(a) Design an intensity modulator by placing the crystal between polarizers (not necessarily crossed).
For each of the three propagation directions, derive an expression for Iout /Iin where Iin and Iout
are the intensity of incident and transmitted beams, respectively. Clearly specify your chosen
orientation of the polarizers relative to the axes of the crystal (a diagram is required for each
case).
(b) Suppose that the wavelength of the light to be modulated is λ = 0.6 µm and that Lx = Ly = Lz .
Given that no = 2.286, ne = 2.200 and that
r22 = r12 = r61 = 6.8 pm/V
r13 = r23 = 9.6 pm/V
r42 = r51 = 32.6 pm/V
r33 = 30.9 pm/V
which of the three cases makes the most efficient intensity light modulator in terms of intensity
change per volt?
(c) What is the half wave voltage for this system?
(d) How could you significantly lower the halfwave voltage?
transparent electrode
Lx
Ly
Lz
z
y
x
~ V
transparent electrode
1
2. (50 marks) A crystal cut with two parallel surfaces can be considered as a Fabry-Perot etalon.
Suppose a laser beam around 1.55 µm is normally incident into a l = 2 mm long GaAs crystal. At
this wavelength, n = 3.39886, dn/dλ = −0.115 µm−1 .
(a) Prove that the free spectrum range is ∆ν = c/2ng l, where ng is the group index. Calculate ∆ν
for λ = 1.55 µm.
(b) What is the f inesse of the cavity? Determine the FWHM of the tranmission peaks.
(c) If the loss coefficient of the medium is α = 1 cm−1 , prove that the transmission is
It (1 − R)2 G
=
Ii (1 − GR)2 + 4GRsin2 (δ/2)