Ultra Low Current dc Characterization of

MOSFETs at the Wafer Level

Application Note 4156-1

HP 4156B Precision
Semiconductor Parameter
Analyzer

1
Introduction
Safe operation of next-generation
sub-micron devices requires that
power dissipation and signal levels
be scaled accordingly. To success-
fully characterize these devices
and semiconductor processes,
more precise and noise free low
current measurements are needed.
The HP 4156B precision semicon-
ductor parameter analyzer allows
you to measure down to the fA
level. This application note shows
how to precisely evaluate sub-
threshold characteristics of a
MOSFET device using the HP
4156B's ultra low current measure-
ment capability.
Current Problems
Accurate low current measure-
ments on a wafer are difficult be-
cause of the following reasons:
Leakage and electric noise in
the measurement cables and in-
terface between the measure-
ment instrument and wafer
prober
Leakage and electric noise at
the interconnect wires and
probe needles due to insuffi-
cient guarding and the effects of
light due to incomplete shield-
ing of the wafer
Due to these limitations, you have
to design special parametric test
elements. For example, in the
measurement of oxide leakage
current, you may have to design
test elements that have larger ar-
eas to minimize the effect of leak-
age and noise.
But these "scaled-up" test elements
waste valuable wafer layout area.
There is also the question of how
valid the data taken on large test
elements is for your actual "scaled-
down" process.
With the HP 4156B, you can meas-
ure with confidence, the actual
MOSFET devices without develop-
ing special higher current test
elements.
Measurements using the
HP 4156B
The HP 4156B and Cascade Micro-
tech's Summit series analytical wa-
fer prober together provide you
with a solution for fast measure-
ment throughput at these very low
current levels.
HP 4156B's A to D converter
and guard design of the meas-
urement system is newly de-
signed resulting in revolutionary
improvements in resolution and
accuracy. The HP 4156B has 1
fA resolution and 20 fA offset.
Each of 4 SMUs has the same
resolution and accuracy. You
are free from worrying about
cable connections according to
the pin assignment of your
devices.
The measurement cables are
also re-designed by reviewing
the materials and forms. Kelvin
Triaxial Cable (Patent) mini-
Figure 1. Connector Plate on the Rear Side of The Summit 10500
2
mizes electric noise and leak-
age. Moreover, it reduces the
effect of electromotive force
(emf) in the cable.
The Zero Offset function and
Self Calibration function reduce
the offset current and offset
voltage in the measurement sys-
tem including the measurement
cables and probes. Now you can
perform ultra low current test
by eliminating errors caused by
thermal and emf effects.
The Summit series prober was
designed to mate with the HP
4156B. All measurement paths
are fully guarded and shielded,
including the wafer chuck (sub-
strate) connection. You can
measure surface and bulk leak-
ages to the full potential of the
HP 4156B.
Measurement Instruments and
Connection
The HP 4156B kelvin-triaxial ca-
bles can be connected directly to
the optional connector plate of the
Summit prober.
You are not have to solder meas-
urement wires to the connector
plate, so there will be no flux and
 D r a in ME A S U R E :
C MI
S WE E P
S u mmi t 9 5 0 0
SETUP
I d - Vg Me a s . I DVG4 . DAT
9 4 J UN0 6 0 6 : 5 0 PM

* VARI ABL E VAR1 V A R2

Ga te Su b s tra te UNI T S MU 2 : H R
N A ME Vg
S WE E P MOD E SI NGL E

So u rc e L I N / L OG L I NEAR

SMU2 SMU4 SMU1 ST ART

ST OP
- 1 . 0 0 0 0
4 . 0 0 0 V
V

ST EP 5 0 . 0 mV
SMU3 NO OF ST EP 1 0 1
A Id C OMP L I A N C E 1 0 0 . 0 0 mA

Vg Vs u b P O WE R C OMP OF F

Vd * T I MI N G
HOL D T I ME 5 . 0 0 s
DEL AY T I ME 0 . 0 0 0 0 s * S WE E P CONT I NUE AT ANY St a t u s
* CON S T A NT
UNI T S MU 1 : H R S MU3 : H R S MU 4 : H R
N A ME Vd Vs b Vs
MOD E V V V
S OU RCE 3 . 0 0 0 V 0 . 0 0 0 0 V 0 . 0 0 0 0 V - - - - - - - - -
C OMP L I A N C E 1 0 0 . 0 0 mA 1 0 0 . 0 0 mA 1 0 0 . 0 0 mA - - - - - - - - -

Figure 2. Measurement Block Diagram Figure 3. SWEEP SETUP Page

S Y S T E M: S E L F - CA L I B RA T I ON/ DI A GN OS T I CS 9 4 J UN0 6 0 6 : 5 3 PM
ME A S U R E : ME A S U R E SET UP 9 4 J UN0 6 0 6 : 4 9 PM
C MI S u mmi t 9 5 0 0 I d - Vg Me a s . I DV G4 . DA T
* CAL I B/ DI AG CA L I B * AUT O CA L I B ON
* ME A S U R E ME N T RA NGE
UNI T N A ME RA NGE Z ERO CANCEL ON * C A T E GOR Y ME A S UNI T
S MU 1 : H R I d L I MI T E D 1 0 p A ON [ 1 0 p A]
S MU 2 : H R I g L I MI T E D 1 0 p A ON [ 1 0 p A] S T AT US E RR OR T A RGE T
S MU 3 : H R I s b L I MI T E D 1 0 p A ON [ 1 0 p A] PASS 1 1 1 ( SEL F) AL L
S MU 4 : H R I s L I MI T E D 1 0 p A ON [ 1 0 p A] PASS 1 0 0 ( SEL F) V S U 1 , 2 / V MU 1 , 2
PASS 1 0 1 ( SEL F) S MU 1
PASS 1 0 2 ( SEL F) S MU 2
PASS 1 0 3 ( SEL F) S MU 3
PASS 1 0 4 ( SEL F) S MU 4
( * : Ol d d a t a i s u s e d . ) PASS 1 0 5 ( SEL F) S MU 5
* I NT EG T I ME PASS 1 0 7 ( SEL F) P GU1 , 2
T I ME NPL C PASS 1 0 8 ( SEL F) GN DU
S H ORT 8 0 u s 0 . 0 0 4 PASS 1 0 9 ( SEL F) ADC
ME D 2 0 . 0 ms 1
L ONG @ 3 2 0 . ms 1 6

* WA I T T I ME
1 * ( DEF AUL T WA I T T I ME )

Figure 4. MEASURE SETUP Page Figure 5. CALIBRATION/DIAGNOSTICS Page

fingerprints that increase leakage residual cable or probe sweeps to allow for initial charg-
(Figure 1). capacitances. ing time constants. Increase the
Delay Time between each point in
It is recommended to use 1.5 m To perform accurate ultra low cur- the sweep as needed to account
kelvin triaxial cables (option) to rent measurements, use the meas- for the effects of dielectric absorp-
connect the HP 4156B and the urement conditions recommended tion from residual ground or guard
prober. Shorter measurement ca- in the MEASURE SETUP page capacitances.
ble has less leakage and noise. shown in Figure 4.
The measurement environment
Measurement of Threshold In this page, the measurement should be considered as well.
Characteristics of an n-channel range should be set to Auto range
MOSFET or Limited Auto 10 pA range. The Turn off any sources of me-
10 pA range is the minimum range chanical vibration
The measurement block diagram and has 1 fA resolution. Also the Turn off all electric instruments
and measurement setup for the measurement integration time is except for the HP 4156B
measurement of the threshold set to Medium or Long to prevent Keep room temperature and hu-
characteristics of an n-channel the effect of electric noise. midity stable
MOSFET are shown in Figure 2 This minimizes external noise and
and Figure 3. The sweep step in- On SWEEP SETUP page, you will thermal induced offset currents in
terval is kept small to reduce need to add a Hold Time at the be- the SMU circuitry.
charging currents caused by any ginning of non-zero voltage

3
 For more information about Hewlett-
GRA P H/ L I S T : GRA P HI CS L ON G 9 4 J UN0 6 0 6 : 4 9 PM Packard test and measurement products,
C M I S u m m i t 9 5 0 0 I d - V g M e a s . I D V G 4 . D A T applications, services, and for a current
sales office listing, visit our web site:
http://www.hp.com/go/tmdir
M A R K E R ( - 5 0 0 mV 6 f A )

( A ) You can also contact one of the following

1 0 0 . m
centers and ask for a test and
measurement sales representative.

United States:
I d Hewlett-Packard Company
Test and Measurement Call Center
P.O. Box 4026
Englewood, CO 80155-4026
d e c a d e (tel) 1 800 452 4844
/ d i v

Canada:
Hewlett-Packard Canada Ltd.
5150 Spectrum Way
Mississauga, Ontario
L4W 5G1
(tel) (905) 206 4725
o
1 f Europe:
- 1 . 0 0 V g ( V ) 5 0 0 . m / d i v 5 . 0 0 Hewlett-Packard Company
European Marketing Centre
P.O. Box 999
Figure 6. Subthreshold Characteristics of a MOSFET 1180 AZ Amstelveen
The Netherlands
(tel) (31 20) 547 9900
Before making measurements, it is teristics of a MOSFET to fA
recommended that you perform current levels. Japan:
the self calibration and Zero Can- Hewlett-Packard Japan Ltd.
Measurement Assistance Center
cel. Connect measurement cables Conclusion 9-1, Takakura-Cho, Hachioji-Shi,
to the probes. Be sure that all Tokyo 192, Japan
measurement conditions are set The HP 4156B can perform ultra (tel) (81) 426 56 7832
(fax) (81) 426 56 7840
and that the probes are up and off low current measurements that
the wafer. Perform the self calibra- are critical to evaluating future Latin America:
semiconductor devices. Leakage Hewlett-Packard Company
tion, using the Latin American Region Headquarters
CALIBRATION/DIAGNOSTICS current of oxides, substrate cur- 5200 Blue Lagoon Drive
page shown in Figure 5. rent of MOSFETs, reverse biased 9th Floor
characteristics of diodes, and Miami, Florida 33126
Next go to the GRAPHICS page, U.S.A.
Gummel plot of bipolar transistors (tel) (305) 267 4245/4220
push the green key, then push the can be measured accurately. Each (fax) (305) 267 4288
Stop key to perform the Zero of four SMUs has the same resolu-
Australia/New Zealand:
Cancel. tion and accuracy. You can per- Hewlett-Packard Australia Ltd.
form low current measurement 31-41 Joseph Street
This procedure should be done af- Blackburn, Victoria 3130
without sacrificing flexibility.
ter the HP 4156B has been turned Australia
Moreover, you don't have to sacri- (tel) 1 800 629 485 (Australia)
on for 30 minutes warming up and
fice device performance due to (tel) 0 800 738 378 (New Zealand)
right before the measurements. If (fax) (61 3) 9210 5489
scaled-up test structures. You can
you change cables or probes, you
now evaluate the devices of same Asia Pacific:
need to wait for a few minutes un-
geometry used in the final ULSI Hewlett-Packard Asia Pacific Ltd
til the offset current generated by 17-21/F Shell Tower, Times Square,
chip.
emf or friction subsides to negligi- 1 Matheson Street, Causeway Bay,
Hong Kong
ble values. (tel) (852) 2599 7777
(fax) (852) 2506 9285
Measurement Result
 Hewlett-Packard Company 1998
Figure 6 shows measurement re- Data subject to change
Printed in Japan 1/1998
sults of the subthreshold charac- 5963-2014E