Tutorial 1 – MOS Device Model

1. In the design of the MOSFET-C filter from an active-RC filter with R=2.72
kohms, an n-channel transistor in triode region which has μnCox=92μA/V2,
W/L=20 μm/2μm, Vtn=0.8V and VDS near zero is used. To realize the
resistance R, determine the gate bias voltage of the MOSFET required.

[Answers: VGS=1.2V]

2. Draw the 3 operating regions for a CMOS transistor (ID vs VDS) and state
clearly the bias conditions in term of VGS, VTH and VDS

3. Find ID for an n-channel transistor that has μnCox=92μA/V2, W/L=20 μm/2μm,

VGS=1.2V, Vtn=0.8V, λ=95.3 ×10-3 V-1 (assumed constant for VDS)
(a) VDS= Veff
(b) VDS= 0.9V

[Answers: (a) 73.6 μA; (b) 77.1 μA ]

4. Derive the low frequency model parameters for an n-channel transistor that
has μnCox=92μA/V2, W/L=20 μm/2μm, VGS=1.2V, Vtn=0.8V, VDS= Veff ,
λ=95.3 ×10-3 V-1.

[Answers: gm=0.368mA/V, rds= 143kohms]

5. Consider the source degenerated current mirror, where Iin=100μA, each

transistor has W/L=100 μm/1.6μm and Rs=5kΏ. Given that μnCox=92μA/V2,
Vtn=0.8V and rds=8000L(μm)/ID(mA), find rout for the current mirror.

[Answer: 814kΏ]

6. Consider the cascode current mirror, where Iin=100μA, and each transistor has
W/L=100 μm/1.6μm. Given that μnCox=92μA/V2, Vtn=0.8V and
rds=8000L(μm)/ID(mA), find rout for the current mirror.
[Answer: approximately 20MΏ]
7. Derive the 3 representations of the transconductance

8. Explain the operation of the MOS Transistor in the Accumulation, Depletion

and Inversion Stage.