NANYANG TECHNOLOGICAL UNIVERSITY School of Materials Science & Engineering

MS 3002 Advanced Materials Processing

ATHENA Process Simulation Assignment

Name: Chee Siaw Soon Matric No.: 072614D07 Tutorial Group: 1 Submitted to: Prof. Gan Chee Lip

Assignment: (Ion Implantation) 1. Modify the example code to obtain a junction depth of 0.800 0.001 m with the following parameters. Use your matriculation number (e.g. 123456A78) for the various inputs. a) Implant material and background dopant: (3rd and 4th digits of matric no.) Number Implant material Background dopant 08 99 B As b) Background dopant concentration: (5th and 6th digits of matric no.) e.g. 14 x 1013 cm3 You can vary the implant dose and energy, diffusion time and temperature to get the desired junction depth. Show the conditions simulated which allow you to obtain a junction depth of 0.8m. Explain if the conditions that you have obtained are practical in actual manufacturing conditions.

The following table shows the simulation condition. 1 2 3 4 5 6 Parameters Implant material Background dopant Energy Diffusion time Temperature Junction depth Value Boron, amount = 1.6x1014 cm 2 Arsenic, amount = 1.4x1014 cm 3 70 keV 36 mins 1000 C 0.80071m

In actual manufacturing practice, diffusion equipment with high temperature system which also used for thermal annealing and oxidation processes is capable to heat up wafers up to temperatures of 800-1100C. To prevent any severe thermal shocks which will lead to wafer warpage and slip, the wafers are stabilize at loading temperature around 750C - 800C as to ensure repeatable thermal cycles and slowly heat up to the final temperature of 1000C-1100C. Hence, I have decided to operate at temperature of 1000 C as it is more effective due to diffusivity will increase exponentially when temperature increase. Ion implantation able to provide very precise number of dopant atoms into silicon and hence numbers of dopant atoms ranging from 1x1012 cm-2 to 1x1016cm-2 are routinely introduced during the fabrication of a MOS device. Either lower or even

higher doses are also possible to be introduced. I have changed the implant concentration to 1.6x1014 cm 2 and diffusion time to 36 minutes. This is because at high operating temperature of 1000 C, if the amount of background dopant is a lot greater than the implant materials, the doped Si will behave intrinsically. Therefore, I have adjusted the amount of implant dose to a higher amount as to prevent the doped Si behaves intrinsically. However, it is not practical to increase the temperature as it is costly due to high energy consumption and also will cause the doped Si behaves intrinsically as mentioned above. However, it is more practical to increase the diffusion time as it scales according to DT1/2. Slightly increase the diffusion time will increase the junction depth more significantly. However, we cannot increase only the diffusion time as a longer diffusion time will lead to low productivity of a process. In order to achieve an optimal economic efficiency, 20 to 70 minutes is usually used in actual manufacturing practice. A range of 30keV to 200keV is usually applied for singly ionized species and the upper energy limit is determined by breakdown in systems with air insulation. This has lead to practical limits on the depth that dopant atoms can be introduced to the silicon but any higher energy will cause lattice damage to the wafer. 2. Calculate the junction depth with the final parameters that you have decided by using the equations that you have learnt in lecture, and compare this junction depth with the one simulated. Comment on any differences. Implant material is Boron, Do = 1.0cm2S-1 Ea = 3.5 eV D = Do exp Ea/kT = 1 exp (-3.5/(8.617x10-5)(1273) = 1.39 x 10-14 cm2/sec
(x Rp )2 exp 2 R Dt 2 ( 2 + 2 ( Rp 2 + 2 Dt ) p Q

C ( x, t ) =

Table1:RangeandStraggleofPhosphorous,Arsenic,AntimonyandBoron

1 2 3 4 5 6 7

Parameters Implant material Background dopant Energy Diffusion time Temperature Rp , Range Rp, Standard Deviation

Value Boron, amount = 1.6x1014 cm 2 Arsenic, amount = 1.4x1014 cm 3 70 keV 36 mins 1000 C 0.223 m 0.0736 m

(x R )2 p C ( x, t ) = exp 2 2( R p + 2 Dt 2 ( Rp 2 + 2 Dt ) (x R )2 C ( x, t ) 2 ( Rp 2 + 2 Dt ) p ln = 2 Q 2(R p + 2 Dt Q ln C ( x, t ) 2 ( Rp 2 + 2 Dt ) 2( R 2 + 2 Dt ) = ( x R ) 2 p p Q
1.4 1014 2 [(7.36 10 6 ) 2 + 2 (1.39 x 10 - 14 )(36 60) ] {2[(7.36 10 6 ) 2 + 2(1.39 x 10 - 14 )(36 60)]} 14 1.6 10

ln

= ( x 22.3 10 6 ) 2

= 7.2 10 5 cm = 0.72 m

% Difference =

0.80071 - 0.72000 x100% = 10.08% 0.80071

Discrepancy of 10.08% is calculated where the calculated junction depth is shallower than the simulated junction depth. Ion implantation is a random process as each ion follows a random trajectory with a range R. Equation used to calculate the junction depth is based on a Gaussian description of a 2D implant profile where the complex distribution functions is not taken into account. In addition, ion implantation and diffusion equation used in calculation have neglected the Transient Enhanced Diffusion as this process is always used to anneal implant damage and restore the lattice damage to its crystalline perfection. Thus, the calculated junction depth is shallower or lesser than the simulated junction depth.

3. Explain with plots how the junction depth may vary with each of the following parameters: a) Diffusion time Diffusion Time (min) 10 20 30 40 50 Junction Depth (m) 0.616 0.658 0.695 0.730 0.762 Diffusion Time (min) 60 70 80 90 100 Junction Depth (m) 0.792 0.821 0.848 0.874 0.899

From the graph above, junction depth increase as diffusion time increase. This is because dopants are able to diffuse further into the silicon substrate and form a deeper junction depth. In addition, equation = Dt showed the relationship between diffusion length which scales with time as Dt , as time increase diffusion length increase. b) Diffusion temperature Diffusion Temperature (C) 800 900 950 1000 Junction Depth (m) 0.569 0.581 0.615 0.717 Diffusion Temperature (C) 1050 1100 1150 1200 Junction Depth (m) 0.946 1.370 2.05 3.08

The graph above shows that at temperature below 900C, junction depth does not increase significantly. This is because the dopants vibrating at their own site due to the reason that they do not have sufficient energy to overcome the energy barrier. From 900C onwards, the junction depth increase as diffusion temperature increase. This is because the diffusivity D is a thermally activated and follow the Arrhenius behaviour, D = D 0 exp( Ea ) . When temperature increases, atoms vibrate at a faster kT

rate and gain more energy to diffuse deeper into the substrate. Therefore,

temperature increase lead to diffusivity increase exponentially which will also cause junction depth increase exponentially. c) Implant dose Implant Dose (cm3) 1.00E+11 1.00E+12 1.00E+13 1.00E+14 1.00E+15 Junction Depth (m) 0.497 0.580 0.648 0.706 0.757 Implant Dose (cm3) 1.00E+16 1.00E+17 1.00E+18 1.00E+19 1.00E+20 Junction Depth (m) 0.804 0.848 0.889 0.927 0.964

Initially, the junction depth increases more significantly and increases less significantly after passing a critical dose. This is due to initial dose allowed more dopants to diffuse into the substrate but crystal becomes amorphous and loss all long range order due to higher dose. The arrangement of the lattice atoms is random and damage accumulation has saturated which leads to ions are not able to diffuse deeper into the substrate. Thus, a lower rate of junction depth formation when implant dose increase. Therefore, the junction depth is expected to increase slower at higher implant doses and eventually less affected by dose concentration.

d) Implant energy Implant Energy (keV) 20 30 40 50 60 70 80 Junction Depth (m) 0.486 0.539 0.587 0.633 0.676 0.717 0.755 Implant Energy (keV) 90 100 120 140 160 180 200 Junction Depth (m) 0.792 0.828 0.894 0.957 1.01 1.07 1.12

From the graph above, it shows that the junction depth increases when implant energy increases. The higher the implant energy, the more the dopants allowed to penetrate deeper into the Si substrate. Besides that, projected range Rp depends on the energy of the implant. The higher the implant energy, the deeper the range is and hence the deeper the junction depth formed. However, nuclear and electronic stopping give rise to total energy loss during an ion trajectory. For nuclear stopping, nuclear energy loss is small at very high energies as fast particles have less interaction time with scattering nucleus and hence they travel further. For electronic stopping, the viscosity caused by the sea of electrons from the target lattice and local electronic environment around the lattice atoms will retard to movement of the ions.

Assignment: (Oxidation) 4. Modify the example code to obtain an oxide thickness of 0.100 0.001 m with the following parameters. Use your matriculation number (e.g. 123456A78) for the various inputs. a) Oxidation conditions: (6th digit of matric no.) Digit Orientation Oxidant 4 or 5 (111) Dry O2 You can vary the oxidation time and temperature to get the desired oxide thickness. Show the conditions simulated which allow you to obtain an oxide thickness of 0.1 m. Explain if the conditions that you have obtained are practical in actual manufacturing conditions.

1 2 3 4 5

Parameters Orientation Oxidant Oxidation time Temperature Oxide thickness

Value 111 Dry O2 24 mins 1100C 0.0998 m

An oxidation system is capable to operate from 600C to 1200C and hence operating temperature 1100C chosen is within the acceptable range. Oxidant used is dry O2 which usually has a slower growth rate but able to produce a higher quality oxidation film for gate electronic application.

From the equation above, the junction depth is strongly dependent on the growth time. In addition, parabolic constant B=2DC*/N, the junction depth also influenced by this parameter as diffusivity increase exponentially as temperature increase and hence junction depth increase. Therefore, it is more efficient and productive to increase the temperature with a shorter oxidation time. However, it will be low productivity if you choose a longer oxidation time but lower oxidation temperature.

5. Calculate the oxide thickness with the final parameters that you have decided by using the equations that you have learnt in lecture, and compare this oxide thickness with the one simulated. Comment on any differences.
X0 = A t + 1 1+ 2 A / 4B 2

B = C1 exp(

E1 ) kT 1.23eV ) 8.617 x10 eV / K 1373K

5

B = 7.72 x10 2 m 2 hr 1 exp( B = 0.024m 2 hr 1

E B = C 2 exp( 2 ) A kt 2.0eV B = 6.23 x10 6 mhr 1 exp( ) 5 A 8.617 x10 eV / K 1373K B = 0.284mhr 1 A
0.024 m 2 hr 1 0.284 mhr 1 A = 0.085m A=

xi + Axi ; xi = 0.002m B (0.002) 2 + (0.085)(0.002) = 0.024 = 0.00725hr = 26.1sec

2

X0 =

A t + 1 1+ 2 2 A / 4B 0.085 0.4 + 0.00725 Xo = 1 1+ 2 0.085 2 / 4(0.024) X o = 0.065m

The calculated oxidation depth is found less than the simulated junction depth. This may due to parallel oxidation of O2 and O atoms which some incomplete O atoms will form. Besides, limitations brought by Deal Grove Model as in this case, the high operating temperature (1100C) will cause the dopants to diffuse and affect the original design of PN structure which will eventually affect the oxidation depth. This phenomenon indicated that the Deal Grove Model cannot explain how oxidation affects dopants diffusion. The Deal Grove Model also cannot explain effects in mixed ambient, thin oxide growth which less than 20nm and oxidation of shaped surfaces.

6. Explain with plots how the oxide thickness may vary with each of the following parameters: a) Oxidation time Oxidation Time (min) 10 20 30 40 50 60 70 80 Oxide Thickness (m) 0.0348 0.0574 0.0757 0.0916 0.1058 0.1187 0.1306 0.1418 Oxidation Time (min) 90 100 150 200 250 300 350 400 Oxide Thickness (m) 0.1524 0.1624 0.2065 0.2438 0.2768 0.3068 0.3343 0.3600

Graph above shows that oxidation thickness increase as time increase. Oxide thickness will grow linearly at the oxidation time before 20 minutes and grow in parabolic profile after that. The linear growth profile indicated that at this time many complex steps of reaction involved such as Si-Si bond breaking and Si-O bond formation. However, parabolic growth profile dominates after a longer oxidation time as large thickness of oxide formed where diffusion across the oxide is rate limiting. The longer the diffusion time, the further the oxidant can diffuse into the oxide formed and react at the interface to form oxide layer.

d) Oxidation temperature Oxidation Temperature (min) 800 900 1000 1100 Oxide Thickness (m) 0.039 0.046 0.066 0.098 Oxidation Temperature (min) 1200 1300 1400 1500 Oxide Thickness (m) 0.138 0.188 0.247 0.314

Graph above shows that the oxidation thickness increase with increasing oxidation temperature. This is because both the parabolic rate constant and linear rate constant have Arrhenius behaviour where both their value increase exponentially with increasing temperature. Besides, the parabolic rate constant also has a dependence on diffusivity as B=2DC*/N. Diffusivity D is a thermally activated and also follow the Arrhenius behaviour. When temperature increases, diffusivity of oxidant increases lead to increase in growth rate and hence a thicker oxide film formed.

Reference James D.Plummer, Michael D.Deal, Peter B.Griffin, Silicon VLSI Technology: Fundamentals, Practice and Modeling. New Jersey: Prentice Hall Inc, 2000.