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January 2001 Advance Information

AS7C256 AS7C3256
5V/3.3V 32K X 8 CMOS SRAM (Common I/O)

Features
AS7C256 (5V version) AS7C3256 (3.3V version) Industrial and commercial temperature Organization: 262,144 words 16 bits High speed
- 12/15/20 ns address access time - 5/6/7/9 ns output enable access time - 7.2 mW (AS7C3256) / max CMOS I/O

2.0V data retention Easy memory expansion with CE and OE inputs TTL-compatible, three-state I/O 28-pin JEDEC standard packages
- 300 mil PDIP - 300 mil SOJ - 8 13.4 TSOP

Very low power consumption: ACTIVE


- 660mW (AS7C256) / max @ 12 ns - 216mW (AS7C3256) / max @ 12 ns

ESD protection 2000 volts Latch-up current 200 mA

Very low power consumption: STANDBY


- 22 mW (AS7C256) / max CMOS I/O

Logic block diagram


VCC GND Input buffer

Pin arrangement
28-pin TSOP I (813.4) 28-pin DIP, SOJ (300 mil)

A0 A1 A2 A3 A4 A5 A6 A14

I/O7 Row decoder Sense amp 256 X 128 X 8 Array (262,144)

I/O0

OE A11 A9 A8 A13 WE VCC A14 A12 A7 A6 A5 A4 A3

1 2 3 4 5 6 7 8 9 10 11 12 13 14

(22) (23) (24) (25) (26) (27) (28) AS7C256 (1) AS7C3256 (2) (3) (4) (5) (6) (7)

(21) 28 (20) 27 (19) 26 (18) 25 (17) 24 (16) 23 (15) 22 (14) 21 (13) 20 (12) 19 (11) 18 (10) 17 (9) 16 (8) 15

A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2

Note: This part is compatible with both pin numbering conventions used by various manufacturers.
Column decoder WE Control circuit A 7 A 8 A A A A A 9 10 11 12 13 OE CE

A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND

1 2 3 4 5 6 7 8 9 10 11 12 13 14

28 27 26 25 24 23 22 21 20 19 18 17 16 15

VCC WE A13 A8 A9 A11 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3

Selection guide
AS7C256-10 AS7C3256-10 AS7C256-12 AS7C3256-12 AS7C256-15 AS7C3256-15 AS7C256-20 AS7C3256-20 Unit

Maximum address access time Maximum output enable access time Maximum operating current Maximum CMOS standby current AS7C256 AS7C3256 AS7C256 AS7C3256

10

12 5 120 60 4 2

15 6 115 55 4 2

20 7 110 50 4 2

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Copyright Alliance Semiconductor. All rights reserved.

AS7C256 AS7C3256

ns ns mA mA mA mA

AS7C256 AS7C3256

Functional description
The AS7C(3)256 is a 5V/3.3V high-performance CMOS 262,144-bit Static Random-Access Memory (SRAM) device organized as 262,144 words 16 bits. It is designed for memory applications requiring fast data access at low voltage, including PentiumTM, PowerPCTM, and portable computing. Alliances advanced circuit design and process techniques permit 3.3V operation without sacrificing performance or operating margins. . The device enters standby mode when CE is high. CMOS standby mode consumes 3.6 mW Normal operation offers 75% power reduction after initial access, resulting in significant power savings during CPU idle, suspend, and stretch mode. Both versions of the AS7C256 offer 2.0V data retention. Equal address access and cycle times (tAA, tRC, tWC) of 12/15/20 ns with output enable access times (tOE) of 5/6/7/9 ns are ideal for high-performance applications. The chip enable (CE) input permits easy memory expansion with multiple-bank memory organizations. . A write cycle is accomplished by asserting chip enable (CE) and write enable (WE) LOW Data on the input pins I/O0-I/O7 is written on the rising edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should drive I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE). A read cycle is accomplished by asserting chip enable (CE) and output enable (OE) LOW with write enable (WE) high. The , chip drives I/O pins with the data word referenced by the input address. When chip enable or output enable is high, or write enable is low, output drivers stay in high-impedance mode. All chip inputs and outputs are TTL-compatible and 5V tolerant. Operation is from a single 3.30.3V supply. The AS7C(3)256A is packaged in high volume industry standard packages.

Absolute maximum ratings


Parameter Voltage on VCC relative to GND Voltage on any pin relative to GND Power dissipation Storage temperature (plastic) Ambient temperature with VCC applied DC current into outputs (low) Device AS7C256 AS7C3256 Symbol Vt1 Vt1 Vt2 PD Tstg Tbias IOUT Min 0.5 0.5 0.5 65 55 Max +7.0 +5.0 VCC + 0.5 1.0 +150 +125 20 Unit V V V W
o o

C C

mA

Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Truth table
CE H L L L WE X H H L OE X H L X Data High Z High Z DOUT DIN Mode Standby (ISB, ISB1) Output disable (ICC) Read (ICC) Write (ICC)

Key: X = Dont care, L = Low, H = High

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AS7C256 AS7C3256

Recommended operating conditions


Parameter Supply voltage Device AS7C256 AS7C3256 AS7C256 Input voltage AS7C3256 Ambient operating temperature
* VIL min = 2.0V for pulse width less than tRC/2.

Symbol VCC VCC VIH VIH VIL TA


*

Min 4.5 3.0 2.2 2.0 -0.5 0 40


*

Typical 5.0 3.3

Max 5.5 3.6 VCC+0.5 VCC+0.5 0.8 70 85

Unit V V V V V
oC o

commercial TA industrial

DC operating characteristics (over the operating range)1


-10 Parameter Input leakage current Sym Test conditions |ILI| VCC = Max, Vin = GND to VCC Device Min Max -12 Min
AS7C256 AS7C3256 AS7C256 AS7C3256

-15 Min 2.4 Max 1 1 115 55 35 20 4.0 2.0 0.4

-20 Min 2.4 Max 1 1 110 50 30 20 4.0 2.0 0.4 mA V V mA Unit A A

Max 1 1 120 60 40 20 4.0 2.0 0.4

Output leakage V = Max, |ILO| CC current VOUT = GND to VCC Operating power supply current ICC VCC = Max, CE VIL f = fMax, IOUT = 0mA VCC = Max, CE VIL f = fMax, IOUT = 0mA

2.4

ISB Standby power supply current

mA

VCC = Max, CE > VCC0.2V AS7C256 ISB1 VIN < GND + 0.2V or AS7C3256 VIN > VCC0.2V, f = 0 VOL IOL = 8 mA, VCC = Min VOH IOH = 4 mA, VCC = Min

Output voltage

Capacitance (f = 1MHz, Ta = room temperature, VCC = NOMINAL)2


Parameter Input capacitance I/O capacitance Symbol CIN CI/O Signals A, CE, WE, OE I/O Test conditions Vin = 0V Vin = Vout = 0V Max 5 7 Unit pF pF

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AS7C256 AS7C3256

Read cycle (over the operating range)3,9


-10 Parameter Read cycle time Address access time Chip enable (CE) access time Output enable (OE) access time Output hold from address change CE LOW to output in low Z CE HIGH to output in high Z OE LOW to output in low Z OE HIGH to output in high Z Power up time Power down time Symbol tRC tAA tACE tOE tOH tCLZ tCHZ tOLZ tOHZ tPU tPD Min Max 12 3 3 0 0 -12 Min Max 12 12 5 3 3 12 15 3 3 0 0 -15 Min Max 15 15 6 4 4 15 20 3 3 0 0 -20 Min Max 20 20 7 5 5 20 Unit ns ns ns ns ns ns ns ns ns ns ns 5 4, 5 4, 5 4, 5 4, 5 4, 5 4, 5 3 3 Notes

Key to switching waveforms


Rising input Falling input Undefined output/dont care

Read waveform 1 (address controlled)3,6,7,9


tRC Address tAA Dout Data valid tOH

Read waveform 2 (CE controlled)3,6,8,9


tRC1 CE tOE OE tOLZ tACE Dout tCLZ Supply current tPU 50% Data valid tPD 50% ICC ISB tOHZ tCHZ

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AS7C256 AS7C3256

Write cycle (over the operating range)11


-10 Parameter Write cycle time Chip enable to write end Address setup to write end Address setup time Write pulse width Address hold from end of write Data valid to write end Data hold time Write enable to output in high Z Output active from write end
Shaded areas contain advance information.

-12 Min 12 8 8 0 8 0 6 0 3 Max 5 15 10 10 0 9 0 8 0 3

-15 Min Max 5 20 12 12 0 12 0 10 0 3

-20 Min Max 5 Unit ns ns ns ns ns ns ns ns ns ns 4, 5 4, 5 4, 5 Notes

Symbol tWC tCW tAW tAS tWP tAH tDW tDH tWZ tOW

Write waveform 1 (WE controlled)10,11


tWC tAW Address tWP WE tAS Din tWZ Dout tDW Data valid tOW tDH tAH

Write waveform 2 (CE controlled)10,11


tWC tAW Address tAS CE tWP WE tWZ Din Dout tDW Data valid tDH tCW tAH

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AS7C256 AS7C3256

Data retention characteristics (over the operating range)13


Parameter VCC for data retention Data retention current Symbol VDR ICCDR Test conditions VCC = 2.0V CE VCC0.2V VIN VCC0.2V or VIN 0.2V Min 2.0 0 tRC Max 500 1 Unit V A A ns ns A

Chip enable to data retention time tCDR Operation recovery time Input leakage current tR | ILI |

Data retention waveform


Data retention mode VCC
VCC VDR

2.0V

VCC

tCDR CE
VIH VDR VIH

tR

AC test conditions
Output load: see Figure B or Figure C. Input pulse level: GND to 3.0V. See Figure A. Input rise and fall times: 2 ns. See Figure A. Input and output timing reference levels: 1.5V.
+5V 480 +3.0V GND 90% 10% 2 ns 90% 10% Dout 255 C(14) Dout 350 Thevenin equivalent 168 Dout +1.72V (5V and 3.3V) +3.3V 320 C(14)

Figure A: Input pulse

GND Figure B: Output load

GND Figure C: Output load

Notes
1 2 3 4 5 6 7 8 9 10 11 12 13 14 During VCC power-up, a pull-up resistor to VCC on CE is required to meet ISB specification. This parameter is sampled, but not 100% tested. For test conditions, see AC Test Conditions, Figures A, B, C. These parameters are specified with CL = 5pF, as in Figures B or C. Transition is measured 500mV from steady-state voltage. This parameter is guaranteed, but not tested. WE is High for read cycle. CE and OE are Low for read cycle. Address valid prior to or coincident with CE transition Low. All read cycle timings are referenced from the last valid address to the first transitioning address. CE or WE must be High during address transitions. Either CE or WE asserting high terminates a write cycle. All write cycle timings are referenced from the last valid address to the first transitioning address. CE1 and CE2 have identical timing. 2V data retention applies to the commercial operating range only. C=30pF, except on High Z and Low Z parameters, where C=5pF.

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AS7C256 AS7C3256

Typical DC and AC characteristics


1.4 1.2 Normalized ICC, ISB 1.0 0.8 0.6 0.4 0.2 0.0 MIN NOMINAL Supply voltage (V) Normalized access time tAA vs. supply voltage VCC MAX ISB Normalized ICC, ISB ICC Normalized supply current ICC, ISB vs. supply voltage VCC 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 55 10 35 80 125 Ambient temperature (C) Normalized access time tAA vs. ambient temperature Ta ISB ICC Normalized supply current ICC, ISB vs. ambient temperature Ta Normalized ISB1 (log scale) 625 25 5 1 0.2 Normalized supply current ISB1 vs. ambient temperature Ta

VCC = VCC(NOMINAL)

0.04 -55 -10 35 80 125 Ambient temperature (C)

1.5 Normalized access time 1.4 1.3 1.2 1.1 1.0 0.9 0.8 MIN

1.5 Normalized access time 1.4

1.4 1.2

Normalized supply current ICC vs. cycle frequency 1/tRC, 1/tWC

Ta = 25C

1.2 1.1 1.0 0.9 0.8 55 10 35 80 125 Ambient temperature (C) Output sink current IOL vs. output voltage VOL

Normalized ICC

1.3

VCC = VCC(NOMINAL)

1.0 0.8 0.6 0.4 0.2 0.0 0

VCC = VCC(NOMINAL) Ta = 25C

NOMINAL Supply voltage (V) Output source current IOH vs. output voltage VOH

MAX

25 50 75 Cycle frequency (MHz)

100

Typical access time change tAA vs. output capacitive loading 35 30 Change in tAA (ns) VCC = VCC(NOMINAL)

140 Output source current (mA) 120 100 80 60 40 20 0 0

140 Output sink current (mA) 120 100 80 60 40 20 0 VCC 0

VCC = VCC(NOMINAL)PL Ta = 25C

VCC = VCC(NOMINAL) Ta = 25C

25 20 15 10 5 0

VCC Output voltage (V)

Output voltage (V)

250 500 750 Capacitance (pF)

1000

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AS7C256 AS7C3256

Package diagrams
28-pin PDIP Min Max 0.175 0.010 0.058 0.064 0.016 0.022 0.008 0.014 1.400 0.295 0.320 0.278 0.298 0.100 BSC 0.330 0.370 0.120 0.140 0 15 0.055

A S E1 E B e b A1 Seating Plane eA

Pin 1

A A1 B b c D E E1 e eA L S

B A E1 E2 A1 b

28-pin SOJ Min Max A A1 A2 B b c D E E1 E2 e


0.025 0.095 0.140 0.105

Seating Plane

Pin 1 A2 E

0.028 TYP 0.018 TYP 0.010 TYP 0.245 0.295 0.327 0.730 0.285 0.305 0.347

e c L A2 A A1

0.050 BSC

Hd

pin 1(22)

pin 8(21)

28-pin 813.4 Min Max A A1


A2 0.10 0.95 0.15 0.10 11.60 1.20 0.20 1.05 0.25 0.20 11.80

pin 1(7) 28-pin E

pin 5(8)

Note: This part is compatible with both pin numbering conventions used by various manufacturers.

b c D e

0.55 nominal

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Ordering information
Package / Access time Plastic DIP, 300 mil Volt/Temp 5V commercial 3.3V commercial 5V commercial Plastic SOJ, 300 mil 3.3V commercial 5V industrial 3.3V industrial 5V commercial TSOP 8x13.4 3.3V commercial 5V industrial 3.3V industrial 10 ns AS7C256-10PC AS7C3256-10PC AS7C256-10JC AS7C3256-10JC AS7C256-10JI AS7C3256-10JI AS7C256-10TC AS7C3256-10TC AS7C256-10TI AS7C3256-10TI 12 ns AS7C256-12PC AS7C3256-12PC AS7C256-12JC AS7C3256-12JC AS7C256-12JI AS7C3256-12JI AS7C256-12TC AS7C3256-12TC AS7C256-12TI AS7C3256-12TI 15 ns AS7C256-15PC AS7C3256-15PC AS7C256-15JC AS7C3256-15JC AS7C256-15JI AS7C3256-15JI AS7C256-15TC AS7C3256-15TC AS7C256-15TI AS7C3256-15TI 20 ns AS7C256-20PC AS7C3256-20PC AS7C256-20JC AS7C3256-20JC AS7C256-20JI AS7C3256-20JI AS7C256-20TC AS7C3256-20TC AS7C256-20TI AS7C3256-20TI

Part numbering system


AS7C 3 256 XX X C or I Commercial temperature range: 0 oC to 70 0C Industrial temperature range: -40C to 85C

SRAM prefix

3 = 3.3V supply Device number

Access time

Package: J T

= SOJ 300 mil = TSOP 8x13.4

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