Program

October 15

Opening
Room : Main Hall 9:00 - 9:15

S1-2 (invited) 12:00 - 12:30 A Novel Insulated GaN Gate-Driver with Wireless Power Transfer Technology
*Daisuke Ueda(*1), Nobuyuki Otsuka(*1), Shuichi Nagai(*1), Noboru Negoro(*2), Takeshi Fukuda(*1), Hiroyuki Sakai(*1), Tatsuo Morita(*2), Tetsuzo Ueda(*2), and Tsuyoshi Tanaka(*2) (*1)Advanced Technology Research Laboratories, Panasonic, Japan and (*2)Industrial Devices Company, Panasonic, Japan

October 15

Plenary Session
Room : Main Hall 9:15 - 11:15 October 15 PL-1 (plenary) 9:15 - 10:15 InGaN-based nanocolumns for photonic devices
*K. Kishino(*1,*2), V. Ramesh(*1), K. Yamano(*1), and S. Ishizawa(*1) (*1)Sophia University, Japan and (*2)Sophia Nanotechnology Research Center, Japan

Single Session S2

Optical Devices and Properties

Room : Main Hall 14:00 - 15:30 S2-1 (invited) 14:00 - 14:30 Bulk-GaN based low-droop light-emitting diodes for lighting applications
*Michael R Krames Soraa, Inc., United States of America

PL-2 (plenary) 10:15 - 11:15 Exciton-Phonon Interaction in Quantum Dots Based on Nitrides
*Axel Hoffmann(*1), Irina Ostapenko(*1), Gerald Hoenig(*1), Yuri Brunnenmeier(*1), Gordon Callsen(*1), Andrei Schliwa(*1), Satoshi Kako(*2), and Yasuhiko Arakawa(*2) (*1)Institute of Solid State Physics, TU Berlin, Germany and (*2)University of Tokyo, Japan

S2-2 (invited) 14:30 - 15:00 Bosonic Terahertz Lasers Based on GaN

*Alexey V Kavokin CNRS and University of Montpellier II, France and Physics and Astronomy School, University of Southampton, United Kingdom

October 15

Single Session S1

S2-3 (invited) 15:00 - 15:30 Realization of high efciency nitride-based solar cells
*Motoaki Iwaya(*1), Mikiko Mori(*1), Shinichiro Kondo(*1), Shota Yamamoto(*1), Tatsuro Nakao(*1), Takahiro Fujii(*1), Tetsuya Takeuchi(*1), Satoshi Kamiyama(*1), Isamu Akasaki(*1,*3), and Hiroshi Amano(*2,*3) (*1)Faculty of Science and Technology, Meijo University, Japan, (*2)Graduate School of Engineering, Nagoya University, Japan, and (*3)Akasaki Research Center, Nagoya University, Japan

Electronic Devices
Room : Main Hall 11:30 - 12:30 S1-1 (invited) 11:30 - 12:00 (In)AlGaN Devices and ICs for High-Power/HighFrequency Applications
*Stephan Maroldt, R diger Quay, Markus Musser, Dirk u Schwantuschke, Rolf Aidam, Patrick Waltereit, Vincenzo Carrubba, and Oliver Ambacher Fraunhofer Institute for Applied Solid-State Physics (IAF), Freiburg, Germany

October 15

Single Session S3

MoP-GR-2 Growth characteristics of InGaN/GaN quantum wells on semipolar (202 1) and (202 1 ) planes
*Chia-Yen Huang(*1), Yuji Zhao(*2), Feng Wu(*1), Yoshinobu Kawaguchi(*1), Daniel F Feezell(*1), Steven P Denbaars(*1), James S Speck(*1), and Shuji Nakamura(*1) (*1)Department of Materials, University of California, Santa Barbara, United States of America and (*2)Department of Electrical and Computer Engineering, University of California, Santa Barbara, United States of America

Growth
Room : Main Hall S3-1 (invited) GaN-on-Si: soon on the fast lane 16:00 - 18:00 16:00 - 16:30

*Alois Jakob Krost Otto-von-Guericke University Magdeburg, Germany

MoP-GR-3 Enhanced Ge doping levels in a-plane GaN compared with c-plane GaN
*Matthias Wieneke, Stephanie Fritze, Hartmut Witte, Armin Dadgar, Juergen Blaesing, and Alois Krost Otto-von-Guericke-University Magdeburg, Germany

S3-2 (invited) 16:30 - 17:00 Feasibility of large area nitride devices prepared by pulsed sputtering
*Hiroshi Fujioka Institute of Industrial Science, the University of Tokyo, Japan

S3-3 (invited) 17:00 - 17:30 Bulk GaN crystal growth by Na ux method

*Yusuke Mori, Mamoru Imade, Mihoko Maruyama, and Masashi Yoshimura Graduate School of Engineering, Osaka University, Japan

MoP-GR-4 Basal Plane Stacking Fault Suppression by Nitrogen Carrier Gas in m-plane GaN Regrowth by Hydride Vapor Phase Epitaxy
*Benjamin N Bryant(*1), Shuji Nakamura(*1,*2), and James S Speck(*1) (*1)Materials Department, University of California, Santa Barbara, United States of America and (*2)Electrical Engineering Department, University of California, Santa Barbara, United States of America

S3-4 (invited) 17:30 - 18:00 AlN-based technology for deep UV and high-power applications
*Z. Sitar(*1,*2), B. Moody(*1), S. Craft(*1), R. Schlesser(*1), R. Dalmau(*1), J. Xie(*1), S. Mita(*1), T. Rice(*2), J. Tweedy(*2), J. LeBeau(*2), L. Hussey(*2), R. Collazo(*2), B. Gaddy(*2), and D. Irving(*2) (*1)HexaTech Inc., United States of America and (*2)North Carolina State University, United States of America

MoP-GR-5 Theoretical investigation of the inuence of growth orientation on indium incorporation efciency during InGaN thin lm growth by MOVPE
*Tomoe Yayama(*1), Yoshihiro Kangawa(*1,*2), and Koichi Kakimoto(*1,*2) (*1)Department of Aeronautics and Astronautics, Kyushu University, Japan and (*2)Research Institute for Applied Mechanics, Kyushu University, Japan

October 15

Session MoP

Poster Presentation 1
Room : Main Hall 18:15 - 20:00 MoP-GR-1 Stress Relaxation and Critical Thickness for Mist Dislocation Generation in (101 0) and (303 1 ) InGaN/GaN Heteroepitaxy
*Po Shan Shan Hsu(*1), Matthew T. Hardy(*1), Erin C. Young(*1), Alexey E. Romanov(*1,*2,*3), Steven P. Denbaars(*1), Shuji Nakamura(*1), and James S. Speck(*1) (*1)Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, United States of America, (*2)Ioffe Physical-Technical Institute, Russian Academy of Sciences, Russia, and (*3)Institut of Physics, University of Tartu, Estonia

MoP-GR-6 Determination of indium content in semipolar GaInN multiple quantum well samples using XRD
*Heiko Bremers(*1), Holger J nen(*1), Uwe Rossow(*1), o Stefan Schwaiger(*2), Ferdinand Scholz(*2), Simon Ploch(*2), Tim Wernike(*3), Michael Kneissl(*3), and Andreas Hangleiter(*1) (*1)Institute of Applied Physics, TU Braunschweig, Germany, (*2)Institute of Optoelectronics, University of Ulm, Germany, and (*3)Institute of Solid State Physics, TU Berlin, Germany

MoP-GR-7 Fabrication of InGaN/GaN multiple quantum wells on (11 01) GaN

*Tomoyuki Tanikawa(*1,*2), Tomotaka Sano(*2), Maki Kushimoto(*2), Yoshio Honda(*2), Masahito Yamaguchi(*2), and Hiroshi Amano(*2) (*1)Institute for Materials Research, Tohoku University, Japan and (*2)Department of Electrical Engineering and Computer Science, Nagoya University, Japan

MoP-GR-8 Selective area growth of semipolar (20-21) and (202-1) GaN by MOVPE
*Daiki Jinno(*1), Bei Ma(*1), Hideto Miyake(*1), Kazumasa Hiramatsu(*1), Yuuki Enatsu(*2), and Satoru Nagao(*3) (*1)Department of Electrical and Electronic Engineering, Mie University, Japan, (*2)Mitsubishi Chemical Corporation, Japan, and (*3)Mitsubishi Chemical Group Science and Technology Research Center, Inc., Japan

MoP-GR-14 Study of In-composition of InGaN islands on mplane GaN substrate using high-resolution microbeam XRD
*Choi Junghun(*1), Kanako Shojiki(*1), T. Shimada(*1), Tomoyuki Tanikawa(*1), Takashi Hanada(*1), Ryuji Katayama(*1), Takashi Matsuoka(*1), Y. Imai(*2), and S. Kimura(*2) (*1)Institute for Materials Research, Tohoku University, Japan and (*2)Japan Synchrotron Radiation Research Institute, Japan

MoP-GR-9 Optimization studies on semipolar (101 1) GaN layers grown on 2 wafers

*Tobias Meisch, Robert Leute, Frank Lipski, and Ferdinand Scholz Institute of Optoelectronics, University of Ulm, Germany

MoP-GR-15 A-plane InGaN/GaN light emitting diode with selfaligned air pit arrays by patterned epitaxial lateral overgrowth
Hyung Gu Kim(*1), Kyu Hyun Bang(*1), Younghak Chang(*1), Jina Jeon(*1), Eun Jeong Kang(*1), Sukkoo Jung(*1), Yoon Ho Choi(*1), Jung Soo Lee(*1), and *Jung Hoon Song(*2) (*1)LG Advanced Research Institute, Republic of Korea and (*2)Kongju National University, Republic of Korea

MoP-GR-10 Evaluation of {11-22} semipolar multiple quantum wells using thick InGaN layers with various In compositions
*Katsumi Uchida, Seita Miyoshi, Keisuke Yamane, Narihito Okada, and Kazuyuki Tadatomo Graduate School of Science & Engineering, Yamaguchi University, Japan

MoP-GR-16 Growth comparison study of polar and nonpolar AlxGa1-xN/GaN heterostructures using atom probe
*B. Mazumder(*1), M. H. Wong(*2), C. A. Hurni(*1), E. Young(*1), U. K. Mishra(*2), and J. S. Speck(*1) (*1)Materials Department, University of California, Santa Barbara, United States of America and (*2)Electrical and Computer Engineering, University of California, Santa Barbara, United States of America

MoP-GR-11 Improved performance of (112 0) non-polar InGaN/GaN light emitting diode grown using hemispherically patterned SiO2 mask on HPSS template
*Daehong Min(*1), Geunho Yoo(*1), Yongwoo Ryu(*1), Seunghwan Moon(*1), Heyongjin Kim(*2), Joonseop Kwak(*2), and Okhyun Nam(*1) (*1)LED Technology Center, Department of Nano-Optical Engineering, Korea Polytechnic, Republic of Korea and (*2)Department of Printed Electronics Engineering(WCU), Sunchon National University, Republic of Korea

MoP-GR-17 Effect of Low Temperature Buffer Layer on In-rich A-plane InGaN Grown on R-plane Sapphire
*Yun-Yo Lo(*1), Man-Fang Huang(*1), Hsin-Hao Chiu(*2), Jenn-Chyuan Fan(*3), and Wei-Li Chen(*2) (*1)Institute of Photonics, National Changhua University of Education, Taiwan, (*2)Department of Electronic Engineering, National Changhua University of Education, Taiwan, and (*3)Department of Electronic Engineering, Nan Kai University of Technology, Taiwan

MoP-GR-12 Surface morphology evolution of m-oriented GaN domains driven by effective surface energy mnimization
Yeonwoo Seo, Sanghwa Lee, *Mi Yeon Ju, Wooyoung Lee, So Young Oh, and Chinkyo Kim Dept. of Physics, Kyung Hee University, Republic of Korea

MoP-GR-18 Homoepitaxial growth of nonpolar Si-doped GaN by metal-organic vapor phase epitaxy
*Bei Ma, Daiki Jinno, Hideto Miyake, and Kazumasa Hiramatsu Mie Univesity, Japan

MoP-GR-13 Growth of semipolar {20-21} GaN layers on patterned sapphire substrate with wide-terrace
*Narihito Okada, Hiroyasu Oshita, Keisuke Yamane, and Kazuyuki Tadatomo Yamaguchi Univ., Japan

MoP-GR-19 Improved crystal quality of (11-22) semi-polar GaN grown on semi-polar nano-rod template
*Kun Xing, Yipin Gong, Xiang Yu, Jie Bai, and Tao Wang Department of Electronic and Electrical Engineering, University of Shefeld, United Kingdom

MoP-GR-20 Optical property of a-plane GaN grown on r-plane sapphire using nano- and microscale SiO2 masks
*Ji-Su Son(*1), Cao Miao(*1), Yoshio Honda(*1), Masahito Yamaguchi(*1), Hiroshi Amano(*1), Yong Gon Seo(*2), and Sung-Min Hwang(*2) (*1)Department of Electrical Engineering and Computer Science, Nagoya University, Japan and (*2)Optoelectronics Laboratory, Korea Electronics Technology Institute, Republic of Korea

MoP-GR-24 FDTD simulation of light extraction and polarization property of a-plane GaN light emitting diodes by controlled integration of silica nano-spheres
*Jeonghwan Jang(*1), Sung Hyun Park(*2), Daeyoung Moon(*1), Dong-Uk Kim(*3), Hojun Chang(*3), Gun-Do Lee(*2), Heonsu Jeon(*3,*4), Jimmy Xu(*1,*7), Yasushi Nanishi(*1,*5), and Euijoon Yoon(*1,*2,*6,*8) (*1)WCU Hybrid Materials Program, Department of Materials Science and Engineering, Seoul National University, Republic of Korea, (*2)Department of Materials Science and Engineering, Seoul National University, Republic of Korea, (*3)Department of Physics and Astronomy, Seoul National University, Republic of Korea, (*4)Department of Biophysics and Chemical Biology, Seoul National University, Republic of Korea, (*5)Department of Photonics, Ritsumeikan University, Japan, (*6)Department of Nano Science and Technology, Seoul National University, Republic of Korea, (*7)Department of Engineering and Physics, Brown University, United States of America, and (*8)Eneregy Semiconductor Research Center, Advanced Institutes of Convergence Technology, Seoul National University, Republic of Korea

MoP-GR-21 The Crystalline and Optical Properties of (11-22) Semipolar GaN and InGaN/GaN MQWs on (1-100) M-Sapphire
*Yun Jing Li(*1), Shih Pang Chang(*2), Kuok Pan Sou(*2), Jet Rung Chang(*1), and Chun Yen Chang(*1) (*1)Department of Electronics Engineering, National Chiao Tung University, Taiwan and (*2)Department of Photonic and Institute of Electro-Optical Engineering, National Chiao Tung University, Taiwan

MoP-GR-22 Effects of growth pressure of a-plane InGaN/GaN multiple quantum wells on optical performances of light-emitting diode
Tae-Joon Son(*1), Keun-Man Song(*2), Jong-Min Kim(*2), Chan-Soo Shin(*2), and *Jinsub Park(*1,*3) (*1)Department of Electronics Computer Engineering, Hanyang University, Republic of Korea, (*2)Korea Advanced Nano Fab Center (KANC), Republic of Korea, and (*3)Department of Electronics Engineering, Hanyang University, Republic of Korea

MoP-GR-25 DFT study for growth of m-plane GaN/ZnO interfaces

*Yasuhiro Oda(*1,*2), Kengo Nakada(*1,*2), and Akira Ishii(*1,*2) (*1)Department of Applied Mathematics and Physics, Tottori University, Japan and (*2)JST-CREST, Japan

MoP-GR-26 A comprehensive diagram to grow (0001) InGaN alloys by PA-MBE

*Zarko Gacevic(*1), Victor Gomez(*1), Noem Garcia Lep etit(*1), Paul Soto Rodriguez(*1), Ana Bengoechea(*1), Sergio Fernandez-Garrido(*1,*2), Richard Notzel(*1), and Enrique Calleja(*1) (*1)ISOM, Universidad Polit cnica de Madrid, Spain and e (*2)Paul-Drude-Institut f r Festk rperelektronik, Germany u o

MoP-GR-23 Characterization of optical and crystal properties for semipolar (11-22) GaN-based LEDs grown on m-plane (10-10) patterned sapphire substrates
*Ki-Ryong Song, Jae-Hwan Lee, Sang-Hyun Han, DukHwan Oh, and Sung-Nam Lee Department of Nano-Optical Engineering, Korea Polytechnic University, Republic of Korea

MoP-GR-27 Columnar microstructure in lattice-matched InAlN/GaN grown by plasma assisted molecular beam epitaxy
*Soojeong Choi, Feng Wu, Ravi Shivaraman, Erin C. Young, and James S. Speck Materials Department, University of California, Santa Barbara, United States of America

MoP-GR-28 Effect of III/V ratio on the polarity of AlN grown on Si (111) by PA-MBE
*Manvi Agrawal(*1), Dharmarasu Nethaji(*2), and Radhakrishnan K.(*1) (*1)NOVITAS, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore and (*2)Temasek Laboratories, Nanyang Technological University, Singapore

MoP-GR-29 Role of nonequivalent atomic step edges in the growth of InGaN by Plasma-Assisted MBE
*Henryk Turski(*1), Marcin Siekacz(*1,*2), Marta Sawicka(*1,*2), Zbig R. Wasilewski(*3), Sylwester Porowski(*1), and Czeslaw Skierbiszewski(*1,*2) (*1)Insitute of High Pressure Physics, Polish Academy of Sciences, Poland, (*2)Top-GaN Ltd., Poland, and (*3)Department of Electrical & Computer Engineering, Waterloo Institute of Nanotechnology, University of Waterloo, Canada

MoP-GR-35 Structure evolution of Cubic AlN Films Epitaxially grown on Sapphire(0001) by pulsed laser deposition
*Yutaro Ueda(*1), Tomohiro Yoshida(*1), Eiichi Kobayashi(*2), Kazushi Sumitani(*2), Toshihiro Okajima(*2), Aki Tominaga(*1), and Tsuyoshi Yoshitake(*1) (*1)Department of Applied Science for Electronics and Materials, Kyushu University, Japan and (*2)Kyushu Synchrotron Light Research Center, Japan

MoP-GR-30 Growth of improved quality LT GaN by using a new low temperature growth method
*In-Su Shin(*1), Ke Wang(*2), Tsutomu Araki(*2), Euijoon Yoon(*1), and Yasushi Nanishi(*1,*2) (*1)Department of Materials Science and Engineering, Seoul National University, Republic of Korea and (*2)Department of Photonics, Ritsumeikan University, Japan

MoP-GR-36 Effect of supply direction of precursors on a-plane GaN low angle incidence microchannel epitaxy by ammonia-based metal-organic molecular beam epitaxy
*Shota Uchiyama, Chia-Hung Lin, Yohei Suzuki, Takahiro Maruyama, and Shigeya Naritsuka Meijo University, Japan

MoP-GR-31 GaN-based heterostructures grown on ZnO substrates: growth,characterization and fabrication of a light emitting device
Yuanyang Xia(*1,*2), *Julien Brault(*1), Benjamin Damilano(*1), Philippe Vennegues(*1), Maud Nemoz(*1), Monique Teisseire(*1), Mathieu Leroux(*1), Jean Michel Chauveau(*1,*2), Ivan-Christophe Robin(*3), Jean-Louis Santailler(*3), Guy Feuillet(*3), and Remy Obrecht(*3) (*1)CRHEA-CNRS, France, (*2)University of Nice SophiaAntipolis, France, and (*3)CEA-LETI, France

MoP-GR-37 Growth and Intersubband Transition in AlGaN/GaN MQWs at 3-5 m

*Guang Chen, Xinqiang Wang, Shitao Liu, Jianhai Pan, and Bo Shen State Key Laboratory of Articial Microstructure and Mesoscopic Physics, School of Physics, Peking University, China

MoP-GR-38 Development of Molecular Dynamics Simulation for Molecular Beam Epitaxy of GaN under Ga-rich Conditions
*Takahiro Kawamura(*1), Takafumi Miki(*1), Yasuyuki Suzuki(*1), Yoshihiro Kangawa(*2), and Koichi Kakimoto(*2) (*1)Graduate School of Engineering, Mie University, Japan and (*2)Research Institute for Applied Physics, Kyushu University, Japan

MoP-GR-32 MBE Gowth of InN/InGaN MQWs Utilizing Alternate Shutter Sequence and in-situ Reectivity Technology
*Wei-Li Chen(*1), Hsin-Hao Chiu Chiu(*1), Che-Min Tsai Tsai(*1), Yun-Yu Lo(*1), Man-Fang Huang(*1), Der-Yuh Lin(*1), and Jenn-Chyuan Fan(*2) (*1)National Changhua University of Education, Taiwan and (*2)Nan Kai University of Technology, Taiwan

MoP-GR-39 Growth of AlGaN/GaN HEMT on 100 mm Si (111) by Ammonia-MBE

*Dharmarasu Nethaji(*1), Radhakrishnan K(*2), Manvi Agrawal(*2), Lingaparthi Ravikiran(*1,*2), Subramaniam Arulkumaran(*1), Vicknesh Shamuganathan(*1), Kenneth E Lee(*1), and Geok Ing Ng(*2) (*1)Temasek Laboratories, Nanyang Technological University, Singapore and (*2)School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore

MoP-GR-33 Annealing effect on GaN thin lms grown by MBE using ammonia cluster ions
*Hiroshi Saito(*1), Kazuaki Imai(*2), and Kazuhiko Suzuki(*2) (*1)Department of Applied Physics, Okayama University of Science, Japan and (*2)Department of Electric System Engineering, Hokkaido Institute of Technology, Japan

MoP-GR-34 Growth of GaN nanowall network structure on Si (111) substrate by MBE

*Aihua Zhong and Kazuhiro Hane Department of Nanomechanics, Tohoku University, Japan

MoP-GR-40 Low-temperature growth of semipolar InAlN on YSZ substrates

*Masaaki Oseki(*1), Atsushi Kobayashi(*1), Jitsuo Ohta(*1), Hiroshi Fujioka(*1,*3), and Masaharu Oshima(*2,*3) (*1)Institute of Industrial Science, The University of Tokyo, Japan, (*2)Department of Applied Chemistry, The University of Tokyo, Japan, and (*3)CREST, Japan Science and Technology Agency, Tokyo, Japan

MoP-GR-41 Effect of stress mitigating layers on the structural properties of GaN grown by ammonia MBE on 100 mm Si (111)
*Ravikiran Lingaparthi(*1,*2), Manvi Agrawal(*1), Dharmarasu Nethaji(*2), and Radhakrishnan K.(*1) (*1)NOVITAS, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore and (*2)Temasek Laboratories, Nanyang Technological University, Singapore

MoP-GR-48 Homoepitaxial growth of thick AlN layers by HVPE on bulk AlN substrates prepared by PVT
*Ryunosuke Sakamaki(*1), Yuki Kubota(*2), Toru Nagashima(*2), Toru Kinoshita(*2), Rafael Dalmau(*3), Raoul Schlesser(*3), Baxter Moody(*3), Jinqiao Xie(*3), Hisashi Murakami(*1), Yoshinao Kumagai(*1), Akinori Koukitu(*1), and Zlatko Sitar(*3,*4) (*1)Department of Applied Chemistry, Tokyo University of Agriculture and Technology, Japan, (*2)Tsukuba Research Laboratories, Tokuyama Corporation, Japan, (*3)Hexa Tech, Inc., United States of America, and (*4)Department of Materials Science and Engineering, North Carolina State University, United States of America

MoP-GR-42 Behavior of B1(high) Mode in Raman Spectra from InxGa1-xN Alloys ( 0 x 1 ) Grown by RF-MBE
*Kenji Kodama(*1), Koji Shimizu(*1), Jung-Gon Kim(*2), Hiroshi Harima(*2), and Akihiro Hashimoto(*1) (*1)Department of Electrical and Electronics Engineering, Graduated School of Engineering, University of Fukui, Japan and (*2)Department of Electronics and Information Science, Kyoto Institute of Technology, Japan

MoP-GR-49 Hydride Vapor Phase Epitaxy of Semipolar GaN on Patterned Sapphire Substrates
*Keisuke Yamane, Motohisa Ueno, Katsumi Uchida, Hiroshi Furuya, Narihito Okada, and Kazuyuki Tadatomo Graduate School of Science & Engineering, Yamaguchi University, Japan

MoP-GR-43 Growth and characterization of In-rich InAlN lm on Si (111) substrate

Wei Chun Chen, Yue Han Wu, Pei Yin Lin, Jr Yu Chen, Chun Yen Peng, Jr Sheng Tian, Tzu Chun Yen, and *Li Chang National Chiao Tung University, Taiwan

MoP-GR-50 AlN grown on a-plane and n-plane Sapphire by Low-pressure HVPE

*Naoki Goriki(*1), Hideto Miyake(*1), Kazumasa Hiramatsu(*1), Toru Akiyama(*1), Tomonori Ito(*1), and Osamu Eryu(*2) (*1)Mie University, Japan and (*2)Nagoya Institute of Technology, Japan

MoP-GR-44 Inference on Raman spectra by the crystal quality of RF-MBE grown InxAl1-xN alloys (0x1)
*Kensuke Kasagi(*1), Kenji Kodama(*1), Jung-Gon Kim(*2), Hiroshi Harima(*2), and Akihiro Hasimoto(*1) (*1)University of Fukui, Japan and (*2)Kyoto Institute of Technology, Japan

MoP-GR-51 Growth and Characterization of the AlGaN epilayers grown on the variation of high temperature AlN buffer layer thickness by HVPE
*Jonghee Hwang(*1), Hyun-Sik Kim(*1), Jin Ho Kim(*1), Tae Young Lim(*1), Hae Kon Oh(*2), Young Jun Choi(*2), and Hae Yong Lee(*2) (*1)Korea Institute of Ceramic Engineering & Technology, Republic of Korea and (*2)LumiGNtech Company, Republic of Korea

MoP-GR-45 Inuence of defect to the nitride compound growth on the defect graphene
*Kengo Nakada(*1,*2) and Akira Ishii(*1,*2) (*1)Department of Applied Mathematics and Physics, Tottori University, Japan and (*2)JST-CREST, Japan

MoP-GR-46 Ab initio studies of early stages of AlN and GaN growth on 4H- and 6H-SiC
*Elwira Wachowicz(*1), Malgorzata Sznajder(*2,*3), and Jacek A. Majewski(*3) (*1)Institute of Experimental Physics, University of Wroclaw, Poland, (*2)Institute of Physics, University of Rzeszow, Poland, and (*3)Faculty of Physics, University of Warsaw, Poland

MoP-GR-52 Accumulation of Background Impurities in HVPE Grown GaN Layers

*Alexander Usikov(*1), Vitali Soukhoveev(*2), Oleg Kovalenkov(*2), Alexander Syrkin(*2), Liza Shapovalov(*2), Anna Volkova(*2), Vladimir Ivantsov(*2), and Philippe Spiberg(*2) (*1)De Core Nanosemiconductors Limited, India and (*2)Ostendo Technology GaN Lab, United States of America

MoP-GR-47 Inuence of reaction parameters on the formation of AlN single crystal particles by chemical vapor deposition
*Masaki Fukazawa, Tatsuhiro Mori, Hiroko Kominami, Yoichiro Nakanishi, and Kazuhiko Hara Research Institute of Electronics, Shizuoka Univ, Japan

MoP-GR-53 Highly disordered GaN nanostructures as an antireection coating

Hyunkyu Park, *Sanghwa Lee, Mi yeon Ju, Wooyoung Lee, So young Oh, and Chinkyo Kim Dept. of Physics, Kyung Hee University, Republic of Korea

MoP-GR-54 Local carrier dynamics in freestanding GaN substrates grown by hydride vapor phase epitaxy studied using the spatio-time-resolved cathodoluminescence technique
*Kentaro Furusawa(*1), Yoichi Ishikawa(*1), Masanori Tashiro(*1), Koji Hazu(*1), Satoru Nagao(*2), Kenji Fujito(*2), Akira Uedono(*3), and Shigefusa F. Chichibu(*1) (*1)Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Japan, (*2)Gallium Nitride Department, Mitsubishi Chemical Corporation, Japan, and (*3)Division of Applied Physics, University of Tsukuba, Japan

MoP-GR-59 GaN growth on ion-implanted patterned sapphire substrates

*Yong Suk Cho(*1), M. Evans(*4), S. Chowdhury(*1), D. Meyaard(*1), M. Ma(*2), X. Yan(*3), J. Cho(*1), and E. Fred Schubert(*1) (*1)Future Chips Constellation, Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute (RPI), United States of America, (*2)Future Chips Constellation, Department of Materials Science and Engineering, Rensselaer Polytechnic Institute (RPI), United States of America, (*3)Future Chips Constellation, Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute (RPI), United States of America, and (*4)Varian Semiconductor Equipment, United States of America

MoP-GR-55 HVPE growth GaN layers in semipolar direction on planar Si(100), Si(210) substrates
Vasily N. Bessolov(*1,*2), Alexander A. Golovatenko(*2), *Elena V. Konenkova(*1), Sergey A. Kukushkin(*3), Vladimir I. Nikolaev(*2), Natalia V. Seredova(*1,*2), Shukrillo Sh. Sharodinov(*1,*2), and Mikhail P. Shcheglov(*1) (*1)A.F.Ioffe Physico-Technical institute, Russia, (*2)Perfect crystals LLC, Russia, and (*3)Institute of Problems of Mechanical Engineering, Russia

MoP-GR-60 Elimination and blocking of the defects by silica nanospheres in sandglass structure for high quality GaN template
*Young Jae Park(*1) and Chang-Hee Hong(*2) (*1)Chonbuk National University, Republic of Korea and (*2)Chonbuk National University, Republic of Korea

MoP-GR-56 A simple growth method to produce a-plane GaN thick lms by hydride vapor phase epitaxy
*Yin-Hao Wu, Chuo-Han Lee, Chung-Ming Chu, Yen-Hsien Yeh, Chan-Lin Chen, and Wei-I Lee Department of Electrophysics, National Chiao Tung University, Taiwan

MoP-GR-61 Growth and Characterization of GaN on Sputtered AlN Nucleation Layer

*Yu-Shan Hsiao(*1), Wei-Li Wang(*2), Yu-An Chen(*2), C. H. Lee(*2), and Cheng-Huang Kuo(*2) (*1)Easy Epi Photoelectronics Inc., Taiwan and (*2)National Chiao Tung University, Taiwan

MoP-GR-57 Effect of detailed radial angle control of stripe pattern on surface roughness and dislocation density in GaN on sapphire
*Koji Okuno(*1,*2), Takahide Oshio(*2), Naoki Shibata(*2), and Hiroshi Amano(*1) (*1)Department of Electronics and Computer Science, Nagoya University, Japan and (*2)Toyoda Gosei Company Limited, Optoelectronics Business Unit, Japan

MoP-GR-62 Evaluation of doping characteristic dependence on alternate supply timing of dopant in GaN using MOVPE
*Kouhei Yamashita(*1), Yoshio Honda(*1), Masahito Yamaguchi(*1), and Hiroshi Amano(*1,*2) (*1)Department of Electrical Engineering and Computer Science, Nagoya University, Japan and (*2)Akasaki Research Center, Nagoya University, Japan

MoP-GR-58 Optimization of crystalline quality of GaN using low temperature buffer layer by in situ X-ray diffraction monitoring
*Daiki Tanaka(*1), Daisuke Iida(*1), Motoaki Iwaya(*1), Tetsuya Takeuchi(*1), Satoshi Kamiyama(*1), and Isamu Akasaki(*1,*2) (*1)Faculty of Science and Technology, Meijo University, Japan and (*2)Akasaki Research Center, Nagoya University, Japan

MoP-GR-63 GaN overgrowth on nanoporous GaN template etched in a MOCVD chamber

*Cao Miao, Yoshio Honda, Masahito Yamaguchi, and Hiroshi Amano Department of Electrical Engineering and Computer Science, Naogya University, Japan

MoP-GR-64 Mg-Fe dopants interdiffusion in GaN by MOVPE

*Tomonobu Tsuchiya, Takeshi Kitatani, Akihisa Terano, and Kazuhiro Mochizuki Hitachi, Ltd., Central Research Laboratory, Japan

MoP-GR-65 Comparison of The Properties of GaN Film Grown on Patterned Sapphire Substrate with Different Pattern Designs
*Sung Wook Moon(*1), Do Han Lee(*2), Jung Yeop Hong(*1), and Dongjin Byun(*1,*2) (*1)Department of Nano-Photonics Engineering, Korea University, Republic of Korea and (*2)Department of Material Science and Engineering, Korea University, Republic of Korea

MoP-GR-71 Multi-Zone Topside Temperature Control in Close Coupled Showerhead MOVPE Reactors
*Adam R. Boyd(*1), Olivier Feron(*1), Peter Lauffer(*1), Xiaojun Chen(*1), Markus Luenenbuerger(*1), Ralf Leiers(*1), Simon Thomas(*2), Bernd Schineller(*1), Johannes Lindner(*1), and Michael Heuken(*1) (*1)AIXTRON SE, Germany and (*2)AIXTRON Ltd., United Kingdom

MoP-GR-66 Optical and structural characteristics of improved GaN epilayer on sapphire substrate with platinum nanocluster and its application in light emitting diode
*Ah Hyun Park, Yong Seok Lee, Tae Hoon Seo, Gangu Shin, Bo Kyoung Kim, Hyun Jun Jeong, Seul Be Lee, and EunKyung Suh School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Republic of Korea

MoP-GR-72 High-temperature heat-treatment of c-, a-, r- and m-plane sapphire substrates in mixed gases of H2 and N2
*Kazushiro Nomura, Shouko Hanagata, Atsusi Kunisaki, Rie Togashi, Hisasi Murakami, Yoshinao Kumagai, and Akinori Koukitu Department of Applied Chemistry,Tokyo University of Agriculture and Technology, Japan

MoP-GR-67 Chemical lift-off of GaN layer grown on a template with an AlN sacricial layer
*Chun-Ting Pan(*1), Hsu-Hun Hsueh(*2), Dong-Sing Wuu(*1,*3), and Ray-Hua Horng(*2) (*1)Department of Materials Science and Engineering, National Chung Hsing University, Taiwan, (*2)Institute of Precision Engineering, National Chung Hsing University, Taiwan, and (*3)Department of Electrical Engineering, Da-Yeh University, Taiwan

MoP-GR-73 High temperature growth of high crystalline GaN layers with a high growth rate by vapor phase epitaxy using Ga2O as a Ga source
*Yuan Bu(*1), Junichi Takino(*1), Tomoaki Sumi(*1), Akira Kitamoto(*1), Mamoru Imade(*1), Masashi Yoshimura(*1), Masashi Isemura(*2), and Yusuke Mori(*1) (*1)Osaka University, Japan and (*2)Itochu Plastics Inc., Japan

MoP-OD-1 InGaN quantum-well solar cells grown on Si substrate

*K. Y. Lai(*1), C. Y. Liu(*1), H. H. Liu(*1), C. C. Chang(*1), L. C. Cheng(*1), G. Y. Lee(*1), J.-I. Chyi(*1), L. K. Yeh(*2), J. H. He(*2), T. Y. Chung(*1), J. H. Liao(*1), C. C. Lai(*1), and L. C. Huang(*1) (*1)National Central University, Taiwan and (*2)National Taiwan University, Taiwan

MoP-GR-68 Top-Side Satellite to Satellite Temperature Control in Planetary MOCVD Reactors Using a Novel 400 nm Near-UV Pyrometer
Markus Luenenbuerger, Frank Schulte, *Bernd Schineller, and Michael Heuken AIXTRON SE, Germany

MoP-GR-69 Research of double polarities selective area growth of GaN by using MOVPE
*Yohei Fujita(*1), Yasusi Takano(*1), Yoku Inoue(*1), Masatomo Sumiya(*2), Shunro Fuke(*1), and Takayuki Nakano(*1) (*1)Department of Electrical Engneering, Faculty of Engineering, Shizuoka University., Japan and (*2)National Insititute Materials Science., Japan

MoP-OD-2 Improved photovoltaic performance of InGaN/GaN solar cells with optimized transparent current spreading electrode
*Xiao-Mei Cai(*1,*2), Yu Wang(*1,*2), Zhi-Da Li(*1), Shuo Lin(*1,*2), Ming-Ming Liang(*1,*2), Xue-Qin Lv(*2), Jiang-Yong Zhang(*1), and Bao-Ping Zhang(*1,*2) (*1)Laboratory of Micro/Nano Optoelectronics, Department of Physics, Xiamen University, Fujian, China and (*2)MEMS Research Center, Xiamen University, Fujian, China

MoP-GR-70 Comparative study of the growth mode of N-face GaN with Ga-face GaN grown by metal organic chemical vapor deposition
*Hao Zhou, Jincheng Zhang, Fanna Meng, Zhiyu Lin, Linxia Zhang, Ming Lu, Junshuai Xue, and Yue Hao Key Laboratory of Wide Band-gap Semiconductor materials and Devices, School of Microelectronics, Xidian University, China

MoP-OD-3 Effects of introducing Cu-doped In2O3 interlayer at the p-type GaN/ITO interface on the performance of InGaN-based solar cells
*Joon-Ho Oh(*1), Jun-Hyuk Song(*1), Jae-Phil Shim(*2), Jung-Hong Min(*2), Dong-Seon Lee(*2), and Tae-Yeon Seong(*1) (*1)Department of Materials Science and Engineering, Korea University, Republic of Korea and (*2)School of Information and Communications, Gwangju Institute of Science and Technology, Republic of Korea

MoP-OD-4 InxGa1-xN-based Intermediate-band Solar Cells

*Ming-Wen Hsiao(*1), Feng-Wen Huang(*1), Chia-Hui Lee(*1), Po-Cheng Chen(*1), Yu-Hsiang Yeh(*1), MingLun Lee(*2), Wei-Chih Lai(*1), and Jinn-Kong Sheu(*1) (*1)Department of Photonics, National Cheng Kung University, Taiwan and (*2)Department of Electro-Optical Engineering, Southern Taiwan University, Taiwan

MoP-OD-10 Vertical structure InGaN Solar Cell with In Compositional Variation

*Semi Oh(*1), Taek-Seung Kim(*1), Taehun Park(*1), Hodol Yoo(*1), Taekkyun Kim(*1), Dalma Gwon(*1), Kyoung-Kook Kim(*1), and Keunman Song(*2) (*1)Korea Polytechnic University, Republic of Korea and (*2)Korea Advanced Nano Fab Center, Republic of Korea

MoP-OD-5 Efciency Improvement in InGaN-based Solar Cells by Indium Tin Oxide Nano Dots Covered with ITO lm
*Dong-Ju Seo(*1), Jae-Phill Shim(*1), Sang-Bae Choi(*1), Tea-Hoon Seo(*2), Eun-Kyung Suh(*2), and Dong-Seon Lee(*1) (*1)Gwangju Institute of Science and Technology, Republic of Korea and (*2)Chonbuk National University, Republic of Korea

MoP-OD-12 Highly stable GaN photocatalyst to produce H2 gas from water

*Kazuhiro Ohkawa, Wataru Ohara, Daisuke Uchida, and Momoko Deura Department of Applied Physics, Tokyo University of Science, Japan

MoP-OD-6 Numerical simulations of the current-matching effect on the performance of InGaN/Si tandem cells
Po-Hsun Laio(*1), Chung-Hsien Tsai(*1), Yu-Ru Su(*1), *Shih-Wei Feng(*1), Chih-Ming Lai(*2), and Li-Wei Tu(*3) (*1)Department of Applied Physics, National University of Kaohsiung, Taiwan, (*2)Department of Electronic Engineering, Ming Chuan University, Taiwan, and (*3)Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Taiwan

MoP-OD-13 Fabrication of RGB pixels using integrated GaNbased Schottky-type light-emitting diodes
*Tohru Honda, Tomohiro Yamaguchi, Naoyuki Sakai, Shuhei Fujioka, and Yohei Sugiura Graduate School of Engineering, Kogakuin University, Japan

MoP-OD-14 Highly transparent conducting polymer top contacts for future III-nitride based single photon emitters
*Sally Riess(*1,*2), Martin Mikulics(*1,*2), Andreas Winden(*1,*2), Anna Haab(*1,*2), Roman Adam(*1,*2), Martina von der Ahe(*1,*2), Michel Marso(*3), Toma Stoica(*1,*2), Beata Kardynal(*1,*2), Detlev Gr tzmacher(*1,*2), and Hilde Hardtdegen(*1,*2) u (*1)Peter Gruenberg Institut, Forschungszentrum J lich, u Germany, (*2)JARA - Fundamntals of Future Information Technologies, Germany, and (*3)Facult des Sciences, e de la Technologie et de la Communication, Universit du e Luxembourg, Luxembourg

MoP-OD-7 Impact of substrate nitridation on the photoluminescence and photovoltaic characteristics of GaN grown on p-Si (100) by molecular beam epitaxy
*Thirumaleshwara N Bhat(*1), Basanta Roul(*1,*2), Mohana K Rajpalke(*1), Mahesh Kumar(*1,*2), and S B Krupanidhi(*1) (*1)Materials Research Centre, Indian Institute of Science, India and (*2)Central Research Laboratory, Bharat Electronics, India

MoP-OD-8 High In composition InGaN for InN quantum dot intermediate band solar cells
*Victor Jesus Gomez Hernandez, Paul Eduardo David Soto rodriguez, Praveen Kumar, Enrique Calleja Pardo, and Richard N tzel o ISOM, UPM, Spain

MoP-OD-15 GaN-based vertical cavities with all dielectric reectors and polar and nonpolar orientations
*Ryoko Shimada(*1), Serdal Okur(*2), Fan Zhang(*2), Shopan Haz(*2), Jaesoong Lee(*2), Vilaliy Avrutin(*2), u Umit Ozg r(*2), and Hadis Morkoc(*2) (*1)Department of Mathematical and Physical Sciences, Japan Womens University, Japan and (*2)Department of Electrical and Computer Engineering, Virginia Commonwealth University, United States of America

MoP-OD-9 Ideality factor of GaN-based light-emitting diodes determined by the measurement of photo-voltaic characteristics
*Hyun-Joong Kim, Sang-Ho Lee, Guen-Hwan Ryu, and Han-Youl Ryu Inha University, Republic of Korea

MoP-OD-16 Characteristics of InGaN-Based superluminescent diodes with one sided obliquely facet
*Chang Zeng(*1,*2), Shu-Ming Zhang(*1,*2), Jian-Ping Liu(*1,*2), De-Yao Li(*1,*2), Mei-Xing Feng(*1,*2), Zeng-Cheng Li(*1,*2), Kun Zhou(*1,*2), Feng Wang(*1,*2), Huai-Bing Wang(*1,*2), Hui Wang(*1,*2), and Hui Yang(*1,*2) (*1)Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, China and (*2)Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, China

MoP-OD-17 InGaN Light-emitting Diodes of Linear Geometry for Floodlighting

Ling Zhu and *Hoi Wai Choi Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong

MoP-OD-24 1- m Micro-lens Array on Flip-chip LEDs

*K. H. Li, Q. Zhang, and H. W. Choi Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong

MoP-OD-18 CMOS compatible metal contacts for GaN on Si LEDs

*Celso Cavaco, Evi Vrancken, Maarten Rosmeulen, Vasyl Motsnyi, and Haris Osman Imec, Belgium

MoP-OD-25 White light emitting diodes based on GaN doped with beryllium
*Henryk Teisseyre(*1,*2), Michal Bockowski(*2), Michael Kunzer(*3), Christian Gossler(*3), Katarzyna Holc(*3), Benjamin Damilano(*4), Izabella Grzegory(*2), Adrian Kozanecki(*2), and Ulrich Schwarz(*3) (*1)Institute of Physics PAS, Al. Lotnikow 32/46, 02668 Warsaw, Poland, (*2)Institute of High Pressure PAS, Sokolowska 29/37, 01-142 Warsaw, Poland, (*3)Fraunhofer Institute for Applied Solid State Physics IAF Tullastrae 72 79108 Freiburg,, Germany, and (*4)Centre de Recherche sur l Hetero-Epitaxie et ses Applications, Rue B. Gregory, 06560 Valbonne, France

MoP-OD-19 Dual-wavelength light-emitting device based on surface plasmon-enhanced CdSe/ZnS quantum dots by gold nanopaticles in blue light-emitting diode
*Tae Hoon Seo, Ah Hyun Park, Seul Be Lee, Gangu Shin, Bo Kyoung Kim, Hyun Joon Jeong, and Eun-Kyung Suh School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Republic of Korea

MoP-OD-20 Green InGaN-based light emitting diodes and laser diodes grown by combining both MOCVD and MBE
*Benjamin Damilano(*1), Julien Brault(*1), Eric Frayssinet(*1), Hyonju Kim-Chauveau(*1), Sakhawat Hussain(*1), Jean Massies(*1), Jean-Yves Duboz(*1), Pleun Maaskant(*2), Jean-Michel Lamy(*2), Mahbub Akhter(*2), and Brian Corbett(*2) (*1)CRHEA-CNRS, Valbonne, France and (*2)Tyndal National University, Cork, Ireland

MoP-OD-26 Bias-Selective Dual-Operation-Mode Ultraviolet Schottky-Barrier Photodetectors Fabricated on High-Resistivity Homoepitaxial GaN
Feng Xie, *Hai Lu, Fangfang Ren, Dunjun Chen, Rong Zhang, and Youdou Zheng School of Electronic Science and Engineering, Nanjing University, China

MoP-OD-27 Enhanced CO2 conversion capability in an AlGaN/GaN photo-electrode

*Masahiro Deguchi(*1), Satoshi Yotsuhashi(*1), Hiroshi Hashiba(*1), Yuji Zenitani(*1), Reiko Hinogami(*1), Yuka Yamada(*1), and Kazuhiro Ohkawa(*2) (*1)Advanced Technology Research Laboratory, Panasonic Corporation, Japan and (*2)Department of Applied Physics, Tokyo University of Science, Japan

MoP-OD-21 Hybrid MBE/MOVPE Grown III-Nitride Microcavity

*Zarko Gacevic(*1), Georg Rossbach(*2), Marlene Glauser(*2), Jacques Levrat(*2), Gatien Cosendey(*2), Maria dolores Martin(*3), Sergio Fernandez-Garrido(*1), Noemi Garcia Lepetit(*1), Francois Reveret(*4), Jean francois Carlin(*2), Raphael Butte(*2), Luis Vina(*3), Nicolas Grandjean(*2), and Enrique Calleja(*1) (*1)ISOM, Universidad Polit cnica de Madrid, Spain, e (*2)Ecole Polytechnique F d rale de Lausanne (EPFL), e e Institute of Condensed Matter Physics, Swiss, (*3)Departamento de Fsica de Materiales C-IV, Universidad Autónoma de Madrid, Spain, and (*4)LASMEA, UMR 6602 UBP/CNRS, France

MoP-OD-28 Investigation of radiation detection which used BGaN

*Katsuhiro Atsumi(*1), Hisashi Kaneko(*2), Takahiro Nishioka(*1), Yoku Inoue(*2), Hidenori Mimura(*1), Toru Aoki(*1), and Takayuki Nakano(*2) (*1)Research Institute of Electronics, Shizuoka University, Japan and (*2)Department of Electrical and Electronic Engineering, Faculty of Engineering, Shizuoka University, Japan

MoP-OD-23 Thermal reduction and nitrogen doping of graphene oxide by MOCVD and its application in InGaN light-emitting diodes for low Specic contact resistance
*Min Han, Nam Han, Beo Deul Ryu, Ji Hye Kang, Hyun Kyu Kim, Hee Yun Kim, Young Jae Park, Kang Bok Ko, and Chang Hee Hong Semiconductor Physics Research Center, School of Semiconductor and chemical engineering, Chonbuk National University, Republic of Korea

MoP-OD-29 GaN Schottky Photodetectors On Silicon Substrate Based On Novel AlN/AlGaN Buffer Multilayer
*S. P. Chang(*1), S. J. Chang(*1), and K. J. Chen(*2) (*1)Institute of Microelectronics & Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Taiwan and (*2)The Instrument Development Center, National Cheng Kung University, Taiwan

MoP-OD-30 Spectral sensitivity tuning of vertical InN nanopyramid based photodetectors

*Andreas Winden(*1,*2), Martin Mikulics(*1,*2), Anna Haab(*1,*2), Sally Riess(*1,*2), Roman Adam(*2,*3), Michel Marso(*4), Toma Stoica(*1,*2), Beata Kardynal(*1,*2), Detlev Gruetzmacher(*1,*2), and Hilde Hardtdegen(*1,*2) (*1)Peter Gruenberg Institute (PGI-9), Forschungszentrum Juelich, Germany, (*2)JARA - Fundamentals of Future Information Technologies, Germany, (*3)Peter Gruenberg Institute (PGI-6), Forschungszentrum Juelich, Germany, and (*4)Facult des Sciences, de la Technologie et de la Commue nication, Universit du Luxembourg, Luxembourg e

MoP-OD-36 Inuence of carrier lifetime, transit time and operation voltages on the photoresponse of visible-blind AlGaN MSM photodetectors
*Jessica Schlegel(*1), Martin Martens(*1), Moritz Brendel(*2), Andrea Knigge(*2), Frank Brunner(*2), Sven Einfeldt(*2), Markus Weyers(*2), and Michael Kneissl(*1,*2) (*1)Institute of Solid State Physics, TU Berlin, Germany and (*2)Ferdinand-Braun-Institut, Leibniz-Institut f r u H chstfrequenztechnik, Germany o

MoP-OD-37 Inuence of temperature on the optical properties of near-UV LEDs

*Neysha Lobo Ploch(*1), Sven Einfeldt(*2), Tim Kolbe(*1), Arne Knauer(*2), Martin Frentrup(*1), Viola Kueller(*2), Markus Weyers(*2), and Michael Kneissl(*1,*2) (*1)Institute of Solid State Physics, Technical University Berlin, Berlin, Germany and (*2)Ferdinand-Braun-Institut, Leibniz-Institut f r H chstfrequenztechnik, Berlin, Germany u o

MoP-OD-31 Sensing Response of an AlGaN/GaN HEMT-based Hydrogen Sensor at High Temperatures

*Lai Wang Department of Electronic Engineering, Tsinghua University, China

MoP-OD-32 Development of a high-sensitivity GaN photocathode

*Yoshihiro Ishigami(*1), Keisuke Akiyama(*1), Takaaki Nagata(*1), Kazumasa Kato(*1), Tsuneo Ihara(*1), Kimitsugu Nakamura(*1), Itaru Mizuno(*1), Tetsuji Matsuo(*2), Emiko Chino(*2), and Hiroyuki Kyushima(*1) (*1)Electron Tube Div., Hamamatsu Photonics K.K., Japan and (*2)Production Headquarters Opto BU, Sanken Electric Co., Ltd., Japan

MoP-OD-38 AlInGaN-Based I-line Ultraviolet Light Emitting Diodes with High Power Efciency
*Ya-Wen Lin(*1), Shih-Cheng Huang(*1,*2), Dong-Sing Wuu(*2,*4), Po-Min Tu(*1,*3), Ching-Hsueh Chiu(*1,*3), Chih-Peng Hsu(*1), Hung-Jui Chen(*5), and Tai-Yuan Lin(*5) (*1)Advanced Optoelectronic Technology Inc., Taiwan, (*2)Department of Materials Science and Engineering, National Chung Hsing University, Taiwan, (*3)Department of Photonics Engineering, Electronics Engineering, and Institute of Photonic System, National Chiao Tung University, Taiwan, (*4)Department of Materials Science and Engineering, Da-Yeh University, Taiwan, and (*5)Institute of Optoelectronic Sciences, National Taiwan Ocean University, Taiwan

MoP-OD-33 A full free spectral range tuning of p-i-n doped Gallium Nitride microdisk cavity
*Nan Niu(*1), Tsung-Li Liu(*1), Igor Aharonovich(*1), Kasey J. Russell(*1), Alexander Woolf(*1), Thomas C. Sadler(*2), Haitham A.R El-Ella(*2), Menno J. Kappers(*2), Rachel A. Oliver(*2), and Evelyn L. Hu(*1) (*1)School of Engineering and Applied Sciences, Harvard University, United States of America and (*2)Department of Materials Science and Metallurgy, University of Cambridge, United Kingdom

MoP-OD-39 High power efciency AlGaN-based UV LEDs

*Thorsten Passow(*1), Richard Gutt(*1), Michael Kunzer(*1), Wilfried Pletschen(*1), Lutz Kirste(*1), Kamran Forghani(*2), Ferdinand Scholz(*2), Klaus K hler(*1), and o Joachim Wagner(*1) (*1)Fraunhofer-Institut f r Angewandte Festk rperphysik, u o Germany and (*2)Institut f r Optoelektronik, Universit t u a Ulm, Germany

MoP-OD-34 GaN-Based Metal-Insulator-Semiconductor UltraViolet Photodetectors with HfO2 Insulators

*Chin-Hsaing Chen Department of Electronic Engineering, Cheng Shiu University, Taiwan

MoP-OD-40 Low noise fast AlGaN -based deep UV optoelectronic pairs

Sergey Rumyantsev(*1), *Yuri Bilenko(*2), Michael Shur(*1), and Remis Gaska(*2) (*1)Rensselaer Polytechnic Institute, United States of America and (*2)Sensor Electronic Technology, Inc., United States of America

MoP-OD-35 GaN-Based Metal-Insulator-Semiconductor UltraViolet Sensors with the CsF Insulating Layer
Chin-Hsaing Chen, *Chia-Ming Tsai, Ming-Han Yang, and Wei-Chi Lin Department of Electronic Engineering, Cheng Shiu University, Taiwan

MoP-OD-41 Theoretical analysis for linearly polarized emission in UV-LED with subwavelngth grating structure
*Yuusuke Takashima(*1), Masanobu Haraguchi(*2), and Yoshiki Naoi(*1) (*1)Department of Electrical and Engineering,the University of Tokushima, Japan and (*2)Department of Optical Science and Technology,the University of Tokushima, Japan

MoP-PR-2 Localized Lasing Mode in GaN-based QuasiPeriodic Nanopillars

*Tzeng-Tsong Wu(*1), Chih-Cheng Chen(*1), Hao-Wen Chen(*1), Tien-Chang Lu(*1), Shing-Chung Wang(*1), and Cheng-Huang Kuo(*2) (*1)Department of Photonic & Institute of Electro-Optical Engineering, National Chiao Tung University, Taiwan and (*2).Institute of Lighting and Energy photonics, National Chiao Tung University, Taiwan

MoP-OD-42 2 Inches Large Area DUV AlGaN Light Emitter using Micro-plasma Excitation
*Noriko Kurose(*1) and Yoshinobu Aoyagi(*2) (*1)Ritsumeikan Univ. Ritsumeikan R-GIRO, Japan and (*2)Ritsumeikan Univ. Ritsumeikan R-GIRO, Japan

MoP-PR-3 633 nm-Red emissions from InGaN nanocolumn LED by RF-MBE

*Ramesh Vadivelu(*1,*2), Yusuke Igawa(*1,*2), and Katsumi Kishino(*1,*2) (*1)Faculty of Science and Technology, Sophia University, Tokyo, Japan and (*2)Nano Technology Research Centre, Sophia University, Japan

MoP-OD-43 Development of High-Efciency and HighlyUniform AlGaN-Based Deep-Ultraviolet LightEmitting Diodes by 2-inch3 Metalorganic Vapor Phase Epitaxy System
*Takuya Mino(*1,*2), Hideki Hirayama(*1), Norimichi Noguchi(*1,*2), Takayoshi Takano(*1,*2), Akihiko Murai(*2), Masaharu Yasuda(*2), and Kenji Tsubaki(*1,*2) (*1)The Institute of Physical and Chemical Research (RIKEN), Japan and (*2)Eco Solutions Company, Panasonic Corporation, Japan

MoP-PR-4 Photocurrent phenomena in nanoribbon InAlN/GaN HEMTs

*F. Gonz lez-Posada(*1), M. Azize(*2), X. Gao(*3), S. a Guo(*3), E. Monroy(*1), and T. Palacios(*2) (*1)CEA-Grenoble, INAC / SP2M, France, (*2)Massachussets Institute of Technology, Cambridge, United States of America, and (*3)IQE RF LLC, Somerset, United States of America

MoP-OD-44 Graphene-based transparent conductive electrodes in UV LEDs

*Byung-Jae Kim and Jihyun Kim Korea University, Republic of Korea

MoP-PR-6 Strain induced interdiffusion in AlGaN quantum dots heterostructures

*Catherine Bougerol(*1), Vincent Fellmann(*2), David Cooper(*3), Cedric Leclere(*4), Hubert Renevier(*4), Bruno Gayral(*2), and Bruno Daudin(*2) (*1)Institut N el-CNRS, France, (*2)INAC-CEA, France, e (*3)LETI-CEA, France, and (*4)LMGP-Grenoble INP, France

MoP-OD-45 Improvement of light extraction efciency of AlGaN deep-UV LED using 2-dimensional photonic crystal (2D-PhC)
*Sachie Fujikawa(*1,*2), Hideki Hirayama(*1,*2), Yukio Kashima(*3), Hiroshi Nishihara(*4), Takaharu Tashiro(*4), Takashi Ohkawa(*4), Sung Won Youn(*5), and Hideki Takagi(*5) (*1)RIKEN, Japan, (*2)JST-CREST, Japan, (*3)Marubun Co. Ltd., Japan, (*4)Toshiba machine Co., Ltd., Japan, and (*5)AIST, Japan

MoP-PR-7 Al-rich AlGaN nanowires grown by Molecular Beam Epitaxy: Evidence for kinetic alloys demixing and localized optical emission
*Aur lie Pierret(*1,*2), Catherine Bougerol(*3), Ana e Cros(*4), Bruno Gayral(*1), and Bruno Daudin(*1) (*1)CEA-CNRS group NPSC, CEA/INAC/SP2M, 17 rue des Martyrs, 38054 Grenoble, France, France, (*2)ONERACNRS - Laboratoire dEtude des Microstructures, UMR 104, 29 avenue de la Division Leclerc BP 72, 92322 Ch&acirctillon cedex, France, France, (*3)CEA-CNRS group NPSC, CNRS/Inst. N&eacuteel, 25 rue des Martyrs, 38042 Grenoble, France, France, and (*4)Materials Science Institute, University of Valencia, P.O. Box 22085, 46071, Valencia, Spain, Spain

MoP-OD-46 CHVPE grown 360 nm UV LEDs

*Heikki I Helava(*1), Andrey A Antipov(*2), Iossif S Barash(*2), Alexander D Roenkov(*2), Sergei Yu Kurin(*2), Oleg V Avdeev(*2), Dmitrii P Litvin(*2), Sergei S Nagalyuk(*2), Tatyana Yu Chemekova(*2), Evgenii N Mokhov(*2), Yuri N Makarov(*3), and Mark G Ramm(*1) (*1)Nitride Crystals Inc, United States of America, (*2)Nitride Crystals Ltd, Russia, and (*3)Nitride Crystals inc, United States of America

MoP-PR-8 Emission wavelength dependence of internal quantum efciency in InGaN nanowires

*Hideaki Murotani(*1), Hiroya Ando(*2), Takehiko Tsukamoto(*1), Toko Sugiura(*1), Yoichi Yamada(*3), Takuya Tabata(*4), Yoshio Honda(*4), Masahito Yamaguchi(*4), and Hiroshi Amano(*4) (*1)Department of Electrical and Electronic Engineering, Toyota National College of Technology, Japan, (*2)Department of Information and Computer Engineering, Toyota National College of Technology, Japan, (*3)Department of Materials Science and Engineering, Yamaguchi University, Japan, and (*4)Department of Electronics and Akasaki Research Center, Nagoya University, Japan

MoP-PR-13 Size effect on the optical properties of InGaN quantum dot arrays grown on highly inclined semipolar planes
Kuo-Bin Hong, *Yen-Ju Lin, and Mao-Kuen Kuo Institute of Applied Mechanics, National Taiwan University, Taiwan

MoP-PR-14 pn core-shell GaN NWs by selective area growth MOVPE

*Luis Artus(*1), Juan Jimenez(*2), Ramon Cusco(*1), Nuria Domenech-Amador(*1), Vanesa Hortelano(*2), Oscar Martnez(*2), Giuliano Vescovi(*3), Rafal Ciechonski(*3), and Olga Kryliouk(*4) (*1)Inst. Jaume Almera, C.S.I.C. , Barcelona, Spain, (*2)Dept. Fisica Materia Condensada, Univ. of Valladolid, Valladolid, Spain, (*3)GLO AB, Lund, Sweden, and (*4)GLO-USA, Sunnyvale, CA, United States of America

MoP-PR-9 Environmental sensitivity of GaN nanowire photodetectors

*Martien Ilse Den hertog(*1), Fernando Gonz leza Posada(*2), Rudeesun Songmuang(*1), and Eva Monroy(*2) (*1)Institut N el-CNRS, BP 166, 38042 Grenoble Cedex e 9, France and (*2)CEA-CNRS Group NPSC, INAC-SP2M, CEA-Grenoble, 38054 Grenoble Cedex 9, France

MoP-PR-15 Fine optical spectroscopy of the 3.45 eV emission line in GaN nanowires
Diane Sam-Giao(*1), Julien Renard(*2), Rafael Mata(*3), Gabriel Tourbot(*1,*4), Bruno Daudin(*1), Andrzej Wysmolek(*5), and *Bruno Gayral(*1) (*1)INAC-SP2M, CEA Grenoble, France, (*2)Department of Physics and Astronomy, University of British Columbia, Canada, (*3)Materials Science Institute, University of Valencia, Spain, (*4)CEA-LETI, France, and (*5)Faculty of Physics, University of Warsaw, Poland

MoP-PR-10 Advanced X-ray diffraction of nitride wires

*J. Eymery(*1), D. Salomon(*1,*2), C. Durand(*1), O. Robach(*3), and V. Favre-Nicolin(*3) (*1)CEA-CNRS-UJF group Nanophysics and semiconductors, SP2M, UMR-E CEA / UJF-Grenoble 1, INAC, Grenoble, France, (*2)CEA-Leti, MINATEC campus,17 rue des Martyrs, 38054 Grenoble, France, and (*3)NRS, SP2M, UMR-E CEA / UJF-Grenoble 1, INAC, Grenoble, France

MoP-PR-11 III-N nanowire ensembles as optochemical sensor platform

*J rg Teubert(*1), Pascal Becker(*1), Jens Wallys(*1), o Svenja van Heesvijk(*1), Florian Furtmayr(*1), J rg o Sch rmann(*1), Gesche M ntze(*1), Jan M Philipps(*1), o u Detlev M Hofmann(*1), Sumit Paul(*2), Andreas Helwig(*2), Gerhard M ller(*2), and Martin Eickhoff(*1) u (*1)I. Physikalisches Institut, Justus-Liebig-Universit t a Giessen, Germany and (*2)EADS Innovation Works, Germany

MoP-PR-16 Tip enhanced Raman scattering GaN/InGaN core shell nanorods

of

single

*Markus R. Wagner(*1), Emanuele Poliani(*1), Axel R mer(*1), Gordon Callsen(*1), Axel Hoffmann(*1), Jano ina Maultzsch(*1), Juan S. Reparaz(*2), Martin Mandl(*3), Werner Bergbauer(*3), and Martin Strassburg(*3) (*1)Technical University of Berlin, Germany, (*2)Catalan Institute of Nanotechnology, Spain, and (*3)OSRAM Opto Semiconductors GmbH, Germany

MoP-PR-12 Screw dislocations in GaN nanocolumns

*Ben Hourahine(*1), Simon Kraeusel(*1), Ilya Nikiforov(*2), Traian Dumitrica(*2), B lint Aradi(*3), and a Thomas Frauenheim(*3) (*1)Department of Physics, SUPA, University of Strathclyde, United Kingdom, (*2)Department of Mechanical Engineering, University of Minnesota, United States of America, and (*3)BCCMS, Universit t Bremen, Germany u

MoP-PR-17 Effects of barrier thickness on electronic structures of stacked InGaN quantum dot grown on semipolar plane
*Yen-Ju Lin, Kuo-Bin Hong, and Mao-Kuen Kuo Institute of Applied Mechanics, National Taiwan University, Taiwan

MoP-PR-18 Evaluation of 200-nm GaN Nanopillar Photonic Crystals

*Xu Hui Zhang, Ze Tao Ma, and Hoi Wai Choi Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong

MoP-PR-19 Excitation power dependent photoluminescence of InGaAsN/GaAs T-shaped Quantum Wires Grown by MOVPE
*Pawinee Klangtakai(*1), Sakuntam Sanorpim(*2), Fredrik Karlsson(*3), Per Olof Holtz(*3,*4), and Kentaro Onabe(*1,*4) (*1)Department of Physics, Faculty of Science, Khon Kaen University, Thailand, (*2)Department of Physics, Faculty of Science, Chulalongkorn University, Thailand, (*3)Department of Physics, Chemistry, and Biology (IFM), Linko¨ping University, Sweden, and (*4)Department of Advanced Materials Science, The University of Tokyo, Japan

MoP-PR-24 The source of holes in p-type InxGa1-xN alloys

*Mary Ellen Zvanut(*1), William E. Willoughby(*1), and Dan D. Koleske(*2) (*1)Dept. of Physics, University of Alabama at Birmingham, United States of America and (*2)Sandia National Laboratory, United States of America

MoP-PR-25 Cathodoluminescence Studies of Electron Beam Irradiated GaN:Mg at 10 K

*Matthew R. Phillips(*1), Trevor J. Manning(*1), Christian Nenstiel(*1,*2), Marc Hoffmann(*1,*3), Marie WintrebertFouquet(*4), Mark N. Lockrey(*1), and Axel Hoffmann(*2) (*1)University of Technology, Sydney, Australia, (*2)Technische Universit t Berlin, Germany, (*3)North Carolina a State University, United States of America, and (*4)BluGlass Limited, Australia

MoP-PR-20 Defect activation in MOVPE GaN under low energy electron beam irradiation
*Sami Suihkonen(*1), Henri Nyk nen(*1), Lucasz Kilana ski(*2), and Filip Tuomisto(*2) (*1)Department of Micro- and Nanosciences, Aalto University, Finland and (*2)Department of Applied Physics, Aalto University, Finland

MoP-PR-26 Correlation between turn-on recovery characteristics and deep-level defects in AlGaN/GaN heterostructures
*Yoshitaka Nakano(*1), Yoshihiro Irokawa(*2), Yasunobu Sumida(*3), Shuichi Yagi(*3), and Hiroji Kawai(*3) (*1)Chubu University, Japan, (*2)National Institute for Materials Science, Japan, and (*3)POWDEC, Japan

MoP-PR-21 Optical properties of highly doped GaN:Ge

*Christian Nenstiel(*1), Max B gler(*1), S. Fritze(*2), A. u Dadgar(*2), H. Witte(*2), A. Rohrbeck(*2), J. Bl sing(*2), a A. Krost(*2), and Axel Hoffmann(*1) (*1)Institut of solid state state physics, TU Berlin, Germany and (*2)Institut for experimental physics, Otto-vonGuericke-University Magdeburg, Germany

MoP-PR-27 Highly Accurate & Rapid Nondestructive Terahertz Measurement of GaN Carrier Density
*Akihide Hamano(*1), Seigo Ohno(*2,*3), Hiroaki Minamide(*2), Hiromasa Ito(*2), and Yoshiyuki Usuki(*1) (*1)Materials Resarch Laboratory, Furukawa Co., Ltd., Japan, (*2)RIKEN ASI, Japan, and (*3)Department of Physics, Tohoku University, Japan

MoP-PR-22 Vacancy-related complexes in electron-irradiated GaN

*Xuan Thang Trinh(*1), Nguyen Tien Son(*1), Krisztian Sz sz(*2), Adam Gali(*2), Carl Hemmingsson(*1), a Kevin Udwary(*3), Tanya Paskova(*3,*4), J. Isoya(*5), T.Makino(*6), T.Ohshima(*6), Bo Monemar(*1), and Erik Janz n(*1) e (*1)Department of Physics, Chemistry and Biology, Link ping University, Sweden, (*2)Institute for Solid State o Physics and Optics, Wigner Research Center for Physics, Hungarian Academy of Sciences, Hungary, (*3)Kyma Technologies Inc., United States of America, (*4)ECE Department, North Carolina State University, United States of America, (*5)Graduate School of Library, Information and Media Studies, University of Tsukuba, Japan, (*6)Japan Atomic Energy Agency, Japan

MoP-PR-28 Effect of UV irradiation on Ar-plasma etching of GaN

*Yoshitaka Nakano(*1), Keiji Nakamura(*1), Masahito Niibe(*2), Retsuo Kawakami(*3), Noriyoshi Ito(*1), Takuya Kotaka(*2), and Kikuo Tominaga(*3) (*1)Chubu University, Japan, (*2)University of Hyogo, Japan, and (*3)University of Tokushima, Japan

MoP-PR-29 Characterizations of Si diffusion in p-type GaN using novel spin on dopant and annealing technique
*Ming-Lun Lee(*1), Cheng-Ju Hsieh(*1), Vin-Cent Su(*1), Yi-Chi Chen(*1), Yao-Hong You(*1), Po-Hsun Chen(*1), Chieh-Hsiung Kuan(*1), and Yan-Kuin Su(*2) (*1)Graduate Institute of Electronics Engineering, National Taiwan University, Taiwan and (*2)Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Taiwan

MoP-PR-23 Carrier density vs. vacancy defects in bulk ammonothermal GaN

*Filip Tuomisto(*1), Jiri Kujala(*1), and Marcin Zajac(*2) (*1)Department of Applied Physics, Aalto University, Finland and (*2)Ammono Sp. z o. o., Poland

MoP-PR-30 Relation between planar defects and optical properies of InGaN lms
*Zuzanna Liliental-Weber(*1), K. M. Yu(*1), D. F. Ogletree(*1), and S. Bedair(*2) (*1)Lawrence Berkeley National Laboratory, United States of America and (*2)North Carolina State University, Raleigh, United States of America

MoP-PR-38 Efciency analysis of AlInGaN structures for 350 nm emission

*Carsten Netzel, Arne Knauer, and Markus Weyers Ferdinand-Braun-Institut, Leibniz-Institut H chstfrequenztechnik, Germany o f r u

MoP-PR-31 High incorporation of Mg in solution growth GaN crystals

*Jaime A. Freitas, Boris N. Feigelson, and Travis J. Anderson Naval Research Laboratory, United States of America

MoP-PR-39 Local strain distribution in a thick AlN lm grown on a trench-patterned AlN/ -Al2O3 template measured by X-ray microdiffraction
*Khan Thanh Dinh(*1), Jun Kikkawa(*1), Shotaro Takeuchi(*1), Yoshiaki Nakamura(*1,*4), Hideto Miyake(*2), Kazumasa Hiramatsu(*2), Yasuhiko Imai(*3), Shigeru Kimura(*3), and Akira Sakai(*1) (*1)Osaka University, Japan, (*2)Mie University, Japan, (*3)JASRI/SPring-8, Japan, and (*4)PRESTO, JST, Japan

MoP-PR-32 AlN mole fraction dependence of polarization induced hole concentrations in GaN/AlGaN heterostructures
*Toshiki Yasuda(*1), Kouta Yagi(*1), Tomoyuki Suzuki(*1), Tsubasa Nakashima(*1), Masahiro Watanabe(*1), Tetsuya Takeuchi(*1), Satoshi Kamiyama(*1), Motoaki Iwaya(*1), and Isamu Akasaki(*1,*2) (*1)Faculty of Science and Technology, Meijo University, Japan and (*2)Akasaki Research Center, Nagoya University, Japan

MoP-PR-40 Excitonic recombination in homoepitaxially and heteroepitaxially grown aluminum nitride layers
*Christoph Reich(*1), Martin Feneberg(*2), Viola K ller(*3), Arne Knauer(*3), Tim Wernicke(*1), Jessica u Schlegel(*1), Frank Mehnke(*1), Joachim Stellmach(*1), R diger Goldhahn(*2), Markus Weyers(*3), and Michael u Kneissl(*1,*3) (*1)Technische Universit t Berlin, Germany, (*2)Otto-vona Guericke-Universit t, Universit tsplatz 2, Germany, and a a (*3)Ferdinand-Braun-Institut, Germany

MoP-PR-33 Electron beam irradiation impact on stability of nitrides luminescence

*Yana V. Kuznetsova and Maria V. Zamoryanskaya Ioffe Physical-Technical Institute, Russia

MoP-PR-41 Density and temperature dependence of radiative recombination rate in polar AlGaN quantum wells.
*Greg Rupper(*1), Sergey Rudin(*1), and Francesco Bertazzi(*2) (*1)U. S. Army Research Laboratory, Adelphi, Maryland, United States of America and (*2)Politecnico di Torino, Dipartimento di Elettronica, Torino, Italy

MoP-PR-34 Effect of ICP Etching in p-type GaN Schottky Contacts

*Toshifumi Takahashi(*1), Naoki Kaneda(*2), Tomoyoshi Mishima(*2), Kazuki Nomoto(*3), and Kenji Shiojima(*1) (*1)University of Fukui, Japan, (*2)Hitachi Cable Ltd., Japan, and (*3)University of Notre Dame, United States of America

MoP-PR-42 The effect of AlN interlayers thickness on threading dislocations and stress in AlxGa1-xN epilayers grown on GaN
Lin Shang(*1,*2,*3), *Lin Lu(*1,*2,*3), Hui Hui Zhen(*1,*2), She Bing Xu(*1,*2), and Takashi Egawa(*3) (*1)Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of Technology, China, (*2)Research Center of Advanced Materials Science and Technology, College of Material Science and Engineering, Taiyuan University of Technology, China, and (*3)Research Center for Nano-Device and System, Nagoya Institute of Technology, Japan

MoP-PR-36 The direct-indirect band gap crossing in zincblende AlGaN

*R diger Goldhahn(*1), Florian H rich(*1), Marcus u o R ppischer(*2), Christoph Cobet(*2), Norbert Esser(*2), o Thorsten Schupp(*3), Donat Josef As(*3), and Martin Feneberg(*1) (*1)Institute of Experimental Physics, Otto-von-Guericke University, Universit tsplatz 2, Germany, (*2)Leibniza Institute for Analytical Sciences, Germany, and (*3)Department of Physics, University of Paderborn, Germany

MoP-PR-37 Propagation of nanoindentation-induced dislocations in AlN lms

*Yuki Tokumoto(*1), Kentaro Kutsukake(*1,*2), Yutaka Ohno(*1), and Ichiro Yonenaga(*1) (*1)Institute for Materials Research, Tohoku University, Japan and (*2)PRESTO, Japan Science and Technology Agency (JST), Japan

MoP-PR-43 Cathodoluminescence study of optical inhomogenity on Si-doped AlGaN epitaxial layers grown by LP-MOVPE
*Satoshi Kurai(*1), Fumitaka Ushijima(*1), Yoichi Yamada(*1), Hideto Miyake(*2), and Kazumasa Hiramatsu(*2) (*1)Department of Material Science and Engineering, Yamaguchi University, Japan and (*2)Department of Electrical and Electronic Engineering, Mie University, Japan

MoP-PR-48 Optical sectioning of dislocations in GaN: the role of the Eshelby twist
*Juan G. Lozano(*1), Maria P. Guerrero-Lebrero(*2), Akira Yasuhara(*3), Eiji Okunishi(*3), Siyuan Zhang(*4), Colin J. Humphreys(*4), Pedro L. Galindo(*2), and Peter D. Nellist(*1) (*1)Department of Materials, University of Oxford, United Kingdom, (*2)Departamento de Lenguajes y Sistemas Informaticos, Universidad de Cadiz, Spain, (*3)JEOL Ltd, Japan, and (*4)Department of Materials Science and Metallurgy, University of Cambridge, United Kingdom

MoP-PR-44 Predictive Calculations of Defect Properties using Hybrid Exchange DFT: Applications to Optically Active Impurities in AlN
*Benjamin E Gaddy(*1), Ramon Collazo(*1), Jinqiao Xie(*2), Zachary Bryan(*1), Ronny Kirste(*1), Marc Hoffmann(*1), Rafael Dalmau(*2), Baxter Moody(*2), Yoshinao Kumagai(*3), Toru Nagashima(*4), Yuki Kubota(*4), Toru Kinoshita(*4), Akinori Koukitu(*4), Zlatko Sitar(*1), and Douglas L Irving(*1) (*1)Dept. of Materials Science and Engineering, North Carolina State Univ, United States of America, (*2)HexaTech, Inc., United States of America, (*3)Dept. of Applied Chemistry, Tokyo Univ. of Agric. and Tech., Japan, and (*4)Tsukuba Research Laboratory, Tokuyama Corp., Japan

MoP-PR-49 A study of trench defects in InGaN/GaN quantum wells

*Fabien C-P. Massabuau(*1), Linh Trinh-Xuan(*2), Suman-L Sahonta(*1), Menno J. Kappers(*1), Colin J. Humphreys(*1), and Rachel A. Oliver(*1) (*1)Department Materials Science and Metallurgy, University of Cambridge, United Kingdom and (*2)Ecole Centrale de Lyon, Ecully, France

MoP-PR-50 Coupled cathodoluminescence and transmission electron microscopy performed on InGaN quantum wells
*Guillaume Perillat-Merceroz(*1), J r me Napierala(*1), eo Lise Lahourcade(*1), Duncan T.L. Alexander(*1,*2), Pierre Stadelmann(*2), C cile Hebert(*2), and Nicolas Grande jean(*1) (*1)Institute of Condensed Matter Physics (ICMP), EPFL, Lausanne, Swiss and (*2)Interdisciplinary Center of Electron Microscopy (CIME), EPFL, Lausanne, Swiss

MoP-PR-45 Refractive index and Emission Properties of Rhombohedral Boron Nitride Epitaxial Films
*Nebiha Ben Sedrine(*1,*2), Eduardo Antunez de mayolo(*1), Mengyao -Y Xie(*1), Mikhail Chubarov(*1), Hans Arwin(*1), Anne Henry(*1), and Vanya Darakchieva(*1) (*1)1Department of Physics, Chemistry and Biology, Link ping University, Sweden and (*2)Instituto Teco nológico e Nuclear and Instituto Superior T cnico, e Universidade T cnica de Lisboa, Portugal e

MoP-PR-51 GaN strain state determination by XRD and its impact on alloy content evaluation
*Fabrice Oehler, Mary E. Vickers, Menno J. Kappers, Colin J. Humphreys, and Rachel A. Oliver Dpt of Materials Science and Metallurgy, University of Cambridge, United Kingdom

MoP-PR-46 Performance Enhancement of Ultraviolet LightEmitting Diodes with Selected Silicon Doping in the AlGaN Barriers
*Yu-Hsuan Lu(*1), Yi-Keng Fu(*2), Yan-Kuin Su(*1,*3), Shyh-Jer Huang(*1), Rong Xuan(*2), Ying-Chih Chen(*1), Ming-Yueh Chuang(*1), and Manfred. H. Pilkuhn(*1) (*1)Department of Electrical Engineering, Institute of Microelectronics, National Cheng Kung University, Taiwan, (*2)Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Taiwan, and (*3)Department of Electronic Engineering, Kun-Shan University, Taiwan

MoP-PR-52 Synchrotron radiation x-ray topography of bulk GaN and homoepitaxial GaN lms
*Sakari Sintonen(*1), Sami Suihkonen(*1), Olli Svensk(*1), Markku Sopanen(*1), Harri Lipsanen(*1), Turkka O Tuomi(*1), Marcin Zajac(*2), and Carsten Paulmann(*3) (*1)Department of Micro and Nanosciences, Aalto University School of Electrical Engineering, Finland, (*2)Ammono Sp.zo.o., Poland, and (*3)HASYLAB-DESY, Germany

MoP-PR-47 Electrochemical Potentiostatic Activation for Improvement of Internal Quantum Efciency in 380nm Ultraviolet-Light Emitting Diodes
*Jung Ju Lee(*1), Wael Z. Tawk(*1), Ju Hui Song(*1), Seung Bae Yang(*1), Hyo Won Seo(*1), Young Bu Moon(*2), Tak Jung(*3), Seong Ran Jun(*3), and June Key Lee(*1) (*1)Interdisciplineary Program of Photonics Engineering, Chonnam University, Republic of Korea, (*2)THELEDS, Inc, Republic of Korea, and (*3)Korea Photonics Technology Institute, Republic of Korea

MoP-PR-53 Trench defects and threading dislocations in IIInitride structures investigated using scanning electron microscopy
*Jochen Bruckbauer(*1), G. Naresh-Kumar(*1), SumanLata Sahonta(*2), Paul R. Edwards(*1), Menno J. Kappers(*2), Colin J. Humphreys(*2), Rachel A. Oliver(*2), Carol Trager-Cowan(*1), and Robert W. Martin(*1) (*1)Department of Physics, University of Strathclyde, United Kingdom and (*2)Department of Materials Science and Metallurgy, University of Cambridge, United Kingdom

MoP-PR-58 The correlation between the morphology of threading dislocations and the origin of high-resistivity GaN
Hui Hui Zhen(*1,*2), *Lin Lu(*1,*2), Lin Shang(*1,*2), She Bing Xu(*1,*2), and Bo Shen(*3) (*1)Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China, (*2)Research Center of Advanced Materials Science and Technology, College of Material Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, China, and (*3)State Key Laboratory of Articial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China

MoP-PR-54 Gallium nitride thin layer crystal orientation uctuation evaluated by Electron Backscattered Diffraction
*Hirobumi Morita(*1) and Takashi Egawa(*2) (*1)Nagoya Institute of Technology, Japan and (*2)Nagoya Institue of Technology, Japan

MoP-PR-59 Recent development in Electron Energy Loss spectroscopy

*Alan Maign e Gatan Inc., Japan

MoP-PR-55 Polarity determination of III-nitrides by X-ray photoelectron spectroscopy

*Daria Skuridina(*1), Duc Van Dinh(*1), Markus Pristovsek(*1), Marc Hoffmann(*2), Zlatko Sitar(*2), Michael Kneissl(*1), and Patrick Vogt(*1) (*1)Institute of Solid State Physics, Technische Universitaet Berlin, Germany and (*2)Department of Materials Science and Engineering, North Carolina State University, United States of America

MoP-PR-61 Current-controlled negative differential resistance induced by Gunn-type instability and boundaryenhanced momentum relaxation of longitudinal optical phonons in GaN
Nan Ma(*1), *Bo Shen(*1), Liwu Lu(*1), Fujun Xu(*1), Lei Guo(*1), Xinqiang Wang(*1), Zhihong Feng(*2), Shaobo Dun(*2), and Bo Liu(*2) (*1)State Key Laboratory of Articial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China and (*2)National Key Laboratory of Application Specic Integrated Circuit, Hebei Semiconductor Research Institute, Shijiazhuang, China

MoP-PR-56 Structural characterization of wet-etched quaternary InAlGaN barrier HEMT structure

*T Brazzini(*1), M J Tadjer(*1), Z Gacevic(*1), S Pandey(*2), A Cavallini(*2), H Behmenburg(*3,*4), C Giesen(*4), M Heuken(*3,*4), and F Calle(*1) (*1)Dpto. Ingeniera Electrónica and Instituto de Sistemas Optoelectrónicos y Microtecnologa, Uni versidad Polit cnica de Madrid, Madrid, Spain, (*2)Dee partment of Physics, University of Bologna, Bologna, Italy, (*3)GaN Device Technology,RWTH Aachen University, Aachen, Germany, and (*4)AIXTRON SE, Kaiserstr. 98, Herzogenrath, Germany

MoP-PR-62 Direct observation of leakage current path in nGaN by current-AFM

*Bumho Kim(*1), Dae Young Moon(*2), Sung hyun Park(*3), Sewoung Oh(*3), Gun-Do Lee(*3), Yasushi Nanishi(*2,*4), and Euijoon Yoon(*1,*2,*3) (*1)Advanced Institutes of Convergence Technology, Seoul National University, Republic of Korea, (*2)WCU Hybrid Materials Program, Department of Materials Science and Engineering, Seoul National University, Republic of Korea, (*3)Department of Materials Science and Engineering, Seoul National University, Republic of Korea, and (*4)Department of Photonics, Ritsumeikan University, Japan

MoP-PR-57 Anisotropic in-plane strain in c-plane GaN on sapphire substrates

*Xingbin Li School of Physics, Peking University, China

MoP-PR-63 Electrical investigation of band-gap states in thicker InGaN lms

*Yoshitaka Nakano(*1), Mickael Lozach(*2), Liwen Sang(*2), and Masatomo Sumiya(*2) (*1)Chubu University, Japan and (*2)National Institute for Materials Science, Japan

MoP-PR-64 Magnetic Properties of MOVPE-grown GaMnN and Mn-Related Nanostructures Formed on Its Surface
Hiroto Oomae, *Kazuhide Kumakura, Yoshiharu Krockenberger, and Hideki Yamamoto NTT Basic Research Laboratories, NTT Corporation, Japan

MoP-ED-5 Fabrication of AlInN/GaInN MIS heterostructure eld-effect transistors

*Kazuya Ikeda(*1), Yasuhiro Isobe(*1), Hiromichi Ikki(*1), Kimiyasu Ide(*1), Motoaki Iwaya(*1), Tetsuya Takeuchi(*1), Satoshi Kamiyama(*1), Isamu Akasaki(*1,*3), and Hiroshi Amano(*2,*3) (*1)Faculty of Science and Technology, Meijo University, Japan, (*2)Graduate School of Engineering, Nagoya University, Japan, and (*3)Akasaki Research Center, Nagoya University, Japan

MoP-PR-65 Observation of room temperature ferromagnetism in Ga decient GaN epitaxial lms

*Basanta Roul(*1,*2), Mahesh Kumar(*1,*2), Mohana K Rajpalke(*1), Thirumaleshwara N Bhat(*1), A T Kalghatgi(*2), and S B Krupanidhi(*1) (*1)Materials Research Centre, Indian Institute of Science, India and (*2)Central Research Laboratory, Bharat Electronics, India

MoP-ED-6 Al(In)N/GaN HEMTs grown on sapphire substrates by MOCVD

*S.B. Dun, Y.L. Fang, D. Xing, B. Liu, J.Y. Yin, B.C. Sheng, T.T. Han, Z.Z. He, S.J. Cai, and Z.H. Feng Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, China

MoP-PR-66 Bulk above-room-temperature ferromagnetism in (Ga,Cr)N

*Praveen Suggisetti(*1,*2), Tarkeshwar Patil(*1,*2), Ramabhadra Rao Adari(*1,*2), Debashree Banerjee(*1,*2), Dipankar Saha(*1,*2), and Swaroop Ganguly(*1,*2) (*1)Department of Electrical Engineering, IIT Bombay, India and (*2)Centre of Excellence in Nanoelectronics, India

MoP-ED-7 ZrO2/InAlN/GaN MOSHFETs with InAlN barrier of different compositions

*Dagmar Gregusova(*1), Kristina Husekova(*1), Roman Stoklas(*1), Michal Blaho(*1), Michal Jurkovic(*1), JeanFrancois Carlin(*1,*2), Nicolas Grandjean(*2), and Peter Kordos(*1) (*1)Institute of Electrical Engineering Slovak Academy of Sciences, Bratislava, Slovakia and (*2)Institute of Quantum Electronics and Photonics, EPFL, Lausanne, The west Bank and Gaza Strip

MoP-ED-1 Pits Related to Thermal Stability of AlInN/GaN Heterostructures

*Arata Watanabe, Kentaro Mori, Ryuhei Oda, Dennis christy Peter raj, and Takashi Egawa Research Center for Nano-Device and System, Nagoya Institute of Technology, Japan

MoP-ED-2 Nanoribbon-based Ohmic Contact Technology in InAlN/GaN Transistors

*Mohamed Azize(*1), Omair Irfan Saadat(*1), Shiping Guo(*2), and Tomas Palacios(*1) (*1)EECS,MIT, Cambridge, United States of America and (*2)IQE RF LLC, United States of America

MoP-ED-8 Correlation between threading dislocation density and sheet resistance of PAMBE-grown AlGaN/AlN/GaN heterostructures
*Stephen W Kaun(*1), Man hoi Wong(*2), Baishakhi Mazumder(*1), Umesh K Mishra(*2), and James S Speck(*1) (*1)Materials Department, University of California, Santa Barbara, United States of America and (*2)Department of ECE, University of California, Santa Barbara, United States of America

MoP-ED-3 Effects of surface treatment on InAlN investigated by X-ray photoelectron spectroscopy

*Masamichi Akazawa and Takuma Nakano RCIQE, Hokkaido University, Japan

MoP-ED-9 Reliability evaluation of ALD-Al2O3 on n-type GaN

*Daigo Kikuta, Tetsuo Narita, Tsutomu Uesugi, and Tetsu Kachi Toyota Central R&D Labs., Inc., Japan

MoP-ED-4 Investigation of Al1-xInxN barrier ISFET structures with GaN capping on silicon substrates for pH detection
*Tommaso Brazzini, Ana Maria Bengoechea-Encabo, and Fernando Calle Dpto. Ingeniera Electrónica and Instituto de Sistemas Optoelectrónicos y Microtecnologa ETSI Telecomunicación, Universidad Polit cnica de e Madrid, Spain

MoP-ED-10 Analysis of AlGaNGaN HFET Current Collapse Recovery Process

*Yusuke Kio, Taishi Hosokawa, Yusuke Ikawa, Jin-Ping Ao, and Yasuo Ohno Institute of Technology and Science, The University of Tokushima, Japan

MoP-ED-11 Electrical properties of Unintentionally-doped channel on Carbon doped GaN for high performance AlGaN/GaN HFET
*Jong Hoon Shin, Young Shin Eum, Jae Moo Kim, KwangChoong Kim, and Tae Hoon Jang IGBT part, System IC R&D, LG Electronics, Republic of Korea

MoP-ED-18 Analysis of lags and current collapse in sourceeld-plate AlGaN/GaN HEMTs

*Hideyuki Hanawa, Hiraku Onodera, and Kazushige Horio Shibaura Institute of Technology, Japan

MoP-ED-12 Avalanche Breakdown Design Parameters in GaN

*Zhongda Li, Vipindas Pala, and T. Paul Chow Rensselaer Polytechnic Institute, United States of America

MoP-ED-19 Electron Detrapping in AlGaN/GaN High Electron Mobility Transistors Induced by High Electrical Field
Lihua Fu, Weizong Xu, *Hai Lu, Dunjun Chen, Rong Zhang, and Youdou Zheng School of Electronic Science and Engineering, Nanjing University, China

MoP-ED-13 Delay Time Analysis of Graded Gate Field-Plate AlGaN/GaN HEMTs Using Monte Carlo Technique
*Kazuya Hara, Takuya Toshima, Shinsuke Hara, and Hiroki I. Fujishiro Department of Applied Electronics, Tokyo University of Science, Japan

MoP-ED-20 Reverse leakage mechanism of Schottky barrier diodes with vertical geometry fabricated on bulk GaN substrate
Yong Lei, *Hai Lu, Dongsheng Cao, Dunjun Chen, Rong Zhang, and Youdou Zheng School of Electronic Science and Engineering, Nanjing University, China

MoP-ED-14 Evaluation of the initial stage of formation for Ti/Al ohmic contacts by using photoresponse method
Katsuaki Demise(*1), Hideo Yokohama(*2), Gako Araki(*2), and *Kenji Shiojima(*1) (*1)University of Fukui, Japan and (*2)Optorans, Japan

MoP-ED-21 Effect of substrate bias on forward and reverse characteristics in AlGaN/GaN Schottky barrier diode on Si substrate
Meng-Ju She, Yan-Lun Chen, Shih-En Yeh, Hsuan-Wei Huang, and *Yue-Ming Hsin National Central University, Taiwan

MoP-ED-15 Light Irradiation Effect on Current Collapse of AlGaN/GaN HEMTs on Si

*Takuya Joka, Akio Wakejima, and Takashi Egawa Nagoya Institute of Technology, Japan

MoP-ED-22 High-frequency performance of AlGaN channel HEMTs

*Takuma Nanjo, Akifumi Imai, Yosuke Suzuki, Hiroyuki Okazaki, Muneyoshi Suita, Yuji Abe, Eiji Yagyu, and Hiroshi Ohji Mitsubishi Electric Corporation, Advanced Technology R & D Center, Japan

MoP-ED-16 Polarization engineering of AlxGa1-xN/GaN High Electron Mobility Transistors

*Stephanie Rennesson(*1,*2), Magdalena Chmielowska(*1), Sebastien Chenot(*1), and Yvon Cordier(*1) (*1)CRHEA-CNRS, Valbonne, France and (*2)Physics Department, University of Nice-Sophia Antipolis, Nice, France

MoP-ED-23 High Speed Switching Performance of DepletionMode AlGaN/GaN HEMTs on Si Substrate with Low On-Resistance
*Kentaro Chikamatsu(*1), Minoru Akutsu(*1), Norikazu Ito(*1), Tetsuya Fujiwara(*1), Junichi Kashiwagi(*1), Lei Wang(*1), Masashi Kubota(*1,*2), and Ken Nakahara(*1) (*1)ROHM Co., Ltd.,, Japan and (*2)RIKEN Advanced Science Institute, Japan

MoP-ED-17 Comparison between semiconductor-electrolyte and semiconductor-metal Schottky junctions using AlGaN/GaN photoelectrochemical electrode
*Akihiro Nakamura(*1), Masakazu Sugiyama(*1), Yoshiaki Nakano(*2), and Katsushi Fujii(*2,*3) (*1)Department of Electrical Engineering and Information Systems, School of Engineering, the University of Tokyo, Japan, (*2)Research Center for Advanced Science and Technology, the University of Tokyo, Japan, and (*3)Global Solar+ Initiative, the University of Tokyo, Japan

MoP-ED-24 Equivalent circuit model for GIT bi-directional switch in diode mode operation
*Toshihide Ide(*1), Mitsuaki Shimizu(*1), Xu Quiang Shen(*1), Tatsuo Morita(*2), Tetsuzo Ueda(*2), and Tsuyoshi Tanaka(*2) (*1)Advanced Industrial Science and Technology, Japan and (*2)Panasonic, Japan

MoP-ED-25 AlN-actuated non-contact micromechanical switches for radio frequency applications

*Vadim Lebedev(*1), Nicola Heidrich(*1), Wilfried Pletschen(*1), Jakob Hees(*1), Ram Ekwal Sah(*1), Brian Raynor(*1), Volker Cimalla(*1), Christoph Nebel(*1), and Oliver Ambacher(*1,*2) (*1)Fraunhofer Institute for Applied Solid State Physics, Germany and (*2)IMTEK, University of Freiburg, Germany

J1-5 10:15 - 10:30 Nanoscopic PL properties in green emitting InGaN single quantum well on {20-21} GaN substrate probed by scanning near eld optical microscopy
*Akio Kaneta(*1), Yoon Seok Kim(*1), Mitsuru Funato(*1), Yoichi Kawakami(*1), Yohei Enya(*2), Takashi Kyono(*2), Masaki Ueno(*2), and Takao Nakamura(*2) (*1)Department of Electronic Science and Engineering, Kyoto University, Japan and (*2)Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., Japan

October 16

Joint Session J1 (GR,OD,PR)

October 16

Semi/non-polar J-I
Room : Main Hall 9:00 - 10:30 J1-1 (invited) 9:00 - 9:30 Progress in nonpolar and semipolar GaN materials and devices
*James S Speck Materials Department, University of California, Santa Barbara, United States of America

Parallel Session ED1

High Power Application

Room : Small Hall 9:00 - 10:30 ED1-1 (invited) 9:00 - 9:30 GaN Power Devices for Future Automotive Systems
Masakazu Kanechika Toyota Central R&D Labs., Inc.

J1-2 9:30 - 9:45 Study of optical loss and InGaN QW electronic spectrum
*Dmitry Sizov, Rajaram Bhat, and Chung-En Zah Corning Incorporated, One Science Center Dr., Painted Post, United States of America

ED1-2 9:30 - 9:45 First demonstration of high performance 1kV AlGaN/GaN HEMTs on Si and their use in the drive of both an induction motor and a permanent magnet motor
*Srabanti Chowdhury, Don Kebort, Jesus Magadia, Dietrich Graumann, Nick Fichtenbaum, Jim Honea, Yifeng Wu, Primit Parikh, and Umesh Mishra Transphorm Inc., California, United States of America

J1-3 9:45 - 10:00 Optical polarization properties in semipolar (11 01) InGaN/GaN multiple quantum well on a patterned Si Substrate
*Maki Kushimoto(*1), Tomoyuki Tanikawa(*1), Yoshio Honda(*1), Masahito Yamaguchi(*1), and Hiroshi Amano(*1,*2) (*1)Graduate School of Engineering, Nagoya University, Japan and (*2)Akasaki Research Center, Nagoya University, Japan

ED1-3 9:45 - 10:00 Over-Temperature Protection Integrated Circuit for GaN Smart Power ICs
*Alex Man Ho Kwan, Yue Guan, Xiaosen Liu, and Kevin J. Chen Department of Electronic and Communications Engineering, Hong Kong University of Science and Technology, Hong Kong

J1-4 10:00 - 10:15 InGaN lasers on (20-21) GaN: Morphology, luminescence homogeneity and threshold
*Tim Wernicke(*1), Simon Ploch(*1), Jens Rass(*1), Lukas Schade(*2), Markus Pristovsek(*1), Ulrich Schwarz(*2), Markus Weyers(*3), and Michael Kneissl(*3) (*1)Technische Universit t Berlin, Institute of Solid State a Physics, Germany, (*2)Universit t Freiburg, IMTEK, Gera many, and (*3)Ferdinand-Braun-Institut, Leibniz-Institut f r u H chstfrequenztechnik, Germany o

ED1-4 10:00 - 10:15 Design and Simulation of Novel Enhancement Mode 5-20kV GaN Vertical Superjunction HEMTs for Smart Grid Applications
*Zhongda Li and T. Paul Chow Rensselaer Polytechnic Institute, United States of America

ED1-5 10:15 - 10:30 Improved electrical characteristics of AlGaN/GaN Flash MOSHFET by gate stack engineering for power device applications
*Bongmook Lee, Casey J Kirkpatrick, Young-Hwan Choi, Narayanan Ramanan, Alex Q Huang, and Veena Misra Department of Electrical and Computer Engineering, North Carolina State University, United States of America

October 16

Joint Session J2 (GR,OD,PR)

J2-5 12:15 - 12:30 Engineering nitride based photonic crystal light emitters
*Dominik Heinz(*1), Robert Anton Richard Leute(*1), Thomas Wunderer(*3), Yijia Li(*1), Tobias Meisch(*1), Klaus Thonke(*2), and Ferdinand Scholz(*1) (*1)Institute of Optoelectronics, Ulm University, Germany, (*2)Institute of Quantum Matter/ Semiconductor Physics Group, Ulm University, Germany, and (*3)now at PARC, Palo Alto, CA, United States of America

Semi/non-polar J-II
Room : Main Hall 11:00 - 12:30 J2-1 (invited) 11:00 - 11:30 Optical Polarization Anisotropy Study of Semipolar GaN-based LEDs
*Shi You, Liang Zhao, Theeradetch Detchprohm, and Christian Wetzel Smart Lighting Engineering Research Center, Future Chip Constellation,Department of Physics,Applied Physics and Astronomy, Rensselaer Polytechnic Institute, United States of America

October 16

Parallel Session ED2

Normally-Off Transistor
Room : Small Hall 11:00 - 12:30 ED2-1 (invited) 11:00 - 11:30 Enhancement-mode AlGaN/GaN MISHEMTs with uorinated high- LaLuO3 gate dielectric
*Shu Yang(*1), Sen Huang(*1), Qingtai Zhao(*2), and Kevin J. Chen(*1) (*1)Hong Kong University of Science and Technology, Hong Kong and (*2)Peter Gr nberg Institute (PGI-9), u Forschungszentrum J lich, Germany u

J2-2 11:30 - 11:45 Development of p-type electrode for m-plane GaN

*Mitsuaki Oya and Toshiya Yokogawa Device Module Development Center, Panasonic Corporation, Japan

J2-3 11:45 - 12:00 Inuence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells
*Stacia Keller(*1), Robert M Farrell(*2), Michael Iza(*2), Yutaka Terao(*2), Nathan Young(*2), Umesh K Mishra(*1), Shuji Nakamura(*2), Steven P Denbaars(*1,*2), and James S Speck(*2) (*1)ECE Department, University of California Santa Barbara, United States of America and (*2)Materials Department, University of California Santa Barbara, United States of America

ED2-2 11:30 - 11:45 High-Temperature Characteristics in RecessedGate AlGaN/GaN E-mode HFETs with EnhancedBarrier Structures
*Narihiko Maeda(*1), Masanobu Hiroki(*1), Satoshi Sasaki(*2), and Yoichi Harada(*2) (*1)NTT Photonics Laboratories, Japan and (*2)NTT Basic Research Laboratories, Japan

J2-4 12:00 - 12:15 Improved emission efciency of a-plane GaN light emitting diodes with silica nano-spheres integrated into a-plane GaN buffer layer
*Sung hyun Park(*1), Jeonghwan Jang(*2), Daeyoung Moon(*2), Kisu Joo(*3), Duck-Jae You(*3), Jinsub Park(*4), Jimmy Xu(*2,*5), Yasushi Nanishi(*2,*6), and Euijoon Yoon(*1,*2,*3,*7) (*1)Department of Materials Science and Engineering, Seoul National University, Republic of Korea, (*2)WCU Hybrid Materials Program, Department of Materials Science and Engineering, Seoul National University, Republic of Korea, (*3)Department of Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Republic of Korea, (*4)Department of Electronic Engineering, Hanyang University, Republic of Korea, (*5)Department of Engineering, Brown University, United States of America, (*6)Department of Photonics, Ritsumeikan University, Japan, and (*7)Energy Semiconductor Research Center, Advanced Institutes of Convergence Technology, Seoul National University, Republic of Korea

ED2-3 11:45 - 12:00 Selective Thermal Oxidized Gate Structure Embedded in Enhancement-Mode AlGaN/GaN Hetero-Junction Field-Effect Transistors
*Tetsuya Fujiwara(*1), Minoru Akutsu(*1), Norikazu Ito(*1), Kentaro Chikamatsu(*1), Junichi Kashiwagi(*1), Wang Lei(*1), Masashi Kubota(*1,*2), Ken Nakahara(*1), Shintarou Kodama(*3), and Masaaki Kuzuhara(*3) (*1)Research and Development Headquarters, ROHM Co., Ltd., Japan, (*2)Correlated Electron Research Group, RIKEN Advanced Science Institute, Japan, and (*3)Depertment of Electrical and Electronics Engineering, University of Fukui, Japan

ED2-4 Polarization Engineered GaN/InAlN/AlN/GaN HEMT

12:00 - 12:15 Normally-Off

M. Jurkovic(*1), D. Gregusova(*1), S. Hascik(*1), M. Blaho(*1), K. Cico(*1,*4), V. Palankovski(*2), J.-F. Carlin(*3), N. Grandjean(*3), and *J. Kuzmik(*1) (*1)Slovak Academy of Sciences, Slovakia, (*2)Technical Uni. Vienna, Austria, (*3)EPFL Lausanne, Swiss, and (*4)Alcatel-Thales III-V Laboratory, France

ED2-5 12:15 - 12:30 Suppression of Gate leakage Current in NormallyOff Mode p+-InGaN/AlGaN/GaN HEMTs by inserting Thin GaN Layer
*Hiroyuki Yamada(*1), Shigeru Kishimoto(*1), Fumihiko Nakamura(*2), and Takashi Mizutani(*1) (*1)Nagoya University, Quantum Engineering, Japan and (*2)POWDEC K.K., Japan

GR1-5 15:15 - 15:30 The coalescence growth of high-quality GaN crystals using the Na ux method
*Masayuki Imanishi, Kosuke Murakami, Hiroki Imabayashi, Hideo Takazawa, Yuma Todoroki, Daisuke Matsuo, Mihoko Maruyama, Mamoru Imade, Masashi Yoshimura, and Yusuke Mori Department of Electrical, Electronic and Information Engineering, Osaka University, Japan

October 16

Parallel Session GR1

October 16

Bulk I
Room : Conference Hall 14:00 - 15:30 Room : 204 GR1-1 (invited) 14:00 - 14:30 Bulk GaN crystals grown by Acidic Ammonothermal Technology
*Yutaka Mikawa, Hideo Fujisawa, Kazunori Kamada, Makoto Saito, Shinichiro Kawabata, Yuji Kagamitani, and Toshinari Fujimori Mitsubishi Chemical Corporation, Japan

Parallel Session OD1

Detectors
14:00 - 15:30 OD1-1 (invited) 14:00 - 14:30 High sensitivity extremely nitride-based heteroeld-effect-transistor-type photosensors
*Mami Ishiguro(*1), Kazuya Ikeda(*1), Masataka Mizuno(*1), Motoaki Iwaya(*1), Tetsuya Takeuchi(*1), Satoshi Kamiyama(*1), and Isamu Akasaki(*1,*2) (*1)Faculty of Science and Technology, Meijo University, Japan and (*2)Akasaki Research Center, Nagoya University, Japan

GR1-2 14:30 - 14:45 High Quality, Low Cost Ammonothermal Bulk GaN Substrates
Dirk Ehrentraut, Rajeev T. Pakalapati, Derrick S. Kamber, Wenkan Jiang, Douglas S. Pocius, Bradley C. Downey, Melvin B. Mclaurin, and *Mark P Develyn Soraa, Inc., United States of America

OD1-2 14:30 - 14:45 AlGaN MSM photodetectors on planar and ELO AlN/sapphire templates for the UV-C spectral region
*Andrea Knigge, Moritz Brendel, Frank Brunner, Sven Einfeldt, Arne Knauer, Viola Kueller, Ute Zeimer, and Markus Weyers Ferdinand-Braun-Institut, Germany

GR1-3 14:45 - 15:00 Properties of High Transparency GaN substrates obtained by ammonobasic technology
*Robert Dwilinski, Roman Doradzinski, Marcin Zajac, Romuald Stankiewicz, and Robert Kucharski AMMONO SA, Poland

OD1-3 14:45 - 15:00 Photo-electricity energy conversion devices based on InGaN lm

*Liwen Sang, Meiyong Liao, Yasuo Koide, and Masatomo Sumiya National Institute for Materials Science, Japan

GR1-4 15:00 - 15:15 Powder synthesis and ammonothermal crystal growth of GaN using Ga metal as a starting material
*Chiaki Yokoyama(*1), Quanxi Bao(*3), Hiromi Sawayama(*1), Takanori Hashimoto(*1), Fukuma Sato(*1), Kouji Hazu(*1), Yuji Kagamitani(*2), Takayuki Ishinabe(*2), Makoto Saito(*2), Rinzo Kayano(*3), Daisuke Tomida(*1), Kun Qiao(*1), Shigefusa f Chichibu(*1), and Tohru Ishiguro(*1) (*1)Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Japan, (*2)Mitsubishi Chemical Corp., Japan, and (*3)Muroran Research Laboratory, The Japan Steel Works, Ltd., Japan

OD1-4 15:00 - 15:15 Back-illuminated AlGaN-based solar-blind ultraviolet p-i-n photodetectors with high quantum efciency
Guosheng Wang, *Hai Lu, Feng Xie, Dunjun Chen, Fangfang Ren, Rong Zhang, and Youdou Zheng School of Electronic Science and Engineering, Nanjing University, China

OD1-5 15:15 - 15:30 Surface Plasmon Enhanced GaN-based Ultraviolet Detector

*Dabing Li(*1), Xiaojuan Sun(*1,*2), Hang Song(*1), Yiren Chen(*1,*2), Hong Jiang(*1), Guoqing Miao(*1), and Zhiming Li(*1) (*1)State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, China and (*2)Graduate University of Chinese Academy of Sciences, China

PR1-4 14:45 - 15:00 Purely radiative exciton recombination in (Al,Ga)N/GaN quantum wells grown on the afacet of GaN crystals
*Pierre Corfdir(*1,*2), Am lie Dussaigne(*1), Henryk Teise seyre(*3,*4), Tadeusz Suski(*3), Izabella Grzegory(*3), Pierre Lefebvre(*5,*6), Etienne Giraud(*1), Jean-Daniel Gani` re(*1), Nicolas Grandjean(*1), and Beno t Dee n veaud(*1) (*1)Institute of Condensed Matter Physics, Ecole Polytechnique F d rale de Lausanne, Swiss, (*2)Cavendish Laborae e tory, University of Cambridge, United Kingdom, (*3)Institute of High Pressure Physics, Polish Academy of Sciences, Poland, (*4)Institute of Physics, Polish Academy of Sciences, Poland, (*5)CNRS, Laboratoire Charles Coulomb, France, and (*6)Universit Montpellier 2, Laboratoire Charles e Coulomb, France

October 16

Parallel Session PR1

Semi/non-polar P-I
Room : Main Hall 14:00 - 15:30 PR1-1 14:00 - 14:15 Semipolar Long Wavelength Light Emitting Diodes Grown on Stress Relaxed InGaN Buffer Layers
*Ingrid L. Koslow(*1), Matthew T. Hardy(*1), Po shan Hsu(*1), Michael Cantore(*1), Stuart Brinkley(*2), Po-Yuan Dang(*3), Yuh-Renn Wu(*3), Erin C. Young(*1), Feng Wu(*1), Alexey Romanov(*4), Shuji Nakamura(*1), Steven P. Denbaars(*1,*2), and James S. Speck(*1) (*1)Department of Materials, University of California Santa Barbara, United States of America, (*2)Department of Electrical and Computer Engineering, University of California Santa Barbara, United States of America, (*3)Institute of Photonics and Optoelectronics, National Taiwan University, Taiwan, and (*4)Ioffe Physico-Technical Institute Russian Academy of Science, Russia

PR1-5 15:00 - 15:15 M-plane InAlN/GaN Multiple Quantum Wells

*Catherine Bougerol(*1), Christophe Durand(*2), Florian Godel(*2), Jean-Francois Carlin(*3), Raphael Butte(*3), and Nicolas Grandjean(*3) (*1)Institut Neel -CNRS, France, (*2)INAC-CEA-UJF, France, and (*3)EPFL, Swiss

PR1-6 15:15 - 15:30 Optical and structural characteristics of nonpolar InGaN and InAlN lms grown on ZnO substrates
*Atsushi Kobayashi(*1), Hiroaki Tamaki(*1), Jitsuo Ohta(*1), Masaharu Oshima(*2,*3), and Hiroshi Fujioka(*1,*3) (*1)Institute of Industrial Science, The University of Tokyo, Japan, (*2)Department of Applied Chemistry, The University of Tokyo, Japan, and (*3)CREST, Japan Science and Technology Agency, Japan

PR1-2 14:15 - 14:30 Exciton Dynamics in Semipolar (112 2) InGaN Single Quantum Wells
*Junichi Nishinaka, Takuya Ozaki, Mitsuru Funato, and Yoichi Kawakami Department of Electronic Science and Engineering, Kyoto University, Japan

October 16

Parallel Session PR2

UV Materials
Room : Mid-sized Hall 14:00 - 15:30 PR2-1 (invited) 14:00 - 14:30 Dense excitonic properties of AlGaN ternary alloys
*Yoichi Yamada Department of Materials Science and Engineering, Yamaguchi University, Japan

PR1-3 14:30 - 14:45 Carrier transports in semipolar multiple-quantumwells light-emitting diodes

*Chia-Yen Huang(*1), Yuji Zhao(*2), Qimin Yan(*1), Yoshinobu Kawaguchi(*1), Yu-Renn Wu(*3), Daniel F. Feezell(*1), Chris G. van de Walle(*1), James S. Speck(*1), Steven P Denbaars(*1), and Shuji Nakamura(*1) (*1)Department of Materials, University of California, Santa Barbara, United States of America, (*2)Department of Electrical and Computer Engineering, University of California, Santa Barbara, United States of America, and (*3)Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taiwan

PR2-2 14:30 - 14:45 Exciton ne structure related to spin-exchange interaction in AlN

*Martin Feneberg(*1), Marcus R ppischer(*2), Christoph o Cobet(*2), Norbert Esser(*2), Benjamin Neuschl(*3), Klaus Thonke(*3), Matthias Bickermann(*4), Maria Fatima Romero(*1), and R diger Goldhahn(*1) u (*1)Institute of Experimental Physics, Otto-von-Guericke University Magdeburg, Universit tsplatz 2, Germany, a (*2)Leibniz-Institute for Analytical Sciences, AlbertEinstein-Str. 9, Germany, (*3)Institute of Quantum Matter / Semiconductor Physics Group, 89069 University of Ulm, Germany, and (*4)Leibniz-Institute for Crystal Growth, Max-Born-Str. 2, Germany

October 16

Parallel Session ED3

Insulated-Gate Transistor
Room : Small Hall 14:00 - 15:30 ED3-1 (invited) 14:00 - 14:30 Insulated gate technologies for high-performance GaN transistors
*T. Hashizume(*1,*2), Y. Hori(*1), S. Kim(*1), Z. Yatabe(*1), and M. Akazawa(*1) (*1)Research Center for Integrated QUantum Electronics, Hokkaido University, Japan and (*2)JST-CREST, Japan

PR2-3 14:45 - 15:00 Determination of the deformation potentials in aluminum nitride: Breakdown of the quasicubic approximation in AlN as well as GaN
*Ryota Ishii, Akio Kaneta, Mitsuru Funato, and Yoichi Kawakami Kyoto University, Japan

ED3-2 14:30 - 14:45 Mechanism of PEALD-grown AlN passivation of AlGaN/GaN HEMTs

*Sen Huang, Qimeng Jiang, Shu Yang, Zhikai Tang, and Kevin J. Chen The Hong Kong University of Science and Technology, Hong Kong

PR2-4 15:00 - 15:15 Mid-UV AlGaN Lasers on Bulk AlN Substrates

*N. M. Johnson, B. Cheng, S. Choi, C. L. Chua, C. Knollenberg, J. E. Northrup, M. Teepe, T. Wunderer, and Z. Yang Palo Alto Research Center Inc., United States of America

ED3-3 14:45 - 15:00 High Extrinsic Transconductance with Improved Breakdown Voltage in AlGaN/GaN MISHEMTs using Atomic Layer Deposited HfO2 and Ta2O5
Geok Ing Ng(*1), *Subramaniam Arulkumaran(*2), Maung Bryan(*2), Sahmuganathan Vicknesh(*2), and Siew Chuen Foo(*2) (*1)NOVITAS, School of EEE, Nanyang Technological University, Singapore and (*2)Temasek Laboratories, Nanyang Technological University, Singapore

PR2-5 15:15 - 15:30 Near-band edge optical properties of hexagonal boron nitride
*Aur lie Pierret(*1,*2), e Julien Barjon(*3), Luc Museur(*4), Brigitte Tretout(*5), Andrei Kanaev(*6), Takashi Taniguchi(*7), Kenji Watanabe(*7), Francois Ducastelle(*2), and Annick Loiseau(*2) (*1)CEA-CNRS-UJF group Nanophysique et Semiconducteurs, CEA Grenoble/INAC/SP2M, 17 rue des Martyrs, 38 054 Grenoble, France, France, (*2)ONERA-CNRS - Laboratoire dEtude des Microstructures, UMR 104, 29 avenue de la Division Leclerc BP 72, 92322 Ch&acirctillon cedex, France, France, (*3)Groupe DEtude de la Mati&egravere Condens&eacutee, Univ. Versailles St-Quentin / CNRS, 45 av des Etats-Unis, 78000 Versailles, France, France, (*4)Laboratoire de Physique des Lasers, UMR 7538, Institut Galil&eacutee, Universit Paris 13 / CNRS, 93430 Villetae neuse, France, France, (*5)ONERA - D&eacutepartement Mesures Physiques, 91123 Palaiseau, France, France, (*6)Laboratoire dIng&eacutenierie des Mat&eacuteriaux et des Hautes Pressions, UPR 1311, Institut Galil&eacutee, Universit Paris 13 / CNRS, 93430 Villetaneuse, France, e France, and (*7)National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan, Japan

ED3-4 15:00 - 15:15 Normally-off Insulating-Gate AlInN/GaN/AlGaN/GaN Heterostructure FieldEffect Transistors with a High Threshold Voltage
Hui-Ling Lin(*1), Geng-Yen Lee(*1), and *Jen-Inn Chyi(*1,*2,*3) (*1)Department of Electrical Engineering, National Central University, Taiwan, (*2)Department of Optics and Photonics, National Central University, Taiwan, and (*3)Research Center for Applied Sciences, Academia Sinica, Taiwan

ED3-5 15:15 - 15:30 Improved Electrical properties of AlGaN/GaN MOSHFETs Fabricated by Gate-First Process
*Eiji Miyazaki, Shigeru Kushimoto, and Takashi Mizutani Nagoya University, Quantum Engineering, Japan

October 16

Session TuP

TuP-GR-6 New Model of Fe Diffusion in Highly Resistive FeDoped Buffer Layer for GaN HEMT
*Tetsuro Ishiguro, Atsushi Yamada, Junji Kotani, Norikazu Nakamura, Toshihide Kikkawa, Keiji Watanabe, and Kenji Imanishi Fujitsu Laboratories Ltd., Japan

Poster Session 2
Room : Main Hall 16:00 - 18:00 TuP-GR-1 GaN/AlN/AlInN based HEMTs grown by MOVPE on Si (111) and Si (001)
*Jonas Hennig, J rgen Bl sing, Hartmut Witte, Armin u a Dadgar, and Alois Krost Otto-von-Guericke-University Magdeburg, Germany

TuP-GR-7 Reducing Threading Dislocations in GaN Grown on (111) Si by Double GaN Island Growth Method
*Lung-Chieh Cheng(*1), Hsueh-Hsing Liu(*1), Geng-Yen Lee(*1), and Jen-Inn Chyi(*1,*2,*3) (*1)Department of Electrical Engineering, National Central University, Taiwan, (*2)Department of Electrical Engineering, National Central University, Taiwan, and (*3)Research Center for Applied Sciences, Academia Sinica, Taiwan

TuP-GR-2 Reduction of Threading Dislocation Density in GaN Grown on 200 mm Si (111) Substrate with in-situ Si2H6 Inter-treatment
*Hu Liang(*1), Eric Porter Carlson(*2), Ming Zhao(*1), Jose Ignacio del Agua Borniquel(*3), Sang won Kang(*3), Sung won Jun(*3), Erik Rosseel(*1), Caroline Labbe(*1), and Johan Dekoster(*1) (*1)IMEC, Belgium, (*2)Dow Corning Corporation, United States of America, and (*3)Applied Materials, United States of America

TuP-GR-8 Growth and Optimization of InGaN multiquantum wells on AlN/air distributed Bragg reector on Si substrates
*Tadashi Mitsunari, Yoshio Honda, Masahito Yamaguchi, and Hiroshi Amano Department of Electrical Engineering and Computer Science, Nagoya University, Japan

TuP-GR-3 Modulation of strain states in GaN lms by a thin AlN/GaN super-lattice interlayer grown on Si(110) substrates
*X. Q. Shen, T. Takahashi, H. Kawashima, T. Ide, and M. Shimizu National Institute of Advanced Industrial Science and Technology (AIST), Japan

TuP-GR-9 Development of PVD-AlN Buffer Process for GaNon-Si High Power LED
*Frank M Cerio, Lili Cheng, Adrian Devasahayam, Boris Druz, Balakrishnan Krishnan, and Bill Quinn Veeco Instruments, United States of America

TuP-GR-4 Growth of GaN on Si(111) substrates via a reactive sputter-deposited AlN intermediate layer
*Takaya Yamada(*1), Tomoyuki Tanikawa(*1), Yoshio Honda(*1), Masahito Yamaguchi(*1), and Hiroshi Amano(*1,*2) (*1)Department of Electrical Engineering and Computer Science, Nagoya University, Japan and (*2)Akasaki Research Center, Nagoya University, Japan

TuP-GR-10 Control of Thickness and Composition Variation of AlGaN/GaN on 6 and 8 Substrates Using Multiwafer High-Growth-Rate MOCVD Tool
*Yoshiki Yano(*1), Hiroki Tokunaga(*1), Hayato Shimamura(*2), Yuya Yamaoka(*1), Akinori Ubukata(*1), Toshiya Tabuchi(*1), and Koh Matsumoto(*2) (*1)Electronics Group, Taiyo Nippon Sanso Corporation, Japan and (*2)TN EMC Ltd., Japan

TuP-GR-5 Scalable GaN/Si Processes on Various 6 and 8 inch Substrates

*Dong Seung Lee(*1), Hongwei Li(*1), Seungjae Lee(*1,*2), Bala Krishanan(*1), Jie Su(*1), Jong Hyup Baek(*2), and Ajit Paranjpe(*1) (*1)Veeco Instruments, United States of America and (*2)Korea Photonics Technology Institute, Republic of Korea

TuP-GR-11 Improving crystal quality of GaN grown on Si (111) substrate with a bi-AlN buffer layers
Peng Xiang(*1), Minggang Liu(*1), Yibin Yang(*1), Weijie Chen(*1), Zhiyuan He(*1), Kelvin K. Leung(*2), Xiaobiao Han(*1), Zhisheng Wu(*1), Yang Liu(*1), and *Baijun Zhang(*1) (*1)State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, China and (*2)Department of Electronic and Information Engineering, The Hong Kong Polytechnic University, China

TuP-GR-12 A comparative study on MOVPE InGaN with intermediate In compositions grown on GaN/sapphire template and AlN/Si(111) substrate
*A. Mihara(*1), Y.d. Zheng(*1,*2), D. Hironaga(*1), A. Hashimoto(*1), N. Shigekawa(*3), and A. Yamamoto(*1,*2) (*1)University of Fukui, Japan, (*2)JST-CREST, Japan, and (*3)Osaka City University, Japan

TuP-GR-18 The effect of growth temperature on formation of amorphous SiNx interlayer between AlN and Si (111)
*Pei-Yin Lin, Jr-Yu Chen, Yu-Chang Chen, and Li Chang Department of Materials Science and Engineering, National Chiao Tung University, Taiwan

TuP-GR-13 Improvement of GaN Quality by Maskless Epitaxy of Lateral Overgrowth on 3C-SiC/Si substrates
*Hao Fang(*1), Yoshifumi Takaya(*1), Hideto Miyake(*1), Kazumasa Hiramatsu(*1), Hidetoshi Asamura(*2), Keisuke Kawamura(*2), and Hidehiko Oku(*2) (*1)Mie University, Japan and (*2)Air Water Inc, Japan

TuP-GR-19 Effect of KOH solution temperature on the quality of GaN grown on patterned Si(100) substrate
*Kwadwo Konadu Ansah-Antwi(*1,*2), Soo Jin Chua(*1,*2), Chew Beng Soh(*2), Hailong Hu(*3), and Ze xiang Shen(*3) (*1)Department of Electrical and Computer Engineering, National University of Singapore, Singapore, (*2)Institute of Materials Research and Engineering, Singapore, and (*3)School of Physical and Mathematical Sciences,Nanyang Technological University, Singapore

TuP-GR-14 Inuence of Low Temperature AlN Interlayer on the Breakdown Properties of GaN Grown on Si (111) Substrate
*Zhiyuan He, Yiqiang Ni, Jian Zhong, Yao Yao, Fan Yang, Zhen Shen, Zhisheng Wu, Baijun Zhang, and Yang Liu School of Physics and Engineering, Sun Yat-sen University, China

TuP-GR-20 Crack-free GaN growth and stress induced variations of InGaN/GaN quantum well characteristics on Si substrate
*Chih-Yen Chen, Wei-Lun Chung, Wen-Ming Chang, Chieh Hsieh, Che-Hao Liao, Shao-Ying Ting, Horng-Shyang Chen, Yean-Woei Kiang, and C. C. Yang Institute of Photonics and Optoelectronics, National Taiwan University, Taiwan

TuP-GR-15 GaN growth on Si(111) substrate using AlGaN/AlN multilayer

*Tokio Takahashi(*1), Guanxi Piao(*2), Hiroyuki Kawashima(*1), Teppei Uetake(*1), Yuichi Sakamura(*1), Xu-Qiang Shen(*1), Toshihide Ide(*1), Mitsuaki Shimizu(*1), Yoshiki Yano(*2), Akinori Ubukata(*2), Toshiya Tabuchi(*2), Hiroyuki Sazawa(*3), and Masahiko Hata(*3) (*1)National Institute of Advanced Industrial Science and Technology, Japan, (*2)Taiyo Nippon Sanso, Japan, and (*3)Sumitomo Chemical, Japan

TuP-GR-21 Nucleus and Spiral Growth of N-face GaN (0001) Obtained by Selective-Area Metalorganic Vapor Phase Epitaxy
*Chia-Hung Lin, Tetsuya Akasaka, and Hideki Yamamoto NTT Basic Research Laboratories, Japan

TuP-GR-16 Investigation of Strain-relaxation Characteristics of MOCVD-grown GaN(0001)/AlGaN/AlN/Si(110) by XRD

*Quanzhong Jiang, Duncan W. Allsopp, Chris. R Bowen, and Wang N. Wang Department of Electrical and Electronic Engineering, University of Bath, United Kingdom

TuP-GR-22 Composition dependence of critical thicknesses in GaInN/GaN characterized by in situ X-ray diffraction measurement
*Yasunari Kondo(*1), Daisuke Iida(*1), Toru Sugiyama(*1), Hiroyuki Matsubara(*1), Mihoko Sowa(*1), Motoaki Iwaya(*1), Tetsuya Takeuchi(*1), Satoshi Kamiyama(*1), and Isamu Akasaki(*1,*2) (*1)1Faculty of Science and Technology, Meijo University, Japan and (*2)Akasaki Research Center, Nagoya University, Japan

TuP-GR-17 Growth of GaN on silicon (111) using multi-buffer structure

*Kyu-Il Jang, Chul-Ho Won, Dong-Seok Kim, Sang-Min Jeon, Mi-Kyung Kwon, Ki-Won Kim, Ki-Sik Im, YoungWoo Jo, Mallem sivapratap Reddy, Ryun-Hwi Kim, Vodapally Sindhuri, and Jung-Hee Lee Kyungpook National University, Republic of Korea

TuP-GR-23 Pulsed MOVPE of AlInGaN for Integration as Barrier Layers in Blue InGaN LEDs
*Jan-Philipp Ahl(*1,*3), Joachim Hertkorn(*1), Alvaro Gomez-Iglesias(*1), J rgen Bl sing(*2), Alois Krost(*2), u a Frank Bertram(*2), J rgen Christen(*2), Karl Engl(*1), u Berthold Hahn(*1), and Ferdinand Scholz(*3) (*1)OSRAM Opto Semiconductors GmbH, Germany, (*2)Institute of Experimental Physics, Otto-von-GuerickeUniversity Magdeburg, Germany, and (*3)Institute of Optoelectronics, University of Ulm, Germany

TuP-GR-24 Thick InGaN growth by MOVPE with sputtered InGaN buffer layer
*Toshiya Ohata, Yoshio Honda, Masahito Yamaguchi, and Hiroshi Amano Nagoya University, Japan

TuP-GR-31 Fabrication and characterization of AlGaInN quantum wells

*Tomoyuki Suzuki(*1), Mitsuru Kaga(*1), Koichi Naniwae(*2), Tsukasa Kitano(*2), Kesuke Hirano(*1), Tetsuya Takeuchi(*1), Satoshi Kamiyama(*1,*2), Motoaki Iwaya(*1), and Isamu Akasaki(*1,*3) (*1)Faculty of Science and Technology, Meijo University, Japan, (*2)EL-SEED Corporation, Japan, and (*3)Akasaki Research Center, Nagoya University, Japan

TuP-GR-25 Correlation between surface reconstruction and morphology of InGaN and AlN (0001) in metalorganic vapour phase epitaxy
*Markus Pristovsek(*1), Abdul Kadir(*1), Konrad Bellman(*1), Frank Mehnke(*1), Joachim Stellmach(*1), Tim Wernicke(*1), Martin Leyer(*1), Tino Simoneit(*1), Michael Kneissl(*1,*2), Viola Kueller(*2), and Markus Weyers(*2) (*1)Institut of Solid State Physics, Technical University Berlin, Germany and (*2)Ferdinand-Braun-Institute, Leibnitz Insititute, Germany

TuP-GR-32 Real-time X-ray reectivity investigation InxGa1-xN epilayer growth by MOVPE

on

*Guangxu Ju(*1), Kota Yasunishi(*1), Shingo Fuchi(*1), Masao Tabuchi(*2), and Yoshikazu Takeda(*1,*2) (*1)Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Japan and (*2)Synchrotron Radiation Research Center, Nagoya University, Japan

TuP-GR-26 Strain relaxation mechanism in GaInN/GaN heterostructure characterized by in situ XRD monitoring during growth and ex situ measurements
*Hiroyuki Matsubara(*1), Daisuke Iida(*1), Toru Sugiyama(*1), Yasunari Kondo(*1), Mihoko Sowa(*1), Shinya Umeda(*1), Motoaki Iwaya(*1), Tetsuya Takeuchi(*1), Satoshi Kamiyama(*1), and Isamu Akasaki(*1,*2) (*1)Faculty of Science and Technology, Meijo University, Japan and (*2)Akasaki Research Center, Nagoya University, Japan

TuP-GR-33 Optical Quality Optimization of InGaN/GaN Multiple Quantum Well Layers Grown at High Pressure Condition
*Soo Min Lee, Erkan Acar Berkman, Dan Byrnes, Eric Armour, Dong S. Lee, George D. Papasouliotis, and Ajit Paranjpe Veeco Instruments Inc., MOCVD operations, United States of America

TuP-GR-27 Correlation of PL wavelength with in-situ measured wafer temperature and pocket temperature during MOCVD growth of InGaN MQWs on sapphire
*Kolja Haberland(*1), Frank Brunner(*2), Bernd Henninger(*1), R gis Sarcia(*1), and Markus Weyers(*2) e (*1)LayTec AG, Germany and (*2)Ferdinand-BraunInstitute, Germany

TuP-GR-34 Underlayer dependence of luminescence property for InGaN grown by MOVPE

*Hongbo Wang(*1), Hassanet Sodabanlu(*1), Yoshiaki Daigo(*2), Takashi Nakagawa(*2), and Masakazu Sugiyama(*1) (*1)The University of Tokyo, Japan and (*2)Canon ANELVA Corporation, Japan

TuP-GR-29 Comparison of crystalline quality in InGaN grown on (0001 ) and (0001) GaN/Sapphire by metalorganic vapor phase epitaxy
*Tomoyuki Tanikawa(*1), Ryuji Katayama(*1,*2), and Takashi Matsuoka(*1,*2) (*1)Institute for Materials Research, Tohoku University, Japan and (*2)CREST, Japan Science and Technology Agency, Japan

TuP-GR-35 Effect of Growth Temperature on the performance of InAlN/GaN Heterostructures Grown by Pulsed Metal Organic Chemical Vapor Deposition
*Junshuai Xue, Jincheng Zhang, and Yue Hao Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, China

TuP-GR-36 Investigation of growth mechanism for InGaN by MOVPE using computational reactor simulation
*Momoko Deura, Akira Hirako, Fumitaka Ichinohe, Yu Arai, Kenichi Shiohama, and Kazuhiro Ohkawa Tokyo University of Science, Japan

TuP-GR-30 Impact of accumulated stress on the quality of InGaN/AlN MQWs on GaN grown by MOVPE
*Kazehiko Anazawa(*1), Sodabanlu Hassanet(*2), Katsushi Fujii(*2), Yoshiaki Nakano(*1,*2), and Masakazu Sugiyama(*1) (*1)School of Engineering, The University of Tokyo, Japan and (*2)Research Center for Advance Science and Technology, The University of Tokyo, Japan

TuP-GR-37 Effect of strain-compensation of InGaN/AlGaN MQW grown by MOVPE

*Tomohiro Doi, Yoshio Honda, Masahito Yamaguchi, and Hiroshi Amano Department of Electrical Engineering and Computer Science, Nagoya University, Japan

TuP-GR-38 A pitfall in the MOVPE growth of InAlN: Unintentional Ga Incorporation

*Masanobu Hiroki(*1,*2), Yasuhiro Oda(*1), Noriyuki Watanabe(*1), Narihiko Maeda(*1), Huruki Yokoyama(*1), Kazuhide Kumakura(*2), and Hideki Yamamoto(*2) (*1)Photonics Labs., NTT Corporation, Japan and (*2)Basic Research Labs., NTT Corporation, Japan

TuP-GR-43 Growth of thick GaN layer grown by the use of Ga2O as Ga source
*Tomoaki Sumi(*1), Junichi Takino(*1), Yuan Bu(*1), Akira Kitamoto(*1), Mamoru Imade(*1), Masashi Yoshimura(*1), Masashi Isemura(*2), and Yusuke Mori(*1) (*1)Osaka University, Japan and (*2)Itochu Plastics Inc., Japan

TuP-GR-39 Correlations between MOVPE process recipes, material properties, and performances of blue and green LED structures
Eugene V Yakovlev, Kirill A Bulashevich, Sergey Yu Karpov, and *Roman A Talalaev STR Group, Russia

TuP-GR-44 Growth of a low dislocation GaN layer on a Na-uxGaN substrate using Ga2O as a Ga sourse
*Junichi Takino(*1), Tomoaki Sumi(*1), Yuan Bu(*1), Akira Kitamoto(*1), Mamoru Imade(*1), Masashi Yoshimura(*1), Masashi Isemura(*2), and Yusuke Mori(*1) (*1)Osaka university, Japan and (*2)Itochu Plastics Inc., Japan

TuP-GR-40 Inuence of nano-patterned sapphire substratesinduced strain in quantum-conned-stark effect of InGaN-based light-emitting diodes
Yi-Ji Chen(*1), *Vin-Cent Su(*1), Yao-Hong You(*1), Ming-Lun Lee(*1), Chieh-Hsiung Kuan(*1), Po-Hsun Chen(*1), Cheng-Ju Hsieh(*1), Ray-Ming Lin(*2), and Sheng-Fu Yu(*2) (*1)Department of Electrical Engineering, National Taiwan University, Taiwan and (*2)Department of Electronic Engineering, Chang Gung University, Taiwan

TuP-GR-45 4-inch Diameter Free-Standing GaN Wafer by HVPE with a Pit-Induced Buffer Layer
*Tadashige Sato(*1), Shinya Okano(*1), Takenari Goto(*1), Takafumi Yao(*1), Ritsu Seto(*2), Akira Sato(*2), and Hideki Gotoh(*2) (*1)Center for Interdisciplinary Research, Tohoku University, Japan and (*2)Tsukuba R&D Center, AETech Corporation, Japan

TuP-GR-41 Effects of Crystallography-etched Facets on Patterned Sapphire Substrates for GaN-based LEDs
*Ray-Hua Horng(*1), Kun-Ching Shen(*1,*2), and DongSing Wuu(*2,*3) (*1)Graduate Institute of Precision Engineering, National Chung Hsing University, Taiwan, (*2)Department of Materials Science and Engineering, National Chung Hsing University, Taiwan, and (*3)Department of Electrical Engineering, Da-Yeh University, Taiwan

TuP-GR-46 Analysis of self-lift-off technique during HVPE growth of GaN on MOCVD-GaN/sapphire substrates with photolitographically patterned Ti masks
*Mikolaj Amilusik TopGaN Ltd, Poland

TuP-GR-47 Study on In-situ Separation of GaN by using Thermal Decomposition Properties

*Si-Nae Kim(*1,*2), Hyun-Jae Lee(*1), Si-Young Kim(*1), Sung-Kook Choi(*2), Woong Lee(*3), Takashi Sekiguchi(*3), and Jiho Chang(*2) (*1)PAN-crystal, Republic of Korea, (*2)Department of Nano-Semiconductor Engineering, National Korea Maritime University, Republic of Korea, and (*3)National Institute for Materials Science, Japan

TuP-GR-42 InGaN-based Light-Emitting Diode Regrown on a GaN Template with a Hexagonal Inverted Pyramid Structure
*Chia-Feng Lin(*1), Sih-Han Chen(*2), Tsung-Han Hsieh(*3), Wan-Chun Huang(*4), and Kaun-Chun Wu(*5) (*1)Department of Materials Science and Engineering, National Chung Hsing University, Taiwan, (*2)Department of Materials Science and Engineering, National Chung Hsing University, Taiwan, (*3)Department of Materials Science and Engineering, National Chung Hsing University, Taiwan, (*4)Department of Materials Science and Engineering, National Chung Hsing University, Taiwan, and (*5)Department of Materials Science and Engineering, National Chung Hsing University, Taiwan

TuP-GR-48 Si-doping of GaN in HVPE

*Eberhard Richter(*1), Toma Stoica(*2), Ute Zeimer(*1), Carsten Netzel(*1), Markus Weyers(*1), and Guenther Traenkle(*1) (*1)Ferdinand-Braun-Institut im Forschungsverbund Berlin e.V., Germany and (*2)Peter Gruenberg Institut, Juelich Aachen Research Alliance, FZ Juelich, Germany

TuP-GR-49 2-inch AlN wafer for III-group nitride devices

*Yuri Makarov(*1,*2), Oleg V. Avdeev(*2), Sergei S. Nagalyuk(*2), Evgenii N. Mokhov(*2), Mark G. Ramm(*3), and Heikki Helava(*3) (*1)Nitride Crystals, Inc., United States of America, (*2)Nitride Crystals Ltd., Russia, and (*3)Helava Systems Inc., United States of America

TuP-GR-55 Effect of high NH3 input partial pressure on hydride vapor phase epitaxy of InN using nitrided (0001) sapphire substrates
*Rie Togashi(*1), Sho Yamamoto(*1), Fredrik Karlsson(*2), Hisashi Murakami(*1), Yoshinao Kumagai(*1), Per-Olof Holtz(*2), and Akinori Koukitu(*1) (*1)Department of Applied Chemistry, Tokyo University of Agriculture and Technology, Japan and (*2)Department of Physics (IFM), Link ping University, Sweden o

TuP-GR-50 AlN Single Crystal Growth by an Open-system Sublimation Method

*Hiroyuki Kamata(*1), Kunihiro Naoe(*1), Tomonori Miura(*2), and Tomohisa Kato(*2) (*1)Fujikura Ltd., Japan and (*2)National Institute of Advanced Industrial Science and Technology (AIST), Advanced Power Electronics Research Laboratory (ADPERC), Japan

TuP-GR-56 Selective growth of N-polar InN on an in situ AlN mask on sapphire substrate
*Ke Wang(*1), Tsutomu Araki(*1), Misaichi Takeuchi(*1), and Yasushi Nanishi(*1,*2) (*1)Ritsumeikan University, Japan and (*2)Seoul National University, Republic of Korea

TuP-GR-51 Characterization of free-standing HVPE-GaN grown by Carrier Gas Switch (CGS) method
*Tomasz Sochacki Institute of High Pressure Physics PAS, Poland

TuP-GR-57 Growth of High Quality Thin InN Layers by RFMBE

*Tsutomu Araki(*1), Nao Uematsu(*1), Masatsugu Yutani(*1), Junichi Sakaguchi(*1), Ke Wang(*1), Akira Uedono(*2), Tatsuya Fujishima(*3), Elison Matioli(*3), Tomas Palacios(*3), and Yasushi Nanishi(*1,*4) (*1)Ritsumeikan University, Japan, (*2)Tsukuba University, Japan, (*3)Massachusetts Institute of Technology, United States of America, and (*4)Seoul National University, Republic of Korea

TuP-GR-52 Fabrication of large freestanding semipolar {1122} GaN lms using r-plane patterned sapphire substrates
*Hiroshi Furuya, Keisuke Yamane, Narihito Okada, and Kazuyuki Tadatomo Graduate School of Science & Engineering, Yamaguchi University, Japan

TuP-GR-53 The manufacture of free-standing (FS) GaN substrates by new self-separation methods
*Jiejun Wu, Tong Han, Xiangshun Liu, Xiangning Kang, Zhijian Yang, Tongjun Yu, and Guoyi Zhang School of Physics, Peking University, China

TuP-GR-58 Polarity controlling growth of InN by electric eld enhanced metal organic chemical vapor deposition on AlN buffer layer
*Yuichi Ota and Takashi Inushima Department of electronics, Tokai University, Japan

TuP-GR-54 Surface and Bulk Electronic Structure of Mgdoped InN Analyzed by Hard X-ray Photoelectron Spectroscopy
*Masataka Imura(*1), Shunsuke Tsuda(*1), Takahiro Nagata(*1), Yasuo Koide(*1), Anli Yang(*1), Yoshiyuki Yamashita(*1), Hideki Yoshikawa(*1), Keisuke Kobayashi(*1), Masamitsu Kaneko(*2), Tomohiro Yamaguchi(*2,*3), Nao Uematsu(*2), Tsutomu Araki(*2), and Yasushi Nanishi(*2,*4) (*1)NIMS, Japan, (*2)Ritsumeikan University, Japan, (*3)Kogakuin University, Japan, and (*4)Seoul National University, Republic of Korea

TuP-GR-59 Growth and characterizations of nonpolar InN epitaxial lm on LiAlO2 substrate by halide vapor phase epitaxy
*Chu-An Li, Chenlong Chen, Chun-Yu Lee, Da-Ren Hang, and Mitch M.C. Chou Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Taiwan

TuP-GR-60 HVPE growth of InN on InN/sapphire (0001) templates prepared by MBE

*Ryota Imai(*1), Sho Yamamoto(*1), Rie Togashi(*1), Hisashi Murakami(*1), Yoshinao Kumagai(*1), Tomohiro Yamaguchi(*2,*3), Tsutomu Araki(*2), Yasushi Nanishi(*2,*4), and Akinori Koukitu(*1) (*1)Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, Japan, (*2)Department of Photonics, Ritsumeikan University, Japan, (*3)Department of Information and Communications Engineering, Kogakuin University, Japan, and (*4)Department of Materials Science and Engineering, Seoul National University, Republic of Korea

TuP-GR-61 Growth and characterizations of non-polar a-plane InN epitaxial lm on (010) LiGaO2substrate by halide vapor phase epitaxy
*Chu-An Li, Chenlong Chen, Da-Ren Hang, Chun-Yu Lee, and Mitch M.C. Chou Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Taiwan

TuP-GR-67 Comprehensive study on the structural, optical and electrical properties of MOCVD-grown highquality InN and the inuence of the V/III ratio
*Oecal Tuna(*1,*2), Ronny Kirste(*3), Stefan Mohn(*3), Max Buegler(*3), Ebru Bakir kandemir(*1,*2), Christoph Giesen(*1), Holger Kalisch(*2), Andrei Vescan(*2), Axel Hoffmann(*3), and Michael Heuken(*1,*2) (*1)AIXTRON SE, Germany, (*2)GaN Device Technology, RWTH Aachen University, Germany, and (*3)TU Berlin, Institute of Solid State Physics, Germany

TuP-GR-62 Thickness Dependence of Structural and Electrical Properties of Thin InN Grown by RF-MBE
*Junichi Sakaguchi(*1), Tsutomu Araki(*1), Tatsuya Fujishima(*2), Elison Matioli(*2), Tomas Palacios(*2), and Yasushi Nanishi(*1,*3) (*1)Ritsumeikan University, Japan, (*2)Massachusetts Institute of Technology, United States of America, and (*3)Seoul National University, Republic of Korea

TuP-GR-68 Optimization of a-plane InN lms by MOCVD on r-plane sapphire

*Ebru Bakir kandemir(*1), Ocal Tuna(*1,*2), Christoph Giesen(*1), Holger Kalisch(*2), Andrei Vescan(*2), and Michael Heuken(*1,*2) (*1)AIXTRON SE, Germany and (*2)GaN Device Technology, RWTH Aachen University, Germany

TuP-GR-63 Growth of donut type Indium nitride structure on stepped Si (553) surface
Amit Kumar Singh Chauhan(*1), Mukesh Kumar(*2), and *Govind .(*1) (*1)National Physical Laboratory (CSIR), New Delhi, India and (*2)Indian institute of Technology, Delhi, India

TuP-GR-69 Comparative studies of Raman Spectra from InGaN grown by MBE and by MOVPE
*Daizo Hironaga(*1), Kenji Kodama(*1), Kensuke Kasagi(*1), Akihiro Hashimoto(*1), and Hiroshi Harima(*2) (*1)University of Fukui, Japan and (*2)Kyoto Institute of Technology, Japan

TuP-GR-64 Electrical properties and growth mechanism of high indium content InGaN (33-62%) deposited by pulse laser deposition
*Tzu-Yu Wang(*1), Kun-Ching Shen(*1), Ray-Hua Horng(*2), and Dong-Sing Wuu(*1,*3) (*1)Department of Materials Science and Engineering, National Chung Hsing University, Taiwan, (*2)Graduate Institutes of Precision Engineering, National Chung Hsing University, Taiwan, and (*3)Departments of Materials Science and Engineering, Da-Yeh University, Taiwan

TuP-GR-70 A study of strain compensated In rich InGaN for increasing the critical thickness
*Young Ho Song(*1), Seung Hwan Kim(*1,*2), Hyung-Jo Park(*1), and Seong-Ran Jeon(*1) (*1)Korea Photonics Technology Institute, Republic of Korea and (*2)School of Semiconductor & Chemical Engineering and Semiconductor Physics Research Center,Chonbuk National University, Republic of Korea

TuP-GR-65 InN lms growth by PEMOCVD with nitrogen activation in the ECR discharge sustained by 24 GHz gyrotron radiation
*Alexander Vodopyanov(*1), Yurii Buzynin(*2), Mikhail Viktorov(*1), Sergey Golubev(*1), Mikhail Drozdov(*2), Yurii Drozdov(*2), Oleg Khrykin(*2), Andrei Lukyanov(*2), Dmitry Mansfeld(*1), and Vladimir Shashkin(*2) (*1)Institute of Applied Physics RAS, Russia and (*2)Institute for Physics of Microstructures RAS, Russia

TuP-GR-71 Growth of InN and In rich InGaN thin lms by pulsed MOCVD
*Tadas Malinauskas, Arunas Kadys, Tomas Grinys, Mantas Dmukauskas, Juras Mickevicius, Justinas Aleknavicius, and Roland Tomasiunas Institute of Applied Research, Vilnius University, Lithuania

TuP-GR-72 Deposition of InGaN using Migration Enhanced Afterglow

*K. Scott A. Butcher(*1,*2), Dimiter Alexandrov(*1,*2), Penka Terziyska(*1), Rositsa Gergova(*1), Vasil Georgiev(*1,*2), Dimka Georgieva(*1), and Peter W. Binsted(*1) (*1)Lakehead University, Canada and (*2)Meaglow Ltd, Canada

TuP-GR-66 MOVPE growth of semi-polar InN layers on GaAs(311)A and (311)B substrates
*Hisashi Murakami(*1), Tetsuro Hotta(*1), Mayu Suematsu(*1), Tadashi Ohachi(*2), Yoshinao Kumagai(*1), and Akinori Koukitu(*1) (*1)Department of Appl. Chem., Tokyo Univ. of Agri. & Tech., Japan and (*2)Interface Reaction Epitaxy Lab., Doshisha Univ., Japan

TuP-GR-73 The Inuence of Growth Condition to In-Induced and Strain-Induced InN Nanorods by MetalOrganic Molecular Beam Epitaxy
*Woei-Tyng Lin(*1), Fang-I Lai(*1), and Shou-Yi Kuo(*2) (*1)Department of Photonics Engineering, Yuan-Ze University, Taiwan and (*2)Department of Electronic Engineering, Chang Gung University, Taiwan

TuP-OD-6 Ag/Zn/Ag ohmic reector for high-power GaNbased vertical LEDs

*Woong-Sun Yum(*1), Joon-Woo Jeon(*2), Jun-Suk Sung(*1), and Tae-Yeon Seong(*2) (*1)Department of Nanophotonics, Korea University, Republic of Korea and (*2)Department of Materials Science and Engineering, Korea University, Republic of Korea

TuP-OD-1 Fabrication of C-doped p-AlGaInN LED by the insertion of Al4C3

*Dohyung Kim(*1), Heesub Lee(*2), Kazuya Yamazumi(*1), Yoshiki Naoi(*1), and Shiro Sakai(*1) (*1)Tokushima University, Japan and (*2)Seoul Optodevice, Republic of Korea

TuP-OD-7 Enhanced optical power of InGaN-GaN lightemitting diode by AlGaN interlayer and electron blocking layer
*Sang-Jun Lee, Chu-Young Cho, Sang-Hyun Hong, Kwang jae Lee, and Seong-Ju Park School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Republic of Korea

TuP-OD-2 AlGaN/InGaN/GaN LED with Patterned Contact: Analysis of Efciency Improvement

Akihiro Konishi(*1), Julia Kholopova(*2), *Ryosuke Yamase(*1), Evgeny Polushkin(*2), Anatoly Kovalchuk(*2), Valery Zemlyakov(*3), Sergei Shapoval(*2), and Irina Khmyrova(*1) (*1)University of Aizu, Japan, (*2)IMT RAS, Russia, and (*3)R&D Corporation Istok, Russia

TuP-OD-8 GaN based lateral pn-junctions

*Ronny Kirste(*1), Thomas Kure(*2), Andy Xie(*3), Zachary Bryan(*1), Marc Hoffmann(*1), Ramon Collazo(*1), Gordon Callsen(*2), Markus R Wagner(*2), Axel Hoffmann(*2), and Zlatko Sitar(*1) (*1)NCSU, Department of Materials Science and Engineering, United States of America, (*2)TU Berlin, Institut f r u Festk rperphysik, Germany, and (*3)HexaTech, Inc., United o States of America

TuP-OD-3 Internal quantum efciency of InGaN blue lightemitting diodes on silicon substrates determined from rate equation analyses
*S. H. Lee(*1), G. H. Ryu(*1), H. J. Kim(*1), H. Y. Ryu(*1), K. S. Jeon(*2), E. Lee(*2), J. H. Sung(*2), M. W. Lee(*2), M. G. Kang(*2), Y. H. Choi(*2), and J. S. Lee(*2) (*1)Inha University, Republic of Korea and (*2)LG Electronics Advanced Research Institute, Republic of Korea

TuP-OD-9 Improved Thermal Stability of Ag Ohmic Reector for GaN-Based Light-Emitting Diodes Using a Zn Capping Layer
*Jae-Seong Park Department of Materials Science and Engineering, Korea University, Republic of Korea

TuP-OD-4 Spatial distribution of currents and local temperatures in the active region of AlGaInN LED chips of the vertical and ip-chip design
*Alexey S. Pavlyuchenko(*1,*2), Lev K. Markov(*1), Irina P. Smirnova(*1), and Mikhail V. Kukushkin(*3) (*1)Ioffe Physico-Technical Institute, Russia, (*2)EpiCenter JSC, Russia, and (*3)Innovation Firm TETIS JSC, Russia

TuP-OD-10 Reduction of graphene damages during the fabrication of InGaN/GaN light emitting diodes with graphene electrodes
*Kisu Joo(*1), Sahng-Kyoon Jerng(*2), Yong seung Kim(*2), Bumho Kim(*3), Seunghyun Moon(*1), YoonKyu Song(*1), Gun-Do Lee(*3), Seung Hyun Chun(*2), and Euijoon Yoon(*1,*3,*4) (*1)1Department of Nano Science and Technology, Graduate School of Convergence Science and, Republic of Korea, (*2)2Department of Physics & Graphene Research Institute, Sejong University, Seoul 143-747, Korea, Republic of Korea, (*3)3Hybrid Materials Program (WCU), Department of Materials Science and Engineering,, Republic of Korea, and (*4)4Energy Semiconductor Research Center, Advanced Institutes of Convergence Technology, Seoul National University, Suwon 443-270, Korea, Republic of Korea

TuP-OD-5 Electrical and Optical Properties of a Large Area Blue Light Emitting Diode
*Wei Wang(*1,*2,*3), Yong Cai(*1), Wei Huang(*4), Hai Ou Li(*4), and Bao Shun Zhang(*1) (*1)Suzhou Institute of Nano-tech and Nano-bionics, CAS, China, (*2)Institute of Semiconductors, CAS, China, (*3)Graduate University of the Chinese Academy of Sciences, China, and (*4)WuXi Jingkai Technology Co., Ltd, China

TuP-OD-11 InGaN/GaN light emitting diode structure on 200 mm diameter (111)-oriented Si substrate
S. B. Dolmanan(*1), S. Todd(*2), Joyce P. Y. Tan(*1), Vivian Lin(*1), N. Yokovlev(*1), R. S. Kajen(*1), S. L. Teo(*1), L. K. Bera(*1), W. Z. Wang(*2), M. Krishna Kumar(*1), G. Q. Lo(*2), and *Sudhiranjan Tripathy(*1) (*1)Institute of Materials Research and Engineering, A*STAR, Singapore and (*2)Institute of Microelectronics, A*STAR, Singapore

TuP-OD-17 Electroluminescence analysis and simulation of the effects of injection and temperature on carrier distribution in InGaN-based LEDs with color-coded quantum wells
Matteo Meneghini(*1), Simone Vaccari(*1), *Nicola Trivellin(*1), Dandan Zhu(*2), Colin J Humphreys(*2), Marco Calciati(*3), Michele Goano(*3), Giovanni Ghione(*3), Enrico Bellotti(*4), Gaudenzio Meneghesso(*1), and Enrico Zanoni(*1) (*1)University of Padova, Italy, (*2)University of Cambridge, United Kingdom, (*3)Politecnico di Torino, Italy, and (*4)Boston University, United States of America

TuP-OD-12 Enhancement of Light Output Power in GaN-based Vertical Light-Emitting Diodes with Various Current Blocking Methods
Tak Jeong(*1), *Hyeuk Seo(*1), Ki Chang Jung(*1), Jong Hyeob Baek(*1), and Joon Seop Kwak(*2) (*1)LED device team, Korea Photonics Technology Institute, Republic of Korea and (*2)Department of Printed Electronics Engineering (WCU),Sunchon National University, Republic of Korea

TuP-OD-18 Regularly patterned nanorod light-emitting diode array with polar and non-polar InGaN/GaN quantum wells
*Che-Hao Liao, Wen-Ming Chang, Yu-Feng Yao, Shao-Ying Ting, Horng-Shyang Chen, Chih-Yen Chen, Hao-Tsung Chen, Chia-Ying Su, Yean-Woei Kiang, and C. C. Yang Institute of Photonics and Optoelectronics, National Taiwan University, Taiwan

TuP-OD-13 Improvement of light output power of light emitting diodes with various polygon shapes
*Seung Bae Yang(*1,*2), Yong-Jin Kang(*1,*3), Min-Ki Kwon(*3), Jong Hyeob Baek(*1), June-Key Lee(*2), and JaYeon Kim(*1) (*1)Korea Photonics Technology Institute, Republic of Korea, (*2)Chonnam National University, Republic of Korea, and (*3)Chosun University, Republic of Korea

TuP-OD-19 Surface grating light-emitting diode of enhanced light extraction

*Horng-Shyang Chen, Chih-Chun Lin, Po-Han Chang, Chieh Hsieh, Che-Hao Liao, Chih-Yen Chen, Yean-Woei Kiang, and C. C. Yang Institute of Photonics and Optoelectronics, National Taiwan University, Taiwan

TuP-OD-14 InGaN/GaN structures and devices grown on freestanding GaN substrates with variable vicinal angles
*Marcin Sarzynski(*1,*2), Grzegorz Staszczak(*1), Jakub Goss(*1), Michal Bockowski(*1,*2), Jerzy Plesiewicz(*2), and Tadek Suski(*1,*2) (*1)Institute of High Pressure Physics PAS, Poland and (*2)TopGaN Ltd., Poland

TuP-OD-20 Double embedded photonic crystals for extraction of guided light in light-emitting diodes
*Jason Jewell(*1), Dobri Simeonov(*1), Shih-Chieh Huang(*1,*2), Yan-Ling Hu(*1), Shuji Nakamura(*1), James Speck(*1), and Claude Weisbuch(*1,*3) (*1)Department of Materials, University of California, United States of America, (*2)R&D Department of LED Unit, Walsin Lihwa Corporation, Taiwan, and (*3)Laboratoire de Physique de la Mati` re Condens e, CNRS, Ecole e e Polytechnique, France

TuP-OD-15 Comparison of output power of InGaN-based LED grown on Al2O3 and Si (111) substrate with Codoped ZnO lm
*Yen-Hsiang Fang(*1), Rong Xuan(*1,*2), Chih-Hao Hsu(*1), and Jung-Chun-Andrew Huang(*3) (*1)Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Taiwan, (*2)Department of Electrophysic, National Chiao Tung University, Taiwan, and (*3)Department of Physics, National Cheng Kung University, Taiwan

TuP-OD-21 Near-Ultraviolet GaN-based light-emitting-diode prepared on GaN nano-rod arrays

*Yu-An Chen and Cheng huang Kuo Institute of Lighting and Energy Photonics, National Chiao Tung University, Taiwan

TuP-OD-16 Cubic GaInN/GaN multi-quantum well lightemitting diodes on V-grooved (001) Si

*Christoph J.M. Stark(*1), Theeradetch Detchprohm(*1), S. C. Lee(*2), S. R. J. Brueck(*2), and Christian Wetzel(*1) (*1)Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, United States of America and (*2)Center for High Technology Materials, University of New Mexico, United States of America

TuP-OD-22 Green and Red Light-Emitting Diodes based on multilayer InGaN/GaN Quantum Dots using Growth Interruption Method
*Wenbin Lv, Lai Wang, Jiaxing Wang, Zhibiao Hao, and Yi Luo Department of Electronic Engineering, Tsinghua University, China

TuP-OD-23 Lasing Characteristics of GaN zoid/Cylindrical Nanorod Structure

Trape-

*Kuok-Pan Sou(*1), Shih-Pang Chang(*1), Yu-Cheng Hsu(*2), Min-Hsiung Shih(*1,*3), Hao-Chung Kuo(*1), Ken-Yuh Hsu(*1), and Chun-Yen Chang(*2) (*1)Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Taiwan, (*2)Department of Electronic Engineering, National Chiao Tung University, Taiwan, and (*3)Research Center for Applied Sciences, Academia Sinica, Taiwan

TuP-OD-28 Enhancement of Light Extraction Efciency in GaN-Based Blue Light-Emitting Diodes by Doping TiO2 Nano-Particle in Encapsulation Silicone
*Pin-Chan Wang(*1), Yan-Kuin Su(*1), and Chun-Liang Lin(*2) (*1)Institute of Microelectronics, Department of Electrical Engineering and Advanced Optoelectronic Technology Center , National Cheng Kung University, Taiwan and (*2)Department of Electro-Optical Engineering, Kun-Shan University, Taiwan

TuP-OD-24 Utilization of highly wavelength tunable micropyramids as LED emitters

*Clemens W chter(*1), Martin Thunert(*2), Sebastian Meta zner(*2), Michael Jetter(*1), Frank Bertram(*2), J rgen u Christen(*2), and Peter Michler(*1) (*1)Institut f r Halbleiteroptik und Funktionelle Grenu z chen, University of Stuttgart, Germany and (*2)Instia tut f r Experimentelle Physik, Otto-von-Guericke University, u Germany

TuP-OD-30 Effect of the alignment of ZnO nanorod arrays on light extraction enhancement of GaN-based lightemitting diodes
*Pan-Joo Choi(*1), Yong-Jin Kang(*1,*2), Yoo-Min Choi(*1,*2), Hojoon Bea(*1,*2), Ja-Yeon Kim(*2), Jong hyeob Baek(*2), and Min-Ki Kwon(*1) (*1)Chosun University, Republic of Korea and (*2)Korea Photonics Technology Institute, Republic of Korea

TuP-OD-25 Localized surface plasmons enhanced nearultraviolet emission from InGaN-GaN lightemitting diodes using silver nanoparticles
*Sang-Hyun Hong(*1), Chu-Young Cho(*1), Sang-Jun Lee(*1), Sang-Youp Yim(*2), and Seong-Ju Park(*1) (*1)School of Material Science and Engineering, Gwangju Institute of Science and Technology, Republic of Korea and (*2)Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, Republic of Korea

TuP-OD-31 Nano-ridges InN gate structures in InGaN/ GaN device for sensing varying molar concentration of Chloride Ions
*C.B. Soh(*1), Ian P. Y. Seetoh(*2), X. L. Teo(*1), Rayson J. N. Tan(*1), and S. J. Chua(*1,*2) (*1)Institute of Materials Research and Engineering, Singapore and (*2)Singapore-MIT Alliance, National University of Singapore, Singapore

TuP-OD-26 Improved optical and structural properties of InGaN/GaN multiple quantum wells structure grown on nano-porous GaN template
*Kwang Jae Lee(*1), Sang-Jun Lee(*1), Sang-Hyun Hong(*1), Jae-Joon Kim(*2), Sang-Jo Kim(*2), Kyungwook Hwang(*3), Sung-Tae Kim(*3), and Seong-Ju Park(*1,*2) (*1)School of Material Science and Engineering, Gwangju Institute of Science and Technology, Republic of Korea, (*2)Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Republic of Korea, and (*3)Samsung ELECTRONICS Co. Ltd., Republic of Korea

TuP-OD-32 Using the systematic design of one-dimensional sub-wavelength photonic crystals to obtain high light extraction efciency of InGaN-based lightemitting diodes
Yao-Hong You(*1), *Vin-Cent Su(*1), Yi-Ji Chen(*1), Ming-Lun Lee(*1), Chieh-Hsiung Kuan(*1), Po-Hsun Chen(*1), Cheng-Ju Hsieh(*1), Ray-Ming Lin(*2), and Sheng-Fu Yu(*2) (*1)Department of Electrical Engineering, National Taiwan University, Taiwan and (*2)Department of Electronic Engineering, Chang Gung University, Taiwan

TuP-OD-27 Enhancing Light Emission of Nanostructured Vertical Light-Emitting Diodes by Minimizing Total Internal Reection
*Byeong-Uk Ye(*1), Buem Joon Kim(*2), Yang Hee Song(*2), Jun Ho Son(*2), Hak Ki Yu(*2), Jong-Lam Lee(*2), and Jeong Min Baik(*1) (*1)Ulsan National Institute of Science and Technology (UNIST), Republic of Korea and (*2)Pohang University of Science and Technology (POSTECH), Republic of Korea

TuP-OD-33 A systematic study of Cl/Ar ICP plasma etching to create high-aspect-ratio GaN nanorods and nanoholes
*Emmanuel Damien Le boulbar(*1), Duncan W.E. Allsopp(*1), Jacques Perriere(*2), and Philip A. Shields(*1) (*1)Department of Electronic and Electrical Engineering, University of Bath, United Kingdom and (*2)INSP, UMR 7588 CNRS-Universit Paris 6, France e

TuP-OD-34 Fabrication of AlGaN two-dimensional photonic crystal nanocavities by selective thermal decomposition of GaN
*Munetaka Arita(*1), Satoshi Kako(*2), Satoshi Iwamoto(*1,*2), and Yasuhiko Arakawa(*1,*2) (*1)Institute for Nano Quantum Information Electronics, University of Tokyo, Japan and (*2)Institute of Industrial Science, University of Tokyo, Japan

TuP-PR-3 Enhanced carrier connement in InGaN quantum dots

*Stephan Figge(*1), Timo Aschenbrenner(*1), Kathrin Morosov(*1), Elahe Zikizade(*1), Carsten Kruse(*1), Andreas Rosenauer(*1), Thorsten Mehrtens(*1), S Kremling(*1,*2), S H ing(*2), L Worschech(*2), A Forchel(*2), and Detlef o Hommel(*1) (*1)Institute of solid state Physics, Bremen University, Germany and (*2)University of W rzburg, Germany u

TuP-OD-35 High Quality Factor 2D GaN Photonic Crystals Cavity Membranes grown on Silicon
*Noelia Vico trivi o, Georg Rossbach, Ulagalandha Perun mal Dharanipathy, Jacques Levrat, Antonino Castiglia, JeanFrancois Carlin, Kirill a. Atlasov, Rapha l Butt , Romuald e e Houdr , and Nicolas Grandjean e Intitute of Condensed Matter Physics, Ecole Polytechnique F d rale de Lausanne (EPFL), Swiss e e

TuP-PR-4 InGaN/GaN Core-Shell Nanorod Plasmonic Laser

*Yu-Jung Lu(*1), Jisun Kim(*2), Hung-Ying Chen(*1), Chihhui Wu(*2), Nima Dabidian(*2), Charlotte E. Sanders(*2), Chun-Yuan Wang(*1), Ming-Yen Lu(*3), Wen-Hao Chang(*4), Lih-Juann Chen(*3), Gennady Shvets(*2), Chih-Kang Shih(*2), and Shangjr Gwo(*1) (*1)Department of Physics, National Tsing-Hua University, Taiwan, (*2)Department of Physics, The University of Texas at Austin, Austin, United States of America, (*3)Department of Materials Science and Engineering, National Tsing-Hua University, Taiwan, and (*4)Department of Electrophysics, National Chiao-Tung University, Taiwan

TuP-OD-36 Broad-band Green and Red Emission from InGaN Structures Grown on GaN Nano-Pyramid Arrays
*Young-Ho Ko(*1), Je-Hyung Kim(*1), Su-Hyun Gong(*1), Joosung Kim(*2), Taek Kim(*2), and Yong-Hoon Cho(*1) (*1)Department of Physics and Graduate School of Nanoscience & Technology (WCU), Korea Advanced Institute of Science and Technology (KAIST), Republic of Korea and (*2)Samsung Advanced Institute of Technology, Republic of Korea

TuP-PR-5 Role of the dielectric mismatch on the emission properties of GaN nanostructures
*Pierre Corfdir(*1) and Pierre Lefebvre(*2,*3) (*1)Cavendish Laboratory, University of Cambridge, United Kingdom, (*2)CNRS, Laboratoire Charles Coulomb, France, and (*3)Universit Montpellier 2, Laboratoire e Charles Coulomb, France

TuP-OD-37 Efciency improvement of GaN-based LED with selective area nanorod using Al2O3 Powder
*Seunghwan Kim(*1), Wooyoung Sun(*1), Youngho Song(*2), Hyungjo Park(*2), Seongran Jeon(*2), and Gyemo Yang(*1) (*1)Chonbuk National University, Republic of Korea and (*2)Korea Photonics Technology Institute, Republic of Korea

TuP-PR-6 Single InGaN/GaN Nanorod luninescence from wafer-scale nanorod LEDs

*Christopher C.S. Chan(*1), Benjamin P.L. Reid(*1), Mark J. Holmes(*1), Wei Jia(*1), Robert A. Taylor(*1), Yiding Zhuang(*2), Philip A. Shields(*2), and Duncan W.E. Allsopp(*2) (*1)University of Oxford, United Kingdom and (*2)University of Bath, United Kingdom

TuP-PR-1 Design and optical characterization of GaN/AlN quantum-dot waveguides for ultrafast optical switching at 1.55 m
*S. Valdueza-Felip(*1,*5), L. Monteagudo-Lerma(*1), F. B. Naranjo(*1), P. Corredera(*2), L. Rapenne(*3), E. Sarigiannidou(*3), G. Strasser(*4), E. Monroy(*5), and M. Gonzalez-Herraez(*1) (*1)Electronics Dept., University of Alcal , Spain, (*2)Ina stituto de Fisic Aplicada, CSIC, Spain, (*3)INP-Grenoble, Minatec, France, (*4)Zentrum fuer Mikro- und Nanostrukt., TU Vienna, Austria, and (*5)CEA - Grenoble, France

TuP-PR-7 Comparison of different III-nitride nanostructure dry etching approaches

*Anna Haab(*1,*2), Martin Mikulics(*1,*2), Andreas Winden(*1,*2), Toma Stoica(*1,*2), Eli Sutter(*3), Detlev Gr tzmacher(*1,*2), and Hilde Hardtdegen(*1,*2) u (*1)Peter Gruenberg Institut 9, Forschungszentrum Juelich, Germany, (*2)JARA Fundamentals of Future Information Technologies, Germany, and (*3)Center for Functional Nanomaterials, Brookhaven National Laboratory, United States of America

TuP-PR-2 Optical Properties of InGaN-Based 613nm Emission Nanocolumns

*Yusuke Igawa(*1,*2), Ramesh Vadivelu(*1,*2), and Katsumi Kishino(*1,*2) (*1)Faculty of Science and Technology, Sophia University, Japan and (*2)Sophia Nanotechnology Research Center, Japan

TuP-PR-8 Whispering gallery modes in self-assembled InGaN/GaN core-shell rods and nanorods grown by metal-organic vapor phase epitaxy
*Christian Tessarek(*1,*2), Martin Heilmann(*1), George Sarau(*1), and Silke Christiansen(*1,*3) (*1)Max Planck Institute for the Science of Light, Erlangen, Germany, (*2)Institute of Optics, Information and Photonics, University Erlangen-Nuremberg, Germany, and (*3)Institute of Photonic Technology, Jena, Germany

TuP-PR-14 High quality factor microdisks embedding nitride quantum dots

M. Mexis(*1,*2), S. Sergent(*3,*4), T. Guillet(*1,*2), C. Brimont(*1), *B. Gil(*1,*2), T. Bretagnon(*1,*2), F. Semond(*3), M. Leroux(*3), D. Neel(*5), S. David(*5), X. Checoury(*5), and P. Boucaud(*5) (*1)Universite Montpellier 2, Laboratoire Charles Coulomb UMR 5221, F-34095, Montpellier, France, France, (*2)CNRS, Laboratoire Charles Coulomb UMR 5221, F34095, Montpellier, France, (*3)CRHEA-CNRS, Valbonne 06560, France, (*4)Universite de Nice Sophia Antipolis, Parc Valrose, Nice 06102 Cedex 2, France, and (*5)IEF, CNRS - Univ. Paris Sud, Orsay, France

TuP-PR-9 Spectral and Emission Characteristics of GaN Nano-rods Containing a Single or Multiple InGaN Quantum Wells
*Yiding Zhuang(*1), Szymon Lis(*1), Jochen Bruckbauer(*2), Simon E.J. Okane(*1), Philip A. Shields(*1), Paul R. Edwards(*2), Robert W. Martin(*2), Jayanta Sarma(*1), and Duncan W.E. Allsopp(*1) (*1)Dept of Electronic and Electrical Engineering, University of Bath, United Kingdom and (*2)Dept. of Physics, SUPA, University of Strathclyde, United Kingdom

TuP-PR-15 Electrical characterization of single GaN/InGaN nanorods grown by selective-area molecular beam epitaxy
*Francesca Barbagini, Ana Bengoechea-Encabo, Steven Albert, Manuel Lopez-Ponce, Miguel angel Sanchez-Garca, and Enrique Calleja ISOM and Electrical Engineering Dept., Escu la T cnica e e Superior de Ingenieros de Telecomunicaciónes, Universidad Polit cnica de Madrid, Spain e

TuP-PR-10 Lasing action in photonic quasicrystal InGaN/GaN core-shell nanorod arrays

*Shih-Pang Chang(*1), Kuok-Pan Sou(*1), Chieh-Han Chen(*1), Yuh-Jen Cheng(*1,*2), Ji-Kai Huang(*3), ChungHsiang Lin(*3), Hao-Chung Kuo(*1), Chun-Yen Chang(*4), and Wen-Feng Hsieh(*1) (*1)Department of Photonics, National Chiao Tung University, Taiwan, (*2)Research Center for Applied Sciences, Academia Sinica, Taiwan, (*3)Luxtaltek corporation, Taiwan, and (*4)Department of Electronic Engineering, National Chiao Tung University, Taiwan

TuP-PR-16 High excitation effects in single wurtzite GaN quantum dots

*Markus R. Wagner(*1), Gordon Callsen(*1), Gerald H nig(*1), Satoshi Kako(*2), Andrei Schliwa(*1), Juri o Brunnmeier(*1), Christian Kindel(*1), Erik Stock(*1), Yasuhiko Arakawa(*2), and Axel Hoffmann(*1) (*1)Technical University of Berlin, Germany and (*2)University of Tokyo, Japan

TuP-PR-12 Optoelectronic properties of a GaN quantum dot grown on a Al0.5Ga0.5N (112 2) orientated surface
*Toby D Young(*1), Henryk Teisseyre(*2), Julien Brault(*3), Abdelkarim Kahouli(*3,*4), Philippe Vennegues(*3), Mathieu Leroux(*3), Aimeric Courville(*3), Philippe de Mierry(*3), Benjamin Damilano(*3), and Pawel Dluzewski(*1) (*1)Institute of Fundamental Technological Research PAS, Poland, (*2)Institute of Physics PAS, Poland, (*3)Centre de Recherche sur Hetero-Epitaxie et ses Applications, CNRS, Valbonne, France, and (*4)Universite de Nice Sophia Antipolis, France

TuP-PR-17 Optical characterization of selective area growth GaN nanopyramids and nanowires
*Eleonora Secco(*1), N ria Garro(*1), u Andr s e Cantarero(*1), Arne Urban(*2), Carla Ivana Oppo(*2), Joerg Malindretos(*2), and Angela Rizzi(*2) (*1)Materials Science Institute, University of Valencia, Spain and (*2)Institute of Semiconductor Physics, University of G ttingen, Germany o

TuP-PR-19 Comparison of InGaN/GaN blue light emitting diodes grown on Si(111) and sapphire substrate
*Werner Bergbauer(*1), Philipp Drechsel(*1), Bastian Galler(*1), Michael Binder(*1), Patrick Rode(*1), Toni Markurt(*2), Tobias Schulz(*2), Martin Albrecht(*2), Peter Stauss(*1), and Matthias Sabathil(*1) (*1)Osram Opto Semiconductors GmbH, Leibnizstr. 4, Germany and (*2)Leibniz Institute for Crystal Growth, MaxBorn-Str. 2, Germany

TuP-PR-13 Study on Electrical Properties of a Coreshell InGaN/GaN Multiple Quantum Wells Nanowire LED
*Chi-Kang Li(*1), Hung-Chih Yang(*2), Ta-Cheng Hsu(*2), Yu-Jiun Shen(*2), Ai-Sen Liu(*2), and Yuh-Renn Wu(*1) (*1)Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taiwan and (*2)Epistar Corporation, Taiwan

TuP-PR-20 Two-dimensional modeling of gatedphotoluminescence in metal/insulator/n-GaN structures with cylindrical symmetry

*Boguslawa Adamowicz(*1), Maciej Matys(*1), and Tamotsu Hashizume(*2) (*1)Silesian University of Technology, Poland and (*2)Hokkaido University, Japan

TuP-PR-25 Hole injection and electron overow improvement in 365nm light-emitting diodes by bandengineering electron blocking layer
*Yi-Keng Fu(*1), Yu-Hsuan Lu(*2), Rong Xuan(*1,*3), Jenn-Fang Chen(*3), and Yan-Kuin Su(*2) (*1)Electronics and Optoelectronics Reasearch Laboratories, Industrial Technology Research Institute, Taiwan, (*2)Department of Electrical Engineering, Institute of Microelectronics, National Cheng Kung University, Taiwan, and (*3)Electrophysics Department, National Chiao Tung University, Taiwan

TuP-PR-21 The Effect of Piezoelectric Field on Photoelectrochemical Water Splitting

*Yu-Tong Chen(*1), Shu-Yen Liu(*1), Yu-Hsiang Yeh(*1), Ming-Lun Lee(*2), Wei-Chih Lai(*1), and Jinn-Kong Sheu(*1) (*1)Department of Photonics, National Cheng Kung University, Taiwan and (*2)Department of Electro-Optical Engineering, Southern Taiwan University, Taiwan

TuP-PR-26 Enhanced performance of GaN-based lightemitting devices using low-temperature metallic bonding technique
*Wen-Jie Liu(*1,*2), Xiao-Long Hu(*1,*2), Jiang-Yong Zhang(*1), Xue-Qin Lv(*2), Lei-Ying Ying(*1), and BaoPing Zhang(*1,*2) (*1)Department of Physics, Xiamen University, China and (*2)Pen-Tung Sah Micro/Nano Technology Research Center, Xiamen University, China

TuP-PR-22 Nano-scale patterning of GaN LED structures using Langmuir-Blodgett assisted self-assembly process
*Gaurav Gupta(*1), Alexander Usikov(*1), Ramandeep Kaur(*1), Gurram Narayana Rao(*1), Deepak Loomba(*1), Haobijam Johnson Singh(*2), Arijit Ghosh(*2), and Ambarish Ghosh(*2) (*1)De Core Nanosemiconductors Limited, India and (*2)Centre for Nano Science and Engineering, Indian Institute of Science, India

TuP-PR-27 Thermal Analysis of GaN Laser Diodes in a package structure

Mei-Xing Feng(*1,*2,*3), *Shu-Ming Zhang(*1,*2), DeSheng Jiang(*3), Jian-Ping Liu(*1,*2), Hui Wang(*1,*2), Chang Zeng(*1,*2,*3), Zeng-Cheng Li(*1,*2,*3), HuaiBing Wang(*1,*2), Feng Wang(*1,*2), and Hui Yang(*1,*2) (*1)Key Laboratory of Nanodevices and Applications,Chinese Academy of Sciences, China, (*2)Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, China, and (*3)State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, China

TuP-PR-23 Photocurrent analysis of MSM InAlGaN/GaN heterostructure photodetectors

*T Brazzini(*1), S Pandey(*2), M F Romero(*1,*3), A Cavallini(*2), M Feneberg(*3), R Goldhahn(*3), H Behmenburg(*4,*5), C Giesen(*5), M Heuken(*4,*5), and F Calle(*1) (*1)Dpto. Ingenieria Electronica and Instituto de Sistemas Optoelectronicos y Microtecnologia, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Spain, (*2)Department of Physics, University of Bologna, Italy, (*3)Institut f r Experimentelle Physik, Otto-von-Guericke-Universit t u a Magdeburg, Germany, (*4)GaN Device Technology, RWTH Aachen University, Germany, and (*5)AIXTRON SE, Germany

TuP-PR-28 Electromodulation spectroscopy of built-in electric eld in AlGaN/(AlN)/GaN transistor heterostructures with intentional doping in AlGaN barrier
*Robert Kudrawiec(*1), Marta Gladysiewicz(*1), Jan Misiewicz(*1), Mateusz Wosko(*2), Regina Paszkiewicz(*2), Bogdan Paszkiewicz(*2), and Marek Tlaczala(*2) (*1)Institute of Physics, Wroclaw University of Technology, Poland and (*2)The Faculty of Microsystem Electronics and Photonic, Wroclaw University of Technology, Poland

TuP-PR-24 Fabrication of high quality nitride based resonators for vertical-cavity surface-emitting lasers
*Xiaolong Hu(*1,*2), Wen-Jie Liu(*1,*2), Jiangyong Zhang(*1), Guoen Weng(*1,*2), Mingming Liang(*1,*2), Xueqin Lv(*2), Leiying Ying(*1), and Baoping Zhang(*1,*2) (*1)Department of Physics, Xiamen University, China and (*2)Pen-Tung Sah Micro/Nano Technology Research Center, Xiamen University, China

TuP-PR-29 Investigation of properties in GaN-based solar cell with emission wavelength of UV-Blue-Green region
*Seunghwan Kim(*1), Youngho Song(*2), Hyungjo Park(*2), Gyemo Yang(*1), and Seongran Jeon(*2) (*1)Chonbuk National University, Republic of Korea and (*2)Korea Photonics Technology Institute, Republic of Korea

TuP-PR-30 Improved light extraction of vertical light-emitting diodes with periodic micro-cone reector
*Beo deul Ryu, Ji hye Kang, Hyun kyu Kim, Hee yun Kim, Nam Han, Young jae Park, Min Han, Kang bok Ko, and Chang hee Hong Semiconductor Physics Research Center, School of Semiconductor and chemical engineering, Chonbuk National University, Republic of Korea

TuP-PR-37 Luminescence site control of Mg codoped GaN:Eu by NH3-MBE

*Yasufumi Takagi(*1), Tatsuki Otani(*2), Hiroto Sekiguchi(*2), Hiroshi Okada(*2), and Akihiro Wakahara(*2) (*1)Hamamatsu Photonics K. K., Japan and (*2)Toyohashi University of Technology, Japan

TuP-PR-31 Fabricated GaN based LED by using plasma damage minimized sputtering
*Kwang Jeong Son, Min Joo Park, Seung Kyu Oh, Seong Joo Hwang, Seong Min Wie, and Joon Seop Kwak Department of Printed Electronics Engineering ( WCU ), Suncheon National University, Republic of Korea

TuP-PR-38 ZnSiN2 & ZnSnxSi(1-x)N2-based Light Absorber Materials for Photovoltaics & Photoelectrochemistry
*Prineha Narang(*1), Naomi C. Coronel(*1), Lise L. Lahourcade(*1), Kris T. Delaney(*2,*3), Shiyou Chen(*3), Lin-Wang Wang(*3), Nathan S. Lewis(*1), and Harry A. Atwater(*1) (*1)California Institute of Technology, United States of America, (*2)University of California, Santa Barbara, United States of America, and (*3)Lawrence Berkeley National Lab, United States of America

TuP-PR-32 Elevating the internal quantum efciency of GaNbased light-emitting diodes by removing dislocations
*Yen-Hsien Yeh, Yin-Hao Wu, Chung-Ming Chu, Ying-Chia Hsu, Tzu-Yi Yu, Chuo-Han Lee, and Wei-I Lee Department of Electrophysics, National Chiao Tung University, Taiwan

TuP-PR-39 Band gap engineering in YxAl1-xN alloy: a new member of the III-N family
*Nebiha Ben Sedrine(*1,*2), Agne Zukauskaite(*1), Jens Birch(*1), Lars Hultman(*1), and Vanya Darakchieva(*1) (*1)1Department of Physics, Chemistry and Biology, Link ping University, Sweden and (*2)2Instituto Teco nológico e Nuclear and Instituto Superior T cnico, e Universidade T cnica de Lisboa, Portugal e

TuP-PR-33 Thermal management of GaN-based light-emitting diodes with embedded ultrathin graphene oxide pattern
*Nam Han(*1), Cuong Tran Viet(*2), Min Han(*1), Beo Deul Ryu(*1), Chandramohan S(*1), Jong Bae Park(*3), Ji Hye Kang(*1), Young-Jae Park(*1), Kang Bok Ko(*1), Hee Yun Kim(*1), Hyun Kyu Kim(*1), Chel-Jong Choi(*1), and Chang-Hee Hong(*1) (*1)School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Republic of Korea, (*2)College of Engineering, University of Notre Dame, United States of America, and (*3)Korea Basic Science Institute (KBSI), Jeonju Center, Republic of Korea

TuP-PR-40 Variation of luminescence properties in Eu-doped gallium nitride grown on GaN and sapphire substrates by organometallic vapor phase epitaxy
*Ryuta Wakamatsu(*1), Atsushi Koizumi(*1), Dong-Gun Lee(*1), Yoshikazu Terai(*1), Volkmar Dierolf(*2), and Yasufumi Fujiwara(*1) (*1)Division of Materials and Manufacturing Science, Osaka University, Japan and (*2)Physics Department, Lehigh University, United States of America

TuP-PR-34 Control of Eu luminescence centers by codoping of Mg and Si in Eu-doped GaN

*Dong-Gun Lee, Ryuta Wakamatsu, Takanori Matsuno, Ryosuke Hasegawa, Atsushi Koizumi, Yoshikazu Terai, and Yasufumi Fujiwara Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Japan

TuP-PR-41 Electronic structure and spontaneous polarization in ScxAlyGa1-x-yN alloys lattice-matched to GaN: A rst-principles study
*Kazuhiro Shimada(*1), Shigefusa F. Chichibu(*2), Masahiro Hata(*3), Hiroyuki Sazawa(*3), Tomoyuki Takada(*3), and Takayuki Sota(*4) (*1)Department of Electrical, Electronic and Information Engineering, Kanto Gakuin University, Japan, (*2)Institute of Multidisciplinary Research of Advanced Materials, Tohoku University, Japan, (*3)Tsukuba Research Laboratory, Sumitomo-Chemical Co., Ltd., Japan, and (*4)Department of Electrical Engineering and Bioscience, Waseda University, Japan

TuP-PR-35 Microstructure and Dielectric Properties of Piezoelectric Magnetron Sputtered w-ScxAl1-xN Thin Films
*Agne Zukauskaite, Gunilla Wingqvist, Justinas Palisaitis, Per O. A. Persson, Jens Birch, and Lars Hultman Department of Physics, Chemistry, and Biology (IFM), Link ping University, Sweden o

TuP-PR-42 Characterization of ZnSnxGe1-xN2 for Photovoltaic Absorber Layers

*Naomi C Coronel(*1), Lise Lahourcade(*1), Amanda M Shing(*1), Prineha Narang(*1), Kris T Delaney(*2), and Harry A. Atwater(*1) (*1)Department of Applied Physics & Materials Science, Caltech, United States of America and (*2)Materials Research Laboratory, University of California, Santa Barbara, United States of America

TuP-PR-49 Short period InN/GaN superlattices - band structure and its pressure dependence
*Izabela Gorczyca(*1), Tadeusz Suski(*1), Grzegorz Staszczak(*1), Niels Egede Christensen(*2), Axel Svane(*2), Xinqiang Wang(*3), Emmanouil Dimakis(*4), and Theodore Moustakas(*5) (*1)Institute of High Pressure Physics, UNIPRESS, Poland, (*2)Department of Physics and Astronomy, Aarhus University, Denmark, (*3)State Key Laboratory of Articial Microstructure and Mesoscopic Physics, China, (*4)Physics Department, University of Crete, Greece, and (*5)Boston University, United States of America

TuP-PR-43 Photoluminescent and structural properties of AlN:Eu,Si prepared by RF magnetron cosputtering using multiple target materials
*Ryousuke Kagimasa, Syun Kajihara, Keisuke Yoshimura, and Hiroshi Katsumata School of Science and Technology, Meiji University, Japan

TuP-PR-50 Absorption, spontaneous emission, photoluminescence decay time, and lasing from polar inhomogeneous InGaN quantum wells
*Marta Gladysiewicz(*1), Robert Kudrawiec(*1), Marcin Syperek(*1), Jan Misiewicz(*1), Marcin Siekacz(*2), Grzegorz Cywinski(*2), and Czeslaw Skierbiszewski(*2) (*1)Institute of Physics, Wroclaw University of Technology, Poland and (*2)Institute of High Pressure Physics, Polish Academy of Science, Poland

TuP-PR-44 Optical and magnetic properties of rare-earth doped GaN

*Ben Hourahine Department of Physics, SUPA, University of Strathclyde, United Kingdom

TuP-PR-45 Morphology and microstructure of epitaxial ScAlN lms grown on GaN by molecular beam epitaxy
*Stephan M. Knoll(*1), Harvey E. Beere(*1), Menno J. Kappers(*1), Colin J. Humphreys(*1), David A. Ritchie(*1), and Michelle A. Moram(*2) (*1)University of Cambridge, United Kingdom and (*2)Imperial College London, United Kingdom

TuP-PR-51 Wavelength dependence of internal electric eld on local structure of green-yellow InGaN/GaN quantum wells
*Jong-Il Hwang, Rei Hashimoto, Shinji Saito, and Shinya Nunoue Corporate Research & Development Center, Toshiba Corporation, Japan

TuP-PR-46 Strong Exciton-Phonon Interaction in AlGaN/AlN Quantum Wells

*Ryan Ganipan Banal, Mitsuru Funato, and Yoichi Kawakami Department of Electronic Science and Engineering, Kyoto University, Japan

TuP-PR-52 Phonon plasmon coupling in AlGaN and InGaN

*Ronny Kirste, Stefan Mohn, Markus R. Wagner, Juan S. Reparaz, and Axel Hoffmann TU Berlin, Institut f r Festk rperphysik, Germany u o

TuP-PR-53 Modication of InGaN/GaN MQW LED devices by High Current Injection.

*Mark N Lockrey(*1), Maree Wintrebert-Fouque(*2), and Matthew R Phillips(*1) (*1)University of Technology, Sydney, Australia and (*2)BluGlass Limited, Australia

TuP-PR-47 Excitation energy dependence of minority carrier transient spectroscopy spectra of n-GaN
*Honda Unhi(*1), Shibata Tatsunari(*1), Yamada Yujiro(*1), Tokuda Yutaka(*1), Shiojima Kenji(*2), Ueda Hiroyuki(*3), Narita Tetsuo(*3), Uesugi Tsutomu(*3), and Kachi Tetsu(*3) (*1)Aichi Institute of Technology, Japan, (*2)University of Fukui, Japan, and (*3)Toyota Central R&D Lab., Inc., Japan

TuP-PR-54 Carrier localization in graded-shape InGaN/GaN quantum wells

*Juras Mickevicius, Darius Dobrovolskas, Ramunas Aleksiejunas, Arunas Kadys, Tadas Malinauskas, Tomas Grinys, and Gintautas Tamulaitis Institute of Applied Physics and Semiconductor Physics Department, Vilnius University, Lithuania

TuP-PR-48 Optical polarization properties of c-plane GaN/AlGaN superlattices under uniaxial strain
*Shunfei Fan, Zhixin Qin, Xinqiang Wang, Bo Shen, and Guoyi Zhang State Key Laboratory for Articial Microstructure and Mesoscopic Physics, School of Physics, Peking University, China

TuP-PR-56 Bias-dependent photoluminescence analysis on InGaN/GaN MQW solar cells with various indium compositions measurement
*Jae-Phil Shim(*1), Hoonil Jeong(*1), Sang-Bae Choi(*1), Youngho Song(*2), Young-Dahl Jho(*1), and Dong-Seon Lee(*1) (*1)Gwangju Institute of Science and Technology (GIST), Republic of Korea and (*2)Korea Photonics Technology Institute (KOPTI), Republic of Korea

TuP-PR-63 High internal quantum efciency blue-green LED with small efciency droop fabricated on low dislocation density GaN substrate
*Tomotaka Sano(*1), Tomohiro Doi(*1), Tomohiko Sugiyama(*2), Yoshio Honda(*1), Hiroshi Amano(*1), and Takashi Yoshino(*2) (*1)Department of Electrical Engineering and Computer Science, Nagoya University, Japan and (*2)Corporated R&D, NGK Insulators, LTD, Japan

TuP-PR-57 The effect of substrate on the GaN on Si substrate by photoreectance and photoluminescence
*Akio Suzuki(*1), Atsuhiko Fukuyama(*1), Masahito Yamaguchi(*2), and Tetsuo Ikari(*1) (*1)Faculty of Engineering, University of Miyazaki, Japan and (*2)Department of Electrical Engineering and Computer Science, Nagoya University, Japan

TuP-PR-64 Consequences of Injected Carrier Density on Localisation and Efciency Droop in InGaN/GaN Quantum Well Structures
*Tom J Badcock(*1), Simon Hammersley(*1), Duncan Watson-Parris(*1), Phil Dawson(*1), Mike J Godfrey(*1), Menno J Kappers(*2), Clifford Mcaleese(*2), Rachel A Oliver(*2), and Colin J Humphreys(*2) (*1)School of Physics and Astronomy, University of Manchester, United Kingdom and (*2)Department of Materials Science and Metallurgy, University of Cambridge, United Kingdom

TuP-PR-58 Droop in GaN epilayers: the role of stimulated emission

*Gintautas Tamulaitis(*1), Juras Mickevicius(*1), Jonas Jurkevicius(*1), Michael S. Shur(*2), Jinwei Yang(*3), and Remis Gaska(*3) (*1)Semiconductor Physics Department and IAR, Vilnius University, Lithuania, (*2)Department of ECE and CIE, Rensselaer Polytechnic Institute, United States of America, and (*3)Sensor Electronic Technology, Inc., United States of America

TuP-PR-65 Study on efciency component estimation by electroluminescence and photoluminescence intensities

*Kazuki Aoyama(*1), Atsushi Suzuki(*2), Tsukasa Kitano(*2), Satoshi Kamiyama(*1), Tetsuya Takeuchi(*1), Motoaki Iwaya(*1), and Isamu Akasaki(*1) (*1)Department of materials science and engineering ,Meijo university, Japan and (*2)El-seed Inc., Japan

TuP-PR-60 Experimental determination of current spill-over and its temperature dependency; the effect of the spill-over on the efciency droop
*Jung-Hoon Song(*1), Ki-Nam Park(*1), Moon-Taek Hong(*1), Byung-Jun Ahn(*1), Tae-Soo Kim(*1), HwanKuk Yuh(*2), Sung-Chul Choi(*2), and Yongboo Moon(*2) (*1)Department of Physics, Kongju National University, Republic of Korea and (*2)THELEDS Ltd., Republic of Korea

TuP-PR-66 Reduction of efciency droop in InGaN light emitting diodes by defect selective passivation
*Jet-Rung Chang(*1,*3), Shih-Pang Chang(*1), S.-C. Luo(*1), Rong Xuan(*3), Yuh-Jen Cheng(*2), Hao-Chung Kuo(*1), and Chun-Yen Chang(*1) (*1)National Chiao Tung University, Taiwan, (*2)Academia Sinica, Taiwan, and (*3)Industrial Technology Research Institute, Taiwan

TuP-PR-61 Investigation of the Efciency Droop Mechanism in InGaN Blue LEDs by Using the TemperatureDependent Photovoltaic Characteristics
*Dong-Pyo Han, Min-Goo Kang, Chan-Hyuong Oh, Hyunsung Kim, Dong-Soo Shin, and Jong-In Shim Hanyang University, Republic of Korea

TuP-PR-67 Carrier Dynamics Analysis of Efciency Droop in GaN-Based Light Emitting Diodes Grown on Patterned and Planar Sapphire Substrates
*Yang-Seok Yoo(*1), Song-Mei Li(*1), Je-Hyung Kim(*1), Su-Hyun Gong(*1), Jong-Ho Na(*2), and Yong-Hoon Cho(*1) (*1)1Department of Physics and Graduate School of Nanoscience & Technology (WCU), Republic of Korea and (*2)LG Innoteck, LED Devision, LED R&D Center, Wollong industry site, Naepo-ri, Republic of Korea

TuP-PR-62 Promotion of hole injection enabled by GaInN/GaN light-emitting triodes and its effect on the efciency droop
*Sunyong Hwang(*1), Junhyuk Park(*1), Dong-Yeong Kim(*1), Woo jin Ha(*1), Jong kyu Kim(*1), Jiuru Xu(*2), Jaehee Cho(*2), and E. Fred Schubert(*2) (*1)Department of Materials Science and Engineering, POSTECH, Republic of Korea and (*2)Future Chips Constellation, Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, United States of America

TuP-PR-68 Proposal of new measurement method for internal quantum efciency of light-emitting diodes
*Byungjin Ma Korea Electronics Technology Institute, Republic of Korea

TuP-ED-1 Nonpolar a-plane AlGaN/GaN heterostructure eld-effect transistor grown on freestanding GaN substrate
*Masataka Mizuno(*1), Yasuhiro Isobe(*1), Kazuya Ikeda(*1), Mami Isiguro(*1), Motoaki Iwaya(*1), Tetuya Takeuchi(*1), Satoshi Kamiyama(*1), Isamu Akasaki(*1,*3), and Hiroshi Amano(*2,*3) (*1)Faculty of Science and Technology, Meijo University, Japan, (*2)Graduate School of Engineering, Nagoya University, Japan, and (*3)Akasaki Research Center, Nagoya University, Japan

TuP-ED-7 Study of in-situ curvature measurements and plastic deformation during the growth of GaN on various Si substrates
*Yuto Tomita(*1), Armin Dadgar(*2), Stepahie Fritze(*1,*2), Thomas Hempel(*2), J rgen Bl sing(*2), u a Hartmut Witte(*2), Annette Diez(*2), Oliver Schulz(*1), Kolja Harberland(*1), J rgen Christen(*2), and Alois u Krost(*2) (*1)LayTec AG, Germany and (*2)Otto-von GuerickeUniversit t Magdeburg, Germany a

TuP-ED-2 The Reduction of Buffer Leakage with Mn-doped GaN Buffer by Metal Organic Chemical Vapor Deposition
*Taiki Yamamoto(*1), Hiroyuki Sazawa(*1), Naohiro Nishikawa(*1), Maki Kiuchi(*2), Toshihide Ide(*2), Mitsuaki Shimizu(*2), Takayuki Inoue(*1), and Masahiko Hata(*1) (*1)Sumitomo Chemical Co., Ltd., Japan and (*2)National Institute of Advanced Industrial Science and Technology, Japan

TuP-ED-8 Dynamic Breakdown of AlGaN/GaN HEMTs on High Resistance Si Substrate

*Ting-Fu Chang and Chih-Fang Huang Institute of Electronic Engineering, National Tsing Hua University, Taiwan

TuP-ED-9 Polarity effect on the Photoelectrochemical Properties of Ga-faced and N-faced Free Standing GaN Substrate
*Hyojung Bae(*1), Nakamura Akihiro(*2), Fujii Katsushi(*2), Hyung-Jo Park(*3), Tak Jeong(*3), Jun-Seok Ha(*1), Youngboo Moon(*4), and Taesung Oh(*5) (*1)Chonnam National University, Republic of Korea, (*2)University of Tokyo, Japan, (*3)Korea Photonics Technology Institute, Republic of Korea, (*4)THELEDS Co., Republic of Korea, and (*5)Hongik University, Republic of Korea

TuP-ED-3 GaN-on-Sapphire Technology for High Temperature Electronics

*Patrick Herfurth(*1), David Maier(*1), Yakiv Men(*1), Rudolf R sch(*2), Lorenzo Lugani(*3), Jean-Francois Caro lin(*3), Nicolas Grandjean(*3), and Erhard Kohn(*1) (*1)Institute of Electron Devices and Circuits, Ulm University, Germany, (*2)Institute of Optoelectronics, Ulm University, Germany, and (*3)Laboratory of Advanced Semiconductors for Photonics and Electronics, EPFL, Swiss

TuP-ED-4 European SiC substrates for high efcient and low leakage AlGaN/GaN HEMTs and MMICs
*Peter Br ckner(*1), u Stefan M ller(*1), u Thomas Maier(*1), Stephan Maroldt(*1), Sabine Storm(*2), Michael Mikulla(*1), and Oliver Ambacher(*1) (*1)Fraunhofer Institute for Applied Solid State Physics, Germany and (*2)SiCrystal AG, Germany

TuP-ED-10 Experimental Demonstration of a ChemoMechanically Polished N-polar GaN/III-As Wafer Bonded Current Aperture Vertical Electron Transistor
*Jeonghee Kim, Shalini Lal, Jing Lu, Steven P Denbaars, and Umesh K. Mishra Department of Electrical and Computer Engineering, University of California, Santa Barbara, United States of America

TuP-ED-5 Reverse Gate Bias Stress on high-voltage AlGaN/GaN-on-Si Heterostructure FETs

*Shinhyuk Choi, Jae-Gil Lee, Ho-Young Cha, and Hyungtak Kim Hongik University, Republic of Korea

TuP-ED-11 Monolithic Optoelectronic Integration of GaN High-Voltage Power FETs and LEDs with a Selective Epi Removal Process
*John Waldron, Robert Karlicek, and T. Paul Chow RPI, United States of America

TuP-ED-6 Effect of wafer curvature on the properties of two dimensional electron gas in AlGaN/GaN heterostructure on 6-inch silicon substrate
*Jong Hoon Shin, Jun Ho Kim, Kwang-Choong Kim, and Tae Hoon Jang IGBT part, System IC R&D, LG Electronics, Republic of Korea

TuP-ED-12 Resonant tunneling current in zinc-blende (cubic) Al0.3Ga0.7N/GaN double barrier structures
*Norzaini Zainal(*1), Sergei V Novikov(*2), Christopher J Mellor(*2), Christopher T Foxon(*2), and Anthony J Kent(*2) (*1)School of Physics, Universiti Sains Malaysia, Malaysia and (*2)School of Physics and Astronomy, University of Nottingham, United Kingdom

TuP-ED-13 Probing Structural and Electrical Properites of Single GaN Nanorod p-n Junctions
Yu-Jung Lu(*1), *Ming-Yen Lu(*2), Yu-Chen Yang(*1), Hung-Ying Chen(*1), Hong-Mao Lee(*1), Lih-Juann Chen(*2), and Shangjr Gwo(*1) (*1)Department of Physics, National Tsing-Hua University, Taiwan and (*2)Department of Material Science and Engineering, National Tsing-Hua University, Taiwan

TuP-ED-19 Device optimisation of AlGaN/GaN-based nitrate sensors using ion selective membranes.
*F. L. M. Khir(*1), M. Myers(*2,*3), A. Podolska(*1), G. Parish(*1), and B. Nener(*1) (*1)School of Electronics, Electrical and Computer Engineering, University of Western Australia, Australia, (*2)School of Chemistry and Biochemistry, University of Western Australia, Australia, and (*3)CSIRO Earth Science and Resource Engineering, 6151, Australia

TuP-ED-15 AlGaN/GaN biosensor for monitoring calcium intake by live cells

*Anna Podolska The University of Western Australia, Australia

TuP-ED-20 Investigation of Non-Volatile Memory Effect in SiNx/GaN/AlGaN/GaN Heterojunction Structure

*Jae-Gil Lee(*1), Bong-Ryeol Park(*1), Hyungtak Kim(*1), Kwang-Seok Seo(*2), and Ho-Young Cha(*1) (*1)Hongik University, Republic of Korea and (*2)Seoul National University, Republic of Korea

TuP-ED-16 Observation of Photo-emission from GaN p-n Diode Inspiring Existence of Photon-recycling Effect Leading on to Extremely Low On-resistance
*Yuya Ishida(*1), Tomoyoshi Mishima(*2), Kazuhiro Mochizuki(*3), Yoshitomo Hatakeyama(*1), Kazuki Nomoto(*4,*5), Naoki Kaneda(*2), Tadayoshi Tsuchiya(*2), Akihisa Terano(*3), Tomonobu Tsuchiya(*3), Hiroyuki Uchiyama(*3), Satoru Tanaka(*3), Akio Shima(*3), and Tohru Nakamura(*1) (*1)Dept.of Electronics, Electrical & Computer Engineering, Hosei University, Japan, (*2)Research & Development Laboratory, Hitachi Cable, Ltd, Japan, (*3)Central Research Laboratory, Hitachi, Ltd, Japan, (*4)Research Center for Micro-Nano Technology, Hosei University, Japan, and (*5)Department of Electrical Engineering, University of Notre Dame, IN 46556, United States of America

October 16

Session TuP-LN

Poster Session 2 Late News

Room : Main Hall 16:00 - 18:00 TuP-LN-1 16:00 - 18:00 Growth and characterisation of homo-epitaxial GaN layers grown on bulk ammono-thermal GaN substrates
*Fabrice Oehler, Tongtong Zhu, Tim Putchler, Sneha Rhode, Menno J Kappers, Colin J Humphreys, and Rachel A Oliver Dpt of Materials Science and Metallurgy, University of Cambridge, United Kingdom

TuP-ED-17 Mechanism of Reduction in On-resistance of Small GaN p+n Diodes

*Kazuhiro Mochizuki(*1), Tomoyoshi Mishima(*2), Kazuki Nomoto(*3), Akihisa Terano(*1), and Tohru Nakamura(*3,*4) (*1)Central Research Laboratory, Hitachi, Ltd., Japan, (*2)Research & Development Laboratory, Corporate Advanced Technology Group, Hitachi Cable, Ltd., Japan, (*3)Research Center for Micro-Nano Technology, Hosei University, Japan, and (*4)Department of Electronics, Electrical & Computer Engineering, Hosei University, Japan

TuP-LN-2 16:00 - 18:00 Homoepitaxial HVPE growth on ammonothermal GaN seed

*Tomasz Sochacki Institute of High Pressure Physics PAS, Poland

TuP-LN-3 16:00 - 18:00 200-mm GaN on Si based blue LED wafer with high emission uniformity
*Atsushi Nishikawa, Lars Groh, William Solari, and Stephan Lutgen AZZURRO Semiconductors AG, Germany

TuP-ED-18 H2 generation by solar water splitting using nanostructured GaN electrode

*Wei-Jhih Tseng(*1,*2), L. Zhang(*1,*2), Ruben R. Lieten(*1,*2), Philippe M. Vereecken(*1,*3), and Gustaaf Borghs(*1,*2) (*1)imec, Kapeldreef 75, 3001 Leuven, Belgium, (*2)Department of Physics and Astronomy, K.U. Leuven, Belgium, and (*3)Centre of Surface Chemistry and Catalysis, K.U., Belgium

TuP-LN-4 16:00 - 18:00 Substrate Lifted-off 270 nm Emission Lateral Conduction LED with a Micro-pixel Geometry
Fatima Asif(*1), Rex Chen(*1), Antwon Coleman(*1), Iftikhar Ahmad(*2), Mohamad Lachab(*1), Bin Zhang(*2), Qhalid Fareed(*2), *Vinod Adivarahan(*2), and Asif Khan(*1) (*1)University of South Carolina, United States of America and (*2)Nitek, Inc, United States of America

TuP-LN-5 16:00 - 18:00 Effect of Schottky barrier on GaN-based MSM UV detector

*Xiaojuan Sun(*1), Dabing Li(*1), Hang Song(*1), Yiren Chen(*1,*2), Hong Jiang(*1), Guoqing Miao(*1), and Zhiming Li(*1) (*1)State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, China and (*2)Graduate University of Chinese Academy of Sciences, China

TuP-LN-11 16:00 - 18:00 Determination of Lateral Extension of Extrinsic Photon Recycling in p-GaN
*Kazuhiro Mochizuki(*1), Tomoyoshi Mishima(*2), Yuya Ishida(*3), Yoshitomo Hatakeyama(*3), Kazuki Nomoto(*4), Naoki Kaneda(*2), Tadayoshi Tsuchiya(*2), Akihisa Terano(*1), Tomonobu Tsuchiya(*1), Hiroyuki Uchiyama(*1), Shigehisa Tanaka(*1), and Tohru Nakamura(*3,*4) (*1)Central Research Laboratory, Hitachi, Ltd., Japan, (*2)Research & Development Lab., Corp. Advanced Tech. Group, Hitachi Cable, Ltd., Japan, (*3)Dept. of Electronics, Electrical & Computer Engineering, Hosei University, Japan, and (*4)Research Center for Micro-Nano Technology, Hosei University, Japan

TuP-LN-6 16:00 - 18:00 Novel approaches to InGaN-based solar cells

*S. Valdueza-Felip(*1), A. Mukhtarova(*1), Q. Pan(*1), A. Das(*1), L. Grenet(*2), C. Durand(*1), M.-P. Chauvat(*3), D. Peyrade(*4), F. Gonz lez-Posada(*1), P. Ruterana(*3), J. a Eymery(*1), and E. Monroy(*1) (*1)CEA-Grenoble, INAC/SP2M/NPSC, France, (*2)CEAGrenoble, LITEN, France, (*3)CIMAP, CNRS-ENSICAENCEA-UCBN, France, and (*4)CEA-Grenoble, LTM-CNRS, ENSPG, France

TuP-LN-12 16:00 - 18:00 Reforming of Al2O3 gate dielectric on n-GaN by high-pressure water vapor annealing
*Koji Yoshitsugu(*1), Masahiro Horita(*1,*2), Yasuaki Ishikawa(*1,*2), and Yukiharu Uraoka(*1,*2) (*1)Nara Institute of Science and Technology (NAIST), Japan and (*2)Core Research for Evolutional Science and Technology (CREST), Japan

TuP-LN-8 16:00 - 18:00 Time-resolved photoluminescence of highaluminum-content (Al,Ga)N quantum wells and epilayers emitting in the 215-255 nm range.
*Pierre Lefebvre(*1,*2), Christelle Brimont(*1,*2), Pierre Valvin(*1,*2), Hideto Miyake(*3), Kazumasa Hiramatsu(*3), and Bernard Gil(*1,*2) (*1)CNRS, Laboratoire Charles Coulomb, Montpellier., France, (*2)Universit Montpellier 2, Laboratoire Charles e Coulomb, Montpellier., France, and (*3)Department of Electrical and Electronic Engineering, Mie University., Japan

TuP-LN-13 16:00 - 18:00 Improved DC and RF Characteristics in GaN HEMT using GaN/AlGaN Composite Buffer Layer
*Fu-Chuan Chu(*1), Atanu Das(*2), Sheng-Yu Liao(*3), and Ray-Ming Lin(*4) (*1)Graduate Institute of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taiwan, (*2)Graduate Institute of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taiwan, (*3)Graduate Institute of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taiwan, and (*4)Graduate Institute of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taiwan

TuP-LN-9 16:00 - 18:00 The effective dislocation reduction of GaN epilayers on a cone-shape patterned sapphire substrates
*Jung Yeop Hong(*1), Do Han Lee(*2), Sung Wook Moon(*1), Jun Hyuck Kwon(*2), and Dong Jin Byun(*1,*2) (*1)Department of Nano-Photonics Engineering, Korea University, Republic of Korea and (*2)Department of Material Science and Engineering, Korea University, Republic of Korea

October 16

Rump Session

TuP-LN-10 16:00 - 18:00 High-Performance Vertical-type GaN MOSFET with Mesa-gate structure
*Ki-Won Kim, Mi-Kyung Kwon, Hee-Sung Kang, YoungWoo Jo, Ki-Sik Im, and Jung-Hee Lee Kyungpook National University, Republic of Korea

What is the best substrate for nitride devices ?

Room : Conference Hall 18:30 - 20:30

October 16

Rump Session

Physics and Engineering of Light Extraction

Room : 107/108 18:30 - 20:30

October 16

Rump Session

GR2-4 10:00 - 10:15 Temperature Dependence of Growth of Bulk AlN using Alumina as Source Material
*Mikako Kato, Makoto Ohtsuka, and Hiroyuki Fukuyama Tohoku University, Japan

Strategies to overcome efciency droop in high-power LEDs

Room : Mid-sized Hall 18:30 - 20:30

GR2-5 10:15 - 10:30 Perpetuating structural perfection of bulk AlN single crystals using PVT growth on AlN seeds cut from freestanding crystals
*Carsten Hartmann, J rgen Wollweber, Andrea Dittmar, u Christo Guguschev, Frank Langhans, and Matthias Bickermann Leibniz Institute for Crystal Growth, Germany

October 16

Rump Session

What is the appropriate gate structure for power applications ?

Room : Small Hall 18:30 - 20:30

October 17

Parallel Session OD2

Nano Devices
Room : 107/108 October 17 9:00 - 10:30

Parallel Session GR2

Bulk II
Room : Conference Hall 9:00 - 10:30 GR2-1 (invited) 9:00 - 9:30 High Nitrogen Pressure Solution (HNPS) growth of GaN in MFS conguration. Highly conductive and semi-insulating crystals. Role of impurities: oxygen, magnesium and beryllium.
*Michal Bockowski Institute of High Pressure Physics PAS, Poland

OD2-1 (invited) 9:00 - 9:30 Near Infrared Electroluminescence from n-InN/pGaN and n-InN nanodots/p-Si Light-Emitting Diodes
Guoguang Wu(*1), Yuantao Zhang(*1), Wancheng Li(*1), Fubin Gao(*1), Xupu Cai(*1), Qiang Jing(*1), Hongwei Liang(*2), Baolin Zhang(*1), Xinqiang Wang(*3), and *Guotong Du(*1,*2) (*1)College of Electronic Science and Engineering, Jilin University, China, (*2)School of Physics and Optoelectronic Technology, Dalian University of Technology, China, and (*3)School of Physics, Peking University, China

GR2-2 9:30 - 9:45 Direct evidence for the microstructural origin of cracks in thick GaN crystals during the crystal growth by hydride vapour phase epitaxy (HVPE)
*Elke Meissner(*1), Michael Knetzger(*1,*2), Jochen Friedrich(*1), Isabel Knoke(*2), and Erdmann Spiecker(*2) (*1)Fraunhofer Institute of Integrated Systems and Device Technology, Germany and (*2)Center for Nanoanalysis and Electron Microscopy (CENEM), Werkstoffwissenschaften VII, University Erlangen-Nuremberg, Germany

OD2-2 9:30 - 9:45 New method for the fabrication of high-Q (> 6300) 1D photonic crystal nanobeam cavities in GaN/AlN quantum dot stacks grown on SiC
*Sylvain Sergent(*1), Munetaka Arita(*1), Satoshi Kako(*1), Katsuaki Tanabe(*1), Satoshi Iwamoto(*1,*2), and Yasuhiko Arakawa(*1,*2) (*1)NanoQuine, The University of Tokyo, Japan and (*2)Institute of Industrial Science, The University of Tokyo, Japan

GR2-3 9:45 - 10:00 Development and Progress of Bulk c-plane AlN Single-Crystalline Template Growth for LargeArea Native Seeds
*Radhakrishnan Sumathi and Peter Gille Crystallography section, Ludwig Maximilians University, Munich., Germany

OD2-3 9:45 - 10:00 Light extraction in GaN LEDs: from surfaceroughened thin-lm chips to volumetric chips
*Aurelien David Soraa Inc., United States of America

OD2-4 10:00 - 10:15 Wafer-scale photonic crystals fabrication using anodic aluminum oxide template and nanoimprint lithography
*Xing Xing Fu, Zhi Zhong Chen, Bei Zhang, Xiang Ning Kang, Xian Zhe Jiang, Shuang Jiang, Tong Jun Yu, Yu Zhen Tong, and Guo Yi Zhang School of Physics, Peking University, China

OD2-5 10:15 - 10:30 Flip-Chip GaN-based LEDs with Embedded Photonic Crystals
*Dobri Simeonov(*1), Jason Jewell(*1), Claude Weisbuch(*1,*2), and James Speck(*1) (*1)Department of Materials, University of California, Santa Barbara, California, United States of America and (*2)Laboratoire de Physique de la Mati` re Condens e, e e Ecole Polytechnique, Palaiseau, France

PR3-4 10:00 - 10:15 Relations between Strain and Defects in Si-doped (Al)GaN
Kamran Forghani(*1), Lukas Schade(*2), Ulrich T. Schwarz(*2), Frank Lipski(*1), Oliver Klein(*3), Ute Kaiser(*3), and *Ferdinand Scholz(*1) (*1)Institute of Optoelectronics, Ulm University, Ulm, Germany, (*2)Fraunhofer IAF, Freiburg, Germany, and (*3)Central Facility of Electron Microscopy, Ulm University, Germany

October 17

Parallel Session PR3

PR3-5 10:15 - 10:30 Strain Rate Controlled Nanoindentation Examination and Incipient Plasticity in Bulk GaN Crystal
*Masaki Fujikane(*1), Toshiya Yokogawa(*1), Shijo Nagao(*2), and Roman Nowak(*3) (*1)Device Module Development Center, Panasonic Co., Japan, (*2)NTNU Nanomechanical Lab., Norwegian Univ. of Sci. and Tech., Norway, and (*3)Nordic Hysitron Lab., School of Chem. Tech., Aalto Univ., Finland

Structural Analysis
Room : Mid-sized Hall 9:00 - 10:30 PR3-1 (invited) 9:00 - 9:30 Measurement of composition in InGaN nanostructures using scanning transmission electron microscopy
*Andreas Rosenauer(*1), Knut M ller(*1), Thorsten u Mehrtens(*1), Marco Schowalter(*1), Alexander W rfel(*1), Timo Aschenbrenner(*1), Carsten Kruse(*1), u Detlef Hommel(*1), Lars Hoffmann(*2), Andreas Hangleiter(*2), Pyuck-Pa Choi(*3), and Dirk Raabe(*3) (*1)Institute of Solid State Physics, University of Bremen, Germany, (*2)TU Braunschweig, Institute of Applied Physics, Braunschweig, Germany, and (*3)Max-PlanckInstitut f r Eisenforschung GmbH, D sseldorf, Germany u u

October 17

Parallel Session PR4

Long Wavelength
Room : 204 9:00 - 10:30 PR4-1 (invited) 9:00 - 9:30 Challenges for Growing Ordered InGaN Ternary Alloys: Proposal of SMART III-N Tandem Solar Cells Using InN/GaN Short-period Superlattices
*Akihiko Yoshikawa Chiba University, Japan and Kogakuin University, Japan

PR3-2 9:30 - 9:45 Beyond the Matthews-Blakeslee model: Predicting dislocation climb and glide in III-nitride semiconductors during growth
*Wai yuen Fu(*1), Colin J. Humphreys(*1), and Michelle A. Moram(*2) (*1)Department of Materials Science and Metallurgy, University of Cambridge, United Kingdom and (*2)Department of Materials, Imperial College London, United Kingdom

PR4-2 9:30 - 9:45 Compensation and passivation of InN surface donors by Mg dopants and sulphur
*Wojciech M. Linhart(*1), Jessica Chai(*2), Chris F. Mcconville(*1), Steve M. Durbin(*2,*3), and T D. Veal(*1,*4) (*1)Department of Physics, University of Warwick, United Kingdom, (*2)The MacDiarmid Institute for Advanced Materials and Nanotechnology, New Zealand, (*3)Department of Electrical Engineering and Department of Physics, State University of New York at Buffalo, United States of America, and (*4)Stephenson Institute for Renewable Energy and Department of Physics, University of Liverpool, United Kingdom

PR3-3 9:45 - 10:00 A density functional theory study of the pipe diffusion of Si, Mg, Ga, N and vacancies in dislocation cores in GaN
*Matthew K Horton(*1), Gabor Cs nyi(*2), and Michelle A a Moram(*1) (*1)Department of Materials, Imperial College London, United Kingdom and (*2)Department of Engineering, University of Cambridge, United Kingdom

PR4-3 9:45 - 10:00 Mid and Far-Infrared analysis of the local electronlattice dynamics on carrier recombination processes of InN lms
*Daichi Imai(*1), Yoshihiro Ishitani(*1), Xinqiang Wang(*3), Kazuhide Kusakabe(*2), and Akihiko Yoshikawa(*2) (*1)Graduate School of Electric and Electronic Engineering, Chiba University, Japan, (*2)Center of SMART Green Innovation Research, Chiba University, Japan, and (*3)School of Physics, Peking University, China

PR4-4 10:00 - 10:15 Interface phonon polariton and infrared optical absorption in nitride thin lms
*Yoshihiro Ishitani Graduate School of Electronics and Electronic Engineering, Chiba University, Japan

ED4-4 10:00 - 10:15 Thermal Performance of GaN Vertical and Lateral Power Transistors
*Yuhao Zhang, Min Sun, Tatsuya Fujishima, Kevin R Bagnall, Zhihong Liu, Evelyn N Wang, and Tom s Palacios a Microsystems Technology Laboratories, Massachusetts Institute of Technology, United States of America

PR4-5 10:15 - 10:30 Nonlinear spectral hole-burning of the intraband transition at 1.55 m in GaN/AlN quantum dots
Dac Trung Nguyen(*1), Maria Tchernycheva(*2), Francois Julien(*2), Eva Monroy(*3), Bernard Gil(*4), and *Guillaume Cassabois(*1,*4) (*1)Laboratoire Pierre Aigrain, Ecole Normale Superieure, Paris, France, (*2)IEF, Universite Paris-Sud XI, Orsay, France, (*3)Equipe Mixte CEA-CNRS-UJF, Grenoble, France, and (*4)Laboratoire Charles Coulomb, CNRS, Universite Montpellier 2, Montpellier, France

ED4-5 10:15 - 10:30 Design of AlGaN/GaN HFETs with high breakdown voltage with carbon-doped GaN on conductive GaN substrate
*Takayuki Sugiyama(*1), Yoshio Honda(*1), Masahito Yamaguchi(*1), Hiroshi Amano(*1), Mamoru Imade(*2), and Yusuke Mori(*2) (*1)Department of Electrical Engineering and Computer Science, Nagoya University, Japan and (*2)Department of Electrical Electronic and Information Engineering, Osaka University, Japan

October 17

Parallel Session ED4

October 17

GaN Transistor on Si or GaN Substrate

Room : Small Hall 9:00 - 10:30 ED4-1 (invited) 9:00 - 9:30 GaN-on-Si: Recent progress for high performance power devices
*Marianne Germain, Stefan Degroote, Bram Sijmus, Domenica Visalli, and Joff Derluyn EpiGaN nv, Belgium

Joint Session J3 (OD,PR)

Droop
Room : Main Hall 11:00 - 12:30 J3-1 (invited) 11:00 - 11:30 Unraveling the Mystery of the Efciency Droop in GaInN LEDs
*E. Fred Schubert Rensselaer Polytechnic Institute, United States of America

ED4-2 9:30 - 9:45 AlxGa1-xN/GaN high electron mobility transistors using 200 mm GaN-based epitaxy on Si(111) substrate
R. S. Kajen(*1), S. B. Dolmanan(*1), L. K. Bera(*1), Joyce P. Y. Tan(*1), Vivian K. X. Lin(*1), S. L. Teo(*1), W. Z. Wang(*2), S. Todd(*2), M. Krishna kumar(*1), G. Q. Lo(*2), and *Sudhiranjan Tripathy(*1) (*1)Institute of Materials Research and Engineering, A*STAR, Singapore and (*2)Institute of Microelectronics, A*STAR, Singapore

J3-2 11:30 - 11:45 High power ip-chip GaN based LEDs with reduced efciency droop
*Dmitry A Zakheim(*1,*3), Dmitry A Bauman(*2), and Alexey S Pavluchenko(*1,*2) (*1)Ioffe Physico-Technical Institute, Russia, (*2)SvetlanaOptoelectronics JSC, Russia, and (*3)Epi-Center JSC, Russia

J3-3 11:45 - 12:00 Predicting Physical Properties of InGaN LEDs from Atomic Scale Structure
*Yuh-Renn Wu(*1), Ravi Shivaraman(*2), Kuang-Chung Wang(*1), Chih-Chien Pan(*2), and James S. Speck(*2) (*1)Graduate institute of Photonics and Optoelectronics, National Taiwan University, Taiwan and (*2)Materials Department, University of California, Santa Barbara, United States of America

ED4-3 9:45 - 10:00 The investigation of normally-off characteristics of p-GaN gate HFET on 6-inch Si substrate using AlN interlayer
*Y. S. Eum, Woong-Sun Kim, Jinhong Park, Kwang-Choong Kim, E.j. Hwang, and T. Jang IGBT part, System IC R&D, LG Electronics, Republic of Korea

J3-4 (invited) 12:00 - 12:30 Comprehensive Understanding of Efciency Droop by the Saturated Radiative Recombination Rate in InGaN-based Light-Emitting Diodes
*Jong-In Shim(*1), Dong-Soo Shin(*1), Hyunsung Kim(*1), and Han-Youl Ryu(*2) (*1)Hanyang University, Republic of Korea and (*2)Inha University, Republic of Korea

October 17

October 17

Parallel Session GR3

Parallel Session GR4

MOCVD / HVPE I
Room : Conference Hall 11:00 - 12:30 Room : 204 GR3-1 (invited) 11:00 - 11:30 Extremely narrow violet photoluminescence line from ultrathin InN single quantum well on stepfree GaN surface
*Tetsuya Akasaka, Hideki Gotoh, Yasuyuki Kobayashi, and Hideki Yamamoto NTT Basic Research Laboratories, NTT Corporation, Japan

MBE / Sputtering
11:00 - 12:30 GR4-1 11:00 - 11:15 High-Al-content AlGaN Digital Alloy with GaN Mole-fraction Up to 20% Coherently-Grown on 6H-SiC (0001) Substrates by Plasma-assisted Molecular-beam Epitaxy
*Mitsuaki Kaneko, Ryosuke Kikuchi, Hironori Okumura, Tsunenobu Kimoto, and Jun Suda Kyoto University, Japan

GR3-2 11:30 - 11:45 MOVPE growth of catalyst-free GaN wire templates for core-shell InGaN/GaN MQWs
*J. Eymery(*1), X.j. Chen(*1), D. Salomon(*1,*2), C. Bougerol(*1,*3), C. Durand(*1), G. Jacopin(*4), A. De Luna Bugallo(*4), L. Rigutti(*4), and M. Tchernycheva(*4) (*1)CEA-CNRS-UJF group Nanophysics and semiconductors, France, (*2)CEA-Leti, MINATEC campus,17 rue des Martyrs, France, (*3)Institut Neel-CNRS, Grenoble, France, and (*4)IEF UMR CNRS 8622, University Paris Sud, France

GR4-2 11:15 - 11:30 Achievement of Coherent (InN)1/(GaN)4 ShortPeriod Superlattices Grown by RF-Plasma Molecular Beam Epitaxy
*Takahiro Okuda(*1), Kazuhide Kusakabe(*2,*3,*4,*5), and Akihiko Yoshikawa(*2,*3,*4,*5,*6) (*1)Graduate School of Electrical and Electronic Engineering, Chiba University, Japan, (*2)Center for Smart Green Innovation Research, Chiba University, Japan, (*3)Venture Business Laboratory, Chiba University, Japan, (*4)G-COE, Chiba University, Japan, (*5)JST-ALCA: SMART Solar Cell Project, Chiba University, Japan, and (*6)Department of Information and Communications Engineering, Kogakuin University, Japan

GR3-3 11:45 - 12:00 Developing Periodically Oriented GaN on GaN Substrates

*Jennifer K. Hite, Mark E. Twigg, Michael A. Mastro, Jaime A. Freitas, Jr., Jerry R. Meyer, Igor Vurgaftman, Shawn Oconnor, Nicholas J. Condon, Fancis J. Kub, Steven R. Bowman, and Charles R. Eddy, Jr. U.S. Naval Research Laboratory, United States of America

GR4-3 11:30 - 11:45 Growth mode and mismatch relaxation of InN on (0001) and (000-1) ZnO: a way to lattice-matched (In,Ga)N
*Maxim Korytov(*1), Yongjin Cho(*2), Oliver Brandt(*2), Henning Riechert(*2), Toni Markurt(*1), and Martin Albrecht(*1) (*1)Leibniz Institute for Crystal Growth, Germany and (*2)Paul-Drude-Institut for Solid State Electronics, Germany

GR3-4 12:00 - 12:15 The Inuence of Prestrained Templates on Hydride Vapor Phase Epitaxy
*Martin Klein(*1), Frank Lipski(*1), Ferdinand Scholz(*1), Lisa Hiller(*2), Matthias Hocker(*2), Sebastian Bauer(*2), Benjamin Neuschl(*2), Ingo Tischer(*2), and Klaus Thonke(*2) (*1)Institute of Optoelectronics, University of Ulm, Germany and (*2)Institute of Quantum Matter / Semiconductor Group, University of Ulm, Germany

GR4-4 11:45 - 12:00 New polytypes (4H, 6H) of III-nitrides grown by hetero-step-ow mode on vicinal SiC surfaces
Yusaku Ishiyama(*1), Masaya Takaki(*1), Yoshihito Hagihara(*1), Junichi Nishinaka(*2), Mitsuru Funato(*2), Yoichi Kawakami(*2), Akihiro Hashimoto(*3), and *Satoru Tanaka(*1) (*1)Kyushu Univ., Japan, (*2)Kyoto Univ., Japan, and (*3)Univ. of Fukui, Japan

GR3-5 12:15 - 12:30 GaN lateral overgrowth by HVPE through nanometer-size channels fabricated with nanoimprint lithography
*Akira Usui(*1), Hioroki Goto(*1), Yasuharu Fujiyama(*1), Toshiharu Matsueda(*1), Haruo Sunakawa(*1), Yujiro Ishihara(*1), Akiko Okada(*2), Shuichi Shoji(*2), Atsushi A Yamaguchi(*3), Hiromi Nishihara(*4), Hidetoshi Shinohara(*4), Hiroshi Goto(*4), and Jun Mizuno(*2) (*1)Nitride Semiconductor Department, Furukawa Co.,Ltd., Japan, (*2)Institute for Nanoscience and Nanotechnology, Waseda University, Japan, (*3)Optoelectronic Device System R & D Center, Kanazawa Institute of Technology, Japan, and (*4)Nano Processing System Division, Toshiba Machine Co.,Ltd., Japan

GR4-5 12:00 - 12:15 Investigation of Indium and Impurity Incorporation of InGaN Films on Polar, Nonpolar, and Semipolar GaN Orientations Grown by Ammonia MBE
*David A. Browne, Erin C. Young, Jordan R. Lang, Christophe A. Hurni, and James S. Speck Department of Materials, University of California Santa Barbara, United States of America

GR4-6 12:15 - 12:30 Pulsed sputtering deposition of high-quality AlN on thermally-nitrided sapphire substrates
*Kohei Ueno(*1), Eiji Kishikawa(*2), Shigeru Inoue(*2), Jitsuo Ohta(*2), Hiroshi Fujioka(*2,*3), Masaharu Oshima(*1,*3), and Hiroyuki Fukuyama(*4) (*1)Department of Applied Chemistry, The University of Tokyo, Japan, (*2)Institute of Industrial Science, The University of Tokyo, Japan, (*3)JST-CREST, Japan, and (*4)Institute for Multidisciplinary Research for Advanced Materials, Tohoku University, Japan

ED5-5 12:15 - 12:30 High gure-of-merit AlGaN/GaN Schottky barrier diodes fabricated on an AlGaN/AlN buffer layer with high edge dislocation density
*Geng-Yen Lee(*1), Hsueh-Hsing Liu(*1), Pei-Ying Lin(*1), and Jen-Inn Chyi(*1,*2,*3) (*1)Department of Electrical Engineering, National Central University, Taiwan, (*2)Department of Optics and Photonics, National Central University, Taiwan, and (*3)Research Center for Applied Sciences, Academia Sinica, Taiwan

October 18 October 17

Parallel Session ED5

Joint Session J4 (GR,PR)

Novel Structure / Diode

Room : Small Hall 11:00 - 12:30 ED5-1 (invited) 11:00 - 11:30 Heterogeneous Integration of III-N Devices and Si CMOS on a Silicon Substrate
*Thomas E. Kazior, William E. Hoke, Ram Chelakara, John P. Bettencourt, and Jeffrey R Laroche Raytheon Company, United States of America

Nano I
Room : Main Hall 9:00 - 10:30 J4-1 (invited) 9:00 - 9:30 Alloy uctuations in III-Nitrides revisited by aberration corrected transmission electron microscopy
*Tobias Schulz(*1), Thilo Remmele(*1), Toni Markurt(*1), Maxim Korytov(*1), Martin Albrecht(*1), Andrew Duff(*2), Liverios Lymperakis(*2), and J rg Neugeo bauer(*2) (*1)Leibniz Institute for Crystal Growth, Germany and (*2)Max-Planck-Institut f r Eisenforschung, Germany u

ED5-2 11:30 - 11:45 Comparative Study of the DC Characteristics and the Impact of Gate-Field-Plate in III-As/InGaNbased and III-As/GaN-based Wafer-Bonded Vertical Aperture Transistors
*Shalini Lal, Jing Lu, Brian Thibeault, Stacia Keller, Steven Denbaars, and Umesh Mishra Electrical and Computer Engineering, University of California, Santa Barbara, United States of America

J4-2 9:30 - 9:45 Three-Dimensional Atom Probe and Transmission Electron Microscope Analysis of V-shaped pits and composition modulated structures in GaInN
*Yuya Kanitani(*1), Shinji Tanaka(*1), Shigetaka Tomiya(*1), Tadakatsu Ohkubo(*2), and Kazuhiro Hono(*2) (*1)Advanced Materials Laboratories, Sony Corporation, Japan and (*2)National Institute for Materials Science, Japan

ED5-3 11:45 - 12:00 GaN/AlN Double Barrier Nanowires Resonant Tunneling Diode with High Tunneling Current Density and Peak-to-Valley Current Ratio
*Ye Shao(*1), Santino D Carnevale(*2), A.T.M. Golam Sarwar(*2), Roberto C. Myers(*1,*2), and Wu Lu(*1) (*1)Department of Electrical and Computer Engineering, The Ohio State University,, United States of America and (*2)Department of Materials Science and Engineering, The Ohio State University, United States of America

J4-3 9:45 - 10:00 Applications of electron channelling contrast imaging for characterizing nitride semiconductor thin lms in a scanning electron microscope
*Naresh Kumar Gunasekar(*1), Ben Hourahine(*1), Paul R Edwards(*1), Jochen Bruckbauer(*1), Robert W Martin(*1), Christof Mauder(*2), Austin Day(*3), Aimo Winkelmann(*4), Peter Parbrook(*5), Anjus J Wilkinson(*6), and Carol Trager Cowan(*1) (*1)University of Strathclyde, United Kingdom, (*2)Aixtron, Germany, (*3)Aunt Daisy Scientic Ltd, United Kingdom, (*4)Max-Planck-Institut fur Mikrostrukturphysik, Germany, (*5)University College Cork, Ireland, and (*6)University of Oxford, United Kingdom

ED5-4 12:00 - 12:15 First observation of negative differential resistivity in a GaN/AlGaN/GaN: possible tunneling junction using polarization
*Noriyuki Watanabe(*1), Haruki Yokoyama(*1), and Naoteru Shigekawa(*2) (*1)Nippon Telegraph and Telephone Corporation, Japan and (*2)Osaka City University, Japan

J4-4 10:00 - 10:15 Formation Mechanism and Elimination of Lowangle Grain Boundaries in AlN through Control of Heterointerface with Sapphire (0001) Substrate
*Yuki Hayashi, Ryan Ganipan Banal, Kazuhisa Matsuda, Mitsuru Funato, and Yoichi Kawakami Department of Electronic Science and Engineering, Kyoto University, Japan

OD3-3 10:00 - 10:15 Combination of ITO and SiO2/AlN dielectric multilayer reective electrodes for UV light-emitting diodes
*Tsubasa Nakashima(*1), Kenichirou Takeda(*1), Yuko Matsubara(*1), Motoaki Iwaya(*1), Tetyuya Takeuchi(*1), Satoshi Kamiyama(*1), Isamu Akasaki(*1,*2), and Hiroshi Amano(*2,*3) (*1)Faculty of Science and Technology, Meijo University, Japan, (*2)Akasaki Research Center, Nagoya University, Japan, and (*3)Graduate School of Engineering, Nagoya University, Japan

J4-5 10:15 - 10:30 Fermi Level Effect on Strain in Si and Ge doped ntype GaN
*Ramon Collazo(*1), Jinqiao Xie(*2), Seiji Mita(*2), Lindsay Hussey(*1), James Lebeau(*1), Anthony Rice(*1), James Tweedie(*1), Ronny Kirste(*1), Christian Nennstiel(*3), Max Bugler(*3), Axel Hoffmann(*3), and Zlatko Sitar(*1) (*1)Department of Materials Science and Engineering, North Carolina State University, United States of America, (*2)HexaTech, Inc., United States of America, and (*3)Institut fur Festkorperphysik, Technische Universitat Berlin, Germany

OD3-4 10:15 - 10:30 Effect of heterostructure design on external quantum efciency of UV light emitting diodes
*Frank Mehnke, Joachim Stellmach, Christian Kuhn, Tim Kolbe, Mark-Antonius Rothe, Christoph Reich, Markus Pristovsek, Tim Wernicke, and Michael Kneissl Institute of solid state physics, Technical University of Berlin, Germany

October 18

October 18

Parallel Session OD3

Parallel Session ED6

UV-LED I
Room : Mid-sized Hall OD3-1 (invited) Development of AlGaN DUV-LED 9:00 - 10:30 9:00 - 9:30

InAlN-Based HEMT
Room : Small Hall ED6-1 (invited) Can GaN HEMT speed reach 1THz? 9:00 - 10:30 9:00 - 9:30

*Masamichi Ippommatsu(*1), Akira Hirano(*1), Isamu Akasaki(*2), and Hiroshi Amano(*3) (*1)UV Craftly Co., Ltd., Japan, (*2)Meijo University, Japan, and (*3)Nagoya University, Japan

OD3-2 (invited) 9:30 - 10:00 282nm AlGaN UV LEDs with 15% External Quantum Efciency
*Max Shatalov(*1), Wenhong Sun(*1), Xuhong Hu(*1), Alex Lunev(*1), Alex Dobrinsky(*1), Yuri Bilenko(*1), Jinwei Yang(*1), Michael Shur(*2), Craig Moe(*3), Gragory Garrett(*3), Michael Wraback(*3), and Remis Gaska(*1) (*1)Sensor Electronic Technology, Inc., United States of America, (*2)Rensselaer Polytechnic Institute, United States of America, and (*3)U.S. Army Research Laboratory, United States of America

*Huili Xing(*1), Edward Beam(*4), Yu Cao(*2), Tian Fang(*1), Faiza Faria(*1), Patrick Fay(*1), Satyaki Ganguly(*1), Xiang Gao(*3), Jia Guo(*1), Shiping Guo(*3), Zongyang Hu(*1), Oleg Laboutin(*2), Guowang Li(*1), Wayne Johnson(*2), Andrew Ketterson(*4), Kazuki Nomoto(*1), Paul Saunier(*4), Michael Schuette(*4), Berardi SensaleRodriguez(*1), Gregory Snider(*1), Jai Verma(*1), Ronghua Wang(*1), Yuanzheng Yue(*1), and Debdeep Jena(*1) (*1)University of Notre Dame, United States of America, (*2)Kopin Corporation, United States of America, (*3)IQE RF LLC, United States of America, and (*4)Triquint Semiconductor, Inc., United States of America

ED6-2 9:30 - 9:45 AlN-capped, AlInN/GaN HEMTs with 4.5 W/mm Output Power at 40 GHz
*Stefano Tirelli(*1), Diego Marti(*1), Lorenzo Lugani(*2), Jean-Francois Carlin(*2), Nicolas Grandjean(*2), and Colombo R. Bolognesi(*1) (*1)Millimeter-Wave Electronics Group, ETH Z rich, Swiss u and (*2)ICMP, Ecole Polytechnique F d rale de Lausanne, e e Swiss

ED6-3 9:45 - 10:00 Impact of InGaN Back-barrier on the Breakdown Voltage of InAlN/GaN HEMTs
*Daniel Piedra(*1), Hyung-Seok Lee(*1), Xiang Gao(*2), Shiping Guo(*2), and Tomas Palacios(*1) (*1)Massachusetts Institute of Technology, United States of America and (*2)IQE RF LLC, United States of America

J5-3 11:45 - 12:00 Control of the axial and lateral growth of selfinduced GaN nanowires by molecular beam epitaxy
*Sergio Fern ndez-Garrido(*1), Tobias Gotschke(*1), Ena rique Calleja(*2), Lutz Geelhaar(*1), and Oliver Brandt(*1) (*1)Paul-Drude-Institut f r u Festk rperelektronik, o Hausvogteiplatz 5-7, D-10117 Berlin, Germany and (*2)ISOM and Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Polit cnica de Madrid, e 28040 Madrid, Spain

ED6-4 10:00 - 10:15 Reverse leakage in InAlN/AlN/GaN HEMTs: Role of built-in polarization eld
*Satyaki Ganguly, Aniruddha Konar, Zongyang Hu, Huili Xing, and Debdeep Jena University of Notre Dame, United States of America

J5-4 12:00 - 12:15 Composition uctuations and luminescence localization in InGaN/GaN and AlGaN/GaN nanowires heterostructures
*Bruno Daudin(*1), Gabriel Tourbot(*1,*2), Aur lie Piere ret(*1), Philippe Gilet(*2), Luiz F Zagonel(*3,*4), Matthieu Kociak(*4), Catherine Bougerol(*5), and Bruno Gayral(*1) (*1)CEA-CNRS-UJF group Nanophysique et Semiconducteurs, INAC, CEA-Grenoble, France, (*2)CEA, LETI, MINATEC, France, (*3)Brazilian Nanotechnology National Laboratory,Brazilian Center for Research in Energy and Materials, Brazil, (*4)Laboratoire de Physique des Solides, CNRS, Orsay, France, and (*5)CEA-CNRS-UJF group Nanophysique et Semiconducteurs, Institut N el CNRS, France e

ED6-5 10:15 - 10:30 Growth and Fabrication of InAlN/GaN/InAlN/GaN Double-Channel High Electron Mobility Transistors for Electronic Applications
*Junshuai Xue, Jincheng Zhang, and Yue Hao Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, China

October 18

Joint Session J5 (GR,PR)

Nano II
Room : Main Hall 11:00 - 12:30 J5-1 (invited) 11:00 - 11:30 Growth and characterization of InGaN/GaN nanorods for vertically integrated white LEDs
*Shangjr Gwo(*1), Yu-Jung Lu(*1), Hung-Ying Chen(*1), Ming-Yen Lu(*2), and Lih-Juann Chen(*2) (*1)Department of Physics, National Tsing-Hua University, Taiwan and (*2)Department of Materials Science and Engineering, National Tsing-Hua University, Taiwan

J5-5 12:15 - 12:30 Origins of spectral diffusion in the microphotoluminescence of single InGaN quantum dots
*Benjamin PL Reid(*1), Tongtong Zhu(*2), Tim J Puchtler(*2), Luke J Fletcher(*2), Menno J Kappers(*2), Christopher CS Chan(*1), Rachel A Oliver(*2), and Robert A Taylor(*1) (*1)Deparment of Physics, University of Oxford, United Kingdom and (*2)Department of Materials Science and Metallurgy, University of Cambridge, United Kingdom

October 18

J5-2 11:30 - 11:45 Growth of semi-polar and polar GaN/AlN quantum wells in GaN nanocolumns
*Arne Urban(*1), Carla Ivana Oppo(*1), J rg Malino dretos(*1), Angela Rizzi(*1), Eleonora Secco(*2), N ria u Garro(*2), and Andr s Cantarero(*2) e (*1)IV. Physikalisches Institut, Georg-August-Universit t a G ttingen, 37077 G ttingen, Germany and (*2)Institut de o o Ci` ncia dels Materials, Universitat de Val` ncia, 46980 Pae e terna (Val` ncia), Spain e

Parallel Session OD4

UV-LED II / Physics
Room : Mid-sized Hall 11:00 - 12:30 OD4-1 (invited) 11:00 - 11:30 Improved Efciency High Power 260 nm Pseudomorphic Ultraviolet Light Emitting Diodes
*James R Grandusky(*1), Jianfeng Chen(*1), Mark C Mendrick(*1), Shawn R Gibb(*1), Craig Moe(*2), Michael Wraback(*2), and Leo J Schowalter(*1) (*1)Crystal IS, United States of America and (*2)U.S. Army Research Laboratory, United States of America

OD4-2 AlInN/GaN MQW UV-LEDs

11:30 - 11:45

*Yoshitaka Taniyasu(*1,*2), Jean-Francois Carlin(*2), An tonino Castiglia(*2), Rapha l Butt (*2), and Nicolas Grande e jean(*2) (*1)NTT Basic Research Laboratories, Japan and (*2)Ecole Polytechnique F d rale de Lausanne, Swiss e e

OD5-3 11:45 - 12:00 Concentrating properties of nitride-based solar cells using different electrodes
*Mikiko Mori(*1), Shota Yamamoto(*1), Shinichiro Kondo(*1), Tatsuro Nakao(*1), Motoaki Iwaya(*1), Tetsuya Takeuchi(*1), Satoshi Kamiyama(*1), Isamu Akasaki(*1,*3), and Hiroshi Amano(*2,*3) (*1)Faculty of Science and Technology, Meijo University, Japan, (*2)Graduate School of Engineering, Nagoya University, Japan, and (*3)Akasaki Research Center, Nagoya University, Japan

OD4-3 11:45 - 12:00 Band alignments and lateral transport properties of Nb-doped (100) rutile- and (001) anatase-TiO2 / (0001) GaN heteroepitaxial structures
*Kouji Hazu(*1), Tomomi Otomo(*1), Tokuyuki Nakayama(*2), Akikazu Tanaka(*2), and Shigefusa F Chichibu(*1) (*1)Tohoku Univ., Japan and (*2)Sumitomo Metal Mining Co. Ltd., Japan

OD5-4 12:00 - 12:15 Superluminescent light emitting diodes of 100mW output power for pico-projection
*Fabian Kopp(*1), Christoph Eichler(*1), Alfred Lell(*1), S nke Tautz(*1), Jelena Ristic(*1), Bernhard Stoo jetz(*1), Christine H (*1), Thomas Weig(*2), Ulrich o Schwarz(*2,*3), and Uwe Strauss(*1) (*1)OSRAM Opto Semiconductors GmbH, Germany, (*2)Fraunhofer Institute for Applied Solid State Physics IAF, Germany, and (*3)IMTEK, Freiburg University, Germany

OD4-4 12:00 - 12:15 Carrier injections in nitride-based light emitting diodes including two active regions with Mg-doped intermediate layers
*Kenjo Matsui(*1), Koji Yamashita(*1), Mitsuru Kaga(*1), Takatoshi Morita(*1), Tomoyuki Suzuki(*1), Tetsuya Takeuchi(*1), Satoshi Kamiyama(*1), Motoaki Iwaya(*1), and Isamu Akasaki(*1,*2) (*1)Faculty of Science and Technology, Meijo University, Japan and (*2)Department of Electrical Engineering and Computer Science, Akasaki Research Center, Nagoya University, Japan

OD5-5 12:15 - 12:30 Enhancement in hydrogen generation efciency using a GaN nanorod structure
*Jonathan David Benton, Jie Bai, and Tao Wang Department of Electronic and Electrical Engineering, University of Shefeld, United Kingdom

OD4-5 12:15 - 12:30 Anomalous characteristics of Auger process in wurtzite InGaN

*Gen-Ichi Hatakoshi and Shinya Nunoue Electron Devices Laboratory, Toshiba R&D Center, Japan

October 18

Parallel Session ED7

High Frequency Transistor

Room : Small Hall 11:00 - 12:30 ED7-1 11:00 - 11:15 High Frequency Performance of GaN HEMTs At Cryogenic Temperatures
*Dong seup Lee(*1), Allen Hsu(*1), Omair Saadat(*1), Wentao Wang(*1), Laura Popa(*1), Oleg Laboutin(*2), Yu Cao(*2), Wayne Johnson(*2), Edward Beam(*3), Andrew Ketterson(*3), Michael Schuette(*3), Paul Saunier(*3), Dana Weinstein(*1), and Tom s Palacios(*1) a (*1)Massachusetts Institute of Technology, United States of America, (*2)Kopin Corporation, United States of America, and (*3)Triquint Semiconductor Inc, United States of America

October 18

Parallel Session OD5

Energy / New Devices

Room : 204 11:00 - 12:30 OD5-1 (invited) 11:00 - 11:30 Principles and fabrications of surface plasmon coupled light-emitting diode
Yang Kuo, Horng-Shyang Chen, Dong-Ming Yeh, CheWei Huang, Yu-Lung Jung, Chih-Yen Chen, Che-Hao Liao, Yean-Woei Kiang, and *C. C. Yang Institute of Photonics and Optoelectronics, National Taiwan University, Taiwan

ED7-2 11:15 - 11:30 Quaternary Barrier T-gate InAlGaN HEMTs with fT/fmax of 230/300 GHz
*Ronghua Wang(*1), Guowang Li(*1), Golnaz Karbasian(*1), Jia Guo(*1), Bo Song(*1), Yuanzheng Yue(*1), Zongyang Hu(*1), Oleg Laboutin(*2), Yu Cao(*2), Wayne Johnson(*2), Gregory Snider(*1), Patrick Fay(*1), Debdeep Jena(*1), and Huili Grace Xing(*1) (*1)Dept. of Electrical Engineering, Univ. of Notre Dame, United States of America and (*2)Kopin Corporation, United States of America

OD5-2 11:30 - 11:45 Red Light-Emitting Diodes with Site Selective GaN:Eu Active Layer
*Hiroto Sekiguchi(*1), Tatsuki Otani(*1), Yasufumi Takagi(*2), Hiroshi Okada(*1), and Akihiro Wakahara(*1) (*1)Toyohashi University of Technology, Japan and (*2)Hamamatsu Photonics K. K., Japan

ED7-3 11:30 - 11:45 Microwave characteristics of 0.3 m-gate AlGaN/GaN HEMTs on 8-inch Si (111)
*Subramaniam Arulkumaran(*1), Geok Ing Ng(*2), Sahnmuganathan Vicknesh(*1), Wang Hong(*2), Kian Siong Ang(*1), J p y Tan(*3), V k x Lin(*3), S Dolmanan(*3), Shane Todd(*4), G -Q Lo(*4), and Sudhiranjan Tripathy(*3) (*1)Temasek Laboratories, Nanyang Technological University, Singapore, (*2)NOVITAS, School of EEE, Nanyang Technological University, Singapore, (*3)Institute of Materials Research and Engineering, Singapore, and (*4)Institute of Microelectronics, Singapore

TP1-2 14:15 - 14:30 (202 1) Semipolar InGaN/GaN Solar Cells Grown by Ammonia Molecular Beam Epitaxy
*David Alan Browne, Jordan R Lang, and James S Speck Department of Materials, University of California Santa Barbara, United States of America

TP1-3 14:30 - 14:45 Hole transport improvement in InGaN/GaN multiple quantum well solar cell using step variation indium composition active layer
*Yu-Lin Tsai(*1), Lung-Hsing Hsu(*2), Ching-Hsueh Chiu(*1), Chien-Chung Lin(*2), Peichen Yu(*1), and HaoChung Kuo(*1) (*1)Department of Photonics and Institute of ElectroOptical Engineering, National Chiao Tung University, Hsinchu, Taiwan, Taiwan and (*2)Institute of Photonic System, National Chiao Tung University, Tainan, Taiwan, Taiwan

ED7-4 11:45 - 12:00 Study on 50nm Gate Length of Ga2O3/GaN Nanowire Field Effect Transistor
*Chi-Kang Li, Jeng-Wei Yu, Lung-Han Peng, and Yuh-Renn Wu Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taiwan

ED7-5 12:00 - 12:15 Ballistic Transport in GaN-based HEMTs

*Elison Matioli(*1), Omair Saadat(*1), Hongwei Li(*2), Debdeep Jena(*3), and Tomas Palacios(*1) (*1)Massachusetts Institute of Technology, United States of America, (*2)Veeco Instruments, United States of America, and (*3)University of Notre Dame, United States of America

TP1-4 14:45 - 15:00 Direct growth of InxGa1-xN with the entire range of indium content on (0001) sapphire by metalorganic vapor phase epitaxy
*Duc V. Dinh, Sergej Solopow, Christian Friedrich, Sabine Alam , Markus Pristovsek, and Michael Kneissl e Technical University of Berlin, Institute of Solid State Physics, Germany

ED7-6 12:15 - 12:30 Interface Roughness Scattering at AlGaN/GaN Heterojunctions

*Ryosuke Niwa(*1), Yoshihiro Akiyama(*1), Hiroaki Murayama(*1), Hiroki Sakashita(*1), Takuya Kawazu(*2), Tetsu Kachi(*3), Masahiro Sugimoto(*4), and Hiroyuki Sakaki(*1,*2) (*1)Toyota Technological Institute, Japan, (*2)National Institute for Materials Science, Japan, (*3)Toyota Central R&D Labs., Inc., Japan, and (*4)Toyota Motor Corporation, Japan

October 18

Topical Session TP2

Nano Devices
Room : Mid-sized Hall 14:00 - 15:00 TP2-1 14:00 - 14:15 Green-Photonics LEDs with novel III-Nitride quantum dots for red emission
*C. B. Soh(*1), K. K. Ansah-Antwi(*1,*2), J. N. Tan(*1), and S. J. Chua(*1,*2) (*1)Institute of Materials Research and Engineering, Singapore and (*2)Department of Electrical and Computer Engineering, National University of Singapore, Singapore

October 18

Topical Session TP1

Solar Cells and In-rich InGaN

Room : Conference Hall 14:00 - 15:00 TP1-1 14:00 - 14:15 III-V-N Materials for Super High Efciency Multijunction Solar Cells
Masafumi Yamaguchi, Boussairi Bouzazi, Hidetoshi Suzuki, Nobuaki Kojima, and *Yoshio Ohshita Toyota Technological Institute, Japan

TP2-2 14:15 - 14:30 Ultra-Violet GaN/Al0.5Ga0.5N Quantum Dot Based Light Emitting Diodes
*Julien Brault(*1), Benjamin Damilano(*1), Abdelkarim Kahouli(*1,*2), S bastien Chenot(*1), Mathieu Leroux(*1), e and Jean Massies(*1) (*1)Centre de Recherche sur l Hetero-Epitaxie et ses Applications, CRHEA-CNRS, France and (*2)Universite de Nice Sophia Antipolis, France

TP2-3 14:30 - 14:45 Growth and characterization of ordered InGaN/GaN nanocolumnar structures on GaN/sapphire and Si (111) substrates
*Steven Albert(*1), Ana Maria Bengoechea-Encabo(*1), Miguel Angel Sanchez-Garcia(*1), Enrique Calleja(*1), Achim Trampert(*2), and Uwe Jahn(*2) (*1)ISOM, Universidad Politecnica de Madrid, Spain and (*2)Paul-Drude-Institut, Germany

SLN-3 14:40 - 15:00 Ultrascaled InAlN/GaN HEMTs with f T of 400 GHz

Yuanzheng Yue(*1), Zongyang Hu(*1), Jia Guo(*1), Berardi Sensale-Rodriguez(*1), Guowang Li(*1), *Ronghua Wang(*1), Faiza Faria(*1), Bo Song(*1), Xiang Gao(*2), Shiping Guo(*2), Thomas Kosel(*1), Gregory Snider(*1), Patrick Fay(*1), Debdeep Jena(*1), and Huili Xing(*1) (*1)Department of Electrical Engineering, University of Notre Dame, United States of America and (*2)IQE RF LLC, United States of America

TP2-4 14:45 - 15:00 Probing light emission from a single GaN nanorod containing multiple InGaN/GaN quantum wells
*Jochen Bruckbauer(*1), Paul R. Edwards(*1), Jie Bai(*2), Tao Wang(*2), and Robert W. Martin(*1) (*1)Department of Physics, University of Strathclyde, United Kingdom and (*2)Department of Electronic and Electrical Engineering, University of Shefeld, United Kingdom

October 18

Session LN

Late News
Room : Small Hall 14:00 - 15:00 LN-1 14:00 - 14:10 Reduction of reverse bias leakage using polarization induced barriers in III-N Isotype Heterojunctions for use in III-N Hot Electron Transistors
*Geetak Gupta, Jing Lu, Stacia Keller, and Umesh Mishra University of California Santa Barbara, United States of America

October 18

Session S-LN

Selected Late News

Room : Main Hall 14:00 - 15:00 SLN-1 14:00 - 14:20 High-power and long-lifetime green laser diodes on semipolar {202 1} GaN substrates operating at wavelengths beyond 525 nm
*Yohei Enya(*1), Shimpei Takagi(*1), Takashi Kyono(*1), Masahiro Adachi(*1), Yusuke Yoshizumi(*1), Takamichi Sumitomo(*1), Yuichiro Yamanaka(*1), Tetsuya Kumano(*1), Shinji Tokuyama(*1), Kazuhide Sumiyoshi(*1), Nobuhiro Saga(*1), Masaki Ueno(*1), Koji Katayama(*1), Takatoshi Ikegami(*1), Takao Nakamura(*1), Katsunori Yanashima(*2), Hiroshi Nakajima(*2), Kunihiko Tasai(*2), Kaori Naganuma(*2), Noriyuki Fuutagawa(*2), Yoshiro Takiguchi(*2), Tatsushi Hamaguchi(*2), and Masao Ikeda(*2) (*1)Semiconductor Technologies R & D Laboratories, Sumitomo Electric Industries, Ltd., Japan and (*2)Advanced Materials Laboratories, Sony Corporation, Japan

LN-2 14:10 - 14:20 Room Temperature Lasing in InGaN/GaN microdisk cavities with embedded InGaN quantum dots
*Alexander Woolf(*1), Igor Aharonovich(*1), Kasey J Russell(*1), Tongtong Zhu(*2), Haitham AR El-Ella(*2), Menno J. Kappers(*2), Rachel A. Oliver(*2), and Evelyn L. Hu(*1) (*1)School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts, 02138, USA, United States of America and (*2)Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, United Kingdom, United Kingdom

LN-3 14:20 - 14:30 A passively mode-locked GaInN laser diode generating 200-fs optical pulses
*Shunsuke Kono, Hideki Watanabe, Rintaro Koda, Takao Miyajima, and Masaru Kuramoto Advanced Materials Laboratories, Sony Corporation, Japan

SLN-2 14:20 - 14:40 Demonstration of nonpolar GaN-based verticalcavity surface-emitting lasers

*Casey Holder(*1), Daniel Feezell(*2), James S. Speck(*1), Steven P. Denbaars(*1,*3), and Shuji Nakamura(*1,*3) (*1)Materials Department, University of California, Santa Barbara, United States of America, (*2)Electrical and Computer Engineering Department, University of New Mexico, United States of America, and (*3)Electrical and Computer Engineering Department, University of California, Santa Barbara, United States of America

LN-4 14:30 - 14:40 Low voltage InGaN red LEDs by SQW on GaN (202 1)
*Yoshinobu Kawaguchi(*1,*2), Chia-Yen Huang(*1), Steven P. Denbaars(*1), and Shuji Nakamura(*1) (*1)Department of Materials, University of California, Santa Barbara, United States of America and (*2)Advanced Technology Research Laboratories, Sharp Corporation, Japan

LN-5 14:40 - 14:50 Investigation on thermal droop of semipolar (202 1 ) single quantum well Light-emitting diodes by varying the well thickness and emission wavelength
*Chih-Chien Pan, Tao Gilbert, James S. Speck, Shuji Nakamura, and Steven P. Denbaars Materials Department, University of California, Santa Barbara, United States of America

J6-4 16:00 - 16:15 Capacity voltage characteristics and electron holography on cubic AlGaN/GaN heterojunctions
*Donat J. As(*1), Alexander Zado(*1), Qiyuan Y. Wei(*2), T. Li(*2), J. Y. Huang(*2), and Fernando A. Ponce(*2) (*1)Department Physik, University of Paderborn, Germany and (*2)Department of Physics, Arizona State University, United States of America

LN-6 14:50 - 15:00 Stable and High-Efciency Deep Ultraviolet LED Lamps with Micro-pixel Geometry
Bin Zhang(*1), Iftikhar Ahmad(*1), Antwon Coleman(*2), Rex Chen(*2), Joe Dion(*1), Mohamad Lachab(*2), Qhalid Fareed(*1), Craig Moe(*3), Mike Wraback(*3), *Vinod Adivarahan(*1), and Asif Khan(*2) (*1)Nitek, Inc, United States of America, (*2)University of South Carolina, United States of America, and (*3)Army Research Adelphi, Maryland, United States of America

J6-5 16:15 - 16:30 GaN-based visible light-emitting diodes on chemical vapor deposited graphene lms
*Kunook Chung, Suk in Park, Hyeonjun Baek, and GyuChul Yi* Department of Physics & Astronomy, Seoul National University, Republic of Korea

October 18

Parallel Session GR5

October 18

MOCVD / HVPE II
Room : Conference Hall 15:00 - 16:30 GR5-1 (invited) 15:00 - 15:30 AlInN-based structures lattice-matched to GaN for photonics and electronics
*Rapha l Butt e e Ecole Polytechnique F d rale de Lausanne, Swiss e e

Joint Session J6 (OD,ED)

Optoelectronic Devices
Room : Main Hall 15:00 - 16:30 J6-1 (invited) 15:00 - 15:30 III-nitride tunnel junctions: device engineering and applications
S. Krishnamoorthy(*1), F. Akyol(*1), J. Yang(*2), P. S. Park(*1), R. C. Myers(*1,*2), and *S. Rajan(*1,*2) (*1)Electrical & Computer Engineering, The Ohio State University, United States of America and (*2)Material Science & Engineering, The Ohio State University, United States of America

GR5-2 15:30 - 15:45 Ultra Thin Channel N-polar (InAlN, AlGaN)/GaN HEMTs Grown by Metal Organic Chemical Vapor Deposition
*Jing Lu, Dan Denninghoff, Stacia Keller, Steven P. Denbaars, and Umesh K. Mishra Electrical and Computer Engineering Department, University of California, Santa Barbara, United States of America

J6-2 15:30 - 15:45 GaInN-based tunnel junctions in n-p-n light emitting diodes
*Mitsuru Kaga(*1), Takatoshi Morita(*1), Yuka Kuwano(*1), Kouji Yamashita(*1), Kouta Yagi(*1), Motoaki Iwaya(*1), Tetsuya Takeuchi(*1), Satoshi Kamiyama(*1), and Isamu Akasaki(*1,*2) (*1)Fac. Sci. & Eng., Meijo University, Japan and (*2)Akasaki Research Center, Nagoya University, Japan

GR5-3 15:45 - 16:00 1.6kV Breakdown Voltage with Extremely Low Leakage Current GaN HFETs Fabricated with 6um-thick Semi-insulating GaN on 6-inch Si
*S. M. Cho, E. J. Hwang, J. M. Kim, J. H. Kim, J. H. Shin, Y. S. Eum, J. Park, Y. J. Jo, W S Kim, H. J. Lee, Kwang Choong Kim, and T. Jang LG Electronics, Republic of Korea

J6-3 15:45 - 16:00 Nitride-based Light-emitting Transistors with Compositionally Graded Base
*Kazuhide Kumakura, Hideki Yamamoto, and Toshiki Makimoto NTT Basic Research Laboratories, NTT Corporation, Japan

GR5-4 16:00 - 16:15 Defect reduction in semi-polar (11-22) gallium nitride using epitaxial lateral overgrowth
*Tongtong Zhu(*1), Danny Sutherland(*2), Tom J. Badcock(*2), Rui Hao(*1), Michelle A. Moram(*1), Philip Dawson(*2), Menno J. Kappers(*1), and Rachel A. Oliver(*1) (*1)Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, United Kingdom and (*2)School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester, M13 9PL, United Kingdom

GR5-5 16:15 - 16:30 InGaN growth on GaN/Sapphire by high pressure MOVPE

*Yoshio Honda, Seiya Sakakura, Tomohiro Doi, Tomoyuki Tanikawa, Masahito Yamaguchi, and Hiroshi Amano Nagoya Univ. Elec. Eng., Japan

October 18

Parallel Session PR5

Device Physics
Room : Mid-sized Hall 15:00 - 16:30 PR5-1 (invited) 15:00 - 15:30 Violet second harmonic generation from polarityinverted GaN waveguides
*Ryuji Katayama(*1,*2), Shusai Kurokawa(*1), Yujiro Fukuhara(*3), Masahiro Kakuda(*3), Shigeyuki Kuboya(*3), Kentaro Onabe(*3), Tomoyuki Tanikawa(*1), Takashi Hanada(*1), and Takashi Matsuoka(*1) (*1)Institute for Materials Research, Tohoku University, Japan, (*2)PRESTO, Japan Science and Technology Agency, Japan, and (*3)Department of Advanced Materials Science, The University of Tokyo, Japan

October 18

Parallel Session GR6

InN / High In Content InGaN

Room : 204 15:00 - 16:30 GR6-1 (invited) 15:00 - 15:30 Elucidation of the electrical properties of indium nitride
*Tatiana A. Komissarova(*1), Xinqiang Wang(*2), Akihiko Yoshikawa(*3), and Sergey V. Ivanov(*1) (*1)Ioffe Institute, Russia, (*2)Peking University, China, and (*3)Chiba University, Japan

PR5-2 15:30 - 15:45 Temperature dependent study of lateral charge carrier diffusion in a turquoise InGaN multi quantum well structure
*Hans-Michael Solowan(*1,*2), Julia Danhof(*1,*2), and Ulrich t. Schwarz(*1,*2) (*1)Fraunhofer Institute for Applied Solid State Physics IAF, Freiburg, Germany and (*2)Institute of Microsystem Technology IMTEK, Albert-Ludwigs-University of Freiburg, Germany

GR6-2 (invited) 15:30 - 16:00 Growth of high-electron mobility InN and demonstration of p-type doping
*Xinqiang Wang(*1), Shitao Liu(*1), Nan Ma(*1), Bo Shen(*1), and Akihiko Yoshikawa(*2) (*1)State Key Laboratory of Articail Microstructure and Mesoscopic Physics, School of Physics, Peking University, China and (*2)Center for SMART Green Innovation Research, Chiba University, Japan

GR6-3 16:00 - 16:15 STEM and XRD investigations of ultra-thin GaInN/GaN quantum wells with high indium content
*Lars Hoffmann(*1), Heiko Bremers(*1), Holger J nen(*1), o Uwe Rossow(*1), Thorsten Mehrtens(*2), Marco Schowalter(*2), Andreas Rosenauer(*2), and Andreas Hangleiter(*1) (*1)Institute of Applied Physics, TU Braunschweig, Germany and (*2)Institute of Solid State Physics, Universtit t a Bremen, Germany

PR5-3 15:45 - 16:00 Impact of diffusivity to carrier recombination rate in nitride semiconductors: from bulk GaN to (In,Ga)N quantum wells
*Ramunas Aleksiejunas, Patrik Scajev, Saulius Nargelas, Tadas Malinauskas, Arunas Kadys, and Kestutis Jarasiunas Institute of Applied Research, Vilnius University, Lithuania

PR5-4 16:00 - 16:15 Reverse-bias induced absorption enhancement mechanism in GaInN/GaN waveguide of bisectional laser diode
*Takao Miyajima, Shunsuke Kono, Hideki Watanabe, Rintaro Koda, Masaru Kuramoto, and Masao Ikeda Advanced Materials Laboratories, Sony Corporation, Japan

GR6-4 16:15 - 16:30 Hall and Seebeck measurement of UID and Mg doped InN: Determining bulk InN hole transport properties by dual layer analysis
*Soojeong Choi, Oliver Bierwagen, and James S. Speck Materials Department, University of California, Santa Barbara, United States of America

PR5-5 16:15 - 16:30 Interfacial Polarization Enhanced Thermoelectrics in III-Nitride Materials

*Alexander Sztein, John E Bowers, Steven P Denbaars, and Shuji Nakamura Department of Materials Science and Engineering, University of California, Santa Barbara, United States of America

October 18

Parallel Session GR7

GR7-6 18:45 - 19:00 Homogeneous (Ga,Mn)N epitaxial lms with Mn concentrations up to 10% showing high magnetization
*Gerd Kunert(*1), Sylwia Dobkowska(*2), Tian Li(*3), Johannes von Borany(*4), Carsten Kruse(*1), Stefan Figge(*1), Rafal Jakiela(*2), Alberta Bonanni(*3), J rg o Grenzer(*4), Wiktor Stefanowicz(*2), Maciej Sawicki(*2), Tomas Dietl(*2,*5), and Detlef Hommel(*1) (*1)Institute of Solid State Physics, University of Bremen, Germany, (*2)Institute of Physics, Polish Academy of Science, Poland, (*3)Institute of Solid State Physics, Johannes Kepler University Linz, Austria, (*4)Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Germany, and (*5)Institute of Theoretical Physics, University of Warsaw, Poland

New Growth Technology

Room : Conference Hall 17:00 - 19:00 GR7-1 (invited) 17:00 - 17:30 GaN light-emitting diodes on glass substrates with enhanced electroluminescence
*Jun hee Choi(*1), Yun sung Lee(*1), Taek Kim(*2), Sungwoo Hwang(*1), and Kinam Kim(*3) (*1)Frontier Research Lab., Samsung Advanced Institute of Technology, Republic of Korea, (*2)Photo-Electronic Device Group., Samsung Advanced Institute of Technology, Republic of Korea, and (*3)Samsung Advanced Institute of Technology, Republic of Korea

October 18

GR7-2 Single crystal GaN on SiO2/Si(100)

17:30 - 17:45

Parallel Session OD6

*Benjamin Leung(*1), Jie Song(*1), Yu Zhang(*1), MiaoChan Tsai(*2), and Jung Han(*1) (*1)Department of Electrical Engineering, Yale University, United States of America and (*2)Institute of Photonics, National Changhua University of Education, Taiwan

LDs
Room : 107/108 17:00 - 19:00 OD6-1 (invited) 17:00 - 17:30 Laser operation of nitride laser diodes with GaN well layer in 340 nm band
*Masakazu Kuwabara, Yoji Yamashita, and Harumasa Yoshida Hamamatsu Photonics K.K., Japan

GR7-3 (invited) 17:45 - 18:15 Layered boron nitride as a release layer for mechanical transfer of GaN-based devices
*Yasuyuki Kobayashi, Kazuhide Kumakura, Tetsuya Akasaka, Hideki Yamamoto, and Toshiki Makimoto NTT Basic Research Laboratories, Japan

GR7-4 18:15 - 18:30 A comparative study of hydrogen implantation induced blistering and exfoliation in GaN and AlN
U. Dadwal and *R. Singh Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi, India

OD6-2 17:30 - 17:45 Semipolar (202 1 ) Blue to Aquamarine Laser Diodes with Minimal Wavelength Blueshift
*Chia-Yen Huang(*1), Matthew T Hardy(*1), Yuji Zhao(*2), Qimin Yan(*1), Arash Pourhashemi(*1), Daniel A Feezell(*1), James S Speck(*1), Steven P Denbaars(*1,*2), and Shuji Nakamura(*1,*2) (*1)Department of Materials, University of California, Santa Barbara, United States of America and (*2)Department of Electrical and Computer Engineering, University of California, Santa Barbara, United States of America

GR7-5 18:30 - 18:45 Scandium-based nitrides: new members of the IIInitride family
*Michelle A Moram(*1), Stephan M Knoll(*2), Harvey E Beere(*2), Spark Zhang(*2), Menno J Kappers(*2), Colin J Humphreys(*2), and David A Ritchie(*2) (*1)Imperial College London, United Kingdom and (*2)University of Cambridge, United Kingdom

OD6-3 17:45 - 18:00 Observation of Quasi-Whispering Gallery Mode Resonance in Deformed Hexagonal GaN Microdisks
*Tetsuya Kouno(*1), Masaru Sakai(*2), Katsumi Kishino(*3), and Kazuhiko Hara(*1) (*1)Shizuoka University, Japan, (*2)University of Yamanashi, Japan, and (*3)Sophia University, Japan

OD6-4 18:00 - 18:15 High quality factor InGaN/GaN microdisk cavities with embedded InGaN quantum dots
*Alexander Woolf(*1), Igor Aharonovich(*1), Kasey J Russell(*1), Nan Niu(*1), Christine Zgrabik(*1), Tongtong Zhu(*2), Haitham A. R. El-Ella(*2), Menno J Kappers(*2), Rachel A Oliver(*2), and Evelyn L Hu(*1) (*1)School of Engineering and Applied Sciences, Harvard University, United States of America and (*2)Department of Materials Science and Metallurgy, University of Cambridge, United Kingdom

PR6-2 17:30 - 17:45 Impacts of point defects on the photoluminescence lifetime of Si-doped Al0.6Ga0.4N epilayers grown on an AlN template
*Shigefusa F Chichibu(*1), Kouji Hazu(*1), Youichi Ishikawa(*1), Masanori Tashiro(*1), Hideto Miyake(*2), Kazumasa Hiramatsu(*2), and Akira Uedono(*3) (*1)IMRAM, Tohoku University, Japan, (*2)EEE Dept., Mie University, Japan, and (*3)Div. Appl. Phys., University of Tsukuba, Japan

OD6-5 18:15 - 18:30 In-Well Pumped Blue GaN-Based VerticalExternal-Cavity Surface-Emitting Lasers
*Thomas Wunderer(*1), John E Northrup(*1), Zhihong Yang(*1), Mark Teepe(*1), Noble M Johnson(*1), Paul Rotella(*2), and Michael Wraback(*2) (*1)Palo Alto Research Center, United States of America and (*2)U.S. Army Research Laboratory, United States of America

PR6-3 17:45 - 18:00 Shallow donor and DX behaviors of Si in Si-doped AlxGa1-xN (x>0.7)
*Nguyen Tien Son, Xuan thang Trinh, Paulius Malinovskis, Ivan G Ivanov, Daniel Nilsson, Urban Forsberg, Anelia Kakanakova-Georgieva, and Erik Janz n e Department of Physics, Chemistry and Biology, Link ping o University, Sweden

OD6-6 18:30 - 18:45 InGaN laser diode arrays for high power application
*Piotr Perlin(*1,*2), Przemek Wisniewski(*1,*2), Irina Makarova(*2), Steve Najda(*2), Lucja Marona(*1), Grzegorz Targowski(*2), Robert Czernecki(*1,*2), Michal Bockowski(*1,*2), Mike Leszczynski(*1,*2), and Robert Kucharski(*3) (*1)Institute of High Pressure Physics, Poland, (*2)TopGaN Ltd., Poland, and (*3)Ammono SA., Poland

PR6-4 18:00 - 18:15 Localized donor states in the light emission from InGaN
Grzegorz Staszczak(*1), *Tadeusz Suski(*1), Wladyslaw Walukiewicz(*2), Piotr Perlin(*1), Robert Czernecki(*1), and Agata Kaminska(*3) (*1)Institute of High Pressure Physics UNIPRESS, Poland, (*2)Materials Science Division LBNL, United States of America, and (*3)Institute of Physics, PAS, Poland

PR6-5 18:15 - 18:30 Luminescence of acceptors in Mg-doped GaN

*Bo Anders Monemar(*1), Sergey Khromov(*1), Galia Pozina(*1), Peder Bergman(*1), Carl Hemmingsson(*1), Lars Hultman(*1), Hiroshi Amano(*2), Isamu Akasaki(*3), V. Avrutin(*4), Xing Li(*4), Hadis Morkoc(*4), and Plamen P. Paskov(*1) (*1)Department of Physics, Chemistry and Biology, Linkoping University, Sweden, (*2)Department of Electrical Engineering and Computer Science, Nagoya University, Japan, (*3)Reseach Center for Nitride Semiconductors, Meijo University, Nagoya, Japan, and (*4)Department of Electrical Engineering and Physics Department, Virginia Commonwealth University, Richmond, Virginia 23284, United States of America

OD6-7 18:45 - 19:00 Mechanisms for picosecond pulse generation in GaN-based multi-section laser diodes
*Katarzyna Anna Holc(*1), Thomas Weig(*1), Wilfried Pletschen(*1), Klaus K hler(*1), Joachim Wagner(*1), and o Ulrich Theodor Schwarz(*1,*2) (*1)Fraunhofer Institute for Applied Solid State Physics IAF, Germany and (*2)IMTEK, Freiburg University, Germany

October 18

Parallel Session PR6

Defects
Room : Mid-sized Hall 17:00 - 19:00 PR6-1 (invited) 17:00 - 17:30 Positron annihilation spectroscopy on nitride-based semiconductors
*Akira Uedono(*1), Shoji Ishibashi(*2), Nagayasu Ohima(*3), and Ryoichi Suzuki(*3) (*1)Faculty of Pure and Applied Science, University of Tsukuba, Japan, (*2)Nanosystem Research Institute, AIST, Japan, and (*3)Research Institute of Instrumentation Frontier, AIST, Japan

PR6-6 (invited) 18:30 - 19:00 Shallow versus deep nature of Mg acceptors in nitride semiconductors
*John L. Lyons, Anderson Janotti, and Chris G. van de Walle Materials Department, University of California, Santa Barbara, United States of America

October 18

Parallel Session PR7

PR7-6 18:30 - 18:45 Semipolar (202 1 ) InGaN Light-Emitting Diodes and Laser Diodes
*Yuji Zhao(*1), Chia-Yen Huang(*2), Chih-Chien Pan(*2), Shinichi Tanaka(*2), Yoshinobu Kawaguchi(*2), Kenji Fujito(*3), Daniel Feezell(*2), James S. Speck(*2), Steven P. Denbaars(*1,*2), and Shuji Nakamura(*1,*2) (*1)ECE, University of California, Santa Barbara, United States of America, (*2)Materials, University of California, Santa Barbara, United States of America, and (*3)Optoelectronic Laboratory, Mitsubishi Chemical Corporation, Japan

Optical Properties
Room : 204 17:00 - 19:00 PR7-1 (invited) 17:00 - 17:30 Orbital-angular-momentum spectral dynamics of GaN excitons excited by optical vortices
*Kyohhei Shigematsu(*1), Yasunori Toda(*1,*2), Keisaku Yamane(*1,*2), and Ryuji Morita(*1,*2) (*1)Department of Applied Physics, Hokkaido University, Japan and (*2)JST, CREST, Japan

PR7-7 18:45 - 19:00 Internal quantum efciency in AlGaN epilayers and heterostructures
*Gintautas Tamulaitis(*1), Juras Mickevicius(*1), Michael S. Shur(*2), Jinwei Yang(*3), Max Shatalov(*3), and Remis Gaska(*3) (*1)Department of Semiconductor Physics and IAR, Vilnius University, Lithuania, (*2)Department of ECE and CIE, Rensselaer Polytechnic Institute, United States of America, and (*3)Sensor Electronic Technology, Inc., United States of America

PR7-2 17:30 - 17:45 Impact of biexcitons on the formation of polariton condensates in III-nitride based multiple quantum well microcavities
*Pierre Corfdir(*1,*2), Jacques Levrat(*1), Georg Rossbach(*1), Rapha l Butt (*1), Eric Feltin(*1), Jean-Francois e e Carlin(*1), Gabriel Christmann(*1), Pierre Lefebvre(*3), Jean-Daniel Gani` re(*1), Nicolas Grandjean(*1), and e Beno t Deveaud(*1) n (*1)Institute of Condensed Matter Physics, Ecole Polytechnique F d rale de Lausanne, Swiss, (*2)Cavendish Labe e oratory, University of Cambridge, United Kingdom, and (*3)CNRS, Laboratoire Charles Coulomb, Universit Monte pellier 2, France

October 18

Parallel Session ED8

Characterization
Room : Small Hall 17:00 - 19:00 ED8-1 (invited) 17:00 - 17:30 Trapping and High Electric Field Parasitic and Degradation phenomena in AlGaN/GaN power HEMTs
*Gaudenzio Meneghesso, Matteo Meneghini, and Enrico Zanoni UNIVERSITY OF PADOVA - Department of Information Engineering, Italy

PR7-3 17:45 - 18:00 Longitudinal-transverse splitting of GaN nanowire surface phonon modes
*Ana Cros(*1), J. Wang(*2), Francois Demangeot(*2,*4), R. P chou(*2,*4), and Bruno Daudin(*3) e (*1)Institute of Materials Science, Universidad de Valencia, Spain, (*2)CNRS-CEMES, France, (*3)CEA-CNRS Group, France, and (*4)Universit de Toulouse, France e

PR7-4 18:00 - 18:15 Observation of Rabi oscillations from a site controlled GaN quantum dot
*Mark J Holmes(*1), Satoshi Kako(*1,*2), Pawel P Podemski(*1), Kihyun Choi(*1), Munetaka Arita(*1), and Yasuhiko Arakawa(*1,*2) (*1)NanoQuine, The University of Tokyo, Japan and (*2)Institute of Industrial Science, The University of Tokyo, Japan

ED8-2 17:30 - 17:45 Pre-breakdown current uctuations and RTS noise in reverse-bias-stressed AlGaN/GaN HEMTs
Paul Marko(*1), Alexander Alexewicz(*1), Matteo Meneghini(*2), Gaudenzio Meneghesso(*2), Enrico Zanoni(*2), Oliver Hilt(*3), Joachim Wuer(*3), Gottfried Strasser(*1), and *Dionyz Pogany(*1) (*1)Inst. Solid State Electronics, TU Vienna, Austria, (*2)Dept. Information Engineering, University of Padova, Italy, and (*3)FBH Berlin, Germany

PR7-5 18:15 - 18:30 Giant exciton-phonon coupling in single wurtzite GaN quantum dots
*Gordon Callsen(*1), Andrei Schliwa(*1), Markus Richard Wagner(*1), Satoshi Kako(*2), Gerald H nig(*1), Juri o Brunnmeier(*1), Johannes Settke(*1), Christian Kindel(*1), Erik Stock(*1), Yasuhiko Arakawa(*2), and Axel Hoffmann(*1) (*1)Technical University of Berlin, Germany and (*2)University of Tokyo, Japan

ED8-3 17:45 - 18:00 3-Dimensional Sub-micron Thermal and Electroluminesence mapping of GaN HEMTs using Silicon Carbide Solid Immersion Lenses
*James W Pomeroy and Martin Kuball H.H. Wills Physics Laboratory, University of Bristol, United Kingdom

ED8-4 18:00 - 18:15 Schottky-Diode-Based In-situ Temperature Sensors for AlGaN/GaN HEMTs
*Omair I. Saadat(*1), Kevin R. Bagnall(*1), Tatsuya Fujishima(*1), Daniel Piedra(*1), John R. Lachapelle(*2), Evelyn N. Wang(*1), and Tomas Palacios(*1) (*1)Massachusetts Institute of Technology, United States of America and (*2)C.S. Draper Laboratory, United States of America

ThP-GR-2 Thick and Crack-free AlN Films by NH3 Nitridation of Sapphire Substrate
*Ryan Ganipan Banal, Yosuke Akashi, Kazuhisa Matsuda, Yuki Hayashi, Mitsuru Funato, and Yoichi Kawakami Department of Electronic Science and Engineering, Kyoto University, Japan

ED8-5 18:15 - 18:30 Electro-thermal Modeling of Heat Generation in AlGaN/GaN HEMTs

*Kevin R. Bagnall(*1), Omair I. Saadat(*2), Tatsuya Fujishima(*2), Youngsuk Nam(*1,*3), Tomas Palacios(*2), and Evelyn N. Wang(*1) (*1)Department of Mechanical Engineering, Massachusetts Institute of Technology, United States of America, (*2)Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, United States of America, and (*3)Department of Mechanical Engineering, Kyung Hee University, Republic of Korea

ThP-GR-3 Growth and characterization of lateral polar junctions for frequency doubling
Marc P Hoffmann, *Ronny Kirste, Lindsay Hussey, Joseph Rajan, Andy Xie, Zachary Bryan, Ramon Collazo, and Zlatko Sitar NCSU, Department of Material Science and Engineering, United States of America

ThP-GR-4 Study on electron transport properties of AlGaNchannel heterostructure

*Fanna Meng, Jincheng Zhang, Hao Zhou, Zhiyu Lin, and Yue Hao Key Laboratory of Wide Band Gap Semiconductor Materials and Devices,School of Microelectronics, Xidian University, China

ED8-6 18:30 - 18:45 Transition of High Electric Field of AlGaN/GaN HEMTs on Si Observed by Photo Emission
*Akio Wakejima, Amalraj Frank Wilson, Takuya Joka, and Takashi Egawa Nagoya Institute of Technology, Japan

ThP-GR-5 Efcient Si doping of conductive high Al-content AlxGa1-xN layers

*Daniel Nilsson, Xuan Thang Trinh, Urban Forsberg, Nguyen Tien Son, Erik Janz n, and Anelia Kakanakovae Georgieva Department of Physics, Chemistry and Biology, LinkOping University, Sweden

ED8-7 18:45 - 19:00 Evidence for breakdown luminescence in AlGaN/GaN HEMTs

*Gaudenzio Meneghesso(*1), Matteo Meneghini(*1), Alberto Zanandrea(*1), Fabiana Rampazzo(*1), Antonio Stocco(*1), Marco Bertin(*1), Dionyz Pogany(*2), and Enrico Zanoni(*1) (*1)1 University of Padova,, Italy and (*2)2 TU Wien, Austria, Austria

ThP-GR-6 Narrow-band AlGaN UV detectors with various cut-off wavelength

*Bj rn Albrecht, Susanne Kopta, Richard Gutt, Lutz Kirste, o Rachid Driad, Klaus K hler, Martin Walther, and Oliver Amo bacher Fraunhofer-Institut f r Angewandte Festk rperphysik, Geru o many

October 18

Session ThP

Poster Presentation 3
Room : Main Hall 19:15 - 21:00 ThP-GR-1 p-AlGaN free AlGaN MQW target for EB-pumped deep-UV light sources
*Fumitsugu Fukuyo(*1,*2), Shunsuke Ochiai(*1), Hideto Miyake(*1), Kazumasa Hiramatsu(*1), Harumasa Yoshida(*2), and Yuji Kobayashi(*2) (*1)Department of Electrical and Electronic Engineering, Mie University, Japan and (*2)Hamamatsu Photonics K.K., Japan

ThP-GR-7 Aluminium gallium buffer layers for Ultraviolet Light Emitting Diodes incorporating sacricial gallium nitride layers for ip chip processing
*Thomas C Sadler, Haoning Li, Zhiheng Quan, Michele A Conroy, Vitaly Zubialevich, Justin D Holmes, and Peter J Parbrook Tyndall National Institute, University College Cork, Ireland

ThP-GR-8 Flip Chip Ultraviolet Light Emitting Diodes Utilising Polarisation Matched InAlN/AlGaN MQWs
Thomas C Sadler(*1), Elaine Taylor(*2), Zhiheng Quan(*1), Miguel Caro(*1), Haoning Li(*1), Michele A Conroy(*1), Vitaly Zubialevich(*1), Robert W Martin(*2), and *Peter J Parbrook(*1) (*1)Tyndall National Institute, University College Cork, Ireland and (*2)Department of Physics, University of Strathclyde, United Kingdom

ThP-GR-14 Characterization of AlN initial growth on SiC seed crystal by sublimation growth method
*Masashi Hatada(*1), Hiroyuki Kamata(*1), Kunihiro Naoe(*1), Tomonori Miura(*2), and Tomohisa Kato(*2) (*1)Fujikura Ltd., Japan and (*2)National Institute of Advanced Industrial Science and Technology, Advanced Power Electronics Research Center (ADPERC), Japan

ThP-GR-9 Abruptness improvement of the interfaces of AlGaN/GaN superlattice by cancelling asymmetric diffusion
*Duanjun Cai(*1,*2), Xiaohong Chen(*1), Na Lin(*1), Fuchun Xu(*1), and Hangyang Chen(*1,*2) (*1)Department of Physics, Xiamen University, China and (*2)Semiconductor Photonics Research Center, Xiamen University, China

ThP-GR-15 Thermal model and experimental validation of the temperature distribution by in-situ temperature measurements under ammonothermal conditions
*Juergen Erlekampf(*1), Elke Meissner(*1,*2), Jan Seebeck(*2), Nicolas Alt(*3), Jochen Friedrich(*2), Eberhard Schluecker(*3), and Lothar Frey(*1,*2) (*1)Chair of Electron Devices, Friedrich-AlexanderUniversity of Erlangen-Nuremberg, Germany, (*2)Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Germany, and (*3)Chair of Process Technology and Systems Engineering, Friedrich-Alexander-University Erlangen-Nuremberg, Germany

ThP-GR-10 Dislocation-free bulk GaN single crystals grown by Na-ux method

*Kousuke Murakami, Daisuke Matuo, Hiroki Imabayashi, Hideo Takazawa, Yuuma Todoroki, Akira Kitamoto, Mihoko Maruyama, Mamoru Imade, Masashi Yoshimura, and Yuusuke Mori Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Japan

ThP-GR-16 TEM analysis of bulk AlN grown by solid source solution growth method
*Yoshihiro Kangawa(*1,*2), Noriyuki Kuwano(*3), Boris M Epelbaum(*4), and Koichi Kakimoto(*1) (*1)RIAM, Kyushu Univ., Japan, (*2)PRESTO JST, Japan, (*3)KASTEC, Kyushu Univ., Japan, and (*4)Univ. Erlangen, Germany

ThP-GR-11 Structural Analysis of Carbon-Added Na-Ga Melts in Na-ux GaN Growth by First-Principles Calculation
*Takahiro Kawamura(*1,*2), Yuji Yamada(*2), Hiroki Imabayashi(*2), Mihoko Maruyama(*2), Mamoru Imade(*2), Masashi Yoshimura(*2), Yusuke Mori(*2), and Yoshitada Morikawa(*2) (*1)Graduate School of Engineering, Mie University, Japan and (*2)Graduate School of Engineering, Osaka University, Japan

ThP-GR-17 Self-Separation of Sublimation-Grown AlN with AlSiN Buffer Layer

*Katsushi Nishino(*1), Jun Nakauchi(*1), Kotaro Hayashi(*1), and Masashi Tsukihara(*2) (*1)The University of Tokushima, Japan and (*2)Ushio Inc., Japan

ThP-GR-18 Properties of bulk GaN crystals grown by Super Critical Acidic Ammonia Technology
*Yuji Kagamitani, Hideo Fujisawa, and Toshinari Fujimori Mitsubishi Chemical Corporation, Japan

ThP-GR-12 The coalescence growth of GaN crystals on m-GaN substrates using Ba-added Na ux method
*Tatsuya Someno, Masayuki Imanishi, Hiroki Imabayashi, Kosuke Murakami, Hideo Takazawa, Yuma Todoroki, Daisuke Matsuo, Mihoko Maruyama, Mamoru Imade, Masashi Yoshimura, and Yusuke Mori Department of Electrical, Electronic and Information Engineering, Osaka University, Japan

ThP-GR-19 The effect of surface treatment of the seed substrate on the Na-ux growth of GaN crystals
*Masatomo Honjo, Taku Fujimori, Hideo Takazawa, Yuma Todoroki, Hiroki Imabayashi, Daisuke Matsuo, Kosuke Murakami, Mihoko Maruyama, Mamoru Imade, Masashi Yoshimura, and Yusuke Mori Osaka University, Japan

ThP-GR-13 High quality prismatic GaN single crystal grown by Ba-added Na ux method
*Hiroki Imabayashi, Kosuke Murakami, Daisuke Matsuo, Yuma Todoroki, Hideo Takazawa, Akira Kitamoto, Mihoko Maruyama, Mamoru Imade, Masashi Yoshimura, and Yusuke Mori Graduate school of Engineering, Osaka University, Japan

ThP-GR-20 Numerical simulation of heat and uid ow in ammonothermal GaN bulk crystal growth process
*Yoshio Masuda(*1), Akira Suzuki(*1), Tohru Ishiguro(*2), and Chiaki Yokoyama(*2) (*1)AIST, Japan and (*2)IMRAM, Tohoku University, Japan

ThP-GR-21 Studies on defect reduction in AlGaN heterostructures

Ferdinand Scholz(*1), *Kamran Forghani(*1), Martin Klein(*1), Mohammadreza Gharavipour(*1), Oliver Klein(*2), Ute Kaiser(*2), Benjamin Neuschl(*3), Ingo Tischer(*3), Matthias Hocker(*3), Martin Feneberg(*3), Klaus Thonke(*3), Sergey Lazarev(*4), Sondes Bauer(*4), Tilo Baumbach(*4), Richard Gutt(*5), and Thorsten Passow(*5) (*1)Institute of Optoelectronics, Ulm University, Germany, (*2)Central Facility of Electron Microscopy, Ulm University, Germany, (*3)Institute of Quantum Matter, Ulm University, Germany, (*4)Karlsruhe Institute of Technology, Germany, and (*5)Fraunhofer Institute for Applied Solid State Physics, Germany

ThP-GR-26 Improvement in performance of 380nm ultra violet light emitting diodes employing nano-scale SiO2 patterned n-type GaN substrate
*Hyo Won Seo(*1), Min Sung Jo(*1), Wael Z. Tawk(*1), Seung Bea Yang(*1), Jung Ju Lee(*1), Ju Hui Song(*1), Seo Jung Bae(*1), Young Boo Moon(*2), and June Key Lee(*1) (*1)Department of Materials Science and Engineering, Chonnam National University, Republic of Korea and (*2)THE LEDs co. Ltd, Republic of Korea

ThP-GR-27 Microstructure analysis of AlGaN on AlN underlying layers with different threading dislocation densities
*Kimiyasu Ide(*1), Yuko Matsubara(*1), Motoaki Iwaya(*1), Tetsuya Takeuchi(*1), Satoshi Kamiyama(*1), Isamu Akasaki(*1,*3), and Hiroshi Amano(*2,*3) (*1)Faculty of Science and Technology, Meijo University, Japan, (*2)Graduate School of Engineering, Nagiya University, Japan, and (*3)Akasaki Research Center, Nagoya University, Japan

ThP-GR-22 Nature of V-defects in GaN

*Vladislav V Voronenkov(*1), Natalia I Bochkareva(*2), Ruslan I Gorbunov(*2), Philipp E Latyshev(*3), Yuri S Lelikov(*2), Alexander I Tsyuk(*2), Andrey S Zubrilov(*2), and Yuri G Shreter(*2) (*1)St.-Petersburg State Polytechnical University, Russia, (*2)Ioffe Physical Technical Institute, Russia, and (*3)Fock Institute of Physics St. Petersburg State University, Russia

ThP-GR-23 Facet Evolution and Indium Incorporation in MOVPE-Grown Lattice-Matched InAlN/GaN Heterostructures
*Suman-Lata Sahonta(*1), Thomas C Sadler(*2), Menno J Kappers(*1), Colin J Humphreys(*1), and Rachel A Oliver(*1) (*1)Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, United Kingdom and (*2)Photonics Research Centre, Tyndall National Institute, Cork, Ireland

ThP-GR-28 Power Enhancement of GaN-Based Blue LightEmitting Diodes by SiO2 Nanorod-Array Patterned Sapphire Substrate
*Po-Min Tu(*1,*2), Ching-Hsueh Chiu(*1,*2), Shih-Pang Chang(*2,*3), Chien-Chung Lin(*2), Zhen-Yu Li(*2), Chung-Ying Jang(*2), Hung-Chih Yang(*2), Hsiao-Wen Zan(*2), Hao-Chung Kuo(*2), Tien-Chang Lu(*2), ShingChung Wang(*2), Chun-Yen Chang(*2), Ya-Wen Lin(*1), Shih-Cheng Huang(*1), and Chih-Peng Hsu(*1) (*1)Advanced Optoelectronic Technology Inc., Taiwan, (*2)Department of Photonics Engineering, Electronics Engineering, and Institute of Photonic System, National Chiao Tung University, Taiwan, and (*3)R&D Division, Epistar Co., Ltd., Taiwan

ThP-GR-24 TEM analyses of GaN grown on (111)Si substrate via an AlInN intermediate layer
Shogo Kawakita(*1), Hiroyuki Iwata(*1), Taihei Nakagita(*1), Shogo Ito(*1), *Nobuhiko Sawaki(*1), Masashi Irie(*2), Yoshio Honda(*2), Masahito Yamaguchi(*2), and Hiroshi Amano(*2) (*1)Department of Electrical Engg. and Electronics, Aichi Institute of Technology, Japan and (*2)Department of Electronics & Akasaki Research Center, Nagoya University, Japan

ThP-GR-29 MOVPE growth of embedded GaN nanocolumn

*Shinya Umeda(*1), Takahiro Kato(*1), Tsukasa Kitano(*2), Toshiyuki Kondo(*2), Hiroyuki Matsubara(*1), Satoshi Kamiyama(*1), Tetsuya Takeuchi(*1), Motoaki Iwaya(*1), and Isamu Akasaki(*1) (*1)Department of materials Science and Engineering, Meijo university, Japan and (*2)El-seed Inc., Japan

ThP-GR-25 Polarity Determination of AlN Epilayers by Convergent Beam Electron Diffraction Method Based on Transmission Electron Microscopy
*Masataka Imura(*1), Kiyomi Nakajima(*1), Yasuo Koide(*1), Hiroshi Amano(*2), and Kenji Tsuda(*3) (*1)NIMS, Japan, (*2)Nagoya University, Japan, and (*3)Tohoku University, Japan

ThP-GR-30 The control of crystal polarity for MOCVD nanowire growth

*Christophe Durand(*1), Xiaojun Chen(*1), Catherine Bougerol(*2), Guillaume Perillat-Merceroz(*3), Diane Sam-Giao(*1), Bruno Gayral(*1), Benoit Amstatt(*3), Brigitte Martin(*3), Roseline Templier(*3), Pierre Ferret(*3), and Joel Eymery(*1) (*1)Nanophysique et semiconducteurs, INAC, CEAGrenoble, France, (*2)Nanophysique et semiconducteurs, Institut N el, France, and (*3)CEA-Leti, MINATEC, France e

ThP-GR-31 Nucleation and density control of uniform and narrow GaN nanorods by molecular beam epitaxy
*Yen-Ting Chen(*1,*2), Tsutomu Araki(*3), Justinas Palisaitis(*2), Per O. A. Persson(*2), Li-Chyong Chen(*4), Kuei-Hsien Chen(*1,*4), Per Olof Holtz(*2), Jens Birch(*2), and Yasushi Nanishi(*3,*5) (*1)Institute of Atomic and Molecular Sciences, Academia Sinica, Taiwan, (*2)Department of Physics, Chemistry and Biology (IFM), Link ping University, Sweden, (*3)Rito sumeikan University, Japan, (*4)Center for Condensed Matter Sciences, National Taiwan University, Taiwan, and (*5)Seoul National University, Republic of Korea

ThP-GR-35 GaN nanowires grown on a graphite substrate by RF-MBE

*Shinta Nakagawa, Takuya Tabata, Yoshio Honda, Masahito Yamaguchi, and Hiroshi Amano Department of Electrical Engineering & Computer Science, Nagoya University, Japan

ThP-GR-36 Growth and optical characterization of multilayers of InGaN quantum dots

*Tongtong Zhu(*1), Haitham A.R. El-Ella(*1), Benjamin Reid(*2), Mark J. Holmes(*2), Robert A. Taylor(*2), Menno J. Kappers(*1), and Rachel A. Oliver(*1) (*1)Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, United Kingdom and (*2)Department of Physics, University of Oxford, Parks Road, Oxford, OX1 3PU, United Kingdom

ThP-GR-32 Inuence of substrate orientation on the morphology and optical properties of selective area growth GaN nanocolumns and InGaN quantum disks
*Ana Mara Bengoechea-Encabo(*1), Steven Albert(*1), Francesca Barbagini(*1), Miguel Angel S ncheza Garca(*1), Enrique Calleja(*1), Uwe Jahn(*2), Achim Trampert(*2), Gilles Nataf(*3), Philippe de Mierry(*3), and Jes s Zu iga-P rez(*3) u n e (*1)ISOM and Dpt. of Electronic Engineering, Technical University of Madrid, Spain, (*2)Paul-Drude-Institut f r u Festk perelektronik, Germany, and (*3)CRHEA-CNRS, o France

ThP-GR-37 Effective Top-down Chemical Control Method for Highly Efcient InGaN Photonic Nanostructures
*Je-Hyung Kim(*1), Young-Ho Ko(*1), Su-Hyun Gong(*1), Suk-Min Ko(*1), Chung-Seok Oh(*3), Ki-Yon Park(*3), Myoungho Jeong(*2), Jeong yong Lee(*2), and Yong-Hoon Cho(*1) (*1)Department of Physics, KAIST, Republic of Korea, (*2)Department of Materials Science and Engineering, KAIST, Republic of Korea, and (*3)SYSNEX Co. Ltd., Republic of Korea

ThP-GR-33 Growth Mechanisms of Catalyst-free and Maskfree Heteroepitaxial GaN Nano- and Micro-rods Grown on Si (111) and Si (100) Substrates by Metal-Organic Vapor Phase Epitaxy
*Suk-Min Ko(*1), Je-Hyung Kim(*2), Young-Ho Ko(*3), Yun hee Chang(*4), Yong-Hyun Kim(*5), Jong moon Yoon(*6), Jeong yong Lee(*6), and Yong-Hoon Cho(*7) (*1)Department of Physics and Graduate School of Nanoscience & Technology (WCU), KAIST, Republic of Korea, (*2)Department of Physics and Graduate School of Nanoscience & Technology (WCU), KAIST, Republic of Korea, (*3)Department of Physics and Graduate School of Nanoscience & Technology (WCU), KAIST, Republic of Korea, (*4)Graduate School of Nanoscience and Technology (WCU), KAIST, Republic of Korea, (*5)Graduate School of Nanoscience and Technology (WCU), KAIST, Republic of Korea, (*6)Department of Materials Science and Engineering, KAIST, Republic of Korea, and (*7)Department of Physics and Graduate School of Nanoscience & Technology (WCU), KAIST, Republic of Korea

ThP-GR-38 High quality factor photonic crystal cavities for GaN quantum dots
*Fabrice Semond(*1), Sylvain Sergent(*1), Mohammad Junaebur Rashid(*1), Jean-Yves Duboz(*1), Diane SamGiao(*2), Bruno Gayral(*2), Delphine N el(*3), Sylvain e David(*3), Xavier Ch coury(*3), Philippe Boucaud(*3), e Meletios Mexis(*4), Christelle Brimont(*4), and Thierry Guillet(*4) (*1)CRHEA-CNRS, France, (*2)CEA-CNRS, INAC-SP2M, France, (*3)IEF-CNRS-Universit Paris Sud, France, and e (*4)L2C-CNRS-Universit Montpellier 2, France e

ThP-GR-39 Germanium doping of self assembled GaN nanowires grown by plasma assisted molecular beam epitaxy
*J rg Sch rmann(*1), Pascal Hille(*1), Pascal Becker(*1), o o Jan M ssener(*1), Matthias Kleine-Boymann(*2), Markus u Sch fer(*1), Marcus Rohnke(*2), Jordi Arbiol(*3), J rg a o Teubert(*1), and Martin Eickhoff(*1) (*1)I. Physikalisches Institut, Justus-Liebig- Universit t a Giessen, Germany, (*2)Physikalisch-Chemisches Institut, Justus-Liebig-Universit t Giessen, Germany, and a (*3)ICREA and Institut de Ciencia de Materials de Barcelona, Spain

ThP-GR-34 Stacking faults and luminescence property of InGaN nanowires

*Takuya Tabata(*1), Jihyun Paek(*1), Yoshio Honda(*1), Masahito Yamaguchi(*1), and Hiroshi Amano(*1,*2) (*1)Department of Electrical Engineering & Computer Science, Nagoya University, Japan and (*2)Akasaki Research Center, Nagoya University, Japan

ThP-GR-40 Selected Area Growth of GaN Columns by GasSource Molecular Beam Epitaxy
*Jeungwoo Lee(*1), Sungkuk Choi(*1), Wy Il Yun(*1), Kwang Suk Son(*2), Min Yang(*1), and Jiho Chang(*1) (*1)Department of applied sciences, Korea Maritime University, Republic of Korea and (*2)MSE, Dong-A University, Republic of Korea

ThP-GR-47 Plasma-assisted MBE growth and characterizations of Mn-delta doped III-nitride nanorods
*Yuan-Ting Lin(*1), Ting-Hong Chen(*1), Paritosh Wadekar(*1), Quark Chen(*1), Huichun Huang(*2), NewJin Ho(*2), and Li-Wei Tu(*1) (*1)Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Taiwan and (*2)Department of Materials and Optoelectronic Science and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Taiwan

ThP-GR-41 Investigations of Semipolar InGaN Multiple Quantum Wells in Nanopyramid Arrays

*Tzeng-Tsong Wu(*1), Ya-Yu Yang(*2), Chaio-Yun Chang(*1), Tien-Chang Lu(*1), Wei-Chih Lai(*2), HaoChung Kuo(*1), and Shing-Chung Wang(*1) (*1)Department of Photonic & Institute of Electro-Optical Engineering, National Chiao Tung University, Taiwan and (*2)Department of Photonic, National Cheng Kung University, Taiwan

ThP-GR-49 High quality AlN layer homoepitaxially grown on nitrided a-plane sapphire using Ga-Al ux
*Masayoshi Adachi(*1), Masashi Sugiyama(*2), Akikazu Tanaka(*2), and Hiroyuki Fukuyama(*1) (*1)Tohoku University, Japan and (*2)Sumitomo Metal Mining Co. Ltd., Japan

ThP-GR-42 Improvement of optical and morphological properties of needle-like GaN nanorods by Si-doping
*Mohamed Ebaid Abd Rabou(*1), Jin Ho Kang(*1), June Key Lee(*2), and Sang Wan Ryu(*1) (*1)Department of Physics, Chonnam National University, Republic of Korea and (*2)Department of Materials Science and Engineering, Chonnam National University, Republic of Korea

ThP-GR-50 Inuence of oxygen partial pressure on the growth of aluminum nitride layer using Ga-Al ux
*Mari Takasugi(*1), Masayoshi Adachi(*1), Masashi Sugiyama(*2), Akikazu Tanaka(*2), and Hiroyuki Fukuyama(*1) (*1)Tohoku University, Japan and (*2)Sumitomo Metal Mining Co. Ltd., Japan

ThP-GR-43 Inuence of the GaN capping layer on the optical properties of InN/GaN quantum dots
*Wen-Cheng Ke, Wei-Chung Houng, and Chih-An Wei Department of Mechanical Engineering, Yuan Ze University, Taiwan

ThP-GR-51 Micro-analyses of Room-temperature Ferromagnetism in GaN:Mn with Surface Nano-scale Structures

*Xianzhe Jiang, Yuhao Zhang, Fafa Zhang, Zhiyuan Lin, Guijun Lian, Tongjun Yu, Cunda Wang, and Guoyi Zhang School of Physics, Peking University, China

ThP-GR-44 Luminescence properties of Eu-doped GaN grown by ow-rate modulation epitaxy

*Takanori Matsuno, Dong-Gun Lee, Ryuta Wakamatsu, Atsushi Koizumi, Yoshikazu Terai, and Yasufumi Fujiwara Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Japan

ThP-GR-52 Local atomic structure in epitaxial GaMnN layers grown by MBE

*Edyta Piskorska-Hommel(*1), Gerd Kunert(*1), Anna Wolska(*2), Aleksandra Drzewiecka(*2), Marcin T. Klepka(*1,*2), Jens Falta(*1), and Detlef Hommel(*1) (*1)Institute of Solid State Physics, University of Bremen, Germany and (*2)Insitute of Physics, Polish Academy of Sciences, Poland

ThP-GR-45 Epitaxial growth of rhomboedral Boron Nitride by CVD

Mikhail Chubarov, Henrik Pedersen, Hans H gberg, and o *Anne Henry Department of Physics, Chemistry and Biology, Link ping o University, Sweden

ThP-GR-53 ZnO thick lm growth on GaN substrate using photo-assisted electrochemical deposition
*Kazuyuki Uno, Yasuhiro Tauchi, and Ichiro Tanaka Faculty of Systems Engineering, Wakayama University, Japan

ThP-GR-46 Interface study of high-k dielectric on GaN using atom probe tomography
*B. Mazumder(*1), D. Denninghoff(*2), B. Mcskimming(*1), U. K. Mishra(*2), and J. S. Speck(*1) (*1)Materials Department, University of California, Santa Barbara, United States of America and (*2)Electrical and Computer Engineering, University of California, Santa Barbara, United States of America

ThP-GR-54 Controllable hydrothermal growth of ZnO nanorods/nanosheets on Ga-face GaN epilayer with a two-step etching
*Rong-Ming Ko(*1), Ming-Yueh Chuang(*2), Chih-Hung Hsiao(*1,*2), and Shui-Jinn Wang(*1,*2) (*1)Advanced Optoelectronic Technology Center, National Cheng Kung University, Taiwan and (*2)Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Taiwan

ThP-GR-60 GaN on oxidized (100) Si and (111) Si

*Theeradetch Detchprohm(*1,*2), Wenting Hou(*1,*2), Claire Marviney(*1,*2), Shi You(*1,*2), Adam Bross(*2,*3), Xiaoli Wang(*1,*2), Liang Zhao(*1,*2), and Christian Wetzel(*1,*2) (*1)Dep. of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, United States of America, (*2)Furture Chips Constellation, Rensselaer Polytechnic Institute, United States of America, and (*3)Dep. of Materials Science and Engineering, Rensselaer Polytechnic Institute, United States of America

ThP-GR-55 Stress Analysis of GaN lms grown on Sapphire Substrates

*Shinya Okano, Tadashige Sato, Takenari Goto, and Takafumi Yao Center for Interdisciplinary Research, Tohoku University, Japan

ThP-GR-61 InGaN/GaN and GaN/AlGaN quantum wells grown on CVD graphene

*Priti Gupta, Azizur Rahman, Nirupam Hatui, Maheshwar Gokhale, K. G. Padmalekha, Mandar Deshmukh, and Arnab Bhattacharya Department Of Condensed Matter Physics, Tata Institute of Fundamental Research, Mumbai, India

ThP-GR-56 Growth and Characterization of Dilute Magnetic Semiconductor GaGdN Nanorods Grown on Si
Mai Uenaka, *Shigehiko Hasegawa, Mariko Kimura, and Hajime Asahi The Institute of Scientic and Industrial Research, Osaka University, Japan

ThP-GR-62 Reusable sapphire substrate prepared by chemical lift-off process using Ga2O3 interlayer
*Sin-Liang Ou(*1), Dong-Sing Wuu(*1,*2), Ming-Tsung Hung(*1), Hsu-Hung Hsueh(*3), and Ray-Hua Horng(*3) (*1)Department of Materials Science and Engineering, National Chung Hsing University, Taiwan, (*2)Department of Materials Science and Engineering, Da-Yeh University, Taiwan, and (*3)Graduate Institute of Precision Engineering, National Chung Hsing University, Taiwan

ThP-GR-57 Comprehensive study of polarity ip mechanism at thermally-oxidized AlN layers

*Eiji Kishikawa(*1), Kohei Ueno(*2), Shigeru Inoue(*1), Jitsuo Ohta(*1), Masaharu Oshima(*2,*3), and Hiroshi Fujioka(*1,*3) (*1)Institute of Industrial Science, The University of Tokyo, Japan, (*2)Department of Applied Chemistry, The University of Tokyo, Japan, and (*3)Core Research for Evolutional Science and Technology, Japan Science and Technology Agency, Japan

ThP-GR-63 The effect of silicon during the growth of high quality r-BN by CVD
*Mikhail Chubarov, Henrik Pedersen, Hans H gberg, and o Anne Henry Department of Physics, Chemistry and Biology, Link ping o University, Sweden

ThP-GR-58 Polarity inversion of AlN layer deposited on Al thin interlayer using RF reactive sputtering
*Tomoyuki Kumada, Makoto Ohtsuka, and Hiroyuki Fukuyama Institute Multidisciplinary Reseach for Advanced Materials, Tohoku University, Japan

ThP-GR-64 Ferromagnetism in rare-earth nitrides: effect of nitrogen vacancies

*Franck Natali(*1), Binh Do Le(*1), Stephane Vezian(*2), Benjamin Damilano(*2), Harry Warring(*1), Yvon Cordier(*2), Fabrice Semond(*2), Joe Trodahl(*1), and Ben Ruck(*1) (*1)MacDiarmid Institute for Advanced Materials and Nanotechnology, New Zealand and (*2)CRHEA-CNRS, France

ThP-GR-59 Solution growth of AlN single crystal on sapphire

*Hiroaki Matsubara(*1), Kohei Mizuno(*1), Yukihisa Takeuchi(*1), Yoshikazu Takeda(*1), Yuichi Aoki(*2), Kimio Kohara(*2), and Toru Ujihara(*1) (*1)Graduate School of Engineering, Nagoya University, Japan and (*2)DENSO CORPORATION, Japan

ThP-GR-65 Highly efcient synthesis of AlN whiskers with high aspect ratio
*Hiroaki Matsubara(*1), Kohei Mizuno(*1), Yukihisa Takeuchi(*1), Yoshikazu Takeda(*1), Yuichi Aoki(*2), Kimio Kohara(*2), and Toru Ujihara(*1) (*1)Graduate School of Engineering, Nagoya University, Japan and (*2)DENSO CORPORATION, Japan

ThP-GR-66 Structural properties of GaPN on (001) Silicon substrates by metal organic vapor phase epitaxy
*Nagarajan Subramaniyam, Henri Jussila, Sami Suihkonen, Markku Sopanen, and Harri Lipsanen Department of Micro and Nanosciences, Aalto University, Finland

ThP-OD-5 The Enhancement of Green LED Power through the Temperature Optimization of InGaN Well Growth
*Jongbae Kim(*1), Sungbum Bae(*1), Sung-Bock Kim(*1), Youngboo Moon(*2), Seong min Moon(*2), Il-Gyun Choi(*3), Hyunsung Kim(*3), and Jong-In Shim(*3) (*1)ETRI, Republic of Korea, (*2)Theleds Co., Ltd., Republic of Korea, and (*3)Hanyang University, Republic of Korea

ThP-GR-67 Cluster Size Effects in InxGa1-xN alloys

*Fathi Y. Elturi and Ben Hourahine Department of Physics, SUPA University of Strathclyde, United Kingdom

ThP-OD-6 Inuence of Barrier Growth Temperature on Carrier Localization and Internal Quantum Efciency of GaN/InGaN based light-emitting diodes
*Yuchen Xing, Lai Wang, Zhibiao Hao, and Yi Luo Department of Electronic Engineering, Tsinghua University, China

ThP-GR-68 The isotropic and anisotropic elastic stresses inuence on (Ga,In,Al)-N structural parameters and energy - band spectra
*Valentin N. Brudnyi(*1) and Alexey V. Kosobutsky(*2) (*1)Tomsk State University, Russia and (*2)Kemerovo State University, Russia

ThP-OD-7 Enhanced optical output power of GaN-based lightemitting diodes by magnetic eld
*Jae-Joon Kim(*1), Young-Chul Leem(*2), Jang-Won Kang(*2), and Seong-Ju Park(*1,*2) (*1)Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Republic of Korea and (*2)School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Republic of Korea

ThP-OD-1 The mechanism of current limitation in InGaN/GaN light-emitting diodes

*Ilya Anatolyevich Prudaev, Oleg Petrovich Tolbanov, Vadim Aleksandrovich Novikov, and Ivan Varfolomeyevich Ivonin Department of Semiconductor Devices, Tomsk State University, Russia

ThP-OD-2 High-Power, Low-Efciency-Droop Semipolar (202 1) Single-Quantum-Well Blue Light-Emitting Diodes

*Chih-Chien Pan(*1), Shinichi Tanaka(*1), Feng Wu(*1), Yuji Zhao(*2), James S. Speck(*1), Shuji Nakamura(*1), Steven P. Denbaars(*1,*2), and Daniel Feezell(*1) (*1)Department of Materials Science, University of California- Santa Barbara, United States of America and (*2)Department of Electrical and Computer Engineering, University of California- Santa Barbara, United States of America

ThP-OD-8 Improved efciency droop in GaN-based lightemitting diodes with trapezoidal quantum barriers
*Sang-Jo Kim(*1), Sang-Jun Lee(*2), Kwang jae Lee(*2), and Seong-Ju Park(*1,*2) (*1)Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Republic of Korea and (*2)School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Republic of Korea

ThP-OD-9 Nitride laser diodes degradation study - what new brings cathodoluminescence imaging from reliability point of view
*Lucja Marona(*1), Przemek Wisniewski(*1), Piotr Perlin(*1), Tadek Suski(*1), Robert Czernecki(*2), Jakub Goss(*1,*3), Krzysztof Korona(*3,*4), Mariusz Pluska(*4), and Andrzej Czerwinski(*1,*4) (*1)Institute of High Pressure Physics PAS, Poland, (*2)TopGaN Ltd., Poland, (*3)Faculty of Physics, University of Warsaw, Poland, and (*4)Institute of Electron Technology, Poland

ThP-OD-3 Engergy-band parameters at the -Ga2O3 wurtzite GaN interface

Wei Wei, *Zhixin Qin, and Guoyi Zhang Peking University

ThP-OD-4 Polarization doping for III-nitride optoelectronics

*Sergey Yu. Karpov, Oleg V. Khokhlev, and Kirill A. Bulashevich STR Group Soft-Impact, Ltd, Russia

ThP-OD-10 Lateral hydrogen diffusion at p-GaN layers in nitride-based LEDs with tunnel junctions
*Yuka Kuwano(*1), Mitsuru Kaga(*1), Takatoshi Morita(*1), Tetsuya Takeuchi(*1), Motoaki Iwaya(*1), Satoshi Kamiyama(*1), and Isamu Akasaki(*2) (*1)Faculty of Science and Technology ,Meijo University, Japan and (*2)Akasaki Research Center, Nagoya University, Japan

ThP-OD-11 Accelerating radiative recombination by reducing Auger losses: a numerical study

*Miao-Chan Tsai(*1,*2), Benjamin Leung(*2), Jung Han(*2), and Yen-Kuang Kuo(*3) (*1)Institute of Photonics, National Changhua University of Education, Taiwan, (*2)Department of Electrical Engineering, Yale University, United States of America, and (*3)Department of Physics, National Changhua University of Education, Taiwan

ThP-OD-16 Failure Mode Study of High Brightness GaN Light Emitting Diode Chips under Extreme High DC Current
*Man-Fang Huang(*1), Tzung-Te Chen(*2), Xie-Ji Wen(*1), Yun-Yo Lo(*1), and Chu-An Tsai(*1) (*1)Institute of Photonics, National Changhua University of Education, Changhua500, Taiwan, Taiwan and (*2)Electronics Optoelectronics Research Laboratory, Industrial Technology Research Institute, Hsinchu 310, Taiwan, Taiwan

ThP-OD-12 Improvement of blue InGaN/GaN light-emitting diodes by inserting a hydrogen-treated GaN layer and an in situ grown SiNx layer
*Yang Chung Chieh(*1), Lin Chia Feng(*2), Lin Chun Min(*3), and Chen Kuei Ting(*4) (*1)Department of Materials Science and Engineering,National Chung Hsing University,250 Kuo Kuang Road, Taichung, 402, Taiwan, (*2)Department of Materials Science and Engineering,National Chung Hsing University,250 Kuo Kuang Road, Taichung, 402, Taiwan, (*3)Department of Materials Science and Engineering,National Chung Hsing University,250 Kuo Kuang Road, Taichung, 402, Taiwan, and (*4)Department of Materials Science and Engineering,National Chung Hsing University,250 Kuo Kuang Road, Taichung, 402, Taiwan

ThP-OD-17 Temperature dependence of the efciency droop in GaInN light-emitting diodes

*Jaehee Cho(*1), David S. Meyaard(*1), Sang-Heon Han(*2), Min-Ho Kim(*2), Cheolsoo Sone(*2), and E. fred Schubert(*1) (*1)Rensselaer Polytechnic Institute, United States of America and (*2)Samsung Electronics, Republic of Korea

ThP-OD-18 High Rate Plasma Etching of GaN on Sapphire Substrate

*Yiping Song, Matthew James Loveday, Piotr Piekarniak, Jo o Ferreira, and Mike Cooke a Oxford Instruments Plasma Technology, United Kingdom

ThP-OD-13 Electrical, spectral and thermal analysis of yellow luminescent dots in InGaN green LEDs
*Nicola Trivellin(*1), Matteo Meneghini(*1), Simone Vaccari(*1), Berthold Hahn(*2), Christian Leirer(*2), Gaudenzio Meneghesso(*1), and Enrico Zanoni(*1) (*1)Dept. of Information Engineering, University of Padova, Italy and (*2)Osram Optosemiconductors, Germany

ThP-OD-19 Photoelectrochemical liftoff of patterned sapphire substrate for fabricating vertical light-emitting diode
*Chieh Hsieh, Horng-Shyang Chen, Chun-Han Lin, ChihYen Chen, Che-Hao Liao, Shao-Ying Ting, Yu-Feng Yao, Hao-Tsung Chen, Yean-Woei Kiang, and C. C. Yang Institute of Photonics and Optoelectronics, National Taiwan University, Taiwan

ThP-OD-14 Mg diffusion and dislocation modications during high-temperature annealing of InGaN-based LEDs
Matteo Meneghini(*1), *Nicola Trivellin(*1), Marina Berti(*1), Andrea Gasparotto(*1), Tiziana Cesca(*1), Anna Vinattieri(*2), Franco Bogani(*2), Dandan Zhu(*3), Colin j Humphreys(*3), Gaudenzio Meneghesso(*1), and Enrico Zanoni(*1) (*1)University of Padova, Italy, (*2)Universita di Firenze, Italy, and (*3)University of Cambridge, United Kingdom

ThP-OD-20 Damage - free ITO Deposition on LED devices

*Silvia Schwyn(*1), Hanspeter Friedli(*1), Marco Padrun(*1), Antonino Castiglia(*2), Gatien Cosendey(*2), and Nicolas Grandjean(*1) (*1)Evatec AG, 8890 Flums, Swiss and (*2)LASPE, ICMP, Ecole Polytechnique F d rale de Lausanne (EPFL), 1015 e e Lausanne, Swiss

ThP-OD-15 Non-polar p-type Contact Properties of a-plane GaN

K. C. Jeong(*1,*2), T. Jeong(*2), *J.-S. Ha(*1), J. K. Lee(*1), H. K. Yeo(*3), Y. B. Moon(*3), T. S. Oh(*4), J. Jeon(*5), and S. Jung(*5) (*1)Chonnam National University, Republic of Korea, (*2)Korea Photonics Technology Institutes, Republic of Korea, (*3)THELEDS Co., Republic of Korea, (*4)Hongik University, Republic of Korea, and (*5)LG Electronics, Republic of Korea

ThP-OD-21 Demonstration of GaN-based LEDs fabricated with ultraviolet picosecond laser processing
R diger Moser(*1), *Michael Kunzer(*1), Christian u Goler(*1), Klaus K hler(*1), Wilfried Pletschen(*1), o Ulrich T. Schwarz(*1,*2), and Joachim Wagner(*1) (*1)Fraunhofer-Institut f r Angewandte Festk rperphysik u o (IAF), Germany and (*2)Laboratory for Optoelectronics, Institute of Microsystems Engineering (IMTEK), Albert-Ludwigs-University of Freiburg, Germany

ThP-OD-22 Fabrication of Vertical-structured GaN-Based Light-Emitting Diodes Using Auto-Split Laser Lift-Off Technique
*Baoping Zhang, Ming Chen, Lie Cai, Jiangyong Zhang, Li Sun, Fang Jiang, Wenjie Liu, Mingming Liang, Xiaolong Hu, Xiaomei Cai, Xueqin Lv, and Leiying Ying Xiamen University, China

ThP-OD-29 Waveguide optimization in semipolar (In,Al,Ga)N laser diodes

*Jens Rass(*1), Simon Ploch(*1), Tim Wernicke(*1), Markus Weyers(*2), and Michael Kneissl(*1,*2) (*1)Technische Universitaet Berlin, Germany and (*2)Ferdinand-Braun-Institut Berlin, Germany

ThP-OD-23 Preparation of LED Cross Sections Utilizing an Argon Beam System

*Alan Maign , Mike Hassel Shearer, and David Stowe e Gatan Inc., United States of America

ThP-OD-30 Stress Relaxed III-Nitride Based Semipolar (112 2) Lasers

*Po Shan Hsu(*1), Matthew T. Hardy(*1), Feng Wu(*1), Ingrid Koslow(*1), Erin C. Young(*1), Alexey E. Romanov(*1,*2), Kenji Fujito(*3), Daniel F. Feezell(*1), Steven P. Denbaars(*1), James S. Speck(*1), and Shuji Nakamura(*1) (*1)Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, United States of America, (*2)Ioffe Physical-Technical Institute, Russian Academy of Sciences, Russia, and (*3)Optoelectronic Laboratory, Mitsubishi Chemical Corporation, Japan

ThP-OD-24 Improvement of light reectance and thermal stability of Ag Ohmic contacts for GaN-based LEDs using Ag nano-dots
*Joon-Woo Jeon(*1), Woong-Sun Yum(*1), Semi Oh(*2), Kyung-Kook Kim(*2), and Tae-Yeon Seong(*1) (*1)Department of Materials Science and Engineering, Korea University, Republic of Korea and (*2)Department of Nano-Optical Engineering, Korea Polytechnic University, Republic of Korea

ThP-OD-31 Quantum wells acting as absorber in (Al,In)GaN laser diodes because of unequal pumping
*Ulrich T Schwarz(*1,*2) and Wolfgang G Scheibenzuber(*1) (*1)Fraunhofer Institute for Applied Solid State Physics IAF, Germany and (*2)IMTEK, Freiburg University, Germany

ThP-OD-25 Low resistance and transparent Ni/Cu/Indium Tin Oxide ohmic contacts for p-type GaN
Hodol Yoo, Taek-Seung Kim, Yonghoon Han, Semi Oh, and *Kyoung-Kook Kim Department of Nano-Optical Engineering, Korea Polytechnic University, Republic of Korea

ThP-OD-26 Thin-lm Vertical Micro-LEDs

Kwai Hei Li, *Yuk Fai Cheung, and Hoi Wai Choi Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong

ThP-OD-32 Supression of Relaxation in (202 1) 495 nm InGaN/GaN Laser Diodes using Limited Area Epitaxy
*Matthew Thomas Hardy, Shuji Nakamura, James Speck, and Steven DenBaars Materials Department, University of California, Santa Barbara, United States of America

ThP-OD-27 Electrical Characteristics of Nonalloyed Ti/Al Ohmic Contacts on N-face n-Type GaN using the O2 Plasma Treatment
Joon Seop Kwak(*1), *Hyeuk Seo(*1), Min Joo Park(*1), and Tak Jeong(*2) (*1)Department of Printed Electronics Engineering (WCU),Sunchon National University, Republic of Korea and (*2)LED device team, Korea Photonics Technology Institute, Republic of Korea

ThP-OD-33 Engineering the transverse optical guiding in GaNbased VCSELs to avoid detrimental optical loss
*Ehsan Hashemi(*1), Johan Gustavsson(*1), J rgen Bengtso son(*1), Martin Stattin(*1), Anders Larsson(*1), Gatien Cosendey(*2), Nicolas Grandjean(*2), and Asa Haglund(*1) (*1)Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden and (*2)Laboratory of Advanced Semiconductors for Photonics and Electronics, Ecole Polytechnique F d rale de e e Lausanne, Swiss

ThP-OD-28 Effect of growth temperature on the ZnO:Al lm ohmic contact to p-type GaN
Hyunjun Choi(*1), Hodol Yoo(*1), Taehun Park(*1), TaekSeung Kim(*1), Semi Oh(*1), Seungho Yang(*2), and *Kyoung-Kook Kim(*1) (*1)Department of Nano-Optical Engineering, Korea Polytechnic University, Republic of Korea and (*2)Heesung Metal LTD., Republic of Korea

ThP-OD-34 Graphene as transparent electrode for GaN-based VCSELs

*Martin Stattin, Cesar Lockhart de la Rosa, Jie Sun, August Yurgens, Anders Larsson, and Asa Haglund Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden

ThP-OD-35 ZnO/AlN Clad Waveguides for AlGaN-Based Quantum Cascade Lasers

*Martin Stattin, J rgen Bengtsson, and Anders Larsson o Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden

ThP-PR-2 Optical and electrical properties of a-plane GaN light emitting diodes with silica nano-spheres integrated into a-plane GaN buffer layer
*Sung hyun Park(*1), Jeonghwan Jang(*2), Daeyoung Moon(*2), Kisu Joo(*3), Duck-Jae You(*3), Dong-Uk Kim(*4), Hojun Chang(*4), Heonsu Jeon(*4), Jinsub Park(*5), Jimmy Xu(*2,*6), Yasushi Nanishi(*2,*7), and Euijoon Yoon(*1,*2,*3,*8) (*1)Department of Materials Science and Engineering, Seoul National University, Republic of Korea, (*2)WCU Hybrid Materials Program, Department of Materials Science and Engineering, Seoul National University, Republic of Korea, (*3)Department of Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Republic of Korea, (*4)Department of Physics and Astronomy, Seoul National University, Republic of Korea, (*5)Department of Electronic Engineering, Hanyang University, Republic of Korea, (*6)Department of Engineering, Brown University, United States of America, (*7)Department of Photonics, Ritsumeikan University, Japan, and (*8)Energy Semiconductor Research Center, Advanced Institutes of Convergence Technology, Seoul National University, Republic of Korea

ThP-OD-36 Stimulated emission in GaN-based Laser Diodes far below the threshold region
*Ding Li(*1), Hua Zong(*1), Liefeng Feng(*2), Wei Yang(*1), Juan He(*1), Chenghao Wan(*1), Lei Wang(*1), Ningyang Liu(*1), Lei Liu(*1), Wenyu Cao(*1), Lei Li(*1), Weimin Du(*1), Cunda Wang(*1,*2), Xiaodong Hu(*1), and Guoyi Zhang(*1) (*1)School of Physics, Peking University, China and (*2)Department of Applied Physics, Tianjin University, China

ThP-OD-37 Optically pumped vertical cavity surface emitting lasers for the near UV-spectral range with an AlInN/AlGaN distributed Bragg reector
*Christoph Berger(*1), Armin Dadgar(*1), Max B gler(*2), u Christian Nenstiel(*2), Axel Hoffmann(*2), Alexander Franke(*1), J rgen Bl sing(*1), Thomas Hempel(*1), u a J rgen Christen(*1), and Alois Krost(*1) u (*1)Institut fuer Experimentelle Physik, Otto-von-GuerickeUniversitaet Magdeburg, Germany and (*2)Institut fuer Festkoerperphysik, Technische Universitaet Berlin, Germany

ThP-PR-3 Luminescence in the 3.36-3.42 eV region in m-plane GaN:Mg

*Sergey Khromov(*1), Bo Monemar(*1), Vitaly Avrutin(*2), Xing Li(*2), Hadis Morkoc(*2), Lars Hultman(*1), and Galia Pozina(*1) (*1)1Department of Physics, Chemistry, and Biology (IFM), Linkoping University, Sweden and (*2)2 Department of Electrical Engineering and Physics Department, Virginia Commonwealth University, United States of America

ThP-OD-38 Effect of waveguide design on the performance characteristics of blue-violet laser diodes
*Martin Martens(*1), Martin Frentrup(*1), Luca Redaelli(*2), Carsten Netzel(*2), Mark-Antonius Rothe(*1), Bo Zhao(*1), Sven Einfeldt(*2), Tim Wernicke(*1), and Michael Kneissl(*1,*2) (*1)Institut f r Festk rperphysik, TU Berlin, Germany u o and (*2)Ferdinand-Braun-Institut, Leibniz-Institut f r u H chstfrequenztechnik, Germany o

ThP-PR-4 On the nature of the non-linear coherent emissions in optically anisotropic m-plane GaN-based microcavities
Georg Rossbach(*1), Jacques Levrat(*1), Am lie Duse saigne(*1), Henryk Teisseyre(*2,*3), Gatien Cosendey(*1), Marlene Glauser(*1), Munise Cobet(*1), Michal Bockowski(*3), Izabella Grzegory(*3), Tadeusz Suski(*3), *Rapha l Butt (*1), and Nicolas Grandjean(*1) e e (*1)Institute of Condensed Matter Physics, Ecole Polytechnique F d rale de Lausanne (EPFL), 1015 Lausanne, Swiss, e e (*2)Institute of Physics, Polish Academy of Science, 02-668 Warsaw, Poland, and (*3)Institute of High Pressure Physics, Polish Academy of Science, 01-142 Warsaw, Poland

ThP-PR-1 Increased Polarization Ratio for Green (202 1) Light Emitting Diodes Grown on a 1D Relaxed InGaN Buffer Layer
*Matthew Thomas Hardy(*1), Nathan Pfaff(*1), Qimin Yan(*1), Ingrid Koslow(*1), Po shan Hsu(*1), Daniel Feezell(*1), Shuji Nakamura(*1,*2), James Speck(*1), and Steven Denbaars(*1,*2) (*1)Materials Department, University of California, Santa Barbara, United States of America and (*2)Department of Electrical and Computer Engineering, University of California, Santa Barbara, United States of America

ThP-PR-5 Inhomogeneous injection and non-equilibrium effects in polar and nonpolar III-nitride light emitters
*Mikhail V. Kisin, Chih-Li Chuang, and Hussein S. ElGhoroury Ostendo Technologies Inc., United States of America

ThP-PR-6 Forward and reverse bias-induced luminescence of semipolar (11-22) GaN-based light emitting diodes by using epitaxial lateral overgrowth
*Sang-Won Lee, Ki-Ryong Song, and Sung-Nam Lee Department of Nano-Optical Engineering, Korea Polytechnic University, 429-839, KOREA, Republic of Korea

ThP-PR-11 Imaging stacking faults and partial dislocations in non-polar nitrides using a scanning electron microscope
*Naresh Kumar Gunasekar(*1), Carol Trager Cowan(*1), Ben Hourahine(*1), Paul R Edwards(*1), Christof Mauder(*2), H Kalisch(*2), A Vescan(*2), G Giesen(*2), M Heuken(*2,*3), K R Wang(*4), and Achim Trampert(*4) (*1)University of Strathclyde, United Kingdom, (*2)Aixtron, Germany, (*3)RWTH Aachen University, Germany, and (*4)Paul-Drude-Institut fuer Festkoerperelektronik, Germany

ThP-PR-7 Current transport in nonpolar a-plane InN/GaN heterostructure Schottky junction

*Mohana K. Rajpalke(*1), Mahesh Kumar(*1,*2), Thirumaleshwara N. Bhat(*1), Basanta Roul(*1,*2), and S. B. Krupanidhi(*1) (*1)Indian Institute of Science, India and (*2)Central Research Laboratory, India

ThP-PR-12 Elastic constants, composition and piezolectric polarization in InxAl1-xN with arbitrary surface orientations
*M.-Y. Xie(*1), F. Tasn di(*2), I.a. Abrikosov(*3), L. Hulta man(*4), and V. Darakchieva(*5) (*1)IFM, Link ping University, Sweden, (*2)IFM, Link ping o o University, Sweden, (*3)IFM, Link ping University, Sweo den, (*4)IFM, Link ping University, Sweden, and (*5)IFM, o Link ping University, Sweden o

ThP-PR-8 Estimation of the internal electric eld inside polar and semipolar GaN / Al0.5Ga0.5N (11-22) nanostructures
Abdelkarim Kahouli(*1,*2), *Julien Brault(*1), Benjamin Damilano(*1), Nasser Kriouche(*1), Mathieu Leroux(*1), Philippe Vennegues(*1), Philippe de Mierry(*1), Pierre Valvin(*3), Christelle Brimond(*3), Thierry Guillet(*3), and Jean Massies(*1) (*1)Centre de Recherche sur l hetero-Epitaxie et ses Applications, Centre National de la Recherche Scientique, France, (*2)Universitee de Nice Sophia Antipolis, France, and (*3)Laboratoire Charles Coulomb UMR 5221, Universite Montpellier 2- CNRS, France

ThP-PR-13 A study on the photoluminescent properties on nonpolar InGaN/GaN heterostructures with varying indium compositions on LiAlO2 substrates
*D. R. Hang(*1), Mitch M. C. Chou(*1), C. Mauder(*2), and M. Heuken(*3) (*1)National Sun Yat-sen University, Taiwan, (*2)RWTH Aachen University, Germany, and (*3)AIXTRON, Germany

ThP-PR-9 Defect Related Exciton Emission from Semipolar (112 2) GaN Layers
Joanna Papierska(*1), Jan Suffczynski(*1), *Henryk Teisseyre(*2), Slawek Kret(*2), Filip Malinowski(*1), Krzysztof Korona(*1), Benjamin Damilano(*3), Nasser Kriouche(*3,*4), Aimeric Courville(*3), and Philippe de Mierry(*3) (*1)Institute of Exp. Physics, Faculty of Physics, University of Warsaw, Poland, (*2)Institute of Physics, Polish Academy of Sciences, Warsaw, Poland, (*3)Centre de Recherche sur l Hetero-Epitaxie et ses Applications, CNRS, Valbonne, France, and (*4)Universit de Nice Sophia Antipolis, Nice,, e France

ThP-PR-14 Spatially resolved cathodoluminescence investigation of defects in semipolar AlGaN layers on GaN
*Ingo Tischer(*1), Klaus Thonke(*1), Robert A.R. Leute(*2), and Ferdinand Scholz(*2) (*1)Institute of Quantum Matter/Semiconductor Group, University of Ulm, 89069 Ulm, Germany and (*2)Institute of Optoelectronics, University of Ulm, 89069 Ulm, Germany

ThP-PR-15 Anisotropic in-plane strains and degree of polarization in nonpolar a-plane GaN on r-sapphire substrate
*Po-Hsun Laio(*1), Chung-Hsien Tsai(*1), Yu-Yu Chen(*1), Shih-Wei Feng(*1), Benjamin Leung(*2), Christopher d. Yerino(*2), and Jung Han(*2) (*1)Department of Applied Physics, National University of Kaohsiung, Taiwan and (*2)Department of Electrical Engineering, Yale University, United States of America

ThP-PR-10 Observation of local mist-dislocation density of partly relaxed InGaN lm grown on m-GaN using microbeam X-ray diffraction
*Takashi Hanada(*1), Kanako Shojiki(*1), Takaaki Shimada(*1), Jung-Hun Choi(*1), Yasuhiko Imai(*2), Shigeru Kimura(*2), Osami Sakata(*2), Yuhuai Liu(*1), Ryuji Katayama(*1), and Takashi Matsuoka(*1) (*1)Institute for Materials Research, Tohoku University, Japan and (*2)Japan Synchrotron Radiation Research Institute, Japan

ThP-PR-16 Structural and optical properties of c-, m-, aand (20.1)-plane GaN substrates obtained by ammonothermal method
*Jaroslaw Seranczuk(*1), Daniel Kopiec(*1), Magdalena Moczala(*1), Teodor Pawel Gotszalk(*1), Robert Kudrawiec(*2), Robert Kucharski(*3), Marcin Zajac(*3), Roman Doradzinski(*3), and Robert Dwilinski(*3) (*1)Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Poland, (*2)Institute of Physics, Wroclaw University of Technology, Poland, and (*3)AMMONO S.A., Poland

ThP-PR-21 Enhanced internal quantum efciency Graphene/GaN-based multiple-quantum-wells

in

*Huei-Min Huang(*1), Chiao-Yun Chang(*1), Yueh-Shan Hsu(*1), Tien-Chang Lu(*1), Yu-Pin Lan(*1), Shing-Chung Wang(*1), and Wei-Chi Lai(*2) (*1)1Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Taiwan and (*2)2Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Taiwan

ThP-PR-17 Improvement of light extraction efciency nonpolar a-plane (11-20) GaN light emitting diodes based on embedded pyramid-shape air gap structure
*Seongjoo Hwang(*1), Mj Park(*1), Hj Kim(*1), S Jung(*2), Kh Bang(*2), Y Chang(*2), Y Choi(*2), and Joonseop Kwak(*1) (*1)Department of Printed Electronics Engineering and World-class university program, Sunchon National University, Republic of Korea and (*2)Emerging Technology Lab, LG Electronics Inc, Republic of Korea

ThP-PR-22 Inuence of built-in elds on the level positions of electrons and holes in QW InGaN/GaN
*Alexander N. Razzhuvalov Siberian Physical Technical Institute, Tomsk State University, Russia

ThP-PR-23 Efciency improvement of InGaN light emitting diode by nanometer sized Ni-dot/Ag/Pt p-type contact metal with high reectance
*Kyu sang Kim(*1), Myoung gyun Suh(*2), Dong soo Shin(*3), and Jong in Shim(*4) (*1)Department of Applied Physics and Electronics, Sangji University, Republic of Korea, (*2)Department of Applied Physics, California Institute of Technoloty, United States of America, (*3)Department of Applied Physics, Hanyang University, Republic of Korea, and (*4)Department of Electronics and Communication Engineering, Hanyang University, Republic of Korea

ThP-PR-18 Systematic optical characterization of twodimensional electron gases in InAlN/GaN-based heterostructures with different In content
*M-Fatima Romero(*1,*2), Martin Feneberg(*1), Pascal Moser(*1), Christoph Berger(*1), J rgen u Bl sing(*1), Armin Dadgar(*1), Alois Krost(*1), Egidijus a Sakalauskas(*3), Fernando Calle(*2), and R diger Goldu hahn(*1,*3) (*1)Institut f r Experimentelle Physik, u Otto-vonGuericke-Universit t Magdeburg, Germany, (*2)Ina stituto de Sistemas Optoelectrónicos y Microtecnologa (ISOM) & Dep.Ing.Electrónica, E.T.S.I.Telecomunicación,Universidad Polit cnica e de Madrid, Spain, and (*3)Institut f r Physik, Technische u Universit t Ilmenau, Germany a

ThP-PR-24 Improvement of the efciency of 365nm lightemitting diodes by asymmetric coupled multiple quantum barriers
*Yi-Keng Fu(*1), Yu-Hsuan Lu(*2), Rong Xuan(*1,*3), Jenn-Fang Chen(*3), and Yan-Kuin Su(*2) (*1)Electronics and Optoelectronics Reasearch Laboratories, Industrial Technology Research Institute, Taiwan, (*2)Department of Electrical Engineering, Institute of Microelectronics, National Cheng Kung University, Taiwan, and (*3)Electrophysics Department, National Chiao Tung University, Taiwan

ThP-PR-19 Texturing approaches for improving light extraction efciency of InGaN/GaN LEDs grown on 8inch Si substrates
*Nga Phuong Pham, Maarten Rosmeulen, Vasyl Motsnyi, Geert Mannaert, John Slabbekoorn, Vasile Paraschiv, and Evi Vrancken imec Belgium, Belgium

ThP-PR-25 Photo-electrochemical fabrication of porous GaN and their applications in UV and ammonia sensing
Khi Poay Beh, *Fong Kwong Yam, L.K. Tan, S.W. Ng, C.W Chin, and Z. Hassan Universiti Sains Malaysia, Malaysia

ThP-PR-20 Strain engineering in InGaN/GaN MQW LED structures

*Alexander Usikov(*1), Gaurav Gupta(*1), Ramandeep Kaur(*1), Deepak Loomba(*1), Dmitry Zakheim(*2), and Michael Reshchikov(*3) (*1)De Core Nanosemiconductors, Gandhinagar, India, (*2)Epi-Center JSC, St. Petersburg, Russia, and (*3)Virginia Commonwealth University, Richmond, United States of America

ThP-PR-26 Enhancement of the Deection Effect in InGaN/GaN Light-Emitting Diodes with Ovoid Air Hemispheres
*Hyun Kyu Kim School of Semiconductor and Chemical Engineering, Chonbuk National University, Republic of Korea

ThP-PR-27 Electroreectance for Probing Electric Fields in AlGaN/GaN HEMTs

*Yinyan Gong, Mike J Uren, and Martin Kuball Department of Physics, University of Bristol, United Kingdom

ThP-PR-32 On the origin of the 265 nm absorption band in AlN bulk crystals
*Ramon Collazo(*1), Jinqiao Xie(*2), Benjamin E. Gaddy(*1), Zachary Bryan(*1), Ronny Kirste(*1), Marc Hoffmann(*1), Rafael Dalmau(*2), Baxter Moody(*2), Yoshinao Kumagai(*3), Toru Nagashima(*4), Yuki Kubota(*4), Toru Kinoshita(*4), Akinori Koukitu(*3), Douglas L. Irving(*1), and Zlatko Sitar(*1) (*1)Department of Materials Science and Engineering, North Carolina State University, United States of America, (*2)HexaTech, Inc., United States of America, (*3)Department of Applied Chemistry, Tokyo University of Agriculture and Technology, Japan, and (*4)Tsukuba Research Laboratories, Tokuyama Corporation, Japan

ThP-PR-28 Effect of Sapphire Substrate Thickness on Compressive Stress in GaN based Light Emitting Diodes
*Juhui Song(*1), Wael Z. Tawk(*2), Jungju Lee(*3), Seungbae Yang(*4), Minsung Jo(*5), Hyowon Seo(*6), Seojung Bae(*7), Heeseok Choi(*8), Seongho Choo(*9), and Junekey Lee(*10) (*1)Interdisciplinary Program of Photonic Engineering, Chonnam national University, Republic of Korea, (*2)Interdisciplinary Program of Photonic Engineering, Chonnam national University, Republic of Korea, (*3)Interdisciplinary Program of Photonic Engineering, Chonnam national University, Republic of Korea, (*4)Interdisciplinary Program of Photonic Engineering, Chonnam national University, Republic of Korea, (*5)Interdisciplinary Program of Photonic Engineering, Chonnam national University, Republic of Korea, (*6)Interdisciplinary Program of Photonic Engineering, Chonnam national University, Republic of Korea, (*7)Interdisciplinary Program of Photonic Engineering, Chonnam national University, Republic of Korea, (*8)LG Innotek Co., Ltd., Republic of Korea, (*9)LG Innotek Co., Ltd., Republic of Korea, and (*10)Interdisciplinary Program of Photonic Engineering, Chonnam national University, Republic of Korea

ThP-PR-33 Exciton Localization Phenomena in Al-rich AlGaN/AlN Quantum Wells

*Takao Oto, Ryan Ganipan Banal, Mitsuru Funato, and Yoichi Kawakami Department of Electronic Science and Engineering, Kyoto University, Japan

ThP-PR-34 Carrier Dynamics in Pseudomorphic AlGaN Laser Diode Structures Grown on Bulk AlN
*Gregory A. Garrett(*1), Paul Rotella(*1), Hongen Shen(*1), Michael Wraback(*1), Thomas Wunderer(*2), Christopher L. Chua(*2), Zhihong Yang(*2), John E. Northrup(*2), and Noble Johnson(*2) (*1)U.S. Army Research Laboratory, United States of America and (*2)Palo Alto Research Center, Inc., United States of America

ThP-PR-29 Leaser Treatment of GaN and InGaN Thin Films Grown by MOCVD
*Tomas Grinys(*1), Mantas Dmukauskas(*1), Mindaugas Sciuka(*2), and Andrius Melninkaitis(*2) (*1)Institute of Applied Research, Vilnius University, Lithuania and (*2)Laser Research Center, Vilnius University, Lithuania

ThP-PR-35 400 nm luminescence of hexagonal boron nitride

*Baiba Berzina, Valdis Korsaks, and Laima Trinkler Institute of Solid State Physics, University of Latvia, Latvia

ThP-PR-30 Analysis of Carrier Collection in InGaN-based MQW Solar Cells

*Sang-Bae Choi, Jae-Phil Shim, and Dong-Seon Lee Gwangju Institute of Science and Technology, Republic of Korea

ThP-PR-36 Photoluminescence dynamics of high-density excitons in AlGaN mixed crystals

D Hirano(*1), T Tayagaki(*1), Y Yamada(*2), and *Y Kanemitsu(*1) (*1)Institute for Chemical Research, Kyoto University, Japan and (*2)Department of Electrical and Electronic Engineering, Yamaguchi University, Japan

ThP-PR-31 Thermal characterization of GaN-based laser diodes by forward-voltage method

*Mei-Xing Feng(*1,*2,*3), Shu-Ming Zhang(*1,*2), DeSheng Jiang(*3), Jian-Ping Liu(*1,*2), Hui Wang(*1,*2), Chang Zeng(*1,*2,*3), Zeng-Cheng Li(*1,*2,*3), HuaiBing Wang(*1,*2), Feng Wang(*1,*2), and Hui Yang(*1,*2) (*1)Key Laboratory of Nanodevices and Applications, China, (*2)Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, China, and (*3)State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, ChineseAcademy of Sciences, China

ThP-PR-37 Annealing of AlInN-based Heterostructures studied by Insitu X-ray Diffraction

*Lars Khoshroo(*1), Alexander Kharchenko(*1), Michael Heuken(*2), and Joachim F Woitok(*1) (*1)PANalytical B.V., Netherlands and (*2)AIXTRON SE, Germany

ThP-PR-38 Structural and optical properties of thick AlInN layers

*Guillaume Perillat-Merceroz, Gatien Cosendey, JeanFrancois Carlin, and Nicolas Grandjean Institute of Condensed Matter Physics (ICMP), EPFL, Lausanne, Swiss

ThP-PR-43 Numerical investigation of near Ultraviolet lightemitting diodes with dissimilar AlInGaN barrier thickness
*Yu-Hsuan Lu(*1), Yi-Keng Fu(*2), Yan-Kuin Su(*1,*3), Shyh-Jer Huang(*1), Rong Xuan(*2), Ying-Chih Chen(*1), Ming-Yueh Chuang(*1), and Manfred. H. Pilkuhn(*1) (*1)Department of Electrical Engineering, Institute of Microelectronics, National Cheng Kung University, Taiwan, (*2)Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Taiwan, and (*3)Department of Electronic Engineering, Kun-Shan University, Taiwan

ThP-PR-39 AlGaN solar-blind avalanche photodiodes for ame detection

Jianfei Li, Zeqiang Huang, Wenle Zhang, Wei Tan, Weicong Wu, and *Hao Jiang State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, China

ThP-PR-40 Carrier proling technique for DUV LEDs

*Yuta Furusawa(*1), Inazu Tetsuhiko(*1), Shinya Fukahori(*1), Cyril Pernot(*1), Myonghee Kim(*1), Takehiko Fujita(*1), Yosuke Nagasawa(*1), Akira Hirano(*1), Masamichi Ippommatsu(*1), Motoaki Iwaya(*2), Tetsuya Takeuchi(*2), Satoshi Kamiyama(*2), Yoshio Honda(*3), Masashi Yamaguchi(*3), Hiroshi Amano(*3), and Isamu Akasaki(*2) (*1)UV Craftory Co. Ltd., Japan, (*2)Meijo Univ., Japan, and (*3)Nagoya Univ., Japan

ThP-PR-44 Inuence of Al content on the quality and properties of AlGaN on GaAs substrates
*Phannee Saengkaew(*1), Sakuntam Sanorpim(*2), Chanchana Thanachayanont(*3), Visittapong Yordsri(*3), and Kentaro Onabe(*4) (*1)Department of Industrial Physics and Medical Instrumentation, King Mongkuts University of Technology North Bangkok, Thailand, (*2)Department of Physics, Chulalongkorn University, Thailand, (*3)National Metal and Materials Technology Center (MTEC), Ministry of Science and Technology, Thailand, and (*4)Department of Applied Physics Engineering, The University of Tokyo, Japan

ThP-PR-41 Optical and structural properties of intentionally C-doped thick HVPE AlN layers grown on PVT AlN substrates
*Toru Nagashima(*1,*2), Yuki Kubota(*1), Toru Kinoshita(*1), Raoul Schlesser(*3), Baxter Moody(*3), Jinqiao Xie(*3), Hisashi Murakami(*2), Yoshinao Kumagai(*2), Akinori Koukitu(*2), and Zlatko Sitar(*3,*4) (*1)Tsukuba Research Laboratories, Tokuyama Corporation, Japan, (*2)Department of Applied Chemistry, Tokyo University of Agriculture and Technology, Japan, (*3)HexaTech, Inc., United States of America, and (*4)Department of Materials Science and Engineering, North Carolina State University, United States of America

ThP-PR-45 Evidence for strain-induced defects as nonradiative recombination centers in green-emitting GaInN/GaN quantum wells
Torsten Langer, Andreas Kruse, Holger J nen, Heiko Breo mers, Uwe Rossow, and *Andreas Hangleiter Institut f r Angewandte Physik, Technische Universit t u a Braunschweig, Germany

ThP-PR-46 External Tensile Stress on the Characteristics of 450nm-InGaN/GaN Multi-Quantum-Well LightEmitting Diodes
*Wael Z. Tawk(*1), Juhui Song(*2), Jung Ju Lee(*3), Bengso Ryu(*4), Hee Seok Choi(*5), Seong Ho Choo(*6), Woosik Lim(*7), and June Key Lee(*8) (*1)Interdisciplinary Program of Photonic Engineering, Chonnam National University, Republic of Korea, (*2)Interdisciplinary Program of Photonic Engineering, Chonnam National University, Republic of Korea, (*3)Interdisciplinary Program of Photonic Engineering, Chonnam National University, Republic of Korea, (*4)Interdisciplinary Program of Photonic Engineering, Chonnam National University, Republic of Korea, (*5)LG Innotek Co., Ltd, Paju, Republic of Korea, (*6)LG Innotek Co., Ltd, Paju, Republic of Korea, (*7)LG Innotek Co., Ltd, Paju, Republic of Korea, and (*8)Interdisciplinary Program of Photonic Engineering, Chonnam National University, Republic of Korea

ThP-PR-42 Electron Paramagnetic Resonance (EPR) Study on Undoped and Si Doped AlGaN Alloys
Hideyuki Sugimoto(*1), *Kazutoshi Fukui(*1), Kohji Yamamoto(*2), Mamoru Kitaura(*3), Hideto Miyake(*4), Kazumasa Hiramatsu(*4), and Hiroshi Amano(*5) (*1)Faculty of Engineering, University of Fukui, Japan, (*2)Res. Cen. for Develop. of Far-Infrared Region, University of Fukui, Japan, (*3)Faculty of Science, Yamagata University, Japan, (*4)Faculty of Engineering, University of Mie, Japan, and (*5)Graduate School of Engineering, Nagoya University, Japan

ThP-PR-47 Photoluminescence study of plasma induced damage to GaInN SQW

*Shouichiro Izumi(*1), Masaki Minami(*2), Michiru Kamada(*1), Tetsuya Tatsumi(*2), Atsushi A Yamaguchi(*3), Kenji Ishikawa(*4), Masaru Hori(*4), and Shigetaka Tomiya(*2) (*1)Sony Semiconductor Corporation, Japan, (*2)Sony Corporation, Japan, (*3)Kanazawa Institute of Technology, Japan, and (*4)Nagoya University, Japan

ThP-PR-53 Temperature Dependence of the Radiative Recombination Rate in InGaN/GaN Multiple Quantum Well Structures
*Tom J Badcock(*1), Phil Dawson(*1), Menno J Kappers(*2), and Colin J Humphreys(*2) (*1)School of Physics and Astronomy, University of Manchester, United Kingdom and (*2)Department of Materials Science and Metallurgy, University of Cambridge, United Kingdom

ThP-PR-48 Design and Optical Characterization of Novel InGaN/GaN Multiple Quantum Wells Structures by Metal Organic Vapor Phase Epitaxy
*Liyang Zhang(*1,*2), Kai Cheng(*2), Hu Liang(*2), Ruben Remco Lieten(*1,*2), Magdalena Latkowska(*3), Michal Baranowski(*3), Robert Kudrawiec(*3), Jan Misiewicz(*3), Johan Dekoster(*2), and Gustaaf Borghs(*1,*2) (*1)Department of Physics and Astronomy, K.U. Leuven, Belgium, (*2)IMEC, Belgium, and (*3)Institute of Physics, Wroclaw University of Technology, Poland

ThP-PR-54 Optical gain of InGaN-delta-InN quantum well for green laser diodes
*Wei Yang, Tongxing Yan, Yiyang Wu, and Xiaodong Hu State Key Laboratory for Articial Microstructure and Mesoscopic Physics, School of Physics, Peking University, China

ThP-PR-55 The catholuminescence study of epitaxial GaN grown on a novel serpentine masked structure
*Lei Li(*1), Pei-Chi Liu(*2), Chenghao Wan(*1), Ding Li(*1), Weihua Chen(*1), Zhijian Yang(*1), Xiaodong Hu(*1), Guoyi Zhang(*1), and Yahong Xie(*2) (*1)State Key Laboratory for Articial Microstructure and Mesoscopic Physics, School of Physics, Peking University, China and (*2)Department of Materials Science and Engineering, University of California Los Angeles, United States of America

ThP-PR-49 Comparative study of temperature- and biasdependent carrier lifetime in blue and green (In,Ga)N multiple-quantum-well diodes
*Akihiro Satake, Guonan Zhao, Tsuyoshi Fujisaki, and Kenzo Fujiwara Department of Electrical Engineering and Electronics, Kyushu Institute of Technology, Japan

ThP-PR-50 Exciton-exciton interactions in tensile-strained GaN

*Y Toda, K Shigematsu, A Hasegawa, and S Adachi Department of Applied Physics, Hokkaido University, Japan

ThP-PR-56 Application of hopping excitons model to description of photoluminescence properties of GaInNAs alloys
*Robert Kudrawiec, Michal Baranowski, Magda Latkowska, and Jan Misiewicz Institute of Physics, Wroclaw University of Technology, Poland

ThP-PR-51 Investigation of quantum-well shapes and their impacts on the performance of InGaN/GaN lightemitting diodes
*Dong-Soo Shin(*1), Dong-Pyo Han(*1), Min-Goo Kang(*1), Jong-In Shim(*1), Dae-Seob Han(*2), Yong-Tae Moon(*2), and Joong-Seo Park(*2) (*1)Hanyang University, Republic of Korea and (*2)LG Innotek, Republic of Korea

ThP-PR-57 Quantum connement in thin GaN cap layers deposited on AlGaN/GaN heterostructures
*Marta Gladysiewicz and Robert Kudrawiec Institute of Physics, Wroclaw University of Technology, Poland

ThP-PR-58 T-dependence of local vibrational modes of Mg-H complexes in InN:Mg

*Ramon Cusco(*1), Nuria Domenech-Amador(*1), Luis Artus(*1), Ke Wang(*2), Tomohiro Yamaguchi(*2), and Yasushi Nanishi(*2) (*1)Inst. Jaume Almera, C.S.I.C. , Barcelona, Spain and (*2)Faculty of Science and Engineeriong, Ritumeikan University, Shiga, Japan

ThP-PR-52 Optical nano-effects in thin epitaxial layers of InGaN

*Dimiter Alexandrov(*1,*2), Scott Butcher(*1,*2), Rositsa Gergova(*1), Peter Binsted(*1), Penka Terziyska(*1), Dimka Georgieva(*1), and Vasil Georgiev(*1) (*1)Lakehead University, Canada and (*2)Meaglow Ltd., Canada

ThP-PR-59 Inuence of surface electron accumulation layer on reverse spin Hall effect in InN lms at room temperature
*Fuhong Mei(*1), Ning Tang(*1), Xinqiang Wang(*1), Junxi Duan(*1), Shan Zhang(*1), Yonghai Chen(*2), Weikun Ge(*3), and Bo Shen(*1) (*1)State Key Laboratory of Articial Microstructure and Mesoscopic Physics, School of Physics, Peking University, China, (*2)Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, China, and (*3)Department of Physics, Tsinghua University, China

ThP-PR-63 P-type InGaN across the entire composition range

*Ke Wang(*1), Takuro Katsuki(*1), Junichi Sakaguchi(*1), Tsutomu Araki(*1), Yasushi Nanishi(*1,*2), Kin Man Yu(*3), Marie A Mayer(*3), Esther Alarcon-Llado(*3), Joel W Ager iii(*3), and Wladek Walukiewicz(*3) (*1)Ritsumeikan University, Japan, (*2)Seoul National Unviersity, Republic of Korea, and (*3)Lawrence Berkeley National Laboratory, United States of America

ThP-PR-64 Molecular Beam Epitaxial Growth and Characterization of Mg-doped InN Nanowires on Si substrate
Songrui Zhao and *Zetian Mi Dept of Electrical and Computer Engineering, McGill University, Canada

ThP-PR-60 Strong correlation between oxygen donor and nearsurface electron accumulation in non-polar mplane (10-10) InN lm
*Anli Yang(*1), Yoshiyuki Yamashita(*1), Hideki Yoshikawa(*1), Tomohiro Yamaguchi(*2,*3), Masataka Imura(*4), Masamitsu Kaneko(*2), Osami Sakata(*1), Yasushi Nanishi(*2,*5), and Keisuke Kobayashi(*1) (*1)Synchrotron X-ray Station at SPring-8,National Institute for Materials Science, Japan, (*2)Ritsumeikan University, Japan, (*3)Kogakuin University, Japan, (*4)Optical and Electronic Materials Unit, National Institute for Materials Science, Japan, and (*5)Seoul National Univ., Republic of Korea

ThP-PR-65 Angled-resolved XPS measurements of InN lms grown by RF-MBE

*Ryosuke Amiya(*1), Tomohiro Yamaguchi(*1,*2), Daiki Tajimi(*1), Masato Hayashi(*1), Yohei Sugiura(*1), Tohru Honda(*1), Tsutomu Araki(*2), and Yasushi Nanishi(*2,*3) (*1)Depart of Electrical Engineering and Electronics, Graduate School of Engineering, Kogakuin University, Japan, (*2)R-GIRO, Ritsumeikan University, Japan, and (*3)2WCU Program, Seoul National University, Republic of Korea

ThP-PR-61 Injection-activated defect-governed recombination rate in InN

Saulius Nargelas(*1), *Kestutis Jarasiunas(*1), Mikas Vengris(*2), Tomohiro Yamaguchi(*3), and Yasushi Nanishi(*3) (*1)Institute of Applied Research, Vilnius University, Vilnius, Lithuania, (*2)Laser Research Center, Vilnius University, Lithuania, and (*3)Departament of Photonics, Ritsumeikan University, Kusatsu, Japan

ThP-PR-66 Radiative and nonradiative recombination in Sidoped InN thin lms

*Der-Jun Jang(*1), Antaryami Mohanta(*1), C.-F. Tseng(*1), Li-Wei Tu(*1), and M.-E. Lee(*2) (*1)Department of Physics, National Sun Yat-sen University, Taiwan and (*2)Department of Physics, National Kaohsiung Normal University, Taiwan

ThP-PR-62 Spectroscopic ellipsometry and optical Hall effect study of InN:Mg Identication of p type doping and determination of free hole parameters
*Vanya Stefan Sch che(*1), o Tino Hofmann(*1), Darakchieva(*2), Nebiha Ben Sedrine(*2,*3), Xinqiang Wang(*4), Akihiko Yoshikawa(*5), and Mathias Schubert(*1) (*1)Department of Electrical Engineering and Center for Nanohybrid Functional Materials, University of NebraskaLincoln, United States of America, (*2)Department of Physics, Chemistry and Biology (IFM), Link ping Univero sity, Sweden, (*3)Instituto Tecnológico e Nuclear and Instituto Superior T cnico, Universidade T cnica de e e Lisboa, Portugal, (*4)State Key Laboratory of Articial Microstructure and Mesoscopic Physics, Peking University, Beijing, China, and (*5)Graduate School of Electrical and Electronics Engineering, Venture Business Laboratory, Chiba University, Chiba, Japan

ThP-PR-67 Temperature-Dependent Dimensionality and Optical Properties of InN

*Dan-Hua Hsieh(*1), Fang-I Lai(*2), Shou-Yi Kuo(*3), Woei-Tyng Lin(*2), and Hao-Chung Kuo(*1) (*1)Department of Photonics and Institute of ElectroOptical Engineering, National Chiao Tung University, Taiwan, (*2)Department of Photonics Engineering, Yuan-Ze University, Taiwan, and (*3)Department of Electronic Engineering, Chang Gung University, Taiwan

ThP-PR-68 Critical current density of superconducting InN

*Takashi Inushima Department of Electronics, Tokai University, Japan

ThP-ED-1 Au-free GaN HEMT technology for power electronics application

*Zhihong Liu(*1,*2), Min Sun(*1), Hyung-Seok Lee(*1), Tomas Palacios(*1,*2), and Michael Heuken(*3) (*1)Microsystem Technology LabMassachusetts Institute of Technolgoy, United States of America, (*2)Singapore MIT Alliance for Research and Technology, Singapore, and (*3)AIXTRON SE, Germany

ThP-ED-2 Electroplated Schottky-Contact on Photoelectrochemically Controlled Surface of n-GaN

*Koki Kitazawa, Akihiro Koyama, Seiji Nakamura, and Tsugunori Okumura Department of Electrical and Electronic Engineering, Tokyo Metropolitan University, Japan

ThP-ED-10 Impact of High Temperature Annealing on the Dynamic On-resistance of AlGaN/GaN MIS-HEMTs
*Tatsuya Fujishima(*1), Omair Saadat(*1), Daniel Piedra(*1), Feng Gao(*1), Akira Uedono(*2), and Tom s a Palacios(*1) (*1)Massachusetts Institute of Technology, United States of America and (*2)Tsukuba University, Japan

ThP-ED-3 A New Method to Modify 2DEG Density by GaN Cap Etching

*Zhongda Li and T. Paul Chow Rensselaer Polytechnic Institute, United States of America

ThP-ED-11 Effect of growth temperature on electrical properties of Al2O3 deposited on GaN using ozone-based atomic layer deposition
*Toshiharu Kubo, Joseph J Freedsman, Yasuhiro Iwata, and Takashi Egawa Research Center for Nano-Device and System, Nagoya Institute of Technology, Japan

ThP-ED-4 Characterization of Plasma Induced Damage in Near Surface Region by Using AlGaN/GaN HEMT Structure
*Takuma Takimoto, Koji Takeshita, Seiji Nakamura, and Tsugunori Okumura Department of Electrical Electronic Engineering, Tokyo Metropolitan University, Japan

ThP-ED-12 Iridium oxide based gates of AlGaN/GaN HEMTs formed by high temperature oxidation
*Martin Vallo(*1), Gabriel Vanko(*1), Tibor Lalinsky(*1), Ivan Ryger(*1), Jaroslav Dzuba(*1), Andrej Vincze(*2), Edmund Dobrocka(*1), and Jozef Osvald(*1) (*1)Institute of Electrical Engineering, Slovak Academy of Sciences, Slovakia and (*2)International Laser Center, Slovakia

ThP-ED-5 Plasma instability and wave propagation in gatecontrolled GaN conduction channels
*Sergey Rudin and Greg Rupper U. S. Army Research Laboratory, United States of America

ThP-ED-6 Advanced etching condition for aggressive shortening of gate foot

*Kai Zhang(*1), Xiaohua Ma(*2), Yutong Zhang(*1), Huilong Zhang(*2), Xueyang Liao(*1), Chong Wang(*1), and Yue Hao(*1) (*1)School of Microelectronics ,Xidian University, China and (*2)School of Technical Physics,Xidian University, China

ThP-ED-13 MOS Interface and Dielectric properties of ALD SiO2 on GaN

*Shinya Takashima(*1,*2), Zhongda Li(*1), and T. Paul Chow(*1) (*1)Rensselaer Polytechnic Institute, United States of America and (*2)Fuji Electric Co. Ltd., Japan

ThP-ED-14 Ga2O3/GaN single nanowire MOSFET with cut-off frequency 150GHz

Jeng-Wei Yu, Chi-Kang Li, *Po-Chun Yeh, Yuh-Renn Wu, and Lung-Han Peng the Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taiwan

ThP-ED-7 Inuence of annealing on DC performance for AlGaN/GaN MIS HEMTs

*Maiko Hatano, Yuya Taniguchi, Hirokuni Tokuda, and Masaaki Kuzuhara Graduate School of Engineering, University of Fukui, Japan

ThP-ED-8 Improved high temperature device transport property and off-state characteristics of AlGaN/GaN power device with atomic layer deposition (ALD) HfAlO high-k dielectric
*Bongmook Lee, Young-Hwan Choi, Casey Joe Kirkpatrick, Alex Q Huang, and Veena Misra Department of Electrical and Computer Engineering, North Carolina State University, United States of America

ThP-ED-15 Analysis of Gate Leakage Characteristics of Al2O3/GaN-MOSFETs by TMAH treatment

*Mi-Kyung Kwon, Ki-Won Kim, Ki-Sik Im, Dong-Seok Kim, Hee-Sung Kang, Young-Woo Jo, Mallem Sivapratap Reddy, Chul-Ho Won, Ryun-Hwi Kim, Kyu-Il Jang, Yoo-Mi Kwon, Dong-Hyeok Son, Sang-Min Jeon, Vodapally Sindhuri, and Jung-Hee Lee Kyungpook National University, Republic of Korea

ThP-ED-9 Control of threshold voltage in GaN based MOSHEMTs towards the normally-off operation
*Milan Tapajna and Jan Kuzmik Institute of Electrical Engineering, Slovak Academy of Sciences, Slovakia

ThP-ED-16 Self-aligned Mo-gate enhancement-mode GaN metal-insulator-semiconductor eld-effect transistors

*Y. M. Hsin(*1), C. C. Hu(*1), M. J. She(*1), H. C. Chiu(*2), S. Taguchi(*3), Kazuki Nomoto(*3), and T. Nakamura(*3) (*1)National Central University, Taiwan, (*2)Chang Gung University, Taiwan, and (*3)Hosei University, Japan

ThP-ED-24 Effect of nitride barrier layer on the reduction of hysteresis of GaN-based MISFET device
*Woo young Yang, Yong young Park, Wenxu Xianyu, Jeong yub Lee, Yeon hee Kim, Sung hee Lee, Chang youl Moon, In jun Hwang, and Jae jun Oh Samsung Advanced Institute of Technology, Samsung Electronics Company, Republic of Korea

ThP-ED-17 Positive Flatband Voltage Shift in Al2O3/GaN MIS Capacitors with Post-Deposition Annealing in O2 Ambient
*Hee-Sung Kang, Mallem Siva pratap Reddy, Dong-Seok Kim, Chung-Mo Yang, Ryun-Hwi Kim, Yoo-Mi Kwon, Dong-Hyeok Son, Young-Woo Jo, Yong soo Lee, and JungHee Lee School of electrical engineering & computer science, Kyungpook National University, Republic of Korea

October 18

Session ThP-LN

Poster Presentation 3 Late News

Room : Main Hall 19:15 - 21:00 ThP-LN-1 19:15 - 20:00 Effects of Ar and N2 Partial Pressures on the Structural and Optical Properties of GaN Nanorods Grown by Magnetron Sputter Epitaxy
*Muhammad Junaid Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Link ping University, Sweden o

ThP-ED-18 Direct comparison of thin NiO layers in the role of gate insulator or as Schottky gate electrode of AlGaN/GaN HEMT
*Gabriel Vanko, Martin Vallo, Ivan R ger, Jaroslav Dzuba, y and Tibor Lalinsk y Institute of Electrical Engineering, Slovak Academy of Sciences, Slovakia

ThP-ED-19 The Fabrication of Normally-off GaN MIS-HFET Using Selective Area Growth Technique
*Yao Yao, Jialin Li, Zhiyuan He, Zhen Shen, Fan Yang, Yiqiang Ni, Zhisheng Wu, Baijun Zhang, and Yang Liu School of Physics and Engineering, Sun Yat-Sen University, China

ThP-LN-2 19:15 - 20:00 Catalyst temperature (RT1000°C) dependence of NH3 decomposition for MOVPE growth of InN
*Kenichi Sugita(*1), Daizo Hironaga(*1), Akihiro Mihara(*1), Akihiro Hashimoto(*1), and Akio Yamamoto(*1,*2) (*1)University of Fukui, Japan and (*2)JST-CREST, Japan

ThP-ED-20 Hysteresis-like effect in AlGaN GaN MISHFETs with SiN gate dielectric
*Mina Jean Hanna, Han Zhao, and Jack C. Lee Department of Electrical and Computer Engineering, University of Texas at Austin, United States of America

ThP-LN-3 19:15 - 20:00 Enhancement of Growth Rate in InN MBE Growth by Using Multiple RF Plasma Cells
*Yuichi Sato, Kosuke Funaki, Hiroki Takemoto, Masato Iwaki, and Tatsuya Matsunaga Department of Electrical and Electronic Engineering, Akita University, Japan

ThP-ED-21 Electrical and Analytical Characteristics of Atomic Layer Deposited Dielectrics for AlGaN/GaN Device Applications
*Narayanan Ramanan, Bongmook Lee, Casey Kirkpatrick, Rahul Suri, and Veena Misra Department of Electrical and Computer Engineering, North Carolina State University, United States of America

ThP-LN-4 19:15 - 20:00 In-situ Raman probing of the electron accumulation layer in InN
*Esther Alarcon llado(*1,*2), Ke Wang(*3), Tsutomu Araki(*3), Yasushi Nanishi(*3,*4), and Joel W Ager(*2) (*1)Ecole Polytechnique Federale de Lausanne, Swiss, (*2)Lawrence Berkeley National Laboratory, United States of America, (*3)Ritsumeikan University, Japan, and (*4)Seoul National University, Republic of Korea

ThP-ED-23 Surface states inuence on capacitance properties of dielectric/AlGaN/GaN heterostructures

*Jozef Osvald Institute of Electrical Engineering, Slovak Academy of Sciences, Slovakia

ThP-LN-5 19:15 - 20:00 Fabrication and characteristics of InGaN/GaN MQWs light emitting diodes with top and sidewall GaOOH nanostructures
*Jae su Yu(*1), Hee kwan Lee(*2), Myung sub Kim(*3), and Soo hyun Lee(*4) (*1)Department of Electronics and Radio Engineering, Kyung Hee University, Republic of Korea, (*2)Department of Electronics and Radio Engineering, Kyung Hee University, Republic of Korea, (*3)Department of Electronics and Radio Engineering, Kyung Hee University, Republic of Korea, and (*4)Department of Electronics and Radio Engineering, Kyung Hee University, Republic of Korea

October 19

Plenary Session
Room : Main Hall 9:00 - 11:00 PL-3 (plenary) 9:00 - 10:00 High Efciency GaN Power Devices: The Technology & Business Opportunities
*Yifeng Wu Transphorm Inc., United States of America

ThP-LN-6 19:15 - 20:00 Electrooptical effect in electroreectance spectra of AlGaN/InGaN/GaN LED structures
*Pavel Yu. Bokov, Lev P. Avakyants, Artem E. Aslanyan, Anatoly V. Chervyakov, and Kirill Yu. Polozhentsev M.V. Lomonosov Moscow State University, Physics dept., Russia

PL-4 (plenary) 10:00 - 11:00 Current status and future prospects of GaN-based LDs
*Shinichi Nagahama Nichia corporation, Japan

ThP-LN-7 19:15 - 20:00 Observation of Side-gating Effect in AlGaN/GaN HFETs

*Yasuo Ohno, Yusuke Kio, Yusuke Ikawa, and Jin-Ping Ao The University of Tokushima, Japan

October 19

Summary Session
Room : Main Hall 11:30 - 12:30

ThP-LN-8 19:15 - 20:00 High Thermal Stability In-situ SiNx AlGaN/GaN Enhancement-Mode HEMTs Using TiW Refractory Gate Structure
*Chao-Hung Chen(*1), Han-Ju Kuo(*1), Yi-Cheng Lo(*1), Hsien-Chin Chiu(*1), and Heng-Kuang Lin(*2) (*1)Chang Gung Univ., Taiwan and (*2)HUGA, Taiwan

October 19

Closing
Room : Main Hall 12:30 - 13:00

ThP-LN-9 19:15 - 20:00 Device Characteristics of AlGaN/GaN MIS-HFETs Using High-k HfxZr1-xO Insulator Layers
*Chia-Hsuan Wu, Chih-Wei Yang, Chao-Hung Chen, and Hsien-Chin Chiu Chang Gung Univ., Taiwan