SS8550

SS8550
2W Output Amplifier of Portable Radios in Class B Push-pull Operation.
Complimentary to SS8050 Collector Current: IC=1.5A Collector Power Dissipation: PC=2W (TC=25C)
1

TO-92

1. Emitter 2. Base 3. Collector

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -40 -25 -6 -1.5 1 150 -65 ~ 150 Units V V V A W C C

Electrical Characteristics Ta=25C unless otherwise noted

Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE (sat) VBE (sat) VBE (on) Cob fT Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC= -100A, IE=0 IC= -2mA, IB=0 IE= -100A, IC=0 VCB= -35V, IE=0 VEB= -6V, IC=0 VCE= -1V, IC= -5mA VCE= -1V, IC= -100mA VCE= -1V, IC= -800mA IC= -800mA, IB= -80mA IC= -800mA, IB= -80mA VCE= -1V, IC= -10mA VCB= -10V, IE=0 f=1MHz VCE= -10V, IC= -50mA 100 45 85 40 170 160 80 -0.28 -0.98 -0.66 15 200 Min. -40 -25 -6 -100 -100 300 -0.5 -1.2 -1.0 V V V pF MHz Typ. Max. Units V V V nA nA

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter on Voltage Output Capacitance Current Gain Bandwidth Product

hFEClassification
Classification hFE2 B 85 ~ 160 C 120 ~ 200 D 160 ~ 300

2001 Fairchild Semiconductor Corporation

Rev. A1, July 2001

SS8550

Typical Characteristics

-0.5

1000

VCE = -1V IB=-4.0mA

IC[mA], COLLECTOR CURRENT

-0.4

IB=-3.5mA IB=-3.0mA

hFE, DC CURRENT GAIN

100

-0.3

IB=-2.5mA IB=-2.0mA

-0.2

IB=-1.5mA IB=-1.0mA

10

-0.1

IB=-0.5mA
-0.4 -0.8 -1.2 -1.6 -2.0
1 -0.1 -1 -10 -100 -1000

VCE[V], COLLECTOR-EMITTER VOLTAGE

IC[mA], COLLECTOR CURRENT

Figure 1. Static Characteristic

Figure 2. DC current Gain

-10000

-100

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

IC=10IB

VCE = -1V

-1000

IC[mA], COLLECTOR CURRENT

-100 -1000

-10

VBE(sat)

-100

-1

VCE(sat)

-10 -0.1

-1

-10

-0.1 -0.0

-0.2

-0.4

-0.6

-0.8

-1.0

-1.2

IC[mA], COLLECTOR CURRENT

VBE[V], BASE-EMITTER VOLTAGE

Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage

Figure 4. Base-Emitter On Voltage

100

fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT

1000

f=1MHz IE=0

VCE=-10V

Cob[pF], CAPACITANCE

10

100

1 -1 -10 -100 -1000

10 -1 -10 -100 -1000

VCB[V], COLLECTOR-BASE VOLTAGE

IC[mA], COLLECTOR CURRENT

Figure 5. Collector Output Capacitance

Figure 6. Current Gain Bandwidth Product

2001 Fairchild Semiconductor Corporation

Rev. A1, July 2001

SS8550

Package Demensions

TO-92
4.58 0.15
+0.25

0.46

14.47 0.40

0.10

4.58 0.20

1.27TYP [1.27 0.20] 3.60

0.20

1.27TYP [1.27 0.20]

0.38 0.05

+0.10

3.86MAX

1.02 0.10

0.38 0.05

+0.10

(R2.29)

(0.25)

Dimensions in Millimeters
2001 Fairchild Semiconductor Corporation Rev. A1, July 2001

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER FAST OPTOPLANAR

ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E2CMOS EnSigna FACT FACT Quiet Series

FASTr FRFET GlobalOptoisolator GTO HiSeC ISOPLANAR LittleFET MicroFET MICROWIRE OPTOLOGIC

PACMAN POP Power247 PowerTrench QFET QS QT Optoelectronics Quiet Series SLIENT SWITCHER SMART START

Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TruTranslation TinyLogic UHC UltraFET VCX

STAR*POWER is used under license

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

2001 Fairchild Semiconductor Corporation

Rev. H3

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.