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TMS470MF04207 TMS470MF03107

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TMS470MF04207/TMS470MF03107 16/32-Bit RISC Flash Microcontroller


Check for Samples: TMS470MF04207, TMS470MF03107

1 Features
1

High-Performance Automotive Grade Microcontroller with Safety Features Full Automotive Temperature Range ECC on Flash and SRAM CPU and Memory BIST (Built-In Self Test) ARM Cortex-M3 32-Bit RISC CPU Efficient 1.2 DMIPS/MHz Optimized Thumb2 Instruction Set Memory Protection Unit (MPU) Open Architecture With Third-Party Support Built-In Debug Module Operating Features Up to 80MHz System Clock Single 3.3V Supply Voltage Integrated Memory 448KB Total Program Flash with ECC Support for Flash EEPROM Emulation 24K-Byte Static RAM (SRAM) with ECC Key Peripherals High-End Timer, MibADC, CAN, MibSPI Common TMS470M/570 Platform Architecture Consistent Memory Map across the family Real-Time Interrupt Timer (RTI) Digital Watchdog Vectored Interrupt Module (VIM) Cyclic Redundancy Checker (CRC) Frequency-Modulated Zero-Pin Phase-Locked Loop (FMzPLL)-Based Clock Module Oscillator and PLL clock monitor Up to 49 Peripheral IO pins 4 Dedicated GIO - w/ External Interrupts

Two External Clock Prescale (ECP) Modules Programmable Low-Frequency External Clock (ECLK) One Dedicated Pin and One Muxed ECLK/HET pin Communication Interfaces Two CAN Controllers One with 32 mailboxes, one with 16 Parity on mailbox RAM Two Multi-buffered Serial Peripheral Interface (MibSPI) 12 total chip selects 64 buffers with parity on each Two UART (SCI) interfaces H/W Support for Local Interconnect Network (LIN 2.1 master mode) High-End Timer (HET) Up to 16 Programmable I/O Channels 128-Word High-End Timer RAM with Parity 16-Channel 10-Bit Multi-Buffered ADC (MibADC) 64-Word FIFO Buffer with Parity Single- or Continuous-Conversion Modes 1.55 s Minimum Sample/Conversion Time Calibration Mode and Self-Test Features On-Chip Scan-Base Emulation Logic IEEE Standard 1149.1 (JTAG) Test-Access Port and Boundary Scan Packages supported 100-Pin Plastic Quad Flatpack (PZ Suffix) Green/Lead-Free Development Tools Available Development Boards Code Composer Studio Integrated Development Environment (IDE) HET Assembler and Simulator nowFlash Flash Programming Tool Community Resources TI E2E Community

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

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TMS470MF04207 TMS470MF03107
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1.1

PZ Package Views
HET[15]/ECLK2

HET[14]

HET[13]

HET[12]

HET[10]

HET[11]

ADIN[6]

ADIN[4]

ADIN[5]

ADIN[3]

ADIN[2]

ADIN[1]

ADIN[0]

ADEVT

HET[9]

HET[8]

HET[7]

HET[6]

HET[5]

HET[4] 53

VCCIOR

VCCIOR 52

VCC

VSS

73

71

63

64

74

72

70

62

69

61

60

59

58

57

56

55

75

66

54

68

67

ADIN[7]
ADIN[8]

76
77

65

51

VSS

50
49

HET[3]
HET[2]

ADIN[9] ADIN[10] ADIN[11] ADIN[12] ADREFHI ADREFLO VSSAD VCCAD ADIN[13] ADIN[14] ADIN[15] PORRST MIBSPI2ENA ENZ VCC VSS VCCIOR VCCP ECLK TEST RST FLTP1 VSS

78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100

48 47 46 45 44 43
42

TRST TMS TDI TDO TCK VCCIOR VSS VCC HET[1] HET[0] CAN2SRX CAN2STX MIBSPI1SOMI MIBSPI1SIMO MIBSPI1CLK MIBSPI1SCS[0] MIBSPI1SCS[1] MIBSPI1SCS[2] MIBSPI1SCS[3] MIBSPI1SCS[4] MIBSPI1SCS[5] MIBSPI1SCS[6] MIBSPI1SCS[7]

41 40 39 38 37

36
35 34 33 32 31 30 29 28 27 26

10

12

13

14

15

16

17

18

19

20

21

22

23 LIN1SCI1RX

24 LIN2SCI2TX

GIOA[4]/INT[4]

GIOA[5]/INT[5]

GIOA[6]/INT[6]

GIOA[7]/INT[7]

MIBSPI2SIMO

MIBSPI2SCS[0]

MIBSPI2SCS[2]

MIBSPI2SCS[3]

MIBSPI2SCS[1]

MIBSPI2SOMI

VSS

VCCIOR

MIBSPI2CLK

VCCIOR

VCC

VSS

LIN1SCI1TX

CAN1STX

OSCIN

Figure 1-1. TMS470MF04207 and TMS470MF03107 100-Pin PZ Package (Top View)

Features

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LIN2SCI2RX

CAN1SRX

VSS

OSCOUT

25

11

TMS470MF04207 TMS470MF03107
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1.2

Description
The TMS470MF04207/03107 devices are members of the Texas Instruments TMS470M family of Automotive Grade 16/32-bit reduced instruction set computer (RISC) microcontrollers. The TMS470M microcontrollers offer high performance utilizing the high efficiency Cortex-M3 16/32-bit RISC central processing unit (CPU), resulting in a high instruction throughput while maintaining greater code efficiency. The TMS470M devices utilize the big-endian format where the most-significant byte of a word is stored at the lowest numbered byte and the least-significant byte is stored at the highest numbered byte. High-end embedded control applications demand more performance from their controllers while maintaining low costs. The TMS470M microcontroller architecture offers solutions to these performance and cost demands while maintaining low power consumption. The TMS470MF04207/03107 device contains the following: 16/32-Bit RISC CPU Core TMS470MF04207 Up to 448K-Byte Program Flash with SECDED ECC TMS470MF03107 Up to 320K-Byte Program Flash with SECDED ECC 64K-Byte Flash with SECDED ECC for additional program space or EEPROM Emulation Up to 24K-Byte Static RAM (SRAM) with SECDED ECC Real-Time Interrupt Timer (RTI) Vectored Interrupt Module (VIM) Hardware built-in self-test (BIST) checkers for SRAM (MBIST) and CPU (LBIST) 64-bit Cyclic Redundancy Checker (CRC) Frequency-Modulated Zero-Pin Phase-Locked Loop (FMzPLL)-Based Clock Module With Prescaler Two Multi-buffered Serial Peripheral Interfaces (MibSPI) Two UARTs (SCI) with Local Interconnect Network Interfaces (LIN) Two CAN Controller (DCAN) High-End Timer (HET) External Clock Prescale (ECP) Module One 16-Channel 10-Bit Multi-Buffered ADC (MibADC) Error Signaling Module (ESM) Four Dedicated General-Purpose I/O (GIO) Pins and 45 Additional Peripheral I/Os (100-Pin Package) The TMS470M memory includes general-purpose SRAM supporting single-cycle read/write accesses in byte, half-word, and word modes. The SRAM on the TMS470M devices can be protected by means of ECC. This feature utilizes a single error correction and double error detection circuit (SECDED circuit) to detect and optionally correct single bit errors as well as detect all dual bit and some multi-bit errors. This is achieved by maintaining an 8-bit ECC checksum/code for each 64-bit double-word of memory space in a separate ECC RAM memory space. The flash memory on this device is a nonvolatile, electrically erasable and programmable memory. It is implemented with a 144-bit wide data word (128-bit without ECC) and a 64-bit wide flash module interface. The flash operates with a system clock frequency of up to 28 MHz. Pipeline mode, which allows linear prefetching of flash data, enables a system clock of up to 80 MHz. The enhanced real-time interrupt (RTI) module on the TMS470M devices has the option to be driven by the oscillator clock. The digital watchdog (DWD) is a 25-bit resetable decrementing counter that provides a system reset when the watchdog counter expires. The TMS470M devices have six communication interfaces: two LIN/SCIs, two DCANs, and two MibSPIs. The LIN is the Local Interconnect Network standard and also supports an SCI mode. SCI can be used in a full-duplex, serial I/O interface intended for asynchronous communication between the CPU and other peripherals using the standard non-return-to-zero (NRZ) format. The DCAN uses a serial, multimaster communication protocol that efficiently supports distributed real-time control with robust communication

Copyright 2012, Texas Instruments Incorporated

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rates of up to 1 megabit per second (Mbps). The DCAN is ideal for applications operating in noisy and harsh environments (e.g., automotive and industrial fields) that require reliable serial communication or multiplexed wiring. The MibSPI provides a convenient method of serial interaction for high-speed communications between similar shift-register type devices. The MibSPI provides the standard SOMI, SIMO, and SPI clock interface as well as up to eight chip select lines. The HET is an advanced intelligent timer that provides sophisticated timing functions for real-time applications. The timer is software-controlled, using a reduced instruction set, with a specialized timer micromachine and an attached I/O port. The HET can be used for compare, capture, or general-purpose I/O. It is especially well suited for applications requiring multiple sensor information and drive actuators with complex and accurate time pulses. The TMS470M HET peripheral contains the XOR-share feature. This feature allows two adjacent HET high- resolution channels to be XORed together, making it possible to output smaller pulses than a standard HET. The TMS470M devices have one 10-bit-resolution, sample-and-hold MibADC. Each of the MibADC channels can be grouped by software for sequential conversion sequences. There are three separate groupings, all three of which can be triggered by an external event. Each sequence can be converted once when triggered or configured for continuous conversion mode. The frequency-modulated zero-pin phase-locked loop (FMzPLL) clock module contains a phase-locked loop, a clock-monitor circuit, a clock-enable circuit, and a prescaler. The function of the FMzPLL is to multiply the external frequency reference to a higher frequency for internal use. The FMzPLL provides the input to the global clock module (GCM). The GCM module subsequently provides system clock (HCLK), real-time interrupt clock (RTICLK), CPU clock (GCLK), HET clock (VCLK2), DCAN clock (AVCLK1), and peripheral interface clock (VCLK) to all other TMS470M device modules. The TMS470MF04207/TMS470MF03107 devices also have two external clock prescaler (ECP) modules that when enabled, output a continuous external clock (ECLK). The ECLK1 frequency is a user-programmable ratio of the peripheral interface clock (VCLK) frequency. The second ECLK output can be selected in place of HET15 output. It shares the same source clock as ECLK1 but can be independently programmed for a separate output frequency from ECLK1. An error signaling module (ESM) provides a common location within the device for error reporting allowing efficient error checking and identification.

Features

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1.3

Functional Block Diagram


Figure 1-2 shows the functional block diagram of the TMS470M devices.
TMS470MF04207/ TMS470MF03107 LBIST Cortex M3 with MPU

JTAG-DP

ICEPICK

nVIC

TMS TCK TRST TDI TDO

Boundary Scan M3VIM HET 128 Words w/Parity ESM


RST PORRST TEST ECLK LIN/SCI1TX LIN/SCI1RX LIN/SCI2TX LIN/SCI2RX MIBSPI1SIMO MIBSPI1SOMI MIBSPI1CLK MIBSPI1SCS[7:0] MIBSPI2SIMO MIBSPIP2SOMI MIBSPI2CLK MIBSPI2SCS[3:0] MIBSPI2ENA

D SYS

HET[15:0]

SYS BMM BMM LIN/SCI1 LIN/SCI2 VCCP FLTP1 Flash Up to 384KB w/ECC RAM Up to 24KB w/ECC MBIST Flash 64KB w/ECC MibSPI2 64 Words/ 8TGs w/Parity PSA A2V MibSPI1 64 Words/ 16TGs w/Parity

PCR OSCIN1 OSCOUT1 OSC PLL CLK Monitor ADC 64 Words w/Parity DCAN1 16 Mailboxes w/Parity DCAN2 32 Mailboxes w/Parity GIO ADIN[15:0] ADEVT VCCAD VSSAD ADREFHI ADREFLO CANS1RX CANS1TX CANS2RX CANS2TX GIOOA[7:4]/INTA[7:4]

Flash Wrapper

RAM Wrapper

RTI/ DWD

VCCIOR ENZ

1.5-V P-Ch VREG VCCOUT

VCC VCC VCC VCC

Passgate1 Passgate2 Passgate3 Passgate4

Figure 1-2. TMS470M Functional Block Diagram

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1.4

Terms and Acronyms


Table 1-1. Terms and Acronyms

Terms and Acronyms A2V

Description AHB to VBUSP Bridge

Comments The A2V bridge provides the memory interface between the proprietary TI VBUSP and the ARM AHB bus in the TMS470 platform devices. Part of the M3 core The BMM provides connectivity between different bus slave modules to different bus master modules. Accesses from different master modules are executed in parallel if no resource conflict occurs or if the master modules are kept in series through arbitration DAP is an implementation of an ARM Debug Interface.

ADC AHB BMM

Analog To Digital Converter Advanced High-performance Bus Bus Matrix Master

CRC DAP DCAN DWD ECC ESM GIO HET ICEPICK

Cyclic Redundancy Check Controller Debug Access Port Controller Area Network Digital Watchdog Error Correction Code Error Signaling Module General-Purpose Input/Output High-End Timer In Circuit Emulation TAP (Test Access Port) Selection Module Joint Test Access Group JTAG Debug Port ICEPick can connect or isolate a module level TAP to or from a higher level chip TAP. ICEPick was designed with both emulation and test requirements in mind. IEEE Committee responsible for Test Access Ports JTAG-DP contains a debug port state machine (JTAG) that controls the JTAG-DP operation, including controlling the scan chain interface that provides the external physical interface to the JTAG-DP. It is based closely on the JTAG TAP State Machine, see IEEE Std 1149.1-2001. Test the integrity of M3 CPU

JTAG JTAG-DP

LBIST LIN M3VIM MBIST MibSPI MPU NVIC OSC PCR PLL PSA RTI SCI SECDED STC SYS VBUS VBUSP VREG

Logic Built-In Self Test Local Interconnect Network Cortex-M3 Vectored Interrupt Manager Memory Built-In Self Test Multi-Buffered Serial Peripheral Interface Protection Unit Nested Vectored Interrupt Controller Oscillator Peripheral Central Resource Phase-Locked Loop Parallel Signature Analysis Real-Time Interrupt Serial Communication Interface Single Error Correction and Double Error Detection Self Test Controller System Module Virtual Bus Virtual Bus-Pipelined Voltage Regulator

Test the integrity of SRAM

Part of the M3 core

One of the protocols that comprises CBA (Common Bus Architecture) One of the protocols that comprises CBA (Common Bus Architecture)

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................................................... 1 1.1 PZ Package Views ................................... 2 1.2 Description ........................................... 3 1.3 Functional Block Diagram ............................ 5 1.4 Terms and Acronyms ................................ 6 Device Overview ........................................ 8 2.1 Memory Map Summary .............................. 9 2.2 Terminal Functions ................................. 14 2.3 Device Support ..................................... 18 Device Configurations ................................ 20 3.1 Reset/Abort Sources ............................... 20 3.2 Lockup Reset Module .............................. 21 3.3 ESM Assignments .................................. 21 3.4 Interrupt Priority (M3VIM) ........................... 22 3.5 MibADC ............................................. 23 3.6 MibSPI .............................................. 24 3.7 JTAG ID ............................................ 25 3.8 Scan Chains ........................................ 25 3.9 Adaptive Impedance 4 mA IO Buffer ............... 25 3.10 Built-In Self Test (BIST) Features .................. 29 3.11 Device Identification Code Register ................ 32
Features

3.12

Device Part Numbers

Device Operating Conditions


4.1 4.2 4.3

............................... .......................

33

34

Absolute Maximum Ratings Over Operating Free-Air Temperature Range, Q Version ........... 34 Device Recommended Operating Conditions ...... 34 Electrical Characteristics Over Recommended Operating Free-Air Temperature Range, Q Version ...................................................... 35

Peripheral Information and Electrical Specifications .......................................... 36

6 7

........................ ...................... 5.3 SPIn Master Mode Timing Parameters ............. 5.4 SPIn Slave Mode Timing Parameters .............. 5.5 CAN Controller (DCANn) Mode Timings ........... 5.6 High-End Timer (HET) Timings ..................... 5.7 Multi-Buffered A-to-D Converter (MibADC) ......... Revision History ....................................... Mechanical Data ....................................... 7.1 Thermal Data ....................................... 7.2 Packaging Information ..............................
5.1 5.2 RST and PORRST Timings PLL and Clock Specifications

36 39 50 54 58 58 59

63 64
64 64

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Contents

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2 Device Overview
The TMS470MF04207/03107 device is a TMS470M Platform Architecture implemented in F035 130-nm TI technology. Table 2-1 identifies all the characteristics of the TMS470MF04207/03107 device except the SYSTEM and CPU, which are generic. Table 2-1. Device Characteristics
CHARACTERISTICS MEMORY INTERNAL MEMORY Pipeline/Non-Pipeline 2 Banks with up to 448K-Byte Flash with ECC Up to 24K-Byte SRAM with ECC CRC, 1-channel Flash is pipeline-capable DEVICE DESCRIPTION TMS470MF04207/03107 COMMENTS FOR TMS470M

PERIPHERALS For the device-specific interrupt priority configurations, see Table 3-4. For the peripheral address ranges and their peripheral selects, see Table 2-7. CLOCK GENERAL-PURPOSE I/Os LIN/SCI DCAN MibSPI FMzPLL 4 I/O 2 LIN/SCI 2 DCAN 2 MibSPI Each with 16/32 mailboxes, respectively. One MibSPI with eight chip select pins, 16 transfer groups, and a 64 word buffer with parity. A second MibSPI with four chip select pins, 1 enable pin, 8 transfer groups, and a 64 word buffer with parity. The high-resolution (HR) SHARE feature allows even-numbered HR pins to share the next higher odd-numbered HR pin structures. This HR sharing is independent of whether or not the odd pin is available externally. If an odd pin is available externally and shared, then the odd pin can only be used as a general-purpose I/O. HET RAM with parity checking capability. MibADC RAM includes parity support. The core voltage is supplied and regulated by the device's internal voltage regulator. There is not need for an externally supplied core voltage. Available in a 100-pin package. The 100-pin package designator is PZ. Frequency-modulated zero-pin PLL has no external loop filter pins. The GIOA port has up to four (4) external pins with external interrupt capability.

HET with XOR Share

16 I/O

HET RAM MibADC CORE VOLTAGE

128-Instruction Capacity 10-bit, 16-channel 64-word FIFO 1.55 V

I/O VOLTAGE PINS PACKAGE

3.3 V 100 PZ (100 pin)

Device Overview

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2.1 2.1.1

Memory Map Summary Memory Map


Figure 2-1 and Figure 2-2 show the TMS470MF04207 and TMS470MF03107 memory maps.
0xFFFFFFFF 0xFFF80000 0xFFF7FFFF 0xFF000000 0xFEFFFFFF 0xFE000000 SYSTEM Module Peripherals PSA

0x08405FFF 0x08400000 0x08105FFF 0x08100000 0x08085FFF 0x08080000 0x08005FFF 0x08000000 0x0047FFFF 0x00440000 0x0042FFFF 0x00400000 0x0008FFFF 0x00080000 0x0005FFFF

RAM - ECC

RAM - CLR Space

(A)

(24KB)

RAM - SET Space

(A)

(24KB)

RAM (24KB) FLASH - ECC (Bank 1) FLASH - ECC (Bank 0) FLASH (64KB - Bank 1)

FLASH (384KB - Bank 0) 0x00000000

A.

The RAM supports bit access operation which allows set/clear to dedicated bits without disturbing the other bits; for detailed description, see the Architecture Specification.

Figure 2-1. TMS470MF04207 Memory Map

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0xFFFFFFFF 0xFFF80000 0xFFF7FFFF 0xFF000000 0xFEFFFFFF 0xFE000000

SYSTEM Module Peripherals PSA

0x08403FFF 0x08400000 0x08103FFF 0x08100000 0x08083FFF 0x08080000 0x08003FFF 0x08000000 0x00447FFF 0x00440000 0x0041FFFF 0x00400000 0x0008FFFF 0x00080000 0x0003FFFF

RAM - ECC

RAM - CLR Space

(A)

(16KB)

RAM - SET Space

(A)

(16KB)

RAM (16KB) FLASH - ECC (Bank 1) FLASH - ECC (Bank 0) FLASH (64KB - Bank 1) FLASH (256KB - Bank 0)

0x00000000

A.

The RAM supports bit access operation which allows set/clear to dedicated bits without disturbing the other bits; for detailed description, see the Architecture Specification.

Figure 2-2. TMS470MF03107 Memory Map

10

Device Overview

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2.1.2

Memory Selects
Memories in the TMS470M devices are located at fixed addresses. Table 2-2 through Table 2-7 detail the mapping of the memory regions. Table 2-2. TMS470MF04207-Specific Memory Frame Assignment

MEMORY FRAME NAME nCS0 (1) RAM-CLR RAM-SET CSRAM0 (1) (1)

START ADDRESS 0x0000 0000 0x0008 0000 0x0810 0000 0x0808 0000 0x0800 0000 0x0840 0000

ENDING ADDRESS 0x0005 FFFF 0x0008 FFFF 0x0810 5FFF 0x0808 5FFF 0x0800 5FFF 0x0840 5FFF

MEMORY TYPE Flash Flash Internal RAM Internal RAM Internal RAM Internal RAM-ECC

ACTUAL MEMORY 384K Bytes 64K Bytes 24K Bytes 24K Bytes 24K Bytes 24K Bytes

Additional address mirroring could be present resulting in invalid but addressable locations beyond those listed above. TI recommends the use of the MPU for protecting access to addresses outside the intended range of use.

Table 2-3. TMS470MF03107-Specific Memory Frame Assignment


MEMORY FRAME NAME nCS0 (1) RAM-CLR RAM-SET CSRAM0 (1) (1) START ADDRESS 0x0000 0000 0x0008 0000 0x0810 0000 0x0808 0000 0x0800 0000 0x0840 0000 ENDING ADDRESS 0x0003 FFFF 0x0008 FFFF 0x0810 3FFF 0x0808 3FFF 0x0800 3FFF 0x0840 3FFF MEMORY TYPE Flash Flash Internal RAM Internal RAM Internal RAM Internal RAM-ECC ACTUAL MEMORY 256K Bytes 64K Bytes 16K Bytes 16K Bytes 16K Bytes 16K Bytes

Additional address mirroring could be present resulting in invalid but addressable locations beyond those listed above. TI recommends the use of the MPU for protecting access to addresses outside the intended range of use.

Table 2-4. Memory Initialization and MBIST


CONNECTING MODULE System RAM (TMS470MF04207) System RAM (TMS470MF03107) MibSPI1 RAM MibSPI2 RAM DCAN1 RAM DCAN2 RAM ADC RAM HET RAM STC ROM (1) ADDRESS RANGE BASE ADDRESS 0x0800 0000 0x0800 0000 0xFF0E 0000 0xFF0C 0000 0xFF1E 0000 0xFF1C 0000 0xFF3E 0000 0xFF46 0000 Not Applicable ENDING ADDRESS 0x0800 5FFF 0x0800 3FFF 0xFF0F FFFF 0xFF0D FFFF 0xFF1F FFFF 0xFF1D FFFF 0xFF3F FFFF 0xFF47 FFFF Not Applicable MEMORY INITIALIZATION CHANNEL 0 0 1 2 3 4 5 Not Available Not Applicable MBIST CONTROLLER ENABLE CHANNEL 0 0 1 or 2 (1) 3 or 4 (1) 5 6 7

There are single MBIST controllers for both MibSPI RAMs and both DCAN RAMs. The MBIST controller for both MibSPI RAMs is mapped to channels 1 and 2 and the MBIST controller for both DCAN RAMs is mapped to channels 3 and 4. MBIST on these modules can be initiated by selecting one of the 2 channels or both.

Table 2-5. Peripheral Memory Chip Select Assignment


CONNECTING MODULE MibSPI1 RAM MibSPI2 RAM DCAN1 RAM DCAN2 RAM
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ADDRESS RANGE BASE ADDRESS 0xFF0E 0000 0xFF0C 0000 0xFF1E 0000 0xFF1C 0000 ENDING ADDRESS 0xFF0F FFFF 0xFF0D FFFF 0xFF1F FFFF 0xFF1D FFFF

PERIPHERAL SELECTS PCS[7] PCS[6] PCS[14] PCS[15] Device Overview 11

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Table 2-5. Peripheral Memory Chip Select Assignment (continued)


CONNECTING MODULE ADC RAM HET RAM ADDRESS RANGE BASE ADDRESS 0xFF3E 0000 0xFF46 0000 ENDING ADDRESS 0xFF3F FFFF 0xFF47 FFFF PERIPHERAL SELECTS PCS[31] PCS[35]

NOTE
All used peripheral memory chip selects should decode down to the smallest possible address for this particular peripheral configuration, starting from 4kB upwards. Unused addresses should generate an illegal address error when accessed.

Table 2-6. System Peripheral Registers


FRAME NAME PSA Flash Wrapper Registers PCR Register System Frame 2 Registers CPU STC (LBIST) ESM Register RAM ECC Register RTI Register VIM Register System Registers ADDRESS RANGE FRAME START ADDRESS 0xFE00 0000 0xFFF8 7000 0xFFFF E000 0xFFFF E100 0xFFFF E400 0xFFFF F500 0xFFFF F900 0xFFFF FC00 0xFFFF FE00 0xFFFF FF00 FRAME ENDING ADDRESS 0xFEFF FFFF 0xFFF8 7FFF 0xFFFF E0FF 0xFFFF E1FF 0xFFFF E4FF 0xFFFF F5FF 0xFFFF F9FF 0xFFFF FCFF 0xFFFF FEFF 0xFFFF FFFF

Table 2-7. Peripheral Select Map with Address Range


CONNECTING MODULE MibSPI2 MibSPI1 LIN/SCI1 LIN/SCI2 DCAN2 DCAN1 ADC GIO HET BASE ADDRESS 0xFFF7 F600 0xFFF7 F400 0xFFF7 E500 0xFFF7 E400 0xFFF7 DE00 0xFFF7 DC00 0xFFF7 C000 0xFFF7 BC00 0xFFF7 B800 END ADDRESS 0xFFF7 F7FF 0xFFF7 F5FF 0xFFF7 E5FF 0xFFF7 E4FF 0xFFF7 DFFF 0xFFF7 DDFF 0xFFF7 C1FF 0xFFF7 BCFF 0xFFF7 B8FF PERIPHERAL SELECTS PS[2] PS[6] PS[8] PS[15] PS[16] PS[17]

2.1.3

Flash Memory
When in pipeline mode, the Flash operates with a system clock frequency of up to 80 MHz (versus a system clock in non-pipeline mode of up to 28 MHz). Flash in pipeline mode is capable of accessing 128-bit words and provides four 32-bit pipelined words to the CPU.

12

Device Overview

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NOTE
1. After a system reset, pipeline mode is disabled [FRDCNTL[2:0] is 000b, see the Flash chapter in the TMS470M Series Technical Reference Manual (literature number SPNU495)]. In other words, the device powers up and comes out of reset in non-pipeline mode. 2. The flash external pump voltage (VCCP) is required for all operations (program, erase, and read).

2.1.4

Flash Program and Erase


The TMS470MF04207/TMS470MF03107 devices flash contain one 384/256K-byte memory array (or bank) and one 64K-byte bank for a total of up to 12 sectors. Table 2-8 and Table 2-9 show the TMS470MF04207 and TMS470MF03107 flash memory banks and sectors. The minimum size for an erase operation is one sector. The maximum size for a program operation is one 32-bit word. Table 2-8. TMS470MF04207 Flash Memory Banks and Sectors

SECTOR NO. 0 1 2 3 4 5 6 7 0 1 2 3 (1)

SEGMENT 16k 16k 32k 64k 64k 64k 64k 64k 16k 16k 16k 16k

LOW ADDRESS 0x0000 0000 0x0000 4000 0x0000 8000 0x0001 0000 0x0002 0000 0x0003 0000 0x0004 0000 0x0005 0000 0x0008 0000 0x0008 4000 0x0008 8000 0x0008 C000

HIGH ADDRESS 0x0000 3FFF 0x0000 7FFF 0x0000 FFFF 0x0001 FFFF 0x0002 FFFF 0x0003 FFFF 0x0004 FFFF 0x0005 FFFF 0x0008 3FFF 0x0008 7FFF 0x0008 BFFF 0x0008 FFFF

MEMORY ARRAYS (OR BANKS)

BANK 0 (384K Bytes)

BANK 1 (1) (64K Bytes)

Bank 1 can be used as either EEPROM emulation space or as program space.

Table 2-9. TMS470MF03107 Flash Memory Banks and Sectors


SECTOR NO. 0 1 2 3 4 5 0 1 2 3 (1) SEGMENT 16k 16k 32k 64k 64k 64k 16k 16k 16k 16k LOW ADDRESS 0x0000 0000 0x0000 4000 0x0000 8000 0x0001 0000 0x0002 0000 0x0003 0000 0x0008 0000 0x0008 4000 0x0008 8000 0x0008 C000 HIGH ADDRESS 0x0000 3FFF 0x0000 7FFF 0x0000 FFFF 0x0001 FFFF 0x0002 FFFF 0x0003 FFFF 0x0008 3FFF 0x0008 7FFF 0x0008 BFFF 0x0008 FFFF BANK 1 (1) (64K Bytes) BANK 0 (256K Bytes) MEMORY ARRAYS (OR BANKS)

Bank 1 can be used as either EEPROM emulation space or as program space.

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2.2

Terminal Functions
The terminal functions table (Table 2-10) identifies the pin names, the associated pin numbers, input voltage, output voltage, whether the pin has any internal pullup/pulldown resistors and a functional pin description. The TMS470MF04207 and TMS470MF03107 devices have the same pin out. Table 2-10. Terminal Functions
TERMINAL NAME 100 PIN INPUT VOLTAGE (1)
(2)

OUTPUT CURRENT (3)

IPU/IPD (4)

DESCRIPTION

HIGH-END TIMER (HET) HET[0] HET[1] HET[2] HET[3] HET[4] HET[5] HET[6] HET[7] HET[8] HET[9] HET[10] HET[11] HET[12] HET[13] HET[14] HET[15]/ECLK2 CAN1STX CAN1SRX 39 40 49 50 53 54 55 56 57 58 59 60 61 62 63 64 CAN CONTROLLER 1 (DCAN1) 7 8 3.3-V I/O Adaptive impedance 4 mA Adaptive impedance 4 mA Programmable IPU (100 A) DCAN1 transmit pin or GIO pin. DCAN1 receive pin or GIO pin. 3.3-V I/O Adaptive impedance 4 mA Programmable IPD (100 A) Timer input capture or output compare. The HET[15:0] applicable pins can be programmed as general-purpose input/output (GIO) pins. The high-resolution (HR) SHARE feature allows even HR pins to share the next higher odd HR pin structure. The next higher odd HR pin structure is always implemented, even if the next higher odd HR pad and/or pin itself is not. Note: HET[15] is muxed with ECLK2 output. If ECLK2 output is enabled (through SYSPC1 register at 0xFFFFFF00), ECLK2 is output on this pin and HET[15] becomes an internal only HET channel. Note: ECLK2 source select must be programmed the same as ECLK1 due to device specific implementation details. Note: ECLK2 is enabled and ECLK2 divider is programmed through ECP control register 1 in System Frame 2 Registers (0xFFFFE128).

CAN CONTROLLER 2 (DCAN2) CAN2STX CAN2SRX 37 38 3.3-V I/O Programmable IPU (100 A) DCAN2 transmit pin or GIO pin DCAN2 receive pin or GIO pin

GENERAL-PURPOSE I/O (GIO) GIOA[4]/INT[4] GIOA[5]/INT[5] GIOA[6]/INT[6] GIOA[7]/INT[7] 5 6 15 16 3.3-V I/O Adaptive impedance 4 mA Programmable IPD (100 A) General-purpose input/output pins. They are interrupt-capable pins.

(1) (2) (3) (4) 14

PWR = power, GND = ground, REF = reference voltage, NC = no connect All I/O pins, except RST, are configured as inputs while PORRST is low and immediately after PORRST goes high. The TMS470M device utilizes adaptive impedance 4 mA buffers that default to an adaptive impedance mode of operation. As a fail-safe, the adaptive impedance features of the buffer may be disabled and revert the buffer to a standard buffer mode. IPD = internal pulldown, IPU = internal pullup (all internal pullups and pulldowns are inactive on input pins when PORRST is asserted) Device Overview
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Table 2-10. Terminal Functions (continued)


TERMINAL NAME 100 PIN INPUT VOLTAGE (1)
(2)

OUTPUT CURRENT (3)

IPU/IPD (4)

DESCRIPTION

MULTI-BUFFERED SERIAL PERIPHERAL INTERFACE 1 (MIBSPI1) MIBSPI1CLK MIBSPI1SCS[0] MIBSPI1SCS[1] MIBSPI1SCS[2] MIBSPI1SCS[3] MIBSPI1SCS[4] MIBSPI1SCS[5] MIBSPI1SCS[6] MIBSPI1SCS[7] MIBSPI1SIMO MIBSPI1SOMI 34 33 32 31 30 29 28 27 26 35 36 MIBSPI1 data stream. Slave in/master out. MIBSPI1SIMO can be programmed as a GIO pin. MIBSPI1 data stream. Slave out/master in. MIBSPI1SOMI can be programmed as a GIO pin. MULTI-BUFFERED SERIAL PERIPHERAL INTERFACE 2 (MibSPI2) MibSPI2CLK MibSPI2SCS[0] MibSPI2SCS[1] MibSPI2SCS[2] MibSPI2SCS[3] MibSPI2ENA MibSPI2SIMO[0] 17 1 2 3 4 90 18 3.3-V I/O Adaptive impedance 4 mA Programmable IPU (100 A) MibSPI2 slave chip select MibSPI2SCS[3:0] can be programmed as GIO pins. MibSPI2 clock. MibSPI2CLK can be programmed as a GIO pin. 3.3-V I/O Adaptive impedance 4 mA Programmable IPU (100 A) MIBSPI1 slave chip select. MIBSPI1SCS[7:0] can be programmed as a GIO pins. MIBSPI1 clock. MIBSPI1CLK can be programmed as a GIO pin.

MibSPI2 enable pin. MibSPI2ENA can be programmed as a GIO pin. MibSPI2 data stream. Slave in/master out. MibSPI2SIMO pins can be programmed as a GIO pins. MibSPI2 data stream. Slave out/master in. MibSPI2SOMI pins can be programmed as GIO pins. LIN/SCI1 data receive. Can be programmed as a GIO pin. LIN/SCI1 data transmit. Can be programmed as a GIO pin. LIN/SCI2 data receive. Can be programmed as a GIO pin. LIN/SCI2 data transmit. Can be programmed as a GIO pin. MibADC event input. Can be programmed as a GIO pin.

MibSPI2SOMI[0]

19

LOCAL INTERCONNECT NETWORK/SERIAL COMMUNICATIONS INTERFACE (LIN/SCI) LIN/SCI1RX LIN/SCI1TX LIN/SCI2RX LIN/SCI2TX 23 22 25 24 3.3-V I/O 3.3-V I/O Adaptive impedance 4 mA Adaptive impedance 4 mA Programmable IPU (100 A)

Programmable IPU (100 A)

MULTI-BUFFERED ANALOG-TO-DIGITAL CONVERTER (MIBADC) ADEVT 68 3.3-V I/O Adaptive impedance 4 mA Programmable IPD (100 A)

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Table 2-10. Terminal Functions (continued)


TERMINAL NAME ADIN[0] ADIN[1] ADIN[2] ADIN[3] ADIN[4] ADIN[5] ADIN[6] ADIN[7] ADIN[8] ADIN[9] ADIN[10] ADIN[11] ADIN[12] ADIN[13] ADIN[14] ADIN[15] ADREFHI ADREFLO VCCAD VSSAD OSCIN OSCOUT PORRST RST 100 PIN 69 70 71 72 73 74 75 76 77 78 79 80 81 86 87 88 82 83 85 84 10 11 89 98 Adaptive impedance 4 mA 3.3-V REF GND REF 3.3-V PWR GND OSCILLATOR (OSC) 1.55-V I 1.55-V O SYSTEM MODULE (SYS) 3.3-V I IPD (100 A) Input master chip power-up reset. External VCC monitor circuitry must assert a power-on reset. Bidirectional reset. The internal circuitry can assert a reset, and an external system reset can assert a device reset. On this pin, the output buffer is implemented as an open drain (drives low only). To ensure an external reset is not arbitrarily generated, TI recommends that an external pullup resistor be connected to this pin. Bidirectional pin. ECLK can be programmed as a GIO pin. Crystal connection pin or external clock input. External crystal connection pin. MibADC module high-voltage reference input. MibADC module low-voltage reference input. MibADC analog supply voltage. MibADC analog ground reference. 3.3 V MibADC analog input pins. INPUT VOLTAGE (1)
(2)

OUTPUT CURRENT (3)

IPU/IPD (4)

DESCRIPTION

3.3-V I/O

IPU (100 A)

ECLK

96

3.3-V I/O

Adaptive impedance 4 mA

Programmable IPD (100 A)

TEST/DEBUG (T/D) TCK TDI 44 46 IPU (100 A) TDO 45 3.3-V I/O Adaptive impedance 4 mA 3.3-V I IPD (100 A) Test clock. TCK controls the test hardware (JTAG). Test data in pin. TDI inputs serial data to the test instruction register, test data register, and programmable test address (JTAG). Test data out pin. TDO outputs serial data from the test instruction register, test data register, identification register, and programmable test address (JTAG). Serial input pin for controlling the state of the CPU test access port (TAP) controller (JTAG). Test hardware reset to TAP. IEEE Standard 1149-1 (JTAG) Boundary-Scan Logic.

IPD (100 A)

TMS TRST

47 48 3.3-V I

IPU (100 A) IPD (100 A)

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Table 2-10. Terminal Functions (continued)


TERMINAL NAME TEST 100 PIN 97 3.3-V I ENZ 91 IPD (100 A) INPUT VOLTAGE (1)
(2)

OUTPUT CURRENT (3)

IPU/IPD (4)

DESCRIPTION Test enable. Reserved for internal use only. TI recommends that this pin be connected to ground or pulled down to ground by an external resistor. Enables/disables the internal voltage regulator. 0V - Enables internal voltage regulator.

3.3-V I

IPD (100 A)

3.3V-Disables internal voltage regulator. Note: The ENZ pin is provided to facilitate testing across the core voltage range and is not intended for disabling the on chip voltage regulator during application use.

FLASH FLTP1 99 Flash Test Pad 1 pin. For proper operation, this pin must connect only to a test pad or not be connected at all [no connect (NC)]. The test pad must not be exposed in the final product where it might be subjected to an ESD event. 3.3-V PWR Flash external pump voltage (3.3 V). This pin is required for both Flash read and Flash program and erase operations. VCCP1 and VCCP2 are double bonded to the same pin. SUPPLY VOLTAGE CORE (1.55 V) VCC 12 41 67 92 SUPPLY VOLTAGE DIGITAL I/O AND REGULATOR (3.3 V) VCCIOR 14 20 43 52 65 94 SUPPLY GROUND VSS 9 13 21 42 51 66 93 100 GND Digital I/O and core supply ground reference. 3.3-V PWR Digital I/O and internal regulator supply voltage. 1.55-V PWR Vreg output voltage when Vreg is enabled. VCC input when Vreg is disabled.

VCCP1 VCCP2

95 95

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2.3 2.3.1

Device Support Device and Development-Support Tool Nomenclature


To designate the stages in the product development cycle, TI assigns prefixes to the part numbers of all devices and support tools. Each commercial family member has one of three prefixes: TMX, TMP, or TMS (e.g.,TMS470MF04207). Texas Instruments recommends two of three possible prefix designators for its support tools: TMDX and TMDS. These prefixes represent evolutionary stages of product development from engineering prototypes (TMX/TMDX) through fully qualified production devices/tools (TMS/TMDS). Device development evolutionary flow: TMX TMP TMS Experimental device that is not necessarily representative of the final device's electrical specifications. Final silicon die that conforms to the device's electrical specifications but has not completed quality and reliability verification. Fully-qualified production device.

Support tool development evolutionary flow: TMDX TMDS Development-support product that has not yet completed Texas Instruments internal qualification testing. Fully qualified development-support product.

TMX and TMP devices and TMDX development-support tools are shipped against the following disclaimer: "Developmental product is intended for internal evaluation purposes." TMS devices and TMDS development-support tools have been characterized fully, and the quality and reliability of the device have been demonstrated fully. TI's standard warranty applies. Predictions show that prototype devices (TMX or TMP) have a greater failure rate than the standard production devices. Texas Instruments recommends that these devices not be used in any production system because their expected end-use failure rate still is undefined. Only qualified production devices are to be used. TI device nomenclature also includes a suffix with the device family name. This suffix indicates the package type (for example, PZ), the temperature range (for example, "Blank" is the commercial temperature range), and the device speed range in megahertz. Figure 2-3 illustrates the numbering and symbol nomenclature for the TMS470M family.

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Full Part Number Orderable Part Number Prefix: TM S = TMS Qualified P = TMP Prototype X = TMX Samples Core Technology: 4 = 470 Cortex M3 Architecture: MF = M3 Flash Flash Memory Size: 04 = 448K Bytes 03 = 320K Bytes RAM Memory Size: 2 = 24K Bytes 1 = 16K Bytes Peripheral Configuration:

TMS S

470 4

MF MF

04 04

2 2

07 07

B B

S S

PZ PZ

Q Q

Q1 Q1

R R

Die Revision: Blank = Initial Die A = First Die Revision B = Second Die Revision Technology/Core Voltage: S = F035 (130 nm), 1.5-V Nominal Core Voltage Package Type: PZ = 100-Pin QFP Package (Green)

Temperature Range: Q = -40C to +125C Quality Designator: Q1 = Automotive Shipping Options: R = Tape and Reel

NOTE: The part number given above is for illustrative purposes only and does not necessarily represent the specific part number or silicon revision to which this document applies.

Figure 2-3. TMS470M Device Numbering Conventions

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3 Device Configurations
3.1 Reset/Abort Sources
Resets/aborts are handled as shown in Table 3-1. Table 3-1. Reset/Abort Sources
ERROR SOURCE 1) CPU TRANSACTIONS Precise write error (NCNB/Strongly Ordered) Precise read error (NCB/Device or Normal) Imprecise write error (NCB/Device or Normal) External imprecise error (Illegal transaction with ok response) Illegal instruction M3 Lockup MPU access violation 2) SRAM ECC single error (correctable) ECC double error (uncorrectable) 3) FLASH WITH ECC ECC single error (correctable) ECC double error (uncorrectable) 8) HET HET Memory parity error 9) MIBSPI MibSPI1 memory parity error MibSPI2 memory parity error 10) MIBADC Memory parity error 11) DCAN/CAN DCAN1 memory parity error DCAN2 memory parity error 13) PLL PLL slip error 14) CLOCK MONITOR Clock monitor interrupt 19) VOLTAGE REGULATOR Vcc out of range 20) CPU SELFTEST (LBIST) CPU Selftest (LogicBIST) error 21) ERRORS REFLECTED IN THE SYSESR REGISTER Power-Up Reset/Vreg out of voltage (2) (1) (2) 20 n/a Reset n/a User/Privilege ESM 1.27 n/a Reset n/a User/Privilege ESM 1.11 User/Privilege ESM 1.10 User/Privilege User/Privilege ESM ESM 1.21 1.23 User/Privilege ESM 1.19 User/Privilege User/Privilege ESM ESM 1.17 1.18 User/Privilege ESM 1.7 User/Privilege User/Privilege ESM ESM => NMI 1.6 2.4 User/Privilege User/Privilege ESM ESM => NMI 1.26 2.6 User/Privilege User/Privilege User/Privilege User/Privilege User/Privilege User/Privilege User/Privilege Precise Abort (CPU) Precise Abort (CPU) Imprecise Abort (CPU) ESM Undefined Instruction Trap (CPU) (1) ESM => NMI Abort (CPU) n/a n/a n/a 2.17 n/a 2.16 n/a SYSTEM MODE ERROR RESPONSE ESM HOOKUP, GROUP.CHANNEL

The undefined instruction trap is NOT detected outside of the CPU. The trap is taken only if the code reaches the execute stage of the CPU. Both a power-on reset and Vreg out-of-range reset are indicated by the PORST bit in the SYSESR register. Device Configurations
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Table 3-1. Reset/Abort Sources (continued)


ERROR SOURCE Oscillator fail / PLL slip (3) M3 Lockup/LRM Watchdog time limit exceeded CPU Reset Software Reset External Reset (3) SYSTEM MODE n/a n/a n/a n/a n/a n/a ERROR RESPONSE Reset Reset Reset Reset Reset Reset ESM HOOKUP, GROUP.CHANNEL n/a n/a n/a n/a n/a n/a

Oscillator fail/PLL slip can be configured in the system register (SYS.PLLCTL1) to generate a reset.

3.2

Lockup Reset Module


The lockup reset module (LRM) is implemented to communicate a lockup condition by the core. The LRM provides a small watchdog timer which can generate a system reset in case a lockup condition that is identified by the core cannot be cleared by software.

3.3

ESM Assignments
The ESM module is intended for the communication critical system failures in a central location. The error indication is by an error interrupt when the failure is recognized from any detection unit. The ESM module consist of three error groups with 32 inputs each. The generation of the interrupts is shown in Table 3-2. ESM assignments are listed in Table 3-3. Table 3-2. ESM Groups
ERROR GROUP Group1 Group2 Group3 INTERRUPT, LEVEL maskable, low/high non-maskable, high Not Used

Table 3-3. ESM Assignments


ERROR SOURCES GROUP 1 Reserved Flash - ECC Single Bit HET memory parity error Reserved PLL Slip Error Clock Monitor interrupt Reserved MibSPI1 memory parity error MibSPI2 memory parity error MibADC memory parity error Reserved DCAN1 memory parity error Reserved DCAN2 memory parity error Reserved SRAM - single bit CPU LBIST - selftest error
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CHANNEL 0-5 6 7 8-9 10 11 12-16 17 18 19 20 21 22 23 24-25 26 27 Device Configurations 21

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Table 3-3. ESM Assignments (continued)


ERROR SOURCES Reserved GROUP 2 Reserved Flash - Double-Bit Error (uncorrectable) Reserved SRAM - Double-Bit Error (uncorrectable) Reserved M3 Lockup M3 External Imprecise Abort Reserved 0-3 4 5 6 7-15 16 17 18-31 CHANNEL 28-31

3.4

Interrupt Priority (M3VIM)


The TMS470M platform interrupt architecture includes a vectored interrupt manager (M3VIM) that provides hardware assistance for prioritizing and controlling the many interrupt sources present on a device. Table 3-4 communicates the default interrupt request assignments. Table 3-4. Interrupt Request Assignments
MODULES ESM Reserved ESM SYSTEM RTI RTI RTI RTI RTI RTI Reserved GIO GIO HET HET MibSPI1 MibSPI1 Reserved LIN/SCI2 LIN/SCI2 LIN/SCI1 LIN/SCI1 DCAN1 DCAN1 ADC ADC ADC INTERRUPT SOURCES ESM High level interrupt (NMI) (NMI) ESM Low level interrupt Software interrupt (SSI) RTI compare interrupt 0 RTI compare interrupt 1 RTI compare interrupt 2 RTI compare interrupt 3 RTI overflow interrupt 0 RTI overflow interrupt 1 Reserved GIO Interrupt A GIO Interrupt B HET level 0 interrupt HET level 1 interrupt MibSPI1 level 0 interrupt MibSPI1 level 1 interrupt Reserved LIN/SCI2 level 0 interrupt LIN/SCI2 level 1 Interrupt LIN/SCI1 level 0 interrupt LIN/SCI1 level 1 Interrupt DCAN1 level 0 Interrupt DCAN1 level 1 Interrupt ADC event group interrupt ADC sw group 1 interrupt ADC sw group 2 interrupt DEFAULT VIM INTERRUPT REQUEST 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26

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Table 3-4. Interrupt Request Assignments (continued)


MODULES MibSPI2 MibSPI2 DCAN2 DCAN2 ADC Reserved Reserved DCAN1 DCAN2 Reserved INTERRUPT SOURCES MibSPI2 level 0 interrupt MibSPI2 level 1 interrupt DCAN2 level 0 interrupt DCAN2 level 1 interrupt ADC magnitude threshold interrupt Reserved Reserved DCAN1 IF3 interrupt DCAN2 IF3 interrupt Reserved DEFAULT VIM INTERRUPT REQUEST 27 28 29 30 31 32 33 34 35 36-47

3.5

MibADC
The multi-buffered analog-to-digital converter (MibADC) accepts an analog signal and converts the signal to a 10-bit digital value. The TMS470M MibADC module stores its digital results in one of three FIFO buffers. There is one FIFO buffer for each conversion group [event, group1 (G1), and group2 (G2)], and the total MibADC FIFO on the device is divided amongst these three regions. The size of the individual group buffers are software programmable. MibADC buffers can be serviced by interrupts.

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3.5.1

MibADC Event Triggers


All three conversion groups can be configured for event-triggered operation, providing up to three event-triggered groups. The trigger source and polarity can be selected individually for group 1, group 2 and the event group from the options identified in Table 3-5. Table 3-5. MibADC Event Hookup Configuration
EVENT NO. 1 2 3 4 5 6 7 8 (1) SOURCE SELECT BITS for G1 or EVENT (G1SRC[2:0] or EVSRC[2:0]) 000 001 010 011 100 101 110 111 SIGNAL PIN NAME ADEVT HET[1] HET[3] HET[16] (1) HET[18] (1) HET[24] (1) HET[26] (1) HET[28] (1)

These channels are available as internal signals even if they are not included as pins (Section 1.1).

3.6

MibSPI
The multi-buffered serial peripheral interface module allows CPU independent SPI communications with system peripherals. The MibSPI1 module can support up to 16 transfer groups and 8 chip selects. In addition, up to 4 data formats can be supported allowing assignment of various formats to each transfer group. The MibSPI2 module can support up to 8 transfer groups, 4 chip selects, and up to 4 data formats.

3.6.1

MibSPI Event Trigger


The MibSPI module has the ability to automatically trigger SPI events based on internal and external event triggers. The trigger sources can be selected individually for each transfer group from the options identified in Table 3-6. Table 3-6. MibSPI1 and MibSPI2 Event Hookup Configuration
EVENT NO. Disabled EVENT0 EVENT1 EVENT2 EVENT3 EVENT4 EVENT5 EVENT6 EVENT7 EVENT8 (1) SOURCE SELECT BITS FOR MIBSPI EVENTS TGXCTRL TRIGSRC[3:0] 0000 0001 0010 0011 0100 0101 0110 0111 1000 1001 SIGNAL PIN NAME No trigger source GIOA[0] (1) GIOA[1] (1) GIOA[2] (1) GIOA[3] (1) GIOA[4] GIOA[5] HET[20] (1) HET[21] (1) HET[22] (1)

These channels are available as internal signals even if they are not included as pins (Section 1.1).
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Table 3-6. MibSPI1 and MibSPI2 Event Hookup Configuration (continued)


EVENT NO. EVENT9 EVENT10 EVENT11 EVENT12 EVENT13 EVENT14 SOURCE SELECT BITS FOR MIBSPI EVENTS TGXCTRL TRIGSRC[3:0] 1010 1011 1100 1101 1110 1111 SIGNAL PIN NAME HET[23] (1) HET[28] (1) HET[29] (1) HET[30] (1) HET[31] (1) Internal Tick Counter

3.7

JTAG ID
The 32-bit JTAG ID code for this device is 0x0B8D802F.

3.8

Scan Chains
The device contains an ICEPICK module to access the debug scan chains; see Figure 3-1. Debug scan chain #0 handles the access to the CPU. The ICEPICK scan ID is 0x00366D05, which is the same as the device ID.

TDI DAP TDO CPU

ICEPICK

Boundary Scan Chain #0

Boundary Scan

Boundary Scan Interface

Figure 3-1. Debug Scan Chains

3.9

Adaptive Impedance 4 mA IO Buffer


The adaptive impedance 4 mA buffer is a buffer that has been explicitly designed to address the issue of decoupling EMI sources from the pins which they drive. This is accomplished by adaptively controlling the impedance of the output buffer and should be particularly effective with capacitive loads. The adaptive impedance 4 mA buffer features two modes of operation: Impedance Control Mode, and Low-Power Mode/Standard Buffer Mode as defined below: Impedance Control Mode is enabled in the design by default. This mode adaptively controls the impedance of the output buffer.

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Standard Buffer Mode is used to configure the buffer back into a generic configuration. This buffer mode is used when it is necessary to drive the output at very high speeds, or when EMI reduction is not a concern. Table 3-7. Adaptive Impedance 4 mA Buffer Mode Availability
MODULE OR PIN NAME SYS.ECLK SYS.nRST SYS.TDI/TDO SYS.TMSC HET SCI1 LIN/SCI2 MIBSPI1 MibSPI2 Reserved MIBADC.ADEVT DCAN1 DCAN2 GIOA STANDARD BUFFER ENABLE (SBEN) (1) GPREG1.0 GPREG1.1 Standard Buffer Enabled Standard Buffer Enabled GPREG1.2 GPREG1.3 GPREG1.4 GPREG1.5 GPREG1.6 GPREG1.7 GPREG1.8 GPREG1.9 GPREG1.10 GPREG1.11

(1)

SBEN configuration can be achieved using the GPREG register within the system frame(0xFFFFFFA0).

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3.9.1

Standard Buffer Enable Register (GPREG1)


A general purpose register with the system frame has been utilized to control the enabling of standard buffer mode. This register is shown in Figure 3-2 and described in Table 3-8 NOTE
In general, all device registers are defined within the TRM (SPNU450); however, in cases where the register definition is device specific, the register is defined within the device specific datasheet.

31 Reserved R-0 15 Reserved R-0 7 Reserved RW-0 6 MibSPI2_ SBEN RW-0 5 MIBSPI1_ SBEN RW-0 4 LIN2SCI2_ SBEN RW-0 12 11 GIOA_SBEN RW-0 3 LIN1SCI1_ SBEN RW-0 10 DCAN2_SBEN RW-0 2 HET_SBEN RW-0 9 DCAN1_SBEN RW-0 1 RST_SBEN RW-0 8

16

ADC.ADEVT_ SBEN RW-0 0 ECLK_SBEN RW-0

LEGEND: R/W = Read/Write; R = Read only; -n = value after reset

Figure 3-2. General-Purpose Register 1 (GPREG1) Table 3-8. General-Purpose Register 1 (GPREG1) Field Descriptions
Bit 31-12 11 Field Reserved GIOA_SBEN 0 1 10 DCAN2_SBEN 0 1 9 DCAN1_SBEN 0 1 8 ADC.ADEVT_SBEN 0 1 7 6 Reserved MibSPI2_SBEN 0 1 5 MIBSPI1 0 1
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Value

Description These bits are reserved. Reads return 0 and writes have no effect. GIOA port standard buffer enable bit. This bit enables/disables standard buffer mode for all GIOA pins Standard buffer mode is not enabled. Standard buffer mode is enabled for all associated module pins. DCAN2 standard buffer enable bit. This bit enables/disables standard buffer mode for all DCAN2 pins. Standard buffer mode is not enabled. Standard buffer mode is enabled for all associated module pins. DCAN1 standard buffer enable bit. This bit enables/disables standard buffer mode for all DCAN1 pins. Standard buffer mode is not enabled. Standard buffer mode is enabled for all associated module pins. ADC.ADEVT standard buffer enable bit. This bit enables/disables standard buffer mode for the ADC.ADEVT pin. Standard buffer mode is not enabled. Standard buffer mode is enabled for the ADEVT pin. These bits are reserved. Reads return 0 and writes have no effect. MibSPI2 standard buffer enable bit. This bit enables/disables standard buffer mode for all MibSPI2 pins. Standard buffer mode is not enabled. Standard buffer mode is enabled for all associated module pins. MIBSPI1 standard buffer enable bit. This bit enables/disables standard buffer mode for all MIBSPI1 pins. Standard buffer mode is not enabled. Standard buffer mode is enabled for all associated module pins. Device Configurations 27

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Table 3-8. General-Purpose Register 1 (GPREG1) Field Descriptions (continued)


Bit 4 Field LIN2SCI2_SBEN 0 1 3 LIN1SCI1_SBEN 0 1 2 HET_SBEN 0 1 1 RST_SBEN 0 1 0 ECLK_SBEN 0 1 Value Description LIN/SCI2 standard buffer enable bit. This bit enables/disables standard buffer mode for all LIN/SCI2 pins. Standard buffer mode is not enabled. Standard buffer mode is enabled for all associated module pins. LIN/SCI1 standard buffer enable bit. This bit enables/disables standard buffer mode for all LIN/SCI1 pins. Standard buffer mode is not enabled. Standard buffer mode is enabled for all associated module pins. HET standard buffer enable bit. This bit enables/disables standard buffer mode for all HET pins. Standard buffer mode is not enabled. Standard buffer mode is enabled for all associated module pins. RST standard buffer enable bit. This bit enables/disables standard buffer mode for the RST pin. Standard buffer mode is not enabled. Standard buffer mode is enabled for the RST pin. ECLK standard buffer enable bit. This bit enables/disables standard buffer mode for the ECLK pin. Standard buffer mode is not enabled. Standard buffer mode is enabled for the ECLK pin.

3.9.2

Coresight Components/Debug ROM


Coresight registers are memory-mapped and accessible via the CPU and JTAG. Table 3-9. Debug Component Memory Map
COMPONENT FRAME START ADDRESS 0xE000_1000 0xE000_2000 0xE000_E000 0xE00F_F000 FRAME END ADDRESS 0xE000_1FFF 0xE000_2FFF 0xE000_EFFF 0xE00F_FFFF FRAME SIZE MEMORY TYPE

M3 INTEGRATION FRAME DWT FPB NVIC Debug ROM 1 4K 4K 4K 4K Control Registers for debug and trace modules

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Table 3-10. Debug ROM contents for Debug ROM 1 (M3 ROM)
ADDRESS OFFSET see Table 3-9 0x000 0x004 0x008 0x00C 0x010 0x014 0x018 (1) DESCRIPTION NVIC DWT FPB ITM TPIU (1) ETM
(1)

VALUE 0xFFF0_F003 0xFFF0_2003 0xFFF0_3003 0xFFF0_1003 0xFFF4_1002 0xFFF4_2002 0x0000_0000

End of Table

Cortex-M3 debug ROM always will have entries for optional components TPIU and ETM. Whether or not these components are present is determined by bit number 0 of the entry value.

3.10 Built-In Self Test (BIST) Features 3.10.1 STC/LBIST


The TMS470M family supports a logic built-in self test (LBIST or CPUBIST) of the M3 CPU. LBIST testing can be performed in two modes of operation: Full Execution. In this mode, the full suite of test patterns is run without interruption. This test is started via CPU control and is well suited for use at device start up. Cyclic Execution. During cyclic execution, a small percentage of time will be dedicated to running a subset of the self-test (STC Intervals). This mode is well suited for executing on a periodic basis to minimize the bandwidth use. After all STC intervals are executed, all test patterns will have been run. NOTE
1. The application will need to disable peripherals and or interrupts to avoid missing interrupts. 2. No debugger interaction is possible with the CPU during self test. This includes access to memory and registers since access is through the CPU.

The default value of the LBIST clock prescaler (STCDIV) is divide-by-1 and the device will support STC frequencies up to and including HCLK frequency. In order to minimize the current consumption during LBIST execution, the LBIST clock prescalar (STCDIV) may be configured to reduce the LBIST frequency.

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100 90 80 70 60 50 40 30 20 10 0

90% coverage

2500.00

2000.00

1500.00

1000.00

500.00

0.00

50

100

150

200

250 300 350 No. of Intervals

400

450

500

550

555 total intervals

Test Coverage Test Time (s)

A. B.

A single LBIST interval is 158 STC CLK cycles in duration, excluding clock transition timing of 20 cycles. This device has 555 total intervals.

Figure 3-3. CPU BIST Intervals vs Coverage

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Test Time (s)

% Coverage

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3.10.2 MBIST
The TMS470M supports memory built-in self test (MBIST) of the SRAM. The MBIST is accessible via the application in order to facilitate memory self test by the application by enabling the MBIST controllers associated with the specific RAMs to be tested. (For device-specific MBIST controller assignments, see Table 2-4.) The MBIST controller: Supports testing of all system and peripheral RAM. Captures the MBIST results in the MBIST status register (MSTFAIL). Supports execution of each Memory BIST controller in parallel (MSINENA). For MSIENA bit assignments, see Table 2-4 Supports execution of each Memory BIST controller individually (MSINENA). For MSIENA bit assignments, see Table 2-4 The MBIST controller selection is mapped to the MBIST controller/memory initialization enable register (MSIENA) within the SYS register frame. Each MBIST controller is enabled by setting the corresponding bit within this register and then enabling memory self-test via the memory self-test global enable within the global control register (MSTGCR.MSTGENA[3:0]). The MBIST controllers support execution of the following tests: Table 3-11. MBIST Algorithms and Cycle Counts (1)
Module Checker Board ADC RAM DCAN RAM SRAM HET RAM MibSPI RAM STC ROM (1) 1427 1503 26835 7539 3583 March13N Background 0 1555 1503 26835 8307 3583 Algorithm (Cycle Counts) March11N Background A 1089 1057 22529 6529 2817 March13N Background 3/0F/69 4033 3745 79873 24193 9985 PMOS Open Address Decode 4225 3265 147457 29185 10753 ROM2

18433

Cycle times provided are for the execution of the specific algorithms and do not include overhead from the BIST statemachine.

NOTE
The algorithm to be applied is selectable via the memory self-test global control register algo selection field (MSTGCR.MBIST_ALGSEL[7:0]).

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3.11 Device Identification Code Register


The device identification code register identifies the coprocessor status, an assigned device-specific part number, the technology family (TF), the I/O voltage, whether or not parity is supported, the levels of flash and RAM error detection, and the device version. The TMS470M device identification code base register value is 0X00366D05 and is subject to change based on the silicon version.
31 CP15 R-0 15 TF R-011 7 VERSION R-0000 LEGEND: R = Read only; -n = value after reset 13 30 PART NUMBER R-00000000011011 12 I/O VOLT R-0 11 PP R-1 3 2 1 R-1 10 FLASHECC R-10 1 0 R-0 9 8 RAMECC R-1 0 1 R-1 17 16 TF R-0

Figure 3-4. TMS470 Device ID Bit Allocation Register Table 3-12. TMS470 Device ID Bit Allocation Register Field Descriptions
Bit 31 Field CP15 0 1 30-17 16-13 PART NUMBER TF 0011 12 I/O VOLT 0 1 11 PP 0 1 10 FLASHECC 00 01 10 11 8 RAMECC 0 1 7-3 2-0 VERSION 101 Value Description This bit indicates the presence of coprocessor (CP15). No coprocessor present in the device. Coprocessor present in the device. These bits indicate the assigned device-specific part number. The assigned device-specific part number for the TMS470M device is 00000000011011. Technology family bit. These bits indicate the technology family (C05, F05, F035, C035). F035 I/O voltage bit. This bit identifies the I/O power supply. 3.3 V 5V Peripheral parity bit. This bit indicates whether parity is supported. No parity on peripheral. Parity on peripheral. Flash ECC bits. These bits indicate the level of error detection and correction on the flash memory. No error detection/correction. Program memory with parity. Program memory with ECC. Reserved RAM ECC bits. This bit indicates the presence of error detection and correction on the CPU RAM. RAM ECC not present. RAM ECC present. These bits identify the silicon version of the device. Bits 2:0 are set to 101 by default to indicate a platform device.

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3.12 Device Part Numbers


Table 3-13 lists all the available TMS470MF04207/TMS470MF03107 device configurations. Table 3-13. Device Part Numbers
PROGRAM MEMORY FLASH EEPROM X X PACKAGE TYPE 100-PIN LQFP X X TEMPERATURE RANGE -40C to 125C X X PbFREE/ GREEN (1) X X

DEVICE PART NUMBER

SAP PART NUMBER

TMS470MF04207PZQ TMS470MF03107PZQ (1)

S4MF04207SPZQQ1 S4MF03107SPZQQ1

RoHS compliant products are compatible with the current RoHS requirements for all six substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials, unless exempt. Pb-Free products are RoHS Compliant, plus suitable for use in higher temperature lead-free solder processes (typically 245 to 260C). Green products are RoHS and Pb-Free, plus also free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material).

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4 Device Operating Conditions


4.1 Absolute Maximum Ratings Over Operating Free-Air Temperature Range, Q Version (1)
VCC (2) VCCIOR, VCCAD, VCC (Flash pump) All input pins IIK (VI < 0 or VI > VCCIOR) All pins, except ADIN[0:15] IIK (VI < 0 or VI > VCCIOR) ADIN[0:15] Q version Standard
(2)

Supply voltage range: Input voltage range:

-0.5 V to 2.1 V -0.5 V to 4.1 V -0.5 V to 4.1 V 20 mA 10 mA -40C to 125C -40C to 150C -65C to 150C

Input clamp current:

Operating free-air temperature range, TA: Operating junction temperature range, TJ: Storage temperature range, Tstg (1) (2)

Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only. Functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage values are with respect to their associated grounds.

4.2
VCCIOR VCC VCCAD VCCP VSS VSSAD TA TJ (1)

Device Recommended Operating Conditions (1)


MIN Digital I/O and internal regulator supply voltage Voltage regulator output voltage MibADC supply voltage Flash pump supply voltage Digital logic supply ground MibADC supply ground Operating free-air temperature Operating junction temperature All voltages are with respect to VSS, except VCCAD, which is with respect to VSSAD. Q version -0.1 -40 -40 3 1.40 3 3 NOM 3.3 1.55 3.3 3.3 0 0.1 125 150 MAX 3.6 1.70 3.6 3.6 UNIT V V V V V V C C

34

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4.3

Electrical Characteristics Over Recommended Operating Free-Air Temperature Range, Q Version (1) (2)
PARAMETER TEST CONDITIONS All inputs OSCIN All inputs (3) OSCIN IOL = IOL MAX IOL = 50 A Standard mode IOL = 50 A Impedance Control mode IOH = IOH MAX 0.8 VCCIOR VCCIOR -0.2 V 0.8 VCCIOR IOH = 50 A Standard mode IOH = 50 A Impedance Control mode 2 0.8 VCC 0.2 VCCIOR 0.2 V 0.2 VCCIOR
(3)

MIN 150 -0.3

TYP

MAX 0.8 0.2 VCC VCCIOR + 0.3

UNIT mV V V V

Vhys VIL VIH

Input hysteresis Low-level input voltage High-level input voltage

VOL

Low-level output voltage

VOH

High-level output voltage

IIC

Input clamp current (I/O pins) (4) IIH Pulldown

VI < VSSIO - 0.3 or VI > VCCIOR + 0.3 VI = VCCIOR VI = VSS No pullup or pulldown

-2 40 -190 -1

2 190 -40 1 4

mA

II

Input current (I/O pins)

IIL Pullup All other pins

IOL IOH ICC

Low-level output tcurrent High-level output current

Adaptive impedance VOL = VOL MAX 4 mA Buffer Adaptive impedance VOH = VOH MIN 4 mA Buffer HCLK = 80 MHz, VCLK = 80 MHz, VCC = 1.70 V (5) HCLK = 80 MHz, VCLK = 80 MHz, No DC load, VCCIOR = 3.6 V (5) (6) HCLK = 80 MHz, VCLK = 80 MHz, STCCLK = 80 MHz, No DC load, VCCIOR = 3.6 V (6) HCLK = 80 MHz, VCLK = 80 MHz, No DC load, VCCIOR = 3.6 V (6) -4

mA mA

VCC digital supply current (operating mode, internal regulator disabled) VCCIOR IO and digital supply current (operating mode, internal regulator enabled)

110 mA 115

155 mA

ICCIOR

VCCIOR IO and digital supply current (LBIST execution, internal regulator enabled) (7)

130

VCCIOR IO and digital supply current (MBIST execution, internal regulator enabled) (8)

(1) (2) (3) (4) (5) (6) (7) (8)

Source currents (out of the device) are negative while sink currents (into the device) are positive. "All frequencies" will include all specified device configuration frequencies. The VIL here does not apply to the OSCIN, OSCOUT and PORRST pins; the VIH here does not apply to the OSCIN, OSCOUT and RST pins; For RST and PORRST exceptions, see Section 5.1. Parameter does not apply to input-only or output-only pins. Maximum currents are measured using a system-level test case. This test case exercises all of the device peripherals concurrently (excluding MBIST and STC LBIST). I/O pins configured as inputs or outputs with no load. All pulldown inputs 0.2 V. All pullup inputs VCCIO - 0.2 V. ECLK output 2 MHz. LBIST current specified is peak current for the maximum supported operating clock (HCLK = 80 MHz) and STC CLK = HCLK. Lower current consumption can be achieved by configuring a slower STC Clock frequency. The current peak duration can last for the duration of 1 LBIST test interval. MBIST currents specified are for execution of MBIST on all RAMs in parallel. Lower current consumption can be achieved by sequenced execution of MBIST on each of the RAM spaces available. Device Operating Conditions 35 Submit Documentation Feedback Product Folder Link(s): TMS470MF04207 TMS470MF03107

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Electrical Characteristics Over Recommended Operating Free-Air Temperature Range, Q Version(1)(2) (continued)
PARAMETER ICCAD VCCAD supply current (operating mode) TEST CONDITIONS All frequencies, VCCAD = 3.6 V VCCP = 3.6 V read operation(5) ICCP VCCP pump supply current VCCP = 3.6 V program (9) VCCP = 3.6 V erase ICCTOTAL (10) CI CO VCCIOR + VCCAD + VCCP total digital supply current (operating mode, internal regulator enabled) Input capacitance Output capacitance HCLK = 80 MHz, VCLK = 80 MHz, No DC load, VCCIOR = 3.6 V(5)(6) 6 7 MIN TYP MAX 8 10 75 75 125 mA pF pF mA UNIT mA

(9) Assumes reading from one bank while programming a different bank. (10) Total device operating current is derived from the total ICCIOR, ICCAD, and ICCP in normal operating mode excluding MBIST and LBIST execution. It is expected that the total will be less than the sums of the values of the individual components due to statistical calculations involved in producing the specification values.

5 Peripheral Information and Electrical Specifications


5.1 RST and PORRST Timings
Table 5-1. Timing Requirements for PORRST (1)
(see Figure 5-1)
NO. VCCPORL VCCPORH VCCIOPORL VCCIOPORH VIL (2) VOH (3) VIL(PORRST) 3 5 6 7 8 9 10 11 tsu(PORRST)r tsu(VCCIOR)r th(PORRST)r tsu(PORRST)f th(PORRST)rio th(PORRST)d tsu(PORRST)fio tsu(VCCIO)f tf(PORRST) tf(RST) (1) (2) (3) VCC low supply level when RST becomes active VCC high supply level when RST becomes active VCCIO low supply level when PORRST must be active during power up VCCIO high supply level when PORRST must remain active during power up and become active during power down Low-level input voltage after VCCIOR > VCCIOPORH High-level output voltage after VCCIOR > VCCIOPORH Low-level input voltage of PORRST before VCCIOR > VCCIOPORL Setup time, PORRST active before VCCIOR > VCCIOPORL during power up Setup time, VCCIOR > VCCIOPORL before VCC > VCCPORL Hold time, PORRST active after VCC > VCCPORH Setup time, PORRST active before VCC VCCPORH during power down Hold time, PORRST active after VCCIOR > VCCIOPORH Hold time, PORRST active after VCCIOR < VCCIORPORL Setup time, PORRST active before VCC VCCIOPORH during power down Setup time, VCC < VCCPORE before VCCIO < VCCIOPORL Filter time PORRST, pulses less than MIN get filtered out; pulses greater than MAX generate a reset. Filter time RST, pulses less than MIN get filtered out; pulses greater than MAX generate a reset. 0 0 1 8 1 0 0 0 30 40 185 150 0.8 VCCIOR 0.5 3.0 0.2 VCCIOR MIN 1.30 1.80 1.1 MAX UNIT V V V V V V V ms ms ms s ms ms ns ns ns ns

When the VCC timing requirements for PORRST are satisfied, there are no timing requirements for VCCP. Corresponds to PORRST. Corresponds to RST.

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VCCIOR

VCCIOPORH 8

VCCIOR

VCCIOPORH 11

VCC

VCCPORH 6

7 6

VCC 7 10

VCCPORH

VCCIOPORL VCCPORL 5 PORRST 3 VIL(PORRST) 9 VIL VIL VIL VIL VIL(PORRST) VCCPORL

VCCIOPORL

VCC (1.55 V) VCCP/VCCIOR (3.3 V) Note: VCC is provided by the on-chip voltage regulator during normal application run time. It is not recommended to use the device in an application with the Vreg disabled due to potential glitching issues; however, if used in this mode, the application should ensure that the specified voltage ranges for VCC are maintained.

Figure 5-1. PORRST Timing Diagram Table 5-2. Switching Characteristics Over Recommended Operating Conditions for RST and PORRST (1)
PARAMETER tv(RST) VCCIOPORL (1) Valid time, RST active after PORRST inactive Valid time, RST active (all others) Vccio low supply level when PORRST must be active during power-up and power-down MIN 1024tc(OSC) 8tc(VCLK) 1.1 MAX UNIT ns V

Specified values do NOT include rise/fall times. For rise and fall timings, see Table 5-13.

Table 5-3. Internal Voltage Regulator Specifications


PARAMETER tD(VCCIOR)0-3 tV(PORRST)L VCCIORmin(PORRST)f C(VCC)core ESR(max)core Delay time, input supply to ramp from 0 V to 3 V Valid time, PORRST active after input supply becomes 3.0 V Minimum input voltage, when PORRST must be made active during power down or brown out Capacitance distributed over core VCC pins for voltage regulator stability Total combined ESR of stabilization capacitors on core VCC pins MIN 12 1 3.0 1.2 0 6.0 0.75 MAX 1000 UNIT s ms V F

3V VCCIORmin(PORRST)f

tD(VCCIOR)0-3 VCC PORRST

tV(PORRST)L

Figure 5-2. PORRST Timing Requirements

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Table 5-4. VREG Recommended Operation Conditions


PARAMETER ICC VCC Load Rating CONDITIONS Normal mode, regulator active Off, enable forced off MIN 0 MAX 200 UNIT mA A

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5.2

PLL and Clock Specifications


Table 5-5. Timing Requirements for PLL Circuits Enabled or Disabled
PARAMETER MIN 5 50 15 15 MAX 20 UNIT MHz ns ns ns

f(OSC) tc(OSC) tw(OSCIL) tw(OSCIH)

Input clock frequency Cycle time, OSCIN Pulse duration, OSCIN low Pulse duration, OSCIN high

5.2.1

External Reference Resonator/Crystal Oscillator Clock Option


The oscillator is enabled by connecting the appropriate fundamental 5-20 MHz resonator/crystal and load capacitors across the external OSCIN and OSCOUT pins as shown in Figure 5-3(a). The oscillator is a single stage inverter held in bias by an integrated bias resistor. TI strongly encourages each customer to submit samples of the device to the resonator/crystal vendors for validation. Vendors are equipped to determine which load capacitors will best tune their resonator/crystal to the microcontroller device for optimum start-up and operation over temperature/voltage extremes.

5.2.2

External Clock Source


An external oscillator source can be used by connecting a 1.55-V clock signal to the OSCIN pin and leaving the OSCOUT pin unconnected (open) as shown in Figure 5-3(b).
OSCIN OSCOUT OSCIN OSCOUT

C1

(A)

Crystal

C2

(A)

External Clock Signal (toggling 0-1.55 V) (b)

(a)

A.

The values of C1 and C2 should be provided by the resonator/crystal vendor.

Figure 5-3. Recommended Crystal/Clock Connection

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5.2.3

Validated FMPLL Settings


The following table includes the validated FMPLL settings. Table 5-6. Validated FMPLL Settings
Mode OSCIN Frequency (MHz) 10 12 PLLCTL1 (1) 0x20048B00 0x20026100 0x20058B00 0x20055F00 0x20068B00 0x20036100 0x20078B00 0x20098B00 0x20049F00 0x20055F00 0x20059F00 0x20065F00 0x20069F00 0x20075F00 0x20079F00 0x20099F00 0x20049F00 0x20026300 0x20059F00 0x20067700 0x20069F00 0x20036300 0x20079F00 0x20099F00 PLLCTL2 (1) 0x00007800 0x00007C00 0x00007800 0x00007600 0x00007800 0x00007C00 0x00007800 0x00007800 0x00007800 0x00007400 0x00007800 0x00007400 0x00007800 0x00007400 0x00007800 0x00007800 0x00007600 0x00007800 0x00007600 0x00007400 0x00007600 0x00007800 0x00007600 0x00007600 80 64 56 FMPLL Output Modulation Frequency (MHz) Bandwidth (KHz) Modulation Depth

Non-Modulated (2)

14 16 20 10 12

Non-Modulated (2)

14 16 20 10 12

Non-Modulated (2)

14 16 20

(1) (2) 40

The recommended PLLCTL1 and PLLCTL2 values make no assumption of the intended use of ROS, BPOS, and ROF fields within the PLL control registers. For these settings, the application should set these as appropriate for the specific application requirements. Non-Modulated settings provided show FM related bit fields as 0. When initializing the PLLCTL registers for non-modulated use, the FM related bit fields should be masked such that reset/default values are retained. Peripheral Information and Electrical Specifications Copyright 2012, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Link(s): TMS470MF04207 TMS470MF03107

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Table 5-6. Validated FMPLL Settings (continued)


Mode OSCIN Frequency (MHz) PLLCTL1 (1) 0x20048B00 10 0x20048B00 0x20048B00 0x20048B00 0x20058B00 12 0x20058B00 0x20058B00 0x20058B00 0x20068B00 Frequency Modulated 14 0x20068B00 0x20068B00 0x20068B00 0x20078B00 16 0x20078B00 0x20078B00 0x20078B00 0x20098B00 20 0x20098B00 0x20098B00 0x20098B00 0x20049F00 10 0x20049F00 0x20049F00 0x20049F00 0x20059F00 12 0x20059F00 0x20059F00 0x20059F00 0x20069F00 Frequency Modulated 14 0x20069F00 0x20069F00 0x20069F00 0x20079F00 16 0x20079F00 0x20079F00 0x20079F00 0x20099F00 20 0x20099F00 0x20099F00 0x20099F00 PLLCTL2 (1) 0x8300B844 0x8300B889 0x82409859 0x824098B2 0x8300B844 0x8300B889 0x82409859 0x824098B2 0x8300B844 0x8300B889 0x82409859 0x824098B2 0x8300B844 0x8300B889 0x82409859 0x824098B2 0x8300B844 0x8300B889 0x82409859 0x824098B2 0x8300C83B 0x8300C878 0x8240A84D 0x8240A89C 0x8300C83B 0x8300C878 0x8240A84D 0x8240A89C 0x8300C83B 0x8300C878 0x8240A84D 0x8240A89C 0x8300C83B 0x8300C878 0x8240A84D 0x8240A89C 0x8300C83B 0x8300C878 0x8240A84D 0x8240A89C 64 100 76.92 100 76.92 100 56 100 76.92 100 76.92 100 76.92 100 76.92 100 76.92 FMPLL Output Modulation Frequency (MHz) Bandwidth (KHz) 76.92 100 76.92 100 76.92 Modulation Depth 0.50% 1.00% 0.50% 1.00% 0.50% 1.00% 0.50% 1.00% 0.50% 1.00% 0.50% 1.00% 0.50% 1.00% 0.50% 1.00% 0.50% 1.00% 0.50% 1.00% 0.50% 1.00% 0.50% 1.00% 0.50% 1.00% 0.50% 1.00% 0.50% 1.00% 0.50% 1.00% 0.50% 1.00% 0.50% 1.00% 0.50% 1.00% 0.50% 1.00%

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Table 5-6. Validated FMPLL Settings (continued)


Mode OSCIN Frequency (MHz) PLLCTL1 (1) 0x20049F00 10 0x20049F00 0x20049F00 0x20049F00 0x20059F00 12 0x20059F00 0x20059F00 0x20059F00 0x20069F00 Frequency Modulated 14 0x20069F00 0x20069F00 0x20069F00 0x20079F00 16 0x20079F00 0x20079F00 0x20079F00 0x20099F00 20 0x20099F00 0x20099F00 0x20099F00 PLLCTL2 (1) 0x8300C63B 0x8300C678 0x8240A64D 0x8240A69C 0x8300C63B 0x8300C678 0x8240A64D 0x8240A69C 0x8300C63B 0x8300C678 0x8240A64D 0x8240A69C 0x8300C63B 0x8300C678 0x8240A64D 0x8240A69C 0x8300C63B 0x8300C678 0x8240A64D 0x8240A69C 80 100 76.92 100 76.92 100 FMPLL Output Modulation Frequency (MHz) Bandwidth (KHz) 76.92 100 76.92 100 76.92 Modulation Depth 0.50% 1.00% 0.50% 1.00% 0.50% 1.00% 0.50% 1.00% 0.50% 1.00% 0.50% 1.00% 0.50% 1.00% 0.50% 1.00% 0.50% 1.00% 0.50% 1.00%

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5.2.4

LPO and Clock Detection


The LPOCLKDET module consists of a clock monitor (CLKDET) and 2 low-power oscillators (LPO): a low-frequency (LF) and a high-frequency (HF) oscillator. The CLKDET is a supervisor circuit for an externally supplied clock signal. In case the externally supplied clock frequency falls out of a frequency window, the clock detector flags this condition and switches to the HF LPO clock (limp mode). The OSCFAIL flag and clock switch-over remain, regardless of the behavior of the oscillator clock signal. The only way OSCFAIL can be cleared (and OSCIN be again the driving clock) is a power-on reset. Table 5-7. LPO and Clock Detection
PARAMETER MIN 1.5 20.0 7.6 50 7.6 12 90 12 TYP MAX 5.0 50.0 14.0 124 14.0 UNIT MHz MHz MHz kHz MHz Lower threshold Higher threshold

invalid frequency limp mode frequency (HFosc) LFosc frequency HFosc frequency

guaranteed fail

lower threshold

guaranteed pass

upper threshold

guaranteed fail

1.5

5.0

20.0

50.0

f (MHz)

Figure 5-4. LPO and Clock Detection

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5.2.5

Device Clock Domains Block Diagram


The clock domains block diagram and GCM clock source assignments are given in Figure 5-5 and Table 5-8.

OSCOUT OSCIN (5-20 MHz)

OSC /1..64

0 FMZPLL x92..184 /1..8 LF OSC HF OSC /1,2,4,8 /1..16 VCLK (to Peripherals) /1..16
(A) (A)

RCLK

/1..32

1 4 5

GCLK (to CPU)

(A)

HCLK (to SYSTEM)

(A)

LPO

RTICLK (to RTI)

(A)

VCLK2 (to HET)

AVCLK1 /1,2..256 /1,..1024 /1,2..65536 /1,2..65536 SPI Baud Rate VCLK/2 LIN Baud Rate 20 kB/s SCI Baud Rate 115.2 kB/s LIN/SCI ADCLK 20 MHz LRP 0 5 /2 ..2 HET Loop CLK HET CAN Baud Rate 1M Baud 8-MHz OSCIN CAN (DCAN1) HET HiRes CLK /2,3..2
24

/1,2..256

HRP /1..64

Prop_ seg

Phase_ seg2

ECLK1 20 MHz

ECLK2 20 MHz

External Clock Phase_ seg1

MibSPI

ADC

A.

See Table 5-9.

Figure 5-5. Device Clock Domains Block Diagram

Table 5-8. GCM Clock Source Assignments


GCM SOURCE NUMBER 0 1 2 3 4 5 6 7 CLOCK SOURCE OSCIN F035 FMzPLL Reserved Reserved LF OSC HF OSC Reserved Reserved

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Table 5-9. Switching Characteristics Over Recommended Operating Conditions for Clocks (1) (2) (3) (4) (5)
PARAMETER f(HCLK) System clock frequency System clock frequency Flash programming/erase Peripheral VBUS clock frequency External clock output frequency for ECP Module RCLK - Frequency out of PLL macro into R-divider (Post ODPLL divider) Pipeline mode enabled tc(HCLK) Cycle time, system clock Cycle time, system clock - Flash programming/erase Cycle time, peripheral clock Cycle time, ECP module external clock output Cycle time, RCLK minimum input cycle time out of PLL macro into R-divider Pipeline mode disabled, 0 flash wait states 12.50 35.71 12.50 tc(HCLK) 50.0 6.90 ns TEST CONDITIONS (6) Pipeline mode enabled Pipeline mode disabled, 0 flash wait states MIN MAX 80 28 80 f(HCLK) 20 145 MHz UNIT

f(PROG/ERASE) f(VCLK/VCLK2) f(ECLK) f(RCLK)

MHz MHz MHz MHz

tc(PROG/ERASE) tc(VCLK/VCLK2) tc(ECLK) tc(RCLK) (1)

ns ns ns ns

(2) (3) (4) (5) (6)

f(HCLK) = f(OSC) / NR *NF /ODPLL/PLLDIV; for details, see the PLL documentation. TI strongly recommends selection of NR and NF parameters such that NF 120 and (f(OSC) / NR *NF) 400. f(VCLK) = f(HCLK) / X, where X = {1,2,3,4,5,6,7,8,9,10,11,12,13,14,15,16}. X is the peripheral VBUS clock divider ratio determined by the VCLKR[3:0] bits in the SYS module. Enabling FM mode can reduce maximum rated operating frequencies. The degree of impact is application-specific and the specific settings, as well as the impact of the settings, should be discussed and agreed upon prior to using FM modes. Use of FM modes do not impact the maximum rated external clock output, f(ECLK), for the ECP module. Pipeline mode enabled or disabled is determined by FRDCNTL[2:0]. f(ECLK) = f(VCLK) / N, where N = {1 to 65536}. N is the ECP prescale value defined by the ECPCTRL.[15:0] register bits in the ECP module. ECLK output will increase radiated emissions within the system that is used. Rated emissions at the device level do not include emissions due to ECLK output. All test conditions assume FM Mode disabled and RAM ECC enabled with 0 waitstates for RAM.
RAM Address Waitstates 0MHz Data Waitstates 0MHz Flash Address Waitstates 0MHz Data Waitstates 0MHz 0 28MHz 1 56MHz 2 f(HCLK) 0 f(HCLK) 0 f(HCLK) 0 f(HCLK)

Figure 5-6. Timing - Wait States NOTE


If FMzPLL frequency modulation is enabled, special care must be taken to ensure that the maximum system clock frequency f(HCLK) and peripheral clock frequency f(VCLK) are not exceeded. The speed of the device clocks may need be derated to accommodate the modulation depth when FMzPLL frequency modulation is enabled.

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5.2.5.1

ECLK Specification

Table 5-10. Switching Characteristics Over Recommended Operating Conditions for External Clocks (1) (2)
(see Figure 5-7)
NO. 1 2 (1) (2) tw(EOL) tw(EOH) PARAMETER Pulse duration, ECLK low Pulse duration, ECLK high TEST CONDITIONS Under all prescale factor combinations (X and N) Under all prescale factor combinations (X and N) MIN 0.5tc(ECLK) - tf 0.5tc(ECLK) - tr MAX UNIT ns ns

X = {1,2,3,4,5,6,7,8,9,10,11,12,13,14,15,16}. X is the VBUS interface clock divider ratio determined by the CLKCNTL.[19:16] bits in the SYS module. N = {1 to 65536}. N is the ECP prescale value defined by the ECPCNTL.[15:0] register bits in the SYS module.
2 ECLK 1

Figure 5-7. ECLK Timing Diagram

5.2.6

TEST Pin Glitch Filter Timing


Table 5-11. Test Pin Glitch Filter Timing

NO. tf(TEST)

PARAMETER Filter time TEST, high pulses less than MIN will be filtered out.

MIN 40

MAX

UNIT ns

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5.2.7

JTAG Timing

Table 5-12. JTAG Scan Interface Timing (JTAG Clock specification 10-MHz and 50-pF Load on TDO Output)
(see Figure 5-8
NO. 1 2 3 4 5 tc(JTAG) tsu(TDI/TMS - TCKr) th(TCKr -TDI/TMS) th(TCKf -TDO) td(TCKf -TDO) Cycle time, JTAG low and high period Setup time, TDI, TMS before TCK rise (TCKr) Hold time, TDI, TMS after TCKr Hold time, TDO after TCKf Delay time, TDO valid after TCK fall (TCKf) MIN 50 5 5 5 45 MAX UNIT ns ns ns ns ns

TCK 1 TMS TDI 2 3 1

TDO 4 5

Figure 5-8. JTAG Scan Timings

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5.2.8

Output Timings
Table 5-13. Switching Characteristics for Output Timings Versus Load Capacitance (CL) (1)

(see Figure 5-9)


PARAMETER CL = 15 pF tr Adaptive impedance 4 mA pins CL = 50 pF CL = 100 pF CL = 150 pF CL = 15 pF tf Adaptive impedance 4 mA pins CL = 50 pF CL = 100 pF CL = 150 pF (1) MAX 4 8 15 21 5 8 12 17 ns ns UNIT

Peripheral output timings given within this document are measured in either standard buffer or impedance control mode.
tr tf 80% Output 20% 20% 0 80% VCCIO

Figure 5-9. CMOS-Level Outputs

5.2.9

Input Timings
Table 5-14. Timing Requirements for Input Timings (1)

(see Figure 5-10)


MIN tpw (1) Input minimum pulse width tc(VCLK) = peripheral VBUS clock cycle time = 1 / f(VCLK).
tpw 80% Input 20% 20% 0 80% VCC

MAX

UNIT ns

tc(VCLK) + 10

Figure 5-10. CMOS-Level Inputs

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5.2.10 Flash Timings


Table 5-15. Timing Requirements for Program Flash
PARAMETER TEST CONDITIONS From Sleep Mode to Standby Mode From Standby Mode to Active Mode From Sleep Mode to Standby Mode From Standby Mode to Active Mode MIN 20 1 s 1.9 0.1 37.5 3.7 4.3 1.5 300 29.5 34.4 15 1000 (2) 25000 (2) (3) s s s cycles cycles NOM MAX UNIT

Flash pump stabilization time tacc_delay Flash bank stabilization time

tprog(32-bit) tprog(Total) terase(sector)

Half-word (32-bit) programming time 384k-byte programming time (1) 448k-byte programming time (1) Sector erase time Write/erase cycles at TA = -40 to 125C with 15-year Data Retention requirement

Nwec

Write/erase cycles at TA = -40 to 125C EEPROM emulation requirement for 16k flash sectors in Bank 1

(1) (2) (3)

tprog(Total) programming time includes overhead of state machine, but does not include data transfer time. Flash write/erase cycles and data retention specifications are based on a validated implementation of the TI flash API. Non-TI flash API implementation is not supported. For detailed description see the F035 Flash Validation Procedure (SPNA127). Flash write/erase cycle and data retention specifications are based on an assumed distribution of write/erase cycles over the life of the product including an even distribution over the rated temperature range and time between cycles. The EEPROM emulation bank has been qualified as outlined in the JEDEC specification JESD22-A117C.

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5.3

SPIn Master Mode Timing Parameters


Table 5-16. SPIn Master Mode External Timing Parameters (CLOCK PHASE = 0, SPInCLK = output, SPInSIMO = output, and SPInSOMI = input) (1) (2) (3)

(see Figure 5-11 and Figure 5-12)


NO. 1 2 (5) tc(SPC)M tw(SPCH)M tw(SPCL)M tw(SPCL)M 3 (5) tw(SPCH)M td(SIMO-SPCL)M 4 (5) td(SIMO-SPCH)M tv(SPCL-SIMO)M 5
(5)

MIN Cycle time, SPICLK


(4)

MAX 256tc(VCLK) 0.5tc(SPC)M + 5 0.5tc(SPC)M + 5 0.5tc(SPC)M + 5 0.5tc(SPC)M + 5

UNIT

90 0.5tc(SPC)M - tr-8 0.5tc(SPC)M - tf-8 0.5tc(SPC)M - tf-8 0.5tc(SPC)M - tr-8 0.5tc(SPC)M - 10 0.5tc(SPC)M - 10 0.5tc(SPC)M - tf(SPC)-5 0.5tc(SPC)M - tr(SPC)-5 tr(SPC)+4 tf(SPC)+4 10 10 (C2TDELAY+CSHOLD+ 2)*tc(VCLK) - tf(SPICS) + tr(SPICLK)-21 (C2TDELAY+CSHOLD+ 2)*tc(VCLK) - tf(SPICS) + tf(SPICLK)-21 0.5*tc(SPC)M +T2CDELAY*tc(VCLK) + tc(VCLK) - tf(SPICLK) + tr(SPICS)-4 0.5*tc(SPC)M +T2CDELAY*tc(VCLK) + tc(VCLK) - tr(SPICLK) + tr(SPICS)-4 C2TDELAY * tc(VCLK) tf(SPICS)-25

Pulse duration, SPICLK high (clock polarity = 0) Pulse duration, SPICLK low (clock polarity = 1) Pulse duration, SPICLK low (clock polarity = 0) Pulse duration, SPICLK high (clock polarity = 1) Delay time, SPISIMO data valid before SPICLK low (clock polarity = 0) Delay time, SPISIMO data valid before SPICLK high (clock polarity = 1) Valid time, SPISIMO data valid (clock polarity = 0) Valid time, SPISIMO data valid (clock polarity = 1) Setup time, SPISOMI before SPICLK low (clock polarity = 0) Setup time, SPISOMI before SPICLK high (clock polarity = 1) Hold time, SPISOMI data valid after SPICLK low (clock polarity = 0) Hold time, SPISOMI data valid after SPICLK high (clock polarity = 1) Setup time CS active until SPICLK high (clock polarity = 0)

tv(SPCH-SIMO)M tsu(SOMI-SPCL)M 6
(5)

tsu(SOMI-SPCH)M th(SPCL-SOMI)M 7
(5)

ns

th(SPCH-SOMI)M

8 (5) (6)

tC2TDELAY Setup time CS active until SPICLK low (clock polarity = 1)

(C2TDELAY+CSHOLD+ 2)*tc(VCLK) - tf(SPICS) + tr(SPICLK)+6 (C2TDELAY+CSHOLD+ 2)*tc(VCLK) - tf(SPICS) + tf(SPICLK)+6 0.5*tc(SPC)M +T2CDELAY*tc(VCLK) + tc(VCLK) - tf(SPICLK) + tr(SPICS)+17 0.5*tc(SPC)M +T2CDELAY*tc(VCLK) + tc(VCLK) - tr(SPICLK) + tr(SPICS)+17 C2TDELAY * tc(VCLK) ns

9 (5) (6) Hold time SPICLK low until CS inactive (clock polarity = 0) tT2CDELAY Hold time SPICLK high until CS inactive (clock polarity = 1) 10 (1) (2) (3) (4) (5) (6) tSPIENA SPIENAn sample point

The MASTER bit (SPIGCR1.0) is set and the CLOCK PHASE bit (SPIFMTx.16) is clear. tc(VCLK) = interface clock cycle time = 1 / f(VCLK). For rise and fall timings, see Table 5-13. When the SPI is in Master mode, the following must be true: For PS values from 1 to 255: t (PS +1)tc(VCLK) 90 ns, where PS is the prescale value set in the SPIFMTx.[15:8] register bits. For PS values of 0: tc(SPC)M = 2tc(VCLK) 90 ns. The active edge of the SPInCLK signal referenced is controlled by the CLOCK POLARITY bit (SPIFMTx.17). C2TDELAY and T2CDELAY are programmed in the SPIDELAY register.

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1 SPICLK (clock polarity = 0) 2 3 SPICLK (clock polarity = 1) 4 5 SPISIMO Master Out Data is Valid

6 7 Master In Data Must Be Valid

SPISOMI

Figure 5-11. SPI Master Mode External Timing (CLOCK PHASE = 0)


SPICLK (clock polarity = 0)

SPICLK (clock polarity = 1)

SPISIMO 8

Master Out Data is Valid

9 SPICSn 10 SPIENAn

Figure 5-12. SPI Master Mode Chip Select Timing (CLOCK PHASE = 0)

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Table 5-17. SPIn Master Mode External Timing Parameters (CLOCK PHASE = 1, SPInCLK = output, SPInSIMO = output, and SPInSOMI = input) (1) (2) (3)
(see Figure 5-13 and Figure 5-14)
NO. 1 2 (5) tc(SPC)M tw(SPCH)M tw(SPCL)M tw(SPCL)M 3 (5) tw(SPCH)M tv(SIMO-SPCH)M 4
(5)

MIN Cycle time, SPICLK


(4)

MAX 256tc(VCLK) 0.5tc(SPC)M + 5 0.5tc(SPC)M + 5 0.5tc(SPC)M + 5 0.5tc(SPC)M + 5

UNIT

90 0.5tc(SPC)M - tr-8 0.5tc(SPC)M - tf-8 0.5tc(SPC)M - tf-8 0.5tc(SPC)M - tr-8 0.5tc(SPC)M - 10 0.5tc(SPC)M - 10 0.5tc(SPC)M - tr(SPC)-5 0.5tc(SPC)M - tf(SPC)-5 tr(SPC)+4

Pulse duration, SPICLK high (clock polarity = 0) Pulse duration, SPICLK low (clock polarity = 1) Pulse duration, SPICLK low (clock polarity = 0) Pulse duration, SPICLK high (clock polarity = 1) Valid time, SPISIMO data valid before SPICLK high (clock polarity = 0) Valid time, SPISIMO data valid before SPICLK low (clock polarity = 1) Valid time, SPISIMO data valid after SPICLK high (clock polarity = 0) Valid time, SPISIMO data valid after SPICLK low (clock polarity = 1) Setup time, SPISOMI before SPICLK high (clock polarity = 0) Setup time, SPISOMI before SPICLK low (clock polarity = 1) Hold time, SPISOMI data valid after SPICLK high (clock polarity = 0) Hold time, SPISOMI data valid after SPICLK low (clock polarity = 1) Setup time CS active until SPICLK high (clock polarity = 0)

tv(SIMO-SPCL)M tv(SPCH-SIMO)M 5
(5)

tv(SPCL-SIMO)M tsu(SOMI-SPCH)M 6
(5)

ns tf(SPC)+4 10 10 0.5tc(SPC)M+(C2TDELAY +CSHOLD+2)*tc(VCLK)tf(SPICS) + tr(SPICLK)-21 0.5tc(SPC)M+(C2TDELAY +CSHOLD+2)*tc(VCLK) tf(SPICS) + tf(SPICLK)-21 T2CDELAY*tc(VCLK) + tc(VCLK) - tf(SPICLK) + tr(SPICS)-4 T2CDELAY*tc(VCLK) + tc(VCLK) - tr(SPICLK) + tr(SPICS)-4 C2TDELAY * tc(VCLK) tf(SPICS)-25 0.5tc(SPC)M+(C2TDELAY +CSHOLD+2)*tc(VCLK) tf(SPICS) + tr(SPICLK)+6 0.5tc(SPC)M+(C2TDELAY +CSHOLD+2)*tc(VCLK) tf(SPICS) + tf(SPICLK)+6 T2CDELAY*tc(VCLK) + tc(VCLK) - tf(SPICLK) + tr(SPICS)+17 T2CDELAY*tc(VCLK) + tc(VCLK) - tr(SPICLK) + tr(SPICS)+17 C2TDELAY * tc(VCLK) ns

tsu(SOMI-SPCL)M th(SPCH-SOMI)M 7
(5)

th(SPCL-SOMI)M

8 (5) (6)

tC2TDELAY Setup time CS active until SPICLK low (clock polarity = 1) Hold time SPICLK low CS until inactive (clock polarity = 0)

9 (5) (6)

tT2CDELAY Hold time SPICLK high until CS inactive (clock polarity = 1)

10 (7) (1) (2) (3) (4) (5) (6) (7)

tSPIENA

SPIENAn Sample Point

The MASTER bit (SPIGCR1.0) is set and the CLOCK PHASE bit (SPIFMTx.16) is clear. tc(VCLK) = interface clock cycle time = 1 / f(VCLK). For rise and fall timings, see Table 5-13. When the SPI is in Master mode, the following must be true: For PS values from 1 to 255: t (PS +1)tc(VCLK) 90 ns, where PS is the prescale value set in the SPIFMTx.[15:8] register bits. For PS values of 0: tc(SPC)M = 2tc(VCLK) 90 ns. The active edge of the SPInCLK signal referenced is controlled by the CLOCK POLARITY bit (SPIFMTx.17). C2TDELAY and T2CDELAY is programmed in the SPIDELAY register. C2TDELAY and T2CDELAY is programmed in the SPIDELAY register.

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SPICLK (clock polarity = 0) 2 3

SPICLK (clock polarity = 1) 4 5 SPISIMO Master Out Data is Valid Data Valid

6 7 Master In Data Must Be Valid

SPISOMI

Figure 5-13. SPI Master Mode External Timing (CLOCK PHASE = 1)


SPICLK (clock polarity = 0)

SPICLK (clock polarity = 1)

SPISIMO 8

Master Out Data is Valid

9 SPICSn 10 SPIENAn

Figure 5-14. SPI Master Mode Chip Select timing (CLOCK PHASE = 1)

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5.4

SPIn Slave Mode Timing Parameters


Table 5-18. SPIn Slave Mode External Timing Parameters (CLOCK PHASE = 0, SPInCLK = input, SPInSIMO = input, and SPInSOMI = output) (1) (2) (3) (4)

(see Figure 5-15 and Figure 5-16)


NO. 1 2 (6) 3 (6) 4 (6) tc(SPC)S tw(SPCH)S tw(SPCL)S tw(SPCL)S tw(SPCH)S td(SPCH-SOMI)S td(SPCL-SOMI)S tv(SPCH-SOMI)S 5
(6)

MIN Cycle time, SPInCLK


(5)

MAX

UNIT

90 30 30 30 30 trf(SOMI)+17 trf(SOMI)+17 0 0 5 5 6 6 1.5tc(VCLK) 1.5tc(VCLK) tf(ENAn) 2.5tc(VCLK)+ tr(ENAn)+20 2.5tc(VCLK)+ tr(ENAn)+20 tc(VCLK)+ tf(ENAn)+18 ns

Pulse duration, SPInCLK high (clock polarity = 0) Pulse duration, SPInCLK low (clock polarity = 1) Pulse duration, SPInCLK low (clock polarity = 0) Pulse duration, SPInCLK high (clock polarity = 1) Delay time, SPInCLK high to SPInSOMI valid (clock polarity = 0) Delay time, SPInCLK low to SPInSOMI valid (clock polarity = 1) Valid time, SPInSOMI data valid after SPInCLK high (clock polarity = 0) Valid time, SPInSOMI data valid after SPInCLK low (clock polarity = 1) Setup time, SPInSIMO before SPInCLK low (clock polarity = 0) Setup time, SPInSIMO before SPInCLK high (clock polarity = 1) Valid time, SPInSIMO data valid after SPInCLK low (clock polarity = 0) Valid time, SPInSIMO data valid after SPInCLK high (clock polarity = 1) Delay time, SPIENAn high after last SPICLK low (clock polarity = 0) Delay time, SPIENAn high after last SPICLK high (clock polarity = 1) Delay time, SPIENAn low after SPICSn low (if new data has been written to the SPI buffer)

tv(SPCL-SOMI)S 6 (6) tsu(SIMO-SPCL)S tsu(SIMO-SPCH)S tv(SPCL-SIMO)S 7


(6)

tv(SPCH-SIMO)S td(SPCL-SENAH)S 8 td(SPCH-SENAH)S 9 (1) (2) (3) (4) (5) (6) td(SCSL-SENAL)S

ns

ns

The MASTER bit (SPIGCR1.0) is clear and the CLOCK PHASE bit (SPIFMTx.16) is clear. When the SPI is in Slave mode, the following must be true: tc(SPC)S > 2tc(VCLK) and tc(SPC)S 90 ns. For rise and fall timings, see Table 5-13. tc(VCLK) = interface clock cycle time = 1 / f(VCLK). When the SPI is in Slave mode, the following must be true: tw(SPCL)S > tc(VCLK), tw(SPCL)S 30, tw(SPCH)S > tc(VCLK) ns and tw(SPCH)S 30 ns. The active edge of the SPInCLK signal referenced is controlled by the CLOCK POLARITY bit (SPIFMTx.17).

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1 SPICLK (clock polarity = 0) 2 3 SPICLK (clock polarity = 1)

SPISOMI

SPISOMI Data Is Valid 6 7

SPISIMO

SPISIMO Data Must Be Valid

Figure 5-15. SPI Slave Mode External Timing (CLOCK PHASE = 0)


SPICLK (clock polarity = 0)

SPICLK (clock polarity = 1) 8 SPIENAn 9 SPICSn

Figure 5-16. SPI Slave Mode Enable Timing (CLOCK PHASE = 0)

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Table 5-19. SPIn Slave Mode External Timing Parameters (CLOCK PHASE = 1, SPInCLK = input, SPInSIMO = input, and SPInSOMI = output) (1) (2) (3) (4)
(see Figure 5-17 and Figure 5-18)
NO. 1 2 (6) 3 (6) tc(SPC)S tw(SPCH)S tw(SPCL)S tw(SPCL)S tw(SPCH)S td(SPCH-SOMI)S 4
(6)

MIN Cycle time, SPInCLK


(5)

MAX

UNIT

90 30 30 30 30 trf(SOMI)+17 trf(SOMI)+17 0 0 5 5 6 6 1.5tc(VCLK) 1.5tc(VCLK) tf(ENAn) tc(VCLK) 2.5tc(VCLK)+ tr(ENAn)+20 2.5tc(VCLK)+ tr(ENAn)+20 tc(VCLK)+ tf(ENAn)+18 2tc(VCLK)+ trf(SOMI)+17 ns

Pulse duration, SPInCLK high (clock polarity = 0) Pulse duration, SPInCLK low (clock polarity = 1) Pulse duration, SPInCLK low (clock polarity = 0) Pulse duration, SPInCLK high (clock polarity = 1) Delay time, SPInSOMI data valid after SPInCLK high (clock polarity = 0) Delay time, SPInSOMI data valid after SPInCLK low (clock polarity = 1) Valid time, SPInCLK high after SPInSOMI data valid (clock polarity = 0) Valid time, SPInCLK low after SPInSOMI data valid (clock polarity = 1) Setup time, SPInSIMO before SPInCLK high (clock polarity = 0) Setup time, SPInSIMO before SPInCLK low (clock polarity = 1) Valid time, SPInSIMO data valid after SPInCLK high (clock polarity = 0) Valid time, SPInSIMO data valid after SPInCLK low (clock polarity = 1) Delay time, SPIENAn high after last SPICLK high (clock polarity = 0) Delay time, SPIENAn high after last SPICLK low (clock polarity = 1) Delay time, SPIENAn low after SPICSn low (if new data has been written to the SPI buffer) Delay time, SOMI valid after SPICSn low (if new data has been written to the SPI buffer)

td(SPCL-SOMI)S tv(SOMI-SPCH)S 5 (6) tv(SOMI-SPCL)S 6 (6) tsu(SIMO-SPCH)S tsu(SIMO-SPCL)S tv(SPCH-SIMO)S 7


(6)

tv(SPCL-SIMO)S td(SPCH-SENAH)S 8 td(SPCL-SENAH)S 9 10 (1) (2) (3) (4) (5) (6) td(SCSL-SENAL)S td(SCSL-SOMI)S

ns

ns ns

The MASTER bit (SPInCTRL2.3) is cleared and the CLOCK PHASE bit (SPInCTRL2.0) is set. When the SPI is in Slave mode, the following must be true: tc(SPC)S > 2tc(VCLK) and tc(SPC)S 90 ns. For rise and fall timings, see Table 5-13. tc(VCLK) = interface clock cycle time = 1 /f(VCLK). When the SPI is in Slave mode, the following must be true: tw(SPCL)S > tc(VCLK), tw(SPCL)S 30, tw(SPCH)S > tc(VCLK) ns and tw(SPCH)S 30 ns. The active edge of the SPInCLK signal referenced is controlled by the CLOCK POLARITY bit (SPIFMTx.17).

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1 SPICLK (clock polarity = 0) 2 3 SPICLK (clock polarity = 1) 4 5 SPISOMI SPISOMI Data is Valid Data Valid

6 7 SPISIMO Data Must Be Valid

SPISIMO

Figure 5-17. SPI Slave Mode External Timing (CLOCK PHASE = 1)


SPICLK (clock polarity = 0)

SPICLK (clock polarity = 1) 8 SPIENAn 9 SPICSn 10

SPISOMI

Slave Out is Valid

Figure 5-18. SPI Slave Mode Enable Timing (CLOCK PHASE = 1)

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5.5

CAN Controller (DCANn) Mode Timings


Table 5-20. Dynamic Characteristics for the CANnSTX and CANnSRX Pins
PARAMETER MIN MAX 15 6 UNIT ns ns

td(CANnSTX) td(CANnSRX) (1)

Delay time, transmit shift register to CANnSTX pin (1) Delay time, CANnSRX pin to receive shift register

These values do not include rise/fall times of the output buffer.

5.6

High-End Timer (HET) Timings


Table 5-21. Dynamic Characteristics for the HET Pins
PARAMETER MIN 1/f(VCLK2) 1/f(VCLK2)
(2)

MAX

UNIT ns ns

topw(HET) tipw(HET) (1) (2)

Output pulse width, this is the minimum pulse width that can be generated (1) Input pulse width, this is the minimum pulse width that can be captured

topw(HET)min = HRP(min) = hr(min) / VCLK2. tipw(HET) = LRP(min) = hr(min) * lr(min) / VCLK2.

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5.7

Multi-Buffered A-to-D Converter (MibADC)


The multi-buffered A-to-D converter (MibADC) has a separate power bus for its analog circuitry that enhances the A-to-D performance by preventing digital switching noise on the logic circuitry which could be present on VSS and VCC from coupling into the A-to-D analog stage. All A-to-D specifications are given with respect to ADREFLO unless otherwise noted. Resolution Monotonic Output conversion code 10 bits (1024 values) Assured 00h to 3FFh [00 for VAI ADREFLO; 3FF for VAI ADREFHI]

Table 5-22. MibADC Recommended Operating Conditions (1)


MIN ADREFHI ADREFLO VAI IAIC (1) (2) A-to-D high -voltage reference source A-to-D low-voltage reference source Analog input voltage Analog input clamp current (2) (VAI < VSSAD - 0.3 or VAI > VCCAD + 0.3) 3.0 VSSAD ADREFLO -2 MAX VCCAD 0.3 ADREFHI 2 UNIT V V V mA

For VCCAD and VSSAD recommended operating conditions, see . Input currents into any ADC input channel outside the specified limits could affect conversion results of other channels.

Table 5-23. MibADC Operating Characteristics Over Full Range of Recommended Operating Conditions (1)
PARAMETER Rmux Rsamp Cmux Csamp IAIL IADREFHI CR EDNL Analog input mux on-resistance ADC sample switch on-resistance Input mux capacitance ADC sample capacitance Analog input leakage current ADREFHI input current Conversion range over which specified accuracy is maintained Differential non-linearity error DESCRIPTION/CONDITIONS See Figure 5-19 See Figure 5-19 See Figure 5-19 See Figure 5-19 Input leakage per ADC input pin ADREFHI = 3.6 V, ADREFLO = VSSAD ADREFHI - ADREFLO Difference between the actual step width and the ideal value (see Figure 5-20). Maximum deviation from the best straight line through the MibADC. MibADC transfer characteristics, excluding the quantization error (see Figure 5-21). Maximum value of the difference between an analog value and the ideal midstep value (see Figure 5-22). 3 -200 MIN NOM 125 150 MAX 1.5K 1.5K 16 8 200 5 3.6 2 UNIT pF pF nA mA V LSB

EINL

Integral non-linearity error

LSB

ETOT

Total error/Absolute accuracy

LSB

(1)

1 - LSB = (ADREFHI ADREFLO)/ 210 for the MibADC.

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5.7.1

MibADC Input Model

Pin

Smux Rmux

Pin

Smux IAIL

Rmux IAIL

Pin

Smux IAIL

Rmux IAIL

Ssamp Rsamp Cmux Csamp

Figure 5-19. MibADC Input Equivalent Circuit Table 5-24. Multi-Buffer ADC Timing Requirements
PARAMETER tc(ADCLK) td(SH) td(C) td(SHC) (1) (1) Cycle time, MibADC clock Delay time, sample and hold time Delay time, conversion time Delay time, total sample/hold and conversion time MIN 0.05 1 0.55 1.55 NOM MAX UNIT s s s s

This is the minimum sample/hold and conversion time that can be achieved. These parameters are dependent on many factors.

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The differential non-linearity error shown in Figure 5-20 (sometimes referred to as differential linearity) is the difference between an actual step width and the ideal value of 1 LSB.

0 ... 110 0 ... 101

Digital Output Code

0 ... 100 0 ... 011 1 LSB 0 ... 010 0 ... 001 Differential Linearity Error (-1/2 LSB)

Differential Linearity Error (1/2 LSB)

1 LSB

0 ... 000 0 1 2 3 4 5 Analog Input Value (LSB)

A.

1 LSB = (ADREFHI ADREFLO)/210

Figure 5-20. Differential Non-linearity (DNL) The integral non-linearity error shown in Figure 5-21 (sometimes referred to as linearity error) is the deviation of the values on the actual transfer function from a straight line.
0 ... 111 0 ... 110 0 ... 101 0 ... 100 0 ... 011 0 ... 010 0 ... 001 Ideal Transition Actual Transition

Digital Output Code

At Transition 011/100 (-1/2 LSB)

End-Point Lin. Error At Transition 001/010 (-1/4 LSB) 0 1 2 3 4 5 Analog Input Value (LSB) 6 7

0 ... 000

A.

1 LSB = (ADREFHI ADREFLO)/210

Figure 5-21. Integral Non-linearity (INL) Error The absolute accuracy or total error of an MibADC as shown in Figure 5-22 is the maximum value of the difference between an analog value and the ideal midstep value.

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0 ... 111 0 ... 110 0 ... 101 0 ... 100 0 ... 011 0 ... 010 0 ... 001 Total Error at Step 0 ... 001 (1/2 LSB)

Digital Output Code

Total Error At Step 0 ... 101 (-1 1/4 LSB)

0 ... 000 0 1 2 3 4 5 Analog Input Value (LSB) 6 7

A.

1 LSB = (ADREFHI ADREFLO)/210

Figure 5-22. Absolute Accuracy (Total) Error

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6 Revision History
This data sheet revision history highlights the technical changes made to the device or the datasheet.
Date August 2011 December 2011 Additions, Deletions, And Modifications Added descriptions for the ENZ pin. Corrected number of GIO pins available from 8 to 4 in Device Characteristics table Updated LBIST section to include support for STCCLK = HCLK Added additional detail about MBIST cycle counts Operating Conditions and electrical specs upated with characterized values Added upper limit to Vreg ramp specification Removed support for low power modes Added TEST Pin Glitch Filter Timing specification Added note about back to back write/erase cycling in the EEPROM emulation bank. Added FMPLL validated settings table January 2012 Updated programming times in the Flash Timings table. Corrected programming word size from 16-bit to 32-bit in the Flash Timings table to accurately reflect the default FSM configuration. Added assumed use case and qualification standards for EEPROM emulation use in an application in the Flash Timings table. C B Revision A

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Revision History

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7 Mechanical Data
7.1 Thermal Data
Table 7-1 shows the thermal resistance characteristics for the PQFP - PZ mechanical packages. Table 7-1. Thermal Resistance Characteristics (S-PQFP Package) [PZ]
PARAMETER RJA RJC C/W 48 5

7.2

Packaging Information
The following packaging information reflects the most current released data available for the designated device(s). This data is subject to change without notice and without revision of this document.

64

Mechanical Data

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PACKAGE OPTION ADDENDUM

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2-Mar-2012

PACKAGING INFORMATION
Orderable Device S4MF03107SPZQQ1 S4MF04207SPZQQ1 Status
(1)

Package Type Package Drawing LQFP LQFP PZ PZ

Pins 100 100

Package Qty 90 90

Eco Plan

(2)

Lead/ Ball Finish

MSL Peak Temp

(3)

Samples (Requires Login)

ACTIVE ACTIVE

Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br)

CU NIPDAU Level-3-260C-168 HR CU NIPDAU Level-3-260C-168 HR

(1)

The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device.
(2)

Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)

MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

Addendum-Page 1

MECHANICAL DATA
MTQF013A OCTOBER 1994 REVISED DECEMBER 1996

PZ (S-PQFP-G100)

PLASTIC QUAD FLATPACK

0,50 75 51

0,27 0,17

0,08 M

76

50

100

26

0,13 NOM

1 12,00 TYP 14,20 SQ 13,80 16,20 SQ 15,80 1,45 1,35

25 Gage Plane

0,05 MIN

0,25 0 7

0,75 0,45 Seating Plane

1,60 MAX

0,08

4040149 /B 11/96 NOTES: A. All linear dimensions are in millimeters. B. This drawing is subject to change without notice. C. Falls within JEDEC MS-026

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