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This document provides specifications for the BSS66 and BSS67 NPN silicon planar medium power switching transistors. Key details include:
1) Maximum ratings for collector-base voltage, collector-emitter voltage, emitter-base voltage, peak pulse current, continuous collector current, and power dissipation.
2) Electrical characteristics including collector-emitter breakdown voltage, collector-base breakdown voltage, emitter-base breakdown voltage, saturation voltages, static forward current transfer ratio, transition frequency, and capacitances.
3) Switching times for delay, rise, storage, and fall under specified conditions.
This document provides specifications for the BSS66 and BSS67 NPN silicon planar medium power switching transistors. Key details include:
1) Maximum ratings for collector-base voltage, collector-emitter voltage, emitter-base voltage, peak pulse current, continuous collector current, and power dissipation.
2) Electrical characteristics including collector-emitter breakdown voltage, collector-base breakdown voltage, emitter-base breakdown voltage, saturation voltages, static forward current transfer ratio, transition frequency, and capacitances.
3) Switching times for delay, rise, storage, and fall under specified conditions.
Hak Cipta:
Attribution Non-Commercial (BY-NC)
Format Tersedia
Unduh sebagai PDF, TXT atau baca online dari Scribd
This document provides specifications for the BSS66 and BSS67 NPN silicon planar medium power switching transistors. Key details include:
1) Maximum ratings for collector-base voltage, collector-emitter voltage, emitter-base voltage, peak pulse current, continuous collector current, and power dissipation.
2) Electrical characteristics including collector-emitter breakdown voltage, collector-base breakdown voltage, emitter-base breakdown voltage, saturation voltages, static forward current transfer ratio, transition frequency, and capacitances.
3) Switching times for delay, rise, storage, and fall under specified conditions.
Hak Cipta:
Attribution Non-Commercial (BY-NC)
Format Tersedia
Unduh sebagai PDF, TXT atau baca online dari Scribd
BSS67 - M7 E C BSS66R - M8 BSS67R - M9 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Peak Pulse Current ICM 200 mA Continuous Collector Current IC 100 mA Base Current IB 50 mA Power Dissipation at Tamb=25°C PTOT 330 mW Operating and Storage Temperature Range t j:tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Collector-Emitter Breakdown Voltage V(BR)CEO 40 V IC=1mA Collector-Base Breakdown Voltage V(BR)CBO 60 V IC=10µA Emitter-Base Breakdown Voltage V(BR)EBO 6 V IE=10µA Collector- Emitter Cut-off Current ICES 50 nA VCES=30V Collector-Emitter VCE(sat) 0.20 V IC=10mA, IB=1mA Saturation Voltage 0.30 V IC=50mA, IB=5mA* Base-Emitter Saturation Voltage VBE(sat) 0.65 0.85 V IC=10mA, IB=1mA 0.95 V IC=50mA, IB=5mA* Static Forward Current BSS66 hFE 20 IC=100µA, Transfer Ratio 35 IC=1mA, 50 150 IC=10mA, VCE=1V 30 IC=50mA*, 15 IC=100mA*, Static Forward Current BSS67 hFE 40 IC=100µA, Transfer Ratio 70 IC=1mA, 100 300 IC=10mA, VCE=1V 60 IC=50mA*, 30 IC=100mA*, Transition Frequency BSS66 fT 250 MHz IC=10mA, VCE=20V BSS67 300 MHz f=100MHz Collector-Base Capacitance Cobo 4 pF VCB=5V, f=100kHz Emitter-Base Capacitance Cibo 8 pF VEB=0.5V, f=100kHz Noise Figure N Typ. 6 dB IC=100µA, VCE=5V RS=1kΩ, f=10Hz to15.7 kHz Switching times: Delay; Rise td; tf 35 ns VCC=3V, IC=10mA Storage Time ts 200 ns IB1= IB2 =1mA Fall Time tf 50 ns * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% PAGE NUMBER