Anda di halaman 1dari 7

PF08103B

MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone

ADE-208-785C (Z) 4th Edition May 1999 Application


Dual band amplifier for E-GSM900 (880 to 915 MHz) and DCS1800 (1710 to 1785 MHz). For 3.5 V nominal battery use

Features
1 in / 2 out dual band amplifier Simple external circuit including output matching circuit Simple band switching and power control High gain 3stage amplifier : +1 dBm input for GSM, +4.5 dBm input for DCS Lead less thin & Small package : 11 13.75 1.8 mm High efficiency : 45% Typ at 35.0 dBm for E-GSM 35% Typ at 32.5 dBm for DCS1800

PF08103B
Internal Circuit Block Diagram
Vdd1 Vdd2

Pout GSM Pin Pout DCS

Bias circuit

VCTL

VCTL

Vapc

Band Select and Power Control


Operating Mode GSM Tx ON DCS Tx ON Tx OFF VCTL H L L VCTL L H L Vapc Control Control < 0.2 V

Current of Control Pin


Control Pin VCTL Equivalent Input Circuit Control Current 2 A Max

VCTL

1 A Max

Vapc

3 mA Max at 2.2 V

Note: Control current is preliminary value.

PF08103B
Absolute Maximum Ratings (Tc = 25C)
Item Supply voltage Supply current Symbol VDD I DD GSM I DD DCS VCTL , VCTL voltage Vapc voltage Input power Operating case temperature Storage temperature Output power VCTL, VCTL Vapc Pin Tc (op) Tstg Pout GSM Pout DCS Rating 8.5 3.5 2 4 4 10 30 to +100 30 to +100 5 3 Unit V A A V V dBm C C W W

Note: The maximum ratings shall be valid over both the E-GSM-band (880-915 MHz), and the DCS-band (1710-1785 MHz).

Electrical Characteristics for DC (Tc = 25C)


Item Drain cutoff current Symbol Ids Min Typ Max 20 300 Unit A A Test Condition VDD = 4.7 V, Vapc = 0 V, VCTL = 0 V, VCTL = 0 V VDD = 4.7 V, Vapc = 0 V, VCTL = 0 V, VCTL = 0 V, Tc = 20 to +80C Vapc = 2.2 V VCTL = 3 V VCTL = 3 V

Vapc control current VCTL control current VCTL control current

Iapc I CTL I CTL

3 2 1

mA A A

PF08103B
Electrical Characteristics for GSM900 mode (Tc = 25C)
Test conditions unless otherwise noted:
f = 880 to 915MHz, V DD1 = V DD2 = 3.5V, Pin = +1dBm, VCTL = 2.0V, VCTL = 0.1V, Rg = Rl = 50, Tc = 25C, Pulse operation with pulse width 577 s and duty cycle 1:8 shall be used.
Item Frequency range Control voltage range Total efficiency 2nd harmonic distortion 3rd harmonic distortion 4th~8th harmonic distortion Input VSWR Output power (1) Output power (2) Isolation Isolation at DCS RF-output when GSM is active Switching time Stability Symbol f Vapc T 2nd H.D. 3rd H.D. 4th~8th H.D. VSWR (in) Pout (1) Pout (2) Min 880 0.2 40 35.0 33.5 Typ 45 45 45 1.5 36.0 34.2 45 30 Max 915 2.2 35 35 35 3.5 37 20 Unit MHz V % dBc dBc dBc dBm dBm dBm dBm Vapc = 2.2V VDD = 3.0V, Vapc = 2.2V, Tc = +85C Vapc = 0.2 V Pout GSM = 35dBm (GSM mode) Measured at f = 1760 to 1830MHz, Pin(GSM) = +1dBm Pout
GSM

Test Condition

Pout

GSM

= 35dBm,

Vapc = controlled

tr, t f

= 0 to 35.0dBm

No parasitic oscillation

VDD = 3 to 5.1V, Pout 35.0dBm, Vapc GSM 2.2V GSM pulse. Rg = 50, Tc = 25C, Output VSWR = 6 : 1 All phases VDD = 3 to 5.1V, Pout GSM 35.0dBm, Vapc GSM 2.2V GSM pulse. Rg = 50, t = 20sec., Tc = 25C, Output VSWR = 10 : 1 All phases f0 = 915MHz, f rx = f0 +10MHz Pout GSM = 35dBm, RES BW = 100kHz f0 = 915MHz, f rx = f0 +20MHz Pout GSM = 35dBm, RES BW = 100kHz Pout Pout
GSM GSM

Load VSWR tolerance

No degradation

Noise power

Pnoise1 Pnoise2

80 84 200 20 5

dBm dBm dB/V deg/ dB dB

Slope Pout/Vapc Phase shift Total conversion gain1

= 0 to 35dBm = 34 to 35dBm

f0 = 915MHz, (Pin = +1dBm) Other sig. = 895MHz (Pin = 40dBc) Pout GSM = 33.5dBm f0 = 915MHz, (Pin = +1dBm) Other sig. = 905MHz (Pin = 40dBc) Pout GSM = 33.5dBm Pout GSM = +5dBm, 4%AM modulation at input 50kHz modulation frequency

Total conversion gain2

dB

AM output

20

PF08103B
Electrical Characteristics for DCS1800 mode (Tc = 25C)
Test conditions unless otherwise noted:
f = 1710 to 1785MHz, V DD1 = V DD2 = 3.5V, Pin = +4.5dBm, VCTL = 0.1V, VCTL = 2.0V, Rg = Rl = 50, Tc = 25C, Pulse operation with pulse width 577 s and duty cycle 1:8 shall be used.
Item Frequency range Control voltage range Total efficiency 2nd harmonic distortion 3rd harmonic distortion 4th~8th harmonic distortion Input VSWR Output power (1) Output power (2) Isolation Switching time Stability Symbol f Vapc T 2nd H.D. 3rd H.D. 4th~8th H.D. VSWR (in) Pout (1) Pout (2) tr, t f Min 1710 0.2 30 32.5 30.8 Typ 35 45 45 3 33 31.3 42 1 Max 1785 2.2 35 35 35 4 37 2 Unit MHz V % dBc dBc dBc dBm dBm dBm s Vapc = 2.2V VDD = 3.1V, Vapc = 2.2V, Tc = +85C Vapc = 0.2V Pout
DCS

Test Condition

Pout

DCS

= 32.5dBm,

Vapc = controlled

= 0 to 32.5dBm

No parasitic oscillation

VDD = 3.1 to 5.1V, Pout DCS 32.5dBm, Vapc 2.2V DCS pulse. Rg = 50, Tc = 25C, Output VSWR = 6 : 1 All phases VDD = 3.1 to 5.1V, Pout DCS 32.5dBm, Vapc 2.2V DCS pulse. Rg = 50, t = 20sec., Tc = 25C, Output VSWR = 10 : 1 All phases f0 = 1785MHz, frx = f0 +20MHz, Pout DCS = 32.5dBm, RES BW = 100kHz Pout Pout
DCS DCS

Load VSWR tolerance

No degradation

Noise power Slope Pout/Vapc Phase shift Total conversion gain

Pnoise

77 200 20 5

dBm dB/V deg/ dB dB

= 0 to 32dBm = 31 to 32dBm

f0 = 1785MHz, (Pin = +4.5dBm) Other sig. = 1765 MHz (40dBc) Pout DCS = 31dBm Pout DCS = 0dBm, 4%AM modulation at input 50kHz modulation frequency

AM output

20

PF08103B
Package Dimensions
Unit: mm 1.8 0.2 8 7 G 6 5

G 3 (Upper side)

4 G 65 G

11.0 0.3

11.0 0.3

(10.8)

8 13.75 0.3

G 13.75 0.3 (5.40) (5.40) (3.30) (3.30) (1.60)(1.60) (3.40) (1.60)(1.60) (1.40) (1.40) (1.40) 1 (1.40)

(1.40) (3.40)

(1.40)

(2.40) (2.40)

11.0 0.3

Pin arrangement 1 : VCTL 2 : VCTL 3 : Vdd2 4 : Pout GSM 5 : Pout DCS 6 : Vdd1 7 : Vapc 8 : Pin G : GND

(3.70)

(3.70)

(2.50) (2.50) (Bottom side)

Remark: Coplanarity of bottom side of terminals are less than 0 0.1mm.


Hitachi Code JEDEC EIAJ Weight (reference value) RF-O

(1.40)

PF08103B
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachis or any third partys patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third partys rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachis sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachis sales office for any questions regarding this document or Hitachi semiconductor products.

Hitachi, Ltd.
Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

URL

NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to:
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX

Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.