MOSIS WAFER ACCEPTANCE TESTS

RUN: T92Y (MM_NON-EPI_THK-MTL)

TECHNOLOGY: SCN018
Run type: DED

VENDOR: TSMC
FEATURE SIZE: 0.18 microns

INTRODUCTION: This report contains the lot average results obtained by MOSIS
from measurements of MOSIS test structures on each wafer of
this fabrication lot. SPICE parameters obtained from similar
measurements on a selected wafer are also attached.
COMMENTS: DSCN6M018_TSMC
TRANSISTOR PARAMETERS

W/L

MINIMUM
Vth

0.27/0.18

SHORT
Idss
Vth
Vpt

20.0/0.18

WIDE
Ids0

20.0/0.18

LARGE
Vth

50/50

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N-CHANNEL P-CHANNEL

UNITS

0.50

-0.49

volts

572
0.52
4.7

-276
-0.49
-5.2

uA/um
volts
volts

20.8

-15.2

pA/um

0.42
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-0.41

volts
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Vjbkd
Ijlk

-4.4
<50.0

volts
pA

171.0
406.07

-37.0
87.86

uA/V^2
cm^2/V*s

K' (Uo*Cox/2)
Low-field Mobility

3.7
<50.0

COMMENTS: Poly bias varies with design technology. To account for mask
bias use the appropriate value for the parameters XL and XW
in your SPICE model card.
Design Technology
XL (um) XW (um)
----------------------- -----SCN6M_DEEP (lambda=0.09)
0.00
-0.01
thick oxide
0.00
-0.01
SCN6M_SUBM (lambda=0.10)
-0.02
0.00
thick oxide
-0.02
0.00
FOX TRANSISTORS
Vth

GATE
Poly

PROCESS PARAMETERS
Sheet Resistance
Contact Resistance
Gate Oxide Thickness
PROCESS PARAMETERS
Sheet Resistance
Contact Resistance

N+
7.0
8.3
41
M3
0.08
9.74

P+
8.1
8.8

N+ACTIVE
>6.6
POLY
8.3
8.1

POLY_HRI

N+BLK
59.5

P+ACTIVE
<-6.6

M4
0.08
15.36

PLY+BLK
306.6

M5
0.07
21.50

UNITS
volts
M1
0.08

M6
0.01
23.45

M2
0.08
4.83
N_W
951

UNITS
ohms/sq
ohms
angstrom
UNITS
ohms/sq
ohms

COMMENTS: BLK is silicide block.

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CAPACITANCE PARAMETERS
Area (substrate)
Area (N+active)
Area (P+active)
Area (poly)
Area (metal1)
Area (metal2)
Area (metal3)
Area (metal4)
Area (metal5)
Area (r well)
Area (d well)
Area (no well)
Fringe (substrate)
Fringe (poly)
Fringe (metal1)
Fringe (metal2)
Fringe (metal3)
Fringe (metal4)
Fringe (metal5)
CIRCUIT PARAMETERS
Inverters
Vinv
Vinv
Vol (100 uA)
Voh (100 uA)
Vinv
Gain
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N+
P+
969 1234

POLY M1 M2 M3 M4 M5 M6 R_W
101 34 14 9 7 5 4
8517 53 20 14 11 9 8
8275
64 17 10 7 5 4
35 14 9 6 5
36 14 9 6
37 14 9
36 14
35

953
562
140
196

229

53 36 29 24 21 19
68 38 29 23 19 18
49 34
22 20
45 35 27 23
54 34 30
63 43
66

D_N_W
129

M5P N_W UNITS

130 aF/um^2
aF/um^2
aF/um^2
aF/um^2
aF/um^2
aF/um^2
aF/um^2
aF/um^2
1039
aF/um^2
aF/um^2
aF/um^2
aF/um^2
aF/um
aF/um
aF/um
aF/um
aF/um
aF/um
aF/um

UNITS
K
1.0
1.5
2.0
2.0
2.0
2.0

0.74
0.79
0.08
1.62
0.83
-24.67

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Ring Oscillator Freq.

D1024_THK (31-stg,3.3V)
DIV1024 (31-stg,1.8V)
Ring Oscillator Power
D1024_THK (31-stg,3.3V)
DIV1024 (31-stg,1.8V)

302.91
377.13
0.07
0.02

MHz
MHz
uW/MHz/gate
uW/MHz/gate

COMMENTS: DEEP_SUBMICRON

T92Y SPICE BSIM3 VERSION 3.1 PARAMETERS

SPICE 3f5 Level 8, Star-HSPICE Level 49, UTMOST Level 8
* DATE: May 21/09
* LOT: T92Y
WAF:
* Temperature_parameters=Default
.MODEL CMOSN NMOS (
+VERSION = 3.1
TNOM
+XJ
= 1E-7
NCH
+K1
= 0.5789116
K2
+K3B
= 0.0297124
W0
+DVT0W
= 0
DVT1W
+DVT0
= 1.2953626
DVT1
+U0
= 293.1687573
UA
+UC
= 7.061289E-11
VSAT
+AGS
= 0.4764546
B0
+KETA
= -0.0138552
A1
+RDSW
= 105.6133217
PRWG
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9103
=
=
=
=
=
=
=
=
=
=
=

27
2.3549E17
1.110723E-3
1E-7
0
0.3421545
-1.21942E-9
1.676164E5
1.617101E-7
1.09168E-3
0.5

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LEVEL
TOX
VTH0
K3
NLX
DVT2W
DVT2
UB
A0
B1
A2
PRWB

=
=
=
=
=
=
=
=
=
=
=
=

49
4.1E-9
0.3694303
1E-3
2.037748E-7
0
0.0395588
2.325738E-18
2
5E-6
0.3303025
-0.2
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+WR
= 1
+XL
= 0
+DWB
= -3.690793E-9
+CIT
= 0
+CDSCB
= 0
+DSUB
= 0.0442223
+PDIBLC2 = 2.701992E-3
+PSCBE1 = 4.494778E10
+DELTA
= 0.01
+PRT
= 0
+KT1L
= 0
+UB1
= -7.61E-18
+WL
= 0
+WWN
= 1
+LLN
= 1
+LWL
= 0
+CGDO
= 8.58E-10
+CJ
= 9.471097E-4
+CJSW
= 1.905901E-10
+CJSWG
= 3.3E-10
+CF
= 0
+PK2
= 2.247806E-3
+PU0
= -4.0206081
+PVSAT
= 2E3
*
.MODEL CMOSP PMOS (
+VERSION = 3.1
+XJ
= 1E-7
+K1
= 0.5722049
+K3B
= 4.2763642
+DVT0W
= 0
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WINT
XW
VOFF
CDSC
ETA0
PCLM
PDIBLCB
PSCBE2
RSH
UTE
KT2
UC1
WLN
WWL
LW
CAPMOD
CGSO
PB
PBSW
PBSWG
PVTH0
WKETA
PUA
PETA0
TNOM
NCH
K2
W0
DVT1W

=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=

2.885735E-9
-1E-8
-0.0948017
2.4E-4
2.665034E-3
1.746064
-0.1
3.672074E-8
7
-1.5
0.022
-5.6E-11
1
0
0
2
8.58E-10
0.8
0.8
0.8
-5.105777E-3
-5.071892E-3
-4.48232E-11
1E-4

LINT
DWG
NFACTOR
CDSCD
ETAB
PDIBLC1
DROUT
PVAG
MOBMOD
KT1
UA1
AT
WW
LL
LWN
XPART
CGBO
MJ
MJSW
MJSWG
PRDSW
LKETA
PUB
PKETA

=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=

1.715622E-8
2.754317E-9
2.1860065
0
6.028975E-5
0.3258185
0.9787232
0.0122755
1
-0.11
4.31E-9
3.3E4
0
0
1
0.5
1E-12
0.3726161
0.1369758
0.1369758
-1.1011726
5.324922E-4
5.018589E-24
-2.090695E-3

27
4.1589E17
0.0219717
1E-6
0

LEVEL
TOX
VTH0
K3
NLX
DVT2W

=
=
=
=
=
=

49
4.1E-9
-0.3823437
0.1576753
1.104212E-7
0

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+DVT0
+U0
+UC
+AGS
+KETA
+RDSW
+WR
+XL
+DWB
+CIT
+CDSCB
+DSUB
+PDIBLC2
+PSCBE1
+DELTA
+PRT
+KT1L
+UB1
+WL
+WWN
+LLN
+LWL
+CGDO
+CJ
+CJSW
+CJSWG
+CF
+PK2
+PU0
+PVSAT
*

=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=

0.6234839
109.4682454
-1E-10
0.3115024
0.0298609
199.1594405
1
0
-2.481453E-9
0
0
1.215087E-5
-1E-5
7.999986E10
0.01
0
0
-7.61E-18
0
1
1
0
7.82E-10
1.214428E-3
2.165642E-10
4.22E-10
0
1.095907E-3
-1.0674346
50

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DVT1
UA
VSAT
B0
A1
PRWG
WINT
XW
VOFF
CDSC
ETA0
PCLM
PDIBLCB
PSCBE2
RSH
UTE
KT2
UC1
WLN
WWL
LW
CAPMOD
CGSO
PB
PBSW
PBSWG
PVTH0
WKETA
PUA
PETA0

=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=

0.2479255
1.31646E-9
1.054892E5
4.729297E-7
0.3886886
0.5
0
-1E-8
-0.0935653
2.4E-4
3.515392E-4
0.96422
-1E-3
8.271897E-10
8.1
-1.5
0.022
-5.6E-11
1
0
0
2
7.82E-10
0.8461606
0.8
0.8
5.167913E-4
0.0133232
-4.30826E-11
1E-4

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DVT2
UB
A0
B1
A2
PRWB
LINT
DWG
NFACTOR
CDSCD
ETAB
PDIBLC1
DROUT
PVAG
MOBMOD
KT1
UA1
AT
WW
LL
LWN
XPART
CGBO
MJ
MJSW
MJSWG
PRDSW
LKETA
PUB
PKETA

=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=

0.1
1E-21
1.5796859
1.446715E-6
0.4010376
-0.4947034
2.93948E-8
-1.998034E-8
2
0
-4.804338E-4
3.026627E-3
1.117016E-4
0.0190118
1
-0.11
4.31E-9
3.3E4
0
0
1
0.5
1E-12
0.4192076
0.3202874
0.3202874
9.5068821
-3.648003E-3
1E-21
-1.822724E-3

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