IRF650B / IRFS650B

IRF650B / IRFS650B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.

Features
28A, 200V, RDS(on) = 0.085 @VGS = 10 V Low gate charge ( typical 95 nC) Low Crss ( typical 75 pF) Fast switching 100% avalanche tested Improved dv/dt capability

G G DS

TO-220
IRF Series

GD S

TO-220F
IRFS Series

Absolute Maximum Ratings

Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL

TC = 25C unless otherwise noted

Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) Drain Current - Pulsed
(Note 1)

IRF650B 200 28 17.7 112 30

(Note 2) (Note 1) (Note 1) (Note 3)

IRFS650B 28 * 17.7 * 112 600 28 15.6 5.5

Units V A A A V mJ A mJ V/ns W W/C C C

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C)

- Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

156 1.25 -55 to +150 300

50 0.4

* Drain current limited by maximum junction temperature.

Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction-to-Case Max. Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient Max IRF650B 0.8 0.5 62.5 IRFS650B 2.51 -62.5 Units C/W C/W C/W

2002 Fairchild Semiconductor Corporation

Rev. A1, December 2002

IRF650B / IRFS650B

Electrical Characteristics
Symbol Parameter

TC = 25C unless otherwise noted

Test Conditions

Min

Typ

Max

Units

Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 200 V, VGS = 0 V VDS = 160 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 200 ------0.2 ------10 100 100 -100 V V/C A A nA nA

On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A VGS = 10 V, ID = 14 A VDS = 40 V, ID = 14 A
(Note 4)

2.0 ---

-0.071 25

4.0 0.085 --

V S

Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---2600 330 75 3400 430 100 pF pF pF

Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 160 V, ID = 32 A, VGS = 10 V
(Note 4, 5)

VDD = 100 V, ID = 32 A, RG = 25
(Note 4, 5)

--------

30 240 295 195 95 13 43

70 490 600 400 123 ---

ns ns ns ns nC nC nC

Drain-Source Diode Characteristics and Maximum Ratings

IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 28 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 32 A, dIF / dt = 100 A/s
(Note 4)

------

---220 1.89

28 112 1.5 ---

A A V ns C

Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 1.15mH, IAS = 28A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 32A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature

2002 Fairchild Semiconductor Corporation

Rev. A1, December 2002

IRF650B / IRFS650B

Typical Characteristics

10

ID, Drain Current [A]

ID, Drain Current [A]

VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V Top :

10

10

150 C 25 C
10
0

10

-55 C
Notes : 1. VDS = 40V 2. 250 s Pulse Test

Notes : 1. 250 s Pulse Test 2. TC = 25

10 -1 10

10 10
0

-1

10

10

VDS, Drain-Source Voltage [V]

VGS, Gate-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

0.4

10

RDS(ON) [ ], Drain-Source On-Resistance

0.2

VGS = 20V

IDR, Reverse Drain Current [A]

0.3

VGS = 10V

10

150 25
Notes : 1. VGS = 0V 2. 250 s Pulse Test
0

0.1

Note : TJ = 25

0.0 0 30 60 90 120

10

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

ID, Drain Current [A]

VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature

8000

Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd

12

VDS = 40V
10

6000

VDS = 100V

VGS , Gate-Source Voltage [V]

VDS = 160V

Capacitance [pF]

Ciss
4000

Coss Crss
Notes : 1. VGS = 0 V 2. f = 1 MHz

2000

2
Note : ID = 32 A

0 -1 10

0 10
0

10

20

40

60

80

100

VDS, Drain-Source Voltage [V]

QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

2002 Fairchild Semiconductor Corporation

Rev. A1, December 2002

IRF650B / IRFS650B

Typical Characteristics

(Continued)

1.2

3.0

2.5

BV DSS , (Normalized) Drain-Source Breakdown Voltage

RDS(ON) , (Normalized) Drain-Source On-Resistance

1.1

2.0

1.0

1.5

1.0

0.9

Notes : 1. VGS = 0 V 2. ID = 250 A

0.5

Notes : 1. VGS = 10 V 2. ID = 16 A

0.8 -100

-50

50

100
o

150

200

0.0 -100

-50

50

100
o

150

200

TJ, Junction Temperature [ C]

TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation vs Temperature

Figure 8. On-Resistance Variation vs Temperature

10
Operation in This Area is Limited by R DS(on)

Operation in This Area is Limited by R DS(on)

10

ID, Drain Current [A]

100 s 1 ms
10
1

10 s

10

100 s 1 ms 10 ms

ID, Drain Current [A]

10 ms DC

10

100 ms DC

10

10

Notes : 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse

o

Notes :

10

-1

1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse

10

-1

10

10

10

10

-2

10

10

10

VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V]

Figure 9-1. Maximum Safe Operating Area for IRF650B

Figure 9-2. Maximum Safe Operating Area for IRFS650B

30

25

ID, Drain Current [A]

20

15

10

0 25

50

75

100

125

150

TC, Case Temperature []

Figure 10. Maximum Drain Current vs Case Temperature

2002 Fairchild Semiconductor Corporation

Rev. A1, December 2002

IRF650B / IRFS650B

Typical Characteristics

(Continued)

(t), T h e r m a l R e s p o n s e

10

D = 0 .5 0 .2
10
-1

N o te s : 1 . Z J C (t) = 0 .8 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t)

0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e

PDM t1 t2

JC

10

-2

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

Figure 11. Transient Thermal Response Curve for IRF650B

(t), T h e rm a l R e s p o n s e

10

D = 0 .5 0 .2 0 .1 0 .0 5

N o te s : 1 . Z J C (t) = 2 .5 1 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t)

10

-1

0 .0 2 0 .0 1 s in g le p u ls e
10
-2

PDM t1 t2

JC

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

Figure 11. Transient Thermal Response Curve for IRFS650B

2002 Fairchild Semiconductor Corporation

Rev. A1, December 2002

IRF650B / IRFS650B

Gate Charge Test Circuit & Waveform

50K 12V 200nF 300nF

Same Type as DUT VDS

VGS Qg 10V Qgs Qgd

VGS

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

VDS VGS RG

RL VDD

VDS

90%

10V

DUT

VGS

10%

td(on) t on

tr

td(off) t off

tf

Unclamped Inductive Switching Test Circuit & Waveforms

L VDS ID RG DUT
tp

BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD VDD
tp

ID (t) VDS (t) Time

10V

2002 Fairchild Semiconductor Corporation

Rev. A1, December 2002

IRF650B / IRFS650B

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

+ VDS _

I SD L Driver RG
Same Type as DUT

VDD

VGS

dv/dt controlled by RG ISD controlled by pulse period

VGS ( Driver )

Gate Pulse Width D = -------------------------Gate Pulse Period

10V

IFM , Body Diode Forward Current

I SD ( DUT ) IRM

di/dt

Body Diode Reverse Current

VDS ( DUT )

Body Diode Recovery dv/dt

VSD

VDD

Body Diode Forward Voltage Drop

2002 Fairchild Semiconductor Corporation

Rev. A1, December 2002

IRF650B / IRFS650B

Package Dimensions

TO-220
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) 3.60 0.10 (1.70) 4.50 0.20

1.30 0.05

+0.10

9.20 0.20

(1.46)

13.08 0.20

(1.00)

(3.00)

15.90 0.20

1.27 0.10

1.52 0.10

0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]

10.08 0.30

18.95MAX.

(3.70)

(45 )
0.50 0.05
+0.10

2.40 0.20

10.00 0.20

Dimensions in Millimeters
2002 Fairchild Semiconductor Corporation Rev. A1, December 2002

IRF650B / IRFS650B

Package Dimensions

(Continued)

TO-220F
3.30 0.10 10.16 0.20 (7.00) 3.18 0.10 2.54 0.20 (0.70)

6.68 0.20

15.80 0.20

(1.00x45)

MAX1.47 9.75 0.30 0.80 0.10

(3 ) 0

0.35 0.10 2.54TYP [2.54 0.20]

#1 0.50 0.05 2.54TYP [2.54 0.20] 4.70 0.20

+0.10

2.76 0.20

9.40 0.20

Dimensions in Millimeters
2002 Fairchild Semiconductor Corporation Rev. A1, December 2002

15.87 0.20

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PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

2002 Fairchild Semiconductor Corporation

Rev. I1

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