.0
1.8

VEBO –6 –120min
19.9±0.3
V V(BR)CEO IC=–25mA V
4.0
a ø3.2±0.1
b
PC 120(Tc=25°C) W VBE(sat) IC=–12A, IB=–24mA –2.5max V 2
4.0max
20.0min
Tj 150 °C fT VCE=–12V, IE=1A 50typ MHz 3

-0.1 0.65 +0.2
-0.1
5.45±0.1 5.45±0.1 1.4


(V C E =–4V)
–25 –3 –25
.0 mA
–8 –6 .0 m A
–20 –20

–4 .0m A
I C =–25A
–2
–15 –15
–2.5m A
)
mp
p)
em
Te
)
emp
eT
se
–12A
–10 –10
(Ca
–1.5mA
eT
Cas
–1
Cas
5˚C
–6A
C(
12
25˚
˚C (
–1.0mA
–30
–5 –5
I B =–0.6mA
0 0 0
0 –1 –2 –3 –4 –5 –6 –0.5 –1 –10 –100 –500 0 –1 –2 –2.6

θ j- a ( ˚ C/W)
(V C E =–4V) (V C E =–4V)
20000 20000 2
10000 10000
5˚C
Typ 12 1
5000 5000
˚C
25
0.5
˚C
–30
1000 1000
500 500
200 200 0.1

–0.2 –0.5 –1 –5 –10 –40 –0.2 –0.5 –1 –5 –10 –40 1 10 100 1000

(V C E =–12V)
60 –100 120
Typ –50
50 100
1m
W
10
ith
Co lle ctor Cu rre nt I C (A)
s
m
40 DC
In
s
–10
fin
ite
he
30 –5
at
si
nk
50
20
–1
10 Without Heatsink
–0.5
Natural Cooling
Without Heatsink
3.5
0 –0.2 0
0.1 0.5 1 5 10 –3 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
45
(2 k Ω) (80Ω) E
Silicon PNP Epitaxial Planar Transistor Application : Chopper Regulator, DC Motor Driver and General Purpose
15.6±0.4 4.8±0.2
5.0±0.2
µA
2.0
1.8

19.9±0.3
4.0
a ø3.2±0.1
b
4.0max
20.0min

-0.1 0.65 +0.2
-0.1
5.45±0.1 5.45±0.1 1.4


(V CE =–4V)
–26 –3 –16
A
m A
A
0
–2 –12m
0m
–4

–20 –6 mA –12
–2
p)
I C =–16A
–3m A
Tem
)
emp
mp)
–8
se
se T
e Te
(Ca
–8A
(Ca
–10
(Cas
I B =–1.5m A
˚C
–1 –4A
125
25˚C
–30˚C
–4
0 0 0
0 –1 –2 –3 –4 –5 –6 –0.5 –1 –10 –100 0 –1 –2 –2.4

θ j - a (˚C /W )
(V C E =–4V) (V C E =–4V)
20000 20000 3
10000 10000
Typ 5˚C
12
5000 5000 1
˚C
25
0 ˚C
–3
0.5
1000 1000
500 500 0.2

–0.3 –1 –5 –10 –16 –0.3 –0.5 –1 –5 –10 –16 1 10 100 1000

(V C E =–12V)
100 –50 80
10
1m 0µ
10 s s
M aximum Po we r Dissipatio n P C (W)
Typ m
s
–10
DC 60
W
ith
–5
In
fin
ite
he
50 40
at
–1
si
nk
–0.5
Without Heatsink
Natural Cooling
20
–0.1

3.5
0 –0.03 0
0.05 0.1 0.5 1 5 10 16 –3 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A ) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
46
(7 0 Ω ) E
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2389) Application : Audio, Series Regulator and General Purpose
4.8±0.2
µA
15.6±0.4
5.0±0.2
VCBO –160 ICBO VCB=–160V –100max
2.0
V
1.8
9.6 2.0±0.1

19.9±0.3
4.0
b
4.0max
20.0min
-0.1 0.65 +0.2
-0.1
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)

5.45±0.1 5.45±0.1 1.4

A
m
(V C E =–4V)
.5
mA
–8 –3 –8
–2
mA A
–2.0 – 1 .8 m
–10
A
– 1 .5 m
–1. 3m A

–6 –1 .0 mA –6
–0.8m A –2 –8A
–4 –0.5m A –6A
–4
p)
mp)
I C =–4A
Tem
)
emp
e Te
I B =–0.3mA –1
se
se T
(Ca
Cas
(Ca
–2 –2
˚C
˚C (
25˚C
125
–30
0 0 0
0 –2 –4 –6 –0.2 –0.5 –1 –5 –10 –50 –100 –200 0 –1 –2 –3

θ j - a (˚ C/W)
(V C E =–4V) (V C E =–4V)
40,000 50000 4
125˚C
Typ
25˚C
10000
10,000 –30˚C 1
5000
5,000 0.5
2,000 1000 0.2

–0.2 –0.5 –1 –5 –8 –0.2 –0.5 –1 –5 –8 1 5 10 50 100 500 1000 2000

(V C E =–12V)
100 –20 80
–10 10
10
M aximum Po wer Dissipation P C (W)
m
80 0m s
–5 D s
60
W
Typ C
ith
In
fin
60
ite
he
–1 40
at
si
nk
40
–0.5
Without Heatsink 20
20 Natural Cooling
–0.1
Without Heatsink
3.5
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 8 –2 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
47
(7 0 Ω ) E
Darlington
2SB1560 B
Application : Audio, Series Regulator and General Purpose

4.8±0.2
µA 15.6±0.4
5.0±0.2
2.0
1.8
9.6 2.0±0.1

19.9±0.3
4.0
b
2
4.0max
20.0min
Tj 150 °C fr VCE=–12V, IE=2A 50typ MHz
3
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 230typ pF 1.05 +0.2 0.65 +0.2
-0.1 -0.1

5.45±0.1 5.45±0.1 1.4

A (V C E =–4V)
Collector-Emitter Saturation Voltage V C E (s at ) (V )
–10 . 5m –3 –10
–2 mA
mA
– 2 .0
–10
–1 .5m A
–8 –1. 2mA –8

–1.0 mA
–2
–6 –0.8m A –6
–10A
–0.6m A
–7A
mp)
)
Temp
)
–4 –4
Temp
I B =–0.4mA I C =–5A
e Te
–1
(Case
(Cas
(Case
125˚C
–2 –2
–30˚C
25˚C
0 0 0
0 –2 –4 –6 –0.2 –0.5 –1 –5 –10 –50 –100 –200 0 –1 –2 –2.5

θ j - a ( ˚ C/W)
(V C E =–4V) (V C E =–4V)
40,000 50000 3
125˚C
Typ
10000 25˚C 1
10,000
5000 –30˚C 0.5

5,000
1000
1,000 500 0.1

–0.2 –0.5 –1 –5 –10 –0.2 –0.5 –1 –5 –10 1 5 10 50 100 500 1000 2000

(V C E =–12V)
100 –30 100
10
10 m
80 –10 0m s
s
W
–5 DC
ith
In
fin
60 Typ
ite
he
50
at
–1
si
nk
40
–0.5
Without Heatsink
20 Natural Cooling
–0.1
Without Heatsink
3.5
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 10 –3 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
48
(7 0 Ω ) E
Darlington
2SB1570 B

36.4±0.3 6.0±0.2
24.4±0.2 2.1
7
5000min∗
21.4±0.3

2
4.0max
20.0min
230typ 0.65 +0.2
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz pF 1.05 +0.2
-0.1
-0.1
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.45±0.1 5.45±0.1 3.0 +0.3
-0.1

(V C E =–4V)
–12 –3 –12
A
0 m –2 .0 m A
–1
–2 .0m A
–10 –10

–1.5 mA
–8 –1.2m A –2 –8
–1.0 mA
–0.8m A –10A
–6 –6
mp)
–0.6mA –7A
)
mp)
Temp
e Te
I C =–5A
e Te
–4 –1 –4
I B =–0.4mA
(Cas
(Case
(Cas
125˚C
–30˚C
25˚C
–2 –2
0 0 0
0 –2 –4 –6 –0.2 –0.5 –1 –5 –10 –50 –100 –200 0 –1 –2 –2.5

θ j- a ( ˚C/W)
(V C E =–4V) (V C E =–4V)
40,000 50000 2
125˚C
Typ 1
25˚C
10,000 10000
–30˚C 0.5
5,000 5000
0.1
1000
1,000 800
–0.2 –0.5 –1 –5 –10–12 –0.2 –0.5 –1 –5 –10 –12 1 5 10 50 100 500 1000 2000

(V C E =–12V)
100 –30 160
10
–10 m
80 10 s
0m 120
W
–5 s
ith
DC
In
fin
60 Typ
ite
he
80
at
–1
si
nk
40
–0.5
Without Heatsink 40
20 Natural Cooling
–0.1
Without Heatsink
5
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 10 –3 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
49
(7 0 Ω ) E
0.8±0.2
15.6±0.2 5.5±0.2
5.5
9.5±0.2
23.0±0.3
a
1.6
b
3.0
3.3
16.2
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 160typ pF 2.15
1.05 +0.2
-0.1
5.45±0.1 5.45±0.1 0.65 +0.2

-0.1 3.35
B C E

A
m
(V C E =–4V)
.5
mA
–8 –3 –8
–2
mA A
–2.0 – 1 .8 m
–10
A
– 1 .5 m
–1. 3m A

–6 –1 .0 mA –6
–0.8m A –2 –8A
–0.5m A –6A
–4 –4
p)
mp)
I C =–4A
Tem
)
emp
e Te
I B =–0.3mA –1
se
se T
(Ca
Cas
–2 –2
(Ca
˚C
˚C (
125
25˚C
–30
0 0 0
0 –2 –4 –6 –0.2 –0.5 –1 –5 –10 –50 –100 –200 0 –1 –2 –3

θ j- a ( ˚C/W)
(V C E =–4V) (V C E =–4V)
40,000 50000 4
125˚C
Typ
25˚C
10000
10,000 –30˚C 1
5000
5,000 0.5
2,000 1000 0.2

–0.2 –0.5 –1 –5 –8 –0.2 –0.5 –1 –5 –8 1 5 10 50 100 500 1000 2000

(V C E =–12V)
100 –20 80
–10 10
10
m
80 0m s
Cut- off F req uenc y f T (MH Z )
–5 D s 60
C
W
Typ
ith
In
fin
60
ite
he
–1 40
at
si
nk
40 –0.5
Without Heatsink 20
20 Natural Cooling
–0.1
Without Heatsink
3.5
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 8 –2 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
50
(7 0 Ω ) E
0.8±0.2
15.6±0.2 5.5±0.2
5.5
9.5±0.2
23.0±0.3
a
1.6
b
3.0
3.3
16.2
1.05 +0.2
-0.1
5.45±0.1 5.45±0.1 0.65 +0.2
-0.1 3.35
B C E

A (V C E =–4V)
m
–10 .5 –3 –10
–2 mA
mA
– 2 .0
–10
–1 .5m A
–8 –1. 2mA –8

–1.0 mA
–2
–6 –0.8m A –6
–10A
–0.6m A
–7A
mp)
)
)
Temp
–4 –4
Temp
I C =–5A
e Te
I B =–0.4mA
–1
(Case
(Cas
(Case
125˚C
–2 –2
–30˚C
25˚C
0 0 0
0 –2 –4 –6 –0.2 –0.5 –1 –5 –10 –50 –100 –200 0 –1 –2 –2.5

θ j - a ( ˚C/W)
(V C E =–4V) (V C E =–4V)
40,000 50,000 3
125˚C
Typ
1
10,000 10,000 25˚C
5,000 –30˚C 0.5

5,000
1,000
1,000 500 0.1

–0.2 –0.5 –1 –5 –10 –0.2 –0.5 –1 –5 –10 1 5 10 50 100 500 1000 2000

(V C E =–12V)
100 –30 80
10
–10 10 m
80 0m s
Cut -off Fre quen cy f T (M H Z )
s
W
60
ith
–5
DC
In
fin
60 Typ
ite
he
40
at
–1
si
nk
40
–0.5
Without Heatsink 20
20 Natural Cooling
–0.1
Without Heatsink
3.5
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 10 –3 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
51
(7 0 Ω ) E
VCBO ICBO –100max µA 15.6±0.4 4.8±0.2
5.0±0.2
–150 V VCB=–150V
2.0
1.8
9.6 2.0±0.1
19.9±0.3
4.0
IB VCE(sat) –2.5max b
–1 A IC=–10A, IB=–10mA V
2
4.0max
20.0min
Tj 150 °C fT VCE=–12V, IE=2A 45typ MHz
3
1.05 +0.2
-0.1 0.65 +0.2
-0.1

5.45±0.1 5.45±0.1 1.4
–40 4 10 –10 5 –10 10 0.7typ 1.6typ 1.1typ b. Lot No.

–50mA
–10mA
–3mA (V C E =–4V)
–15 –1.5mA –3 –15

A
m
–2
–1 .0m A

–0.8 mA
–10 –2 –10
I C =–15A
–0. 5m A
p)
Tem
)
I C =–1 0A
emp
mp)
se
se T
I B =–0.3mA
(Ca
e Te
I C =–5A
(Ca
–5 –1 –5
˚C
Cas
125
25˚C
˚C (
–30
0 0 0
0 –2 –4 –6 –0.2 –0.5 –1 –5 –10 –50 –100 –200 0 –1 –2 –3

θ j- a ( ˚ C/ W)
(V C E =–4V) (V C E =–4V)
50,000 50000 3
125˚C
Typ 25˚C
1
–30˚C
10,000 10000
0.5
5,000 5000
1,000 1000 0.1

–0.2 –0.5 –1 –5 –10 –15 –0.2 –0.5 –1 –5 –10 –15 1 10 100 1000 2000

(V C E =–12V)
60 –50 130
10
10 m
0m s
Cut -off Fre quen cy f T (MH Z )
–10 DC s 100
W
ith
Collect or Cur ren t I C ( A)
40 –5
In
fin
ite
he
at
si
nk
–1
50
20 –0.5
Without Heatsink
Natural Cooling

3.5
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 10 –3 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
52
( 7 0Ω ) E
VCBO –150 V ICBO VCB=–150V –100max µA 36.4±0.3 6.0±0.2
VCEO –150 V IEBO VEB=–5V –100max µA 2-ø3.2±0.1

24.4±0.2 2.1
9
5000min∗
7
21.4±0.3
a
2
Tj 150 fT VCE=–12V, IE=2A 45typ MHz
4.0max
20.0min
°C
3
-0.1
1.05 +0.2
-0.1

5.45±0.1 5.45±0.1 3.0 +0.3
-0.1


A
0m
(V C E =–4V)
–1
–17 –3mA –2mA –3 17

mA
–1 .5 m A
–50
–15 15

–1.0 mA
)
mp
–0.8 mA –2
Te
I C =–15A
–10 10
se
(Ca
–0.5mA
I C =–1 0A
5˚C
p)
)
emp
Tem
12
eT
I B =–0.3mA I C =–5A
ase
–1
Cas
–5 5
C (C
˚C (
25˚
–30
0 0 0
0 –2 –4 –6 –0.2 –0.5 –1 –5 –10 –50 –100 –200 0 –1 –2 –3

θ j - a ( ˚C/W)
(V C E =–4V) (V C E =–4V)
50,000 50000 2
125˚C
Typ 25˚C 1
–30˚C
10,000 10000
0.5
5,000 5000
1,000 1000 0.1

–0.2 –0.5 –1 –5 –10 –17 –0.2 –0.5 –1 –5 –10 –17 1 10 100 1000 2000

(V C E =–12V)
60 –50 200
10
10 m
0m s
s 160
–10
DC
W
ith
40 –5
In
fin
120
ite
he
at
si
nk
–1
80
20 –0.5
Without Heatsink
Natural Cooling
40
–0.1
Without Heatsink
5
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 10 –3 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
53
(7 0 Ω ) E
0.8±0.2
15.6±0.2 5.5±0.2
5.5
9.5±0.2
23.0±0.3
a
IB VCE(sat) IC=–10A, IB=–10mA –2.5max V
1.6
–1 A b
3.0
3.3
16.2
+0.2
1.05 -0.1
5.45±0.1 5.45±0.1 0.65 +0.2
-0.1 3.35
B C E b. Lot No.
–40 4 –10 –10 5 –10 10 0.7typ 1.6typ 1.1typ

–50mA
–10mA
–3mA (V CE =–4V)
–15 –1.5mA –3 –15

A
m
–2
–1 .0m A

–0.8 mA
–10 –2 –10
I C =–15A
–0. 5m A
p)
Tem
)
I C =–1 0A
emp
mp)
se
seT
I B =–0.3mA
(Ca
eT e
I C =–5A
(Ca
–5 –1 –5
˚C
Cas
125
25˚C
˚C (
–30
0 0 0
0 –2 –4 –6 –0.2 –0.5 –1 –5 –10 –50 –100 –200 0 –1 –2 –3

θ j - a (˚C /W)
(V C E =–4V) (V C E =–4V)
50,000 50000 3
125˚C
Typ 25˚C
1
–30˚C
10,000 10000
0.5
5,000 5000
1,000 1000 0.1

–0.2 –0.5 –1 –5 –10 –15 –0.2 –0.5 –1 –5 –10 –15 1 10 100 1000 2000

(V C E =–12V)
60 –50 100
10
10 m
0m s
s 80
–10 DC
Collect or Cur re nt I C ( A)
40 –5
ith
In
60
fin
ite
he
at
–1
si
nk
40
20 –0.5
Without Heatsink
Natural Cooling
20
–0.1
Without Heatsink
3.5
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 10 –3 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
54
( 7 0Ω ) E
10.2±0.2 4.8±0.2
3.0±0.2

16.0±0.7
IC –6 A hFE VCE=–4V, IC=–5A 5000min∗
8.8±0.2
a ø3.75±0.2
IB –1 VCE(sat) IC=–5A, IB=–5mA –2.5max V b

A
PC 50(Tc=25°C) W VBE(sat) IC=–5A, IB=–5mA –3.0max V 1.35
4.0max
12.0min
-0.1

2.5 2.5 1.4

A
A
m
m
.5 (V CE =–4V)
–1
–6 –0 –3 –6
A
A
.4m
–0 .3 m A
–5m
–0
–0. 2m A

–4 –2 –4
–5A
p)
I B =–0. 1mA I C =–3A
Tem
)
emp
mp)
se
eT e
–2 –1 –2
seT
(Ca
Cas
(Ca
˚C
125
˚C (
25˚C
–30
0 0 0
0 –2 –4 –6 –0.1 –0.5 –1 –5 –10 –50 –100 0 –1 –2 –3

θ j- a ( ˚C/W)
(V C E =–4V) (V C E =–4V)
40000 5
50000
125˚C
Typ
25˚C
10000 10000
–30˚C
5000 5000
1000 1
1000
500
500
0.5
200 100 0.4
–0.02 –0.05 –0.1 –0.5 –1 –5 –6 –0.02 –0.05 –0.1 –0.5 –1 –5 –6 1 10 100 1000 2000

(V C E =–12V)
120 50
100 Typ
40
Cu t-off Fr eque ncy f T (MH Z )
W
ith
80
In
fin
30
ite
he
60
at
si
nk
20
40
10
20
Without Heatsink
2
0 0
0.02 0.05 0.1 0.5 1 5 6 0 25 50 75 100 125 150
Emitter Current I E (A) Ambient Temperature Ta(˚C)
55
(7 0 Ω ) E
4.8±0.2
µA 15.6±0.4
5.0±0.2
2.0
1.8
9.6 2.0±0.1
19.9±0.3
4.0
b
2
4.0max
20.0min
3
-0.1 0.65 +0.2
-0.1

5.45±0.1 5.45±0.1 1.4

A
m 5mA (V C E =–4V)
–1 –0.
–6 –3 –6
A
A
.4m
–0 .3 m A
–5m
–0

–0. 2m A
–4 –2 –4
–5A
p)
Tem
)
emp
mp)
I B =–0. 1mA
se
I C =–3A
se T
e Te
(Ca
(Ca
(Cas
–2 –1 –2
˚C
125
25˚C
–30˚C
0 0 0
0 –2 –4 –6 –0.1 –0.5 –1 –5 –10 –50 –100 0 –1 –2 –3

θ j- a ( ˚C/W)
(V C E =–4V) (V C E =–4V)
50000 50000 5
125˚C
Typ 25˚C
10000 10000
–30˚C
5000 5000
1000 1000 1
500 500
0.5
100 100
–0.01 –0.05 –0.1 –0.5 –1 –5 –6 –0.01 –0.05 –0.1 –0.5 –1 –5 –6 1 5 10 50 100 500 1000 2000

(V C E =–12V)
120 –20 60
Typ –10
100
–5 10
m
Cut-o ff Fr equ ency f T (M H Z )
10 s
ith
0m
80 s 40
In
DC
fin
ite
he
–1
60
at
si
–0.5
nk
40 20

20 Natural Cooling
Without Heatsink
3.5
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 6 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
56
(7 0 Ω ) E
4.2±0.2
µA
10.1±0.2
4.0±0.2
VCBO –110 V ICBO VCB=–110V –100max 2.8 c0.5
8.4±0.2
16.9±0.3
ø3.3±0.2
0.8±0.2
IB –1 VCE(sat) IC=–5A, IB=–5mA –2.5max b
A V
±0.2
3.9
13.0min
1.35±0.15
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
B C E

A
A
m
5m (V C E =–4V)
–1
.
–6 –0 –3 –6
mA
A
.4
–0 .3 m A
–5m
–0

–0. 2m A
–4 –2 –4
–5A
p)
Tem
)
emp
mp)
I B =–0. 1mA
se
I C =–3A
se T
e Te
(Ca
(Ca
(Cas
–2 –1 –2
˚C
125
25˚C
–30˚C
0 0 0
0 –2 –4 –6 –0.1 –0.5 –1 –5 –10 –50 –100 0 –1 –2 –3

θ j- a ( ˚ C/W)
(V C E =–4V) (V C E =–4V)
50000 50000 5.0
125˚C
Typ 25˚C
10000 10000
–30˚C
5000 5000
1.0
1000 1000
500 500
0.5
100 100 0.3

–0.01 –0.05 –0.1 –0.5 –1 –5 –6 –0.01 –0.05 –0.1 –0.5 –1 –5 –6 1 10 100 1000

(V C E =–12V)
120 –20 30
–10
100 Typ 10
m
–5 10 s
Cut-o ff Fr equ ency f T (MH Z )
0m
ith
s
80 D 20
In
C
fin
ite
he
60
at
–1
si
nk
–0.5
40 10
Without Heatsink
Natural Cooling
20
2
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 6 –3 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
57
(7 0 Ω ) E
Darlington
2SB1687 B

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3P)
0.8±0.2
15.6±0.2 5.5±0.2
5.5
9.5±0.2
23.0±0.3
a
IB –1 VCE(sat) IC=–5A, IB=–5mA –2.5max V
1.6
A b
3.0
3.3
Tj 150 °C fT VCE=–12V, IE=0.5A –100typ MHz 1.75 0.8
16.2
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz –110typ pF 2.15
+0.2
1.05
-0.1
5.45±0.1 5.45±0.1 0.65 +0.2

-0.1 3.35
B C E

A
A
m
5 m (V C E =–4V)
–1
0.
–6 – –3 –6
mA
A
.4
–0 .3 m A
–5m
–0

–0. 2m A
–4 –2 –4
–5A
p)
Tem
)
emp
mp)
I B =–0. 1mA
se
I C =–3A
se T
e Te
(Ca
(Ca
(Cas
–2 –1 –2
˚C
125
25˚C
–30˚C
0 0 0
0 –2 –4 –6 –0.1 –0.5 –1 –5 –10 –50 –100 0 –1 –2 –3

θ j- a (˚ C/W)
(V C E =–4V) (V C E =–4V)
50000 50000 5
125˚C
Typ 25˚C
10000 10000
–30˚C
5000 5000
1000 1000 1
500 500
0.5
100 100
–0.01 –0.05 –0.1 –0.5 –1 –5 –6 –0.01 –0.05 –0.1 –0.5 –1 –5 –6 1 10 100 1000 2000

(V C E =–12V)
120 –20 60
Typ –10
100
–5 10
m
s
10
ith
0m
80 s 40
In
DC
fin
ite
he
–1
60
at
si
nk
–0.5
40 20
Without Heatsink
20
Without Heatsink
3.5
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 6 –5 –10 –50 –100 –150 0 25 50 75 100 125 150
58
2SC2023
Silicon NPN Triple Diffused Planar Transistor Application : Series Regulator, Switch, and General Purpose
10.2±0.2 4.8±0.2
3.0±0.2
VCBO 300 V ICBO VCB=300V 1.0max mA 2.0±0.1
VCEO 300 V IEBO VEB=6V 1.0max mA
16.0±0.7
VEBO 6 V V(BR)CEO IC=25mA 300min V
8.8±0.2
a ø3.75±0.2
IC 2 A hFE VCE=4V, IC=0.5A 30min
b
IB 0.2 A VCE(sat) IC=1.0A, IB=0.2A 1.0max V
PC 40(Tc=25°C) W fT VCE=12A, IE=–0.2A 10typ MHz 1.35
4.0max
12.0min
Tj 150 °C COB VCB=10V, f=1MHz 75typ pF
Tstg –55 to +150 °C 0.65 +0.2
-0.1
2.5 2.5 1.4


100 100 1.0 –5 100 –200 0.3typ 4.0typ 1.0typ b. Lot No.

(V CE =4V)
2 3 2
mA
B=
200
I

mp)
mp)
1 1
p)
e Te
ase Tem
ase Te
A /s to p
(Cas
I B =2 0m
1
25˚C (C
125˚C
–30˚C (C
2A
I C =1A
0 0 0
0 1 2 3 4 0 0.1 0.2 0.3 0 0.2 0.4 0.6 0.8 1.0

θ j - a (˚C /W )
(V C E =4V) (V C E =4V)
200 200 5
˚C
100 100 125

Typ
25˚C
50 50 ˚C 1
–30
0.5
10 10 0.2
3 10 100 1000 2000 3 5 10 50 100 500 1000 2000 1 10 100 1000 2000
Collector Current I C (mA) Collector Current I C (mA) Time t(ms)

(V C E =12V)
20 10 40
Natural Cooling
5 Silicone Grease
Ma ximum Po we r Dissipatio n P C ( W)
Heatsink: Aluminum
1m
5m
in mm
20
Typ
30
ms
s
D
C
ith
1
In
fin
ite
0.5
he
10 20
at
150x150x2
si
nk
100x100x2
0.1 10
0.05 Natural Cooling
Without Heatsink
2
0 0.02 0
–0.003 –0.01 –0.05 –0.1 –0.5 –1 2 10 100 500 0 25 50 75 100 125 150
59
LAPT 2SC2837
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1186) Application : Audio and General Purpose
15.6±0.4 4.8±0.2
5.0±0.2
µA
2.0
1.8
VCBO 150 V ICBO VCB=150V 100max 9.6 2.0±0.1
VCEO 150 V IEBO VEB=5V 100max µA

19.9±0.3
4.0
a
IC 10 A hFE VCE=4V, IC=3V 50min∗ ø3.2±0.1
b
IB 2 A VCE(sat) IC=5A, IB=0.5A 2.0max V
PC 100(Tc=25°C) W fT VCE=12V, IE=–1A 70typ MHz 2
4.0max
20.0min
Tj 150 °C COB VCB=80V, f=1MHz 60typ pF 3
-0.1 0.65 +0.2
-0.1

B C E
5.45±0.1 1.4

60 12 5 –5 500 –500 0.2typ 1.4typ 0.35typ b. Lot No.

(V CE =4V)
10 3 10
A A
400
m 300m
A
8 200m 8
A
160m

2
12 0m A
6 6
80mA
4 4
p)
p)
40mA
em
I C =10A
Tem
1
eT
as
se
(C
I B =20mA
(Ca
2 2
5˚C
5A
˚C
˚C
12
–30
0 0 0 25
0 1 2 3 4 0 0.5 1.0 1.5 2.0 0 1 2

θ j - a (˚ C/W)
(V C E =4V) (V C E =4V)
200 200 3
125˚C
Typ 25˚C
100 100
–30˚C 1
50 50
0.5
20 20 0.2
0.02 0.1 1 10 0.02 0.05 0.1 0.5 1 5 10 1 10 100 1000 2000

(V C E =12V)
120 30 100
10

m
100
s
10
D
ith
Collector Curre nt I C ( A)
Typ C
80
In
5
fin
ite
he
60 50
at
si
nk
40 1
Without Heatsink
0.5 Natural Cooling
20
Without Heatsink
0.2 3.5
0 0
–0.02 –0.1 –1 –6 2 10 100 200 0 25 50 75 100 125 150
60
LAPT 2SC2921
6.0±0.2
µA
36.4±0.3
VCBO 160 V ICBO VCB=160V 100max
24.4±0.2 2.1
VCEO 160 V IEBO VEB=5V 100max µA 2-ø3.2±0.1 9
7
50min∗
21.4±0.3
IC 15 A hFE VCE=4V, IC=5A a
IB 4 A VCE(sat) IC=5A, IB=0.5A 2.0max V b
PC 150(Tc=25°C) W fT VCE=12V, IE=–2A 60typ MHz

2
4.0max
20.0min
-0.1
0.65 +0.2
-0.1
5.45±0.1 5.45±0.1 3.0 +0.3

-0.1
B C E

(V CE =4V)
15 3 15
A mA mA
0m
A
60 500 400
0m
mA
75
300
A
200m

10 15 0m A 2 10
10 0m A
p)
p)
em
50mA
Tem
5 1 5
eT
as
se
(C
(Ca
I C =10A
5˚C
I B =20mA
˚C
12
˚C
–30
5A
25
0 0 0
0 1 2 3 4 0 0.2 0.4 0.6 0.8 1.0 0 1 2

θ j - a (˚ C/W)
(V C E =4V) (V C E =4V)
200 200 2
125˚C
100 Typ 1
100 25˚C
50 –30˚C 0.5
50
10 20 0.1
0.02 0.1 0.5 1 10 15 0.02 0.1 0.5 1 5 10 15 1 10 100 1000 2000

(V C E =12V)
80 40 160
10
m
Typ s
60 D 120
10
W
C
ith
In
fin
5
ite
he
40 80
at
si
nk
20 1 40
Without Heatsink
Natural Cooling
0.5
Without Heatsink
5
0 0.3 0
–0.02 –0.1 –1 –10 2 10 100 200 0 25 50 75 100 125 150
61
LAPT 2SC2922
36.4±0.3 6.0±0.2
VCBO 180 V ICBO VCB=180V 100max µA
24.4±0.2 2.1
7
30min∗
21.4±0.3
IC 17 A hFE VCE=4V, IC=8V a
PC 200(Tc=25°C) W fT VCE=12V, IE=–2A 50typ MHz

2
4.0max
20.0min
0.65 +0.2
Tstg –55 to +150 °C ∗hFE Rank O(30 to 60), Y(50 to 100), P(70 to 140), G(90 to 180) 1.05 +0.2
-0.1
-0.1
5.45±0.1 5.45±0.1 3.0 +0.3

-0.1
B C E
(V) (Ω) (A) (V) (A) (A) (µs) (µs) (µs) a. Part No.

(V CE =4V)
17 3 17
1A mA mA
A
70
0 600 mA
1.5
500
15 15
A
400m
30 0mA

A 2
200m
10 10
100 mA
p)
em
p)
I C =10A
Tem
eT
1
5 5
as
se
50mA
(C
(Ca
5˚C
5A
˚C
I B =20mA 12
˚C
–30
25
0 0 0
0 1 2 3 4 0 0.2 0.4 0.6 0.8 1.0 0 1 2 2.4

θ j - a (˚ C/W)
(V C E =4V) (V C E =4V)
200 200 2
125˚C
100 100 1
Typ 25˚C
–30˚C
50 50 0.5
10 10 0.1
0.02 0.1 0.5 1 5 10 17 0.02 0.1 0.5 1 5 10 17 1 10 100 1000 2000

(V C E =12V)
80 50 200
10

m
160
s
60 DC
W
Typ 10
ith
In
fin
5 120
ite
he
40
at
si
nk
80
1
20
Without Heatsink 40
0.5
Natural Cooling
Without Heatsink
5
0 0.2 0
–0.02 –0.1 –1 –5 –10 2 10 100 300 0 25 50 75 100 125 150
62
2SC3179
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1262) Application : Audio and General Purpose
10.2±0.2 4.8±0.2
3.0±0.2
VCBO 80 V ICBO VCB=80V 100max µA 2.0±0.1
16.0±0.7
8.8±0.2
a ø3.75±0.2
IC 4 A hFE VCE=4V, IC=1V 40min
b
PC 30(Tc=25°C) W fT VCE=12V, IE=–0.2A 15typ MHz 1.35
4.0max
12.0min
Tstg –55 to +150 °C 0.65 +0.2
-0.1

B C E
2.5 1.4
20 10 2 10 –5 200 –200 0.2typ 1.9typ 0.29typ b. Lot No.

(V CE =4V)
4 4
A
A 80m
0 0m
60mA
=1
IB
1.0
3 3

40mA
30mA
2 2
p)
)
)
em
mp
mp
20mA 0.5
eT
Te
Te
3A
as
se
se
(C
(Ca
Ca
1 10mA 1
5˚C
C(
2A
˚C
12
25˚
–30
I C =1 A
0 0 0
0 1 2 3 4 0.005 0.01 0.05 0.1 0.5 1 0.4 0.6 0.8 1.0 1.2

θ j- a ( ˚C/W)
(V C E =4V) (V C E =4V)
500 200 5
125˚C
100
Typ 25˚C
100
–30˚C
50
50 1
20 20 0.5
0.01 0.1 0.5 1 4 0.02 0.1 0.5 1 4 1 10 100 1000

(V C E =12V)
40 10 30
1m
10
Maximu m Power Dissipa tion P C (W)

m
5
s
10
0m
30
W
s
ith
D 20
In
C
fin
ite
he
20 Typ
at
si
nk
10
10 0.5 Without Heatsink

Natural Cooling
Without Heatsink
2
0 0.2 0
–0.005 –0.01 –0.1 –0.5 –1 –4 3 10 50 100 0 25 50 75 100 125 150
63
LAPT 2SC3263
15.6±0.4 4.8±0.2
5.0±0.2
µA
2.0
1.8

VEBO V(BR)CEO IC=25mA 230min V
19.9±0.3
5 V
4.0
a
IC 15 A hFE VCE=4V, IC=5A 50min∗ ø3.2±0.1
b
4.0max
20.0min
-0.1 0.65 +0.2
-0.1

B C E

(V C E =4V)
15 3 15
0A 5A A
0A
2. 1. 1.0
3.
mA
600
mA
400

10 2 10
A
200m
10 0m A
Tem )
p
p)
em
p)
Tem
eT
5 1 5
50mA I C =10A
as
se
se
(C
Ca
(Ca
5˚C
C(
˚C
12
I B =20mA
25˚
–30
5A
0 0 0
0 1 2 3 4 0 0.5 1.0 1.5 2.0 0 1 2

θ j - a (˚ C/W)
(V C E =4V) (V C E =4V)
200 200 3
125˚C
100 100
Typ 25˚C
1
–30˚C
50 50
0.5
10 10 0.1
0.02 0.1 0.5 1 5 10 15 0.02 0.1 0.5 1 5 10 15 1 10 100 1000 2000

(V C E =12V)
100 40 130
10
m
s
80
10 100
DC
ith
Typ 5
In
fin
60
ite
he
at
si
nk
40 1 50
0.5
20 Without Heatsink
Natural Cooling
Without Heatsink
3.5
0 0.1 0
–0.02 –0.1 –1 –10 3 10 100 300 0 25 50 75 100 125 150
64
LAPT 2SC3264
36.4±0.3 6.0±0.2
VCBO 230 V ICBO VCB=230V 100max µA 24.4±0.2 2.1
7
21.4±0.3
IC 17 A hFE VCE=4V, IC=5A 50min∗ a
4.0max
20.0min
0.65 +0.2
∗hFE Rank O(50 to 100), Y(70 to 140)
-0.1
Tstg –55 to +150 °C 1.05 +0.2
-0.1
5.45±0.1 5.45±0.1 3.0 +0.3

-0.1

60 12 5 10 –5 0.5 –0.5 0.30typ 2.40typ 0.50typ b. Lot No.

(V C E =4V)
17 3 17
0 A 0A 1.5
A
3. 2.
A
15 1.0 15
A
600m

A
400m 2
10 10
A
200m
p)
mp)
10 0m A
em
e Te
eT
1
Cas
5 I C =10A 5
(Cas
50mA
˚C (
–30˚C
125
I B =20mA 5A 25˚C
0 0 0
0 1 2 3 4 0 0.5 1.0 1.5 2.0 0 1 2 3

θ j- a ( ˚C/W)
(V C E =4V) (V C E =4V)
200 200 3
125˚C

100 100
25˚C
Typ
1
–30˚C
50
50
0.5
10
10 0.1
0.02 0.1 0.5 1 5 10 17 0.02 0.1 0.5 1 5 10 17 1 10 100 1000 2000

(V C E =12V)
100 40 200
10
m
s
80 160
10 DC
Cut-o ff Fr eque ncy f T ( MH Z )
W
ith
Typ 5
In
fin
60 120
ite
he
at
si
nk
40 1 80
0.5
20 Without Heatsink
Natural Cooling 40
Without Heatsink
5
0 0.1
–0.02 –0.1 –1 –10 3 10 100 300 0
0 25 50 75 100 125 150
65
LAPT 2SC3284
15.6±0.4 4.8±0.2
5.0±0.2
µA
2.0
1.8

VEBO 150min V
19.9±0.3
5 V V(BR)CEO IC=25mA
4.0
a
b
4.0max
20.0min
-0.1 0.65 +0.2
-0.1
5.45±0.1 5.45±0.1 1.4


A (V C E =4V)
14 0m 3 14
60 mA
mA
A
0 400 A
0m
5 0 3 00m
75
12
A
200m

10
15 0m A
2
8 10 0m A
p)
p)
50mA 5
em
Tem
1
eT
4
se
as
(Ca
(C
I C =10A
5˚C
I B =20mA
˚C
˚C
12
–30
25
5A
0 0 0
0 1 2 3 4 0 0.2 0.4 0.6 0.8 1.0 0 1 2

θ j- a ( ˚C/W)
(V C E =4V) (V C E =4V)
200 200 3
125˚C
100 100 25˚C 1

Typ
–30˚C
0.5
50 50
20 20 0.1
0.02 0.1 0.5 1 5 10 14 0.02 0.1 0.5 1 5 10 14 1 10 100 1000 2000

(V C E =12V)
80 40 130
1m
10 s
m
10 s
Typ 0m 100
60 10 s
W
D
ith
C
In
fin
5
ite
he
40
at
si
nk
50
1
20
Without Heatsink
0.5 Natural Cooling
Without Heatsink
3.5
0 0.2 0
–0.02 –0.1 –1 –10 3 10 100 200 0 25 50 75 100 125 150
66
LAPT
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1386/A)
2SC3519/3519A
Application : Audio and General Purpose
Ratings Ratings
2SC3519 2SC3519A 2SC3519 2SC3519A
15.6±0.4 4.8±0.2
5.0±0.2
µA
2.0
1.8
VCBO 160 180 V 100max 9.6 2.0±0.1
ICBO
VCEO 160 180 V VCB= 160 180 V
VEBO 5 V IEBO 100max µA
19.9±0.3
VEB=5V
4.0
a ø3.2±0.1
IC 15 A V(BR)CEO IC=25mA 160min 180min V
b
IB 4 A hFE VCE=4V, IC=5A 50min∗
PC 130(Tc=25°C) W VCE(sat) IC=5A, IB=0.5A 2.0max V 2
4.0max
20.0min
Tj 150 °C fT VCE=12V, IE=–2A 50typ MHz 3
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 250typ pF 1.05 +0.2

-0.1 0.65 +0.2
-0.1

5.45±0.1 5.45±0.1 1.4
0.2typ b. Lot No.
40 4 10 10 –5 1 –1 1.3typ 0.45typ

(V C E =4V)
15 3 15
A mA
A
m A
500 m
0m
6 00 400
70
mA
300
A
200m

10 2 10
10 0m A
p)
)
I C =10A
em
mp
5 1 5
eT
Te
50mA
as
se
(C
(Ca
C
5˚
I B =20mA 5A
˚C
12
˚C
–30
0 0 0 25
0 1 2 3 4 0 0.2 0.4 0.6 0.8 1.0 0 1 2

θ j- a ( ˚C/W)
(V C E =4V) (V C E =4V)
300 300 3
125˚C
100 100 1
Typ 25˚C
–30˚C 0.5
50 50
10 10 0.1
0.02 0.1 0.5 1 5 10 15 0.02 0.1 0.5 1 5 10 15 1 10 100 1000 2000

(V C E =12V)
80 40 130
10
ms
10
100
60 DC
W
Typ 5
ith
In
fin
ite
he
40
at
1
si
nk
Without Heatsink
0.5 Natural Cooling 50
1.2SC3519
20 2.2SC3519A
0.1
1 2 Without Heatsink
3.5
0 0.05 0
–0.02 –0.1 –1 –5 –10 5 10 50 100 200 0 25 50 75 100 125 150
67
2SC3678
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) Application : Switching Regulator and General Purpose
15.6±0.4 4.8±0.2
5.0±0.2
µA
2.0
VCBO 900 ICBO 100max
1.8
V VCB=800V 9.6 2.0±0.1

19.9±0.3
4.0
hFE 10 to 30 a
IC 3(Pulse6) A VCE=4V, IC=1A ø3.2±0.1
b
IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max V
PC 80(Tc=25°C) W VBE(sat) IC=1A, IB=0.2A 1.2max V 2
4.0max
20.0min
Tj 150 °C fT VCE=12V, IE=–0.3A 6typ MHz 3
-0.1 0.65 +0.2
-0.1

B C E
250 250 1 10 –5 0.15 –0.5 1max 5max 1max b. Lot No.
I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
500mA 400mA (I C /I B =5) (V CE =4V)
3 3
Base-Emitter Saturation Voltage V B E (s at) (V)
300mA
1 V B E (sat)

p)
–55˚C (Case Tem
200 mA
2 2
e Temp)
25˚C (Cas
mp)
mp)
Temp)
p)
e Te
100mA (Case
ase Tem
ase Te
125˚C
(Cas
e m p)
25˚C (C
1 1
125˚C
I B =50mA
–55˚C (C
eT
2 5 Cas
(
˚C
˚C
–55
V C E (sat) 5˚C
12
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 3 0 0.2 0.4 0.6 0.8 1. 0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)
h FE – I C Characteristics (Typical) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚C /W )
(V C E =4V)
50 8 3
t on • t st g• t f ( µ s)
125˚C
5
t s tg
25˚C V C C 250V
I C :I B 1 :–I B2
=2:0.3:1Const.
1
Switching T im e
–55˚C
1
tf
10
0.5 0.5
t on
5 0.2 0.3
0.01 0.05 0.1 0.5 1 3 0.1 0.5 1 3 1 5 10 50 100 500 1000
Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
10 10 80
5 5
10
0µ
60
W
s
ith
Collecto r Curr ent I C (A)
In
fin
ite
he
1 1 40
at
si
nk
Without Heatsink
0.5 0.5 Natural Cooling
Without Heatsink L=3mH
Natural Cooling IB2=–1.0A 20
Duty:less than 1%
Without Heatsink
0.1 3.5
0.1 0
50 100 500 1000 50 100 500 1000 0 25 50 75 100 12 5 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
68
2SC3679
15.6±0.4 4.8±0.2
5.0±0.2
2.0
µA
1.8
19.9±0.3
4.0
a ø3.2±0.1
IC 5(Pulse10) A hFE VCE=4V, IC=2A 10 to 30
b
4.0max
20.0min

-0.1 0.65 +0.2
-0.1

B C E
5.45±0.1 1.4
250 125 2 10 –5 0.3 –1 1max 5max 1max b. Lot No.
700mA 600mA (I C /I B =5) (V CE =4V)
5 5
500mA
4 400 mA 4

2
300mA
3 3
mp)
200mA
)
Temp
p)
e Te
ase Tem
V B E (sat)
(Cas
(Case
2 1 2
I B =100mA –55˚C (Case Temp)
125˚C
–55˚C (C
25˚C (Case Temp)
25˚C
e Temp)
125˚C (Cas
m p)
C
1 1
–5 5 ˚C
25˚
Te
e
C as
V C E (sat) 125˚C (
0 0 0
0 1 2 3 4 0.03 0.05 0.1 0.5 1 5 10 0 0.2 0.4 0.6 0.8 1.0 1.2

θ j - a ( ˚ C/W)
(V C E =4V)
50 10 2
t on• t s t g • t f (µ s)
5 t s tg
125˚C
V C C 250V
1
25˚C I C :I B1 :–I B 2
=2:0.3:1Const.
0.5
Swi tchi ng T im e
–55˚C
1 tf
10
0.5
t on
5 0.2 0.1
0.02 0.05 0.1 0.5 1 5 0.1 0.5 1 5 1 10 100 1000
20 20 100
10 10
10 1m 10
10
m 0µ
s s s
µs
5 5
10
0m
W
s
ith

DC
In
fin
( Tc
1 1
ite
=2
he
5
0.5 0.5 50
at
C)
si
nk
Without Heatsink
0.1 Without Heatsink 0.1 Natural Cooling
Natural Cooling L=3mH
0.05 0.05 IB2=–1.0A
Duty:less than1%
Without Heatsink
3.5
0.01 0.01 0
5 10 50 100 500 1000 50 100 500 1000 0 25 50 75 100 125 150
69
2SC3680
15.6±0.4 4.8±0.2
5.0±0.2
µA
2.0
1.8

19.9±0.3
4.0
a
IC 7(Pulse14) A hFE VCE=4V, IC=3A 10 to 30 ø3.2±0.1
b
4.0max
20.0min
-0.1 0.65 +0.2
-0.1

B C E
5.45±0.1 1.4
250 83 3 10 –5 0.45 –1.5 1max 5max 1max b. Lot No.
(I C /I B =5) (V CE =4V)
7 7
1A
700m A
6 V B E (sat) 6
1
500mA

–55˚C (C ase Temp)
p)
300 mA ase Tem
4 25˚C (C 4
mp)
)
Temp
p)
)
e Te
200mA emp
ase T
ase Tem
(C
125˚C
(Cas
(Case
)
emp
I B =100mA
125˚C
–55˚C (C
eT
25˚C
2 2
as
(C
˚C
˚C
25
5
12
V C E (sat) 5˚C
–5
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 7 0 0.2 0.4 0.6 0.8 1.0 1.2

θ j - a ( ˚ C/W)
(V C E =4V)
50 10 2
12
t on• t st g• t f (µ s)
5˚
25˚C C 5 t s tg
V C C 250V 1
I C :I B1 :I B2 =2:0.3:–1Const.
–55˚C
0.5
Swi tchi ng T im e
1 tf
10
0.5
t on
5 0.2 0.1
0.02 0.05 0.1 0.5 1 5 7 0.1 0.5 1 5 7 1 10 100 1000
20 20 120
10 10
10 1m 0µ 10
m s
s
s 100
5 5
W
ith
In
fin
1 1
ite
he
0.5 0.5
at
si
nk
50
Without Heatsink
0.05 0.05 IB2=–1.0A
Duty:less than 1%
Without Heatsink
3.5
0.01 0.01 0
2 5 10 50 100 500 1000 50 100 500 1000 0 25 50 75 100 125 150
70
2SC3830
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application : Switching Regulator and General Purpose
10.2±0.2 4.8±0.2
3.0±0.2
VCBO 600 V ICBO VCB=600V 1max mA 2.0±0.1

VEBO 10 V(BR)CEO IC=25mA 500min V
16.0±0.7
V
8.8±0.2
10 to 30 a ø3.75±0.2
IC 6(Pulse12) A hFE VCE=4V, IC=2A
b
PC 50(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A 1.3max V 1.35
4.0max
12.0min
Tj 150 °C fT VCE=12V, IE=–0.5A 8typ MHz
-0.1

B C E
2.5 1.4
200 100 2 10 –5 0.2 –0.4 1max 4.5max 0.5max b. Lot No.
(I C /I B =5) (V C E =4V)
6 2 6
1A 80 0m A
5 60 0m A 5

4 400 mA 4
300mA V B E (sat)
3 1 3
p)
200mA –55˚C (Case Tem
mp)
Temp)
)
m p)
25˚C (Case
mp
)
emp
e Te
Te
2 2
2 5 e Te
p)
ase Tem
se T
I B =100mA 125˚C (C
se
(Cas
(Ca
as
˚C
(Ca
(C
–55˚C
˚C
C
1 5˚ 1
25˚C
125
12 C
5˚
V C E (sat) –5
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

θ j - a (˚ C/W)
(V C E =4V)
50 7 4
5
125˚C
t s tg
25˚C V C C 200V
I C :I B1 :I B 2 =10:1:–2
–55˚C 1
Swi tchi ng T im e
1
0.5
t on
10
0.5
tf
5 0.1 0.3
0.02 0.05 0.1 0.5 1 5 6 0.2 0.5 1 5 6 1 10 100 1000
20 20 50
10
10 0µ
s 10
5 5 40
1m
W
s
10
ith

ms
In
D
fin
C
30
ite
1 1
he
at
0.5 0.5
si
nk
20
Without Heatsink
Natural Cooling
0.1 Without Heatsink 0.1 L=3mH
0.05 0.05 Duty:less than 1%
Without Heatsink
2
0.02 0.02 0
7 10 50 100 500 600 50 100 500 600 0 25 50 75 100 125 150
71
2SC3831
15.6±0.4 4.8±0.2
5.0±0.2
2.0
1.8
VCBO 600 V ICBO VCB=600V 1max mA 9.6 2.0±0.1
19.9±0.3
4.0
a ø3.2±0.1
b
IB 4 A VCE(sat) IC=5A, IB=1A 0.5max V
PC 100(Tc=25°C) W VBE(sat) IC=5A, IB=1A 1 . 3 max V 2
4.0max
20.0min

-0.1 0.65 +0.2
-0.1
5.45±0.1 5.45±0.1 1.4

(I C /I B =5) (V CE =4V)
10 10
A
1A
.2
800 mA
=1
V B E (sat)
IB
1
8 60 0m A 8

e Temp)
–55˚C (Cas
400 mA p)
6 ase Tem 6
25˚C (C
p)
Temp
mp)
(Case
Tem
)
125˚C
Temp
200mA
)
e Te
4
mp
se
Te
(Ca
(Cas
(Case
se
˚C
100mA
a
25˚C
(C
125
˚C
–55˚C
2 C
5˚ 2
25
12
C
5˚
V C E (sat) –5
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 10 0 0.2 0.4 0.6 0.8 1.0 1.2

θ j- a ( ˚C/W)
(V C E =4V)
50 10 2
t on • t st g• t f (µ s)
125˚C 5
t s tg
25˚C 1
V C C 200V
I C :I B 1 :I B 2 =10:1:–2
–5 5˚C
0.5
Switching T im e
0.5 t on
10
tf
5 0.1 0.1
0.02 0.05 0.1 0.5 1 5 10 0.2 0.5 1 5 10 1 10 100 1000
30 30 100
10
1m 0µ
s
10 s 10
Maxim um Power Dissipatio n P C ( W)
5 5
10
W
ms
ith
In
D
fin
C
ite
1 1
he
50
at
si
0.5 0.5
nk
Without Heatsink
Without Heatsink Natural Cooling
0.1 Natural Cooling 1 L=3mH
I B 2 =–0.5A
Without Heatsink
0.02 3.5
0.01 0
8 10 50 100 500 600 50 100 500 600 0 25 50 75 100 125 150
72
2SC3832
10.2±0.2 4.8±0.2
3.0±0.2

V(BR)CEO
16.0±0.7
VEBO 10 V IC=25mA 400min V
8.8±0.2
a ø3.75±0.2
b
4.0max
12.0min
-0.1
2.5 2.5 1.4

200 66.7 3 10 –5 0.3 –0.6 1max 3max 0.5max b. Lot No.
(I C /I B =5) (V C E =4V)
7 7
60 0m A
A
0m
6 6
80
400mA
V B E (sat)

1
300mA
e Temp)
–55˚C (Cas
4 4
200mA e Temp)
25˚C (Cas
p)
Tem
)
mp)
emp
)
Temp
(Case
125˚C
p)
e Te
se
se T
2 5 Tem
(Ca
I B =100mA
(Cas
(Ca
2 2
˚C
e
˚C
as
125
25˚C
–55˚C
(C
C
5˚
12 C
5˚
V C E (sat) –5
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 7 0 0.2 0.4 0.6 0.8 1.0 1.2

θ j - a (˚ C/W)
(V C E =4V)
50 10 4
t o n • t s t g• t f ( µ s)
125˚ C 5 t s tg
25˚C V C C 200V
I C :I B1 :–I B 2 =10:1:2
–30 ˚C
Sw it ching Time
1
1
0.5
t on
10
0.5
tf
5 0.1 0.3
0.02 0.05 0.1 0.5 1 5 7 0.2 0.5 1 5 1 10 100 1000
20 20 50
10
0µ
10 s 10
40
5
W
5
ith
In
fin
30
ite
he
at
si
1 1
nk
Without Heatsink 20
Natural Cooling
0.5 0.5
Natural Cooling –IB2=1A
Duty:less than 1% 10
Without Heatsink
0.1 2
0.1 0
5 10 50 100 500 5 10 50 100 500 0 25 50 75 100 125 150
73
2SC3833
15.6±0.4
5.0±0.2
2.0
1.8
VCBO 500 V ICBO VCB=500V 100max µA 9.6 2.0±0.1
19.9±0.3
4.0
a ø3.2±0.1
b
4.0max
20.0min

-0.1 0.65 +0.2
-0.1
5.45±0.1 5.45±0.1 1.4

200 28.5 7 10 –5 0.7 –1.4 1.0max 3.0max 0.5max b. Lot No.
(I C /I B =5) (V CE =4V)
12 12
A
1000m
80 0m A
10 10
V B E (sat)

60 0m A
1
8 8
Temp)
–55˚C (Case
400m A
e Temp)
6 25˚C (Cas 6
p)
mp)
Tem
emp )
)
ase T
Temp
e Te
)
(C
2 5 Temp
se
200mA 125˚C
(Ca
4 4
(Cas
(Case
˚C
e
˚C
as
25˚C
125
I B =100mA
(C
–55˚C
2 5˚ 2
12 C
5˚
V C E (sat) –5
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 10 0 0.2 0.4 0.6 0.8 1.0 1.2
h FE – I C Characteristics (Typical) t on •t st g • t f – I C Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚ C/W)
(V C E =4V)
50 8 2
125˚C 5
t s tg
1
25˚C V C C 200V
I C :I B1 :–I B2 =10:1:2
–30˚C 0.5
1
Swit ching Time
0.5
10 t on
tf
5 0.1 0.1
0.02 0.05 0.1 0.5 1 5 10 12 0.5 1 5 10 1 10 100 1000
30 30 100
10
0µ
s
10 10
1ms
10
5 5
DC
ms
W
(T
ith

c=
In
25
fin
1
ite
C
1
)
he
50
at
0.5 0.5
si
nk
Without Heatsink
0.05 0.05 –IB2=1A
Duty:less than 1%
Without Heatsink
0.01 3.5
0.01 0
5 10 50 100 500 5 10 50 100 500 0 25 50 75 100 125 150
74
2SC3834
Silicon NPN Triple Diffused Planar Transistor (Switching Transistor) Application : Humidifier, DC-DC Converter, and General Purpose
10.2±0.2 4.8±0.2
3.0±0.2
16.0±0.7
8.8±0.2
a ø3.75±0.2
b
4.0max
12.0min
-0.1
2.5 2.5 1.4


(V CE =4V)
7 2.6 7
m A A
200 1 50m
6 6
mA
100 2

5 5
60mA
A
4 40m 4
p)
mp)
Tem
5A
)
Temp
e Te
3 20 mA 3
3A
se
1
I C= 1
(Ca
(Cas
(Case
˚C
A
2 2
25˚C
125
I B =10mA
–30˚C
1 1
0 0 0
0 1 2 3 4 0.005 0.01 0.05 0.1 0.5 1 0 0.5 1.0 1.1

θ j- a (˚ C/W)
(V C E =4V) (V C E =4V)
200 300 4
1 2 5 ˚C
Typ
100 C
25˚
100
˚C
–30 1
50
50
0.5
20 20 0.3
0.02 0.1 0.5 1 5 7 0.01 0.05 0.1 0.5 1 5 7 1 10 100 1000

(V C E =12V)
30 20 50
10
0m
s
10
40
5
W
10
ith
ms
20
In
fin
30
ite
he
1
at
si
nk
0.5 20
10 Without Heatsink
Natural Cooling
10
0.1
Without Heatsink
2
0 0.05 0
–0.01 –0.05 –0.1 –0.5 –1 –5 5 10 50 120 200 0 25 50 75 100 125 150
75
2SC3835
Silicon NPN Triple Diffused Planar Transistor (Switching Transistor) Application : Humidifier, DC-DC Converter, and General Purpose
15.6±0.4 4.8±0.2
5.0±0.2
µA
2.0
1.8

19.9±0.3
4.0
a
b
4.0max
20.0min
-0.1 0.65 +0.2
-0.1

B C E

(V C E =4V)
7 2.6 7
A A
2 00m 1 50m
6 6
mA
100 2

5 5
60mA
A
4 40m 4
p)
mp)
Tem
5A
)
Temp
e Te
3 20 mA 3
3A
se
1
I C= 1
(Ca
(Cas
(Case
˚C
A
2 2
25˚C
125
I B =10mA
–30˚C
1 1
0 0 0
0 1 2 3 4 0.005 0.01 0.05 0.1 0.5 1 0 0.5 1.0 1.1

θ j - a (˚ C/W)
(V C E =4V) (V C E =4V)
200 300 5
1 2 5 ˚C
Typ
100 C
25˚
100
˚C
–30
50
50 1
0.5
20 20 0.4
0.02 0.1 0.5 1 5 7 0.01 0.05 0.1 0.5 1 5 7 1 10 100 1000 2000

(V C E =12V)
30 20 70
10
0µ
s
10
60
5
Cut-o ff Fr equ ency f T (MH Z )
10
50
ith
ms
20
In
fin
ite
40
he
1
at
si
nk
30
0.5
10 Without Heatsink
Natural Cooling 20
10
0.1
Without Heatsink
3.5
0 0.05 0
–0.01 –0.05 –0.1 –0.5 –1 –5 5 10 50 120 200 0 25 50 75 100 125 150
76
2SC3851/3851A
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1488/A) Application : Audio and PPC High Voltage Power Supply, and General Purpose
Ratings Ratings
2SC3851 2SC3851A 2SC3851 2SC3851A 10.1±0.2
4.0±0.2
2.8 c0.5
VCBO 80 100 V 100max µA
ICBO
8.4±0.2
VCEO 60 80 V VCB= 80 100 V
16.9±0.3
VEBO 6 V IEBO VEB=6V 100max µA ø3.3±0.2
a
IC 4
0.8±0.2
A V(BR)CEO IC=25mA 60min 80min V b
IB 1 A hFE VCE=4V, IC=1A 40 to320
±0.2
3.9
PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=0.2A 0.5max V
13.0min
1.35±0.15
1.35±0.15
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) B C E a. Part No.
12 6 2 10 –5 200 –200 0.2typ 1typ 0.3typ b. Lot No.

(V CE =4V)
4 4
60 m A
A
0m
50mA
=7
IB
40mA
1.0

3 3
30mA
20mA
p)
2 2
Tem
)
emp
mp)
se
se T
0.5
(Ca
e Te
10mA 3A
(Ca
˚C
(Cas
125
1 1
25˚C
2A
5mA
–30˚C
I C =1 A
0 0 0
0 1 2 3 4 5 6 0.005 0.01 0.05 0.1 0.5 1 0 0.5 1.0 1.2

θ j - a (˚C/W)
(V C E =4V) (V C E =4V)
500 500 5
125˚C
Typ
25˚ C
100 100
– 3 0 ˚C
50 50 1
20 20 0.5
0.01 0.1 0.5 1 4 0.01 0.05 0.1 0.5 1 4 1 10 100 1000

(V C E =12V)
40 10 30
1m
s
5 10
m
10 s
0m
30 s
DC 20
ith
In
fin
1
ite
20 Typ
he
at
0.5
si
nk
10
10 Without Heatsink
Natural Cooling
0.1
Without Heatsink
0 0.05 0
–0.005 –0.1 –0.5 –1 –4 3 5 10 50 80 0 50 100 150
77
High hFE
LOW VCE (sat) 2SC3852/3852A
Silicon NPN Epitaxial Planar Transistor Application : Driver for Solenoid and Motor, Series Regulator and General Purpose
Ratings Ratings
2SC3852 2SC3852A 2SC3852 2SC3852A 10.1±0.2
4.0±0.2
2.8 c0.5
ICBO
8.4±0.2
VCEO 60 80 V VCB= 80 100 V
16.9±0.3
a
IC 3 V(BR)CEO IC=25mA
0.8±0.2
A 60min 80min V b
IB 1 A hFE VCE=4V, IC=0.5A 500min
±0.2
3.9
PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=50mA 0.5max V
13.0min
1.35±0.15
1.35±0.15
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) B C E a. Part No.
20 20 1.0 10 –5 15 –30 0.8typ 3.0typ 1.2typ b. Lot No.

(V CE =4V)
3 1.0 3
A
2m 8mA
=1
IB

5mA
2 1.0 2
3mA
p)
mp)
em
)
Temp
2mA
eT
e Te
Cas
(Case
(Cas
1 0.5 1
˚C (
1mA
25˚C
125
3A
–30˚C
2A
0.5mA
I C =1A
0 0 0
0 1 2 3 4 5 6 0.001 0.005 0.01 0.05 0.1 0.5 1 0 0.5 1.0 1.1

θ j - a ( ˚C/W)
(V C E =4V) (V C E =4V)
2000 2000 5
125˚C
1000 1000
Typ 25 ˚C
500 500
– 3 0 ˚C
V CB =10V
I E =–2A
100 100 0.5
0.01 0.1 0.5 1 3 0.01 0.1 0.5 1 3 1 10 100 1000

(V C E =12V)
30 10 30
1m
5 10
s
10 m
s
0m
s
20 DC 20
ith
In
Typ
fin
1
ite
he
at
0.5
si
nk
10 10
Without Heatsink
Natural Cooling
0.1
Without Heatsink
0 0.05 0
–0.005 –0.01 –0.05 –0.1 –0.5 –1 –2 3 5 10 50 100 0 50 100 150
78
2SC3856
15.6±0.4 4.8±0.2
5.0±0.2
µA
2.0
1.8

V(BR)CEO V
19.9±0.3
VEBO 6 V IC=50mA 180min
4.0
a
b
PC 130(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz 2
4.0max
20.0min
-0.1 0.65 +0.2
-0.1
5.45±0.1 5.45±0.1 1.4


(V C E =4V)
15 3 15
A mA
1A
m 0
00 50 A
7 300m
20 0m A

10 2 10
100 mA
mp)
Temp)
mp)
e Te
e Te
5 50mA 1 5
Cas
(Case
(Cas
˚C (
25˚C
–30˚C
125
I B =20mA I C =10A
5A
0 0 0
0 1 2 3 4 0 0.5 1.0 1.5 2.0 0 1 2

θ j- a ( ˚C/W)
(V C E =4V) (V C E =4V)
300 200 3
125˚C
100 1
Typ 25˚C
100
0.5
50 –30˚C
50
20 20 0.1
0.02 0.1 0.5 1 5 10 15 0.02 0.1 0.5 1 5 10 15 1 10 100 1000 2000

(V C E =12V)
30 40 130
3m
10 s
m
10 s
Typ
Maxim um Power Dissi pation P C (W)
0m
s
10 100
D
C
ith
20
In
5
fin
ite
he
at
si
nk
1 50
10
0.5
Without Heatsink
Natural Cooling
Without Heatsink
3.5
0 0.1 0
–0.02 –0.1 –1 –10 3 10 100 200 0 25 50 75 100 125 150
79
2SC3857
36.4±0.3 6.0±0.2
24.4±0.2 2.1
7
21.4±0.3
IB 5 A VCE(sat) IC=10A, IB=1A 3.0max V b
PC 150(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz

2
4.0max
20.0min
0.65 +0.2
-0.1
Tstg –55 to +150 °C 1.05 +0.2
-0.1
5.45±0.1 5.45±0.1 3.0 +0.3

-0.1


(V CE =4V)
15 3 15
mA
5A
1A 0 400m
A
60
1.
20 0m A

10 2 10
10 0m A
p)
)
Tem
Temp
5 I B =50mA 1 5
se
(Case
(Ca
I C =15A
˚C
–30˚C
125
10A
25˚C
5A
0 0 0
0 1 2 3 4 0 1 2 3 4 0 1 2

θ j- a ( ˚C/W)
(V C E =4V) (V C E =4V)
300 300 2
125˚C 1
Typ
100 100 25˚C 0.5
–30˚C
50 50
20 20 0.1
0.02 0.1 0.5 1 5 10 15 0.02 0.1 0.5 1 5 10 15 1 10 100 1000 2000

(V C E =12V)
40 50 160
3m
20 s
m 10ms
s
D
C
30 10 120
10
W
0m
ith
Typ
s
In
5
fin
ite
he
20 80
at
si
nk
10 0.5 Without Heatsink 40

Natural Cooling
Without Heatsink
5
0 0.1
2 10 100 300 0
–0.02 –0.1 –1 –10 0 25 50 75 100 125 150
80
2SC3858
36.4±0.3 6.0±0.2
VCBO 200 V ICBO VCB=200V 100max µA 24.4±0.2 2.1
7
21.4±0.3
V b
IB 5 A VCE(sat) IC=10A, IB=1A 2.5max
4.0max
20.0min
0.65 +0.2
∗hFE Rank Y(50 to 100), P(70 to 140), G(90 to 180)
-0.1
Tstg 1.05 +0.2
–55 to +150 °C -0.1
5.45±0.1 5.45±0.1 3.0 +0.3

-0.1

(V C E =4V)
17 3 17
1A mA mA
5A
70
0 500
1.
15 15
A
300m

20 0m A 2
10 10
100mA
p)
)
Tem
Temp
1
se
5 50mA 5
(Case
(Ca
˚C
I C =15A
125
–30˚C
25˚C
I B =20mA 10A
5A
0 0 0
0 1 2 3 4 0 1 2 3 0 1 2

θ j - a ( ˚ C/W)
(V C E =4V) (V C E =4V)
300 200 2
125˚C
100 1
100 Typ 25˚C
50 –30˚C 0.5
50
20 10 0.1
0.02 0.1 0.5 1 5 10 17 0.02 0.1 0.5 1 5 10 17 1 10 100 1000 2000

(V C E =12V)
30 50 200
3
20 10 ms
m m
s s
Typ
D 160
10
C
0m
10
W
s
ith
20
In
5
fin
120
ite
he
at
si
nk
1 80
10
0.5 Without Heatsink
Natural Cooling 40
Without Heatsink
5
0 0.1
2 10 100 300 0
–0.02 –0.1 –1 –10 0 25 50 75 100 125 150
81
2SC3890
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose
10.1±0.2
4.0±0.2
VCBO 500 ICBO VCB=500V 100max µA 2.8 c0.5
V
8.4±0.2
16.9±0.3
ø3.3±0.2
IC 7(Pulse14) A hFE VCE=4V, IC=3A 10 to 30 a
0.8±0.2
b
PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A 1.3max V
±0.2
3.9
13.0min
Tj 150 °C fT VCE=12V, IE=–0.5A 10typ MHz 1.35±0.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 50typ pF 1.35±0.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
B C E
200 66 3 10 –5 0.3 –0.6 1max 3max 0.5max b. Lot No.
(I C /I B =5) (V C E =4V)
7 7
A
600m
mA

800
6 6
I B=
V B E (sat)
40 0m A

1
300 mA e Temp)
–55˚C (Cas
4 4
Temp)
200 mA 25 ˚C (Case
p)
Tem
)
mp)
emp
T emp)
(Case
125˚C
p)
e Te
se
se T
2 5 Tem
(Ca
100mA
(Cas
(Ca
2 2
˚C
e
˚C
as
125
25˚C
–55˚C
(C
C
5˚
12 C
5˚
V C E (sat) –5
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 7 0 0.2 0.4 0.6 0.8 1.0 1.2

θ j - a (˚ C/W)
(V C E =4V)
70 7 5
t o n• t s t g • t f (µ s)
5
50
t s tg
V C C 200V
Typ I C :I B1 :I B 2 =10:1:–2
1
Swi tchi ng T im e
1
0.5
t on
0.5
10 tf
7 0.1 0.3
0.02 0.05 0.1 0.5 1 5 7 0.2 0.5 1 5 7 1 10 100 1000
20 20 30
10 10 10
M aximu m Power Dissi pation P C (W)
0µ
s
5 5
W
ith
20
In
fin
ite
he
at
si
1 1
nk
Without Heatsink
Without Heatsink 10
Natural Cooling
0.5 Natural Cooling 0.5
L=3mH
–IB2=1A
Duty:less than 1%
Without Heatsink
2
0.1 0.1 0
5 10 50 100 500 5 10 50 100 500 0 25 50 75 100 125 150
82
2SC3927
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose
15.6±0.4 4.8±0.2
5.0±0.2
µA
2.0
VCB=800V 100max
1.8
VCBO 900 V ICBO 9.6 2.0±0.1

19.9±0.3
4.0
10 to 28 a
IC 10(Pulse15) A hFE VCE=4V, IC=5A ø3.2±0.1
b
PC 120(Tc=25°C) W VBE(sat) IC=5A, IB=1A 1.2max V 2
4.0max
20.0min
-0.1 0.65 +0.2
-0.1

B C E
5.45±0.1 1.4
(I C /I B =5) (V CE =4V)
10 10
2A 1A
1.
Base-Emitter Saturation Voltage V B E (s at) (V )
80 0m A V B E (sat)
1
8 8

60 0m A
e Temp)
–55˚C (Cas
p)
6 400m A ase Tem 6
25˚C (C
p)
Temp
)
Temp
(Case
Temp)
em
200mA 125˚C
eT
)
4 4
mp
(Case
Cas
(Case
Te
˚C (
se
I B =100mA
a
25˚C
(C
125
–55˚C
˚C
2 C 2
5˚
25
12 C
˚
V C E (sat) – 55
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 10 0 0.2 0.4 0.6 0.8 1.0 1.2

θ j- a (˚ C/W)
(V C E =4V)
50 10 2
125˚ C
5 t s tg
25 ˚C V C C 250V
1
I C :I B1 :–I B 2 =10:1.5:3
–5 5˚ C
0.5
Swit ching Time
0.5
10 t on
tf
5 0.1 0.1
0.02 0.05 0.1 0.5 1 5 10 0.2 0.5 1 5 10 1 10 100 1000
20 20 120
10 10
DC 10 1m 10
ms 0µ
M aximu m Power Dissipa tion P C (W)
s s 100
5 5
W
ith
In
fin
ite
1 1
he
at
0.5 0.5
si
nk
50
Without Heatsink
0.05 0.05 IB2=–1.0A
Duty:less than 1%
Without Heatsink
3.5
0.02 0.02 0
10 50 100 500 600 50 100 500 1000 0 25 50 75 100 125 150
83
2SC4020
10.2±0.2 4.8±0.2
3.0±0.2
16.0±0.7
8.8±0.2
a ø3.75±0.2
IC 3(Pulse 6) A hFE VCE=4V, IC=0.7A 10 to 30
b
PC 50(Tc=25°C) W VBE(sat) IC=0.7A, IB=0.14A 1.2max V 1.35
4.0max
12.0min
-0.1
2.5 2.5 1.4

250 357 0.7 10 –5 0.1 –0.35 1max 5max 1max b. Lot No.
(I C /I B =5) (V C E =4V)
mA
3 0 2 3
50
40 0m A
300m A

200 mA
2 2
140mA
mp)
mp)
p)
1
100mA
ase Tem
e Te
ase Te
V B E (sat)
(Cas
1 60mA 1
25˚C (C
–30˚C (C
125˚C
I B =20mA
V C E (sat)
0 0 0
0 1 2 3 4 0.03 0.05 0.1 0.5 1 5 0 0.2 0.4 0.6 0.8 1.0 1.2

θ j- a ( ˚C/W)
(V C E =4V)
50 6 5
5
t o n• t s t g• t f (µ s)
125˚C
t s tg
25˚C
VCC 250V
–30˚C IC:IB1:– IB2=2:0.3:1 Const.
Sw it ching Time
10 1
1
tf
5 0.5
0.5
t on
2 0.2 0.3
0.02 0.05 0.1 0.5 1 3 0.1 0.5 1 3 1 10 100 1000 2000
10 10 50
5 5
40
10
0µ
W
s
ith
In
fin
30
ite
he
1 1
at
si
nk
Without Heatsink 20
Natural Cooling IB2=–1.0A
Without Heatsink
0.1 2
0.1 0
50 100 500 1000 50 100 500 1000 0 25 50 75 100 125 150
84
High hFE
LOW VCE (sat) 2SC4024
Silicon NPN Epitaxial Planar Transistor Application : DC-DC Converter, Emergency Lighting Inverter and General Purpose
10.1±0.2
4.0±0.2
2.8 c0.5
8.4±0.2
16.9±0.3
ø3.3±0.2
hFE VCE=4V, IC=1A 300 to 1600 a
IC 10 A
0.8±0.2
b
PC fT VCE=12V, IE=–0.5A 24typ MHz
±0.2
3.9
35(Tc=25°C) W
13.0min
Tj 150 °C COB VCB=10V, f=1MHz 150typ pF 1.35±0.15
1.35±0.15
Tstg –55 to +150 °C
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
VCC RL IC IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (A) (A) (µs) (µs) (µs) a. Part No.
B C E
20 4 5 0.1 –0.1 0.5typ 2.0typ 0.5typ b. Lot No.

(V CE =4V)
10 1.5 10
I B =35m A
8 30mA 8

25mA
1.0
20m A
6 6
15mA
)
mp
)
emp
mp)
10mA
Te
4 4
se T
e Te
se
0.5
(Ca
(Ca
10A
(Cas
5mA
˚C
25˚C
125
–30˚C
2 5A 2
3A
I C= 1 A
0 0 0
0 2 4 6 0.002 0.01 0.1 1 2 0 0.5 1.0 1.2

θ j- a ( ˚ C/W)
(V C E =4V) (V C E =4V)
1000 1000 4
1 2 5 ˚C
Typ
500 500
25˚C
˚C
–30 1
0.5
100 100 0.3

0.02 0.1 0.5 1 5 10 0.02 0.1 0.5 1 5 10 1 10 100 1000

(V C E =12V)
30 30 40
1m Natural Cooling
s Silicone Grease
Typ Heatsink: Aluminum
10
m in mm
10 10 s
Cut- off Fr equ ency f T (MH Z )
30
0m
20 s
5
DC
W
ith
In
20
fin
ite
he
at
150x150x2
si
10 1
nk
100x100x2
10
Without Heatsink
0.5 Natural Cooling 50x50x2
Without Heatsink
2
0 0.2 0
–0.05 –0.1 –0.5 –1 –5 –10 3 5 10 50 100 0 25 50 75 100 125 150
85
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1567) Application : DC Motor Driver and General Purpose
10.1±0.2
4.0±0.2
2.8 c0.5
8.4±0.2
16.9±0.3
ø3.3±0.2
IC 12 A hFE VCE=1V, IC=6A 50min a
0.8±0.2
b
±0.2
3.9
13.0min
Tstg 1.35±0.15
–55 to +150 °C
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
B C E

(V CE =1V)
12 1.3 12
100m A
A
m
20
10 10

60mA 1.0
8 8
40mA
6 6
p)
mp)
)
Tem
Temp
20mA
e Te
0.5
se
4 4
(Case
(Cas
(Ca
10mA 12A
˚C
25˚C
–30˚C
125
9A
2 I B =5mA 6A 2
3A
I C= 1 A
0 0 0
0 0.8 1.6 2.4 3.2 4 4.8 5.6 6 0.002 0.01 0.1 1 3 0 0.5 1.0 1.1

θ j - a ( ˚C/W)
(V C E =1V) (V C E =1V)
1000 1000 5
125˚C
500 500
Typ 25˚C
–3 0˚C
100 100 1
50 50
0.5
20 20 0.3
0.02 0.1 1 10 12 0.02 0.1 1 10 12 1 10 100 1000

(V C E =12V)
30 30 40
Natural Cooling
1m Silicone Grease
s
Heatsink: Aluminum
Typ
10
10
10 in mm
m
0m
s
30
5 DC s
20
W
ith
In
20
fin
1
ite
he
at
0.5 150x150x2
si
10
nk
100x100x2
10
Without Heatsink
0.1
Without Heatsink
2
0 0.05 0
–0.05 –0.1 –0.5 –1 –5 –10 –12 3 5 10 50 100 0 25 50 75 100 125 150
86
Equivalent C
circuit
Built-in Diode at C–E

Low VCE (sat) 2SC4065 B
( 400 Ω )
E
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1568) Application : DC Motor Driver and General Purpose
4.0±0.2
2.8 c0.5
VCEO 60 IEBO VEB=6V 60max mA
8.4±0.2
V
16.9±0.3
VEBO 6 V V(BR)CEO IC=25mA 60min V ø3.3±0.2
a
IC ±12 A hFE VCE=1V, IC=6A 50min
0.8±0.2
b
±0.2
3.9
PC 35(Tc=25°C) W VFEC VECO=10A 2.5max V
13.0min
1.35±0.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 180typ PF
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
B C E

(V CE =1V)
12 1.3 12
A
A
m
50
0m
1 100m A
20
10 10

1.0
60mA
8 8
40mA
6 6
p)
mp)
p)
Tem
e Tem
e Te
0.5
20mA
se
4 4
(Cas
(Ca
(Cas
12A
˚C
25˚C
–30˚C
125
I B =10mA 9A
2 6A 2
3A
I C =1 A
0 0 0
0 2 4 6 0.005 0.01 0.1 1 3 0 0.5 1.0 1.1

θ j - a (˚ C/W)
(V C E =1V) (V C E =1V)
400 400 5
Typ ˚C
5
12
100 100 ˚C
25
C
0˚
50 50 –3
1
0.5
10 10
5 5
3 3 0.2
0.02 0.1 1 10 12 0.02 0.1 1 10 12 1 10 100 1000

(V C E =12V)
30 30 40
Natural Cooling
1m
s Silicone Grease
Heatsink: Aluminum
Typ
10
10
10 in mm
m
0m
s
30
5 DC s
20
W
ith
20
In
fin
1
ite
he
0.5 150x150x2
at
10
si
nk
100x100x2
10
Without Heatsink
0.1
Without Heatsink
2
0 0.05 0
–0.05 –0.1 –0.5 –1 –5 –10 –12 3 5 10 50 100 0 25 50 75 100 125 150
87
2SC4073
10.1±0.2
4.0±0.2
2.8 c0.5
8.4±0.2
16.9±0.3
ø3.3±0.2
IC 5(Pulse10) hFE VCE=4V, IC=2A 10 to 30 a
A
0.8±0.2
b
±0.2
3.9
13.0min
Tstg COB VCB=10V, f=1MHz 1.35±0.15

–55 to +150 °C 30typ pF
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
B C E
(I C /I B =5) (V C E =4V)
5 5
60 0m A
A
m
2
00
=8
400 mA
IB
4 4

300m A
3 3
200mA
V B E (sat)
1
mp)
–55˚C (Case Temp)
)
p)
emp
2 100mA 2
Tem
)
e Te
emp
p)
25˚C (Case Tem
se T
se
e Temp)
(Cas
eT
125˚C (Cas
˚C
(Ca
(Ca
50mA
as
25
˚C
–55˚C
1
(C
25˚C
C
125
5˚
12 ˚ C
V C E (sat) – 55
0 0 0
0 1 2 3 4 0.01 0.05 0.1 0.5 1 5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

θ j- a ( ˚ C/W)
(V C E =4V)
50 5 5
125˚C
t on• t s tg • t f (µ s)
25˚C t s tg
V C C 200V
I C :I B 1 :–I B 2 =10:1:2
–55˚C
1
Switching Ti me
0.5 1
10 t on
tf 0.5
5 0.1 0.3
0.01 0.05 0.1 0.5 1 5 0.1 0.5 1 5 1 10 100 1000
20 20 30
10 10 10
0µ
5 1m s
s 5
10
W
m
ith
s
20
In
fin
1
D
ite
C
1
he
0.5
at
0.5
si
nk
10
Without Heatsink 0.1 Natural Cooling
0.05
0.05 IB2=–0.5A
Duty:less than1% Without Heatsink
2
0.01 0.01 0
2 5 10 50 100 500 5 10 50 100 500 0 25 50 75 100 125 150
88
2SC4130
Silicon NPN Epitaxial Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose
10.1±0.2
4.0±0.2
2.8 c0.5
8.4±0.2
16.9±0.3
ø3.3±0.2
IC 7(Pulse14) hFE VCE=4V, IC=3A 10 to 30 a
A
0.8±0.2
b
PC 30(Tc=25°C) VBE(sat) IC=3A, IB=0.6A 1.3max V
±0.2
3.9
W
13.0min
50typ 1.35±0.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz pF
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
B C E
(I C /I B =5) (V C E =4V)
7 7
10 00 m A
A
0m

40
6 6
60 0m A 2
=1
IB

400mA
4 4
200 mA
mp)
V B E (sat)
)
mp
p)
1
Tem
e Te
Te
100m A
se
p)
25˚C (Case Tem
ase
(Cas
(Ca
2 2
C (C
e Temp)
125˚C (Cas
5˚C
p)
–55˚C
˚C
50mA
em
25˚
25
12
T
e
as C
125˚C
(C 5˚
V C E (sat) –5
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 7 0 0.2 0.4 0.6 0.8 1.0 1.2

θ j- a ( ˚C/W)
(V C E =4V)
50 5 4
125˚C
25˚C
–55˚C V C C 200V t s tg
I C :I B 1 :–I B2 =10:1:2
1
Swit ching Time
10 1
0.5
5
t on
0.5
tf
2 0.1 0.3
0.02 0.05 0.1 0.5 1 5 7 0.2 0.5 1 5 7 1 10 100 1000
20 20 30
10 10 10
0µ
1m s
5 10 s 5
m
s
W
DC
ith
20
In
fin
1 1
ite
he
0.5 0.5
at
si
nk
Without Heatsink 10
0.05 0.05
Duty:less than 1%
Without Heatsink
2
0.01 0.01 0
2 5 10 50 100 500 2 5 10 50 100 500 0 25 50 75 100 125 150
89
Silicon NPN Epitaxial Planar Transistor Application : DC-DC Converter, Emergency Lighting Inverter and General Purpose
0.8±0.2
15.6±0.2 5.5±0.2
VCBO 100 V ICBO VCB=100V 10max µA 3.45 ±0.2
µA
5.5
9.5±0.2
VCEO 50 V IEBO VEB=15V 10max
23.0±0.3
ø3.3±0.2
1.6
IB 4 VCE(sat) IC=5A, IB=80mA 0.5max V b
A
3.0
PC 60(Tc=25°C) W VBE(sat) IC=5A, IB=80mA 1.2max V
3.3
Tj 150 °C fT VCE=12V, IE=–1A 18typ MHz 1.75 0.8
16.2
2.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 210typ pF
1.05 +0.2
-0.1
5.45±0.1 5.45±0.1 0.65 +0.2 3.35

-0.1
1.5 4.4 1.5

20 4 5 10 –5 0.08 –0.08 0.5typ 2.0typ 0.4typ B C E b. Lot No.

(V C E =1V)
15 1.3 15
85mA
80mA
12

1.0
40mA 10
8
25mA
mp)
)
)
0.5
mp
emp
15mA
15A 5
e Te
Te
se T
se
4
(Cas
10A
(Ca
(Ca
I B =7mA
˚C
–30˚C
25˚C
5A
125
3A
I C =1 A
0 0 0
0 2 4 6 0.002 0.01 0.1 1 2 0 0.5 1.0 1.5

θ j - a ( ˚C/W)
(V C E =1V) (V C E =1V)
1000 1000 3
12 5˚ C
500 Typ 500

2 5 ˚C
– 3 0 ˚C 1
0.5
100 100
70 70 0.3
0.02 0.1 1 10 15 0.02 0.1 1 10 15 1 10 100 1000
t on •t stg •t f – I C Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

5 40 60
V C C 20V
t stg
I C =5A
I B1 =–I B 2 1m
=80mA s
t o n• t s t g • t f (µ s)
10
10
m
0m
10
s
s 40
DC
W
1
ith
5
In
tf
Switching Time
fin
ite
0.5
he
at
si
20
nk
1
t on Without Heatsink
Natural Cooling Without Heatsink
0.1 3.5
0.08 0.4 0
0.1 0.5 1 5 10 3 5 10 50 100 0 50 100 150
Collector C urrent I C (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
90
2SC4138
15.6±0.4 4.8±0.2
5.0±0.2
µA
2.0
500
1.8
VCBO V ICBO VCB=500V 100max 9.6 2.0±0.1

19.9±0.3
4.0
a ø3.2±0.1
b
4.0max
20.0min

-0.1 0.65 +0.2
-0.1

B C E
5.45±0.1 1.4
(I C /I B =5) (V C E =4V)
10 1.4 10
A 1A
1.2
8 600 mA 8

400mA
6 6
V B E (sat)
)
mp
)
emp
mp)
Te
4 200m A 4
se T
e Te
se
(Ca
(Ca
(Cas
˚C
I B =100m A
25˚C
125
–55˚C
2 2
V C E (sat)
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 10 0 0.2 0.4 0.6 0.8 1.0 1.2

θ j- a ( ˚C/W)
(V C E =4V)
100 10 3
t o n• t s tg • t f (µ s)
5 t s tg
125˚C
50
25˚C V C C 200V
I C :I B1 :–I B 2 =10:1:2
–55˚C
1
Switching Ti me
0.5 t on
10 0.5
tf
5 0.1 0.3
0.02 0.05 0.1 0.5 1 5 10 0.1 0.5 1 5 10 1 10 100 1000
30 30 80
10
1m 0µ
s s
10 10
60
W
ith
5 5
In
fin
ite
he
40
at
si
nk
1 1
Without Heatsink
Natural Cooling
0.5 0.5
20
Duty:less than 1%
Without Heatsink
3.5
0.1 0.1
5 10 50 100 500 0
5 10 50 100 500 0 25 50 75 100 125 150
91
2SC4139
15.6±0.4
5.0±0.2
2.0
1.8
19.9±0.3
4.0
a ø3.2±0.1
b
4.0max
20.0min

-0.1 0.65 +0.2
-0.1
5.45±0.1 5.45±0.1 1.4

(I C /I B =5) (V CE =4V)
15 1.5 10
5A 1 .2 A
1.
800 mA 8

600mA V B E (sat)
10 1.0
e Temp) 6
–55˚C (Cas
400m A
Temp)
mp)
ase
25˚C (C
)
Temp
Temp)
e Te
)
Temp 4
(Case
p)
Cas
125˚C
(Case
200mA 0.5
em
(Case
5
˚C
˚C (
eT
25
25˚C
125
as
–55˚C
I B =100mA 2
C
(
C
5˚ ˚C
12 5
–5
V C E (sat)
0 0 0
0 1 2 3 4 0.03 0.05 0.1 0.5 1 5 10 20 0 0.2 0.4 0.6 0.8 1.0 1.2

θ j- a (˚ C/W)
(V C E =4V)
50 8 2
125˚C 5
t s tg
25˚C V C C 200V 1
I C :I B1 :I B2 =10:1:–2
–55˚C
1 0.5
Sw it ching Time
0.5
10 t on
tf
5 0.1 0.1
0.02 0.05 0.1 0.5 1 5 10 15 0.5 1 5 10 15 1 10 100 1000
50 50 120
10
100
0µ
s
W
ith
In
fin
10 10
ite
he
at
si
nk
5 5 Without Heatsink 50
Natural Cooling
Natural Cooling IB2=–1A
Duty:less than 1%
1 1 3.5 Without Heatsink

5 10 50 100 500 0
5 10 50 100 500 0 25 50 75 100 125 150
92
2SC4140
15.6±0.4 4.8±0.2
5.0±0.2
2.0
µA
1.8
19.9±0.3
4.0
a ø3.2±0.1
b
PC 130(Tc=25°C) W VBE(sat) IC=10A, IB=2A 1.3max V 2
4.0max
20.0min

-0.1 0.65 +0.2
-0.1
5.45±0.1 5.45±0.1 1.4

200 20 10 10 –5 1 –2 1max 3max 0.5max b. Lot No.
(I C /I B =5) (V CE =4V)
18 1.4 18
1 .6 A
16 1.2 A 16
V B E (sat)

800 mA 1
12 12
Temp)
600mA –55˚C (Case
e Temp)
25˚C (Cas
)
400m A
mp
mp)
mp)
8 8
Te
)
Temp
e Te
e Te
(Case
p)
se
125˚C
em
(Ca
(Cas
(Cas
eT
˚C
200mA
˚C
25
as
25˚C
125
4
–55˚C
4
(C
C
I B =100mA 5˚
12 ˚C
V C E (sat) –55
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 10 18 0 0.2 0.4 0.6 0.8 1.0 1.2

θ j - a (˚C /W)
(V C E =4V)
50 10 2
125˚C 5
t s tg
V C C 200V 1
25˚C I C :I B1 :–I B 2 =10:1:2
0.5
Switching Ti me
–55˚C 1
0.5 t on
10
tf
5 0.1 0.1
0.02 0.05 0.1 0.5 1 5 10 18 0.2 0.5 1 5 10 18 1 10 100 1000
50 50 130
10
10 1m 0µ
ms s s
DC
10 10
100
W
ith
5 5
In
fin
ite
he
at
1 1
si
nk
0.5 0.5 50
Without Heatsink
Without Heatsink Natural Cooling
IB2=–0.5A
0.05 0.05 Without Heatsink

3.5
0.03 0.03 0
5 10 50 100 500 5 10 50 100 500 0 25 50 75 100 125 150
93
2SC4153
Silicon NPN Triple Diffused Planar Transistor ( Switchihg Transistor) Application : Humidifier, DC-DC Converter, and General Purpose
4.0±0.2
2.8 c0.5
IEBO VEB=8V 100max µA
8.4±0.2
VCEO 120 V
16.9±0.3
a
0.8±0.2
b
±0.2
3.9
13.0min
Tj fT VCE=12V, IE=–0.5A 30typ 1.35±0.15
150 °C MHz
1.35±0.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
B C E
50 16.7 3 10 –5 0.3 –0.6 0.5max 3max 0.5max b. Lot No.

(V C E =4V)
7 3 7
mA
200
mA
5 150 6
mA
100

5 5
A
60m 2
4 40mA 4
p)
mp)
Tem
)
Temp
20m A
e Te
3 3
se
(Cas
(Ca
(Case
1
˚C
2 2
25˚C
125
I B =10mA
–30˚C
1 1
3A 5A
I C = 1A
0 0 0
0 1 2 3 4 0.005 0.01 0.1 1 2 0 0.5 1.0 1.1

θ j - a (˚C /W)
(V C E =4V) (V C E =4V)
300 300 5
12 5˚ C
Typ
25˚C
100 100
˚C
–30 1
50 50
0.5
20 20 0.2
0.01 0.1 0.5 1 5 7 0.01 0.1 0.5 1 5 7 1 10 100 1000

(V C E =12V)
40 20 30
10
0µ
s Natural Cooling
10
Typ Silicone Grease
Maxim um Power Dissipatio n P C (W)
Heatsink: Aluminum
30 5 in mm
10
ms
20
W
ith
In
fin
20 1 150x150x2
ite
he
100x100x2
at
0.5
si
10
nk
Without Heatsink
10

2
0 0.05 0
–0.01 –0.1 –1 –5 5 10 50 100 200 0 25 50 75 100 125 150
94
2SC4296
0.8±0.2
15.6±0.2 5.5±0.2
µA
5.5
9.5±0.2
23.0±0.3
V
ø3.3±0.2
1.6
IB 4 VCE(sat) IC=6A, IB=1.2A 0.5max b
A V
3.0
3.3
Tj 150 °C fT VCE=12V, IE=–0.7A 10typ MHz 1.75 0.8
16.2
2.15
1.05 +0.2
-0.1
5.45±0.1 5.45±0.1 0.65 +0.2

-0.1 3.35
1.5 4.4 1.5
200 33 6 10 –5 0.6 –1.2 1max 3max 0.5max B C E b. Lot No.
(I C /I B =5) (V C E =4V)
10 1.4 10
A 1A
1.2
8 600 mA 8

400mA
6 6
V B E (sat)
)
mp
)
emp
mp)
Te
4 200m A 4
se T
e Te
se
(Ca
(Ca
(Cas
˚C
I B = 100mA
25˚C
125
–55˚C
2 2
V C E (sat)
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 10 0 0.2 0.4 0.6 0.8 1.0 1.2

θ j - a (˚C/W)
(V C E =4V)
100 10 3
5 t s tg
125˚C
50
25˚C V C C 200V
I C :I B 1 :–I B2 =10:1:2
–55˚C
1
Sw it ching Time
0.5 t on
10 0.5
tf
5 0.1 0.3
0.02 0.05 0.1 0.5 1 5 10 0.1 0.5 1 5 10 1 10 100 1000
30 30 80
50
µs
1m 10
10 s 0µ
s 10
10
m
s
5 5 60
W
Collect or Cur re nt I C (A)
ith
In
fin
ite
1 1
he
40
at
si
0.5 0.5
nk
Without Heatsink
Natural Cooling
Without Heatsink L=3mH 20
0.1 Natural Cooling 0.1 –IB2=1A
Duty:less than 1%
0.05 0.05
Without Heatsink
3.5
0.02 0.02
5 10 50 100 500 0
5 10 50 100 500 0 50 100 150
95
2SC4297
0.8±0.2
15.6±0.2 5.5±0.2
µA
5.5
VCEO 400 V 100max
9.5±0.2
IEBO VEB=10V
23.0±0.3
ø3.3±0.2
1.6
3.0
3.3
16.2
2.15
1.05 +0.2
-0.1
5.45±0.1 5.45±0.1 0.65 +0.2 3.35

-0.1
1.5 4.4 1.5

200 28.5 7 10 –5 0.7 –1.4 1max 3max 0.5max B C E b. Lot No.
(I C /I B =5) (V C E =4V)
12 12
1A
80 0m A
10 10
V B E (sat)

60 0m A
1
8 8
Temp)
–55˚C (Case
400m A
e Temp)
6 25˚C (Cas 6
p)
mp)
Tem
mp)
)
Te
Temp
(Case
e Te
)
2 5 Temp
se
200mA 125˚C
(Ca
4 4
(Cas
(Case
˚C
e
˚C
as
25˚C
125
I B =100mA
(C
–55˚C
2 5˚ 2
12 C
5˚
V C E (sat) –5
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 10 0 0.2 0.4 0.6 0.8 1.0 1.2

θ j - a (˚ C/W)
(V C E =4V)
50 8 2
125˚C 5
t s tg
1
25˚C V C C 200V
I C :I B 1 :–I B2 =10:1:2
–30˚C 0.5
1
Swi tchi ng T im e
0.5
10 t on
tf
5 0.1 0.1
0.02 0.05 0.1 0.5 1 5 10 12 0.5 1 5 10 1 10 100 1000
30 30 80
10
0µ
s
10 10
60
W
ith
5 5
In
fin
ite
he
40
at
si
nk
1 1
Without Heatsink
Natural Cooling
0.5 Without Heatsink 0.5 L=3mH 20
Duty:less than 1%
Without Heatsink
3.5
0.1 0.1 0
5 10 50 100 500 5 10 50 100 500 0 50 100 150
96
2SC4298
0.8±0.2
15.6±0.2 5.5±0.2
µA
5.5
100max
9.5±0.2
VCEO 400 V IEBO VEB=10V
23.0±0.3
ø3.3±0.2
1.6
IB 5 VCE(sat) IC=8A, IB=1.6A 0.5max V b
A
3.0
3.3
16.2
2.15
1.05 +0.2
-0.1
5.45±0.1 5.45±0.1 0.65 +0.2 3.35

-0.1
1.5 4.4 1.5

(I C /I B =5) (V CE =4V)
15 1.5 10
5A 1. 2A
1.
800 mA 8

600m A V B E (sat)
10 1.0
e Temp) 6
–55˚C (Cas
400mA
Temp)
mp)
ase
25˚C (C
)
Temp
Temp)
e Te
)
Temp 4
(Case
p)
Cas
125˚C
(Case
200mA 0.5
em
(Case
5
˚C
˚C (
eT
25
25˚C
125
as
–55˚C
I B =100mA 2
C
(
C
5˚ ˚C
12 5
–5
V C E (sat)
0 0 0
0 1 2 3 4 0.03 0.05 0.1 0.5 1 5 10 20 0 0.2 0.4 0.6 0.8 1.0 1.2

θ j- a ( ˚C/W)
(V C E =4V)
50 8 2
125˚C 5
t s tg
25˚C V C C 200V 1
I C :I B1 :I B2 = 10:1:–2
–55˚C
1 0.5
Sw it ching Time
0.5
10 t on
tf
5 0.1 0.1
0.02 0.05 0.1 0.5 1 5 10 15 0.5 1 5 10 15 1 10 100 1000
50 50 80
10

0µ
s
60
W
ith
In
fin
10 10
ite
he
40
at
si
nk
5 5 Without Heatsink
Natural Cooling
Without Heatsink
3.5
1 1 0
5 10 50 100 500 5 10 50 100 500 0 25 50 75 100 125 150
97
2SC4299
0.8±0.2
15.6±0.2 5.5±0.2
µA
5.5
VCEO 800 IEBO VEB=7V 100max
9.5±0.2
V
23.0±0.3
ø3.3±0.2
1.6
IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max V b
3.0
3.3
16.2
2.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 50typ pF +0.2
1.05 -0.1
5.45±0.1 5.45±0.1 0.65 +0.2 3.35

-0.1
1.5 4.4 1.5

250 250 1 10 –5 0.15 –0.5 1max 5max 1max B C E b. Lot No.
500mA 400mA (I C /I B =5) (V CE =4V)
3 3
300mA
1 V B E (sat)

p)
–55˚C (Case Tem
200mA
2 2
e Temp)
25˚C (Cas
mp)
mp)
100mA Temp)
p)
e Te
(Case
ase Tem
ase Te
125˚C
(Cas
e m p)
25˚C (C
1 I B =50mA 1
125˚C
–55˚C (C
eT
2 5 Cas
(
˚C
˚C
–55
V C E (sat) 5˚C
12
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 3 0 0.2 0.4 0.6 0.8 1.0 1.2
h FE – I C Characteristics (Typical) t on •t st g • t f – I C Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚C/W)
(V C E =4V)
50 8 3
125˚C
5
t s tg
25˚C VCC 250V

IC:IB1:–IB2
=2:0.3:1 Const.
1
Sw it ching Time
–55˚C
1
tf
10
0.5 0.5
t on
5 0.2 0.3
0.01 0.05 0.1 0.5 1 3 0.1 0.5 1 3 1 10 100 1000
10 10 70
5 5 60
10
0µ
s
W
50
ith
In
fin
ite
40
he
1 1
at
si
nk
30
Without Heatsink
Without Heatsink L=3mH 20
Duty:less than 1%
10
Without Heatsink
0.1 3.5
0.1 0
50 100 500 1000 50 100 500 1000 0 25 50 75 100 125 150
98
2SC4300
0.8±0.2
15.6±0.2 5.5±0.2
µA
5.5
VCEO 800 IEBO VEB=7V 100max
9.5±0.2
V
23.0±0.3
ø3.3±0.2
1.6
IB 2.5 A VCE(sat) IC=2A, IB=0.4A 0.5max V b
3.0
3.3
16.2
2.15
1.05 +0.2
-0.1
5.45±0.1 5.45±0.1 0.65 +0.2 3.35

-0.1
1.5 4.4 1.5

(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs)
a. Part No.
250 125 2 10 –5 0.3 –1 1max 5max 1max B C E b. Lot No.
700mA (I C /I B =5) (V CE =4V)
5 5
60 0m A
500m A
4 400 mA 4

2
300mA
3 3
mp)
200mA
)
Temp
p)
e Te
ase Tem
V B E (sat)
(Cas
(Case
2 1 2
I B =100mA –55˚C (Case Temp)
125˚C
–55˚C (C
25˚C (Case Temp)
25˚C
e Temp)
125˚C (Cas
m p)
C
1 1
– 5 5 ˚C
25˚
Te
e
C as
V C E (sat) 125˚C (
0 0 0
0 1 2 3 4 0.03 0.05 0.1 0.5 1 5 10 0 0.2 0.4 0.6 0.8 1.0 1.2

θ j- a ( ˚C/W)
(V C E =4V)
50 10 2
t on • t st g• t f (µ s)
5 t s tg
125˚C
VCC 250V
1
25˚C IC:IB1:–IB2
=2:0.3:1 Const.
0.5
Switching T im e
–55˚C
1 tf
10
0.5
t on
5 0.2 0.1
0.02 0.05 0.1 0.5 1 5 0.1 0.5 1 5 1 10 100 1000
20 20 80
10 10
10
10
5 0µ 5
µs
1m s
s 60
W
ith
In
1
fin
1
ite
he
0.5 40
0.5
at
si
nk
Without Heatsink
Natural Cooling L=3mH 20
0.05
0.05 IB2=–1.0A
Duty:less than 1%
Without Heatsink
3.5
0.01 0.01 0
10 50 100 500 1000 50 100 500 1000 0 50 100 150
99
2SC4301
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose
0.8±0.2
15.6±0.2 5.5±0.2
µA
5.5
9.5±0.2
VEBO V(BR)CEO IC=10mA 800min
23.0±0.3
7 V V
ø3.3±0.2
1.6
IB VCE(sat) IC=3A, IB=0.6A 0.5max b
3.5 A V
3.0
PC 80(Tc=25°C) VBE(sat) IC=3A, IB=0.6A 1.2max V
3.3
W
16.2
2.15
1.05 +0.2
-0.1
5.45±0.1 5.45±0.1 0.65 +0.2

-0.1 3.35
250 83 3 –5 –1.5 1max 5max B C E b. Lot No.
10 0.45 1max
1A (I C /I B =5) (V CE =4V)
7
700m A
6 V B E (sat) 6
1
500mA

)
(Case Temp
–55˚C
p)
300 mA ase Tem
4 25˚C (C 4
mp)
)
Temp
p)
)
e Te
emp
200mA ase T
ase Tem
(C
125˚C
(Cas
(Case
)
emp
I B =100mA
125˚C
–55˚C (C
eT
25˚C
2 2
as
(C
˚C
˚C
25
5
12
V C E (sat) 5˚C
–5
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 7 0 0.2 0.4 0.6 0.8 1.0 1.2
h FE – I C Characteristics (Typical) t on • t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚C /W )
(V C E =4V)
50 10 2
12
t on • t s t g• t f ( µ s)
5˚
25˚C C 5 t s tg
VCC 250V 1
I C :I B1 :I B2 =2:0.3:–1 Const.
–55˚C
0.5
Sw it ching Time
1 tf
10
0.5
t on
5 0.2 0.1
0.02 0.05 0.1 0.5 1 5 7 0.1 0.5 1 5 7 1 10 100 1000
20 20 80
10 10
10
0µ
s
5 60
W
5
ith
In
fin
ite
he
40
at
si
1 1
nk
Without Heatsink
Natural Cooling
0.5 Without Heatsink 0.5
L=3mH
Duty :less than1%
Without Heatsink
3.5
0.1 0.1 0
50 100 500 1000 50 100 500 1000 0 25 50 75 100 125 150
100
2SC4304
Silicon NPN Triple Diffused Planar Transistor (High Voltage High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose
10.1±0.2
4.0±0.2
2.8 c0.5
8.4±0.2
16.9±0.3
ø3.3±0.2
IC hFE 10 to 30 a
3(Pulse6) A VCE=4V, IC=0.7A
0.8±0.2
b
PC 35(Tc=25°C) VBE(sat) IC=0.7A, IB=0.14A 1.2max V
±0.2
3.9
W
13.0min
1.35±0.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
B C E
250 357 0.7 10 –5 0.1 –0.35 0.7max 4.0max 0.7max b. Lot No.
(I C /I B =5) (V C E =4V)
3 3
700mA
500 mA
V C E (sat)
2

300m A
25˚C (Case Temp)

2 125˚C (Case Temp) 2
200m A
mp)
mp)
p)
e Tem
e Te
e Te
100mA 1 V B E (sat)
p)
–55˚C (Case Tem
(Cas
Cas
(Cas
1 p) 1
25˚C (Case Tem
˚C (
I B =50mA
25˚C
–55˚C
Temp)
125
125˚C (Case
0 0 0
0 1 2 3 4 0.01 0.05 0.1 0.5 1 3 0 0.2 0.4 0.6 0.8 1.0 1.2

θ j - a ( ˚ C/W)
(V C E =4V)
50 7 4
125˚C
5
25˚C
t s tg
V C C 250V
I C :I B1 :–I B 2 =10:1.5:5
–55˚C
1
Sw it ching Time
10 1
tf
0.5
5
t on 0.5
2 0.1 0.3
0.01 0.05 0.1 0.5 1 3 0.1 0.5 1 2 1 10 100 1000
10 10 35
5 5
50
30
µs
10
0µ
W
ith
1
s
1
1m
DC
In
s
fin
( Tc
0.5 0.5
ite
10
=2
20
ms
he
5
at
C
)
si
nk
0.1 0.1

0.05 10
Natural Cooling
Without Heatsink
L=3mH
Natural Cooling
IB2=–1.0A
Duty:less than 1%
2
0.005 0.005 0
2 5 10 50 100 500 1000 50 100 500 1000 0 25 50 75 100 125 150
101
2SC4381/4382
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1667/1668) Application : TV Vertical Output, Audio Output Driver and General Purpose
Ratings Ratings
2SC4381 2SC4382 2SC4381 2SC4382 10.1±0.2 4.2±0.2
4.0±0.2
2.8 c0.5
ICBO
VCEO 150 200 V VCB= 150 200
8.4±0.2
V
16.9±0.3
a
IC 2 A V(BR)CEO IC=25mA 150min 200min V
0.8±0.2
b
IB 1 A hFE VCE=10V, IC=0.7A 60min
±0.2
3.9
PC 25(Tc=25°C) W VCE(sat) IC=0.7A, IB=0.07A 1.0max V
13.0min
1.35±0.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
B C E

(V C E =10V)
2 3 2
A
m
50
1.6

2
1.2
)
Temp
e Temp)
e Temp)
I B =5mA/Step
0.8
(Case
1
25˚C (Cas
–55˚C (Cas
125˚C
0.4
I C = 0 .5 2A
A 1A
0 0 0
0 2 4 6 8 10 2 10 100 1000 0 0.5 1.0

θ j - a (˚ C/W)
(V C E =10V) (V C E =10V)
400 400 6
125 ˚C
Typ
2 5 ˚C
100 100 – 3 0 ˚C
1
50 50
30 30 0.5
0.01 0.1 1 2 0.01 0.1 1 2 1 10 100 1000

(V C E =12V)
30 5 30
1m
5m
20
D
s
ms
C
1
20 20
ith
Typ
In
fin
ite
he
at
si
nk
0.1
10 10
Without Heatsink
Natural Cooling
1.2SC4381
2.2SC4382
Without Heatsink
1 2
0 0.01 0
–0.01 –0.1 –0.5 –1 –2 1 10 100 300 0 50 100 150
102
2SC4388
0.8±0.2
15.6±0.2 5.5±0.2
µA
5.5
VCEO IEBO VEB=6V 10max
9.5±0.2
180 V
23.0±0.3
ø3.3±0.2
1.6
3.0
3.3
Tj 150 °C COB VCB=10V, f=1MHz 300typ pF 1.75 0.8
16.2
2.15
-0.1
5.45±0.1 5.45±0.1 0.65 +0.2

-0.1 3.35
1.5 4.4 1.5
40 4 10 10 –5 1 –1 0.5max 1.8max 0.6max B C E b. Lot No.

(V C E =4V)
15 3 15
A mA
1A
m 0
00 50
7 A
300m
20 0m A

10 2 10
100 mA
mp)
Temp)
mp)
e Te
e Te
5 50mA 1 5
Cas
(Case
(Cas
˚C (
25˚C
–30˚C
125
I B =20mA I C =10A
5A
0 0 0
0 1 2 3 4 0 0.5 1.0 1.5 2.0 0 1 2

θ j - a (˚C /W)
(V C E =4V) (V C E =4V)
300 200 3
125˚C
100 1
100 Typ 25˚C
0.5
50 –30˚C
50
20 20 0.1
0.02 0.1 0.5 1 5 10 15 0.02 0.1 0.5 1 5 10 15 1 10 100 1000 2000

(V C E =12V)
30 40 100
10
m
10 s
Typ 0m
s
10 80
DC
5
20
ith
In
60
fin
ite
he
at
1
si
nk
40
10 0.5
Without Heatsink
Natural Cooling 20
0.1
Without Heatsink
3.5
0 0.05 0
–0.02 –0.1 –1 –10 3 5 10 50 100 200 0 25 50 75 100 125 150
103
2SC4418
4.0±0.2
2.8 c0.5
8.4±0.2
16.9±0.3
ø3.3±0.2
a
IC 5(Pulse10) A hFE VCE=4V, IC=1.5A 10 to 30
0.8±0.2
b
IB 2 A VCE(sat) IC=1.5A, IB=0.3A 0.5max V
PC VBE(sat) IC=1.5A, IB=0.3A 1.3max
±0.2
3.9
30(Tc=25°C) W V
13.0min
1.35±0.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
B C E
200 133 1.5 10 –5 0.15 –0.3 1max 2.5max 0.5max b. Lot No.
(I C /I B =5) (V CE =4V)
5 5
A 1.4 A
1.8
V C E (sat)
1A
2 –55˚C (Case Temp)
4 4
25˚C (Case Temp)

60 0m A
125˚C (Case Temp)
400 mA
3 3
200 mA
V B E (sat)
Tem p)
1 2
em
2
e Te )
mp)
p
100 mA
eT
Temp)
25˚C (Case
as
se
(C
p)
ase Tem
Cas
I B =50mA
Ca
12 5˚ C (C
5˚C
1 1
C(
˚C (
12
25˚
–55
0 0 0
0 1 2 3 4 0.01 0.05 0.1 0.5 1 5 0 1.0 1.6

θ j - a (˚C /W)
(V C E =4V)
100 8 5
5
50 Typ
V C C 200V t s tg
I C :I B 1 :I B2 =10:1:–2
1
Sw it ching Time
10
0.5 1
5 tf
t on 0.5
2 0.1 0.4
0.01 0.05 0.1 0.5 1 5 0.1 0.5 1 3 1 10 100 1000
20 20 30
10 50 10
10 µs
0µ
1m s
5 s 5
10
DC m
W
s
ith
20
In
fin
1 1
ite
he
0.5 0.5
at
si
nk
Without Heatsink 10
0.05 0.05 IB2=–0.5A
Natural Cooling
Duty:less than 1%
Without Heatsink
2
0.01 0.01 0
2 5 10 50 100 500 5 10 50 100 500 0 25 50 75 100 125 150
104
2SC4434
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator, Lighting Inverter, and General Purpose
15.6±0.4 4.8±0.2
5.0±0.2
2.0
1.8
19.9±0.3
4.0
a ø3.2±0.1
b
4.0max
20.0min

-0.1 0.65 +0.2
-0.1
5.45±0.1 5.45±0.1 1.4

200 25 8 10 –5 1.6 –3.2 0.5max 2.0max 0.15max b. Lot No.
(I C /I B =5) (V C E =4V)
10 15
A 1A
1.2 14
8 600 mA 12

10
400mA 1
6 V B E (sat)
8
7 5 ˚C
e Temp)
25˚C (Cas
)
emp
e Temp)
p)
p)
200m A as 6
p)
4 75˚C (C
Tem
Tem
em
eT
Temp)
eT
ase
as
se
50˚C (C
ase
1
(C
as
Ca
I B =100m A 4
˚C
C (C
(C
C
0˚
C(
25
2 15
0˚C
75˚
25˚
15
2
V C E (sat)
0 0 0
0 1 2 3 4 0.05 0.1 0.5 1 5 10 0 0.5 1.0
h FE – I C Temperature Characteristics (Typical) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚ C/W)
(V C E =4V)
50 5 2
150˚C
t o n • t s tg • t f ( µ s)
75˚C
t s tg 1
25˚C
1 V C C 200V
I C :I B 1 :–I B2 =5:1:2
0.5
Switching Ti me
0.5
t on
10
0.1 tf
5 0.05 0.1
0.05 0.1 0.5 1 5 10 15 0.5 1 5 10 15 1 10 100 1000
40 40 120
10
0µ
s
100
10 10
W
ith
5
In
5
fin
ite
he
at
si
nk
1 50
1
Without Heatsink
Natural Cooling
0.5 Without Heatsink 0.5 L=3mH
Duty:less than 1%
Without Heatsink
0.1 3.5
0.1 0
5 10 50 100 500 5 10 50 100 500 0 25 50 75 100 125 150
105
2SC4445
0.8±0.2
15.6±0.2 5.5±0.2
µA
5.5
800 IEBO
9.5±0.2
VCEO V VEB=7V 100max
23.0±0.3
ø3.3±0.2
IC 3(Pulse6) A hFE VCE=4V, IC=0.7A 10 to 30 a
1.6
IB 1.5 VCE(sat) IC=0.7A, IB=0.14A 0.5max V b
A
3.0
PC 60(Tc=25°C) W VBE(sat) IC=0.7A, IB=0.14A 1.2max V
3.3
16.2
2.15
1.05 +0.2
-0.1
5.45±0.1 5.45±0.1 0.65 +0.2

-0.1 3.35
1.5 4.4 1.5
250 357 0.7 10 –5 0.1 –0.35 0.7max 4max 0.7max B C E b. Lot No.
(I C /I B =5) (V C E =4V)
3 3
I B =700mA
500 mA
V C E (sat)
2

300m A
25˚C (Case Temp)

2 125˚C (Case Temp) 2
200m A
mp)
mp)
p)
e Tem
e Te
e Te
100mA 1 V B E (sat)
p)
–55˚C (Case Tem
(Cas
Cas
(Cas
1 p) 1
25˚C (Case Tem
˚C (
50mA
25˚C
–55˚C
Temp)
125
125˚C (Case
0 0 0
0 1 2 3 4 0.01 0.05 0.1 0.5 1 3 0 0.2 0.4 0.6 0.8 1.0 1.2

θ j - a ( ˚ C/W)
(V C E =4V)
50 7 4
125˚C
5
25˚C
V C C 250V t s tg
I C :I B1 :–I B 2 =10:1.5:5
–55˚C
1
Sw it ching Time
10 1
tf
0.5
5
t on 0.5
2 0.1 0.3
0.01 0.05 0.1 0.5 1 3 0.1 0.5 1 2 1 10 100 1000
10 10 60
5 5
50
W
10
µs
ith

0µ
40
In
s
fin
ite
1 1
he
at
si
nk
0.5 0.5
20
Without Heatsink
Natural Cooling
Without Heatsink
L=3mH
Natural Cooling
IB2=–1.0A
Without Heatsink
3.5
0.05 0.05 0
5 10 50 100 500 1000 5 10 50 100 500 1000 0 50 100 150
106
2SC4466
15.6±0.4 4.8±0.2
5.0±0.2
µA
2.0
1.8

19.9±0.3
V
4.0
a
b
4.0max
20.0min
Tstg –55 to +150 °C ∗hFE Rank O(50 to100), P(70 to140), Y(90 to180) 1.05 +0.2
-0.1 0.65 +0.2
-0.1

B C E

(V C E =4V)
6 3 6
A A A A
0m m 80m
0m 1 00
20 15

50 mA
4 2 4
30mA
mp)
)
p)
Temp
e Te
e Tem
2 20mA 1 2
Cas
(Case
(Cas
˚C (
I B =10mA
–30˚C
25˚C
125
I C =6A
4A
2A
0 0 0
0 1 2 3 4 0 0.5 1.0 1.5 0 1 2

θ j - a (˚ C/W)
(V C E =4V) (V C E =4V)
300 200 5
125˚C
100 25˚C
Typ
100
–30˚C
1
50
50
0.5
30 20 0.3
0.02 0.1 0.5 1 56 0.02 0.1 0.5 1 56 1 10 100 1000 2000

(V C E =12V)
40 20 60
10 1m
10 s
10 ms
30 5 0m
W
s
Collector Curr ent I C ( A)
ith
DC 40
In
Typ
fin
ite
he
20
at
si
1
nk
20
0.5
10 Without Heatsink
Natural Cooling
Without Heatsink
3.5
0 0.1
–0.02 –0.1 –1 –6 5 10 50 100 0
0 25 50 75 100 125 150
107
2SC4467
15.6±0.4 4.8±0.2
5.0±0.2
µA
2.0
1.8

VEBO V(BR)CEO IC=50mA 120min V
19.9±0.3
6 V
4.0
a
b
4.0max
20.0min
-0.1 0.65 +0.2
-0.1
5.45±0.1 5.45±0.1 1.4


(V C E =4V)
8 3 8
A
A
m m A
0m
350m
1 50 100
20
75 m A
6 6

2
50m A
4 4
mp)
)
mp)
Temp
e Te
20mA
e Te
1
Cas
(Case
(Cas
2 2
˚C (
–30˚C
25˚C
125
I B =10mA
I C =8A
4A
2A
0 0 0
0 1 2 3 4 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.5 1.0 1.5

θ j- a ( ˚ C/W)
(V C E =4V) (V C E =4V)
200 200 3
125˚C
Typ
100 100 25˚C
–30˚C 1
50 50
0.5
20 20 0.3
0.02 0.1 0.5 1 5 8 0.02 0.1 0.5 1 5 8 1 10 100 1000

(V C E =12V)
40 20 80
10
m
s
10 100ms
30
60
W
5
ith
Typ DC
In
fin
ite
he
20 40
at
si
1
nk
0.5
10 20
Without Heatsink
Natural Cooling
Without Heatsink
3.5
0 0.1 0
–0.02 –0.1 –1 –8 5 10 50 100 200 0 25 50 75 100 125 150
108
2SC4468
15.6±0.4 4.8±0.2
5.0±0.2
µA
2.0
10max
1.8
VCBO 200 V ICBO VCB=200V 9.6 2.0±0.1

19.9±0.3
4.0
IC 10 A hFE VCE=4V, IC=3A 50min∗ a ø3.2±0.1
b
4.0max
20.0min
-0.1 0.65 +0.2
-0.1

B C E

(V C E =4V)
10 3 10
A mA
A
A
00
m 150
0m
0m 2
30
40
8 A 8
100m

75 m A 2
6 6
50 mA
mp)
4
Temp)
)
4
Temp
e Te
1
20mA
Cas
(Case
(Case
˚C (
2 2
25˚C
–30˚C
I B =10mA I C =10A 125
5A
0 0 0
0 1 2 3 4 0 0.5 1.0 1.5 2.0 0 1 2

θ j - a (˚C /W)
(V C E =4V) (V C E =4V)
200 300 3
125˚C
Typ
100 1
100 25˚C
0.5
50 –30˚C
50
20 20 0.1
0.02 0.1 0.5 1 5 10 0.02 0.1 0.5 1 5 10 1 10 100 1000 2000

(V C E =12V)
40 30 100
3m
s
10
30
10
W
10
DC
ith
0m
ms
Typ 5
s
In
fin
ite
he
20 50
at
si
nk
0.5
10 Without Heatsink
Natural Cooling
Without Heatsink
0.1 3.5
0 0
–0.02 –0.1 –1 –10 3 5 10 50 100 200 0 25 50 75 100 125 150
109
High hFE
Silicon NPN Triple Diffused Planar Transistor Application : Audio Temperature Compensation and General Purpose
10.1±0.2
4.0±0.2
2.8 c0.5
8.4±0.2
16.9±0.3
ø3.3±0.2
IC 3 A hFE VCE=4V, IC=0.5A 500min a
0.8±0.2
b
IB 1 A VCE(sat) IC=1A, IB=20mA 0.5max V
±0.2
3.9
13.0min
Tj 150 °C COB VCB=10V,f=1MHz 30typ pF 1.35±0.15
Tstg 1.35±0.15
–55 to +150 °C
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
B C E

(V CE =4V)
3 1.5 3
A A
3 0m 1 8m
A
12m
2.5
8mA

2 1 2
5m A
3mA 1.5
2mA
Temp)
p)
Tem
mp)
1 0.5 3A 1
e Te
se
1mA
(Case
(Ca
(Cas
I B =0.5mA 2A
˚C
–55˚C
0.5
125
25˚C
I C =1A
0 0 0
0 1 2 3 4 5 6 1 10 100 1000 0 0.5 1 1.5

θ j- a ( ˚C/W)
(V C E =4V) (V C E =4V)
3000 5000 7
125˚C
Typ 25˚C 5
D C Cur r ent Gai n h FE
1000 1000 –55˚C
500
500
100
50
100 20 1
0.01 0.1 0.5 1 3 0.01 0.1 0.5 1 3 1 10 100 1000 2000

(V C E =12V)
60 10 30
Natural Cooling
Silicone Grease
5 1m
Heatsink: Aluminum
M aximum Power Dissipa tion P C (W)
s
10 in mm
m
s
Typ
10
40 DC 20
0m
W
s
ith
1 In
fin
ite
150x150x2
0.5 he
1 00x 1 0 at
0x si
20 2 nk
10
Without Heatsink
50x50x2
Natural Cooling
0.1
Without Heatsink
2
0 0.05 0
–0.005 –0.01 –0.1 –1 3 5 10 50 100 0 25 50 75 100 125 150
110
2SC4511
4.0±0.2
2.8 c0.5
8.4±0.2
16.9±0.3
ø3.3±0.2
0.8±0.2
b
PC fT VCE=12V, IE=–0.5A 20typ MHz
±0.2
3.9
30(Tc=25°C) W
13.0min
1.35±0.15
Tstg –55 to +150 °C ∗hFE Rank O(50 to100), P(70 to140), Y(90 to180)
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
B C E

(V CE =4V)
6 3 6
A A A A
0m m 80m
0m 1 00
20 15
5

50 mA
4 2 4
3 30mA
e Tem )
mp
)
p)
Temp
e Te
2 20mA 1 2
Cas
(Case
(Cas
˚C (
I B =10mA
–30˚C
25˚C
125
1
I C =6A
4A
2A
0 0 0
0 1 2 3 4 0 0.5 1.0 1.5 0 1 2

θ j- a ( ˚C/W)
(V C E =4V) (V C E =4V)
300 200 5
125˚C
100 25˚C
Typ
100
–30˚C
50 1
50
0.5
30 20 0.4
0.02 0.1 0.5 1 56 0.02 0.1 0.5 1 56 1 10 100 1000 2000

(V C E =12V)
40 20 30
10
10 m
s
5 10
30 0m
W
DC s
ith
20
In
Typ
fin
ite
he
20 1
at
si
nk
0.5
10
10
Without Heatsink
Natural Cooling
0.1
Without Heatsink
2
0 0.05
–0.02 –0.1 –1 –6 3 5 10 50 100 0
0 25 50 75 100 125 150
111
2SC4512
10.2±0.2 4.8±0.2
3.0±0.2

16.0±0.7
V
8.8±0.2
IC hFE 50min a ø3.75±0.2
6 A VCE=4V, IC=2A
b
PC 50(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz 1.35
4.0max
12.0min
-0.1

B C E
2.5 1.4

(V CE =4V)
6 3 6
A A A A
0m m 80m
0m 1 00
20 15

50 mA
4 2 4
30mA
e Tem )
mp
)
p)
Temp
e Te
2 20mA 1 2
Cas
(Case
(Cas
˚C (
I B =10mA
–30˚C
25˚C
125
I C =6A
4A
2A
0 0 0
0 1 2 3 4 0 0.5 1.0 1.5 0 1 2

θ j - a (˚ C/W)
(V C E =4V) (V C E =4V)
300 200 5
125˚C
100 25˚C
Typ
100
–30˚C
50 1
50
0.5
30 20 0.4
0.02 0.1 0.5 1 56 0.02 0.1 0.5 1 56 1 10 100 1000 2000

(V C E =12V)
40 20 50
10
100ms 10
m
5 s
40
30
W
DC
ith
In
Typ
fin
30
ite
he
20 1
at
si
nk
0.5 20
10
Without Heatsink
Natural Cooling 10
0.1
Without Heatsink
2
0 0.05
–0.02 –0.1 –1 –6 3 5 10 50 100 0
0 25 50 75 100 125 150
112
2SC4517/4517A
Ratings Ratings
2SC4517 2SC4517A 2SC4517 2SC4517A 10.1±0.2 4.2±0.2
4.0±0.2
2.8 c0.5
VCBO 900 1000 V ICBO VCB=800V 100max µA
µA
8.4±0.2
16.9±0.3
a
0.8±0.2
b
±0.2
3.9
13.0min
1.35±0.15
1.35±0.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
B C E
250 250 1 10 –5 0.15 –0.45 0.7max 4max 0.5max b. Lot No.
A (V CE =4V)
3 0m 1.5 3
40 300mA I C /I B =5 Const.
200 mA

150 mA
2 1.0 2
100m A V B E (sat)
1 I B =40mA 0.5 1
V C E (sat)
0 0 0
0 1 2 3 4 0.03 0.05 0.1 0.5 1 5 0 0.2 0.4 0.6 0.8 1.0

θ j - a (˚ C/W)
(V C E =4V)
50 7 4
5
125˚C
t s tg
25˚C V C C 250V
I C :I B 1 :I B2 =1:0.15:–0.45
1
Switching Ti me
–55˚C
1
0.5 tf
10
t on 0.5
5 0.1 0.3
0.02 0.05 0.1 0.5 1 3 0.2 0.5 1 3 1 10 100 1000
10 10 30
50
µs
5 10 5
0µ
s
W
ith
1 1 20
In
fin
ite
0.5 0.5
he
at
si
nk
Without Heatsink
0.1 0.1 10
Natural Cooling
0.05 0.05 IB2=–1.0A
Natural Cooling
Duty:less than 1%
Without Heatsink
2SC4517 2SC4517A 2
0.01 0.01 0
2 5 10 50 100 500 1000 50 100 500 1000 0 25 50 75 100 125 150
113
2SC4518/4518A
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose
Ratings Ratings
2SC4518 2SC4518A 2SC4518 2SC4518A 10.1±0.2 4.2±0.2
4.0±0.2
2.8 c0.5
VCBO 900 1000 V ICBO VCB=800V 100max µA
µA
8.4±0.2
16.9±0.3
a
IC 5(Pulse10) A hFE VCE=4V, IC=1.8A 10 to 25
0.8±0.2
b
±0.2
3.9
13.0min
Tj 1.35±0.15
150 °C fT VCE=12V, IE=–0.35A 6typ MHz
1.35±0.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
B C E
250 139 1.8 10 –5 0.27 –0.9 0.7max 4max 0.5max b. Lot No.
(V CE =4V)
5 1.5 5
0 mA 600mA I C /I B =5 Const.
70
400 mA
4 4

250 mA 1.0
3 3
V B E (sat)
150 mA
2 2
0.5
I B =50mA
1 1
V C E (sat)
0 0 0
0 1 2 3 4 0.03 0.05 0.1 0.5 1 5 10 0 0.2 0.4 0.6 0.8 1.0 1.2

θ j - a (˚C /W)
(V C E =4V)
50 7 4
5
125˚C
t s tg
25˚C V C C 250V
I C :I B 1 :I B 2 =1:0.15:–0.5
1
Swi tchi ng T im e
–55˚C
tf 1
0.5
10
t on 0.5
5 0.1 0.3
0.02 0.05 0.1 0.5 1 5 0.2 0.5 1 5 1 10 100 1000
20 20 35
10 10 10
0µ
s 30
5 5
W
ith
Collector Curr ent I C ( A)
In
fin
ite
20
1 1
he
at
si
0.5
nk
0.5
Without Heatsink
Natural Cooling 10
L=3mH
Without Heatsink IB2=–1.0A
0.1 0.1
Natural Cooling Duty:less than 1%
2SC4518 2SC4518A 2
0.03 0.03 0
10 50 100 500 1000 50 100 500 1000 0 25 50 75 100 125 150
114
2SC4546
Silicon NPN Triple Diffused Planar Transistor (High Voltage and Ultra-high Speed Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose
4.0±0.2
2.8 c0.5
8.4±0.2
16.9±0.3
ø3.3±0.2
10 to 25 a
IC 7(Pulse14) A hFE VCE=4V, IC=3A
0.8±0.2
b
PC VBE(sat) IC=3A, IB=0.6A 1.3max V
±0.2
3.9
30(Tc=25°C) W
13.0min
1.35±0.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
B C E
200 67 3 10 –5 0.6 –1.2 0.5max 2max 0.15max b. Lot No.
I C – V CE Characteristics (Typical) V CE ( sat ) – I C Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =4V)
7 1.0 7
1A 800mA I C / I B =5 Const.
6 60 0m A 6

40 0m A
5 5
300 mA
4 4
200m A 0.5
3 3
)
mp)
Temp
p)
125˚C (Case Temp)
Tem
e Te
(Case
2 2
se
(Cas
25˚C (Case Temp)
(Ca
I B =50m A
25˚C
–30˚C
˚C
1 1
125
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 10 0 0.5 1.0

θ j- a ( ˚ C/W)
(V C E =4V)
50 2 4
125˚C t s tg
1
25˚C
0.5
–30˚C tf
Sw it ching Time
1
t on
0.1
10
0.05 0.5
V C C 200V
I C :I B1 :I B 2 =5:1:–2
5 0.02 0.3
0.02 0.05 0.1 0.5 1 5 7 0.2 0.5 1 5 1 10 100 1000
20 20 30
10
10 0µ 10
5
W
5
ith
20
In
fin
ite
he
at
si
1 1
nk
Without Heatsink
Natural Cooling 10
0.5 0.5
Duty:less than 1%
Without Heatsink
2
0.1 0.1 0
10 50 100 500 700 10 50 100 500 700 0 25 50 75 100 125 150
115
2SC4557
0.8±0.2
15.6±0.2 5.5±0.2
µA
5.5
9.5±0.2
23.0±0.3
ø3.3±0.2
1.6
IB 5 VCE(sat) IC=5A, IB=1A 0.5max V b
A
3.0
PC 80(Tc=25°C) W VBE(sat) IC=5A, IB=1A 1.2max V
3.3
16.2
2.15
1.05 +0.2
-0.1
■Typical Switching Characteristics (Common Emitter) 5.45±0.1 5.45±0.1 0.65 +0.2

-0.1 3.35
1.5 4.4 1.5

(I C /I B =5) (V CE =4V)
10 2 10
A
1.2 1A
80 0m A
8 8
600 mA

6 400m A 6
1 V B E (sat)
p)
)
Temp
Temp)
em
200mA –55˚C (Case Temp)
eT
4 4
Temp)
25˚C (Case
(Case
Cas
(Case
p)
ase Tem
˚C (
I B =100mA 125˚C (C
25˚C
25˚C
125
–55˚C
2 2
p)
Te m
ase
V C E (sat) 125˚C (C 5˚C
0 –5
0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 10 0 0.2 0.4 0.6 0.8 1.0 1.2

θ j- a (˚ C/W)
(V C E =4V)
50 10 2
125˚ C
t s tg
5
25 ˚C
V C C 250V 1
I C :I B1 :–I B2 =10:1.5:3
–5 5˚ C
0.5
Sw it ching Time
0.5
10 t on
tf
5 0.1 0.1
0.02 0.05 0.1 0.5 1 5 10 0.2 0.5 1 5 10 1 10 100 1000
20 20 80
10 10 10
0µ
s
60
W
5 5
ith
In
fin
ite
he
40
at
si
1 1
nk
Without Heatsink
Natural Cooling
L=3mH
Duty:less than 1%
Without Heatsink
3.5
0.1 0.1 0
10 50 100 500 1000 10 50 100 500 1000 0 25 50 75 100 125 150
116
2SC4662
10.1±0.2
4.0±0.2
2.8 c0.5
8.4±0.2
16.9±0.3
ø3.3±0.2
IC 5(Pulse10) hFE VCE=4V, IC=1.5A 10 to 30 a
A
0.8±0.2
b
IB 2 A VCE(sat) IC=1.5A, IB=0.3A 0.5max V
±0.2
3.9
13.0min
Tstg COB VCB=10V, f=1MHz 30typ 1.35±0.15

–55 to +150 °C pF
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
B C E
200 133 1.5 10 –5 0.15 –0.3 1max 2.5max 0.5max b. Lot No.
(I C /I B =5) (V C E =4V)
2 5

–55˚C
3
1 V B E (sat)
Temp)
–55˚C (Case
p)
)
mp)
Temp
em
mp) 2
Te
25˚C (Case
e Te
eT
(Case
Cas
p)
)
ase Tem
(Cas
mp
125˚C (C
˚C (
Te
–55˚C
1
25˚C
e
as
125
C (C
V C E (sat) 125˚
25˚C
0 0
0.01 0.05 0.1 0.5 1 5 0 0.2 0.4 0.6 0.8 1.0 1. 2 1.4
Collector Current I C (A) Base-Emittor Voltage V B E (V)

θ j - a ( ˚ C/W)
(V C E =4V)
50 3 5
125˚C V C C 200V
I C :I B 1 :I B2 =10:1:–2
25˚C t s tg
1
–55˚C
Sw it ching Time
0.5
t on 1
10
tf
0.5
5 0.1 0.4
0.01 0.05 0.1 0.5 1 5 0.1 0.5 1 3 1 10 100 1000
20 20 30
10 10
10
0µ
5 s
5
W
ith
20
In
fin
ite
he
at
si
1 1
nk
Without Heatsink
Natural Cooling 10
L=3mH
Duty:less than 1%
Without Heatsink
2
0.1 0.1 0
5 10 50 100 500 5 10 50 100 500 0 25 50 75 100 125 150
117
2SC4706
15.6±0.4 4.8±0.2
5.0±0.2
µA
2.0
1.8

19.9±0.3
4.0
a
b
4.0max
20.0min
Tstg –55to+150 °C COB VCB=10V, f=1MHz 160typ pF 1.05 +0.2
-0.1 0.65 +0.2
-0.1

B C E
(V CE =4V)
14 2 14
6 A 1.2 A I C /I B =5 Const.
1.
12 12

800mA
10 10
600mA
8 8
400m A
)
1
emp
mp)
)
Temp
6 6
eT
e Te
V B E (sat)
Cas
(Case
(Cas
200mA
˚C (
4 4
25˚C
125
–55˚C
I B =100mA
2 2
V C E (sat)
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 10 0 0.2 0.4 0.6 0.8 1.0 1.2

(V C E =4V)
50 8
125˚C 5
t s tg
V C C 250V
25˚C
I C :I B1 :–I B2 =10:1.5:5
1
Sw it ching Time
–55˚C
t on
0.5
tf
10
5 0.1
0.02 0.05 0.1 0.5 1 5 10 14 0.2 0.5 1 5 10 14
Collector Current I C (A) Collector Current I C (A)
50 50 130
10
0µ
s
100
10 10
W
ith
In
5
fin
ite
he
at
si
nk
Without Heatsink
1 1 Natural Cooling 50
L=3mH
IB2=–1.0A
0.5 Without Heatsink 0.5 Duty:less than 1%
Natural Cooling
Without Heatsink
3.5
0.1 0.1 0
10 50 100 500 1000 50 100 500 1000 0 25 50 75 100 125 150
118
2SC4883/4883A
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1859/A) Application : Audio Output Driver and TV Velocity-modulation
Ratings Ratings
2SC4883 2SC4883A 2SC4883 2SC4883A 10.1±0.2 4.2±0.2
4.0±0.2
2.8 c0.5
ICBO
VCEO 150 180 V VCB= 150 180 V
8.4±0.2
16.9±0.3
VEBO 6 V IEBO VEB=6V 10max µA
ø3.3±0.2
IC 2 180min a
A V(BR)CEO IC=10mA 150min V
0.8±0.2
b
IB 1 A hFE VCE=10V, IC=0.7A 60 to 240
PC 20(Tc=25°C) W VCE(sat) 1.0max
±0.2
V
3.9
IC=0.7A, IB=70mA
13.0min
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 30typ pF 1.35±0.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
B C E

(V C E =4V)
100mA 60mA
2 3 2
A
30m
A
15m

A
10m 2
1 1
Temp)
emp
I B =5mA
mp)
eT
e Te
1
(Case
Cas
(Cas
˚C (
–55˚C
25˚C
125
I C =2A
0.5A 1A
0 0 0
0 2 4 6 8 10 2 5 10 50 100 500 1000 0 0.5 1.0

θ j- a ( ˚ C/W)
(V C E =4V) (V C E =4V)
300 300 7
125˚C 5
Typ
25˚C
100 100 –55˚C
50
50
40 30 1
0.01 0.05 0.1 0.5 1 2 0.01 0.05 0.1 0.5 1 2 1 10 100 1000 2000

(V C E =12V)
160 5 20
1m
140
10

ms
Typ
10
D
0m
120
1 C
W
s
ith
In
100 0.5
fin
ite
he
80 10
at
si
nk
60 0.1
Without Heatsink
40 0.5
Natural Cooling
1.2SC4883
20 2.2SC4883A
Without Heatsink
1 2 2
0 0.01 0
–0.01 –0.1 –1 –2 1 5 10 50 100 200 0 25 50 75 100 125 150
119
LAPT 2SC4886
Symbol Ratings Symbol Conditions Ratings
0.8±0.2
Unit Unit 15.6±0.2 5.5±0.2
µA
5.5
9.5±0.2
23.0±0.3
ø3.3±0.2
1.6
b
IB 3 A VCE(sat) IC=5A, IB=500mA 2.0max V
3.0
PC fT VCE=12V, IE=–2A 60typ MHz
3.3
80(Tc=25°C) W
1.75
Tj 150 °C COB VCB=10V, f=1MHz 200typ pF 0.8
16.2

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POWER TRANSISTORS

SANKEN ELECTRIC CO.,LTD. Bulletin No

Collector Current IC(A)

MT-25 FM20 MT–100 FM100

MT-25 FM20 MT–100 FM100

Part No. PC(W) VCEO(V) IC (A) hFE(min) fT(MHz) Package

2SA1725/2SC4511 30 FM20 (TO220F)

2SA1726/2SC4512 50 MT-25 (TO220)

2SA1695/2SC4468 100 140 10

● LAPT (Multi emitter for High Frequency)

Part No. PC(W) VCEO(V) IC (A) hFE(min) fT(MHz) Package

2SA1860/2SC4886 80 14 50 FM100 (TO3PF)

2SA1186/2SC2837 100 150 10 60

2SA1386/2SC3519 130 160 MT-100 (TO3P)

2SA1215/2SC2921 150 160 50

2SA1216/2SC2922 200 180 40 MT-200 (2-screw mount)

● Transistors with built in temperature compensation diodes for audio amplifier

Part No. PC(W) VCEO(V) IC (A) hFE(min) Emitter Resistor(Ω)

SAP09P/SAP09N 80 150 10 5000 0.22

SAP10P/SAP10N 100 150 12 5000 0.22

SAP16P/SAP16N 150 160 15 5000 0.22

■ Temperature compensation Transistors and Driver Transistors

2SC4495 25 50 3 500 40 Temperature compensation

2SC4883 150 Driver, Complement 2SA1859

2SA1859 –150 Driver, Complement 2SC4883

F ⋅ R = r × 100 (%/1,000 hours)⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅(2)

Test Details of the Testing Method LTPD(%)

Collector dissipation with maximum junction temperature is applied continuously at

Figure 3 Quality Assurance System

Incoming Inspection Physical and Chemical Inspection

Production Process Quality Control

Marking Periodical Quality Assurance Test

Derating coefficient DF (%)

Type Name:Mold(10)Mica Type Name:Mold(14)Mica Type Name:Mold(9)Mica

■Switching Characteristics Test Circuit/Measurement Wave Forms

• Ta=25°C unless otherwise specified.

VCEO –150 V IEBO VEB=–5V –100max µA

5.45±0.1 5.45±0.1 1.4

VCC RL IC VB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

Collector Current I C (A)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

Transient Thermal Resistance

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

VEBO –5 V V(BR)CEO IC=–25mA –160min V

5.45±0.1 5.45±0.1 3.0 +0.3

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

Collector Current I C (A)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

DC Curr ent Gain h FE

Transient Thermal Resistance

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

VEBO –5 V V(BR)CEO IC=–25mA –180min V

PC 200(Tc=25°C) W fT VCE=–12V, IE=2A 40typ MHz 2

5.45±0.1 5.45±0.1 3.0 +0.3

■Typical Switching Characteristics (Common Emitter) B C E

I C – V CE Characteristics (Typical) V CE ( sa t ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

Collector Current I C (A)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

VCEO –60 V IEBO VEB=–6V –100max µA

■Typical Switching Characteristics (Common Emitter) 2.5

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)