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2N4403

Preferred Device

General Purpose Transistors


PNP Silicon
Features http://onsemi.com

PbFree Packages are Available*


COLLECTOR 3 2 BASE Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 40 40 5.0 600 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C W mW/C C TO92 CASE 29 STYLE 1 12 1 1 EMITTER

MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, JunctiontoAmbient Thermal Resistance, JunctiontoCase Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W

3 STRAIGHT LEAD BULK PACK

3 BENT LEAD TAPE & REEL AMMO PACK

MARKING DIAGRAM

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

2N 4403 AYWW G G

2N4403 = Device Code A = Assembly Location Y = Year WW = Work Week G = PbFree Package (Note: Microdot may be in either location)

ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.

*For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2007

Preferred devices are recommended choices for future use and best overall value.

March, 2007 Rev. 3

Publication Order Number: 2N4403/D

2N4403
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 1) CollectorBase Breakdown Voltage EmitterBase Breakdown Voltage Base Cutoff Current Collector Cutoff Current ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 150 mAdc, VCE = 2.0 Vdc) (Note 1) (IC = 500 mAdc, VCE = 2.0 Vdc) (Note 1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) hFE 30 60 100 100 20 0.75 300 0.4 0.75 0.95 1.3 (IC = 1.0 mAdc, IB = 0) (IC = 0.1 mAdc, IE = 0) (IE = 0.1 mAdc, IC = 0) (VCE = 35 Vdc, VEB = 0.4 Vdc) (VCE = 35 Vdc, VEB = 0.4 Vdc) V(BR)CEO V(BR)CBO V(BR)EBO IBEV ICEX 40 40 5.0 0.1 0.1 Vdc Vdc Vdc mAdc mAdc Symbol Min Max Unit

CollectorEmitter Saturation Voltage (Note 1) BaseEmitter Saturation Voltage (Note 1) SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product CollectorBase Capacitance EmitterBase Capacitance Input Impedance Voltage Feedback Ratio SmallSignal Current Gain Output Admittance SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time

VCE(sat) VBE(sat)

Vdc Vdc

(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

fT Ccb Ceb hie hre hfe hoe

200 1.5 k 0.1 60 1.0

8.5 30 15 k 8.0 500 100

MHz pF pF W X 104 mmhos

(VCC = 30 Vdc, VBE = + 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) (VCC = 30 Vdc, IC = 150 mAdc, IB1 = 15 mA, IB2 = 15 mA)

td tr ts tf

15 20 225 30

ns ns ns ns

1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.

ORDERING INFORMATION
Device 2N4403 2N4403G 2N4403RLRA 2N4403RLRAG 2N4403RLRM 2N4403RLRMG 2N4403RLRPG Package TO92 TO92 (PbFree) TO92 TO92 (PbFree) TO92 TO92 (PbFree) TO92 (PbFree) Shipping 5000 Units / Bulk 5000 Units / Bulk 2000 / Tape & Reel 2000 / Tape & Reel 2000 / Ammo Pack 2000 / Ammo Pack 2000 / Ammo Pack

For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

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2N4403
SWITCHING TIME EQUIVALENT TEST CIRCUIT
30 V < 2 ns +2 V 0 16 V 1.0 kW 10 to 100 ms, DUTY CYCLE = 2% CS* < 10 pF 200 W +14 V 0 16 V < 20 ns 1.0 kW 1.0 to 100 ms, DUTY CYCLE = 2% 30 V 200 W

CS* < 10 pF

+4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope

Figure 1. TurnOn Time

Figure 2. TurnOff Time

TRANSIENT CHARACTERISTICS
25C 30 20 CAPACITANCE (pF) Ceb Q, CHARGE (nC) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 2.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 20 30 0.1 10 20 100C

VCC = 30 V IC/IB = 10

10 7.0 5.0 Ccb

QT QA

30 50 70 100 200 IC, COLLECTOR CURRENT (mA)

300

500

Figure 3. Capacitances

Figure 4. Charge Data

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2N4403
100 70 50 t, TIME (ns) 30 20 t r , RISE TIME (ns) tr @ VCC = 30 V tr @ VCC = 10 V td @ VBE(off) = 2 V td @ VBE(off) = 0 IC/IB = 10 100 70 50 30 20 VCC = 30 V IC/IB = 10

10 7.0 5.0 10 20 30 50 70 100 200 300 500

10 7.0 5.0 10 20 30 50 70 100 200 300 500

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 5. TurnOn Time

Figure 6. Rise Time

200 IC/IB = 10 t s, STORAGE TIME (ns) 100 70 50 IB1 = IB2 ts = ts 1/8 tf 30 20 IC/IB = 20

10

20

30

50

70

100

200

300

500

IC, COLLECTOR CURRENT (mA)

Figure 7. Storage Time

SMALLSIGNAL CHARACTERISTICS
NOISE FIGURE VCE = 10 Vdc, TA = 25C; Bandwidth = 1.0 Hz
10 8 NF, NOISE FIGURE (dB) IC = 1.0 mA, RS = 430 W IC = 500 mA, RS = 560 W IC = 50 mA, RS = 2.7 kW IC = 100 mA, RS = 1.6 kW NF, NOISE FIGURE (dB) 10 f = 1 kHz 8

6 4 2

IC = 50 mA 100 mA 500 mA 1.0 mA

RS = OPTIMUM SOURCE RESISTANCE

2 0

0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 f, FREQUENCY (kHz)

10

20

50

100

50

100

200

500 1 k 2 k 5 k 10 k 20 k RS, SOURCE RESISTANCE (OHMS)

50 k

Figure 8. Frequency Effects

Figure 9. Source Resistance Effects

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2N4403
h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25C

This group of graphs illustrates the relationship between hfe and other h parameters for this series of transistors. To obtain these curves, a highgain and a lowgain unit were
1000 700 500 hfe , CURRENT GAIN 300 200 2N4403 UNIT 1 2N4403 UNIT 2

selected from the 2N4403 lines, and the same units were used to develop the correspondinglynumbered curves on each graph.
100 k hie , INPUT IMPEDANCE (OHMS) 50 k 20 k 10 k 5k 2k 1k 500 200 2N4403 UNIT 1 2N4403 UNIT 2

100 70 50 30

0.1

0.2

0.3

0.5 0.7 1.0

2.0

3.0

5.0 7.0 10

100

0.1

0.2

0.3

0.5 0.7 1.0

2.0

3.0

5.0 7.0

10

IC, COLLECTOR CURRENT (mAdc)

IC, COLLECTOR CURRENT (mAdc)

Figure 10. Current Gain


20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 2N4403 UNIT 1 2N4403 UNIT 2 m mhos) hoe , OUTPUT ADMITTANCE ( 500

Figure 11. Input Impedance

h re , VOLTAGE FEEDBACK RATIO (X 104 )

100 50 20 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 2N4403 UNIT 1 2N4403 UNIT 2 10

IC, COLLECTOR CURRENT (mAdc)

IC, COLLECTOR CURRENT (mAdc)

Figure 12. Voltage Feedback Ratio

Figure 13. Output Admittance

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2N4403
STATIC CHARACTERISTICS
3.0 h FE , NORMALIZED CURRENT GAIN 2.0 VCE = 1.0 V VCE = 10 V TJ = 125C 25C 1.0 0.7 0.5 0.3 0.2 0.1 55 C

0.2

0.3

0.5

0.7

1.0

2.0

3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA)

30

50

70

100

200

300

500

Figure 14. DC Current Gain


VCE , COLLECTOREMITTER VOLTAGE (VOLTS) 1.0 0.8

0.6

IC = 1.0 mA

10 mA

100 mA

500 mA

0.4

0.2

0 0.005

0.01

0.02

0.03

0.05 0.07 0.1

0.2

0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA)

2.0

3.0

5.0

7.0

10

20

30

50

Figure 15. Collector Saturation Region


1.0 0.8 VOLTAGE (VOLTS) 0.5 0 COEFFICIENT (mV/ C) 0.5 1.0 1.5 2.0 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500 2.5 0.1 0.2 0.5 1.0 2.0 qVS for VBE qVC for VCE(sat)

TJ = 25C VBE(sat) @ IC/IB = 10 VBE(sat) @ VCE = 10 V

0.6

0.4

0.2

5.0

10

20

50 100 200

500

IC, COLLECTOR CURRENT (mA)

Figure 16. On Voltages

Figure 17. Temperature Coefficients

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2N4403
PACKAGE DIMENSIONS

TO92 (TO226) CASE 2911 ISSUE AM


A R P L
SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 0.250 0.080 0.105 0.100 0.115 0.135 MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 6.35 2.04 2.66 2.54 2.93 3.43

STRAIGHT LEAD BULK PACK

X X G H V
1

D J C SECTION XX N N

BENT LEAD TAPE & REEL AMMO PACK

P T
SEATING PLANE

NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 2.04 2.66 1.50 4.00 2.93 3.43 STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR

X X G

D J V C SECTION XX N

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION


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2N4403/D