FIU UPC Cooperation Agreement Projects developed by UPC students

Course: Analog Circuits Level: Fourth semester

Project: Experimental determination of internal parameters of a MOSFET.

Objectives: To analyze and determine the parameters of the MOSFET CMOS 4007 N channel - using a circuit with common source configuration. The parameters to be obtained are: Vt kn (W/L) rO VA Threshold voltaje CMOS transconductance W and L are physical dimensions AC output resistance Early voltage

Teamwork: 2 students Equipment and Components IC CMOS 4007 Resistance: 5W, 1/4W and 1/2W Capacitors Protoboards Signal generator: AC 100 mVpp sinusoidal wave Oscilloscope

Strategies to evaluate CMOS parameters Figure 1 shows a circuit with a MOSFET in common source configuration. Analyzing the circuit in DC, and applying the CMOS V-I law:

iD =

1 'W k n (vGS Vt ) 2 2 L

(1)

Applying the Kirchoff law in DC, the equation relating iD y vGS is given by:

RD i D + 2.5vGS = 15

(2)

It is important to assure the CMOS saturation (amplification) condition is satisfied: VGD < Vt y VGS > Vt

' It is required to find two different polarization states to find the experimental values of k n and Vt from equation (1).

For AC analysis, the mathematical model of the circuit will be used to determine the voltage gain considering CMOS parameters. The testing frequency was 10 KHz.

Figure 1. Circuit of MOSFET 4007N in common source configuration.

Using the oscilloscope, the experimental gain Av was determined and it is close to the theoretical value given by the following expression: AV = .99 gm (20K//rO) (3)

Using the va lue of Av , the experimental rO is determined. Finally, parameter VA (Early voltage) can be calculated from the following expressio n:

V A = rO * I D

(4)

Results: From the experimental tests in DC and solving equation (1) for two different polarization states, the following values were obtained:
' W k n ( ) exp 0.653mA / V 2 L Vt 0.98V

From the experimental tests in AC and using the polarization current ID = 0.38mA and VGS = 2.13V, the transconductance of CMOS was evaluated:

' g m = kn (

W )(VGS Vt ) = 0737 mA / V L

From oscilloscope measurements, it was found the voltage gain -12.76V/V . The input signal was 100mVpp (oscilloscope channel 1) The output signal was 1.28Vpp (oscilloscope channel 2) From equation (3), the value of rO was found to be 131.57 K From equation (4) the Early voltage VA is 50V which is a typical value for this type of CMOS verifying the validity of the experimental results.

Conclusions It was illustrative to experimentally determine the internal parameters of CMOS, considering that this type of information usually does not appear in components catalogs and manuals. The experimental analysis of electronic components allows a better understanding of their characteristics and properties to formulate well approximated theoretical models. The validity of the model was experimentally verified.
3

The project was useful for a better understanding and application of the basic electrical laws governing electronic components.