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ST 2SC1213 / 2SC1213A

NPN Silicon Epitaxial Planar Transistor


Low frequency amplifier applications.

The transistor is subdivided into three groups, B, C


and D, according to its DC current gain. As
complementary type the PNP transistor ST 2SA673
and ST 2SA673A are recommended.

On special request, these transistors can be


manufactured in different pin configurations.

TO-92 Plastic Package


Weight approx. 0.19g

Absolute Maximum Ratings (Ta = 25 oC)

Symbol Value Unit

ST 2SC1213 ST 2SC1213A
Collector Base Voltage VCBO 35 50 V
Collector Emitter Voltage VCEO 35 50 V
Emitter Base Voltage VEBO 4 V

Collector Current IC 500 mA


Power Dissipation Ptot 400 mW
O
Junction Temperature Tj 150 C
O
Storage Temperature Range TS -55 to +150 C

SEMTECH ELECTRONICS LTD.


(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 7/12/2002
ST 2SC1213 / 2SC1213A

Characteristics at Tamb=25 OC

Symbol Min. Typ. Max. Unit


DC Current Gain
at IC=10mA, VCE=3V
B hFE 60 - 120 -

C hFE 100 - 200 -

D hFE 160 - 320 -


at IC=500mA, VCE=3V hFE 10 - - -
Collector Cutoff Current
at VCB=20V ST 2SC1213 ICBO - - 0.5 μA
at VCB=20V ST2SC1213A ICBO - - 0.5 μA
Collector Base Breakdown Voltage
at IC=10μA ST 2SC1213 V(BR)CBO 35 - - V
ST 2SC1213A V(BR)CBO 50 - - V
Collector Emitter Breakdown Voltage
at IC=1mA ST 2SC1213 V(BR)CEO 35 - - V
ST 2SC1213A V(BR)CEO 50 - - V
Emitter Base Breakdown Voltage
at IE=10μA ST 2SC1213 V(BR)EBO 4 - - V
ST 2SC1213A V(BR)EBO 4 - - V
Collector Saturation Voltage
at IC=150mA, IB=15mA ST 2SC1213 VCE(sat) - 0.2 0.6 V
ST 2SC1213A VCE(sat) - 0.2 0.6 V
Base Emitter Voltage
at IC=10mA, VCE=3V ST 2SC1213 VBE - 0.64 - V
ST 2SC1213A VBE - 0.64 - V

SEMTECH ELECTRONICS LTD.


(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 7/12/2002