Siksha O Anusandhan University

INSTITUTE OF TECHNICAL EDUCATION AND RESEARCH

Assignment (4th Sem ECE-B & E)

Subject: Semiconductor Device

Date of submission: On or before 03.04.2013 (5.15PM) Room: N-307

1. 2. 3. 4. 5. 6. Derive the equation for thermal equilibrium concentration of electrons (n0) for intrinsic semiconductor assuming Boltzmann approximation. Derive an equation for n0 and p0 for a compensated semiconductor using charge neutrality. Fermi energy level for intrinsic semiconductor. How the depends on impurity concentration and temperature? Write appropriate mathematical expressions. Also plot graphs for the same Discus velocity saturation. What do you mean by graded impurity distribution in a semiconductor? Derive an expression for the induced electric field for this type of semiconductor. Hence establish a relationship (Einstein relation) between mobility and diffusion coefficient. A semiconductor sample is incident with high energy photons. Show that the excess electron and hole concentration at any instant at low level injection is given by n(t) n(0) its usual meaning. 8. 9. Derive the equation of continuity. Derive time dependent diffusion equations for homogeneous semiconductors.
t

7.

n0

. The symbols have

10. Two semiconductor materials have exactly the same properties except that material S1 has a band gap energy of 1.0 eV and material S2 has a bandgap energy 1.2eV. Determine the ratio of intrinsic carrier concentration (ni) of the 1st material to the 2nd material at T = 300 K. Given that

kT 300K

0.0259 eV.

11. A semiconductor material has electron and hole mobility n and p respectively. When the conductivity is considered as a function of the hole concentration p 0 Show that the minimum value of conductivity, min, is obtained for the hole concentration of p 0

= ni n / p

, where ni is the intrinsic carrier concentration.

12. Determine the values of n0 and p0 for Silicon at T = 300 K if the Fermi energy is 0.22 eV above the valence band energy.

N C = 2.8 1019 cm -3 N V = 1.04 1019 cm -3 and n i = 1.5 1010 cm-3

13. Derive the expression for: (i) electric field (ii) potential in a pn junction. Plot the results. 14. For a silicon pn junction, Na= 2x1015cm-3, Nd= 3x1016cm-3. Find Xn, Xp, W, Emax under (i) zero bias (ii) with Vr =5V. Also find the junction capacitance. s= 11.7x8.85x10-14F/cm. 15. Derive the (i) relation for the minority charge concentration variation in the neutral regions (ii) the ideal current voltage relation ship for a pn-junction diode in forward bias. 16. For the above (Q. 14) semiconductor under V a = 0.753V, find the (i) minority charge density at the space charge edges (ii) total current if, Dp=Dn=25cm2/s, no= po = 1s. Plot the variation of current in the log scale.