DATA SHEET DATA SHEET

SILICON TRANSISTOR

2SC3841
UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

DESCRIPTION
The 2SC3841 is an NPN silicon epitaxial transistor intended for use as UHF oscillators and a UHF mixer in a tuner of a TV receiver. The device features stable oscillation and small frequency drift against any change of the supply voltage and the ambient temperature. It is designed for use in small type equipments especially recommendd for Hybried Integrated Circuit and other applications.
PACKAGE DIMENSIONS (Units: mm)
2.80.2

0.4 0.05

+0.1

1.5

0.65 0.15

+0.1

0.95 0.95

FEATURES
High Gain Bandwidth Procuct; fT = 4.0 GHz TYP. Low Collector to Base Time Constant; CC
rbb = 4.0 ps TYP. Low Output Capacitance; Cob = 1.5 pF MAX.

2.90.2

ABSOLUTE MAXIMUM RATINGS (TA = 25
C)

Maximum Voltages and Current Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Maximum Power Dissipation Total Power Dissipation Maximum Power Temperutures Junction Temperature Storage Temperature
0.3

Marking

PT Tj Tstg

200 150 to +150

mW

C
C

PIN CONNECTIONS 1. Emitter 2. Base 3. Collector

55

ELECTRICAL CHARACTERISTICS (TA = 25
C)

CHARACTERISTIC Collector Cutoff Current DC Current Gain Collector Saturation Voltage Gain Bandwidth Product Output Capacitance Collector to Base Time Constatnt SYMBOL ICBO hFE VCE(sat) fT Cob CC
rbb 2.5 40 100 0.09 4.0 0.85 4.0 1.5 10.0 MIN. TYP. MAX. 0.1 200 0.5 V GHz pF ps UNIT TEST CONDITIONS VCB = 10 V, IE = 0 VCE = 10 V, IC = 5.0 mA IC = 10 mA, IB = 1.0 mA VCE = 10 V, IE =
5.0 mA VCB = 10 V, IE = 0, f = 1.0 MHz VCE = 10 V, IE =
5.0 mA, f = 31.9 MHz

A

hFE Classification
Class Marking hFE T62/P * T62 40 to 80 T63/Q * T63 60 to 120 T64/R * T64 100 to 200 * Old Specification / New Specification

Document No. P10362EJ1V1DS00 (1st edition) Date Published March 1997 N Printed in Japan

0 to 0.1

VCBO VCEO VEBO IC

25 12 3 30

V V V mA

1.1 to 1.4

0.16 0.06

+0.1

0.4 0.05

+0.1

1986

2SC3841
TYPICAL CHARACTERISTICS (TA = 25
C)
DC CURRENT GAIN vs. COLLECTOR CURRENT 200 100 VCE = 10 V COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = 10 V

70 50

IC-Collector Current-mA
0.1 0.2 0.5 1 2 5 10 20 40 IC-Collector Current-mA

hFE-DC Current Gain

20 10 5 2 1 0.5

50 20 10 5 0.05

0.6

0.7

0.8

0.9

VBE-Base to Emitter Voltage-V

GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 7 5 VCE = 10 V 15

INSERTION GAIN vs. COLLECTOR CURRENT VCE = 10 V f = 1.0 GHz

fT-Gain Bandwidth Product-GHz

|S21e|2-Insertion Gain-dB
1 2 5 10 20 40

10

0.5

0.2 0.1 0.5 0 0.5

10

20

40

IC-Collector Current-mA

IC-Collector Current-mA CC.rb'b vs. COLLECTOR CURRENT 10 8 6 4 2 VCE = 10 V IE = 50 mA f = 39.1 MHz

f = 1.0 MHz

Cob-Output Capacitance pF

3 2

0.5

10

20

CC.rb'b-Collector to Base Time Constant-ps

OUTPUT CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE

0.5

10

20

40

VCB-Collector to Base Voltage-V

IC-Collector Current-mA

2SC3841

S-PARAMETER

VCE = 10 V, IC = 5 mA, ZO = 50

f (MHz) 50 100 200 300 400 500 600 700 800 900 1000 1100 1200

S11

1.047 0.944 0.750 0.562 0.468 0.394 0.372 0.359 0.343 0.339 0.320 0.339 0.351

 S11
3

S21

14.240 13.693 10.802 8.270 6.449 5.399 4.421 3.824 3.388 3.020 2.692 2.483 2.291

 S21 178
164 137 118 105 97 89 83 77 73 67 64 61

S12

0.003 0.026 0.058 0.078 0.091 0.106 0.120 0.133 0.146 0.158 0.172 0.188 0.204

 S12
42 81 66 59 58 58 59 59 58 59 59 59 59

S22

1.012 0.989 0.759 0.582 0.484 0.417 0.343 0.309 0.288 0.292 0.279 0.279 0.279

 S22
3

18 56 84 106 123 138 150 164 172

178 170 168

10 30 39 40 45 44 48 53 54 61 57 61

2SC3841
S-PARAMETER
S11e, S22e-FREQUENCY CONDITION VCE = 10 V, IC = 5 mA, ZO = 50
0.10 0.40 110
0.7

THS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.0 GENE 0.01 7 0.48 3 RA 0.4 0.02 RD LOADLECTION COEF WA F FCIENT 0.4 0.0TOR 6 IN DE 7 .03THS TO GLE OF RE 0 G 4 GRE AN 0.4 0.4 ES LEN160 0 4 E 6 0 .0 0.0 AV 5 W 15 0.4 5 0.4 5 50 0 1 5 0.0 0. 4 0 POS .4 6 0.1 NT 14 0.4 6 0 0 E ITIV 40 ON 0 ER 4 MP 0. 1 EA CO C

5 0.

07 0. 3 4 0. 0 13

1.6

8 0.0 2 0.4 20 1

0.9

1.0

0.8

1.2

9 0.0 1 0.4

0.11 0.39 100

0.12 0.38

0.13 0.37

90

0.14 0.36 80

0.15 0.35

70
1.4

0.1 6 0.3 4

6 00
1.8

0.1 0.3 7 3
0.
2.0

0.2

50

0. 18 32

0.6

19 0. 31 0.

( Z+JXTANCE CO ) MPO

T EN

0.4

0 0.2 0 0.3

40

WAVELE NG

0 1.

0.2

0.3

0.4

0.5

0.6

0.7 0.8

0.9 1.0

1.2

1.4

1.6

1.8 2.0

3.0

4.0

5.0

10

20

0.1

0.4

S22
0.6

0.2

1.2 GHz 8 0. S11

0.6

0.2 GHz
5.0
4.0

E NC TA X AC J O RE Z

0.3

0.

E IV AT

0.2 GHz
0. 32 18 0.
1.6

0.

2.0

0.6

0.8

S21e-FREQUENCY CONDITION VCE = 10 V, IC = 5 mA 90 120 60

S12e-FREQUENCY CONDITION VCE = 10 V, IC = 5 mA 90 120 S12 60 1.2 GHz 30

150

S21 0.2 GHz

30

150

0.1 GHz 1.2 GHz 180 0.05 GHz 4 8 12 16 0 180 20 0.1 GHz

150

30

150

120 90

60

120 90

3 0.3 7

0.9

1.2

1.0

0.1

1.4

0.7

1.8

3.

4 0.3 6 0.1

0.35 0.15

70

0.36 0.14 80

1.0

1.

0.1 GHz
0.2 8 0.2 2 20

20

50

REACTANCE COMPONENT R 0.2 ZO

10

0.8

0.37 0.13

0.4

0.4

1.2 GHz

0.8

0.6

0.2

0.2

90

0.38 0.12

0.39 0.11 100

0.40 0.10 11 0

0.4 1 0.0 0.4 9 0.0 2 20 8

NE G

0. 4 0. 3 07 30

0.

0.6

3.
0.8

1 0.2 9 0.2 30

0.3

4.0

0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20

1.0
6.0

0.2

10

0.05 GHz 20
50

0.1

0.25 0.25

0.1 GHz
10
0.27 0.23

0
0 .29 0.2 1 0.3 3 0.2 0 0 0

0.26 0.24

4 0

0. 0. 31 19

0.2 GHz 0.05 GHz 0.05 0.11 0.15 0 0.2 0.25

30

60

2SC3841
[MEMO]

2SC3841
[MEMO]

2SC3841
[MEMO]

2SC3841

No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.
M4 96. 5