PROFET BTS621L1

Smart Two Channel Highside Power Switch

Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection (including load dump) Fast demagnetization of inductive loads Reverse battery protection1) Undervoltage and overvoltage shutdown with auto-restart and hysteresis Open drain diagnostic output Open load detection in ON-state CMOS compatible input Loss of ground and loss of Vbb protection Electrostatic discharge (ESD) protection

Features

Product Summary Overvoltage protection Operating voltage

Vbb(AZ) Vbb(on)

43 5.0 ... 34
both

V V

channels: On-state resistance RON Load current (ISO) IL(ISO) Current limitation IL(SCr)

each parallel 100 50 m 4.4 8.5 A 8 8 A

TO-220AB/7

Application

Standard C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads All types of resistive, inductive and capacitve loads Replaces electromechanical relays, fuses and discrete circuits

Straight leads

SMD

General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.

Voltage source V
Logic

Overvoltage protection

Current limit 1

Gate 1 protection

+ V bb

Voltage sensor

Level shifter Rectifier 1 Charge pump 1 Charge pump 2

Limit for unclamped ind. loads 1 Open load Short to Vbb detection 1 Current limit 2 Gate 2 protection

OUT1

3 6 5

IN1 IN2

Temperature sensor 1

ESD
ST

Logic

Level shifter Rectifier 2

Limit for unclamped ind. loads 2 Open load Short to Vbb detection 2

OUT2

Temperature sensor 2
R O1 GND R O2

Load

PROFET 2

GND Signal GND

Load GND

1)

With external current limit (e.g. resistor RGND=150 ) in GND connection, resistor in series with ST connection, reverse load current limited by connected load.

Semiconductor Group

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PROFET BTS621L1
Pin 1 2 3 4 5 6 7 Symbol OUT1 (Load, L) GND IN1 Vbb ST IN2 OUT2 (Load, L) Function Output 1, protected high-side power output of channel 1 Logic ground Input 1, activates channel 1 in case of logical high signal Positive power supply voltage, the tab is shorted to this pin Diagnostic feedback: open drain, low on failure Input 2, activates channel 2 in case of logical high signal Output 2, protected high-side power output of channel 2

Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection Tj Start=-40 ...+150C Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V RI3)= 2 , RL= 2.7 , td= 200 ms, IN= low or high Load current (Short circuit current, see page 5) Operating temperature range Storage temperature range Power dissipation (DC), TC 25 C Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150C, TC = 150C const. one channel, IL = 4.4 A, ZL = 32 mH, 0 : both channels parallel, IL = 8.5 A, ZL = 17 mH, 0 :
see diagrams on page 9

Symbol Vbb Vbb VLoad dump4) IL Tj Tstg Ptot EAS

Values 43 34 60 self-limited -40 ...+150 -55 ...+150 75 395 790 1.0 2.0 -10 ... +16 2.0 5.0

Unit V V V A C W mJ

Electrostatic discharge capability (ESD) (Human Body Model) Input voltage (DC) Current through input pin (DC) Current through status pin (DC)
see internal circuit diagrams page 7

IN: VESD all other pins: VIN IIN IST

kV V mA

acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993

2)

3) 4)

Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a 150 resistor in the GND connection and a 15 k resistor in series with the status pin. A resistor for the protection of the input is integrated. RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

Semiconductor Group

2003-Oct-01

PROFET BTS621L1 Thermal Characteristics

Parameter and Conditions Thermal resistance Symbol chip - case, both channels: RthJC each channel: junction - ambient (free air): RthJA SMD version, device on PCB5): min ---Values typ max -1.7 -3.4 -75 35 Unit K/W

Electrical Characteristics
Parameter and Conditions, each channel
at Tj = 25 C, Vbb = 12 V unless otherwise specified

Symbol

Values min typ max

Unit

Load Switching Capabilities and Characteristics On-state resistance (pin 4 to 1 or 7) IL = 2 A Tj=25 C: RON each channel Tj=150 C: Nominal load current, ISO Norm (pin 4 to 1 or 7) VON = 0.5 V, TC = 85 C each channel: IL(ISO) both channels parallel: Output current (pin 1 or 7) while GND disconnected or GND pulled up, Vbb=30 V, VIN= 0, see diagram page 8 Turn-on time IN to 90% VOUT: Turn-off time IN to 10% VOUT: RL = 12 , Tj =-40...+150C Slew rate on 10 to 30% VOUT, RL = 12 , Tj =-40...+150C Slew rate off 70 to 40% VOUT, RL = 12 , Tj =-40...+150C IL(GNDhigh) ton toff dV /dton -dV/dtoff -3.5 6.8 -80 80 0.1 0.1 80 160 4.4 8.5 -200 200 --100 200 --10 400 400 1 1 m

A mA s

V/s V/s

5)

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air.

Semiconductor Group

2003-Oct-01

PROFET BTS621L1
Parameter and Conditions, each channel
at Tj = 25 C, Vbb = 12 V unless otherwise specified

Symbol

Values min typ max

Unit

Operating Parameters Operating voltage6) Undervoltage shutdown Undervoltage restart

Tj =-40...+150C: Tj =-40...+150C: Tj =-40...+25C: Tj =+150C: Undervoltage restart of charge pump see diagram page 13 Tj =-40...+150C: Undervoltage hysteresis Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150C: Overvoltage restart Tj =-40...+150C: Overvoltage hysteresis Tj =-40...+150C: Overvoltage protection7) Tj =-40...+150C: Ibb=40 mA Standby current (pin 4) VIN=0 Tj=-40...+25C: Tj= 150C: Leakage output current (included in Ibb(off)) VIN=0 Operating current (Pin 2)8), VIN=5 V both channels on, Tj =-40...+150C Operating current (Pin 2)8) one channel on, Tj =-40...+150C:

Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp) Vbb(under) Vbb(over) Vbb(o rst) Vbb(over) Vbb(AZ)

5.0 3.5 ---34 33 -42

---5.6 0.2 --0.5 47

34 5.0 5.0 7.0 7.0 -43 ----

V V V V V V V V V

Ibb(off) IL(off) IGND IGND

------

14 17 -4 2

30 35 12 6 3

A A mA mA

6) 7) 8)

At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT Vbb - 2 V See also VON(CL) in table of protection functions and circuit diagram page 8. Add IST, if IST > 0, add IIN, if VIN>5.5 V

Semiconductor Group

2003-Oct-01

PROFET BTS621L1
Parameter and Conditions, each channel
at Tj = 25 C, Vbb = 12 V unless otherwise specified

Symbol

Values min typ max

Unit

Protection Functions9) Initial peak short circuit current limit (pin 4 to 1 or 7) Tj =-40C: Tj =25C: Tj =+150C: Repetitive short circuit shutdown current limit Tj = Tjt (see timing diagrams, page 11) Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 40 mA, Tj =-40..+150C: Thermal overload trip temperature Thermal hysteresis Reverse battery (pin 4 to 2) 10) Reverse battery voltage drop (Vout > Vbb) IL = -2.9 A, each channel Tj=150 C: Diagnostic Characteristics Open load detection current
(on-condition)

IL(SCp) 11 9 5 IL(SCr) -VON(CL) Tjt Tjt -Vbb -VON(rev) 41 150 ---8 47 -10 -610 -53 --32 -A V C K V mV 18 14 8 25 22 14 A

Tj=-40 C: IL (OL) Tj=25 ..150C:

20 20 2 4

--3 10

400 300 4 30

mA V k

Open load detection voltage11) (off-condition) VOUT(OL) Tj=-40..150C: Internal output pull down (pin 1 or 7 to 2), VOUT=5 V, Tj=-40..150C RO

9)

Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 10) Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 8). 11) External pull up resistor required for open load detection in off state.

Semiconductor Group

2003-Oct-01

PROFET BTS621L1
Parameter and Conditions, each channel
at Tj = 25 C, Vbb = 12 V unless otherwise specified

Symbol

Values min typ max 2.5 1.7 1.5 -1 20 100 --3.5 --0.5 -50 320 5 200 6 3.5 --50 90 800 20 600

Unit

Input and Status Feedback12) Input resistance Tj=-40..150C, see circuit page 7 Input turn-on threshold voltage Tj =-40..+150C: Input turn-off threshold voltage Tj =-40..+150C: Input threshold hysteresis Off state input current (pin 3 or 6), VIN = 0.4 V, Tj =-40..+150C On state input current (pin 3 or 6), VIN = 3.5 V, Tj =-40..+150C Delay time for status with open load after switch off (other channel in off state) (see timing diagrams, page 12), Tj =-40..+150C Delay time for status with open load after switch off (other channel in on state) (see timing diagrams, page 12), Tj =-40..+150C Status invalid after positive input slope (open load) Tj=-40 ... +150C: Status output (open drain) Zener limit voltage Tj =-40...+150C, IST = +1.6 mA: ST low voltage Tj =-40...+25C, IST = +1.6 mA: Tj = +150C, IST = +1.6 mA:

RI VIN(T+) VIN(T-) VIN(T) IIN(off) IIN(on) td(ST OL4) td(ST OL5) td(ST)

k V V V A A s s s

VST(high) VST(low)

5.4 ---

6.1 ---

-0.4 0.6

12)

If a ground resistor RGND is used, add the voltage drop across this resistor.

Semiconductor Group

2003-Oct-01

PROFET BTS621L1 Truth Table

IN1 Normal operation L L H H L L H L H X L L H L H X L X H L H X X X IN2 L H L H L H X L L H L H X L L H L H X X X L H X OUT1 L L H H Z Z H L H X H H H L H X L L L L L X X L OUT2 L H L H L H X Z Z H L H X H H H L L L X X L L L ST BTS621L1 H H H H H(L13)) H L H(L13)) H L 14 L ) H H(L15)) L14) H H(L15)) H L L H L H L H

Open load

Channel 1

Channel 2

Short circuit to Vbb

Channel 1

Channel 2

Overtemperature

both channel

Channel 1 Channel 2 Undervoltage/ Overvoltage

L = "Low" Level H = "High" Level

X = don't care Z = high impedance, potential depends on external circuit Status signal after the time delay shown in the diagrams (see fig 5. page 12...13)

Terms
V Ibb V ON1 VON2 OUT1 6 IN2 PROFET OUT2 GND 2 R GND I GND 7 V OUT1 VOUT2 1 I L1 I L2

Input circuit (ESD protection)

R IN
4 3 IN1

bb

I IN1 I IN2

Vbb

ESD-ZD I GND

I ST ST V V IN1 IN2 V 5 ST

ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).

13) 14)

With additional external pull up resistor An external short of output to Vbb, in the off state, causes an internal current from output to ground. If RGND is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious. 15) Low resistance to V may be detected in the ON-state by the no-load-detection bb

Semiconductor Group

2003-Oct-01

PROFET BTS621L1
Status output
+5V

Open-load detection
ON-state diagnostic condition: VON < RON * IL(OL); IN high
+ V bb

R ST(ON)

ST

GND

ESDZD

ON

VON

ESD-Zener diode: 6.1 V typ., max 5 mA; RST(ON) < 380 at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).

OUT

Logic unit

Open load detection

Inductive and overvoltage output clamp

+ V bb V Z

OFF-state diagnostic condition: VOUT > 3 V typ.; IN low

EXT

VON

OFF
OUT GND

OUT

PROFET
Logic unit Open load detection
R O

VON clamped to 47 V typ.

Signal GND

Overvolt. and reverse batt. protection

+ V bb

GND disconnect
V bb 3 IN1 IN2 ST 4 Ibb

IN1 IN2

RI Logic

Z2

Vbb OUT1 PROFET OUT2 GND 2 V GND

R ST

ST V

Z1 GND

6 5 V V V IN1 IN2 ST

R GND
Signal GND

VZ1 = 6.1 V typ., VZ2 = 47 V typ., RI= 3.5 k typ, RGND= 150

Any kind of load. In case of Input=high is VOUT VIN - VIN(T+) . Due to VGND >0, no VST = low signal available.

Semiconductor Group

2003-Oct-01

PROFET BTS621L1
GND disconnect with GND pull up
4 3 V IN1 6 V IN2 5 IN2 ST IN1 Vbb OUT1 PROFET OUT2 GND 2 V 1

Inductive Load switch-off energy dissipation

E bb E AS Vbb PROFET OUT EL ELoad

IN
7

=
GND

ST GND ZL

V bb

ST

L RL

ER

Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available.

Vbb disconnect with energized inductive load

4 3 high 6 5 IN2 ST PROFET OUT2 GND 2 7 IN1 Vbb OUT1 1

Energy stored in load inductance: EL = 1/2LI L While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= VON(CL)iL(t) dt, with an approximate solution for RL > 0 : IL L ILRL ) EAS= 2R (Vbb + |VOUT(CL)|) ln (1+ |V L OUT(CL)|
2

Maximum allowable load inductance for a single switch off (both channels parallel)
L = f (IL ); Tj,start = 150C,TC = 150C const., Vbb = 12 V, RL = 0 L [mH]
10000

bb

Normal load current can be handled by the PROFET itself.

Vbb disconnect with charged external inductive load

4 3 high 6 5 IN2 ST PROFET OUT2 GND 2 7 IN1 Vbb OUT1 1 D

1000

100

bb

10

If other external inductive loads L are connected to the PROFET, additional elements like D are necessary.

1 3 5 7 9 11

IL [A]

Semiconductor Group

2003-Oct-01

PROFET BTS621L1
Typ. transient thermal impedance chip case ZthJC = f(tp), one Channel active ZthJC [K/W]
10

0.1

D= 0.5 0.2 0.1 0.05 0.02 0.01 0

0.01 1E-5

1E-4

1E-3

1E-2

1E-1

1E0

1E1

tp [s] Typ. transient thermal impedance chip case ZthJC = f(tp), both Channel active ZthJC [K/W]
1

0.1 D= 0.5 0.2 0.1 0.05 0.02 0.01 0 0.01 1E-5

1E-4

1E-3

1E-2

1E-1

1E0

1E1

tp [s]

Semiconductor Group

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PROFET BTS621L1

Timing diagrams
Figure 1a: Vbb turn on:
IN1 IN2

Both channels are symmetric and consequently the diagrams are valid for each channel as well as for permuted channels
Figure 2b: Switching an inductive load

IN

V bb ST V
OUT1 *)

d(ST)

OUT

OUT2

ST open drain t

IL I L(OL) t
*) if the time constant of load is too large, open-load-status may occur

Figure 2a: Switching a lamp:

IN

Figure 3a: Short circuit shut down by overtempertature, reset by cooling

other channel: normal operation

IN ST

OUT

IL I L(SCp)

IL(SCr)

t ST t

Heating up may require several milliseconds, depending on external conditions

Semiconductor Group

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PROFET BTS621L1
Figure 4a: Overtemperature: Reset if Tj <Tjt Figure 5b: Open load: detection in ON-state, turn on/off to open load
IN1 IN IN2 ST V
OUT1

channel 2: normal operation

OUT

L1

channel 1: open load T

J

t ST

d(ST)

d(ST OL4)

d(ST)

d(ST OL5)

Figure 5a: Open load: detection in ON-state, open load occurs in on-state
IN1

Figure 5c: Open load: detection in ON- and OFF-state (with REXT), turn on/off to open load
IN1

IN2

channel 2: normal operation

IN2

channel 2: normal operation

VOUT1

OUT1

IL1

channel 1: open load

normal load

open load t d(ST OL1)

I L1

channel 1: open load

t d(ST OL1) t d(ST OL2) ST

t d(ST OL2) t

ST

t d(ST)

d(ST)

t d(ST OL5) t

td(ST OL1) = 30 s typ., td(ST OL2) = 20 s typ

td(ST OL5) depends on external circuitry because of high impedance

Semiconductor Group

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PROFET BTS621L1
Figure 6a: Undervoltage: Figure 7a: Overvoltage:

IN

IN

bb V
bb(under)

Vbb Vbb(u cp) V

bb(u rst)

V ON(CL)

Vbb(over)

V bb(o rst)

V OUT

OUT

ST open drain t

ST

Figure 6b: Undervoltage restart of charge pump

V on VON(CL)

off-state

on-state

bb(over)

bb(u rst)

bb(o rst)

V V
bb(under)

bb(u cp)

charge pump starts at Vbb(ucp) =5.6 V typ.

Semiconductor Group

off-state
V bb

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2003-Oct-01

PROFET BTS621L1

Package and Ordering Code

All dimensions in mm

Standard TO-220AB/7
BTS621L1

Ordering code Q67060-S6304-A2

SMD TO 220AB/7, Opt. E3128 Ordering code

BTS621L1 E3128A T&R: Q67060-S6304-A4

TO 220AB/7, Opt. E3230

BTS621L1 E3230

Ordering code Q67060-S6304-A3

Changed since 04.96 Date Change Dec td(ST OL4) max reduced from 1500 1996 to 800s, typical from 400 to 320s, min limit unchanged EAS maximum rating and diagram added Zth specification added max Output leakage current IL(off) reduced from 20 to 12 A increased ESD capability Typ. reverse battery voltage drop VON(rev) added

Semiconductor Group

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PROFET BTS621L1
Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 Mnchen Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Semiconductor Group

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