EC2612

40GHz Super Low Noise PHEMT

Pseudomorphic High Electron Mobility Transistor
Chip size : 0.63 x 0.37 x 0.1 mm

Description
The EC2612 is based on a 0.15m gate
pseudomorphic high electron mobility
transistor (0.15m PHEMT) technology.
Gate width is 120m and the 0.15m
T-shaped aluminium gate features low
resistance and excellent reliability.
The device shows a very high
transconductance which leads to very high
frequency and low noise performances.
It is available in chip form with sources via
holes connection.Only gate and drain wires
bounding are required.

Main Features
D: Drain
G: Gate
S: Source

0.8dB minimum noise figure @ 18GHz

1.5dB minimum noise figure @ 40GHz
12dB associated gain @ 18GHz
9.5dB associated gain @ 40GHz

Main Characteristics
Tamb = +25C
Symbol
Idss
NFmin
Ga

Parameter
Saturated drain current

Min

Typ

Max

Unit

10

40

60

mA

1.5

1.9

dB

Minimum noise figure (F=40GHz)

Associated gain (F=40GHz)

9.5

dB

ESD Protections: Electrostatic discharge sensitive device observe handling precautions!

Electrical Characteristics
Tamb = +25C
Ref. : DSEC26120077 -17-Marc-00

1/8

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Dpartementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

40GHz Super Low Noise PHEMT

EC2612
Symbol
Idss

Test
Conditions

Parameter
Saturated drain current

Min

Typ

Max

Unit

Vds = 2V
Vgs = 0V

10

35

60

mA

-0.3

Vp

Pinch off voltage

Vds = 2V
Ids = 0.1mA

-1.0

-0.7

Gm

Transconductance

Vds = 2V
Ids = 25mA

50

70

Igsd

Gate to source/drain leakage

current

Vgsd = -2V

mS

Typ.

Max

Unit

F= 12GHz

0.5

0.7

dB

F= 30GHz

1.3

1.7

Vds=2V

F= 40GHz

1.5

1.9

Ids=Idss/3

F= 12GHz

13

14

F= 30GHz

10

F= 40GHz

9.5

Dynamic characteristics
Tamb=25C
Symbol

NF

Test
Conditions

Parameter

Minimum noise figure

Ga

Associated Gain

Min

dB
dB

dB

Absolute Maximum Ratings (1)

Tamb = +25C
Symbol

Parameter

Values

Units

Vds

Drain to source voltage

3.5

Vgs

Gate to source voltage

-2.5

Pt

Total power dissipation

280

mW

Tch

Operating channel temperature

+175

Tstg

Storage temperature range

-55 to +175

(1) Operation of this device above any one of these parameters may cause permanent damage

Ref. : DSEC26120077 -17-Marc-00

2/8

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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Specifications subject to change without notice

40GHz Super Low Noise PHEMT

EC2612

Typical Scattering Parameters

Tamb = +25C
"S" Parameters, including Lg=Ld~0.15nH
Vds = 3V, Ids = 30mA
Freq.
GHz
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40

S11
dB
-0,14
-0,19
-0,35
-0,62
-0,89
-1,12
-1,39
-1,70
-1,96
-2,15
-2,34
-2,47
-2,62
-2,78
-2,91
-3,00
-3,05
-3,08
-3,13
-3,17
-3,24
-3,26
-3,30
-3,27
-3,26
-3,20
-3,17
-3,15
-3,19
-3,15
-3,10
-3,03
-2,99
-2,98
-2,97
-2,89
-2,85
-2,83
-2,82
-2,83

S11
/
-11,0
-21,6
-32,3
-42,5
-52,5
-62,2
-71,9
-80,5
-88,2
-95,9
-104,1
-111,8
-118,7
-125,5
-132,8
-138,8
-144,2
-150,1
-156,5
-161,6
-166,5
-171,9
-176,7
179,3
175,8
172,0
167,4
163,5
159,2
155,1
151,2
147,7
144,1
139,8
136,5
132,3
128,2
124,9
121,6
116,9

S12
dB
-34,26
-28,41
-25,12
-22,92
-21,36
-20,14
-19,30
-18,69
-18,10
-17,61
-17,23
-16,88
-16,56
-16,35
-16,23
-16,11
-15,89
-15,79
-15,82
-15,77
-15,80
-15,90
-16,00
-15,96
-16,06
-16,12
-16,14
-16,16
-16,36
-16,39
-16,29
-16,37
-16,54
-16,62
-16,74
-16,88
-16,84
-16,86
-17,04
-17,11

S12
/
81,5
76,1
70,0
64,0
58,1
52,2
46,4
42,0
38,0
33,5
29,4
25,8
22,1
18,7
15,4
12,9
10,0
6,7
4,1
1,5
-2,0
-4,8
-6,9
-9,8
-12,6
-14,9
-17,2
-20,0
-22,2
-23,1
-24,9
-27,5
-28,8
-30,6
-32,6
-34,5
-36,4
-39,7
-43,4
-46,0

S21
dB
15,88
15,69
15,48
15,20
14,87
14,53
14,16
13,74
13,34
12,96
12,57
12,23
11,83
11,40
11,02
10,60
10,24
9,86
9,49
9,14
8,75
8,40
8,02
7,68
7,39
7,12
6,86
6,62
6,28
5,98
5,70
5,40
5,12
4,89
4,68
4,51
4,24
4,04
3,84
3,47

S21
/
169,7
162,2
154,5
146,7
139,3
132,3
125,7
119,5
113,9
108,3
103,0
97,6
92,4
87,4
82,5
78,1
73,7
69,5
65,2
61,2
57,2
53,3
50,0
46,8
43,6
40,4
37,1
33,4
29,7
26,5
23,1
19,5
16,7
13,4
10,1
6,4
3,0
-0,7
-4,4
-8,6

S22
dB
-4,78
-4,89
-5,11
-5,39
-5,80
-6,19
-6,67
-7,07
-7,38
-7,69
-8,04
-8,30
-8,55
-8,85
-9,03
-9,20
-9,29
-9,28
-9,34
-9,38
-9,45
-9,47
-9,50
-9,43
-9,31
-9,20
-9,13
-9,06
-8,95
-8,81
-8,67
-8,59
-8,45
-8,38
-8,34
-8,26
-8,10
-7,89
-7,77
-7,71

S22
/
-8,8
-18,3
-27,2
-36,0
-44,4
-53,5
-61,5
-68,5
-75,6
-83,2
-90,1
-96,9
-104,7
-111,9
-118,3
-123,8
-130,8
-137,3
-143,2
-148,9
-155,9
-160,6
-164,8
-169,2
-174,6
-177,9
177,8
173,5
168,4
166,0
161,3
155,5
152,7
150,0
145,6
141,4
138,3
133,7
129,7
127,3

Tamb = +25C
Ref. : DSEC26120077 -17-Marc-00

3/8

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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Specifications subject to change without notice

40GHz Super Low Noise PHEMT

EC2612
"S" Parameters, including Lg=Ld~0.15nH
Vds = 2V, Ids = 10mA
Freq.
GHz
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40

S11
dB
-0,11
-0,26
-0,45
-0,66
-0,85
-1,03
-1,20
-1,41
-1,64
-1,85
-2,04
-2,19
-2,35
-2,51
-2,66
-2,78
-2,86
-2,92
-3,00
-3,08
-3,15
-3,20
-3,23
-3,25
-3,26
-3,27
-3,27
-3,26
-3,25
-3,21
-3,18
-3,13
-3,09
-3,07
-3,03
-3,00
-2,98
-2,97
-2,94
-2,93

S11
/
-10,5
-20,7
-29,8
-38,4
-47,7
-56,5
-65,7
-73,9
-81,2
-88,7
-96,7
-104,2
-111,0
-117,8
-125,3
-131,4
-136,9
-142,9
-149,4
-154,6
-159,8
-165,3
-170,4
-174,7
-178,3
177,7
173,0
169,0
164,6
160,2
156,1
152,5
148,6
144,3
140,9
136,6
132,1
128,6
125,3
120,6

Ref. : DSEC26120077 -17-Marc-00

S12
dB
-33,67
-27,77
-24,45
-22,20
-20,57
-19,27
-18,36
-17,68
-17,04
-16,49
-16,08
-15,69
-15,33
-15,09
-14,94
-14,82
-14,57
-14,47
-14,48
-14,41
-14,41
-14,50
-14,60
-14,56
-14,65
-14,71
-14,72
-14,74
-14,93
-15,00
-14,93
-15,01
-15,21
-15,27
-15,31
-15,48
-15,49
-15,53
-15,77
-15,86

S12
/
82,3
77,0
71,2
65,4
59,6
53,7
47,9
43,3
39,2
34,5
30,1
26,3
22,3
18,5
14,9
12,0
8,9
5,3
2,3
-0,5
-4,3
-7,5
-9,8
-12,9
-16,0
-18,5
-21,1
-24,0
-26,6
-27,9
-30,1
-33,0
-34,6
-36,7
-39,8
-42,0
-44,1
-47,7
-50,7
-53,4

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S21
dB
13,52
13,38
13,22
13,01
12,74
12,48
12,19
11,85
11,51
11,19
10,85
10,56
10,22
9,82
9,49
9,12
8,78
8,43
8,08
7,76
7,40
7,07
6,72
6,38
6,10
5,83
5,57
5,34
5,03
4,73
4,47
4,18
3,91
3,69
3,49
3,33
3,07
2,89
2,67
2,33

S21
/
170,6
163,7
156,4
149,0
141,8
135,0
128,5
122,4
116,7
111,0
105,6
100,1
94,7
89,6
84,5
79,9
75,2
70,9
66,4
62,2
58,0
54,0
50,4
47,1
43,6
40,3
36,8
33,1
29,3
26,0
22,4
18,6
15,8
12,3
9,0
5,2
1,7
-2,2
-6,0
-10,2

S22
dB
-4,76
-4,81
-4,99
-5,21
-5,56
-5,88
-6,29
-6,65
-6,91
-7,19
-7,53
-7,78
-8,03
-8,34
-8,49
-8,67
-8,82
-8,91
-9,02
-9,07
-9,18
-9,27
-9,29
-9,27
-9,22
-9,16
-9,08
-9,05
-8,91
-8,80
-8,67
-8,58
-8,49
-8,39
-8,30
-8,20
-8,08
-7,95
-7,86
-7,78

S22
/
-7,4
-16,4
-24,5
-32,6
-40,5
-49,0
-56,6
-63,3
-70,0
-77,4
-84,0
-90,6
-98,0
-105,2
-111,6
-117,1
-124,0
-130,5
-136,3
-141,9
-149,1
-154,0
-158,4
-162,8
-168,4
-171,9
-176,3
179,2
174,0
171,5
166,5
160,6
157,5
154,9
151,3
146,8
143,3
138,6
133,6
131,3

Specifications subject to change without notice

40GHz Super Low Noise PHEMT

EC2612

Typical results
Tamb = +25C
Ids vs Vds (Vgs=-0.2V/Step)
70
Vgs=0.4V
60

Ids (mA)

50
40
30
20
10
0
0

0,5

1,5

2,5

3,5

Vds (V)

1,00

16

0,90

15

0,80

14

0,70

13

0,60

12

0,50

11

0,40

Ga (dB)

NF (dB)

Nf and Associated Gain Vs Ids (F=12GHz)

10
4

14

19

24

29

34

39

Ids (mA)

Vds = 2V

2,40

10

2,20

9,5

2,00

1,80

8,5

1,60

1,40

7,5

1,20

Ga (dB)

NF (dB)

NF and Associated Gain vs Ids (F=40GHz)

7
0

10

15

20

25

30

35

40

Ids (mA)

Vds=2V
Ref. : DSEC26120077 -17-Marc-00

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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Specifications subject to change without notice

40GHz Super Low Noise PHEMT

EC2612

1,60

26

1,40

23

1,20

20

1,00

17

0,80

14

0,60

11

0,40

0,20

Ga (dB)

NF (dB)

NF and Associated Gain vs F (Ids=Idss/3)

5
5

10

15

20

25

30

35

40

Frequency (GHz)

Vds=2V
F=12GHz
50,

15,00

40,

14,00
30,
13,00
20,
12,00
10,

11,00
10,00
0,0

2,0

4,0

6,0

8,0

10,0

12,0

14,0

16,0

Power added efficiency

(%)

Associated gain (dB)

16,00

0,
18,0

Pout (dBm)

Vds = 3V, Ids = 31mA

Ref. : DSEC26120077 -17-Marc-00

6/8

Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Specifications subject to change without notice

40GHz Super Low Noise PHEMT

EC2612

(CHIP) Equivalent Circuit model (Drain and Gate bond wires included)

Lg

Rg

Cg d

Rd

Ld

Cg s
Vg s
Ri

Ta u
Gm

Rd s

Cds

Rs

Ls
S

backside of substrate

Parameter
Lg
Rg
Cgs
Ri
Cgd
Rs
Ls
Gm
Tau
Cds
Rds
Rd
Ld

Unit
pH
Ohms
fF
Ohms
fF
Ohms
pH
mS
ps
fF
Ohms
Ohms
pH

Value
152.54
0.13
142.6
3.2
39.57
2.83
0.11
98.14
2.8
46.84
116.8
2.83
117.01

Typical Noise Parameters at Vds=2V, Ids=14mA

(Drain and Gate bond wires included)
FREQUENCY
MHz
5000
8000
12000
15000
20000
24000
28000
30000
32000
35000
38000
40000
42000
45000

NF min
dB
0.26
0.356
0.492
0.595
0.762
0.892
1.01
1.07
1.137
1.223
1.307
1.362
1.415
1.493

Ref. : DSEC26120077 -17-Marc-00

opt
MOD.
0.811
0.746
0.658
0.598
0.514
0.473
0.460
0.465
0.475
0.5
0.533
0.556
0.581
0.618

Rn
Ang.()
19.888
32.28
49.899
64.263
91.037
114.916
139.673
151.723
163.219
179.087
-166.857
-158.467
-150.795
-140.488

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14.089
13.33
11.87
10.51
7.965
5.923
4.16
3.473
2.966
2.63
2.923
3.538
4.536
6.843

Specifications subject to change without notice

40GHz Super Low Noise PHEMT

EC2612
Chip Mechanical Data

Drain area= 60*60 m

Gate area = 60*60 m
Thickness = 100 m

Recommended die attach :

Stage temperature = 300C
(minimize temp. and time whenever
possible)
Preforms = Au/Sn (80/20)
Atmosphere : dry nitrogen or forming
gas flow

Recommended bonding :
18 m very pure gold wire
(thermal compression)
The bonder should be properly
grounded
dimensions in m

Source pads are directly connected to

back face metallization through the via
holes

Ordering Information
Chip form

: EC2612-99F/00

Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.

Ref. : DSEC26120077 -17-Marc-00

8/8

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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Specifications subject to change without notice

This datasheet has been download from:

www.datasheetcatalog.com
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