GATE Placement Paper Electronics Communication Engineering 20732

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Paper Type Test Date Test Location Posted By : Electronics-Communication-Engineering : 26 Dec 2012 : Previous years : Rhithik
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Tablet
GATE - 2003
One Mark Questions
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5,000
1. n-type silicon is obtained by doping silicon with (a) Germanium (b) Aluminum (c) Boron (d) Phosphorus (Ans) Solution : n type is formed by doping with pentavalent impurity (P). View All >> Others are G(4) and Al (3) B(3)
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2. For an n-channel enhancement typed MOSFET, if the source is connected at a higher potential than that of the bulk (i.e VSB > 0), the threshold voltage VT of the MOSFET will (a) remain unchanged (b) decrease (c) change polarity (d) increase Solution : VT material used. is independent of circuit parameter, it depends on fabrication process and (Ans)
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GATE - 2003
Two Marks Questions
3. An n-type silicon bar 0.1 cm long and 100 m2 in cross sectional area has a majority carrier concentration of 5 * 1020 / m3 and the carrier mobility is 0.13 m2 / Vs at 300 K. If the charge of an electron is 1.5 * 10-19 coulomb, then the resistance of the bar is (a) 106 ohm (b) 104 ohm (c) 10-1 ohm (d) 10-4 ohm Solution : Conductivity s = n e n + p e p For N type s = n e n Resistively = [1/n e n] (Ans)
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Resistance of the bar = [r l/A] = [ l/s . A] [ l/n e n . A] = 10-3 / (5 * 1020 * 1.6 * 10-19 * 0.13) * 100 * 10-6 * 10-6 = 106 ohm 4. Match items in Group I with items in Group II, most suitably.
Group I
A. LED B. Avalanche photodiode C. Tunnel diode D. LASER Codes : A (a) 1 (b) 2 (c) 3 (d) 2 B 2 3 4 1 C 4 1 1 4 D 3 4 2 3 (Ans) 1. Heavy doping
Group II
2. Coherent radiation 3. Spontaneous emission 4. Current gain
Solution : The correct match is give below LED Avalanche photodiode Tunnel diode LASER Spontaneous emission
Current gain Heavy doping

Coherent radiation
5. A particular green LED emits light of wavelength 5490 A. The energy band gap of the semiconductor material used there is (Planck's constant = 6.626 * 10-34 J-s) (a) 2.26 eV (b) 1.98 eV (c) 1.17 eV (d) 0.74 eV Solution : l = [C/f] ; [C/l] E = hf = hC/l= 6.625 * 10-34 * 3 * 108 / 5490 * 10-10 Jules = 3.62 * 10-19 Jules. In e V, the energy Band Gap Energy = [E/e] = 3.62 * 10-19 / 1.6 * 10-19 = 2.26 e V 6. If P is Passivation, Q is n-well implant, R is metallization and S is source/drain diffusion, then the order in which they are carried out in a standard n-well CMOS fabrication process, is (a) P-Q-R-S (b) Q-S-R-P (c) R-P-S-Q (d) S-R-Q-P Solution : In n-well CMOS fabrication following are the steps 1. n-well implant 2. Source/drain diffusion 3. Metalization 4. Passivation 7. The electron concentration in sample of uniformly doped n-type silicon at 300 K varies linearly from 1017/cm3 at x = 0 to 6 * 1016/cm3 at x = 2m. Assume a situation that electrons are supplied to keep this concentration gradient constant with time. If electronic charge is 1.6 * 10-19 coulomb and the diffusion constant Dn = 35 cm2/s, the current density in the silicon, if no electron field is present, is (a) zero (b) -1120 A/cm2 (c) +1120 A/cm2 (Ans) (Ans) (Ans)
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(d) -1120 A/cm
Solution : Jn = + q Dn [dn/dx] [1.6 * 10-19 * 35 * 10-4] * (6 * 1016 - 10+17) / 2 * 10-6 = 1.6 * 10-19 * 35 * 10-4 * [4/2] * 1022 = + 1120 A/cm2 8. At 300 K, for a diode current of 1 mA, a certain germanium diode requires a forward bias of 0. 1435 V, whereas a certain silicon diode requires a forward bias of 0.718 V. Under the conditions stated above, the closest approximation of the ratio of reverse saturation current in germanium diode to that in silicon diode is (a) 1 (b) 5 (c) 4 * 103 (Ans) (d) 8 * 103 Solution : VT = 300 K I = 1 mA For Si, I = I0 Si [exp V/n VT - 1] ; 1 mA . = I0 Si [exp 0.718/ 2 * 0.03 -1] For, Ge I = I0 Ge [exp 0.1435 / 1 * 0.03 -1] I0 Ge / I0 Si = I0 Ge exp [0.1435 / 1 * 0.03 - 1] I0 Si = [exp 0.718 / 1 * 0.03 - 1] I0 Ge / I0 Si = exp [0.718 / 0.06] exp [0.435 / 0.03] 4 * 103 n = 2 for Si
9. When the gate-to-source voltage (VGS ) of a MOSFET with threshold voltage of 400 m V, working in saturation is 900 m V, the drain current is observed to be 1 mA. Neglecting the channel width modulation effect and assuming that the MOSFET is operating at saturation, the drain current for an applied VGS of 1400 m V is (a) 0.5 mA (b) 2.0 mA (c) 3.5 mA (d) 4.0 mA (Ans) Solution : Given that, For VT = 400 mV ID = 1 mA Vgs = 900 mV For Vgs = 1400 mV ID = ? Using, ID = K(Vgs - VT)2 ( 900 - 400 )2 1400 - 400
1 * 10-3 / ID =
1 * 10-3 / ID = 1/4 ID = 4 mA 10. The action of a JFET in its equivalent circuit cab best be represented as a (a) Current Controlled Current Source (b) Current Controlled Voltage Source (c) Voltage Controlled Voltage Source (d) Voltage Controlled Current Source (Ans) Solution : For a JEET in active region we have IDs = IDs (1 - VGS / VP)2 From above equation it is clear that the action of a JFET is voltage controlled current source
GATE - 2004
One Mark Questions
11. The impurity commonly used for realizing the base region of a silicon n-p-n transistor is (a) Gallium (b) Indium
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(d) Phosphorus
(c) Boron (Ans) Solution : Boron is an atom of Group III element, Group III elements are used for making ptype series conducts 12. If for a silicon n-p-n transistor, the base-to-emitter voltage (VBE) is 0.7 V and the collector-to-base voltage (VC B ) is 0.2 V, then the transistor is operating in the (a) Normal active mode (b) Saturation mode (c) Inverse active mode (d) Cutoff mode Solution : (Ans)
If, VBE = 0.7 V --- Forward biased VC B = 0.2 V ---- Reverse biased Transistor operate in normal active mode 13. Consider the following statements S1 and S2. S1 : The b of a bipolar transistor reduces if the base width is increased S2 : The b of a bipolar transistor increase if the doping concentration in the base is increased. Which one of the following is correct ? (a) S1 is FALSE and S2 is TRUE (b) Both S1 and S2 are TRUE (c) Both S1 and S2 are FALSE (d) S1 is TRUE and S2 is FALSE (Ans) Solution : b is the current gain of transistor 1. of a bipolar transistor increase with decrease in base width 2. The b of the Bipolar transistor increase with lightly doped concentration in base with i.e. if lightly doped less base current b is high only when base is lightly doped & very thin
GATE - 2004
Two Marks Questions
14. The drain of an n-channel MOSFET is shorted to the gate so that VGS = VDS . The threshold voltage (VT) of MOSFET is 1 V. If the drain current (ID ) is 1 mA for VGS = 2 V, then for VGS = 3 V, 1D is (a) 2 mA (b) 3 mA (c) 9 mA (d) 4 mA VT = 1, (Ans) VGS = 3 V, ID = ? Solution : VT = 1 V, ID = 1 mA, VGS = 2 V ID = k (VGS - VT)2 ID2/ID1 = (VGS2 - VT)2/(VGS1 - VT)2 = (3 - 1)2/(2-1)2 ID2 = [4 / 1] * 1 = 4 mA 15. In an abrupt p-n junction, the doping concentrations of the p-side and n-side are NA = 9 * 1016 / cm3 respectively. The p-n junction is reverse biased and the total depletion width is 3 m. The depletion width on the p-side is (a) 2.7 m (b) 0.3 m (c) 2.25 m (d) 0.75 m Solution : Doping width of depletion layer (Ans)
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NA XP = ND (X - XP) Where, X = Total depletion width Or, 9 * 1016 XP = 1 * 1016 (3 - XP) Or, 9 XP = 3 - XP Or, 10 XP = 3 XP = [3 / 10] = 0.3 m 16. The resistively of a uniform doped n-type silicon sample is 0.5 -cm. If the electron mobility (n) is 1250 cm2/ V-sec and the charge of an electron is 1.6 * 10-19 Coulomb, the donor impurity concentration (ND ) in the sample is (a) 2 * 1016/cm3 (b) 1 * 1016/cm3 (c) 2.5 * 1015/cm3 (d) 5 * 1015/cm3 Solution : Conductivity for N-type Semi conductor is sN = eND n ND = sN / n e = 1 / 0.5 * 1.6 * 10-19 * 1250 = 1 * 1016/cm3 17. Consider an abrupt p-junction. Let Vbi be the built-in potential of this junction and VR be the applied reverse bias. If the junction capacitance (Cj) is 1 pF for Vbi + VR = 1 V, the for Vbi + VR = 4 V, Cj will be (a) 4 pF (b) 2 pF (c) 0.25 pF (d) 0.5 pF (Ans) Solution : Cj [1 / (Vbi + VR)] = i.e. [1 / Vj] [C2 / C1] (1 / 4) C2 = 0.5 pF 18. Consider the following statement S1 and S2. S1 : The threshold voltage (VT) of a MOS capacitor decreases with increase in gate oxide thickness S2 : The threshold voltage (VT) of a MOS capacitor decreases with increase in substrate doping concentration Which one of the following is correct ? (a) S1 is FALSE and is S2 TRUE (b) Both S1 and S2 are TRUE (c) Both S1 and S2 are FALSE (Ans) (d) S1 is TRUE and S2 is FALSE Solution : For N-Channel MOSFET VT = Threshold voltage ND = Doner concentration C = Capacitance t = thickness = d VT (ND ) VT 1/C = 1 (e0 A) / d t (Ans)
VT VD and VT t VT of a MOS capacitor increase with increase substrate doping concentration 19. The longest wavelength that can be absorbed by silicon, which has the band-gap of 1.12 eV, is 1.1 m. If the longest wavelength that can be absorbed by another material is 0.87 m, then the band-gap of this material is (a) 1.416 eV (b) 0.886 eV (c) 0.854 eV (d) 0.706 Ev (Ans)
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Solution : Eg(ev) = [hC / l] Eg(ev) = 12400 / l(A0) = 12400 / 0.8700 * 10-6 * 10-4 = 1.416 eV Second Method E = hc/ l = 6.626 * 10-34 * 3 * 108 / 0.87 * 10-6 = 22.85 * 10-20 Joules E = 22.85 * 10-20 / 1.6 * 10-19 eV = 1.42 eV 20. The neutral base width of a bipolar transistor, biased in the active region, is 0.5 m. The maximum electron concentration and the diffusion constant in the base are 1014/cm3 and Dn
= 25 cm2/sec respectively. Assuming negligible recombination in the base, the collector current density is (the electron charge is 1.6 * 10-19 coulomb) (a) 800 A/cm2 (b) 8 A/cm2 (d) 2 A/cm2 Solution : Diffusion current density Jn = e. Dn. [dn / dx] Where, dx = 0.5 m = 0.5 * 100 cm dn = 1014 / cm3 Dn = 25 cm2 / s e = 1.6 * 10-19 C Jn = e. Dn . [dn / dx] = 1.6 * 10-19 * 25 * 1014 / (0.5 * 10-6) * 102 = 1.6 * 50 * 10-1 = 8 A/m2 (Ans) (c) 200 A/cm2
GATE - 2005
One Mark Questions
21. The band gap of Silicon at room temperature is (a) 1.3 eV (b) 0.7 eV (c) 1.1 eV (Ans) (d) 1.4 eV Solution : Eg(Si) = 1.21 - 3.6 * 10-4 T (290) = 1.1 eV Eg(Ge) = 0.785 - 2.23 * 10-4 T (290) = 0.76 eV 22. A Silicon PN junction at a temperature of 200C has a reverse saturation current of 10 pico-Amperes (pA). The reverse saturation current at 400C for the same bias is approximately. (a) 30 pA (b) 40 pA (Ans) (c) 50 pA (d) 60 pA Solution : temperature. Reverse saturation current becomes doubles for every 10 degree, rise in
Is = 10 pA at 200 C ; Is = 20 pA at 300 C Is = 40 pA at 400 C 23. The primary reason for the widespread use of Silicon in semiconductor device technology is (a) Aboundance of Silicon on the surface of the Earth (b) Large band-gap of Silicon in comparison to Germanium (c) Favorable properties of Silicon-dioxide (Si O2) (Ans) (d) Lower melting point
GATE - 2005
Two Marks Questions
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24. A Silicon sample A is doped with 1018 of Boron. Another sample B of identical dimensions is doped with 1018 atoms/cm3 of Phosphorus. The ratio of conductivity of the sample A to B is (a) 3 (b) [1/3] (Ans) (c) [2/3] (d) [3/2] Solution : Boron group - III element phosphoron group - V element Conductivity is proportional to doping concentration NA = 1018, NB = 1018, [A / B ] = [1 / 3] s= n q Where, n Carrier concentration sA / sB = A / B = 1/3 25. A silicon PN junction diode under reverse bias has depletion region of width 10 m. The relative permittivity of Silicon, eT = 11.7 and the Permittivity of free space e0 = 8.85 * 10-12 F/m. The depletion capacitance of the diode per square meter is (a) 100 F (b) 10 F (Ans) (c) 1 F (d) 20 F Solution : C = eA/d = e0erA/d [C / A] = e0er = 11.7 * 8.85 * 10-12 / 10 * 10-6 [C / A] = 10.35 F 26. For an n-channel MOSFET and its transfer curve shown in the figure, the threshold voltage is
(a) 1 V and the device is in active region (b) - 1 V and the device is in saturation region (c) 1 V and the device is in saturation region (Ans) (d) -1 V and the device is in active region
VDS = 5 - 1 = 4 ;
VGS = 3 - 1 = 2 VGS i.e. 4 > 1
VGS - Vth = 2 - 1 = 1 In present case : VDS >, So device is in saturation
GATE - 2006
One Mark Questions
27. The value of voltage (VD ) across a tunnel-diode corresponding to peak and valley currents are VP and VV respectively. The range of tunnel diode voltage VD for which the slope of its I- VD characteristics is negative would be. (a) VD < 0 (b) 0 VD < VP
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(d) VD VV
(c) VP VD < VV (Ans) Solution : The tunnel diode has characteristic
28. The concentration of minority carriers in an extrinsic semiconductor under equilibrium is (a) Directly proportional to the doping concentration (b) Inversely proportional to the doping concentration (Ans) (c) Directly proportional to the intrinsic concentration (d) Inversely proportional to the intrinsic concentration Solution : If it is extrinsic then n + Na = Nd + p for N-type ------n = Nd So here n.p = ni2 p = [ni / Nd] 29. Under low level injection assumption, the injected minority carrier current for an extrinsic semiconductor is essentially the (a) Diffusion current (b) Drift current (c) Recombination current (d) Induced current Solution : Under forward bias conduction the majority current flow i.e. drift current & under no bias conduction or low level injection the minority current flow i.e. diffusion current. 30. The phenomenon known as "Early Effect'" in a bipolar transistor refers to a reduction of the effective base-width caused by. (a) Electron-hole recombination at the base (b) The reverse biasing of the base-collector junction (c) The forward biasing of emitter-base junction (d) The early removal of stored base charge during saturation to cutoff switching. Solution : Due to Reverse bias of collector junction the depletion layer in base region increase & base width decreases (Ans) (Ans)
GATE - 2006
Two Marks Questions
31. In the circuit shown below, the switch was connected to position 1 at t < 0 and at t = 0, it is changed to position 2 Assume that the diode has zero voltage drop and a storage time t s. For 0 < t t s, VR is given by (all in Volts)
(a) VR = -5 (Ans) (b) VR = +5 (c) 0 VR < 5 (d) -5 < VR < 0 Solution : For diode forward biased and VR = 5. At t = 0 diode abruptly changes to reverse biased and current across resistor must be 0, but in storage time 0 < t < t s diode retain its resistance of forward biased. Thus for 0 < t < t s it will be on and VR = -5 V 32. The majority carriers in an n-type semiconductor have an average drift velocity v in a direction perpendicular to a uniform magnetic field B. The electric field E induced due to Hall
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effect acts in the direction. (a) v * B (Ans) (b) B * v (c) along V (d) opposite to V Solution : Force direction will charge, due to electron or hole, not induced electric field 33. Find the correct match between Group 1 and 2. Group 1 A. Varactor diode B. F-PIN diode C. G-Zener diode D. H-Schottky diode (a) A-4, B-2, C-1, D-3 (b) A-2, B-4, C-1, D-3 (c) A-3, B-4, C-1, D-2 (Ans) (d) A-1, B-3, C-2, D-4 Solution : The correct match is given below Group 2 1. Voltage reference 2. High frequency switch 3. Tuned circuits 4. Current controlled attenuator
Varactor diode F-PIN diode G-Zener diode H-Schottky diode
Tuned circuits Current controlled attenuator Voltage reference High frequency switch
34. A heavily doped n-type semiconductor has the following data. Hole - electron mobility ratio : 0.4 Doping concentration : 4.2 * 108 atoms/m3 Intrinsic concentration : 1.5 * 104 atoms/m3 The ratio of conductance of the n-type semiconductor to that of the intrinsic semiconductor of same material and at the same temperature is given by. (a) 0.00005 (b) 2,000 (c) 10,000 (d) 20,000 (Ans) Solution : sN-type / sintrinsic = ne e / nie + nih (h / e ) = 4.2 * 108 e / 1.5 * 104 e + 1.5 * 104 h = 20,000
GATE - 2007
One Mark Questions
35. The electron and hole concentrations in an intrinsic semiconductor are ni per cm3 at 300 K. Now, if acceptor impurities are introduced with a concentration of NA per cm3 (where NA >>ni), the electron concentration per cm3 at 300 K will be (a) ni (b) ni + NA (c) NA - ni (d) ni2 / NA (Ans) Solution : Intrinsic concentrations = ni / cm3 Acceptor (Hole) concentrations = NA / cm3 i.e. P NA Electron-concentrations n = ? According to mass action law, ni2 = n. . p Electron concentrations n = ni2 / P = ni2 / NA 36. In a P+ n junction diode under reverse biased, the magnitude of electric field is maximum at (a) The edge of the depletion region of the p-side (b) The edge of he depletion region on the n-side (c) The p+n junction (d) The centre of the depletion region on the n-side (Ans)
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Solution : When P+ n junction diode is reverse biased the magnitude of field is maximum at Junction of P+ n i.e. lightly doped side i.e. the centre of the depletion region on the n-side
GATE - 2007
Two Marks Questions
37. Group I Lists Four type of p-n junction diodes. Match each device in Group I with one of the options in Group II to indicate the bias condition of the device in its normal mode of operation
Group I A. Zener Diode B. Solar cell C. LASER diode D. Avalanche Photodiode

Codes : A (a) 1 (b) 2 (c) 2 (d) 2 B 2 1 2 1 C 1 1 1 2 D 2 2 (Ans) 1 2
Group II 1. Forward bias 2. Reverse bias
Solution : Zener diode operates in reverse bias Solar Cell Forward bias Laser diode Forward bias Reverse bias Avalanche Photodiode
38. Croup I List four different semiconductor devices. Match each device in Group I with its characteristic property in Group II
Group I A. BJT B. MOS capacitor C. LASER diode D. JFET

Codes : A (a) 3 (b) 1 (c) 3 (d) 3 BJT B 1 4 4 2 C 4 3 1 1 D 2 2 2 (Ans) 4
1. 2. 3. 4.
Group II Population inversion Pinch-off voltage Early effect Flat-band voltage
Solution : Early effect (base width modulation) MOS capacitor Flat-band voltage Laser diode Population inversion JFET Pinch-off voltage 39. A P+ n junction has a built-in potential of 0.8 V. The depletion layer width at a reverse bias of 1.2 V is 2 m. For a reverse bias of 7.2 V, the depletion layer width will be (a) 4 m (Ans) (b) 4.9 m (c) 8 m (d) 12 m Solution : P+ n junction built in volt = 0.8 V for applied 1.2 V reverse bias, width = 2 m Diode voltage = Va + Vb Where, Va = applied volt Vb = built in volt Also w Vdiode w1/w2 = V1/V2 w1 = 2 m, w2 = ? V1 = 1.2 + .8 = 2 V V2 = 7.2 + .8 = 8 V 2 * 10-6/ w2 = 2/8
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w2 = 4m
40. The DC current gain (b) of a BJT is 50. Assuming that the emitter injection efficiency is 0.995, the base transport factor is (a) 0.980 (b) 0.985 (c) 0.990 (d) 0.995 (Ans -d/b) Solution : DC current gain = b = 50 Emitter injection efficiency = 0.995 base transportation factor = ? Emitter efficiency = IPE / IETOT Base transportation factor, PT = IPC / IPE = Emitter efficiency * Base transportation factor bT = /0.995 = b/1 + b * 1 /0.0995 = 50 / 51 * 1 / 0.995 = 0.980 Common Date for Questions 41, 42, 43 The figure shows the high-frequency capacitance voltage (C-V) characteristic of a Metal/SiO2/silicon (MOS) capacitor having an area of 1 * 10-4 cm2. Assume that the permittivities (e0er) of silicon and SiO2 are 1 * 10-12 F/cm and 3.5 * 10-13 F/cm respectively.
41. The gate oxide thickness in the MOS capacitor is (a) 50 nm (Ans) (b) 143 nm (c) 350 nm (d) 1 m
C = e0erA / w w = 3.5 * 10-13 * 10-4 / 0.7 * 10-12 = 5 * 10-5 cm = 50 * 10-9 m = 50 nm 42. The maximum depletion layer width in silicon is (a) 0.143 m (b) 0.857 m (c) 1 m (Ans) (d) 1.143 m 43. Consider the following statements about the C-V characteristic plot : S1 : The MOS capacitor has an n-type substrate S2 : If positive charge are introduced in the oxide, the C-V plot will shift to the left The which of the following is true ? (a) Both S1 and S2 are true
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(b) S1 is True and S2 is false (c) S1 is false and S2 is true (d) Both S1 and S2 are false Previous Papers | Next Papers More Sample Papers GATE Company-Profile (Ans) s
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One Mark Questions

Two Marks Questions

Current gain Heavy doping

One Mark Questions

Two Marks Questions

One Mark Questions

Two Marks Questions

VGS = 3 - 1 = 2 VGS i.e. 4 > 1

VGS - Vth = 2 - 1 = 1 In present case : VDS >, So device is in saturation

One Mark Questions

Two Marks Questions

Varactor diode F-PIN diode G-Zener diode H-Schottky diode

One Mark Questions

Two Marks Questions

Group I A. Zener Diode B. Solar cell C. LASER diode D. Avalanche Photodiode

Group II 1. Forward bias 2. Reverse bias

Group I A. BJT B. MOS capacitor C. LASER diode D. JFET

Group II Population inversion Pinch-off voltage Early effect Flat-band voltage

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