POWER PLANNING ASSIGNMENT

How power values are defined in .lib files internal_power() { related_pin : "B"; rise_power(energy_template_7x7) { index_1 ("0.008, 0.04, 0.08, 0.12, 0.16, 0.224, 0.28"); index_2 ("0.01, 0.06, 0.1, 0.15, 0.2, 0.25, 0.3"); values ( \ "0.002557, 0.002618, 0.002627, 0.002631, 0.002634, 0.002636, 0.002636", \ "0.00255, 0.002611, 0.00262, 0.002625, 0.002627, 0.002629, 0.002629", \ "0.00254, 0.002602, 0.002611, 0.002615, 0.002618, 0.00262, 0.00262", \ "0.002531, 0.002594, 0.002602, 0.002607, 0.002609, 0.002611, 0.002612", \ "0.002524, 0.002586, 0.002595, 0.0026, 0.002603, 0.002604, 0.002605", \ "0.002514, 0.002576, 0.002586, 0.002591, 0.002594, 0.002596, 0.002596", \ "0.002507, 0.00257, 0.002581, 0.002586, 0.002588, 0.00259, 0.002591"); } What are ccs models. Accurate delay calculation is critical for timing closure of complex digital designs. At 90nm and below, physical effects present new challenges for delay calculation. Top-level interconnect is becoming more resistive with narrower metal widths, resulting in cases where the interconnect impedance is much greater than the drive resistance of the driving cell. In addition, second order physical effects such as the Miller effect are now becoming first order and must be accounted for in the timing analysis. The concern over power in todays smaller technologies is also presenting new requirements for operation of all or part of the design at lower voltages, increasing the need for analysis over a range of voltages without a unique characterization for each operating point. At 90nm, max allowed slot width = 12un , process requirements is 36un to address EM/IR. What would be the right approach to address this? You need 3 straps of 12 un width to approach the process requirements of 36un
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POWER PLANNING ASSIGNMENT

For a 10K gate design with 500 MHz frequency and typical voltage of 1.2V, die size of 5mmx5mm, tr of 0.3ns, R of 30, having probability of transitions as 50% and leakage power of 20mW. Calculate Avg. power & Total power. E(sw)=50% probability of transition in a given time period therefore E(sw)=0.5 t=rc; 3ns=30*c therefore c=0.3ns/30 c=10pF Total Power is given as: cv2fE(sw) + v.imax(tr+tf/2)f+leakage power 10pf*(1.2)2*500MHz*0.5+1.2*40mA*0.3ns*500MHz+20mW Total Power = 31mW

Integrating the instantaneous power over the period of interest, the energy EVDD taken from the supply during the transition is given by EVDD= 0->I. VDD(t).VDD.dt =VDD. 0-> CL.(dvout/dt).dt = CL.VDD. 0->VDD.dvout = CL.VDD2 Average power = 10pf*(1.2)2=14.5pW What is IR Drop ? IR Drop is the problem of voltage drop of the power and ground due to high current flowing through the power-ground resistive network.

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