Strain engineering

(Si/SiGe heterostructures
MOSFETs)
by

RAMA PRADEEP REDDY.G

Research Advisor

prof. BINDHU.B
 SiGe MOSFET Technology
 Issues in Scaled CMOS
 Bandstructure, Transport and Strain
 Enhanced Mobility Channels
- Strained Si and SiGe
 Process Integration Challenges
 CONVENTIONAL MOSFET
Isometric view of
device and
equilibrium band
diagram along
channel
Experimental output characteristics of n-channel and p-channel MOSFETs with 0.1
micron channel lengths. The curves exhibit almost equal spacing, indicating a linear
dependence of ID on VG, rather than a quadratic dependence. We also see that /D is not
constant but increases somewhat with VD in the saturation region. The p-channel
devices have lower currents because hole mobilities are lower than electron mobilities.
 BULK Si MOSFETs

Bulk Si cmos scaling reached its limit!!!!!!!!!!!!!

 Performance improves as
dimensions are scaled
what's wrong with bulk Si
MOSFETs?
 Approaching physical limits to geometric
scaling(to x and L)
-so mobility cannot be increased further
IS STRAIN A SOLUTION?
Mobility is one term that can be exploited by
strain technique (ie; by using strained
channels)
SILICON WORKS BETTER UNDER STRAIN!
 Velocity field relation

Average drift velocity of

electron can be related to
applied field as

Electric field direction

ν=μE
-
+
where μ=qτ /m
Relaxation time and
effective mass are
affected by Crystal
Structure
 Strained-silicon: improved performance

μ=qτ /mC
For strained silicon
reduced effective mass (lower mass in transport

direction)
increased relaxation time (fewer states into which to

scatter)
Therefore
--- increased mobility
--- increased velocity
--- increased current
Strained-silicon : improved performance
 HETERO STRUCTURES
✔ Cause
changesbandgap
effective mass
mobility
optical properties
STRAIN IN SILICON
 Si/SiGe-lattice mismatch

The 4.2% lattice mismatch between Si and Ge has been

exploited for various Si/SiGe heterostructure devices.
Si/SiGe Crystal Structures
Si/Strained-SiGe/Si Structure

SiGe (larger
lattice
constant)

Si (smaller lattice
constant)
Si/Strained-SiGe/Si Structure

silicon

Compressive strain in SiGe

(now SiGe has lattice
constant same as silicon)

Si (smaller lattice constant)

no