MITSUBISHI <INTELLIGENT POWER MODULES>

PM50CLB060
FLAT-BASE TYPE INSULATED PACKAGE

PM50CLB060
FEATURE
a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1m fine rule process. For example, typical Vce(sat)=1.5V @Tj=125C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each conservation upper and lower arm of IPM. c) New small package Reduce the package size by 32%, thickness by 22% from S-DASH series. 3 50A, 600V Current-sense IGBT type inverter Monolithic gate drive & protection logic Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (P-Fo available from upper arm devices) Acoustic noise-less 3.7kW class inverter application UL Recognized Yellow Card No.E80276(N) File No.E80271

APPLICATION General purpose inverter, servo drives and other motor controls

PACKAGE OUTLINES
120 7 19.75 3.25 16 3-2 106 0.25 66.5

Dimensions in mm

17 16 3-2 16 3-2 15.25 2-5.5 6-2 MOUNTING HOLES 1.5 16 3

4 4

25.75

35

55

13

19

4 4

25

4 4 2.5 19.5 22 7.75 23

4 4

4 4

4 4

42 .

2-2.5

1.5

1
N P

9.5

23 98.25

23

Terminal code 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. VUPC UFO UP VUP1 VVPC VFO VP VVP1 VWPC WFO 11. 12. 13. 14. 15. 16. 17. 18. 19. WP VWP1 VNC VN1 NC UN VN WN Fo

19-s0.5

11.5 27.5

9.5

May 2005

MITSUBISHI <INTELLIGENT POWER MODULES>

PM50CLB060
FLAT-BASE TYPE INSULATED PACKAGE

INTERNAL FUNCTIONS BLOCK DIAGRAM

NC Fo
1.5k

VNC WN

VN1

VN

UN

WP VWP1 VWPC WFO

VP VVPC

VVP1 VFO

UP VUPC

VUP1 UFO

1.5k

1.5k

1.5k

Gnd In

Fo Vcc

Gnd In

Fo Vcc

Gnd In

Fo Vcc

Gnd In

Fo Vcc

Gnd In

Fo Vcc

Gnd In

Fo Vcc

Gnd

Si Out

OT

Gnd

Si Out

OT

Gnd

Si Out

OT

Gnd

Si Out

OT

Gnd

Si Out

OT

Gnd

Si Out

OT

NC

MAXIMUM RATINGS (Tj = 25C, unless otherwise noted) INVERTER PART

Symbol VCES IC ICP PC Tj Parameter Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature Condition VD = 15V, VCIN = 15V TC = 25C TC = 25C TC = 25C Ratings 600 50 100 131 20 ~ +150 Unit V A A W C

(Note-1)

CONTROL PART
Symbol VD VCIN VFO IFO Parameter Supply Voltage Input Voltage Fault Output Supply Voltage Fault Output Current Condition Applied between : VUP1-VUPC VVP1-VVPC, VWP1-VWPC, VN1-VNC Applied between : UP-VUPC, VP-VVPC WP-VWPC, UN VN WN-VNC Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC FO-VNC Sink current at UFO, VFO, WFO, FO terminals Ratings 20 20 20 20 Unit V V V mA

May 2005

MITSUBISHI <INTELLIGENT POWER MODULES>

PM50CLB060
FLAT-BASE TYPE INSULATED PACKAGE
TOTAL SYSTEM
Parameter Supply Voltage Protected by VCC(PROT) SC VCC(surge) Supply Voltage (Surge) Storage Temperature Tstg Isolation Voltage Viso Symbol Condition VD = 13.5 ~ 16.5V, Inverter Part, Tj = +125C Start Applied between : P-N, Surge value 60Hz, Sinusoidal, Charged part to Base, AC 1 min. Ratings 400 500 40 ~ +125 2500 Unit V V C Vrms

THERMAL RESISTANCES
Symbol Rth(j-c)Q Rth(j-c)F Rth(c-f) Parameter Junction to case Thermal Resistances Contact Thermal Resistance Condition Inverter IGBT (per 1 element) Inverter FWDi (per 1 element) Case to fin, (per 1 module) Thermal grease applied (Note-1) (Note-1) (Note-1) Min. Limits Typ. Max. 0.95* 1.61* 0.038 Unit

C/W

* If you use this value, Rth(f-a) should be measured just under the chips. (Note-1) Tc (under the chip) measurement point is below. arm axis X Y UP IGBT FWDi 29.0 29.5 7.3 1.6 VP IGBT FWDi 64.6 65.1 7.3 2.1 WP IGBT FWDi 85.9 86.4 7.3 2.1 UN IGBT FWDi 38.1 37.6 5.3 4.6 VN IGBT FWDi 54.8 55.3 5.3 4.6 (unit : mm) WN IGBT FWDi 76.1 75.6 5.3 4.6

Bottom view

ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise noted) INVERTER PART

Symbol VCE(sat) VEC ton trr tc(on) toff tc(off) ICES Parameter Collector-Emitter Saturation Voltage FWDi Forward Voltage Condition VD = 15V, IC = 50A VCIN = 0V (Fig. 1) IC = 50A, VD = 15V, VCIN = 15V VD = 15V, VCIN = 0V15V VCC = 300V, IC = 50A Tj = 125C Inductive Load VCE = VCES, VCIN = 15V (Fig. 5) Tj = 25C Tj = 125C (Fig. 2) Min. 0.5 Limits Typ. 1.6 1.5 2.2 1.0 0.2 0.4 1.2 0.5 Max. 2.1 2.0 3.3 2.4 0.4 1.0 2.5 1.0 1 10 Unit V V

Switching Time

(Fig. 3,4) Tj = 25C Tj = 125C

Collector-Emitter Cutoff Current

mA

May 2005

MITSUBISHI <INTELLIGENT POWER MODULES>

PM50CLB060
FLAT-BASE TYPE INSULATED PACKAGE

CONTROL PART
Symbol ID Vth(ON) Vth(OFF) SC toff(SC) OT OTr UV UVr IFO(H) IFO(L) tFO Parameter Circuit Current Input ON Threshold Voltage Input OFF Threshold Voltage Short Circuit Trip Level Short Circuit Current Delay Time Over Temperature Protection Supply Circuit Under-Voltage Protection Fault Output Current Minimum Fault Output Pulse Width VD = 15V, VCIN = 15V Condition VN1-VNC V*P1-V*PC Min. 1.2 1.7 100 135 11.5 1.0 Limits Typ. 15 5 1.5 2.0 0.2 145 125 12.0 12.5 10 1.8 Max. 25 10 1.8 2.3 12.5 0.01 15 Unit mA V A s C V mA ms

Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN VN WN-VNC (Fig. 3,6) 20 Tj 125C, VD = 15V VD = 15V VD = 15V Detect Tj of IGBT chip 20 Tj 125C VD = 15V, VFO = 15V VD = 15V (Fig. 3,6) Trip level Reset level Trip level Reset level (Note-2) (Note-2)

(Note-2) Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to protect it.

MECHANICAL RATINGS AND CHARACTERISTICS

Symbol Parameter Mounting torque Weight Mounting part Condition screw : M5 Min. 2.5 Limits Typ. 3.0 340 Max. 3.5 Unit Nm g

RECOMMENDED CONDITIONS FOR USE

Symbol VCC VD VCIN(ON) VCIN(OFF) fPWM tdead Parameter Supply Voltage Control Supply Voltage Input ON Voltage Input OFF Voltage PWM Input Frequency Arm Shoot-through Blocking Time Condition Applied across P-N terminals Applied between : VUP1-VUPC, VVP1-VVPC VWP1-VWPC, VN1-VNC (Note-3) Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN VN WN-VNC Using Application Circuit of Fig. 8 For IPMs each input signals (Fig. 7) Recommended value 400 15 1.5 0.8 9.0 20 2.0 Unit V V V kHz s

(Note-3) With ripple satisfying the following conditions: dv/dt swing 5V/s, Variation 2V peak to peak

May 2005

MITSUBISHI <INTELLIGENT POWER MODULES>

PM50CLB060
FLAT-BASE TYPE INSULATED PACKAGE
PRECAUTIONS FOR TESTING 1. Before appling any control supply voltage (VD), the input terminals should be pulled up by resistores, etc. to their corresponding supply voltage and each input signal should be kept off state. After this, the specified ON and OFF level setting for each input signal should be done. 2. When performing SC tests, the turn-off surge voltage spike at the corresponding protection operation should not be allowed to rise above VCES rating of the device. (These test should not be done by using a curve tracer or its equivalent.)
P, (U,V,W)
IN Fo IN Fo

P, (U,V,W)

VCIN
(0V)

Ic

VCIN
(15V)

Ic

VD (all)

U,V,W, (N)

VD (all)

U,V,W (N)

Fig. 1 VCE(sat) Test

Fig. 2 VEC Test

a) Lower Arm Switching

P

VCIN (15V) VCIN

Signal input (Upper Arm) Signal input (Lower Arm)

Fo

Fo
U,V,W

trr Irr
CS

VCE Ic 90%

Vcc 90%

b) Upper Arm Switching

VCIN Signal input (Upper Arm) Signal input (Lower Arm)

VD (all)
P

Ic

10%

10% tc(on)

10% tc(off)

10%

Fo
U,V,W

VCIN
CS

Vcc

td(on)

tr

td(off)

tf

VCIN (15V)

Fo

(ton= td(on) + tr)

N

(toff= td(off) + tf)

VD (all)

Ic

Fig. 3 Switching time and SC test circuit

Fig. 4 Switching time test waveform

VCIN Short Circuit Current

P, (U,V,W) A
IN Fo

Constant Current SC
Pulse VCE

VCIN (15V)

Ic

VD (all)

U,V,W, (N)

Fo toff(SC)

Fig. 5 ICES Test

Fig. 6 SC test waveform

IPM input signal VCIN (Upper Arm)

0V
IPM input signal VCIN (Lower Arm)

1.5V

2V

1.5V

0V

2V

1.5V

2V

tdead

tdead

tdead

1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value

Fig. 7 Dead time measurement point example

May 2005

MITSUBISHI <INTELLIGENT POWER MODULES>

PM50CLB060
FLAT-BASE TYPE INSULATED PACKAGE

P
20k 10

VUP1 UFo UP VUPC

1.5k

Vcc Fo In

OT OUT Si U

VD

IF

GND GND Vcc Fo In GND GND Vcc Fo OT OUT Si W OT OUT Si OT OUT Si V

0.1

VVP1 VFo
1.5k

VD

VP VVPC VWP1 WFo

1.5k

VD
20k

WP VWPC

In GND GND Vcc Fo

IF

10

UN
0.1

In GND GND N OT

20k

IF

10

Vcc VN Fo In

OUT Si

0.1 20k

GND GND VN1

10

Vcc Fo In

OT OUT Si NC

VD

IF

WN

0.1

VNC

GND GND

NC 5V
1k

Fo

1.5k

: Interface which is the same as the U-phase

Fig. 8 Application Example Circuit

NOTES FOR STABLE AND SAFE OPERATION ; Design the PCB pattern to minimize wiring length between opto-coupler and IPMs input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler. Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler. Fast switching opto-couplers: tPLH, tPHL 0.8s, Use High CMR type. Slow switching opto-coupler: CTR > 100% Use 4 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the power supply. Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N terminal. Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line and improve noise immunity of the system.

May 2005

MITSUBISHI <INTELLIGENT POWER MODULES>

PM50CLB060
FLAT-BASE TYPE INSULATED PACKAGE

PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (INVERTER PART TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (INVERTER PART TYPICAL)

COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)

60 Tj = 25C

COLLECTOR CURRENT IC (A)

15V VD = 17V 13V

VD = 15V

50 40 30 20 10 0

1.5

0.5 Tj = 25C Tj = 125C 0 0 10 20 30 40 50 60 70

0.5

1.5

COLLECTOR-EMITTER VOLTAGE VCE (V)

COLLECTOR CURRENT IC (A)

COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)

COLLECTOR-EMITTER SATURATION VOLTAGE (VS. VD) CHARACTERISTICS (INVERTER PART TYPICAL) 2

SWITCHING TIME CHARACTERISTICS (TYPICAL) 101

1.5

SWITCHING TIME tc(on), tc(off) (s)

7 VCC = 300V 5 VD = 15V Tj = 25C 4 Tj = 125C 3 2 Inductive load

100
7 5 4 3 2

tc(off) tc(on) tc(off)

0.5 IC = 50A Tj = 25C Tj = 125C 0 12 13 14 15 16 17 18

101

4 5 7 101

3 4 5 7 102

CONTROL SUPPLY VOLTAGE VD (V)

COLLECTOR CURRENT IC (A)

101

SWITCHING LOSS ESW(on), ESW(off) (mJ/pulse)

SWITCHING TIME CHARACTERISTICS (TYPICAL)

7 5 4 3 2

SWITCHING LOSS CHARACTERISTICS (TYPICAL)

3 2

SWITCHING TIME ton, toff (s)

100
7 5 4 3 2 ESW(on)

100
7 5 4 3 2

toff ton VCC = 300V VD = 15V Tj = 25C Tj = 125C Inductive load

5 7 101 2 3 4 5 7 102 2 3

101
7 ESW(off) 5 4 3 2

VCC = 300V VD = 15V Tj = 25C Tj = 125C Inductive load

2 3 4 5 7 101 2 3 45 7

101

102

4 5 7 100

COLLECTOR CURRENT IC (A)

COLLECTOR CURRENT IC (A)

May 2005

MITSUBISHI <INTELLIGENT POWER MODULES>

PM50CLB060
FLAT-BASE TYPE INSULATED PACKAGE

COLLECTOR RECOVERY CURRENT IC (A)

DIODE FORWARD CHARACTERISTICS (INVERTER PART TYPICAL)

7 5 4 3 2

REVERSE RECOVERY TIME trr (s)

102

VD = 15V

7 5 4 3 2

trr

7 5 4 3

Irr

101
7 5 4 3 2

101
7 5 4 3 2

101 trr VCC = 300V VD = 15V Irr Tj = 25C 2 Tj = 125C Inductive load 100 2 3 4 5 7 102 2 3
7 5 4 3

Tj = 25C Tj = 125C 0 0.5 1 1.5 2 2.5

100

102

3 4 5 7 101

EMITTER-COLLECTOR VOLTAGE VEC (V)

COLLECTOR RECOVERY CURRENT IC (A)

ID VS. fc CHARACTERISTICS (TYPICAL) 50 100

TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (INVERTER PART)

NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j c)

VD = 15V Tj = 25C 40

7 5 3 2

101
7 5 3 2

ID (mA)

30 N-side

20

10 P-side 0 0 5 10 15 20 25

102 Single Pulse 7 5 IGBT Part; Per unit base = Rth(j c)Q = 0.95C/ W 3 FWDi Part; 2 Per unit base = Rth(j c)F = 1.61C/ W 103 5 10 2 3 5 7104 2 3 5 7103 2 3 5 7102 2 3 5 7101 2 3 5 7100 2 3 5 7101 TIME (s)

fc (kHz)

REVERSE RECOVERY CURRENT lrr (A)

DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 100 102

May 2005