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5.5 I-V characteristic of Transistor in CB configuration.

l
L
l
C
8
L
v
C8
v
L8
llg.1 C8 clrculL
8
v
C8
=-3v
l
L
(mA)
v
L8
0.6 0.7 0.8
2
v
C8
=-1v
v
C8
=-10v
llg.2 lnpuL characLerlsLlc
LecLure -10
rof.s. 8avl, hyslcs, ll1C
The common base configuration of p-n-p transistor is shown in Fig.1. Here the base is the
common terminal to both emitter and collector, moreover, the base is close to or at ground
potential
The input characteristic curves are shown in Fig.2 and it is similar to that of forward biased
diode. For increased reverse biased C-B voltage V
CB,
the offset voltage is reduced due to Early
effect. As V
CB
increases, the transition region penetrates into base region from collector
junction. This results in reduction of recombination of holes injected from emitter, thereby
increasing the emitter current.
llg.1 C8 clrculL
llg.2 lnpuL characLerlsLlc
l
C
v
C8
l
L
l
L
=8 mA
l
C
= 8mA
-20 v -10 v
SaLuraLlon
AcLlve reglon
CuLoff reglon
l
L
=1 mA
The output characteristics curves are shown in Fig.2, it relates output current I
C
with output
voltage V
CB
. Here I
C
is almost independent of V
CB.
The current increases only due to I
E
. The
plot is extended to small positive biasing collector biasing.
rof.s. 8avl, hyslcs, ll1C
plot is extended to small positive biasing collector biasing.
It has three regions namely, active region, cutoff region and saturation region. In the active
region, the current is almost constant. The transistor is mostly operated in this region. In the
cutoff region I
C
is close to zero at which I
E
is small or zero. It may be noted from the figure that
I
C
and I
E
values are comparable. The saturation region is the left of the V
CB
=0 axis, where the
current rises exponential when V
CB
is increased toward 0.
5.6 I-V characteristic of Transistor in CE configuration.
l
8
l
C
8
L
v
CL
v
8L
l
L
l
8
(A)
v
8L
0.6 0.7 0.8
20
v
CL
=-10v
v
CL
=-1v
v
CL
=-3v
100
llg.1 CL clrculL
llg.2 lnpuL characLerlsLlc
rof.s. 8avl, hyslcs, ll1C
The common emitter configuration circuit is shown in fig.1. It is the most common configuration
used in transistor amplifiers. Here, the emitter terminal is common to both collector and base
terminals.
Here the input current and output voltage are taken as independent parameters, while the input
voltage and output current are taken as dependent variables.
V
BE
= f
1
(I
B,
V
CE
) -- (1)
I
C
= f
2
(V
CE,
I
B
) -- (2)
Eq.(1) describes the family of input curves and eq.2 describes the output curves.
llg.1 CL clrculL
llg.2 lnpuL characLerlsLlc
l
C
(mA)
v
CL
l
8
=0
l
8
=10A
l
8
=20A
l
8
=30A
llg.3 CupuL characLerlsLlc
The input characteristics are shown in Fig.2, where input current I
B
is plotted against V
BE
for
different output voltages V
CE
. The curve is similar to that of CB circuit but the difference is that with
increase in magnitude of output voltage the offset voltage increases and the base current
decreases. This is mainly due to Early effect. As V
CE
(reverse bias) increases, the transition region
rof.s. 8avl, hyslcs, ll1C
decreases. This is mainly due to Early effect. As V
CE
(reverse bias) increases, the transition region
extends into the base region as a result of that the electron hole recombination and the supply of
electrons into the base region decreases and it results in reduction in I
B.
The output characteristic curves are similar to the reverse bias diode. For higher value of V
CE
linear
behaviour of I
C
is observed and it is mainly due to Early effect. For small increase in I
B,
there is a
large increase in I
C
and this behavior can be used for amplification. The output characteristics can
be understood based on following relation
-- (3) and -- (4)
From (3) and (4), --- (5)
See that I
C
is independent of V
CE
and the small linear behaviour observed is due to Early effect.
CS E C
I I I + =
C B E
I I I + =

=
1 1
B CS
C
I I
I
5.7 CC configuration of Transistor.
8
L
l
C
l
8
v
LC
v
8C
l
L
The common collector circuit as shown in Fig. is
basically similar to that of common emitter circuit
with an exception that the load resistance is in
emitter terminal rather than at collector.
When the base current is I
o
(reverse biased input ),
the emitter current will be zero and no output current
flows through the load. When the I
B
is increased I
E
increases to the active region and in this case
almost all the supply voltage appear across the
load.
CC circuit generally has large input resistance and
small output resistance in contrast to the CE circuit.
rof.s. 8avl, hyslcs, ll1C
small output resistance in contrast to the CE circuit.

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