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TFMS 5..

0
Photo Modules for PCM Remote Control Systems
Available types for different carrier frequencies
Type TFMS 5300 TFMS 5360 TFMS 5380 TFMS 5560 f0 30 kHz 36 kHz 38 kHz 56 kHz Type TFMS 5330 TFMS 5370 TFMS 5400 f0 33 kHz 36.7 kHz 40 kHz

Description
The TFMS 5..0 series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter. The demodulated output signal can directly be decoded by a microprocessor. The main benefit is the reliable function even in disturbed ambient and the protection against uncontrolled output pulses.
GND VS OUT
94 8691

Features
D Photo detector and preamplifier in one package D Output active low
(active high modules: TFMS 5..9)

D Improved shielding against electric field


disturbance

D Internal filter for PCM frequency D High immunity against ambient light

D 5 Volt supply voltage, low power consumption D TTL and CMOS compatibility D Continuous transmission possible (tpi/T 0.4)

Block Diagram
2 Input Control Circuit 100 kW 3 PIN AGC Band Pass Demodulator 1 GND OUT VS

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TELEFUNKEN Semiconductors Rev. A4, 15-Jul-96

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TFMS 5..0
Absolute Maximum Ratings
Tamb = 25_C Parameter Supply Voltage Supply Current Output Voltage Output Current Junction Temperature Storage Temperature Range Operating Temperature Range Power Consumption Soldering Temperature (Pin 2) (Pin 2) (Pin 3) (Pin 3) Test Conditions Symbol VS IS VO IO Tj Tstg Tamb Ptot Tsd Value 0.3...6.0 5 0.3...6.0 5 100 25...+85 25...+85 50 260 Unit V mA V mA C C C mW C

(Tamb 85 C) t 10 s, 1 mm from case

Basic Characteristics
Tamb = 25_C Parameter Supply Current ( pp y (Pin 2) ) Transmission Distance Output Voltage Low (Pin 3) Irradiance (30 40 kHz) Irradiance (56 kHz) Irradiance Directivity Test Conditions VS = 5 V, Ev = 0 VS = 5 V, Ev = 40 klx, sunlight Ev = 0, test signal see fig.7, IR diode TSIP5201, IF = 1.5 A IOSL = 0.5 mA,Ee = 0.7 mW/m2, f = fo, tp/T = 0.4 Pulse width tolerance: tpo=tpi160ms, test signal (see fig.7) Pulse width tolerance: tpo=tpi160ms, test signal (see fig.7) Angle of half transmission distance Symbol ISD ISH d VOSL Ee min Ee min Ee max 1/2 20 55 0.3 0.4 Min 0.4 Typ 0.5 1.0 35 Max 0.8 Unit mA mA m mV mW/m2 mW/m2 W/m2 deg

250 0.5 0.7

Application Circuit
330 W *) 2 TFM. 5..0 TSUS 5... TSIP 5... 3 4.7 mF *) >10 kW optional +5 V **)

mC

1
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GND *) only necessary to suppress power supply disturbances **) tolerated supply voltage range : 4.5 V<VS <5.5V

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TELEFUNKEN Semiconductors Rev. A4, 15-Jul-96

TFMS 5..0
Typical Characteristics (Tamb = 25_C unless otherwise specified)
Ee min Threshold Irradiance ( mW/m2 ) 1.0 E e min / E e Rel. Responsitivity ( % ) 0.8 2.0 f ( E ) = f0 1.6 1.2 0.8 0.4 0.0 0.7
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0.6

0.4 0.2 0.0 0.8 0.9 1.0 1.1 1.2 1.3 f / f0 Relative Frequency

Df ( 3 dB ) = f0 / 10

f = f0

"5%

0.0
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0.4

0.8

1.2

1.6

2.0

E Field Strength of Disturbance ( kV / m )

Figure 1. Frequency Dependence of Responsivity


1200 t po Output Pulse Length ( m s ) 1000 800 600 400 200 0 0.1
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Figure 4. Sensitivity vs. Electric Field Disturbances


100 f = f0 10 10 kHz 1 100 Hz

Input Burst Duration

l = 950 nm, Optical Test Signal, Fig.7

Ee min Threshold Irradiance ( mW/m2 )

0.1 1.0 10.0 100.0


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0.1

10

100

1000

Ee Irradiance ( mW / m2 )

DVs RMS AC Voltage on DC Supply Voltage ( mV )

Figure 2. Sensitivity in Dark Ambient


100.0 Correlation with Ambient Light Sources ( Disturbance Efect ) : 1 0W/m2 1.4 klx ( Stand.Illum.A, T = 2855 K ) 8.2 klx ( Daylight, T = 5900 K ) 10.0

Figure 5. Sensitivity vs. Supply Voltage Disturbances


1.0 0.8 Sensitivity in dark Ambient

Ee min Threshold Irradiance ( mW/m2 )

^ ^

Ee min Threshold Irradiance ( mW/m2 ) 100.0


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0.6

0.4 0.2 0.0 30

1.0 Ambient, l = 950 nm 0.1 0.01 0.1 1.0 10.0

30

60

90

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E Irradiance ( W / m2 )

Tamb Ambient Temperature ( C )

Figure 3. Sensitivity in Bright Ambient

Figure 6. Sensitivity vs. Ambient Temperature

TELEFUNKEN Semiconductors Rev. A4, 15-Jul-96

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TFMS 5..0
Ee T on ,T off - Output Pulse Length ( ms ) Optical Test Signal ( IR diode TSIP 5201, IF = 1.5 A, 30 pulses, f = f0, T = 10 ms ) 1.0 0.8 Ton 0.6 Toff

t tpi * * tpi Output Signal tpo = tpi

w 400 ms is recommended for optimal function


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0.4 0.2

VO VOH VOL

"160 ms
t

l = 950 nm, Optical Test Signal, Fig.8

0.0 0.1
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10

100

1000 )

10000

Ee Irradiance (

mW / m2

tpo

Figure 7. Output Function


Ee Optical Test Signal 1.0 I s Supply Current ( mA ) 0.8

Figure 10. Output Pulse Diagram

Vs = 5 V

600 ms T = 60 ms

600 ms

0.6

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0.4 0.2 0.0 30

VO VOH VOL

Output Signal, ( see Fig.10 )

30

60

90

Ton

Toff

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Tamb Ambient Temperature ( C )

Figure 8. Output Function

Figure 11. Supply Current vs. Ambient Temperature

Ee min Threshold Irradiance ( mW/m2 )

1.0 8 s rel Relative Responsitivity ( % ) 0.8

0.6

0.4 0.2 0.0 800

0 0.05
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0.15

0.25

0.35

0.45
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900

1000

1100

tp / T Duty Cycle

l Wavelength ( nm )

Figure 9. Sensitivity vs. Duty Cycle

Figure 12. Spectral Response

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TELEFUNKEN Semiconductors Rev. A4, 15-Jul-96

TFMS 5..0
20 30 10 0 10 20 20 10 0 10 20

fy fx

30

40

40

0.6

0.4

0.2

0.2

0.4

0.6
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0.6

0.4

0.2

0.2

0.4

0.6

drel Relative Transmission Distance

drel Relative Transmission Distance

Figure 13. Vertical Directivity y

Figure 14. Horizontal Directivity x

Dimensions in mm

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TELEFUNKEN Semiconductors Rev. A4, 15-Jul-96

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TFMS 5..0
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423

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TELEFUNKEN Semiconductors Rev. A4, 15-Jul-96