PD - 9.

1311A

IRFZ34NS/L
HEXFET Power MOSFET
l l l l l l

Advanced Process Technology Surface Mount (IRFZ34NS) Low-profile through-hole (IRFZ34NL) 175C Operating Temperature Fast Switching Fully Avalanche Rated

VDSS = 55V RDS(on) = 0.040

ID = 29A
S

Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2 Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ34NL) is available for lowprofile applications.

D 2 Pak

T O -2 6 2

Absolute Maximum Ratings

Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds

Max.
29 20 100 3.8 68 0.45 20 130 16 5.6 5.0 -55 to + 175 300 (1.6mm from case )

Units
A W W W/C V mJ A mJ V/ns C

Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient (PCB mount) **

Typ.

Max.
2.2 40

Units
C/W

8/25/97

IRFZ34NS/L
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance RDS(ON) VGS(th) Gate Threshold Voltage Forward Transconductance gfs V(BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 55 2.0 6.5 Typ. 0.052 7.0 49 31 40 Max. Units Conditions V V GS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA 0.040 VGS = 10V, ID = 16A 4.0 V VDS = VGS, I D = 250A S V DS = 25V, I D = 16A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 34 ID = 16A 6.8 nC VDS = 44V 14 VGS = 10V, See Fig. 6 and 13 VDD = 28V ID = 16A ns RG = 18 RD = 1.8, See Fig. 10 Between lead, nH 7.5 and center of die contact 700 VGS = 0V 240 pF VDS = 25V 100 = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

IS
I SM

V SD t rr Q rr ton

Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time

Min. Typ. Max. Units

Conditions D MOSFET symbol 29 showing the A G integral reverse 100 p-n junction diode. S 1.6 V TJ = 25C, IS = 16A, VGS = 0V 57 86 ns TJ = 25C, IF = 16A 130 200 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

ISD 16 A, di/dt 420A/s, VDD V(BR)DSS ,

TJ 175C

VDD = 25V, starting TJ = 25C, L = 610H

RG = 25, IAS = 16A. (See Figure 12)

Pulse width 300s; duty cycle 2%. Uses IRFZ34N data and test conditions

** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994.

IRFZ34NS/L
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4.5V TOP

1000

I , D ra in -to -S o u rce C u rre n t (A ) D

100

I , D ra in -to -S o u rce C u rre n t (A ) D

VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4.5V TOP

100

10

10

4 .5V

4 .5V 2 0 s PU LSE W ID TH
1 0.1

TC = 25C T J = 2 5C
1 10

A
100

1 0.1 1

20 s PU L SE W ID TH TJ 175 C T C = 175C
10 100

V D S , D rain-to-S ource V oltage (V )

V D S , Drain-to-Source V oltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

100

2.4

R D S (o n) , D ra in -to -S o u rc e O n R e s ista n ce (N o rm a lize d )

I D = 2 6A

I D , D r ain- to-S ourc e C u rre nt (A )

TJ = 2 5 C TJ = 1 7 5 C

2.0

1.6

10

1.2

0.8

0.4

1 4 5 6 7

V DS = 2 5V 2 0 s P U LS E W ID T H
8 9 10

0.0 -60 -40 -20 0 20 40 60 80

V G S = 1 0V

100 120 140 160 180

V G S , G ate-t o-S ou rce V olt age (V )

T J , Junction T em perature (C )

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance Vs. Temperature

IRFZ34NS/L
1200

1000

800

C o ss
600

V G S , G a te -to -S o u rce V o lta g e (V )

V GS C iss C rss C is s C oss

= = = =

0V, f = 1 MH z C gs + C gd , C ds SH O R TED C gd C ds + C gd

20

I D = 1 6A V DS = 4 4V V DS = 2 8V

16

C , C a p a c ita n c e (p F )

12

400

C rs s
200

0 1 10 100

0 0 10 20

FO R TES T C IR CU IT SEE FIG U R E 13

30 40

V D S , Drain-to-Source V oltage (V)

Q G , Total Gate Charge (nC )

Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage

1000

1000

I S D , R e v e rse D ra in C u rre n t (A )

OPE R ATIO N IN TH IS A RE A LIMITE D BY R D S(o n)

100

I D , D ra in C u rre n t (A )

100 10 s

TJ = 175 C TJ = 25 C
10

100 s 10 1m s

1 0.4 0.8 1.2 1.6

VG S = 0 V

1 1

T C = 25 C T J = 17 5C S ing le Pulse
10

10m s

A
100

2.0

V S D , S ource-to-Drain Voltage (V )

V D S , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 8. Maximum Safe Operating Area

IRFZ34NS/L
VDS
30

RD

VGS RG

D.U.T.
+

25

- V DD

I D , Drain Current (A)

10 V
20
Pulse Width 1 s Duty Factor 0.1 %

15

Fig 10a. Switching Time Test Circuit

VDS 90%

10

0 25 50 75 100 125 150 175

T C , Case Temperature

( C)

10% VGS
td(on) tr t d(off) tf

Fig 9. Maximum Drain Current Vs. Case Temperature

Fig 10b. Switching Time Waveforms

10

Thermal Response (Z thJC )

D = 0.50 0.20 0.10 0.05 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJC + T C

0.1

0.02 0.01

0.01 0.00001

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRFZ34NS/L
250

E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)

TO P
200

L VDS D.U.T. RG + 10 V

B OT TO M

ID 6.5A 11A 16 A

150

VDD

IAS tp
0.01

100

50

Fig 12a. Unclamped Inductive Test Circuit

V(BR)DSS tp VDD VDS

0 25

VD D = 2 5V
50 75 100 125 150

A
175

Starting T J , Junction Temperature (C)

Fig 12c. Maximum Avalanche Energy Vs. Drain Current

IAS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator Same Type as D.U.T.

50K 12V .2F .3F

QG

10 V
QGS VG QGD
VGS
3mA

D.U.T.

+ V - DS

IG

ID

Charge

Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform

Fig 13b. Gate Charge Test Circuit

IRFZ34NS/L
Peak Diode Recovery dv/dt Test Circuit

D.U.T

Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer

RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test

+ V DD

Driver Gate Drive P.W. Period D=

P.W. Period VGS=10V

D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt

VDD

Re-Applied Voltage Inductor Curent

Body Diode

Forward Drop

Ripple 5%

ISD

* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS

IRFZ34NS/L
D2Pak Package Outline

10.54 ( .415) 10.29 ( .405) 1.40 (.055) MAX. -A2

4.69 (.185) 4.20 (.165)

-B 1.32 (.052) 1.22 (.048)

10.16 (.400) RE F .

6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580) 5.28 (.208) 4.78 (.188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE F.

1.78 (.070) 1.27 (.050)

3X

1.40 (.055) 1.14 (.045) 5.08 ( .200)

0.93 (.037) 3X 0.69 (.027) 0.25 (.010) M B A M

0.55 (.022) 0.46 (.018)

1.39 (.055) 1.14 (.045)

MINIMUM RECO MM ENDED F OO TP RINT 11.43 (.450)

NO TE S: 1 DIM ENS IO NS AF T ER S OLDE R DIP . 2 DIM ENS IO NING & TO LERA NCING PE R ANS I Y 14.5M, 1982. 3 CO NT RO LLING DIME NSIO N : INCH. 4 HE AT SINK & LEAD DIMEN SION S DO NO T INCLUDE BURRS.

LE AD ASS IG NM ENT S 1 - G AT E 2 - DRA IN 3 - S OU RC E

8.89 (.350) 17.78 (.700)

3.81 (.150) 2.08 (.082) 2X 2.54 (.100) 2X

Part Marking Information

D2Pak

IN TER NATION AL REC TIFIER L OGO AS SEMBLY LOT CODE

PART NU MBER F53 0S 9246 9B 1M

DATE CODE (YYW W ) YY = YEAR W W = W EE K

IRFZ34NS/L
Package Outline
TO-262 Outline

Part Marking Information

TO-262

IRFZ34NS/L
Tape & Reel Information
D2Pak

TR R
1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1) 3 .9 0 (.1 5 3) 1 .6 0 (.0 6 3) 1 .5 0 (.0 5 9) 0 .3 68 (.0 14 5 ) 0 .3 42 (.0 13 5 )

F E E D D IR E C TIO N 1 .8 5 (.0 7 3 )
1 .6 5 (.0 6 5 )

11 .6 0 (. 45 7 ) 11 .4 0 (. 44 9 )

15 .4 2 (.60 9 ) 15 .2 2 (.60 1 )

2 4 .30 (.9 5 7) 2 3 .90 (.9 4 1)

TR L
1 0. 90 (.4 29 ) 1 0. 70 (.4 21 ) 1. 75 (.0 69 ) 1. 25 (.0 49 ) 1 6. 10 (.6 34 ) 1 5. 90 (.6 26 ) 4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8)

FE E D D IR E C TIO N

1 3.5 0 (. 532 ) 1 2.8 0 (. 504 )

2 7.4 0 (1 .079 ) 2 3.9 0 (.9 41) 4

33 0.0 0 (14. 17 3) M AX .

6 0.0 0 (2 .36 2) M IN .

N O T ES : 1. C O M F O R M S T O EIA -418 . 2. C O N T R O LLIN G D IM EN SIO N : M ILLIM E T ER . 3. D IM E N S IO N M EA S U R E D @ H U B . 4. IN C LU D E S F L AN G E D IS T O R T IO N @ O U T E R ED G E.

26 .40 (1. 03 9) 24 .40 (.9 61 ) 3

3 0.4 0 (1 .19 7) MA X . 4

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 8/97