is and Design, 2" edition ns Manu; Chapter 5 Exercise Solutions ES.1 (@) Vg =12V Veg =2¥ Vas (sat) = Vos Voy =2-5.2 = 08V (i) ¥yg = 0.4 =9 Nonsaturation (i) Vgg 319 Saturation Gili) Vag =50 Saturation Vog = 04=9 Nonsaturation Vpg ==> Nonsaturation Vos =5=2 Saturation Wu, 2L 3,9)(8.85x10 te 450x10* Ke (100)(500)(7.67210") * 2(7) (0) Voy =12V, Vog =2V @ Vg =04V => Nonsaturation 1, = (0274f2(2-12¥04)-(04)']J> 1p 0132 mA Gi) Vgp=1¥ = Saturation 1, =(02742-12)' = [)=0175mA Gil) pp =5V => Saturation Ty =(0274Y2-12)' => 1, = 0175 mA 1.87x10% F fem K, =0274 AV? Vpy =W12V, Veg =2V) @ Vpg = 0.4 V => Nonsaturation Tp =(0274)[2{2+12X04)-(04)'] => T, = 0.658 mA (i) Veg =1V => Nonsaturation 15 =(0.274{2(2+12\1)-(1)'] = 1p = 148 mA (iil) Ypg =SV => Saturation Ty = (02742412) = Ip =2B1mA ES3 Vay =1V Wop = 3V Vag = 4 SV Vag = 45> Vog(sat) = Ver —Vey = 3: ‘Transistor biased in the saturation region 15 = Kos -Viu)' = 08 = K,(3-1)' => K,=02mA/v? (@) Voq =2V, Vg =45V Saturation region: 1, =(02)(2=17 => 1, =02mA (©) Vos =3V. Vog =1V Nonsaturation region: 1, =(02[2G-11)-(1)] > 1 =06ma E54 @) Vip =-2V, Vag =3¥ Vep( sat) = Veg +Vqp =3-2=1V @) Yq =05V => Nonsaturation (ii) Vag #2 =9 Saturation Gil) Vjp =5V = Saturation (©) Vip =05V, Vag =3V Veo( sat) = Vo +Vyp = 3+05=35V @) Vg = OSV = Nonsaturation Gi) Vj =2V = Nonsaturation Gil) Vig = SV => Saturation ESS (@) A=0, Vos(sat}=25-08=L7V Fot Vpg =2V. Vpg = 10V => Saturation Region 1, =(01X25-08) => 1, = 0.289 mA ) 4=0020" Ty = EVs ~ Ven) (1+ Vos) For Vog =2V Ty = (01X25~08)'[1+(0.02\2)] => 1, =0300 mA Vos =10¥ 1,=(0Af(25-08)'(1+(002X10))] > I = 0347 mA (©) For part (a), A=0=9 For part (b), 2= 002", 1 =[AK, Ver -Yme)"] = [(002X01)(25-08)']" (73 KLB56 Vie = Vewo + 1{ 28; + Vee ~ f20, | 2, =O.70V. Ving =1V (2) Veg =029, Voy v (©) Veg IV, Voy = 14 (038 VOTHI-VOF] => Vy = LI6V (Ch Vg 4 V0 + (0380744 - VO7] = Vy =147V Vor = Vq-V; =-1-(igR, -5)=4~1,R, Assume transistor is biased in saturation region To = K (Wag Voy) = Pe Rs 4-Ves = (05 0.1Mes — 1] => O5V3,-35=0=9 Vos =265V (05)(2.65-1)' => 15 =136mA 10-1,(R, + Rp) = 10-(136\(1+2) Vos = 5:92 V Vos > Vae(sat), Yes B58 ven (qBtg)i-s = (Ban -5=0714V IRs =(Ltue Vo =5-U.2Mp- 0714 54.286 -(1.3)l0 4.286 — Vig = (1.2)(0.25}« (Vie ~ 2¥sa(-1) + (-1)7) 4.286 — Vic = (0.2)¥3e - 0.6Fs6 +03 0.3Vde + 0.4¥sc - 3.986 = 0 2% edition Ma: 0.4 Vl0.ay? + 4(0.9)(8.986) ay Must use + sign => Vig = 3.04 V. Vso = Jp = (0,25)(3.04 = 1}? = Ip = 1.04 mA 0 ~Io( Re + Ro) = 10 ~(1.04){1.2 +4) = ¥en = 4.59 (sD Van > Ven(sat), Yes E59 ty = K Wor Ven) 0.4 = 0.25(Vos — 0.8) = bes = 2.06 ¥ Vos= (xen) Yoo 2.06 = ()es + Rasen Ay = 181.340 Vos =4= Von ~IpRo Ro = Sot = Rp = 875 0 Vpg > Vos(sat). Yes 0.1 = (0.080)(Voe ~ 1.2)" = Ves =2.32V $= 2.32 So Ry = SS3P os Aga 1680 Vos = Vo - Vs > Vo = Vos + Vs = 4.5— 2.92 Vp = 2.18 Rp = SMB ow SH 28 5 py = nr Ip OL Vag >Voo( sat), Yes ESL tp = RES and By = Wen +¥r) 0.12 = (0.050)(Vse — 0.8)" Veg = 2.35. V Re = NEES 5 ge waassin — (Rs + Ro) 8 = 204 (0.12)(63.75) — (0.12)Re Ro = 2O=(0-12M63.75) — 8 O12 => Ro = 36.25 kK VspTest Your Understanding ___.|.||....--=_—__—Chapter 5: Exercise Solutions £5.12, Y, Ty= BE Ia = Kos Voy)" 10—Veg = (10 0.2\ V3; -2VasVew +¥ 30) = Ves = 208s — Vos +8 gs Tes -2=0 ta Joy +407 22) Use + sign: Voe = Vpe = 3.7 V 10 = 3.77 Ip = D557 = tp = 0.620 ma Power = [pbs = (0.623)(3.7 056 = K,(22~1)* K,=0389 mA/V = W_(389)2)_ ww L #0) Lo ES.A4 (@) The transition point is Veo — Vine +Vrvol 1+ {Kao/ Ku) ~ VV Kol kus Lai (is VERDE 1+ Jo0570.01 Lae = 326 Va Ve =2Uv Voy = Vy ~Viuo = 224-159 Voy (©) We may write 15 = Keo Vexo ~Vovo)’ = (0.05)(2.24-1)* = [p= 769 uA ESAS oy, Yoon Ye *Vnal+ RalEa) ae 1+ 4 Roo) Ka S-1+i(1+ JKo/Ku) + [Rol Ka 2S+: Key /Ky = 5+. Kp /Ky => 5-25 ART, =F -161 ol K, 78, b. For Vy = 3, driver in nonsanurated region. Joo =lon Kaol2¥s — Vso Wo Va |= Rua Wose — Von)” o0—Yo Von 2.78(2(5 ~ 1)¥ - Vo] = [5 - Vo — a7? 22.24Ve - 2.7803 = (4 - Vo)” = 16- 8% 49 = 30.24% +16 =0 30.24 + of (90.24)? — 4(3.78)(36) WET) w= = wsostv ES.16 If the transistor is biased in the saruation region Kn) Tp = K, Ves -Vrw) Ip = (0.28)(2.8)? = Jp = 1.56. mA Vos = Von ~ Ip Rs = 10 ~ (1.56)(4) = Vos = 3.76 Vos > Vos — Viv = Vay 3.76 > =(-2.5) ‘Yes — biased in the saturation region. Power = IpVps = (1.56)(3.78) We have Vo, =12V < Vag =Vpy = Voy = 18 ¥ ‘Transistor is biased in the nonsaturation region. 152 Karo Wor VE] I, = 0.475 mA o47s= x,[2(0-(-18)K12)-(12)'] O47S= K(288)=> K,=0.165mA/V* WBS, Ko HG “T2 HUSH) Hoag