Philips Semiconductors

Product specification

Triacs

BT137 series

GENERAL DESCRIPTION
Passivated triacs in a plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching.

QUICK REFERENCE DATA

SYMBOL PARAMETER BT137BT137BT137Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. 600 600F 600G 600 8 65 MAX. 800 800 8 65 V A A UNIT

VDRM IT(RMS) ITSM

PINNING - TO220AB
PIN 1 2 3 tab DESCRIPTION main terminal 1

PIN CONFIGURATION
tab

SYMBOL

T2
main terminal 2 gate main terminal 2
1 23

T1

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Tmb 102 C full sine wave; Tj = 25 C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/s T2+ G+ T2+ GT2- GT2- G+ CONDITIONS MIN. -40 -600 6001 8 65 71 21 50 50 50 10 2 5 5 0.5 150 125 MAX. -800 800 UNIT V A A A A2s A/s A/s A/s A/s A V W W C C

I2t dIT/dt

IGM VGM PGM PG(AV) Tstg Tj

Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature

over any 20 ms period

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/s. June 2001 1 Rev 1.400

Philips Semiconductors

Product specification

Triacs

BT137 series

THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS MIN. TYP. 60 MAX. 2.0 2.4 UNIT K/W K/W K/W Thermal resistance full cycle junction to mounting base half cycle Thermal resistance in free air junction to ambient

STATIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current CONDITIONS BT137VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A IT = 10 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 C VD = VDRM(max); Tj = 125 C MIN. TYP. ... 0.25 5 8 11 30 7 16 5 7 5 1.3 0.7 0.4 0.1 35 35 35 70 30 45 30 45 20 MAX. ...F 25 25 25 70 30 45 30 45 20 1.65 1.5 0.5 ...G 50 50 50 100 45 60 45 60 40 mA mA mA mA mA mA mA mA mA V V V mA UNIT

IL

Latching current

IH VT VGT ID

Holding current On-state voltage Gate trigger voltage Off-state leakage current

DYNAMIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL dVD/dt PARAMETER Critical rate of rise of off-state voltage Critical rate of change of commutating voltage Gate controlled turn-on time CONDITIONS BT137VDM = 67% VDRM(max); Tj = 125 C; exponential waveform; gate open circuit VDM = 400 V; Tj = 95 C; IT(RMS) = 8 A; dIcom/dt = 3.6 A/ms; gate open circuit ITM = 12 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/s ... 100 MIN. ...F 50 ...G 200 TYP. 250 MAX. UNIT V/s

dVcom/dt

10

20

V/s

tgt

June 2001

Rev 1.400

Philips Semiconductors

Product specification

Triacs

BT137 series

12 10

Ptot / W

Tmb(max) / C 101 = 180 120

1

10

IT(RMS) / A

BT137

105 109

90 60 30

102 C

8 6 4 2 0

6
113

4
117 121 125 10

4 6 IT(RMS) / A

0 -50

50 Tmb / C

100

150

Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where = conduction angle.
ITSM / A IT I TSM time Tj initial = 25 C max

Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb.
IT(RMS) / A

1000

25

20

15
100 dI T /dt limit

10

T2- G+ quadrant

10 10us

100us

1ms T/s

10ms

100ms

0 0.01

0.1 1 surge duration / s

10

Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp 20ms.
ITSM / A IT T ITSM time

Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb 102C.
VGT(Tj) VGT(25 C)

80 70 60 50 40 30

1.6 1.4 1.2 1 0.8

Tj initial = 25 C max

20 10

0.6 0.4 -50

0 1

10 100 Number of cycles at 50Hz

1000

50 Tj / C

100

150

Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz.

Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25C), versus junction temperature Tj.

June 2001

Rev 1.400

Philips Semiconductors

Product specification

Triacs

BT137 series

3 2.5 2 1.5

IGT(Tj) IGT(25 C) T2+ G+ T2+ GT2- GT2- G+

25

IT / A Tj = 125 C Tj = 25 C

20

typ
Vo = 1.264 V Rs = 0.0378 Ohms

max

15

10

1
5

0.5 0 -50
0

50 Tj / C

100

150

0.5

1.5 VT / V

2.5

Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25C), versus junction temperature Tj.
IL(Tj) IL(25 C)

Fig.10. Typical and maximum on-state characteristic.

10

Zth j-mb (K/W)

3 2.5

unidirectional 1 bidirectional

2 1.5 1 0.5 0 -50

0.01 10us 0.1ms 1ms 10ms tp / s 0.1
P D

tp

50 Tj / C

100

150

0.1s

1s

10s

Fig.8. Normalised latching current IL(Tj)/ IL(25C), versus junction temperature Tj.
IH(Tj) IH(25C)

Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp.
dV/dt (V/us) off-state dV/dt limit
BT137...G SERIES BT137 SERIES

1000

3 2.5 2 1.5 1 0.5

100

BT137...F SERIES

10

dIcom/dt = 10 A/ms

7.9

6.1

4.7

3.6

2.8

0 -50

50 Tj / C

100

150

50 Tj / C

100

150

Fig.9. Normalised holding current IH(Tj)/ IH(25C), versus junction temperature Tj.

Fig.12. Typical commutation dV/dt versus junction temperature, parameter commutation dIT/dt. The triac should commutate when the dV/dt is below the value on the appropriate curve for pre-commutation dIT/dt.

June 2001

Rev 1.400

Philips Semiconductors

Product specification

Triacs

BT137 series

MECHANICAL DATA
Dimensions in mm Net Mass: 2 g

4,5 max 10,3 max

1,3

3,7 2,8
5,9 min

15,8 max

3,0 max not tinned

3,0

13,5 min
1,3 max 1 2 3 (2x)
2,54 2,54

0,9 max (3x)

0,6 2,4

Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT78 (TO220) envelopes. 2. Epoxy meets UL94 V0 at 1/8".

June 2001

Rev 1.400

Philips Semiconductors

Product specification

Triacs

BT137 series

DEFINITIONS
DATA SHEET STATUS DATA SHEET STATUS2 Objective data PRODUCT STATUS3 Development DEFINITIONS This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in ordere to improve the design and supply the best possible product This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A

Preliminary data

Qualification

Product data

Production

Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

2 Please consult the most recently issued datasheet before initiating or completing a design. 3 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. June 2001 6 Rev 1.400